CA868641A - Method for etching silicon nitride films with sharp edge definition - Google Patents

Method for etching silicon nitride films with sharp edge definition

Info

Publication number
CA868641A
CA868641A CA868641A CA868641DA CA868641A CA 868641 A CA868641 A CA 868641A CA 868641 A CA868641 A CA 868641A CA 868641D A CA868641D A CA 868641DA CA 868641 A CA868641 A CA 868641A
Authority
CA
Canada
Prior art keywords
silicon nitride
sharp edge
nitride films
etching silicon
edge definition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA868641A
Inventor
L. Cuomo Jerome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Publication date
Application granted granted Critical
Publication of CA868641A publication Critical patent/CA868641A/en
Expired legal-status Critical Current

Links

CA868641A Method for etching silicon nitride films with sharp edge definition Expired CA868641A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA868641T

Publications (1)

Publication Number Publication Date
CA868641A true CA868641A (en) 1971-04-13

Family

ID=36354731

Family Applications (1)

Application Number Title Priority Date Filing Date
CA868641A Expired CA868641A (en) Method for etching silicon nitride films with sharp edge definition

Country Status (1)

Country Link
CA (1) CA868641A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105185707A (en) * 2009-12-04 2015-12-23 诺发系统有限公司 Hardmask Materials, Forming Method And Device, And Applications Thereof
US9837270B1 (en) 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
US10472714B2 (en) 2013-05-31 2019-11-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US11049716B2 (en) 2015-04-21 2021-06-29 Lam Research Corporation Gap fill using carbon-based films
US11264234B2 (en) 2012-06-12 2022-03-01 Novellus Systems, Inc. Conformal deposition of silicon carbide films

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105185707A (en) * 2009-12-04 2015-12-23 诺发系统有限公司 Hardmask Materials, Forming Method And Device, And Applications Thereof
CN105185707B (en) * 2009-12-04 2018-06-01 诺发系统有限公司 Hard mask material, its forming method and equipment and application thereof
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US11264234B2 (en) 2012-06-12 2022-03-01 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
US10472714B2 (en) 2013-05-31 2019-11-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US11049716B2 (en) 2015-04-21 2021-06-29 Lam Research Corporation Gap fill using carbon-based films
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US10580690B2 (en) 2016-11-23 2020-03-03 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US9837270B1 (en) 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment

Similar Documents

Publication Publication Date Title
AU2341470A (en) Process for producing nitride films
CA986793A (en) Method for forming an insulating film on a grain oriented silicon steel sheet
CA968259A (en) Iii-v compound on insulating substrate
CA925629A (en) Doping epitaxial films by the molecular beam method
CA938776A (en) Method of manufacturing silicon nitride products
CA990036A (en) Thin film process
CA976065A (en) Aluminum etching process
CA918308A (en) Method and device for the deposition of doped semiconductors
CA868641A (en) Method for etching silicon nitride films with sharp edge definition
CA927776A (en) Method for preparing thin unsupported films of silicon nitride
CA955832A (en) Method of forming semiconductor device with smooth flat surface
CA958313A (en) Etching si3n4
CA918046A (en) Method for chemically etching surfaces
CA954736A (en) Photo etching method and apparatus
CA988817A (en) Etching of group iii-v semiconductors
CA941140A (en) Method of manufacturing silicon nitride products
AU4513372A (en) Method forthe manufacturing ofa semiconductor device
AU458218B2 (en) A METHOD OF MANUFACTURING SILICON nitride products
CA863899A (en) Process for etching silicon nitride
CA888665A (en) Method of preparing silicon nitride films
CA853898A (en) Growth of silicon nitride thin films
CA888662A (en) Pin-hole free silicon nitride films and process therefor
CA882946A (en) Method for manufacturing semiconductor device
CA887612A (en) Semiconductor device etching process and etching composition
CA879058A (en) Etching