CA550351A - Method of producing p-n crystals of germanium silicon, or other semiconductors - Google Patents

Method of producing p-n crystals of germanium silicon, or other semiconductors

Info

Publication number
CA550351A
CA550351A CA550351A CA550351DA CA550351A CA 550351 A CA550351 A CA 550351A CA 550351 A CA550351 A CA 550351A CA 550351D A CA550351D A CA 550351DA CA 550351 A CA550351 A CA 550351A
Authority
CA
Canada
Prior art keywords
semiconductors
crystals
producing
germanium silicon
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA550351A
Other languages
French (fr)
Inventor
O. Seiler Karl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Publication date
Application granted granted Critical
Publication of CA550351A publication Critical patent/CA550351A/en
Expired legal-status Critical Current

Links

CA550351A Method of producing p-n crystals of germanium silicon, or other semiconductors Expired CA550351A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA550351T

Publications (1)

Publication Number Publication Date
CA550351A true CA550351A (en) 1957-12-17

Family

ID=35711738

Family Applications (1)

Application Number Title Priority Date Filing Date
CA550351A Expired CA550351A (en) Method of producing p-n crystals of germanium silicon, or other semiconductors

Country Status (1)

Country Link
CA (1) CA550351A (en)

Similar Documents

Publication Publication Date Title
CA550351A (en) Method of producing p-n crystals of germanium silicon, or other semiconductors
CA546346A (en) Methods of producing silicon of high purity
CA592456A (en) Process for the production of crystalline silicon carbide
CA608082A (en) Method for producing hyperpure silicon
CA544842A (en) Process for the preparation of silicon tetrafluoride
CA547565A (en) Method of making p-n junction semiconductor units
AU227959B2 (en) Improvements in or relating to methods and apparatus forthe manufacture of single crystals froma substance, for example a semiconductor, such as germanium or silicon
CA556628A (en) Method of producing pure silicon
CA545567A (en) Silicon semiconductor devices
CA550684A (en) Method of growing semi-conductors
AU229067B2 (en) Process for the production of silicon
AU209302B2 (en) Method of preparing silicon
AU248705B2 (en) Process for producing selectively doped semiconductor dendritic crystals
AU3325157A (en) Improvements in or relating to methods and apparatus forthe manufacture of single crystals froma substance, for example a semiconductor, such as germanium or silicon
AU249276B2 (en) Method for producing semiconductor compounds ofthe groups iiia-va elements
CA608337A (en) Process for producing semiconductor devices
CA565419A (en) Method of manufacturing semi-conductor crystals
CA593970A (en) Process for the production of extremely pure silicon
CA596223A (en) Process for the production of silicon
CA530880A (en) Method of fabricating semiconductive devices
AU236258B2 (en) Method of producing pure silicon for electric semiconductor devices
AU3367357A (en) Process for the production of silicon
AU1856156A (en) Method of fabricating semiconductive devices. V
AU225605B2 (en) Method of producing high purity silicon tetrachloride
AU1845256A (en) Method of preparing silicon