CA2208370C - Diode laser dotee d'une region a implantation d'ions - Google Patents

Diode laser dotee d'une region a implantation d'ions Download PDF

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Publication number
CA2208370C
CA2208370C CA002208370A CA2208370A CA2208370C CA 2208370 C CA2208370 C CA 2208370C CA 002208370 A CA002208370 A CA 002208370A CA 2208370 A CA2208370 A CA 2208370A CA 2208370 C CA2208370 C CA 2208370C
Authority
CA
Canada
Prior art keywords
region
ions
cladding layer
lateral side
modified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002208370A
Other languages
English (en)
Other versions
CA2208370A1 (fr
Inventor
Dana M. Beyea
Todd Martin Dixon
Edward M. Clausen, Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YAMA CAPITAL LLC
Original Assignee
Polaroid Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Polaroid Corp filed Critical Polaroid Corp
Publication of CA2208370A1 publication Critical patent/CA2208370A1/fr
Application granted granted Critical
Publication of CA2208370C publication Critical patent/CA2208370C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un dispositif laser et son procédé de fabrication. Ce dispositif comprend une ou plusieurs régions d'implantation d'ions (37, 39) comme moyen pour diminuer les risques de défaillances attribuables aux défauts du type raies sombres. Les régions d'implantation d'ions qui sont formées entre la cavité de gain du laser et les régions d'origine probable des défauts du type raies sombres servent à modifier les propriétés électriques, optiques et mécaniques de la structure de réseau du dispositif, et à diminuer ou éliminer la propagation de défauts du type raies sombres provoquées par des défauts de constitution ou des imperfections éventuellement présentes dans la masse du matériau du dispositif.
CA002208370A 1994-12-22 1995-12-22 Diode laser dotee d'une region a implantation d'ions Expired - Fee Related CA2208370C (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36129594A 1994-12-22 1994-12-22
US08/361,295 1994-12-22
PCT/US1995/016819 WO1996019856A1 (fr) 1994-12-22 1995-12-22 Diode laser dotee d'une region a implantation d'ions

Publications (2)

Publication Number Publication Date
CA2208370A1 CA2208370A1 (fr) 1996-06-27
CA2208370C true CA2208370C (fr) 2005-07-05

Family

ID=23421467

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002208370A Expired - Fee Related CA2208370C (fr) 1994-12-22 1995-12-22 Diode laser dotee d'une region a implantation d'ions

Country Status (7)

Country Link
US (1) US5804461A (fr)
EP (1) EP0799512B1 (fr)
JP (1) JPH10510100A (fr)
AT (1) ATE201941T1 (fr)
CA (1) CA2208370C (fr)
DE (1) DE69521216T2 (fr)
WO (1) WO1996019856A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11025031B2 (en) 2016-11-29 2021-06-01 Leonardo Electronics Us Inc. Dual junction fiber-coupled laser diode and related methods
US11056854B2 (en) 2018-08-14 2021-07-06 Leonardo Electronics Us Inc. Laser assembly and related methods
US11296481B2 (en) 2019-01-09 2022-04-05 Leonardo Electronics Us Inc. Divergence reshaping array
US11406004B2 (en) 2018-08-13 2022-08-02 Leonardo Electronics Us Inc. Use of metal-core printed circuit board (PCB) for generation of ultra-narrow, high-current pulse driver
US11752571B1 (en) 2019-06-07 2023-09-12 Leonardo Electronics Us Inc. Coherent beam coupler

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE509809C2 (sv) * 1995-11-03 1999-03-08 Mitel Semiconductor Ab Lysdiod med uppdelat ljusemitterande område
US6055258A (en) * 1995-11-22 2000-04-25 Polaroid Corporation Laser diode with an ion-implanted region
JP2967743B2 (ja) * 1997-01-14 1999-10-25 日本電気株式会社 ｎ型窒化ガリウム系半導体のコンタクト電極及びその形成方法
JP3181262B2 (ja) * 1998-06-04 2001-07-03 スタンレー電気株式会社 平面実装型ｌｅｄ素子およびその製造方法
GB2341454B (en) * 1998-09-14 2003-01-29 Univ Southampton Optical waveguide and method of fabricating the same
JP2003515250A (ja) * 1999-11-12 2003-04-22 プリンストン・ライトウェーブ・インコーポレイテッド 半導体レーザダイオードの電流拡散制御
US7079716B2 (en) * 2003-06-26 2006-07-18 Bae Systems Information And Electronic Systems Integration Inc. Integrated photonic circuits with vertical connections
DE102017126446A1 (de) * 2017-11-10 2019-05-16 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791929A (fr) * 1971-12-02 1973-03-16 Western Electric Co Procede de fabrication de regions isolantes dans un corps de semi-conducteur
JPS61236184A (ja) * 1985-04-12 1986-10-21 Agency Of Ind Science & Technol 半導体レ−ザ素子の製造方法
US5305412A (en) * 1992-12-14 1994-04-19 Xerox Corporation Semiconductor diode optical switching arrays utilizing low-loss, passive waveguides

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11025031B2 (en) 2016-11-29 2021-06-01 Leonardo Electronics Us Inc. Dual junction fiber-coupled laser diode and related methods
US11705690B2 (en) 2016-11-29 2023-07-18 Leonardo Electronics Us Inc. Dual junction fiber-coupled laser diode and related methods
US11406004B2 (en) 2018-08-13 2022-08-02 Leonardo Electronics Us Inc. Use of metal-core printed circuit board (PCB) for generation of ultra-narrow, high-current pulse driver
US11056854B2 (en) 2018-08-14 2021-07-06 Leonardo Electronics Us Inc. Laser assembly and related methods
US11296481B2 (en) 2019-01-09 2022-04-05 Leonardo Electronics Us Inc. Divergence reshaping array
US11752571B1 (en) 2019-06-07 2023-09-12 Leonardo Electronics Us Inc. Coherent beam coupler

Also Published As

Publication number Publication date
DE69521216D1 (de) 2001-07-12
CA2208370A1 (fr) 1996-06-27
WO1996019856A1 (fr) 1996-06-27
JPH10510100A (ja) 1998-09-29
DE69521216T2 (de) 2001-09-20
ATE201941T1 (de) 2001-06-15
US5804461A (en) 1998-09-08
EP0799512A1 (fr) 1997-10-08
EP0799512B1 (fr) 2001-06-06

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