BR7401204D0 - Aperfeicoamento em dispositivo semicondutor de circuito integrado - Google Patents

Aperfeicoamento em dispositivo semicondutor de circuito integrado

Info

Publication number
BR7401204D0
BR7401204D0 BR1204/74A BR120474A BR7401204D0 BR 7401204 D0 BR7401204 D0 BR 7401204D0 BR 1204/74 A BR1204/74 A BR 1204/74A BR 120474 A BR120474 A BR 120474A BR 7401204 D0 BR7401204 D0 BR 7401204D0
Authority
BR
Brazil
Prior art keywords
improvement
semiconductor device
integrated circuit
circuit semiconductor
integrated
Prior art date
Application number
BR1204/74A
Other languages
English (en)
Inventor
M Polinski
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BR7401204D0 publication Critical patent/BR7401204D0/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
BR1204/74A 1973-02-21 1974-02-19 Aperfeicoamento em dispositivo semicondutor de circuito integrado BR7401204D0 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/334,431 US3961358A (en) 1973-02-21 1973-02-21 Leakage current prevention in semiconductor integrated circuit devices

Publications (1)

Publication Number Publication Date
BR7401204D0 true BR7401204D0 (pt) 1974-11-05

Family

ID=23307191

Family Applications (1)

Application Number Title Priority Date Filing Date
BR1204/74A BR7401204D0 (pt) 1973-02-21 1974-02-19 Aperfeicoamento em dispositivo semicondutor de circuito integrado

Country Status (9)

Country Link
US (1) US3961358A (pt)
JP (1) JPS5212553B2 (pt)
BR (1) BR7401204D0 (pt)
DE (1) DE2406807B2 (pt)
FR (1) FR2218658B1 (pt)
GB (1) GB1426683A (pt)
IT (1) IT1006928B (pt)
NL (1) NL7401933A (pt)
YU (1) YU36241B (pt)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53161649U (pt) * 1977-05-23 1978-12-18
IT1085486B (it) * 1977-05-30 1985-05-28 Ates Componenti Elettron Struttura a semiconduttore integrata monolitica con giunzioni planari schermate da campi elettrostatici esterni
JPS5852347B2 (ja) * 1980-02-04 1983-11-22 株式会社日立製作所 高耐圧半導体装置
JPS5753944A (en) * 1980-09-17 1982-03-31 Hitachi Ltd Semiconductor integrated circuit
DE3137914A1 (de) * 1981-09-23 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Anordnung zur kompensation von korrosionseffekten inintegrierten halbleiterschaltkreisen
DE3141014A1 (de) * 1981-10-15 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung
JPS58197780A (ja) * 1982-05-14 1983-11-17 Hitachi Ltd 半導体圧力変換器
JPS60247940A (ja) * 1984-05-23 1985-12-07 Hitachi Ltd 半導体装置およびその製造方法
US4862232A (en) * 1986-09-22 1989-08-29 General Motors Corporation Transistor structure for high temperature logic circuits with insulation around source and drain regions
EP0341453B1 (de) * 1988-05-11 1993-08-25 Siemens Aktiengesellschaft MOS-Halbleiterbauelement für hohe Sperrspannung
US5293061A (en) * 1990-04-09 1994-03-08 Seiko Instruments Inc. Semiconductor device having an isolation layer region on the side wall of a groove
US6140665A (en) 1997-12-22 2000-10-31 Micron Technology, Inc. Integrated circuit probe pad metal level
JP2000031301A (ja) * 1998-07-13 2000-01-28 Mitsubishi Electric Corp 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA881182A (en) * 1971-09-14 L. J. Sangster Frederik Capacitor charge transferring device
US2491237A (en) * 1947-05-17 1949-12-13 Westinghouse Electric Corp Manufacture of miniature lamps
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
US3363152A (en) * 1964-01-24 1968-01-09 Westinghouse Electric Corp Semiconductor devices with low leakage current across junction
US3347430A (en) * 1964-05-25 1967-10-17 Melpar Inc Ring ohmic contact microelectronic component separation method
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device
JPS4417056Y1 (pt) 1966-04-15 1969-07-23
US3423606A (en) * 1966-07-21 1969-01-21 Gen Instrument Corp Diode with sharp reverse-bias breakdown characteristic
US3432731A (en) * 1966-10-31 1969-03-11 Fairchild Camera Instr Co Planar high voltage four layer structures
GB1202515A (en) * 1968-01-24 1970-08-19 Hitachi Ltd Semiconductor device
GB1276451A (en) * 1969-01-16 1972-06-01 Signetics Corp Semiconductor structure and method for lowering the collector resistance
FR2072112B1 (pt) * 1969-12-30 1973-12-07 Ibm
US3695855A (en) * 1970-01-08 1972-10-03 Ibm Doped electrical current-carrying conductive material
JPS4940394B1 (pt) * 1970-08-28 1974-11-01

Also Published As

Publication number Publication date
YU36241B (en) 1982-02-25
DE2406807B2 (de) 1980-08-14
NL7401933A (pt) 1974-08-23
FR2218658B1 (pt) 1977-09-16
JPS49115692A (pt) 1974-11-05
YU43474A (en) 1981-06-30
AU6563774A (en) 1975-08-21
JPS5212553B2 (pt) 1977-04-07
DE2406807A1 (de) 1974-08-22
US3961358A (en) 1976-06-01
IT1006928B (it) 1976-10-20
GB1426683A (en) 1976-03-03
FR2218658A1 (pt) 1974-09-13

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