AU2001283944A1 - Gas inlet mechanism for cvd-method and device - Google Patents

Gas inlet mechanism for cvd-method and device

Info

Publication number
AU2001283944A1
AU2001283944A1 AU2001283944A AU8394401A AU2001283944A1 AU 2001283944 A1 AU2001283944 A1 AU 2001283944A1 AU 2001283944 A AU2001283944 A AU 2001283944A AU 8394401 A AU8394401 A AU 8394401A AU 2001283944 A1 AU2001283944 A1 AU 2001283944A1
Authority
AU
Australia
Prior art keywords
cvd
gas inlet
inlet mechanism
gas
inlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001283944A
Inventor
Martin Dauelsberg
Johannes Kappeler
Gerd Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10064941A external-priority patent/DE10064941A1/en
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2001283944A1 publication Critical patent/AU2001283944A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2001283944A 2000-09-22 2001-07-14 Gas inlet mechanism for cvd-method and device Abandoned AU2001283944A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10061671 2000-09-22
DE10061671 2000-09-22
DE10064941A DE10064941A1 (en) 2000-09-22 2000-12-23 Gas inlet element
DE10064941 2000-12-23
PCT/EP2001/008139 WO2002024985A1 (en) 2000-09-22 2001-07-14 Gas inlet mechanism for cvd-method and device

Publications (1)

Publication Number Publication Date
AU2001283944A1 true AU2001283944A1 (en) 2002-04-02

Family

ID=26007933

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001283944A Abandoned AU2001283944A1 (en) 2000-09-22 2001-07-14 Gas inlet mechanism for cvd-method and device

Country Status (5)

Country Link
US (1) US7294207B2 (en)
EP (1) EP1322801B1 (en)
AU (1) AU2001283944A1 (en)
TW (1) TW555900B (en)
WO (1) WO2002024985A1 (en)

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AU2001283944A1 (en) * 2000-09-22 2002-04-02 Aixtron Ag Gas inlet mechanism for cvd-method and device
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DE102005011384A1 (en) * 2005-03-11 2006-09-14 Centrotherm Elektrische Anlagen Gmbh & Co. Kg Gas-tight connection element with bayonet lock
DE102005045582B3 (en) * 2005-09-23 2007-03-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Apparatus and method for continuous vapor deposition under atmospheric pressure and their use
DE102005056320A1 (en) 2005-11-25 2007-06-06 Aixtron Ag CVD reactor with a gas inlet member
US20070234956A1 (en) * 2006-04-05 2007-10-11 Dalton Jeremie J Method and apparatus for providing uniform gas delivery to a reactor
US7740706B2 (en) * 2006-11-28 2010-06-22 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
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US7758698B2 (en) * 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
JP2011500961A (en) * 2007-10-11 2011-01-06 バレンス プロセス イクウィップメント，インコーポレイテッド Chemical vapor deposition reactor
US8153536B2 (en) * 2007-11-20 2012-04-10 Soitec Transfer of high temperature wafers
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TWI473903B (en) 2013-02-23 2015-02-21 Hermes Epitek Corp Gas Injector and Cover Plate Assembly for Semiconductor Equipment
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US10407771B2 (en) * 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
US10403515B2 (en) * 2015-09-24 2019-09-03 Applied Materials, Inc. Loadlock integrated bevel etcher system
CN114164412B (en) * 2020-09-10 2024-03-08 鑫天虹(厦门)科技有限公司 Spray head structure of semiconductor atomic layer deposition device
CN112342529B (en) * 2020-09-24 2022-12-06 杭州盾源聚芯半导体科技有限公司 Injection pipe with connector
CN114105679B (en) * 2021-11-25 2023-05-16 西安鑫垚陶瓷复合材料有限公司 Chemical vapor infiltration diversion equipment and method for preparing ceramic composite pipe fitting by using same
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CN116791065B (en) * 2023-07-03 2024-06-14 拓荆科技(上海)有限公司 Diffusion member and semiconductor process equipment

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Also Published As

Publication number Publication date
WO2002024985A1 (en) 2002-03-28
EP1322801B1 (en) 2010-01-06
TW555900B (en) 2003-10-01
US7294207B2 (en) 2007-11-13
US20030177977A1 (en) 2003-09-25
EP1322801A1 (en) 2003-07-02

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