ATE370975T1 - Photoresistpolymerzusammensetzungen - Google Patents
PhotoresistpolymerzusammensetzungenInfo
- Publication number
- ATE370975T1 ATE370975T1 AT04756066T AT04756066T ATE370975T1 AT E370975 T1 ATE370975 T1 AT E370975T1 AT 04756066 T AT04756066 T AT 04756066T AT 04756066 T AT04756066 T AT 04756066T AT E370975 T1 ATE370975 T1 AT E370975T1
- Authority
- AT
- Austria
- Prior art keywords
- polymer compositions
- photoresist polymer
- polymerization
- heteroatom
- cleavage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/12—Esters of monohydric alcohols or phenols
- C08F20/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F20/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1812—C12-(meth)acrylate, e.g. lauryl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polymerisation Methods In General (AREA)
- Polymerization Catalysts (AREA)
- Supporting Of Heads In Record-Carrier Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48331003P | 2003-06-26 | 2003-06-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE370975T1 true ATE370975T1 (de) | 2007-09-15 |
Family
ID=33563916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04756066T ATE370975T1 (de) | 2003-06-26 | 2004-06-25 | Photoresistpolymerzusammensetzungen |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7510817B2 (de) |
| EP (1) | EP1641848B1 (de) |
| JP (1) | JP4725739B2 (de) |
| KR (1) | KR101057570B1 (de) |
| CN (1) | CN100549051C (de) |
| AT (1) | ATE370975T1 (de) |
| DE (1) | DE602004008468T2 (de) |
| TW (1) | TWI358609B (de) |
| WO (1) | WO2005003198A1 (de) |
Families Citing this family (64)
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|---|---|---|---|---|
| CN1732408B (zh) * | 2002-12-28 | 2010-04-21 | Jsr株式会社 | 辐射敏感性树脂组合物 |
| ATE370975T1 (de) | 2003-06-26 | 2007-09-15 | Jsr Corp | Photoresistpolymerzusammensetzungen |
| JP2007522262A (ja) * | 2003-06-26 | 2007-08-09 | シミックス・テクノロジーズ・インコーポレイテッド | フォトレジストポリマー |
| US7696292B2 (en) | 2003-09-22 | 2010-04-13 | Commonwealth Scientific And Industrial Research Organisation | Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography |
| US8741537B2 (en) | 2005-03-04 | 2014-06-03 | Fujifilm Corporation | Positive resist composition and pattern-forming method using the same |
| JP4961707B2 (ja) * | 2005-09-29 | 2012-06-27 | Ｊｓｒ株式会社 | 樹脂の合成法 |
| US7424818B2 (en) * | 2005-10-20 | 2008-09-16 | Boeing Company | Ultrasonic inspection reference standard for porous composite materials |
| US7694546B2 (en) * | 2005-11-17 | 2010-04-13 | The Boeing Company | Porosity reference standard utilizing one or more hollow, non-cylindrical shafts |
| US7752882B2 (en) | 2005-11-17 | 2010-07-13 | The Boeing Company | Porosity reference standard utilizing a mesh |
| US7762120B2 (en) * | 2005-12-01 | 2010-07-27 | The Boeing Company | Tapered ultrasonic reference standard |
| JP4881686B2 (ja) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4881687B2 (ja) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| US7770457B2 (en) * | 2006-10-13 | 2010-08-10 | The Boeing Company | Pseudo porosity reference standard for metallic interleaved composite laminates |
| US7617714B2 (en) * | 2006-12-06 | 2009-11-17 | The Boeing Company | Pseudo porosity reference standard for cored composite laminates |
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| JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
| US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| US8530148B2 (en) * | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| JP5162290B2 (ja) * | 2007-03-23 | 2013-03-13 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
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| EP1975716B1 (de) | 2007-03-28 | 2013-05-15 | Fujifilm Corporation | Positive Resistzusammensetzung und Verfahren zur Strukturformung |
| JP4621754B2 (ja) | 2007-03-28 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
| US8182975B2 (en) * | 2007-03-28 | 2012-05-22 | Fujifilm Corporation | Positive resist composition and pattern forming method using the same |
| US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
| EP2138898B1 (de) | 2007-04-13 | 2014-05-21 | FUJIFILM Corporation | Verfahren zur Strukturbildung und Verwendung einer Fotolackzusammensetzung in diesem Verfahren |
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| JP4982288B2 (ja) * | 2007-04-13 | 2012-07-25 | 富士フイルム株式会社 | パターン形成方法 |
| US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
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| US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
| JP4590431B2 (ja) | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
| KR101457927B1 (ko) | 2007-06-12 | 2014-11-07 | 후지필름 가부시키가이샤 | 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
| JP4617337B2 (ja) * | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
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| JP6175769B2 (ja) | 2011-05-30 | 2017-08-09 | 三菱ケミカル株式会社 | 重合体およびその製造方法 |
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| US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
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-
2004
- 2004-06-25 AT AT04756066T patent/ATE370975T1/de not_active IP Right Cessation
- 2004-06-25 KR KR1020057024783A patent/KR101057570B1/ko active IP Right Grant
- 2004-06-25 JP JP2006517641A patent/JP4725739B2/ja not_active Expired - Lifetime
- 2004-06-25 CN CNB2004800224609A patent/CN100549051C/zh not_active Expired - Fee Related
- 2004-06-25 TW TW093118645A patent/TWI358609B/zh not_active IP Right Cessation
- 2004-06-25 WO PCT/US2004/020351 patent/WO2005003198A1/en active IP Right Grant
- 2004-06-25 DE DE602004008468T patent/DE602004008468T2/de not_active Expired - Lifetime
- 2004-06-25 EP EP04756066A patent/EP1641848B1/de not_active Expired - Lifetime
-
2005
- 2005-12-12 US US11/300,657 patent/US7510817B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1845941A (zh) | 2006-10-11 |
| WO2005003198A1 (en) | 2005-01-13 |
| US20060257781A1 (en) | 2006-11-16 |
| JP4725739B2 (ja) | 2011-07-13 |
| DE602004008468D1 (en) | 2007-10-04 |
| JP2007526496A (ja) | 2007-09-13 |
| KR101057570B1 (ko) | 2011-08-17 |
| TWI358609B (en) | 2012-02-21 |
| TW200508795A (en) | 2005-03-01 |
| CN100549051C (zh) | 2009-10-14 |
| US7510817B2 (en) | 2009-03-31 |
| EP1641848A1 (de) | 2006-04-05 |
| KR20060088480A (ko) | 2006-08-04 |
| EP1641848B1 (de) | 2007-08-22 |
| DE602004008468T2 (de) | 2008-05-21 |
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