ATE340405T1 - Raumverwaltung in einem nichtflüchtigen speicher mit hoher kapazität - Google Patents
Raumverwaltung in einem nichtflüchtigen speicher mit hoher kapazitätInfo
- Publication number
- ATE340405T1 ATE340405T1 AT00920016T AT00920016T ATE340405T1 AT E340405 T1 ATE340405 T1 AT E340405T1 AT 00920016 T AT00920016 T AT 00920016T AT 00920016 T AT00920016 T AT 00920016T AT E340405 T1 ATE340405 T1 AT E340405T1
- Authority
- AT
- Austria
- Prior art keywords
- nonvolatile memory
- block
- volatile memory
- super block
- memory device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7205—Cleaning, compaction, garbage collection, erase control
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7208—Multiple device management, e.g. distributing data over multiple flash devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/283,728 US6034897A (en) | 1999-04-01 | 1999-04-01 | Space management for managing high capacity nonvolatile memory |
US09/519,226 US6134151A (en) | 1999-04-01 | 2000-03-06 | Space management for managing high capacity nonvolatile memory |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE340405T1 true ATE340405T1 (de) | 2006-10-15 |
Family
ID=26962208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00920016T ATE340405T1 (de) | 1999-04-01 | 2000-03-30 | Raumverwaltung in einem nichtflüchtigen speicher mit hoher kapazität |
Country Status (6)
Country | Link |
---|---|
US (1) | US6262918B1 (de) |
EP (2) | EP1228510B1 (de) |
AT (1) | ATE340405T1 (de) |
AU (1) | AU4061700A (de) |
DE (1) | DE60030876T2 (de) |
WO (1) | WO2000060605A1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6728851B1 (en) | 1995-07-31 | 2004-04-27 | Lexar Media, Inc. | Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices |
US5845313A (en) | 1995-07-31 | 1998-12-01 | Lexar | Direct logical block addressing flash memory mass storage architecture |
US8171203B2 (en) | 1995-07-31 | 2012-05-01 | Micron Technology, Inc. | Faster write operations to nonvolatile memory using FSInfo sector manipulation |
US6978342B1 (en) | 1995-07-31 | 2005-12-20 | Lexar Media, Inc. | Moving sectors within a block of information in a flash memory mass storage architecture |
WO1999045460A2 (en) | 1998-03-02 | 1999-09-10 | Lexar Media, Inc. | Flash memory card with enhanced operating mode detection and user-friendly interfacing system |
US6442067B1 (en) * | 2000-05-23 | 2002-08-27 | Compaq Information Technologies Group, L.P. | Recovery ROM for array controllers |
US6772273B1 (en) | 2000-06-29 | 2004-08-03 | Intel Corporation | Block-level read while write method and apparatus |
US7167944B1 (en) | 2000-07-21 | 2007-01-23 | Lexar Media, Inc. | Block management for mass storage |
US7155559B1 (en) | 2000-08-25 | 2006-12-26 | Lexar Media, Inc. | Flash memory architecture with separate storage of overhead and user data |
US6772274B1 (en) | 2000-09-13 | 2004-08-03 | Lexar Media, Inc. | Flash memory system and method implementing LBA to PBA correlation within flash memory array |
US6763424B2 (en) | 2001-01-19 | 2004-07-13 | Sandisk Corporation | Partial block data programming and reading operations in a non-volatile memory |
GB0123410D0 (en) | 2001-09-28 | 2001-11-21 | Memquest Ltd | Memory system for data storage and retrieval |
GB0123421D0 (en) | 2001-09-28 | 2001-11-21 | Memquest Ltd | Power management system |
GB0123415D0 (en) | 2001-09-28 | 2001-11-21 | Memquest Ltd | Method of writing data to non-volatile memory |
GB0123416D0 (en) | 2001-09-28 | 2001-11-21 | Memquest Ltd | Non-volatile memory control |
TWI240861B (en) * | 2002-01-11 | 2005-10-01 | Integrated Circuit Solution In | Data access method and architecture of flash memory |
AU2003211154A1 (en) * | 2002-02-22 | 2003-09-09 | Lexar Media, Inc. | Removable memory media with integral indicator light |
US7231643B1 (en) | 2002-02-22 | 2007-06-12 | Lexar Media, Inc. | Image rescue system including direct communication between an application program and a device driver |
DE10256509B4 (de) * | 2002-06-19 | 2008-06-12 | Hyperstone Gmbh | Verfahren zum Adressieren von blockweise löschbaren Speichern |
SG120879A1 (en) * | 2002-08-08 | 2006-04-26 | Micron Technology Inc | Packaged microelectronic components |
US6815308B2 (en) * | 2002-08-15 | 2004-11-09 | Micron Technology, Inc. | Use of a dual-tone resist to form photomasks including alignment mark protection, intermediate semiconductor device structures and bulk semiconductor device substrates |
US6906961B2 (en) * | 2003-06-24 | 2005-06-14 | Micron Technology, Inc. | Erase block data splitting |
US7173852B2 (en) * | 2003-10-03 | 2007-02-06 | Sandisk Corporation | Corrected data storage and handling methods |
JP4567966B2 (ja) * | 2003-12-22 | 2010-10-27 | 株式会社東芝 | エミュレーションシステムおよびエミュレーション方法 |
US7484070B1 (en) | 2004-01-09 | 2009-01-27 | Conexant Systems, Inc. | Selective memory block remapping |
US7350044B2 (en) * | 2004-01-30 | 2008-03-25 | Micron Technology, Inc. | Data move method and apparatus |
US20050213399A1 (en) * | 2004-03-29 | 2005-09-29 | Hoover Patricia J | Method and apparatus to write data |
US7725628B1 (en) | 2004-04-20 | 2010-05-25 | Lexar Media, Inc. | Direct secondary device interface by a host |
US7370166B1 (en) | 2004-04-30 | 2008-05-06 | Lexar Media, Inc. | Secure portable storage device |
US7139199B2 (en) * | 2004-06-28 | 2006-11-21 | Intel Corporation | Flash memory file system with transacted operations |
US7464306B1 (en) | 2004-08-27 | 2008-12-09 | Lexar Media, Inc. | Status of overall health of nonvolatile memory |
US7594063B1 (en) | 2004-08-27 | 2009-09-22 | Lexar Media, Inc. | Storage capacity status |
US20060069896A1 (en) * | 2004-09-27 | 2006-03-30 | Sigmatel, Inc. | System and method for storing data |
US7644191B2 (en) * | 2004-11-12 | 2010-01-05 | Emulex Design & Manufacturing Corporation | Legacy-compatible extended command input-output control block |
US7721033B2 (en) * | 2004-12-03 | 2010-05-18 | Emulex Design & Manufacturing Corporation | Interrupt notification block |
US7395404B2 (en) * | 2004-12-16 | 2008-07-01 | Sandisk Corporation | Cluster auto-alignment for storing addressable data packets in a non-volatile memory array |
US7315916B2 (en) * | 2004-12-16 | 2008-01-01 | Sandisk Corporation | Scratch pad block |
US7412560B2 (en) | 2004-12-16 | 2008-08-12 | Sandisk Corporation | Non-volatile memory and method with multi-stream updating |
US8151082B2 (en) * | 2007-12-06 | 2012-04-03 | Fusion-Io, Inc. | Apparatus, system, and method for converting a storage request into an append data storage command |
US8161353B2 (en) | 2007-12-06 | 2012-04-17 | Fusion-Io, Inc. | Apparatus, system, and method for validating that a correct data segment is read from a data storage device |
EP2109812A2 (de) | 2006-12-06 | 2009-10-21 | Fusion Multisystems, Inc. | Vorrichtung, system und verfahren für ein netzwerk mit im server befindlichem speicherbereich |
KR100866624B1 (ko) * | 2007-02-23 | 2008-11-03 | 삼성전자주식회사 | 둘 이상의 비휘발성 메모리 장치들을 제어하는 방법 및 그장치 |
US8122322B2 (en) | 2007-07-31 | 2012-02-21 | Seagate Technology Llc | System and method of storing reliability data |
JP4439569B2 (ja) * | 2008-04-24 | 2010-03-24 | 株式会社東芝 | メモリシステム |
CN101354681B (zh) * | 2008-09-23 | 2010-12-01 | 美商威睿电通公司 | 存储器系统、非易失性存储器的磨损均衡方法及装置 |
US8239614B2 (en) * | 2009-03-04 | 2012-08-07 | Micron Technology, Inc. | Memory super block allocation |
US8095765B2 (en) | 2009-03-04 | 2012-01-10 | Micron Technology, Inc. | Memory block management |
US8209474B1 (en) * | 2009-09-30 | 2012-06-26 | Emc Corporation | System and method for superblock data writes |
KR101796116B1 (ko) | 2010-10-20 | 2017-11-10 | 삼성전자 주식회사 | 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법 |
FR2980905B1 (fr) * | 2011-09-29 | 2014-03-14 | Continental Automotive France | Procede d'effacement d'informations memorisees dans une memoire reinscriptible non volatile, support de memorisation et calculateur de vehicule automobile |
Family Cites Families (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4210959A (en) * | 1978-05-10 | 1980-07-01 | Apple Computer, Inc. | Controller for magnetic disc, recorder, or the like |
FR2426938A1 (fr) | 1978-05-26 | 1979-12-21 | Cii Honeywell Bull | Dispositif de detection de secteurs defectueux et d'allocation de secteurs de remplacement dans une memoire a disques |
US4355376A (en) | 1980-09-30 | 1982-10-19 | Burroughs Corporation | Apparatus and method for utilizing partially defective memory devices |
JPS5764383A (en) | 1980-10-03 | 1982-04-19 | Toshiba Corp | Address converting method and its device |
JPS57132256A (en) | 1981-02-09 | 1982-08-16 | Sony Corp | Memory device |
US4353376A (en) * | 1981-03-12 | 1982-10-12 | Schuler Murry W | Combine having separating and cleaning apparatus |
JPS5877034A (ja) | 1981-10-30 | 1983-05-10 | Hitachi Ltd | 記録方法 |
US4450559A (en) | 1981-12-24 | 1984-05-22 | International Business Machines Corporation | Memory system with selective assignment of spare locations |
JPS58215794A (ja) | 1982-06-08 | 1983-12-15 | Toshiba Corp | 不揮発性メモリ装置 |
JPS58215795A (ja) | 1982-06-08 | 1983-12-15 | Toshiba Corp | 不揮発性メモリ装置 |
US4498146A (en) | 1982-07-30 | 1985-02-05 | At&T Bell Laboratories | Management of defects in storage media |
JPS5945695A (ja) | 1982-09-07 | 1984-03-14 | Fujitsu Ltd | Icメモリ |
US4710871A (en) | 1982-11-01 | 1987-12-01 | Ncr Corporation | Data transmitting and receiving apparatus |
AU557723B2 (en) | 1982-12-17 | 1987-01-08 | Blue Circle Southern Cement Ltd. | Electronic memory system |
JPS59162695A (ja) | 1983-03-07 | 1984-09-13 | Nec Corp | 記憶装置 |
US4896262A (en) | 1984-02-24 | 1990-01-23 | Kabushiki Kaisha Meidensha | Emulation device for converting magnetic disc memory mode signal from computer into semiconductor memory access mode signal for semiconductor memory |
JPS60212900A (ja) | 1984-04-09 | 1985-10-25 | Nec Corp | 半導体固定記憶装置 |
JPS6196598A (ja) | 1984-10-17 | 1986-05-15 | Fuji Electric Co Ltd | 電気的消去可能なp−romのカウントデ−タ記憶方法 |
US4654847A (en) | 1984-12-28 | 1987-03-31 | International Business Machines | Apparatus for automatically correcting erroneous data and for storing the corrected data in a common pool alternate memory array |
JPS61208673A (ja) | 1985-03-12 | 1986-09-17 | Matsushita Electric Ind Co Ltd | 情報記録再生装置 |
US4744062A (en) | 1985-04-23 | 1988-05-10 | Hitachi, Ltd. | Semiconductor integrated circuit with nonvolatile memory |
JPS62102482A (ja) | 1985-10-28 | 1987-05-12 | Matsushita Electric Ind Co Ltd | 情報記録再生装置 |
JP2664137B2 (ja) | 1985-10-29 | 1997-10-15 | 凸版印刷株式会社 | Icカード |
US4800520A (en) | 1985-10-29 | 1989-01-24 | Kabushiki Kaisha Toshiba | Portable electronic device with garbage collection function |
US4746998A (en) | 1985-11-20 | 1988-05-24 | Seagate Technology, Inc. | Method for mapping around defective sectors in a disc drive |
US4924331A (en) | 1985-11-20 | 1990-05-08 | Seagate Technology, Inc. | Method for mapping around defective sectors in a disc drive |
JPS62173496A (ja) | 1986-01-28 | 1987-07-30 | 日本電気株式会社 | 標準パタン登録回路 |
US4757474A (en) | 1986-01-28 | 1988-07-12 | Fujitsu Limited | Semiconductor memory device having redundancy circuit portion |
JPH07109717B2 (ja) | 1986-05-31 | 1995-11-22 | キヤノン株式会社 | メモリ書き込み制御方法 |
US4953122A (en) | 1986-10-31 | 1990-08-28 | Laserdrive Ltd. | Pseudo-erasable and rewritable write-once optical disk memory system |
JPS63183700A (ja) | 1987-01-26 | 1988-07-29 | Mitsubishi Electric Corp | Eepromアクセス方法 |
US5198380A (en) | 1988-06-08 | 1993-03-30 | Sundisk Corporation | Method of highly compact EPROM and flash EEPROM devices |
US5168465A (en) | 1988-06-08 | 1992-12-01 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
US5268319A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
US5268870A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Flash EEPROM system and intelligent programming and erasing methods therefor |
US5268318A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
US5293560A (en) | 1988-06-08 | 1994-03-08 | Eliyahou Harari | Multi-state flash EEPROM system using incremental programing and erasing methods |
US4914529A (en) | 1988-07-18 | 1990-04-03 | Western Digital Corp. | Data disk defect handling using relocation ID fields |
US5070474A (en) | 1988-07-26 | 1991-12-03 | Disk Emulation Systems, Inc. | Disk emulation system |
US5535328A (en) * | 1989-04-13 | 1996-07-09 | Sandisk Corporation | Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells |
EP0618535B1 (de) | 1989-04-13 | 1999-08-25 | SanDisk Corporation | EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher |
US5226168A (en) | 1989-04-25 | 1993-07-06 | Seiko Epson Corporation | Semiconductor memory configured to emulate floppy and hard disk magnetic storage based upon a determined storage capacity of the semiconductor memory |
US5200959A (en) | 1989-10-17 | 1993-04-06 | Sundisk Corporation | Device and method for defect handling in semi-conductor memory |
US5303198A (en) | 1990-09-28 | 1994-04-12 | Fuji Photo Film Co., Ltd. | Method of recording data in memory card having EEPROM and memory card system using the same |
EP0489204B1 (de) | 1990-12-04 | 1995-08-16 | Hewlett-Packard Limited | Wiederprogrammierbare Datenspeicherungsanlage |
GB2251324B (en) | 1990-12-31 | 1995-05-10 | Intel Corp | File structure for a non-volatile semiconductor memory |
US5270979A (en) | 1991-03-15 | 1993-12-14 | Sundisk Corporation | Method for optimum erasing of EEPROM |
US5504760A (en) | 1991-03-15 | 1996-04-02 | Sandisk Corporation | Mixed data encoding EEPROM system |
US5396468A (en) | 1991-03-15 | 1995-03-07 | Sundisk Corporation | Streamlined write operation for EEPROM system |
US5663901A (en) | 1991-04-11 | 1997-09-02 | Sandisk Corporation | Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems |
JPH04332999A (ja) | 1991-05-07 | 1992-11-19 | Hitachi Koki Co Ltd | メモリの使用方法 |
JP2582487B2 (ja) | 1991-07-12 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体メモリを用いた外部記憶システム及びその制御方法 |
US5430859A (en) | 1991-07-26 | 1995-07-04 | Sundisk Corporation | Solid state memory system including plural memory chips and a serialized bus |
US5438573A (en) | 1991-09-13 | 1995-08-01 | Sundisk Corporation | Flash EEPROM array data and header file structure |
US5778418A (en) | 1991-09-27 | 1998-07-07 | Sandisk Corporation | Mass computer storage system having both solid state and rotating disk types of memory |
US5263003A (en) * | 1991-11-12 | 1993-11-16 | Allen-Bradley Company, Inc. | Flash memory circuit and method of operation |
JPH05151097A (ja) | 1991-11-28 | 1993-06-18 | Fujitsu Ltd | 書換回数制限型メモリのデータ管理方式 |
JPH05233426A (ja) | 1992-02-20 | 1993-09-10 | Fujitsu Ltd | フラッシュ・メモリ使用方法 |
US5532962A (en) | 1992-05-20 | 1996-07-02 | Sandisk Corporation | Soft errors handling in EEPROM devices |
JP3328321B2 (ja) * | 1992-06-22 | 2002-09-24 | 株式会社日立製作所 | 半導体記憶装置 |
US5315541A (en) | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
US5428621A (en) | 1992-09-21 | 1995-06-27 | Sundisk Corporation | Latent defect handling in EEPROM devices |
US5341330A (en) | 1992-10-30 | 1994-08-23 | Intel Corporation | Method for writing to a flash memory array during erase suspend intervals |
US5337275A (en) | 1992-10-30 | 1994-08-09 | Intel Corporation | Method for releasing space in flash EEPROM memory array to allow the storage of compressed data |
US5341339A (en) | 1992-10-30 | 1994-08-23 | Intel Corporation | Method for wear leveling in a flash EEPROM memory |
US5357475A (en) | 1992-10-30 | 1994-10-18 | Intel Corporation | Method for detaching sectors in a flash EEPROM memory array |
JP3594626B2 (ja) * | 1993-03-04 | 2004-12-02 | 株式会社ルネサステクノロジ | 不揮発性メモリ装置 |
US5388083A (en) | 1993-03-26 | 1995-02-07 | Cirrus Logic, Inc. | Flash memory mass storage architecture |
US5479638A (en) | 1993-03-26 | 1995-12-26 | Cirrus Logic, Inc. | Flash memory mass storage architecture incorporation wear leveling technique |
US5485595A (en) * | 1993-03-26 | 1996-01-16 | Cirrus Logic, Inc. | Flash memory mass storage architecture incorporating wear leveling technique without using cam cells |
US5353256A (en) | 1993-06-30 | 1994-10-04 | Intel Corporation | Block specific status information in a memory device |
US5422842A (en) | 1993-07-08 | 1995-06-06 | Sundisk Corporation | Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells |
US5566314A (en) | 1993-08-30 | 1996-10-15 | Lucent Technologies Inc. | Flash memory device employing unused cell arrays to update files |
US5661053A (en) | 1994-05-25 | 1997-08-26 | Sandisk Corporation | Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
US5508971A (en) | 1994-10-17 | 1996-04-16 | Sandisk Corporation | Programmable power generation circuit for flash EEPROM memory systems |
JPH08263361A (ja) * | 1995-03-23 | 1996-10-11 | Mitsubishi Electric Corp | フラッシュメモリカード |
-
2000
- 2000-03-30 AU AU40617/00A patent/AU4061700A/en not_active Abandoned
- 2000-03-30 AT AT00920016T patent/ATE340405T1/de not_active IP Right Cessation
- 2000-03-30 EP EP00920016A patent/EP1228510B1/de not_active Expired - Lifetime
- 2000-03-30 WO PCT/US2000/008686 patent/WO2000060605A1/en active IP Right Grant
- 2000-03-30 EP EP06076506A patent/EP1729304B1/de not_active Expired - Lifetime
- 2000-03-30 DE DE60030876T patent/DE60030876T2/de not_active Expired - Lifetime
- 2000-06-30 US US09/610,545 patent/US6262918B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1228510A1 (de) | 2002-08-07 |
EP1729304B1 (de) | 2012-10-17 |
DE60030876D1 (de) | 2006-11-02 |
EP1228510B1 (de) | 2006-09-20 |
EP1729304A1 (de) | 2006-12-06 |
EP1228510A4 (de) | 2005-01-19 |
AU4061700A (en) | 2000-10-23 |
WO2000060605A1 (en) | 2000-10-12 |
DE60030876T2 (de) | 2007-05-03 |
US6262918B1 (en) | 2001-07-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE340405T1 (de) | Raumverwaltung in einem nichtflüchtigen speicher mit hoher kapazität | |
US6327639B1 (en) | Method and apparatus for storing location identification information within non-volatile memory devices | |
KR100716576B1 (ko) | 메모리 카드, 논리 어드레스의 할당방법 및 데이터 기록방법 | |
US6426893B1 (en) | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks | |
KR100618298B1 (ko) | 기록 시스템, 데이터 기록 장치, 메모리 장치 및 데이터기록 방법 | |
US7966462B2 (en) | Multi-channel flash module with plane-interleaved sequential ECC writes and background recycling to restricted-write flash chips | |
US7672172B2 (en) | Memory configuration of a composite memory device | |
JP4362534B2 (ja) | フラッシュメモリシステムにおけるハウスキーピング操作のスケジューリング | |
EP1739683B1 (de) | Platzverwaltung zur Verwaltung eines nichtflüchtigen Hochleistungsspeichers | |
US7934074B2 (en) | Flash module with plane-interleaved sequential writes to restricted-write flash chips | |
KR100300250B1 (ko) | 반도체기억장치및그데이터관리방법 | |
CA2355082A1 (en) | A semiconductor memory card access apparatus, a computer-readable recording medium, an initialization method, and a semiconductor memory card | |
KR970076215A (ko) | 불휘발성 반도체 기억 장치 | |
RU2001120348A (ru) | Устройство доступа к полупроводниковой карте памяти, компьютерно-считываемый носитель записи, способ инициализации и полупроводниковая карта памяти | |
KR930020469A (ko) | 불휘발성 반도체 메모리 장치 | |
JP2008524703A (ja) | クラスタ自動位置合わせ | |
KR20090117934A (ko) | 메모리 시스템 | |
US5724544A (en) | IC memory card utilizing dual eeproms for image and management data | |
US20050204115A1 (en) | Semiconductor memory device, memory controller and data recording method | |
JP2003308247A5 (de) | ||
JP3793464B2 (ja) | 半導体記憶装置 | |
JPH06139131A (ja) | メモリカード装置 | |
JP2006215595A (ja) | 記憶装置 | |
KR20040006760A (ko) | 메모리 기록 제어장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |