Abstract—In this work authors presented improvement performance of GaAs solar cell of antireflect... more Abstract—In this work authors presented improvement performance of GaAs solar cell of antireflection coating and texturing using PC1D simulation. About 32.58 % light reflect from a bare GaAs surface and giving external quantum efficiency about 67.32%.This paper presented the improvement of external quantum efficiency (EQE) of GaAs solar cell about 14.23 % using antifriction coating (ARC) of Silicon-di-Oxide (SiO2) with refractive index 1.55 at thickness 121 nm and about 14.77 % using ARC of and Indium Tin Oxide (ITO) with refractive index 1.92 at 100 nm. The structure of SiO2/GaAs is showing reflectance about 4.370 % and the structure of ITO/GaAs is showing reflectance about 0.0087 % based on AM1.5 photon flux from 300-1200nm. Further EQE can be improved about 1.62 % using SiO2 ARC and 2.56 % using ITO ARC with deposition of 5-10 nm front surfaces texturing over ARC by texturing angle of 54.740. Combination of ARC and texture improve the reflectance about 4.36%.
In this work authors presented improvement performance of GaAs solar cell of antireflection coati... more In this work authors presented improvement performance of GaAs solar cell of antireflection coating and texturing using PC1D simulation. About 32.58% light reflect from a bare GaAs surface and giving external quantum efficiency about 67.32%.This paper presented the improvement of external quantum efficiency (EQE) of GaAs solar cell about 14.23% using antifriction coating (ARC) of Silicon-di-Oxide (SiO2) with refractive index 1.55 at thickness 121 nm and about 14.77% using ARC of and Indium Tin Oxide (ITO) with refractive index 1.92 at 100 nm. The structure of SiO2/GaAs is showing reflectance about 4.370% and the structure of ITO/GaAs is showing reflectance about 0.0087% based on AM1.5 photon flux from 300-1200nm. Further EQE can be improved about 1.62% using SiO2 ARC and 2.56% using ITO ARC with deposition of 5-10 nm front surfaces texturing over ARC by texturing angle of 54.740. Combination of ARC and texture improve the reflectance about 4.36%. Keywords—Solar cell; ARC; PC1D; ITO;...
International Journal of Research in Engineering and Technology, 2015
Optical losses limit the excess carriers generation in absorber part of multijuction (MJ) solar c... more Optical losses limit the excess carriers generation in absorber part of multijuction (MJ) solar cell. The generation of excess carriers is directly proportional to photogenerated current solar cell. Therefore, reduction of optical losses is fundamentally important for improving the power conversion efficiency. Thickness of layers strongly influences the performance of MJ solar cell. In this study we simulated a MJ solar cell of Air/ZnO/SiC/c-Si/a-Si(n)/Al structure using Wafer Ray Tracer (WRT) simulation software and optimized the thicknesses of the layers for photogenerated current. The simulation result shows that without SiC layer, only 57.48% of incident light is absorbed and generates 26.85 mA/cm2 photogenerated current in solar cell. A 70 nm thickness of optimized SiC layer is increasing the light absorption 22.16% and photogenerated current 38.54%. Result shows that there is no transmission of light through the absorber layer. The MJ solar cell without Back Surface Field (BSF) layer of a-Si(n) shows photogenerated current of 37.05 mA/cm2 which can be improved to 37.24 mA/cm2 with a 100 nm thickness of a-Si(n). The c-Si absorber layer shows highest absorptance within 500 nm-1000 nm wavelength of light spectrum with 100 nm thickness of a-Si(n). An a-Si(n) BSF layer at the back surface minimizes the effective back-surface recombination velocity and improves the collection probability of minority carriers of solar cell. Furthermore a 100 nm Al rear contact improves the photogenerated current of MJ solar cell to 37.25 mA/cm2. An Al rear contact layer improves the mechanical strength of c-Si absorber layer. The electrical property of Al improves the excess carriers' collection probability of MJ solar cell.
Abstract—In this work authors presented improvement performance of GaAs solar cell of antireflect... more Abstract—In this work authors presented improvement performance of GaAs solar cell of antireflection coating and texturing using PC1D simulation. About 32.58 % light reflect from a bare GaAs surface and giving external quantum efficiency about 67.32%.This paper presented the improvement of external quantum efficiency (EQE) of GaAs solar cell about 14.23 % using antifriction coating (ARC) of Silicon-di-Oxide (SiO2) with refractive index 1.55 at thickness 121 nm and about 14.77 % using ARC of and Indium Tin Oxide (ITO) with refractive index 1.92 at 100 nm. The structure of SiO2/GaAs is showing reflectance about 4.370 % and the structure of ITO/GaAs is showing reflectance about 0.0087 % based on AM1.5 photon flux from 300-1200nm. Further EQE can be improved about 1.62 % using SiO2 ARC and 2.56 % using ITO ARC with deposition of 5-10 nm front surfaces texturing over ARC by texturing angle of 54.740. Combination of ARC and texture improve the reflectance about 4.36%.
In this work authors presented improvement performance of GaAs solar cell of antireflection coati... more In this work authors presented improvement performance of GaAs solar cell of antireflection coating and texturing using PC1D simulation. About 32.58% light reflect from a bare GaAs surface and giving external quantum efficiency about 67.32%.This paper presented the improvement of external quantum efficiency (EQE) of GaAs solar cell about 14.23% using antifriction coating (ARC) of Silicon-di-Oxide (SiO2) with refractive index 1.55 at thickness 121 nm and about 14.77% using ARC of and Indium Tin Oxide (ITO) with refractive index 1.92 at 100 nm. The structure of SiO2/GaAs is showing reflectance about 4.370% and the structure of ITO/GaAs is showing reflectance about 0.0087% based on AM1.5 photon flux from 300-1200nm. Further EQE can be improved about 1.62% using SiO2 ARC and 2.56% using ITO ARC with deposition of 5-10 nm front surfaces texturing over ARC by texturing angle of 54.740. Combination of ARC and texture improve the reflectance about 4.36%. Keywords—Solar cell; ARC; PC1D; ITO;...
International Journal of Research in Engineering and Technology, 2015
Optical losses limit the excess carriers generation in absorber part of multijuction (MJ) solar c... more Optical losses limit the excess carriers generation in absorber part of multijuction (MJ) solar cell. The generation of excess carriers is directly proportional to photogenerated current solar cell. Therefore, reduction of optical losses is fundamentally important for improving the power conversion efficiency. Thickness of layers strongly influences the performance of MJ solar cell. In this study we simulated a MJ solar cell of Air/ZnO/SiC/c-Si/a-Si(n)/Al structure using Wafer Ray Tracer (WRT) simulation software and optimized the thicknesses of the layers for photogenerated current. The simulation result shows that without SiC layer, only 57.48% of incident light is absorbed and generates 26.85 mA/cm2 photogenerated current in solar cell. A 70 nm thickness of optimized SiC layer is increasing the light absorption 22.16% and photogenerated current 38.54%. Result shows that there is no transmission of light through the absorber layer. The MJ solar cell without Back Surface Field (BSF) layer of a-Si(n) shows photogenerated current of 37.05 mA/cm2 which can be improved to 37.24 mA/cm2 with a 100 nm thickness of a-Si(n). The c-Si absorber layer shows highest absorptance within 500 nm-1000 nm wavelength of light spectrum with 100 nm thickness of a-Si(n). An a-Si(n) BSF layer at the back surface minimizes the effective back-surface recombination velocity and improves the collection probability of minority carriers of solar cell. Furthermore a 100 nm Al rear contact improves the photogenerated current of MJ solar cell to 37.25 mA/cm2. An Al rear contact layer improves the mechanical strength of c-Si absorber layer. The electrical property of Al improves the excess carriers' collection probability of MJ solar cell.
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