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Experimental study and analysis on the effect of using a wide range of different supply voltage values on the reliability, latency, and retention characteristics of DDR3L DRAM SO-DIMMs

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Characterization results of modern DRAM devices under reduced-voltage operation

Characterization data collected on 31 DDR3L (low-voltage) SO-DIMMs manufactured between 2015 and 2016. You can find the background and analysis on the data in our SIGMETRICS'17/POMACS'17 paper "Understanding Reduced-Voltage Operation in Modern DRAM Chips: Characterization, Analysis, and Mechanisms". The arxiv version (two-column format) is also avaiable here.

characterization_results

This folder contains the data points collected from our experiments.

dimm_faulty_cachelines_out.csv

The fraction of cache lines observing at least a one bit of error (i.e., bit flip) in each DIMM across a wide range of voltage levels. Analysis is in Section 4.1 of the paper.

spatial_locality

Spatial locality of voltage-induced errors. Analysis is in Section 4.3 of the paper.

retention_time_profile.csv

The retention time profile of DDR3L SO-DIMMs under different voltage levels. Analysis is in Section 4.6 of the paper.

SPICE_circuit_model

This folder contains the SPICE model of a DRAM array. The tool used for simulation is LTspice. The analysis is in Section 4.2, and the model description is in Appendix C of the paper.

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Experimental study and analysis on the effect of using a wide range of different supply voltage values on the reliability, latency, and retention characteristics of DDR3L DRAM SO-DIMMs

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