[HTML][HTML] Grain boundary induced bias instability in soluble acene-based thin-film transistors

KV Nguyen, MM Payne, JE Anthony, JH Lee, E Song… - Scientific reports, 2016 - nature.com
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

KV Nguyen, MM Payne, JE Anthony, JH Lee… - Scientific …, 2016 - hero.epa.gov
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …

[PDF][PDF] Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

KV Nguyen, MM Payne, JE Anthony, JH Lee, E Song - 2016 - uknowledge.uky.edu
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …

[PDF][PDF] Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

KV Nguyen, MM Payne, JE Anthony, JH Lee, E Song… - academia.edu
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …

[PDF][PDF] Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

KV Nguyen, MM Payne, JE Anthony, JH Lee, E Song… - oasis.postech.ac.kr
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …

[PDF][PDF] Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

KV Nguyen, MM Payne, JE Anthony, JH Lee, E Song… - cyberleninka.org
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

KV Nguyen, MM Payne, JE Anthony… - Scientific …, 2016 - pubmed.ncbi.nlm.nih.gov
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

KV Nguyen, MM Payne, JE Anthony, JH Lee… - Scientific …, 2016 - ui.adsabs.harvard.edu
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …

[PDF][PDF] Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

KV Nguyen, MM Payne, JE Anthony, JH Lee, E Song… - core.ac.uk
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …

[HTML][HTML] Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

KV Nguyen, MM Payne, JE Anthony, JH Lee… - Scientific …, 2016 - ncbi.nlm.nih.gov
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect
transistors (OFETs) have a strong influence on device performance, a substantial number of …