Rolland et al., 1984 - Google Patents

Vapour deposition of lead on Ag (111) and equilibrium surface segregation from Ag Pb (111) solid solutions: A leed-aes comparative study

Rolland et al., 1984

Document ID
5810765037765336598
Author
Rolland A
Bernardini J
Barthes-Labrousse M
Publication year
Publication venue
Surface science

External Links

Snippet

Low energy electron diffraction and Auger electron spectroscopy were used to examine the first stages of formation of ultrathin lead layers either deposited from the vapour onto a Ag (111) surface at ambient temperature and 115° C or segregated from a Ag Pb (111) solid …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide

Similar Documents

Publication Publication Date Title
Mader et al. Metastable evaporated thin films of Cu Ag and Co Au alloys—I occurrence and morphology of phases
Yen et al. Spheroidization of tubular voids in Al2 O3 crystals at high temperatures
Saitoh et al. Initial growth process and surface structure of Ag on Si (111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES
Rolland et al. Vapour deposition of lead on Ag (111) and equilibrium surface segregation from Ag Pb (111) solid solutions: A leed-aes comparative study
Höfler et al. Diffusion of bismuth and gold in nanocrystalline copper
Kwok et al. Growth of highly oriented CdS thin films by laser‐evaporation deposition
Höfgen et al. Annealing and recrystallization of amorphous silicon carbide produced by ion implantation
Barthes et al. The first stages in the formation of ultrathin nickel layers on Ag (111): A low energy electron diffraction-Auger electron spectroscopy study
Lu et al. The energy gap of rf-sputtered BaTiO3 thin films with different grain size
Adams et al. Phase separation during co-deposition of Al–Ge thin films
Bart et al. A LEED study of the (0001) a-quartz surface reconstruction
Biunno et al. Laser deposition of epitaxial titanium nitride films on (100) MgO
Menzel Studies in the preparation and behaviour of nearly perfect metal surfaces
Schwab et al. Properties of CeO2 and CeO2− x films Part I. Preparation and crystallographic properties
Huang et al. Chemical etching of ion beam deposited AlN and AlN: H
Rawlings et al. Substrate-diffusion-controlled film growth: Silver and copper on lead (111)
Schuller et al. Superconductivity and magnetism in metallic superlattices
Steinhage et al. Condensation and epitaxial growth of K on W (001)
Popović et al. Low temperature diffusion effects on microstructural changes in thick gold films on silicon
Guo et al. Surface Geometric Structures of Cu Deposited upon α-Al _2 O _3 (0001)
Noggle The preparation and characterization of single crystal silver films
Reiley et al. The structure and mechanical properties of physically vapor deposited chromium
Ogawa et al. In situ studies of fast atom bombardment and annealing processes by reflection electron microscopy
Sherman et al. Observations of sputtered thin film growth
Shaw-Klein et al. Thermal conductivity of aluminum nitride thin films