Lee et al., 1996 - Google Patents
New approach to manufacturing field emitter arrays with sub‐half‐micron gate aperturesLee et al., 1996
View PDF- Document ID
- 15861588399777974135
- Author
- Lee C
- Ahn H
- Park B
- Lee J
- Publication year
- Publication venue
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
External Links
Snippet
As an attempt to develop a field emitter array with sub‐half‐micron gate openings for low voltage operation, a new fabrication method has been proposed and demonstrated. The key element of the new process is forming the gate insulator by local oxidation of silicon …
- 238000004519 manufacturing process 0 title abstract description 19
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted to the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with micro-engineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5865657A (en) | Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material | |
WO1997047020A9 (en) | Gated electron emission device and method of fabrication thereof | |
Uh et al. | Process design and emission properties of gated n+ polycrystalline silicon field emitter arrays for flat-panel display applications | |
US6632114B2 (en) | Method for manufacturing field emission device | |
JP2728813B2 (en) | Field emission type electron source and method of manufacturing the same | |
Lee et al. | New approach to manufacturing field emitter arrays with sub‐half‐micron gate apertures | |
EP1115133B1 (en) | Field emission device and method for fabricating the same | |
US5607335A (en) | Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material | |
Uh et al. | A novel fabrication process of a silicon field emitter array with thermal oxide as a gate insulator | |
Oh et al. | Fabrication of metal field emitter arrays for low voltage and high current operation | |
Lee et al. | A new fabrication process of field emitter arrays with submicron gate apertures using local oxidation of silicon | |
US6963160B2 (en) | Gated electron emitter having supported gate | |
Shih et al. | Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors | |
US6572425B2 (en) | Methods for forming microtips in a field emission device | |
Lee et al. | Fabrication and characterization of silicon field emitter arrays with focusing electrode by the chemical mechanical polishing process | |
Lin et al. | Field-emission enhancement of Mo-tip field-emitted arrays fabricated by using a redox method | |
Busta | Lateral cold cathode triode structures fabricated on insulating substrates | |
Lee et al. | Scaling-down of cone-like field emitter using LOCOS | |
Gray et al. | Silicon field‐emitter arrays for cathodoluminescent flat‐panel displays | |
Lee et al. | Fabrication and characterization of volcano-shaped field emitters surrounded by planar gates | |
Lee et al. | A new approach to manufacturing field emitter arrays with submicron gate apertures | |
KR100246254B1 (en) | Manufacturing method of field emission device having silicide as emitter and gate | |
KR19990067713A (en) | Field emission device, method for its fabrication, and use of said device | |
Lee et al. | A new fabrication process of volcano-shaped field emitters for large-area display applications | |
KR100701750B1 (en) | Field Emission Array and method for fabricating same |