Lee, 1998 - Google Patents
Fabrication of Si3N4/SiC composite by reaction‐bonding and gas‐pressure sinteringLee, 1998
- Document ID
- 13939909607010506893
- Author
- Lee S
- Publication year
- Publication venue
- Journal of the American Ceramic Society
External Links
Snippet
Si3N4/SiC composite materials have been fabricated by reaction‐sintering and postsintering steps. The green body containing Si metal and SiC particles was reaction‐sintered at 1370° C in a flowing N2/H2 gas mixture. The initial reaction product was dominated by alpha …
- 229910003465 moissanite 0 title abstract description 70
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