Fischer et al., 1986 - Google Patents

A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates

Fischer et al., 1986

Document ID
13345174105424598960
Author
Fischer R
Chand N
Kopp W
Peng C
Morkoc H
Gleason K
Scheitlin D
Publication year
Publication venue
IEEE transactions on electron devices

External Links

Snippet

In order to assess GaAs on Si technology, we have made a performance comparison of GaAs MESFET's grown and fabricated on Si and GaAs substrates under identical conditions and report the first microwave results. The GaAs MESFET's on Si with 1.2-µm gate length …
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