WO2022218376A1 - Bulk acoustic resonator having protrusion and/or recess on lower side of piezoelectric layer, and filter and electronic device - Google Patents

Bulk acoustic resonator having protrusion and/or recess on lower side of piezoelectric layer, and filter and electronic device Download PDF

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Publication number
WO2022218376A1
WO2022218376A1 PCT/CN2022/086818 CN2022086818W WO2022218376A1 WO 2022218376 A1 WO2022218376 A1 WO 2022218376A1 CN 2022086818 W CN2022086818 W CN 2022086818W WO 2022218376 A1 WO2022218376 A1 WO 2022218376A1
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Prior art keywords
piezoelectric layer
bottom electrode
layer
protrusion
depression
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PCT/CN2022/086818
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French (fr)
Chinese (zh)
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黄源清
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诺思(天津)微系统有限责任公司
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Publication of WO2022218376A1 publication Critical patent/WO2022218376A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters

Definitions

  • Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator and a method for manufacturing the same, a filter having the resonator, and an electronic device.
  • FBAR Film Bulk Acoustic Resonator
  • BAW Bulk Acoustic Resonator
  • the structural main body of the thin film bulk acoustic wave resonator is a "sandwich" structure composed of an electrode-piezoelectric film-electrode, that is, a piezoelectric material is sandwiched between two metal electrode layers.
  • the FBAR uses the inverse piezoelectric effect to convert the input electrical signal into mechanical resonance, and then uses the piezoelectric effect to convert the mechanical resonance into an electrical signal output.
  • the film bulk acoustic wave resonator mainly uses the longitudinal piezoelectric coefficient of the piezoelectric film to generate the piezoelectric effect, so its main working mode is the longitudinal wave mode in the thickness direction, that is, the sound wave of the bulk acoustic wave resonator is mainly in the film body of the resonator, and the main working mode is the longitudinal wave mode in the thickness direction.
  • the vibration direction is in the longitudinal direction.
  • the lateral Lamb wave will leak out from the lateral direction of the piezoelectric film layer, resulting in acoustic loss, thus making the Q value of the resonator. decrease.
  • At least one of a convex structure, a concave structure and a bridge wing structure is arranged at the edge of the effective area of the resonator, as shown in FIG. 1 .
  • the Q value of the resonator is improved by arranging a convex structure or a concave structure at the edge of the effective area of the resonator, it is difficult to prepare a concave structure or a convex structure on the lower side of the piezoelectric layer due to the limitation of the manufacturing process. Keep the piezoelectric layer flat within the active area of the resonator.
  • the present invention is proposed to alleviate or solve at least one aspect of the above-mentioned problems in the prior art.
  • a bulk acoustic wave resonator including a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer disposed between the bottom electrode and the top electrode.
  • the lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer and/or a protrusion under the piezoelectric layer, and the upper surface of the piezoelectric layer is at a position corresponding to the depression under the piezoelectric layer and/or the protrusion under the piezoelectric layer for a flat surface.
  • a bulk acoustic wave resonator including a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer disposed between the bottom electrode and the top electrode.
  • the lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and the upper surface of the piezoelectric layer is provided with an upper protrusion on the piezoelectric layer at a position corresponding to the depression in the piezoelectric layer; and/or the lower surface of the piezoelectric layer A lower protrusion of the piezoelectric layer is provided, and an upper surface of the piezoelectric layer is provided with a depression on the piezoelectric layer at a position corresponding to the lower protrusion of the piezoelectric layer.
  • a method for manufacturing a bulk acoustic wave resonator includes a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a method disposed between the bottom electrode and the top electrode
  • the piezoelectric layer includes: forming a bottom electrode depression and/or a bottom electrode protrusion on the upper surface of the bottom electrode; and depositing the piezoelectric layer, so that the lower surface of the piezoelectric layer is provided with the bottom electrode depression.
  • the position corresponding to the protrusion under the electric layer and/or the depression under the piezoelectric layer is a flat surface.
  • a method for manufacturing a bulk acoustic wave resonator includes a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a method disposed between the bottom electrode and the top electrode
  • the piezoelectric layer includes: forming a bottom electrode depression and/or a bottom electrode protrusion on the upper surface of the bottom electrode; and depositing the piezoelectric layer, so that the lower surface of the piezoelectric layer is provided with the bottom electrode depression.
  • Corresponding protrusions under the piezoelectric layer and the upper surface of the piezoelectric layer are provided with depressions on the piezoelectric layer corresponding to the protrusions under the piezoelectric layer, and/or the piezoelectric layer is deposited so that the lower surface of the piezoelectric layer is provided with The lower piezoelectric layer is recessed corresponding to the protrusion on the bottom electrode, and the upper surface of the piezoelectric layer is provided with the upper piezoelectric layer protrusion corresponding to the lower recess of the piezoelectric layer.
  • Embodiments of the present invention also relate to a filter comprising the above-mentioned bulk acoustic wave resonator.
  • Embodiments of the present invention also relate to an electronic device comprising the above-mentioned filter or the above-mentioned resonator.
  • FIG. 1 is a schematic cross-sectional view of a known bulk acoustic wave resonator
  • FIG. 2 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 3 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • FIG. 4 is a simulation effect diagram showing the change of the average value of the Q value of the BAW resonator in FIG. 1 and FIG. 2 near the series resonance point, where 301 corresponds to the change of the Q value with the change of the Q value above the top electrode in FIG. 1 .
  • the variation of the width of the depression, 302 corresponds to the variation of the Q value with the width of the protrusion under the piezoelectric layer on the lower side of the piezoelectric layer in FIG. 2;
  • 5A-5H are a series of schematic cross-sectional views illustrating a process flow for fabricating the BAW resonator shown in FIG. 2 according to an exemplary embodiment of the present invention
  • FIG. 6 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the acoustic mirror is a Bragg reflector;
  • FIG. 7 is a schematic cross-sectional view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present invention, wherein an auxiliary layer for forming a recess on the bottom electrode on the upper surface of the bottom electrode is shown;
  • FIGS. 8-9 are schematic cross-sectional views of a bulk acoustic wave resonator according to various exemplary embodiments of the present invention, wherein the bottom electrode recess on the upper surface of the bottom electrode conducts to other film layer structures in the resonator.
  • Substrate, optional materials are single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.
  • Acoustic mirror which can be a cavity, such as Fig. 2.
  • an acoustic mirror in the form of a Bragg reflection layer can also be used as an equivalent form of a cavity-type acoustic mirror.
  • the acoustic mirror in the form of a Bragg reflection layer includes Bragg reflection layers arranged alternately. 201 and 202.
  • the material can be silicon dioxide, doped silicon dioxide, etc.
  • the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite of the above metals or their alloys.
  • Piezoelectric layer which can be a single crystal piezoelectric material, optional, such as: single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate (PZT), single crystal Potassium niobate, single crystal quartz film, or single crystal lithium tantalate and other materials can also be polycrystalline piezoelectric materials (corresponding to single crystal, non-single crystal materials), optional, such as polycrystalline aluminum nitride, Zinc oxide, PZT, etc., can also be a rare earth element doped material containing a certain atomic ratio of the above materials, for example, can be doped aluminum nitride, and doped aluminum nitride contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (
  • the top electrode the material of which can be the same as the bottom electrode, can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
  • the top and bottom electrode materials are generally the same, but can also be different.
  • the acoustic mismatch structure may not be set.
  • 601 Bridge structure and/or cantilever structure.
  • Protrusion structure or protrusion the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
  • 603 Depressed structures or depressions.
  • a protective layer or a process layer the material of which is generally a dielectric material, such as aluminum nitride, silicon dioxide, silicon nitride, and the like. As can be understood, the protective layer or process layer 70 may also not be provided.
  • the piezoelectric layer is recessed.
  • an auxiliary layer which may be a seed layer or a material layer of the same material as that of the bottom electrode.
  • auxiliary recess which is defined by the auxiliary layer 301 .
  • the BAW resonator includes a substrate 10 , an acoustic mirror 20 , a bottom electrode 30 , a top electrode 50 and a piezoelectric layer 40 disposed between the bottom electrode 30 and the top electrode 50 , wherein the acoustic mirror 20 is a cavity form.
  • the lower surface of the piezoelectric layer 40 is provided with a lower piezoelectric layer protrusion 101
  • the upper surface of the piezoelectric layer is a flat surface at a position corresponding to the piezoelectric layer lower protrusion 101 .
  • the height of the protrusions 101 under the piezoelectric layer is not greater than 500 nm, which is favorable for forming the upper surface of the piezoelectric layer 40 into a flat surface during the deposition process.
  • the upper side of the top electrode 50 is further provided with an acoustic mismatch structure 60 , which includes a bridge structure or a cantilever structure 601 , a protrusion 602 and a recess 603 .
  • the acoustic mismatch structure 60 may not be provided, and the acoustic mismatch structure 60 may only be provided with one or two of the bridge structure or the cantilever structure 601 , the protrusion 602 , and the recess 603 .
  • the ratio of the height of the protrusions 101 under the piezoelectric layer to the thickness of the piezoelectric layer 40 is not greater than 1/5.
  • the surface is formed as a flat surface during deposition.
  • the thickness of the piezoelectric layer 40 is the distance between the upper surface of the piezoelectric layer and the flat surface of the lower surface of the piezoelectric layer on which the portion other than the lower protrusion of the piezoelectric layer is provided.
  • the protrusions 101 under the piezoelectric layer in FIG. 2 can also be replaced by depressions 102 under the piezoelectric layer.
  • the depth of the depression 102 under the piezoelectric layer is not greater than 500 nm, which is favorable for forming the upper surface of the piezoelectric layer 40 into a flat surface during the deposition process, or the depth of the depression 102 under the piezoelectric layer is not greater than 500 nm.
  • the ratio of the depth to the thickness of the piezoelectric layer is not greater than 1/5, and this ratio range is favorable for forming the upper surface of the piezoelectric layer 40 as a flat surface during the deposition process.
  • the thickness of the piezoelectric layer is the distance between the upper surface of the piezoelectric layer and the flat surface of the lower surface of the piezoelectric layer provided with a portion other than the depression in the piezoelectric layer.
  • the lower piezoelectric layer depression 102 and the piezoelectric layer lower protrusion 101 are simultaneously provided on the lower surface of the piezoelectric layer.
  • the upper surface of the bottom electrode 30 is provided with a depression 100 on the bottom electrode (see FIG. 5D mentioned later), and the depth of the depression 100 on the bottom electrode corresponds to the pressure
  • the heights of the bumps 101 under the electrical layer are the same.
  • the upper surface of the bottom electrode 30 is provided with a protrusion on the bottom electrode.
  • the height of the protrusion on the bottom electrode is the same as that of the piezoelectric layer.
  • the depth of the depression is the same.
  • FIG. 4 is a simulation effect diagram showing the change of the average value of the Q value of the BAW resonator in FIG. 1 and FIG. 2 near the series resonance point, where 301 corresponds to the change of the Q value with the change of the Q value above the top electrode in FIG. 1 .
  • the variation of the width of the recess 603, 302 corresponds to the variation of the Q value with the width of the protrusion under the piezoelectric layer on the lower side of the piezoelectric layer in FIG. 2 .
  • the average value of Q near the series resonance point is significantly improved compared to the structure shown in FIG. 1 .
  • FIG. 3 has a similar technical effect to the structure shown in FIG. 2 .
  • 5A-5H are a series of schematic cross-sectional views illustrating a process flow for fabricating the BAW resonator shown in FIG. 2 according to an exemplary embodiment of the present invention.
  • the manufacturing process of the bulk acoustic wave resonator shown in FIG. 2 is exemplarily described below with reference to FIGS. 5A-5H .
  • a substrate 10 is provided.
  • the cavity is filled with a sacrificial material, and the sacrificial material is ground by CMP (Chemical Mechanical Polishing) method to form a sacrificial layer 21 filling the cavity, which will be referred to later.
  • CMP Chemical Mechanical Polishing
  • an auxiliary layer 301 is provided on the upper surface of the structure shown in FIG. 5B , and is then patterned to form auxiliary recesses 301A at predetermined positions.
  • the bottom electrode metal material is deposited.
  • the auxiliary recess 301A conducts to the upper surface of the bottom electrode metal material to form a shallow bottom electrode recess 100 , and then the deposited bottom electrode material is patterned to form the bottom electrode 30 .
  • the auxiliary layer 301 and the bottom electrode are made of the same material, but the present invention is not limited thereto.
  • the auxiliary layer 301 is made of a different material from that of the bottom electrode 30 .
  • the piezoelectric layer 40 is formed by depositing a piezoelectric material. As shown in FIG. 5E , the lower surface of the piezoelectric layer 40 is formed with a piezoelectric layer lower protrusion 101 protruding into the depression 100 on the bottom electrode. However, after the deposition process, the upper surface of the piezoelectric layer 40 is flat above the position corresponding to the depression 100 on the bottom electrode.
  • an acoustic mismatch structure 60 is formed on the structure shown in FIG. 5E , which includes a recess 603 , a protrusion 602 , and a cantilever or bridge structure 601 .
  • a protective layer 70 is provided on the structure shown in FIG. 5F.
  • the sacrificial layer 21 in the structure shown in FIG. 5G is released to form the cavity 20 , thereby forming the BAW resonator structure shown in FIG. 2 .
  • the present invention proposes a method for manufacturing a bulk acoustic wave resonator.
  • the bulk acoustic wave resonator includes a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer disposed between the bottom electrode and the top electrode.
  • the methods described include:
  • bottom electrode depressions and/or bottom electrode protrusions on the upper surface of bottom electrode 30;
  • the piezoelectric layer 40 is deposited so that the lower surface of the piezoelectric layer is provided with protrusions under the piezoelectric layer corresponding to the depressions on the bottom electrode and/or the lower surface of the piezoelectric layer is provided with protrusions corresponding to the protrusions on the bottom electrode.
  • the piezoelectric layer is recessed, and based on the deposition, the upper surface of the piezoelectric layer 40 is a flat surface at locations corresponding to the protrusions and/or recesses under the piezoelectric layer.
  • the lower surface of the piezoelectric layer is provided with protrusions or depressions under the piezoelectric layer, and the corresponding position of the upper surface of the piezoelectric layer is a flat surface, but this The invention is not limited to this.
  • 8-9 are schematic cross-sectional views of a bulk acoustic wave resonator according to various exemplary embodiments of the present invention, wherein the bottom electrode recess on the upper surface of the bottom electrode conducts to other film layer structures in the resonator.
  • the depressions on the bottom electrode are conducted to the upper surface of the piezoelectric layer 40 , the upper surface of the top electrode 50 , and the upper surface of the protective layer 70 .
  • the depression on the bottom electrode may only be conducted to the upper surface of the piezoelectric layer 40 , or the depression on the bottom electrode may be conducted only to the upper surface of the piezoelectric layer 40 and the upper surface of the top electrode 50 .
  • a depression 604 is also provided on the upper surface of the top electrode 50 .
  • the upper surface of the piezoelectric layer 40 , the upper surface of the top electrode 50 , and the upper surface of the process layer 70 are recessed based on conduction.
  • the depressions on the bottom electrode are conducted to the upper surface of the piezoelectric layer and the upper film layers, but as can be understood, the protrusions on the bottom electrode can also be conducted to the upper surface of the piezoelectric layer and beyond. film layers, these are also within the scope of protection of the present invention.
  • the upper surface of the top electrode is provided with an acoustic impedance structure.
  • the acoustic impedance structure such as the depression 604 shown in FIG. 8 , can also be another protrusion disposed on the upper surface of the top electrode, or a cantilever structure or a bridge structure, etc. disposed on the upper surface of the top electrode, all of which are described herein. within the scope of protection of the invention.
  • the present invention provides a method for manufacturing a bulk acoustic wave resonator, the bulk acoustic wave resonator includes a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer disposed between the bottom electrode and the top electrode, the Methods include:
  • bottom electrode depressions and/or bottom electrode protrusions on the upper surface of the bottom electrode
  • a piezoelectric layer is deposited, so that the lower surface of the piezoelectric layer is provided with a lower protrusion of the piezoelectric layer corresponding to the depression on the bottom electrode, and the upper surface of the piezoelectric layer is provided with a piezoelectric layer corresponding to the lower protrusion of the piezoelectric layer.
  • the depression on the layer based on the deposition, and/or the deposition of the piezoelectric layer, so that the lower surface of the piezoelectric layer is provided with depressions under the piezoelectric layer corresponding to the protrusions on the bottom electrode and the upper surface of the piezoelectric layer is provided with depressions.
  • the depression on the piezoelectric layer corresponds to the protrusion on the piezoelectric layer, based on the deposition.
  • the height of the protrusions or the depth of the depressions may become larger or smaller.
  • the height of the protrusions or the depth of the depressions becomes smaller during the upward conduction of the protrusions or depressions in the film layer structure based on deposition.
  • each numerical range except that it is clearly indicated that it does not include the endpoint value, can be the endpoint value, and can also be the median value of each numerical range, and these are all within the protection scope of the present invention. .
  • upper and lower are relative to the bottom surface of the base of the resonator.
  • the side close to the bottom surface is the lower side, and the side away from the bottom surface is the upper side.
  • the center of the effective area of the resonator (the overlapping area of the piezoelectric layer, the top electrode, the bottom electrode and the acoustic mirror in the thickness direction of the resonator constitutes the effective area) (ie, the center of the effective area).
  • the side or end of a component close to the center of the effective area is the inner or inner end
  • the side or end of the component away from the center of the effective area is the outer or outer end.
  • BAW resonators may be used to form filters or electronic devices.
  • a bulk acoustic wave resonator comprising:
  • a piezoelectric layer arranged between the bottom electrode and the top electrode
  • the lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer and/or a protrusion under the piezoelectric layer, and the upper surface of the piezoelectric layer corresponds to the depression under the piezoelectric layer and/or the protrusion under the piezoelectric layer
  • the location is a flat surface.
  • the thickness of the piezoelectric layer is the flatness of the upper surface of the piezoelectric layer and the lower surface of the piezoelectric layer except for the lower surface of the piezoelectric layer and/or the lower surface of the piezoelectric layer. distance between faces.
  • the lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and a protrusion on the bottom electrode is formed on the upper surface of the bottom electrode, and the height of the protrusion on the bottom electrode is the same as that of the depression under the piezoelectric layer. the same depth; and/or
  • the lower surface of the piezoelectric layer is provided with the lower protrusion of the piezoelectric layer, and the upper surface of the bottom electrode is formed with a depression on the bottom electrode, and the depth of the depression on the bottom electrode is the same as that of the lower protrusion of the piezoelectric layer. same height.
  • the resonator includes an auxiliary layer, and the auxiliary layer is provided with auxiliary protrusions at positions corresponding to the protrusions on the bottom electrode; or
  • the resonator includes an auxiliary layer, and the auxiliary layer is provided with auxiliary recesses on the bottom electrode at positions corresponding to the recesses.
  • a bulk acoustic wave resonator comprising:
  • a piezoelectric layer arranged between the bottom electrode and the top electrode
  • the lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and the upper surface of the piezoelectric layer is provided with a protrusion on the piezoelectric layer at a position corresponding to the depression under the piezoelectric layer;
  • the lower surface of the piezoelectric layer is provided with a lower protrusion of the piezoelectric layer, and the upper surface of the piezoelectric layer is provided with a depression on the piezoelectric layer at a position corresponding to the lower protrusion of the piezoelectric layer.
  • the upper surface of the top electrode is provided with depressions on the top electrode;
  • the upper surface of the top electrode is provided with protrusions on the top electrode.
  • the depth of the recesses on the top electrode is different from the depth of the recesses on the piezoelectric layer;
  • the height of the bumps on the top electrode is different from the height of the bumps on the piezoelectric layer.
  • the resonator also includes a process layer disposed on the upper side of the top electrode;
  • the upper surface of the process layer is provided with a depression on the process layer;
  • the upper surface of the process layer is provided with protrusions on the process layer.
  • the depth of the recess on the process layer is different from the depth of the recess on the top electrode; and/or
  • the height of the bumps on the process layer is different from the height of the bumps on the top electrode.
  • the lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and a protrusion on the bottom electrode is formed on the upper surface of the bottom electrode, and the height of the protrusion on the bottom electrode is the same as that of the depression under the piezoelectric layer. the same depth; and/or
  • the lower surface of the piezoelectric layer is provided with the lower protrusion of the piezoelectric layer, and the upper surface of the bottom electrode is formed with a depression on the bottom electrode, and the depth of the depression on the bottom electrode is the same as that of the lower protrusion of the piezoelectric layer. same height.
  • the resonator includes an auxiliary layer disposed between the bottom electrode and the substrate, and the auxiliary layer includes auxiliary protrusions at positions corresponding to the protrusions on the bottom electrode; and/or
  • the resonator includes an auxiliary layer disposed between the bottom electrode and the substrate, and the auxiliary layer defines auxiliary recesses at positions corresponding to the recesses on the bottom electrode.
  • the height of the auxiliary protrusion is different from the height of the protrusion on the bottom electrode;
  • the depth of the auxiliary recess is different from the depth of the recess on the bottom electrode.
  • a method for manufacturing a bulk acoustic wave resonator comprising:
  • Step 1 forming bottom electrode depressions and/or bottom electrode protrusions on the upper surface of the bottom electrode.
  • Step 2 depositing a piezoelectric layer, so that the lower surface of the piezoelectric layer is provided with lower protrusions on the piezoelectric layer corresponding to the depressions on the bottom electrode and/or the lower surface of the piezoelectric layer is provided with protrusions on the bottom electrode.
  • the corresponding piezoelectric layer is recessed and, based on the deposition, the upper surface of the piezoelectric layer is a flat surface at locations corresponding to the protrusions and/or recesses under the piezoelectric layer.
  • Step 3 Before forming the bottom electrode, an auxiliary layer is provided, and the auxiliary layer is provided with an auxiliary protrusion at the position corresponding to the protrusion on the bottom electrode, or the auxiliary layer is provided with a position corresponding to the depression on the bottom electrode. Auxiliary depression.
  • the height of the auxiliary bump is different from the height of the bump on the bottom electrode
  • the depth of the auxiliary recess is different from the depth of the recess on the bottom electrode.
  • a method for manufacturing a bulk acoustic wave resonator comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer arranged between the bottom electrode and the top electrode, the method comprising:
  • Step 1 forming bottom electrode depressions and/or bottom electrode protrusions on the upper surface of the bottom electrode.
  • a piezoelectric layer is deposited, so that the lower surface of the piezoelectric layer is provided with a lower protrusion of the piezoelectric layer corresponding to the depression on the bottom electrode, and the upper surface of the piezoelectric layer is provided with a piezoelectric layer corresponding to the lower protrusion of the piezoelectric layer.
  • a piezoelectric layer is deposited so that the lower surface of the piezoelectric layer is provided with depressions corresponding to the protrusions on the bottom electrode, and the upper surface of the piezoelectric layer is provided with depressions corresponding to the depressions on the piezoelectric layer. bulge up.
  • the depth of the depressions on the piezoelectric layer is different from the height of the protrusions below the piezoelectric layer;
  • the height of the protrusions above the piezoelectric layer is different from the depth of the depressions below the piezoelectric layer.
  • top electrode depositing a top electrode such that the top electrode is provided with a top electrode depression on its upper surface at a position corresponding to the depression on the piezoelectric layer;
  • the top electrode is deposited so that the upper surface of the top electrode is provided with the protrusions on the top electrode at the positions corresponding to the protrusions on the piezoelectric layer.
  • the resonator also includes a process layer disposed on the upper side of the top electrode,
  • the upper surface of the process layer is provided with a depression on the process layer;
  • the upper surface of the process layer is provided with protrusions on the process layer.
  • Step 5 Set up an auxiliary layer between the bottom electrode and the substrate
  • the auxiliary layer includes auxiliary protrusions at positions corresponding to the protrusions on the bottom electrode; and/or
  • the auxiliary layer defines auxiliary recesses at positions corresponding to the recesses on the bottom electrode.
  • a filter comprising the bulk acoustic wave resonator of any of 1-15.
  • An electronic device comprising the filter according to 24, or the bulk acoustic wave resonator according to any one of 1-15.
  • the electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode. A lower surface of the piezoelectric layer is provided with a piezoelectric layer lower recess and/or a piezoelectric layer lower protrusion, and an upper surface of the piezoelectric layer is a flat surface at a position corresponding to the piezoelectric layer lower recess and/or the piezoelectric layer lower protrusion. The present invention further relates to a filter and an electronic device.

Description

压电层下侧设置凸起和/或凹陷的体声波谐振器、滤波器及电子设备Bulk acoustic wave resonator, filter and electronic device provided with convex and/or concave underside of piezoelectric layer 技术领域technical field
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器及其制造方法、一种具有该谐振器的滤波器以及一种电子设备。Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator and a method for manufacturing the same, a filter having the resonator, and an electronic device.
背景技术Background technique
电子器件作为电子设备的基本元素，已经被广泛应用，其应用范围包括移动电话、汽车、家电设备等。此外，未来即将改变世界的人工智能、物联网、5G通讯等技术仍然需要依靠电子器件作为基础。As the basic elements of electronic equipment, electronic devices have been widely used, and their applications include mobile phones, automobiles, home appliances and so on. In addition, technologies such as artificial intelligence, the Internet of Things, and 5G communications that will change the world in the future still need to rely on electronic devices as their foundation.
薄膜体声波谐振器(Film Bulk Acoustic Resonator，简称FBAR，又称为体声波谐振器，也称BAW)作为压电器件的重要成员正在通信领域发挥着重要作用，特别是FBAR滤波器在射频滤波器领域市场占有份额越来越大，FBAR具有尺寸小、谐振频率高、品质因数高、功率容量大、滚降效应好等优良特性，其滤波器正在逐步取代传统的声表面波(SAW)滤波器和陶瓷滤波器，在无线通信射频领域发挥巨大作用，其高灵敏度的优势也能应用到生物、物理、医学等传感领域。Film Bulk Acoustic Resonator (FBAR, also known as Bulk Acoustic Resonator, also known as BAW) as an important member of piezoelectric devices is playing an important role in the field of communication, especially FBAR filter in radio frequency filter The market share in the field is increasing. FBAR has excellent characteristics such as small size, high resonant frequency, high quality factor, large power capacity, and good roll-off effect. Its filters are gradually replacing traditional surface acoustic wave (SAW) filters And ceramic filters, play a huge role in the field of wireless communication radio frequency, its high sensitivity advantage can also be applied to biological, physical, medical and other sensing fields.
薄膜体声波谐振器的结构主体为由电极-压电薄膜-电极组成的“三明治”结构，即两层金属电极层之间夹一层压电材料。通过在两电极间输入正弦信号，FBAR利用逆压电效应将输入电信号转换为机械谐振，并且再利用压电效应将机械谐振转换为电信号输出。The structural main body of the thin film bulk acoustic wave resonator is a "sandwich" structure composed of an electrode-piezoelectric film-electrode, that is, a piezoelectric material is sandwiched between two metal electrode layers. By inputting a sinusoidal signal between two electrodes, the FBAR uses the inverse piezoelectric effect to convert the input electrical signal into mechanical resonance, and then uses the piezoelectric effect to convert the mechanical resonance into an electrical signal output.
薄膜体声波谐振器主要利用压电薄膜的纵向压电系数产生压电效应，所以其主要工作模式为厚度方向上的纵波模式，即体声波谐振器的声波主要在谐振器的薄膜体内，而且主要的振动方向在纵向。但是由于存在边界，在边界处会存在不垂直于压电膜层的兰姆波，这时横向的兰姆波会从压电膜层的横向漏出，导致声学损失，从而使得谐振器的Q值减小。The film bulk acoustic wave resonator mainly uses the longitudinal piezoelectric coefficient of the piezoelectric film to generate the piezoelectric effect, so its main working mode is the longitudinal wave mode in the thickness direction, that is, the sound wave of the bulk acoustic wave resonator is mainly in the film body of the resonator, and the main working mode is the longitudinal wave mode in the thickness direction. The vibration direction is in the longitudinal direction. However, due to the existence of a boundary, there will be Lamb waves that are not perpendicular to the piezoelectric film layer at the boundary. At this time, the lateral Lamb wave will leak out from the lateral direction of the piezoelectric film layer, resulting in acoustic loss, thus making the Q value of the resonator. decrease.
为了防止或减少横向的兰姆波泄露，已有的技术在谐振器的有效区域的边缘设置凸起结构、凹陷结构以及桥翼结构中的至少一种，如图1所示。但是，在通过在谐振器的有效区域的边缘设置凸起结构或凹陷结构来提升谐振器的Q值时，由于制备工艺的限制，难以在压电层下侧制备凹陷结构或凸起结构，同时保持谐振器的有效区域内的压电层的平整。In order to prevent or reduce lateral Lamb wave leakage, in the prior art, at least one of a convex structure, a concave structure and a bridge wing structure is arranged at the edge of the effective area of the resonator, as shown in FIG. 1 . However, when the Q value of the resonator is improved by arranging a convex structure or a concave structure at the edge of the effective area of the resonator, it is difficult to prepare a concave structure or a convex structure on the lower side of the piezoelectric layer due to the limitation of the manufacturing process. Keep the piezoelectric layer flat within the active area of the resonator.
发明内容SUMMARY OF THE INVENTION
为缓解或解决现有技术中的上述问题的至少一个方面，提出本发明。The present invention is proposed to alleviate or solve at least one aspect of the above-mentioned problems in the prior art.
根据本发明的实施例的一个方面，提出了一种体声波谐振器，包括基底、声学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层。压电层的下表面设置有压电层下凹陷和/或压电层下凸起，压电层的上表面在与所述压电层下凹陷和/或压电层下凸起对应的位置为平坦表面。According to an aspect of an embodiment of the present invention, a bulk acoustic wave resonator is proposed, including a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer disposed between the bottom electrode and the top electrode. The lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer and/or a protrusion under the piezoelectric layer, and the upper surface of the piezoelectric layer is at a position corresponding to the depression under the piezoelectric layer and/or the protrusion under the piezoelectric layer for a flat surface.
根据本发明的实施例的另一方面，提出了一种体声波谐振器，包括基底、声学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层。压电层的下表面设置有压电层下凹陷，压电层的上表面在与所述压电层下凹陷对应的位置设置有压电层上凸起；和/或压电层的下表面设置有压电层下凸起，压电层的上表面在与所述压电层下凸起对应的位置设置有压电层上凹陷。According to another aspect of an embodiment of the present invention, a bulk acoustic wave resonator is proposed, including a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer disposed between the bottom electrode and the top electrode. The lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and the upper surface of the piezoelectric layer is provided with an upper protrusion on the piezoelectric layer at a position corresponding to the depression in the piezoelectric layer; and/or the lower surface of the piezoelectric layer A lower protrusion of the piezoelectric layer is provided, and an upper surface of the piezoelectric layer is provided with a depression on the piezoelectric layer at a position corresponding to the lower protrusion of the piezoelectric layer.
根据本发明的实施例的另一方面，提出了一种体声波谐振器的制造方法，所述体声波谐振器包括基底、声学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层，所述方法包括：在底电极上表面形成底电极上凹陷和/或底电极上凸起；和沉积压电层，使得压电层下表面设置有与所述底电极上凹陷对应的压电层下凸起和/或使得压电层下表面设置有与所述底电极上凸起对应的压电层下凹陷，且基于沉积，所述压电层的上表面在与压电层下凸起和/或压电层下凹陷对应的位置为平坦面。According to another aspect of an embodiment of the present invention, a method for manufacturing a bulk acoustic wave resonator is provided, the bulk acoustic wave resonator includes a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a method disposed between the bottom electrode and the top electrode The piezoelectric layer, the method includes: forming a bottom electrode depression and/or a bottom electrode protrusion on the upper surface of the bottom electrode; and depositing the piezoelectric layer, so that the lower surface of the piezoelectric layer is provided with the bottom electrode depression. Corresponding lower piezoelectric layer protrusions and/or such that the lower surface of the piezoelectric layer is provided with piezoelectric layer lower depressions corresponding to the protrusions on the bottom electrode, and based on deposition, the upper surface of the piezoelectric layer is at the same time as the voltage. The position corresponding to the protrusion under the electric layer and/or the depression under the piezoelectric layer is a flat surface.
根据本发明的实施例的再一方面，提出了一种体声波谐振器的制造方法，所述体声波谐振器包括基底、声学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层，所述方法包括：在底电极上表面形成底电极上凹陷和/或底电极上凸起；和沉积压电层，使得压电层下表面设置有与所述底电极上凹陷对应的压电层下凸起以及使得压电层上表面设置有与所述压电层下凸起对应的压电层上凹陷，和/或沉积压电层，使得压电层下表面设置有与所述底电极上凸起对应的压电层下凹陷以及使得压电层上表面设置有与所述压电层下凹陷对应的压电层上凸起。According to yet another aspect of the embodiments of the present invention, a method for manufacturing a bulk acoustic wave resonator is provided, the bulk acoustic wave resonator includes a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a method disposed between the bottom electrode and the top electrode The piezoelectric layer, the method includes: forming a bottom electrode depression and/or a bottom electrode protrusion on the upper surface of the bottom electrode; and depositing the piezoelectric layer, so that the lower surface of the piezoelectric layer is provided with the bottom electrode depression. Corresponding protrusions under the piezoelectric layer and the upper surface of the piezoelectric layer are provided with depressions on the piezoelectric layer corresponding to the protrusions under the piezoelectric layer, and/or the piezoelectric layer is deposited so that the lower surface of the piezoelectric layer is provided with The lower piezoelectric layer is recessed corresponding to the protrusion on the bottom electrode, and the upper surface of the piezoelectric layer is provided with the upper piezoelectric layer protrusion corresponding to the lower recess of the piezoelectric layer.
本发明的实施例还涉及一种滤波器，包括上述的体声波谐振器。Embodiments of the present invention also relate to a filter comprising the above-mentioned bulk acoustic wave resonator.
本发明的实施例也涉及一种电子设备，包括上述的滤波器或者上述的谐振器。Embodiments of the present invention also relate to an electronic device comprising the above-mentioned filter or the above-mentioned resonator.
附图说明Description of drawings
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：These and other features and advantages of the various disclosed embodiments of the present invention may be better understood by the following description and accompanying drawings, in which like reference numerals refer to like parts throughout, wherein:
图1为已知的体声波谐振器的截面示意图；1 is a schematic cross-sectional view of a known bulk acoustic wave resonator;
图2为根据本发明的一个示例性实施例的体声波谐振器的截面示意图；2 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
图3为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图；3 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention;
图4为仿真效果图，示出了图1和图2中的体声波谐振器在串联谐振点附近的Q值的平均值的变化，其中301对应于Q值随图1中的顶电极上方的凹陷的宽度的变化，302对应于Q值随图2中的压电层下侧的压电层下凸起的宽度的变化；FIG. 4 is a simulation effect diagram showing the change of the average value of the Q value of the BAW resonator in FIG. 1 and FIG. 2 near the series resonance point, where 301 corresponds to the change of the Q value with the change of the Q value above the top electrode in FIG. 1 . The variation of the width of the depression, 302 corresponds to the variation of the Q value with the width of the protrusion under the piezoelectric layer on the lower side of the piezoelectric layer in FIG. 2;
图5A-5H为根据本发明的一个示例性实施例的示例性示出制备图2所示的体声波谐振器的工艺流程的一系列截面示意图；5A-5H are a series of schematic cross-sectional views illustrating a process flow for fabricating the BAW resonator shown in FIG. 2 according to an exemplary embodiment of the present invention;
图6为根据本发明的一个示例性实施例的体声波谐振器的截面示意图，其中声学镜为布拉格反射层；6 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the acoustic mirror is a Bragg reflector;
图7为根据本发明的还一个示例性实施例的体声波谐振器的截面示意图，其中示出了用于在底电极上表面形成底电极上凹陷的辅助层；以及7 is a schematic cross-sectional view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present invention, wherein an auxiliary layer for forming a recess on the bottom electrode on the upper surface of the bottom electrode is shown; and
图8-9为根据本发明的不同示例性实施例的体声波谐振器的截面示意图，其中，底电极上表面的底电极上凹陷传导到谐振器中的其他膜层结构。8-9 are schematic cross-sectional views of a bulk acoustic wave resonator according to various exemplary embodiments of the present invention, wherein the bottom electrode recess on the upper surface of the bottom electrode conducts to other film layer structures in the resonator.
具体实施方式Detailed ways
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。发明的一部分实施例，而并不是全部的实施例。基于本发明中的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions of the present invention will be further described in detail below through embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals refer to the same or similar parts. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, and should not be construed as a limitation of the present invention. Some, but not all, embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art fall within the protection scope of the present invention.
在向设置有凹陷或凸起的表面沉积粒子的过程中，在沉积粒子被该表 面捕获后，更容易在侧壁、凹陷底部等低势能点附着，更难在凸起表面附着，因此凹陷内部沉积速率更快，凸起表面沉积速率更慢。所以，在沉积一定厚度后，在沉积层的上表面的对应的凹陷/凸起的深度/高度会减小；继续沉积一定厚度后，沉积层的上表面的对应凹陷和凸起会消失，最终可以在沉积层的上表面形成一个近乎纯平的表面。本发明基于以上发现而提出。In the process of depositing particles on a surface provided with depressions or protrusions, after the deposited particles are captured by the surface, it is easier to attach to low-potential energy points such as the sidewalls and the bottom of depressions, and it is more difficult to attach to the surface of the depressions, so the inside of the depressions The deposition rate is faster and the raised surface deposition rate is slower. Therefore, after a certain thickness is deposited, the depth/height of the corresponding depressions/protrusions on the upper surface of the deposition layer will decrease; after continuing to deposit a certain thickness, the corresponding depressions and protrusions on the upper surface of the deposition layer will disappear, and finally A nearly flat surface can be formed on the top surface of the deposited layer. The present invention has been made based on the above findings.
本发明中的附图标记说明如下：The reference numerals in the present invention are explained as follows:
10：基底，可选材料为单晶硅、氮化镓、砷化镓、蓝宝石、石英、碳化硅、金刚石等。10: Substrate, optional materials are single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.
20：声学镜，可为空腔，例如图2。在可选的实施例中，作为空腔型声学镜的等效形式，也可采用布拉格反射层形式的声学镜，如图6所示，布拉格反射层形式的声学镜包括交替布置的布拉格反射层201和202。20: Acoustic mirror, which can be a cavity, such as Fig. 2. In an optional embodiment, as an equivalent form of a cavity-type acoustic mirror, an acoustic mirror in the form of a Bragg reflection layer can also be used. As shown in FIG. 6 , the acoustic mirror in the form of a Bragg reflection layer includes Bragg reflection layers arranged alternately. 201 and 202.
21：牺牲层，材料可以为二氧化硅、掺杂二氧化硅等。21: Sacrificial layer, the material can be silicon dioxide, doped silicon dioxide, etc.
30：底电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。30: Bottom electrode, the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite of the above metals or their alloys.
40：压电层，可以为单晶压电材料，可选的，如：单晶氮化铝、单晶氮化镓、单晶铌酸锂、单晶锆钛酸铅(PZT)、单晶铌酸钾、单晶石英薄膜、或者单晶钽酸锂等材料，也可以为多晶压电材料(与单晶相对应，非单晶材料)，可选的，如多晶氮化铝、氧化锌、PZT等，还可是包含上述材料的一定原子比的稀土元素掺杂材料，例如可以是掺杂氮化铝，掺杂氮化铝至少含一种稀土元素，如钪(Sc)、钇(Y)、镁(Mg)、钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。40: Piezoelectric layer, which can be a single crystal piezoelectric material, optional, such as: single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate (PZT), single crystal Potassium niobate, single crystal quartz film, or single crystal lithium tantalate and other materials can also be polycrystalline piezoelectric materials (corresponding to single crystal, non-single crystal materials), optional, such as polycrystalline aluminum nitride, Zinc oxide, PZT, etc., can also be a rare earth element doped material containing a certain atomic ratio of the above materials, for example, can be doped aluminum nitride, and doped aluminum nitride contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu) and the like.
50：顶电极，其材料可与底电极相同，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。顶电极和底电极材料一般相同，但也可以不同。50: The top electrode, the material of which can be the same as the bottom electrode, can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys. The top and bottom electrode materials are generally the same, but can also be different.
60：声学不匹配结构，如后面提及的，也可以不设置声学不匹配结构。60: Acoustic mismatch structure, as mentioned later, the acoustic mismatch structure may not be set.
601：桥结构和/或悬翼结构。601: Bridge structure and/or cantilever structure.
602：凸起结构或凸起，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。602: Protrusion structure or protrusion, the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
603：凹陷结构或凹陷。603: Depressed structures or depressions.
70：保护层或工艺层，其材料一般为介质材料，例如可以为氮化铝、二氧化硅、氮化硅等。如能够理解的，也可以不设置保护层或工艺层70。70: A protective layer or a process layer, the material of which is generally a dielectric material, such as aluminum nitride, silicon dioxide, silicon nitride, and the like. As can be understood, the protective layer or process layer 70 may also not be provided.
100：底电极上凹陷。100: depression on the bottom electrode.
101：压电层下凸起。101: Bulge under the piezoelectric layer.
102：压电层下凹陷。102: The piezoelectric layer is recessed.
301：辅助层，其可以是种子层，也可以是与底电极的材料相同的材料层。301 : an auxiliary layer, which may be a seed layer or a material layer of the same material as that of the bottom electrode.
301A：辅助凹陷，其由辅助层301限定。301A: Auxiliary recess, which is defined by the auxiliary layer 301 .
图2为根据本发明的一个示例性实施例的体声波谐振器的截面示意图。如图2所示，体声波谐振器包括基底10、声学镜20、底电极30、顶电极50和设置在底电极30与顶电极50之间的压电层40，其中声学镜20为空腔形式。压电层40的下表面设置有压电层下凸起101，压电层的上表面在与压电层下凸起101对应的位置为平坦表面。2 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. As shown in FIG. 2 , the BAW resonator includes a substrate 10 , an acoustic mirror 20 , a bottom electrode 30 , a top electrode 50 and a piezoelectric layer 40 disposed between the bottom electrode 30 and the top electrode 50 , wherein the acoustic mirror 20 is a cavity form. The lower surface of the piezoelectric layer 40 is provided with a lower piezoelectric layer protrusion 101 , and the upper surface of the piezoelectric layer is a flat surface at a position corresponding to the piezoelectric layer lower protrusion 101 .
在图2所示的实施例中，压电层下凸起101的高度不大于500nm，该高度有利于将压电层40的上表面在沉积过程中形成为平坦面。In the embodiment shown in FIG. 2 , the height of the protrusions 101 under the piezoelectric layer is not greater than 500 nm, which is favorable for forming the upper surface of the piezoelectric layer 40 into a flat surface during the deposition process.
在图2所示的实施例中，顶电极50的上侧还设置有声学不匹配结构60，其包括桥结构或悬翼结构601、凸起602和凹陷603。但是，也可以不设置声学不匹配结构60，声学不匹配结构60也可以仅仅设置桥结构或悬翼结构601、凸起602、凹陷603中的一种或两种。In the embodiment shown in FIG. 2 , the upper side of the top electrode 50 is further provided with an acoustic mismatch structure 60 , which includes a bridge structure or a cantilever structure 601 , a protrusion 602 and a recess 603 . However, the acoustic mismatch structure 60 may not be provided, and the acoustic mismatch structure 60 may only be provided with one or two of the bridge structure or the cantilever structure 601 , the protrusion 602 , and the recess 603 .
可选的，在图2所示的实施例中，压电层下凸起101的高度与压电层40的厚度的比值不大于1/5，该比值范围有利于将压电层40的上表面在沉积过程中形成为平坦面。这里，压电层40的厚度为压电层的上表面与压电层的下表面的设置有压电层下凸起之外的部分的平坦面之间的距离。Optionally, in the embodiment shown in FIG. 2 , the ratio of the height of the protrusions 101 under the piezoelectric layer to the thickness of the piezoelectric layer 40 is not greater than 1/5. The surface is formed as a flat surface during deposition. Here, the thickness of the piezoelectric layer 40 is the distance between the upper surface of the piezoelectric layer and the flat surface of the lower surface of the piezoelectric layer on which the portion other than the lower protrusion of the piezoelectric layer is provided.
如图3所示，在可选的实施例中，图2中的压电层下凸起101也可以被压电层下凹陷102所替代。此时，在一个实施例中，压电层下凹陷102的深度不大于500nm，该深度有利于将压电层40的上表面在沉积过程中形成为平坦面，或者压电层下凹陷102的深度与压电层的厚度的比值不大于1/5，该比值范围有利于将压电层40的上表面在沉积过程中形成为平坦面。这里，压电层的厚度为压电层的上表面与压电层的下表面的设置有压电层下凹陷之外的部分的平坦面之间的距离。As shown in FIG. 3 , in an optional embodiment, the protrusions 101 under the piezoelectric layer in FIG. 2 can also be replaced by depressions 102 under the piezoelectric layer. At this time, in one embodiment, the depth of the depression 102 under the piezoelectric layer is not greater than 500 nm, which is favorable for forming the upper surface of the piezoelectric layer 40 into a flat surface during the deposition process, or the depth of the depression 102 under the piezoelectric layer is not greater than 500 nm. The ratio of the depth to the thickness of the piezoelectric layer is not greater than 1/5, and this ratio range is favorable for forming the upper surface of the piezoelectric layer 40 as a flat surface during the deposition process. Here, the thickness of the piezoelectric layer is the distance between the upper surface of the piezoelectric layer and the flat surface of the lower surface of the piezoelectric layer provided with a portion other than the depression in the piezoelectric layer.
虽然没有示出，在可选的实施例中，在压电层的下表面同时设置压电 层下凹陷102和压电层下凸起101。Although not shown, in an alternative embodiment, the lower piezoelectric layer depression 102 and the piezoelectric layer lower protrusion 101 are simultaneously provided on the lower surface of the piezoelectric layer.
如图2所示，在压电层下凸起101对应的位置，底电极30的上表面设置有底电极上凹陷100(参见后面提及的图5D)，底电极上凹陷100的深度与压电层下凸起101的高度相同。As shown in FIG. 2 , at the position corresponding to the lower protrusion 101 of the piezoelectric layer, the upper surface of the bottom electrode 30 is provided with a depression 100 on the bottom electrode (see FIG. 5D mentioned later), and the depth of the depression 100 on the bottom electrode corresponds to the pressure The heights of the bumps 101 under the electrical layer are the same.
虽然没有示出，在压电层的下侧设置压电层下凹陷的情况下，底电极30的上表面设置有底电极上凸起，此时，底电极上凸起的高度与压电层下凹陷的深度相同。Although not shown, in the case where the lower side of the piezoelectric layer is provided with a depression under the piezoelectric layer, the upper surface of the bottom electrode 30 is provided with a protrusion on the bottom electrode. At this time, the height of the protrusion on the bottom electrode is the same as that of the piezoelectric layer. The depth of the depression is the same.
图4为仿真效果图，示出了图1和图2中的体声波谐振器在串联谐振点附近的Q值的平均值的变化，其中301对应于Q值随图1中的顶电极上方的凹陷603的宽度的变化，302对应于Q值随图2中的压电层下侧的压电层下凸起的宽度的变化。如图4所示，对于图2所示的结构，其串联谐振点附近的Q的平均值相对于图1所示结构有明显的提升。FIG. 4 is a simulation effect diagram showing the change of the average value of the Q value of the BAW resonator in FIG. 1 and FIG. 2 near the series resonance point, where 301 corresponds to the change of the Q value with the change of the Q value above the top electrode in FIG. 1 . The variation of the width of the recess 603, 302 corresponds to the variation of the Q value with the width of the protrusion under the piezoelectric layer on the lower side of the piezoelectric layer in FIG. 2 . As shown in FIG. 4 , for the structure shown in FIG. 2 , the average value of Q near the series resonance point is significantly improved compared to the structure shown in FIG. 1 .
图3所示的结构具有与图2所示结构相似的技术效果。The structure shown in FIG. 3 has a similar technical effect to the structure shown in FIG. 2 .
图5A-5H为根据本发明的一个示例性实施例的示例性示出制备图2所示的体声波谐振器的工艺流程的一系列截面示意图。下面结合图5A-5H示例性说明图2所示的体声波谐振器的制造过程。5A-5H are a series of schematic cross-sectional views illustrating a process flow for fabricating the BAW resonator shown in FIG. 2 according to an exemplary embodiment of the present invention. The manufacturing process of the bulk acoustic wave resonator shown in FIG. 2 is exemplarily described below with reference to FIGS. 5A-5H .
如图5A所示，提供基底10。As shown in FIG. 5A, a substrate 10 is provided.
如图5B所示，在基底10的上表面形成空腔后，对空腔填充牺牲材料，利用CMP(化学机械研磨)法将牺牲材料磨平而形成填充该空腔的牺牲层21，后面参照图5H提及的，牺牲层21释放后，形成声学镜空腔20。As shown in FIG. 5B , after a cavity is formed on the upper surface of the substrate 10 , the cavity is filled with a sacrificial material, and the sacrificial material is ground by CMP (Chemical Mechanical Polishing) method to form a sacrificial layer 21 filling the cavity, which will be referred to later. As mentioned in FIG. 5H , after the sacrificial layer 21 is released, the acoustic mirror cavity 20 is formed.
如图5C所示，在图5B所示结构的上表面设置辅助层301，接着对其图形化而在预定位置形成辅助凹陷301A。As shown in FIG. 5C , an auxiliary layer 301 is provided on the upper surface of the structure shown in FIG. 5B , and is then patterned to form auxiliary recesses 301A at predetermined positions.
如图5D所示，沉积底电极金属材料，此时辅助凹陷301A传导到底电极金属材料的上表面而形成较浅的底电极上凹陷100，接着对沉积底电极材料图形化以形成底电极30。As shown in FIG. 5D , the bottom electrode metal material is deposited. At this time, the auxiliary recess 301A conducts to the upper surface of the bottom electrode metal material to form a shallow bottom electrode recess 100 , and then the deposited bottom electrode material is patterned to form the bottom electrode 30 .
在图5D所示的步骤中，辅助层301与底电极材料为相同材料，但是本发明不限于此。例如如图7所示，辅助层301为与底电极30不同的材料。In the step shown in FIG. 5D , the auxiliary layer 301 and the bottom electrode are made of the same material, but the present invention is not limited thereto. For example, as shown in FIG. 7 , the auxiliary layer 301 is made of a different material from that of the bottom electrode 30 .
如图5E所示，沉积压电材料而形成压电层40，如图5E所示，压电层40的下表面形成有凸入到底电极上凹陷100内的压电层下凸起101。不过，经过沉积过程之后，压电层40的上表面在底电极上凹陷100对应的 位置上方为平坦面。As shown in FIG. 5E , the piezoelectric layer 40 is formed by depositing a piezoelectric material. As shown in FIG. 5E , the lower surface of the piezoelectric layer 40 is formed with a piezoelectric layer lower protrusion 101 protruding into the depression 100 on the bottom electrode. However, after the deposition process, the upper surface of the piezoelectric layer 40 is flat above the position corresponding to the depression 100 on the bottom electrode.
如图5F所示，在图5E所示结构上形成声学不匹配结构60，其包括凹陷603、凸起602和悬翼或桥结构601。As shown in FIG. 5F , an acoustic mismatch structure 60 is formed on the structure shown in FIG. 5E , which includes a recess 603 , a protrusion 602 , and a cantilever or bridge structure 601 .
如图5G所示，在图5F所示的结构上设置保护层70。As shown in FIG. 5G, a protective layer 70 is provided on the structure shown in FIG. 5F.
如图5H所示，释放图5G所示结构中的牺牲层21以形成空腔20，从而形成图2所示的体声波谐振器结构。As shown in FIG. 5H , the sacrificial layer 21 in the structure shown in FIG. 5G is released to form the cavity 20 , thereby forming the BAW resonator structure shown in FIG. 2 .
相应的，本发明提出了一种体声波谐振器的制造方法，所述体声波谐振器包括基底、声学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层，所述方法包括：Correspondingly, the present invention proposes a method for manufacturing a bulk acoustic wave resonator. The bulk acoustic wave resonator includes a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer disposed between the bottom electrode and the top electrode. The methods described include:
在底电极30上表面形成底电极上凹陷和/或底电极上凸起；和forming bottom electrode depressions and/or bottom electrode protrusions on the upper surface of bottom electrode 30; and
沉积压电层40，使得压电层下表面设置有与所述底电极上凹陷对应的压电层下凸起和/或使得压电层下表面设置有与所述底电极上凸起对应的压电层下凹陷，且基于沉积，所述压电层40的上表面在与压电层下凸起和/或压电层下凹陷对应的位置为平坦面。The piezoelectric layer 40 is deposited so that the lower surface of the piezoelectric layer is provided with protrusions under the piezoelectric layer corresponding to the depressions on the bottom electrode and/or the lower surface of the piezoelectric layer is provided with protrusions corresponding to the protrusions on the bottom electrode. The piezoelectric layer is recessed, and based on the deposition, the upper surface of the piezoelectric layer 40 is a flat surface at locations corresponding to the protrusions and/or recesses under the piezoelectric layer.
在图2-图5H所示的实施例中，压电层的下表面设置有压电层下凸起或压电层下凹陷，而压电层的上表面的对应位置为平坦面，但是本发明不限于此。图8-9为根据本发明的不同示例性实施例的体声波谐振器的截面示意图，其中，底电极上表面的底电极上凹陷传导到谐振器中的其他膜层结构。In the embodiment shown in FIGS. 2 to 5H , the lower surface of the piezoelectric layer is provided with protrusions or depressions under the piezoelectric layer, and the corresponding position of the upper surface of the piezoelectric layer is a flat surface, but this The invention is not limited to this. 8-9 are schematic cross-sectional views of a bulk acoustic wave resonator according to various exemplary embodiments of the present invention, wherein the bottom electrode recess on the upper surface of the bottom electrode conducts to other film layer structures in the resonator.
在图8-9中，底电极上凹陷传导到了压电层40上表面、顶电极50上表面、保护层70上表面。在可选的实施例中，底电极上凹陷可以仅传导到了压电层40上表面，或者底电极上凹陷仅传导到了压电层40上表面、顶电极50上表面。In FIGS. 8-9 , the depressions on the bottom electrode are conducted to the upper surface of the piezoelectric layer 40 , the upper surface of the top electrode 50 , and the upper surface of the protective layer 70 . In an optional embodiment, the depression on the bottom electrode may only be conducted to the upper surface of the piezoelectric layer 40 , or the depression on the bottom electrode may be conducted only to the upper surface of the piezoelectric layer 40 and the upper surface of the top electrode 50 .
在图8中，在顶电极50上表面，除了传导而形成的凹陷603之外，还另外设置有凹陷604。In FIG. 8 , on the upper surface of the top electrode 50 , in addition to the depression 603 formed by conduction, a depression 604 is also provided.
在图9中，压电层40的上表面、顶电极50的上表面、工艺层70的上表面基于传导而形成凹陷。图8和图9中，以底电极上凹陷传导到压电层上表面以及更上的膜层，但是如能够理解的，底电极上凸起也可以传导到压电层上表面以及更上的膜层，这些也在本发明的保护范围之内。In FIG. 9 , the upper surface of the piezoelectric layer 40 , the upper surface of the top electrode 50 , and the upper surface of the process layer 70 are recessed based on conduction. In FIGS. 8 and 9 , the depressions on the bottom electrode are conducted to the upper surface of the piezoelectric layer and the upper film layers, but as can be understood, the protrusions on the bottom electrode can also be conducted to the upper surface of the piezoelectric layer and beyond. film layers, these are also within the scope of protection of the present invention.
在本发明的一个实施例中，顶电极的上表面设置有声学阻抗结构。声学阻抗结构例如如图8所示的凹陷604，还可以为设置在顶电极上表面的 另外的凸起，或者是设置在顶电极的上表面的悬翼结构或桥结构等，这些均在本发明的保护范围之内。In one embodiment of the present invention, the upper surface of the top electrode is provided with an acoustic impedance structure. The acoustic impedance structure, such as the depression 604 shown in FIG. 8 , can also be another protrusion disposed on the upper surface of the top electrode, or a cantilever structure or a bridge structure, etc. disposed on the upper surface of the top electrode, all of which are described herein. within the scope of protection of the invention.
对于图8和图9所示的结构，也可以采用类似于图5A-5H的步骤制造，不过在制造过程中，控制底电极上凹陷的深度和/或底电极上凸起的高度，和/或控制后续沉积的膜层的厚度，来控制底电极上凹陷和底电极上凸起的向上传导情况。如此，本发明提出了一种体声波谐振器的制造方法，所述体声波谐振器包括基底、声学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层，所述方法包括：For the structures shown in Figures 8 and 9, steps similar to those shown in Figures 5A-5H can also be used, but the depth of the recess on the bottom electrode and/or the height of the protrusion on the bottom electrode is controlled during the manufacturing process, and/ Or control the thickness of the subsequently deposited film layer to control the upward conduction of the depression on the bottom electrode and the protrusion on the bottom electrode. Thus, the present invention provides a method for manufacturing a bulk acoustic wave resonator, the bulk acoustic wave resonator includes a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer disposed between the bottom electrode and the top electrode, the Methods include:
在底电极上表面形成底电极上凹陷和/或底电极上凸起；和forming bottom electrode depressions and/or bottom electrode protrusions on the upper surface of the bottom electrode; and
沉积压电层，使得压电层下表面设置有与所述底电极上凹陷对应的压电层下凸起以及使得压电层上表面设置有与所述压电层下凸起对应的压电层上凹陷，基于所述沉积，和/或沉积压电层，使得压电层下表面设置有与所述底电极上凸起对应的压电层下凹陷以及使得压电层上表面设置有与所述压电层下凹陷对应的压电层上凸起，基于所述沉积。A piezoelectric layer is deposited, so that the lower surface of the piezoelectric layer is provided with a lower protrusion of the piezoelectric layer corresponding to the depression on the bottom electrode, and the upper surface of the piezoelectric layer is provided with a piezoelectric layer corresponding to the lower protrusion of the piezoelectric layer. The depression on the layer, based on the deposition, and/or the deposition of the piezoelectric layer, so that the lower surface of the piezoelectric layer is provided with depressions under the piezoelectric layer corresponding to the protrusions on the bottom electrode and the upper surface of the piezoelectric layer is provided with depressions. The depression on the piezoelectric layer corresponds to the protrusion on the piezoelectric layer, based on the deposition.
在本发明中，在凸起或凹陷在膜层结构中基于沉积而向上传导的过程中，凸起的高度或凹陷的深度可以变大，也可以变小。在可选的实施例中，在凸起或凹陷在膜层结构中基于沉积而向上传导的过程中，凸起的高度或凹陷的深度变小。In the present invention, in the process of upward conduction of the protrusions or depressions in the film layer structure based on deposition, the height of the protrusions or the depth of the depressions may become larger or smaller. In an alternative embodiment, the height of the protrusions or the depth of the depressions becomes smaller during the upward conduction of the protrusions or depressions in the film layer structure based on deposition.
需要指出的是，在本发明中，各个数值范围，除了明确指出不包含端点值之外，除了可以为端点值，还可以为各个数值范围的中值，这些均在本发明的保护范围之内。It should be pointed out that, in the present invention, each numerical range, except that it is clearly indicated that it does not include the endpoint value, can be the endpoint value, and can also be the median value of each numerical range, and these are all within the protection scope of the present invention. .
在本发明中，上和下是相对于谐振器的基底的底面而言的，对于一个部件，其靠近该底面的一侧为下侧，远离该底面的一侧为上侧。In the present invention, upper and lower are relative to the bottom surface of the base of the resonator. For a component, the side close to the bottom surface is the lower side, and the side away from the bottom surface is the upper side.
在本发明中，内和外是相对于谐振器的有效区域(压电层、顶电极、底电极和声学镜在谐振器的厚度方向上的重叠区域构成有效区域)的中心(即有效区域中心)在横向方向或者径向方向上而言的，一个部件的靠近有效区域中心的一侧或一端为内侧或内端，而该部件的远离有效区域中心的一侧或一端为外侧或外端。对于一个参照位置而言，位于该位置的内侧表示在横向方向或径向方向上处于该位置与有效区域中心之间，位于该位置的外侧表示在横向方向或径向方向上比该位置更远离有效区域中心。In the present invention, inside and outside are relative to the center of the effective area of the resonator (the overlapping area of the piezoelectric layer, the top electrode, the bottom electrode and the acoustic mirror in the thickness direction of the resonator constitutes the effective area) (ie, the center of the effective area). ) in the transverse or radial direction, the side or end of a component close to the center of the effective area is the inner or inner end, and the side or end of the component away from the center of the effective area is the outer or outer end. For a reference position, being located inside the position means being between the position and the center of the active area in the lateral or radial direction, and being located outside of the position means being farther from the position in the lateral or radial direction than the position Effective regional center.
如本领域技术人员能够理解的，根据本发明的体声波谐振器可以用于 形成滤波器或电子设备。As can be appreciated by those skilled in the art, BAW resonators according to the present invention may be used to form filters or electronic devices.
基于以上，本发明提出了如下技术方案：Based on the above, the present invention proposes the following technical solutions:
1、一种体声波谐振器，包括：1. A bulk acoustic wave resonator, comprising:
基底；base;
声学镜；acoustic mirror;
底电极；bottom electrode;
顶电极；和top electrode; and
压电层，设置在底电极与顶电极之间，a piezoelectric layer, arranged between the bottom electrode and the top electrode,
其中，压电层的下表面设置有压电层下凹陷和/或压电层下凸起，压电层的上表面在与所述压电层下凹陷和/或压电层下凸起对应的位置为平坦表面。Wherein, the lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer and/or a protrusion under the piezoelectric layer, and the upper surface of the piezoelectric layer corresponds to the depression under the piezoelectric layer and/or the protrusion under the piezoelectric layer The location is a flat surface.
2、根据1所述的谐振器，其中，所述压电层下凹陷的深度和/或所述压电层下凸起的高度不大于500nm。2. The resonator according to 1, wherein the depth of the depression under the piezoelectric layer and/or the height of the protrusion under the piezoelectric layer is not greater than 500 nm.
3、根据1所述的谐振器，其中，所述压电层下凹陷的深度与压电层的厚度的比值和/或所述压电层下凸起的高度与压电层的厚度的比值不大于1/5，所述压电层的厚度为压电层的上表面与压电层的下表面的设置有压电层下凹陷和/或压电层下凸起之外的部分的平坦面之间的距离。3. The resonator according to 1, wherein the ratio of the depth of the depression under the piezoelectric layer to the thickness of the piezoelectric layer and/or the ratio of the height of the protrusion under the piezoelectric layer to the thickness of the piezoelectric layer Not more than 1/5, the thickness of the piezoelectric layer is the flatness of the upper surface of the piezoelectric layer and the lower surface of the piezoelectric layer except for the lower surface of the piezoelectric layer and/or the lower surface of the piezoelectric layer. distance between faces.
4、根据1所述的谐振器，其中：4. The resonator according to 1, wherein:
压电层的下表面设置有所述压电层下凹陷，且所述底电极的上表面形成有底电极上凸起，所述底电极上凸起的高度与所述压电层下凹陷的深度相同；和/或The lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and a protrusion on the bottom electrode is formed on the upper surface of the bottom electrode, and the height of the protrusion on the bottom electrode is the same as that of the depression under the piezoelectric layer. the same depth; and/or
压电层的下表面设置有所述压电层下凸起，且所述底电极的上表面形成有底电极上凹陷，所述底电极上凹陷的深度与所述压电层下凸起的高度相同。The lower surface of the piezoelectric layer is provided with the lower protrusion of the piezoelectric layer, and the upper surface of the bottom electrode is formed with a depression on the bottom electrode, and the depth of the depression on the bottom electrode is the same as that of the lower protrusion of the piezoelectric layer. same height.
5、根据4所述的谐振器，其中：5. The resonator according to 4, wherein:
所述谐振器包括辅助层，所述辅助层在所述底电极上凸起对应的位置设置有辅助凸起；或者The resonator includes an auxiliary layer, and the auxiliary layer is provided with auxiliary protrusions at positions corresponding to the protrusions on the bottom electrode; or
所述谐振器包括辅助层，所述辅助层在所述底电极上凹陷对应的位置设置有辅助凹陷。The resonator includes an auxiliary layer, and the auxiliary layer is provided with auxiliary recesses on the bottom electrode at positions corresponding to the recesses.
6、一种体声波谐振器，包括：6. A bulk acoustic wave resonator, comprising:
基底；base;
声学镜；acoustic mirror;
底电极；bottom electrode;
顶电极；和top electrode; and
压电层，设置在底电极与顶电极之间，a piezoelectric layer, arranged between the bottom electrode and the top electrode,
其中：in:
压电层的下表面设置有压电层下凹陷，压电层的上表面在与所述压电层下凹陷对应的位置设置有压电层上凸起；和/或The lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and the upper surface of the piezoelectric layer is provided with a protrusion on the piezoelectric layer at a position corresponding to the depression under the piezoelectric layer; and/or
压电层的下表面设置有压电层下凸起，压电层的上表面在与所述压电层下凸起对应的位置设置有压电层上凹陷。The lower surface of the piezoelectric layer is provided with a lower protrusion of the piezoelectric layer, and the upper surface of the piezoelectric layer is provided with a depression on the piezoelectric layer at a position corresponding to the lower protrusion of the piezoelectric layer.
7、根据6所述的谐振器，其中，所述压电层上凸起的高度不同于所述压电层下凹陷的深度；和/或所述压电层上凹陷的深度不同于所述压电层下凸起的高度。7. The resonator according to 6, wherein the height of the protrusion on the piezoelectric layer is different from the depth of the depression under the piezoelectric layer; and/or the depth of the depression on the piezoelectric layer is different from the depth of the depression on the piezoelectric layer The height of the bump under the piezoelectric layer.
8、根据6所述的谐振器，其中：8. The resonator according to 6, wherein:
在与压电层上凹陷对应的位置，顶电极的上表面设置有顶电极上凹陷；和/或At positions corresponding to the depressions on the piezoelectric layer, the upper surface of the top electrode is provided with depressions on the top electrode; and/or
在与压电层上凸起对应的位置，顶电极的上表面设置有顶电极上凸起。At positions corresponding to the protrusions on the piezoelectric layer, the upper surface of the top electrode is provided with protrusions on the top electrode.
9、根据8所述的谐振器，其中：9. The resonator of 8, wherein:
顶电极上凹陷的深度不同于压电层上凹陷的深度；和/或the depth of the recesses on the top electrode is different from the depth of the recesses on the piezoelectric layer; and/or
顶电极上凸起的高度不同于压电层上凸起的高度。The height of the bumps on the top electrode is different from the height of the bumps on the piezoelectric layer.
10、根据8所述的谐振器，其中：10. The resonator of 8, wherein:
所述谐振器还包括设置在顶电极上侧的工艺层；The resonator also includes a process layer disposed on the upper side of the top electrode;
在与顶电极上凹陷对应的位置，工艺层的上表面设置有工艺层上凹陷；和/或At a position corresponding to the depression on the top electrode, the upper surface of the process layer is provided with a depression on the process layer; and/or
在与顶电极上凸起对应的位置，工艺层的上表面设置有工艺层上凸起。At positions corresponding to the protrusions on the top electrode, the upper surface of the process layer is provided with protrusions on the process layer.
11、根据10所述的谐振器，其中：11. The resonator of 10, wherein:
工艺层上凹陷的深度不同于顶电极上凹陷的深度；和/或The depth of the recess on the process layer is different from the depth of the recess on the top electrode; and/or
工艺层上凸起的高度不同于顶电极上凸起的高度。The height of the bumps on the process layer is different from the height of the bumps on the top electrode.
12、根据6所述的谐振器，其中：12. The resonator according to 6, wherein:
压电层的下表面设置有所述压电层下凹陷，且所述底电极的上表面形 成有底电极上凸起，所述底电极上凸起的高度与所述压电层下凹陷的深度相同；和/或The lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and a protrusion on the bottom electrode is formed on the upper surface of the bottom electrode, and the height of the protrusion on the bottom electrode is the same as that of the depression under the piezoelectric layer. the same depth; and/or
压电层的下表面设置有所述压电层下凸起，且所述底电极的上表面形成有底电极上凹陷，所述底电极上凹陷的深度与所述压电层下凸起的高度相同。The lower surface of the piezoelectric layer is provided with the lower protrusion of the piezoelectric layer, and the upper surface of the bottom electrode is formed with a depression on the bottom electrode, and the depth of the depression on the bottom electrode is the same as that of the lower protrusion of the piezoelectric layer. same height.
13、根据12所述的谐振器，其中：13. The resonator of 12, wherein:
所述谐振器包括设置在底电极与基底之间的辅助层，所述辅助层在所述底电极上凸起对应的位置包括辅助凸起；和/或The resonator includes an auxiliary layer disposed between the bottom electrode and the substrate, and the auxiliary layer includes auxiliary protrusions at positions corresponding to the protrusions on the bottom electrode; and/or
所述谐振器包括设置在底电极与基底之间的辅助层，所述辅助层在所述底电极上凹陷对应的位置限定辅助凹陷。The resonator includes an auxiliary layer disposed between the bottom electrode and the substrate, and the auxiliary layer defines auxiliary recesses at positions corresponding to the recesses on the bottom electrode.
14、根据13所述的谐振器，其中：14. The resonator of 13, wherein:
所述辅助凸起的高度不同于所述底电极上凸起的高度；和/或The height of the auxiliary protrusion is different from the height of the protrusion on the bottom electrode; and/or
所述辅助凹陷的深度不同于所述底电极上凹陷的深度。The depth of the auxiliary recess is different from the depth of the recess on the bottom electrode.
15、根据1-14中任一项所述的谐振器，其中，所述顶电极的上表面设置有声学阻抗结构。15. The resonator according to any one of 1-14, wherein the upper surface of the top electrode is provided with an acoustic impedance structure.
16、一种体声波谐振器的制造方法，所述体声波谐振器包括基底、声学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层，所述方法包括：16. A method for manufacturing a bulk acoustic wave resonator, the bulk acoustic wave resonator comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer disposed between the bottom electrode and the top electrode, the method comprising:
步骤1：在底电极上表面形成底电极上凹陷和/或底电极上凸起；和Step 1: forming bottom electrode depressions and/or bottom electrode protrusions on the upper surface of the bottom electrode; and
步骤2：沉积压电层，使得压电层下表面设置有与所述底电极上凹陷对应的压电层下凸起和/或使得压电层下表面设置有与所述底电极上凸起对应的压电层下凹陷，且基于沉积，所述压电层的上表面在与压电层下凸起和/或压电层下凹陷对应的位置为平坦面。Step 2: depositing a piezoelectric layer, so that the lower surface of the piezoelectric layer is provided with lower protrusions on the piezoelectric layer corresponding to the depressions on the bottom electrode and/or the lower surface of the piezoelectric layer is provided with protrusions on the bottom electrode. The corresponding piezoelectric layer is recessed and, based on the deposition, the upper surface of the piezoelectric layer is a flat surface at locations corresponding to the protrusions and/or recesses under the piezoelectric layer.
17、根据16所述的方法，包括：17. The method according to 16, comprising:
步骤3：在形成底电极之前设置辅助层，所述辅助层在所述底电极上凸起对应的位置设置有辅助凸起，或所述辅助层在所述底电极上凹陷对应的位置设置有辅助凹陷。Step 3: Before forming the bottom electrode, an auxiliary layer is provided, and the auxiliary layer is provided with an auxiliary protrusion at the position corresponding to the protrusion on the bottom electrode, or the auxiliary layer is provided with a position corresponding to the depression on the bottom electrode. Auxiliary depression.
18、根据17所述的方法，其中：18. The method of 17, wherein:
所述辅助凸起的高度不同于所述底电极上凸起的高度；以及the height of the auxiliary bump is different from the height of the bump on the bottom electrode; and
所述辅助凹陷的深度不同于所述底电极上凹陷的深度。The depth of the auxiliary recess is different from the depth of the recess on the bottom electrode.
19、一种体声波谐振器的制造方法，所述体声波谐振器包括基底、声 学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层，所述方法包括：19. A method for manufacturing a bulk acoustic wave resonator comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer arranged between the bottom electrode and the top electrode, the method comprising:
步骤1：在底电极上表面形成底电极上凹陷和/或底电极上凸起；和Step 1: forming bottom electrode depressions and/or bottom electrode protrusions on the upper surface of the bottom electrode; and
步骤2：Step 2:
沉积压电层，使得压电层下表面设置有与所述底电极上凹陷对应的压电层下凸起以及使得压电层上表面设置有与所述压电层下凸起对应的压电层上凹陷，和/或A piezoelectric layer is deposited, so that the lower surface of the piezoelectric layer is provided with a lower protrusion of the piezoelectric layer corresponding to the depression on the bottom electrode, and the upper surface of the piezoelectric layer is provided with a piezoelectric layer corresponding to the lower protrusion of the piezoelectric layer. depressions in layers, and/or
沉积压电层，使得压电层下表面设置有与所述底电极上凸起对应的压电层下凹陷以及使得压电层上表面设置有与所述压电层下凹陷对应的压电层上凸起。A piezoelectric layer is deposited so that the lower surface of the piezoelectric layer is provided with depressions corresponding to the protrusions on the bottom electrode, and the upper surface of the piezoelectric layer is provided with depressions corresponding to the depressions on the piezoelectric layer. bulge up.
20、根据19所述的方法，其中：20. The method of 19, wherein:
基于所述沉积，所述压电层上凹陷的深度不同于所述压电层下凸起的高度；和/或Based on the deposition, the depth of the depressions on the piezoelectric layer is different from the height of the protrusions below the piezoelectric layer; and/or
基于所述沉积，所述压电层上凸起的高度不同于所述压电层下凹陷的深度。Based on the deposition, the height of the protrusions above the piezoelectric layer is different from the depth of the depressions below the piezoelectric layer.
21、根据19所述的方法，包括步骤3：21. The method according to 19, comprising step 3:
沉积顶电极，使得在与压电层上凹陷对应的位置，顶电极的上表面设置有顶电极上凹陷；和/或depositing a top electrode such that the top electrode is provided with a top electrode depression on its upper surface at a position corresponding to the depression on the piezoelectric layer; and/or
沉积顶电极，使得在与压电层上凸起对应的位置，顶电极的上表面设置有顶电极上凸起。The top electrode is deposited so that the upper surface of the top electrode is provided with the protrusions on the top electrode at the positions corresponding to the protrusions on the piezoelectric layer.
22、根据21所述的方法，包括步骤4：22. The method according to 21, comprising step 4:
所述谐振器还包括设置在顶电极上侧的工艺层，The resonator also includes a process layer disposed on the upper side of the top electrode,
且其中：and of which:
在与顶电极上凹陷对应的位置，工艺层的上表面设置有工艺层上凹陷；和/或At a position corresponding to the depression on the top electrode, the upper surface of the process layer is provided with a depression on the process layer; and/or
在与顶电极上凸起对应的位置，工艺层的上表面设置有工艺层上凸起。At positions corresponding to the protrusions on the top electrode, the upper surface of the process layer is provided with protrusions on the process layer.
23、根据22所述的方法，包括：23. The method according to 22, comprising:
步骤5：在底电极与基底之间设置辅助层，Step 5: Set up an auxiliary layer between the bottom electrode and the substrate,
其中：in:
所述辅助层在所述底电极上凸起对应的位置包括辅助凸起；和/或The auxiliary layer includes auxiliary protrusions at positions corresponding to the protrusions on the bottom electrode; and/or
所述辅助层在所述底电极上凹陷对应的位置限定辅助凹陷。The auxiliary layer defines auxiliary recesses at positions corresponding to the recesses on the bottom electrode.
24、一种滤波器，包括根据1-15中任一项所述的体声波谐振器。24. A filter comprising the bulk acoustic wave resonator of any of 1-15.
25、一种电子设备，包括根据24所述的滤波器，或者根据1-15中任一项所述的体声波谐振器。25. An electronic device comprising the filter according to 24, or the bulk acoustic wave resonator according to any one of 1-15.
这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。The electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。Although embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that changes may be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is determined by It is defined by the appended claims and their equivalents.

Claims (25)

  1. 一种体声波谐振器，包括：A bulk acoustic wave resonator, comprising:
    基底；base;
    声学镜；acoustic mirror;
    底电极；bottom electrode;
    顶电极；和top electrode; and
    压电层，设置在底电极与顶电极之间，a piezoelectric layer, arranged between the bottom electrode and the top electrode,
    其中，压电层的下表面设置有压电层下凹陷和/或压电层下凸起，压电层的上表面在与所述压电层下凹陷和/或压电层下凸起对应的位置为平坦表面。Wherein, the lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer and/or a protrusion under the piezoelectric layer, and the upper surface of the piezoelectric layer corresponds to the depression under the piezoelectric layer and/or the protrusion under the piezoelectric layer The location is a flat surface.
  2. 根据权利要求1所述的谐振器，其中，所述压电层下凹陷的深度和/或所述压电层下凸起的高度不大于500nm。The resonator according to claim 1, wherein the depth of the depression under the piezoelectric layer and/or the height of the protrusion under the piezoelectric layer is not greater than 500 nm.
  3. 根据权利要求1所述的谐振器，其中，所述压电层下凹陷的深度与压电层的厚度的比值和/或所述压电层下凸起的高度与压电层的厚度的比值不大于1/5，所述压电层的厚度为压电层的上表面与压电层的下表面的设置有压电层下凹陷和/或压电层下凸起之外的部分的平坦面之间的距离。The resonator according to claim 1, wherein the ratio of the depth of the depression under the piezoelectric layer to the thickness of the piezoelectric layer and/or the ratio of the height of the protrusion under the piezoelectric layer to the thickness of the piezoelectric layer Not more than 1/5, the thickness of the piezoelectric layer is the flat surface of the upper surface of the piezoelectric layer and the lower surface of the piezoelectric layer, except for the lower surface of the piezoelectric layer and/or the lower surface of the piezoelectric layer. distance between faces.
  4. 根据权利要求1所述的谐振器，其中：The resonator of claim 1, wherein:
    压电层的下表面设置有所述压电层下凹陷，且所述底电极的上表面形成有底电极上凸起，所述底电极上凸起的高度与所述压电层下凹陷的深度相同；和/或The lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and a protrusion on the bottom electrode is formed on the upper surface of the bottom electrode, and the height of the protrusion on the bottom electrode is the same as that of the depression under the piezoelectric layer. the same depth; and/or
    压电层的下表面设置有所述压电层下凸起，且所述底电极的上表面形成有底电极上凹陷，所述底电极上凹陷的深度与所述压电层下凸起的高度相同。The lower surface of the piezoelectric layer is provided with the lower protrusion of the piezoelectric layer, and the upper surface of the bottom electrode is formed with a depression on the bottom electrode, and the depth of the depression on the bottom electrode is the same as that of the lower protrusion of the piezoelectric layer. same height.
  5. 根据权利要求4所述的谐振器，其中：The resonator of claim 4, wherein:
    所述谐振器包括辅助层，所述辅助层在所述底电极上凸起对应的位置设置有辅助凸起；或者The resonator includes an auxiliary layer, and the auxiliary layer is provided with auxiliary protrusions at positions corresponding to the protrusions on the bottom electrode; or
    所述谐振器包括辅助层，所述辅助层在所述底电极上凹陷对应的位置设置有辅助凹陷。The resonator includes an auxiliary layer, and the auxiliary layer is provided with auxiliary recesses on the bottom electrode at positions corresponding to the recesses.
  6. 一种体声波谐振器，包括：A bulk acoustic wave resonator, comprising:
    基底；base;
    声学镜；acoustic mirror;
    底电极；bottom electrode;
    顶电极；和top electrode; and
    压电层，设置在底电极与顶电极之间，a piezoelectric layer, arranged between the bottom electrode and the top electrode,
    其中：in:
    压电层的下表面设置有压电层下凹陷，压电层的上表面在与所述压电层下凹陷对应的位置设置有压电层上凸起；和/或The lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and the upper surface of the piezoelectric layer is provided with a protrusion on the piezoelectric layer at a position corresponding to the depression under the piezoelectric layer; and/or
    压电层的下表面设置有压电层下凸起，压电层的上表面在与所述压电层下凸起对应的位置设置有压电层上凹陷。The lower surface of the piezoelectric layer is provided with a lower protrusion of the piezoelectric layer, and the upper surface of the piezoelectric layer is provided with a depression on the piezoelectric layer at a position corresponding to the lower protrusion of the piezoelectric layer.
  7. 根据权利要求6所述的谐振器，其中：The resonator of claim 6, wherein:
    所述压电层上凸起的高度不同于所述压电层下凹陷的深度；和/或the height of the protrusion on the piezoelectric layer is different from the depth of the depression under the piezoelectric layer; and/or
    所述压电层上凹陷的深度不同于所述压电层下凸起的高度。The depth of the depression on the piezoelectric layer is different from the height of the protrusion under the piezoelectric layer.
  8. 根据权利要求6所述的谐振器，其中：The resonator of claim 6, wherein:
    在与压电层上凹陷对应的位置，顶电极的上表面设置有顶电极上凹陷；和/或At positions corresponding to the depressions on the piezoelectric layer, the upper surface of the top electrode is provided with depressions on the top electrode; and/or
    在与压电层上凸起对应的位置，顶电极的上表面设置有顶电极上凸起。At positions corresponding to the protrusions on the piezoelectric layer, the upper surface of the top electrode is provided with protrusions on the top electrode.
  9. 根据权利要求8所述的谐振器，其中：The resonator of claim 8, wherein:
    顶电极上凹陷的深度不同于压电层上凹陷的深度；和/或the depth of the recesses on the top electrode is different from the depth of the recesses on the piezoelectric layer; and/or
    顶电极上凸起的高度不同于压电层上凸起的高度。The height of the bumps on the top electrode is different from the height of the bumps on the piezoelectric layer.
  10. 根据权利要求8所述的谐振器，其中：The resonator of claim 8, wherein:
    所述谐振器还包括设置在顶电极上侧的工艺层；The resonator also includes a process layer disposed on the upper side of the top electrode;
    在与顶电极上凹陷对应的位置，工艺层的上表面设置有工艺层上凹陷；和/或At a position corresponding to the depression on the top electrode, the upper surface of the process layer is provided with a depression on the process layer; and/or
    在与顶电极上凸起对应的位置，工艺层的上表面设置有工艺层上凸起。At positions corresponding to the protrusions on the top electrode, the upper surface of the process layer is provided with protrusions on the process layer.
  11. 根据权利要求10所述的谐振器，其中：The resonator of claim 10, wherein:
    工艺层上凹陷的深度不同于顶电极上凹陷的深度；和/或The depth of the recess on the process layer is different from the depth of the recess on the top electrode; and/or
    工艺层上凸起的高度不同于顶电极上凸起的高度。The height of the bumps on the process layer is different from the height of the bumps on the top electrode.
  12. 根据权利要求6所述的谐振器，其中：The resonator of claim 6, wherein:
    压电层的下表面设置有所述压电层下凹陷，且所述底电极的上表面形成有底电极上凸起，所述底电极上凸起的高度与所述压电层下凹陷的深度相同；和/或The lower surface of the piezoelectric layer is provided with a depression under the piezoelectric layer, and a protrusion on the bottom electrode is formed on the upper surface of the bottom electrode, and the height of the protrusion on the bottom electrode is the same as that of the depression under the piezoelectric layer. the same depth; and/or
    压电层的下表面设置有所述压电层下凸起，且所述底电极的上表面形成 有底电极上凹陷，所述底电极上凹陷的深度与所述压电层下凸起的高度相同。The lower surface of the piezoelectric layer is provided with the lower protrusion of the piezoelectric layer, and the upper surface of the bottom electrode is formed with a depression on the bottom electrode, and the depth of the depression on the bottom electrode is the same as that of the lower protrusion of the piezoelectric layer. same height.
  13. 根据权利要求12所述的谐振器，其中：The resonator of claim 12, wherein:
    所述谐振器包括设置在底电极与基底之间的辅助层，所述辅助层在所述底电极上凸起对应的位置包括辅助凸起；和/或The resonator includes an auxiliary layer disposed between the bottom electrode and the substrate, and the auxiliary layer includes auxiliary protrusions at positions corresponding to the protrusions on the bottom electrode; and/or
    所述谐振器包括设置在底电极与基底之间的辅助层，所述辅助层在所述底电极上凹陷对应的位置限定辅助凹陷。The resonator includes an auxiliary layer disposed between the bottom electrode and the substrate, and the auxiliary layer defines auxiliary recesses at positions corresponding to the recesses on the bottom electrode.
  14. 根据权利要求13所述的谐振器，其中：The resonator of claim 13, wherein:
    所述辅助凸起的高度不同于所述底电极上凸起的高度；和/或The height of the auxiliary protrusion is different from the height of the protrusion on the bottom electrode; and/or
    所述辅助凹陷的深度不同于所述底电极上凹陷的深度。The depth of the auxiliary recess is different from the depth of the recess on the bottom electrode.
  15. 根据权利要求1-14中任一项所述的谐振器，其中，所述顶电极的上表面设置有声学阻抗结构。The resonator according to any one of claims 1-14, wherein the upper surface of the top electrode is provided with an acoustic impedance structure.
  16. 一种体声波谐振器的制造方法，所述体声波谐振器包括基底、声学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层，所述方法包括：A method for manufacturing a bulk acoustic wave resonator, the bulk acoustic wave resonator comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer disposed between the bottom electrode and the top electrode, the method comprising:
    在底电极上表面形成底电极上凹陷和/或底电极上凸起；和forming bottom electrode depressions and/or bottom electrode protrusions on the upper surface of the bottom electrode; and
    沉积压电层，使得压电层下表面设置有与所述底电极上凹陷对应的压电层下凸起和/或使得压电层下表面设置有与所述底电极上凸起对应的压电层下凹陷，且基于沉积，所述压电层的上表面在与压电层下凸起和/或压电层下凹陷对应的位置为平坦面。The piezoelectric layer is deposited so that the lower surface of the piezoelectric layer is provided with a lower protrusion of the piezoelectric layer corresponding to the depression on the bottom electrode and/or the lower surface of the piezoelectric layer is provided with a pressure corresponding to the protrusion on the bottom electrode. The electrical layer is recessed, and based on deposition, the upper surface of the piezoelectric layer is a flat surface at locations corresponding to the piezoelectric layer under-protrusion and/or the piezoelectric layer under-recess.
  17. 根据权利要求16所述的方法，包括：The method of claim 16, comprising:
    在形成底电极之前设置辅助层，所述辅助层在所述底电极上凸起对应的位置设置有辅助凸起，或所述辅助层在所述底电极上凹陷对应的位置设置有辅助凹陷。Before forming the bottom electrode, an auxiliary layer is provided, and the auxiliary layer is provided with auxiliary protrusions on the bottom electrode at positions corresponding to the protrusions, or the auxiliary layer is provided with auxiliary recesses on the bottom electrode corresponding to the recesses.
  18. 根据权利要求17所述的方法，其中：The method of claim 17, wherein:
    所述辅助凸起的高度不同于所述底电极上凸起的高度；以及the height of the auxiliary bump is different from the height of the bump on the bottom electrode; and
    所述辅助凹陷的深度不同于所述底电极上凹陷的深度。The depth of the auxiliary recess is different from the depth of the recess on the bottom electrode.
  19. 一种体声波谐振器的制造方法，所述体声波谐振器包括基底、声学镜、底电极、顶电极和设置在底电极与顶电极之间的压电层，所述方法包括：A method for manufacturing a bulk acoustic wave resonator, the bulk acoustic wave resonator comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer disposed between the bottom electrode and the top electrode, the method comprising:
    在底电极上表面形成底电极上凹陷和/或底电极上凸起；和forming bottom electrode depressions and/or bottom electrode protrusions on the upper surface of the bottom electrode; and
    沉积压电层，使得压电层下表面设置有与所述底电极上凹陷对应的压电层下凸起以及使得压电层上表面设置有与所述压电层下凸起对应的压电层 上凹陷，和/或沉积压电层，使得压电层下表面设置有与所述底电极上凸起对应的压电层下凹陷以及使得压电层上表面设置有与所述压电层下凹陷对应的压电层上凸起。A piezoelectric layer is deposited, so that the lower surface of the piezoelectric layer is provided with a lower protrusion of the piezoelectric layer corresponding to the depression on the bottom electrode, and the upper surface of the piezoelectric layer is provided with a piezoelectric layer corresponding to the lower protrusion of the piezoelectric layer. and/or depositing a piezoelectric layer, so that the lower surface of the piezoelectric layer is provided with depressions corresponding to the protrusions on the bottom electrode and the upper surface of the piezoelectric layer is provided with the piezoelectric layer. The lower depression corresponds to the upper protrusion on the piezoelectric layer.
  20. 根据权利要求19所述的方法，其中：The method of claim 19, wherein:
    基于所述沉积，所述压电层上凹陷的深度不同于所述压电层下凸起的高度；和/或Based on the deposition, the depth of the depressions on the piezoelectric layer is different from the height of the protrusions below the piezoelectric layer; and/or
    基于所述沉积，所述压电层上凸起的高度不同于所述压电层下凹陷的深度。Based on the deposition, the height of the protrusions above the piezoelectric layer is different from the depth of the depressions below the piezoelectric layer.
  21. 根据权利要求19所述的方法，包括：The method of claim 19, comprising:
    沉积顶电极，使得在与压电层上凹陷对应的位置，顶电极的上表面设置有顶电极上凹陷；和/或depositing a top electrode such that the top electrode is provided with a top electrode depression on its upper surface at a position corresponding to the depression on the piezoelectric layer; and/or
    沉积顶电极，使得在与压电层上凸起对应的位置，顶电极的上表面设置有顶电极上凸起。The top electrode is deposited so that the upper surface of the top electrode is provided with the protrusions on the top electrode at the positions corresponding to the protrusions on the piezoelectric layer.
  22. 根据权利要求21所述的方法，其中：The method of claim 21, wherein:
    所述谐振器还包括设置在顶电极上侧的工艺层；以及The resonator also includes a process layer disposed on the upper side of the top electrode; and
    在与顶电极上凹陷对应的位置，工艺层的上表面设置有工艺层上凹陷；和/或在与顶电极上凸起对应的位置，工艺层的上表面设置有工艺层上凸起。At the position corresponding to the depression on the top electrode, the upper surface of the process layer is provided with the depression on the process layer; and/or at the position corresponding to the protrusion on the top electrode, the upper surface of the process layer is provided with the protrusion on the process layer.
  23. 根据权利要求22所述的方法，包括：The method of claim 22, comprising:
    在底电极与基底之间设置辅助层，An auxiliary layer is arranged between the bottom electrode and the substrate,
    其中：in:
    所述辅助层在所述底电极上凸起对应的位置包括辅助凸起；和/或The auxiliary layer includes auxiliary protrusions at positions corresponding to the protrusions on the bottom electrode; and/or
    所述辅助层在所述底电极上凹陷对应的位置限定辅助凹陷。The auxiliary layer defines auxiliary recesses at positions corresponding to the recesses on the bottom electrode.
  24. 一种滤波器，包括根据权利要求1-15中任一项所述的体声波谐振器。A filter comprising a bulk acoustic wave resonator according to any one of claims 1-15.
  25. 一种电子设备，包括根据权利要求24所述的滤波器，或者根据权利要求1-15中任一项所述的体声波谐振器。An electronic device comprising a filter according to claim 24, or a bulk acoustic wave resonator according to any one of claims 1-15.
PCT/CN2022/086818 2021-04-14 2022-04-14 Bulk acoustic resonator having protrusion and/or recess on lower side of piezoelectric layer, and filter and electronic device WO2022218376A1 (en)

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