WO2019114486A1 - 一种玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 - Google Patents
一种玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 Download PDFInfo
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- WO2019114486A1 WO2019114486A1 PCT/CN2018/115460 CN2018115460W WO2019114486A1 WO 2019114486 A1 WO2019114486 A1 WO 2019114486A1 CN 2018115460 W CN2018115460 W CN 2018115460W WO 2019114486 A1 WO2019114486 A1 WO 2019114486A1
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- 239000011521 glass Substances 0.000 title claims abstract description 148
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 239000005354 aluminosilicate glass Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 19
- 230000008018 melting Effects 0.000 claims abstract description 19
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 38
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 28
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 25
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 25
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 7
- 230000004927 fusion Effects 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 6
- -1 Te 2 O 3 Inorganic materials 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 2
- 238000009776 industrial production Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 2
- 229910011255 B2O3 Inorganic materials 0.000 abstract 1
- 229910003069 TeO2 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 12
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000000137 annealing Methods 0.000 description 8
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000005357 flat glass Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000008395 clarifying agent Substances 0.000 description 5
- 238000006124 Pilkington process Methods 0.000 description 4
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 4
- 238000003280 down draw process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000004031 devitrification Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- OZECDDHOAMNMQI-UHFFFAOYSA-H cerium(3+);trisulfate Chemical compound [Ce+3].[Ce+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OZECDDHOAMNMQI-UHFFFAOYSA-H 0.000 description 1
- 238000003426 chemical strengthening reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 238000009459 flexible packaging Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004293 potassium hydrogen sulphite Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present disclosure relates to the field of glass manufacturing, and in particular to a glass composition, an aluminosilicate glass, and a method and application thereof.
- the display panel is developing in the direction of light and thin, ultra-high-definition display, and the panel process technology is developing to higher processing temperature; at the same time, the single-piece glass is processed by the process, and the thickness reaches 0.25mm, 0.2mm, 0.1. Mm is even thinner.
- the thickness of the glass substrate is greatly reduced, the mechanical strength of the display panel after the box is greatly reduced, and the drop impact resistance is seriously challenged, and the Bending test failure problem occurs in the panel process. Therefore, improving the fracture toughness of the substrate glass material and reducing the brittleness of the glass material is one of the important topics in the research process of the material.
- the substrate substrate material of the flexible display device can be made of materials such as glass, organic polymer, metal, etc., and the properties of the existing materials are superior and inferior, and materials having high strength and high toughness have not yet been obtained.
- the organic polymer flexible substrate has the advantages of low cost and easy manufacture, but has large disadvantages in heat resistance.
- the optimized polyimide Polyimide, PI for short
- LTPS low temperature polysilicon
- ultra-thin glass with a thickness of ⁇ 0.1mm is a highly optimized glass material that has excellent resistance to moisture and oxygen, excellent chemical resistance and mechanical properties.
- AMLCDs active matrix liquid crystal displays
- AMOLEDs active matrix organic light emitting diode panels
- TFTs thin film transistors
- the related technologies, equipment and industrial chains are very mature and the compatibility is very satisfactory.
- the production cost will be greatly reduced.
- the flexible glass substrate may not be folded, not all application scenarios require folding devices. Non-folding flexible optoelectronic devices still have a large number of application requirements.
- ultra-thin glass is a brittle material. Reducing its brittleness and expanding its advantages are still the problems that need to be broken at the material level.
- providing flexible glass substrates with high heat resistance is beneficial to technologies such as LTPS.
- Smooth implementation for example, strain points over 600 ° C, 640 ° C, or even 680 ° C.
- the low-brittle ultra-thin flexible alkali-free glass cover is far superior to the polymer material in terms of strength and air tightness, but there is also a brittle problem that cannot be avoided by the glass material, so the brittleness is reduced at the material level. Improving flexibility is one of the important issues that need to be addressed.
- a first aspect of the present disclosure provides a composition for glass, in terms of mole percent, of SiO 2 , B 2 O 3 , P 2 O 5 , GeO 2 and TeO 2 in the composition.
- the total content is 60-85 mol%; the total content of Al 2 O 3 and Ga 2 O 3 is 3-20 mol%; the total content of ZnO and Y 2 O 3 is 0.1-5 mol%; the total content of alkaline earth metal oxide is 4 -30 mol%.
- the alkaline earth metal oxide is selected from any one or more of MgO, CaO, SrO, and BaO.
- the sum of the contents of B 2 O 3 and P 2 O 5 is greater than 0, and the sum of the contents of B 2 O 3 and P 2 O 5 is compared with B 2 O 3 , P 2 O 5 ,
- the ratio of the sum of the contents of GeO 2 and TeO 2 is 0.6-1;
- the ratio of the sum of the contents of MgO and BaO to the sum of the contents of MgO, CaO, SrO and BaO is more than 0.5 in terms of molar content.
- the ratio of the sum of the contents of B 2 O 3 and P 2 O 5 to the sum of the contents of B 2 O 3 , P 2 O 5 , GeO 2 and TeO 2 in terms of the molar content is 0.68 to 0.92.
- the content of SiO 2 is above 40 mol% in mole percent
- the content of B 2 O 3 is 0-20 mol% in mole percent
- the content of P 2 O 5 is 0-17 mol% in mole percent
- the content of GeO 2 is 0-4 mol% in mole percent
- the content of TeO 2 is from 0 to 5 mol% in terms of mole percent
- the content of Al 2 O 3 is 3-18 mol% in mole percent
- the content of Ga 2 O 3 is 0-4 mol% in terms of mole percentage
- the content of ZnO is 0-2.5 mol% in mole percent
- the content of Y 2 O 3 is from 0 to 3 mol%, based on the mole percent.
- the total content of Al 2 O 3 and Ga 2 O 3 is 5-17 mol% in terms of mole percent.
- the brittleness factor D obtained according to the formula (I) is from -5 to 40, in terms of mole percent,
- P 1 has a value of -2 to 0
- P 2 has a value of -5 to -2
- P 3 has a value of -2 to -1
- P 4 has a value of 0 to 1.5
- P 5 has a value of 1.5 to 3
- P 6 has a value of 0 to 0.5.
- SiO 2 , B 2 O 3 , P 2 O 5 , GeO 2 , Te 2 O 3 , Al 2 O 3 , Ga 2 O 3 , ZnO, Y 2 O 3 , MgO, CaO, SrO, BaO all represent a combination The mole percentage of the component;
- D has a value of -2.1 to 32; further preferably, D has a value of 2 to 19.
- a second aspect of the present disclosure provides a method of producing an aluminosilicate glass, wherein the method comprises sequentially subjecting the glass composition of the first aspect of the present disclosure to melting, forming, annealing, and mechanical processing.
- the method further comprises subjecting the product obtained by the mechanical processing to a secondary fusion thinning treatment, and the condition of the secondary fusion thinning treatment is such that the thickness of the prepared glass is less than 0.1 mm, preferably, at 900-1200 ° C.
- the viscosity of the lower stretch forming zone is 10 5.5 - 10 7 poise.
- a third aspect of the present disclosure provides an aluminosilicate glass prepared by the above method.
- the aluminosilicate glass has a coefficient of thermal expansion of less than 40 ⁇ 10 -7 /° C. in the range of 50-350° C., a strain point temperature of higher than 700° C., and a corresponding melting temperature T m when the viscosity is 200 poise.
- the temperature difference between the molding temperature T 4 and the liquidus temperature T l is greater than 90 ° C at 1550 ° C, and the Young's modulus is less than 80 GPa;
- the aluminosilicate glass has a fracture toughness K IC greater than 1.0 MPa ⁇ m 1/2 ; further preferably, the K IC is greater than 2.8 MPa ⁇ m 1/2 .
- the aluminosilicate glass has a thickness of 0.05 mm and a radius of curvature of less than 3.5 cm.
- a fourth aspect of the present disclosure provides the use of the glass composition of the present disclosure or the aluminosilicate glass of the present disclosure in the preparation of a display device and/or a solar cell,
- a substrate glass substrate material for preparing a flat panel display product and/or a glass film layer material for screen surface protection a substrate glass substrate material for a flexible display product, and/or a surface mount glass material and/or a glass film for screen surface protection.
- the glass composition of the present disclosure is a glass frit having good fracture toughness and belongs to the aluminosilicate glass system, and is suitable for various conventional glass manufacturing methods such as a float method, an overflow method, a calendering method, and a down-draw method.
- a float method for the production of flat glass with a thickness of >0.1mm or flexible glass with a thickness of ⁇ 0.1mm (ie a flexible glass with a thickness of ⁇ 0.1mm by one-shot method) or a method for secondary melting and thinning for the production of thickness ⁇ 0.1mm Flexible glass.
- the glass prepared by the present disclosure has a high strain point, a low melting temperature, a high coefficient of thermal expansion, and at the same time has good toughness, and is suitable for large-scale industrial production.
- the content of SiO 2 is 40 mol% or more in terms of a mole percentage
- the glass composition contains a specific content of SiO 2 , B 2 O 3 , P 2 . O 5 , GeO 2 , TeO 2 , Al 2 O 3 , Ga 2 O 3 , ZnO, Y 2 O 3 and alkaline earth metal oxide
- the glass prepared by using the glass composition has a fracture toughness K IC of more than 1.0 MPa ⁇ m 1/2
- thermal expansion coefficient in the range of 50-350 ° C is lower than 40 ⁇ 10 -7 / ° C
- strain point temperature is higher than 700 ° C
- viscosity is 200 poise
- the corresponding melting temperature T m is lower than 1550 ° C
- molding temperature The difference between T 4 and the liquidus temperature T l is greater than 90 ° C
- the Young's modulus is less than 80 GPa.
- the product is low in brittleness and flexible.
- the finished product may be
- the glass composition or aluminosilicate glass of the present disclosure can be used for preparing display devices and/or solar cells, especially for preparing substrate glass substrate materials for flat panel display products and/or glass film layer materials for screen surface protection, flexibility Display substrate glass substrate material and/or surface mount glass material and/or screen surface protection glass film layer material, substrate glass substrate material of flexible solar cell, and other applications requiring low fragility and high flexibility glass material field.
- a first aspect of the present disclosure provides a composition for glass in which the total content of SiO 2 , B 2 O 3 , P 2 O 5 , GeO 2 and TeO 2 is 60-% by weight. 85 mol%; total content of Al 2 O 3 and Ga 2 O 3 is 3 to 20 mol%; total content of ZnO and Y 2 O 3 is 0.1 to 5 mol%; and total content of alkaline earth metal oxide is 4 to 30 mol%.
- SiO 2 is used as a matrix constituting a network structure, and its addition improves the heat resistance and chemical durability of the glass, and makes the glass less susceptible to devitrification, contributing to the vitrification process.
- excessive SiO 2 causes the melting temperature to rise and the brittleness to increase, thereby placing excessive demands on the production process.
- B 2 O 3 , P 2 O 5 , GeO 2 , and TeO 2 are used as a matrix constituting the aluminosilicate glass, and glass can be separately formed, which can reduce the brittleness of the glass while B 2 O 3 , P 2 O 5 , GeO 2 , TeO 2 are also good co-solvents, which can greatly reduce the melting temperature of the glass and contribute to the vitrification process.
- B 2 O 3 , P 2 O 5 , GeO 2 , TeO 2 are also good co-solvents, which can greatly reduce the melting temperature of the glass and contribute to the vitrification process.
- too much GeO 2 , TeO 2 will lower the viscosity of the glass at a low temperature, so, preferably, the sum of the contents of B 2 O 3 and P 2 O 5 is >0, and B 2 O 3 and P 2 are in terms of molar content.
- the inventors of the present disclosure further found in the study that when the content of SiO 2 is 40 mol% or more in terms of mole percent, the mechanical properties and chemical corrosion resistance of the prepared glass can be further improved. Therefore, in order to further improve the overall performance of the prepared glass and to reduce the brittleness, it is preferable that the content of SiO 2 is 40 mol% or more, SiO 2 , B 2 O 3 , P 2 O 5 , GeO 2 and The total content of TeO 2 is from 65 to 80 mol%. Particularly preferably, the content of SiO 2 is 44 mol% or more and less than 72 mol%.
- the addition of Al 2 O 3 can accelerate the progress and depth of ion exchange, but its ability to compete for free oxygen is strong, and the introduction of a large amount of Al 2 O 3 reduces the openness of the glass structure and makes the glass It tends to be rigid, increasing the brittleness of the glass, and at the same time causing the glass to be devitrified, the coefficient of thermal expansion is reduced, it is difficult to match with the surrounding materials, the high-temperature surface tension and the high-temperature viscosity are too large, and the difficulty of the glass production process is increased.
- Ga 2 O 3 is similar to Al 2 O 3 in that it can greatly increase the ion exchange rate during chemical strengthening, can effectively increase the glass strain point and increase the melting temperature slowly, and can effectively improve the glass impact strength and toughness.
- the addition content and addition ratio of Al 2 O 3 and Ga 2 O 3 are specifically limited.
- the total content of Al 2 O 3 and Ga 2 O 3 is in the range of 3 to 20 mol%, preferably 5 to 17 mol%, more preferably, in mole percent, of Al 2 O 3 .
- the ratio of the sum of the contents of Al 2 O 3 and Ga 2 O 3 is 0.7-1.
- MgO, CaO, SrO, and BaO are all alkaline earth metal oxides, and their addition can effectively lower the high temperature viscosity of the glass, thereby improving the meltability and formability of the glass, and improving the strain point of the glass.
- MgO and BaO have the characteristics of reducing the brittleness of the glass. If the content is too large, the density will increase, and the incidence of cracking, devitrification, and phase separation will increase. Therefore, it is considered that, based on the total number of moles of each component, 4 to 30 mol% of an alkaline earth metal oxide is selected, wherein the alkali metal oxide is selected from any one or more of MgO, CaO, SrO and BaO.
- the ratio of the sum of the contents of MgO and BaO to the sum of the contents of MgO, CaO, SrO and BaO is more than 0.5 in terms of the molar content.
- the rare earth oxide Y 2 O 3 has its unique ability to improve certain properties of the glass, for example, the flexural strength and strain point of the glass are greatly increased with the addition of the rare earth oxide.
- the glass fragility is reduced, the fracture toughness is greatly increased, and the high temperature viscosity is lowered, which brings great convenience to large-scale industrial manufacturing of glass.
- ZnO can effectively reduce the upper limit temperature of the crystallization of the glass; below the softening point, it has the functions of increasing the strength, hardness, increasing the chemical resistance of the glass, lowering the brittleness value, and lowering the coefficient of thermal expansion of the glass.
- the sum of the contents of ZnO and Y 2 O 3 is in the range of 0.1 to 5 mol% based on the molar content of the composition.
- the composition may further contain, as a clarifying agent when the glass is melted, depending on the glass preparation process, and the clarifying agent is preferably at least at least one of a sulfate, a nitrate, a tin oxide, and a stannous oxide.
- the content of the clarifying agent is not more than 1 mol% based on the total moles of each component.
- the specific choice of the clarifying agent is not particularly limited and may be variously selected in the art, for example, the sulfate may be barium sulfate, and the nitrate may be barium nitrate.
- the content of barium sulfate and/or barium nitrate and/or barium nitrate is based on the content of barium oxide and the barium nitrate content is calculated based on barium oxide.
- the content of the RO further includes cerium sulfate, cerium nitrate and cerium nitrate in terms of cerium oxide content and/or cerium oxide content in the clarifying agent.
- the content of B 2 O 3 is 0-20 mol% in mole percent
- the content of P 2 O 5 is 0-17 mol% in mole percent
- the content of GeO 2 is 0-4 mol% in mole percent
- the content of TeO 2 is from 0 to 5 mol% in terms of mole percent
- the content of Al 2 O 3 is 3-18 mol% in mole percent
- the content of Ga 2 O 3 is 0-4 mol% in terms of mole percentage
- the content of ZnO is 0-2.5 mol% in mole percent
- the content of Y 2 O 3 is from 0 to 3 mol%, based on the mole percent.
- the content of B 2 O 3 is 2-20 mol% in mole percent
- the content of P 2 O 5 is 0-14% by mole
- the content of GeO 2 is 0.1 to 4 mol% in terms of mole percent
- the content of TeO 2 is 0.1 to 1 mol% in terms of mole percent
- the content of Al 2 O 3 is 3-14 mol% in mole percent
- the content of Ga 2 O 3 is 0-3 mol% in terms of mole percentage
- the content of ZnO is 0.5-1.4 mol% in terms of mole percentage
- the content of Y 2 O 3 is from 0.4 to 3 mol%, based on the mole percent.
- the D value obtained by calculation according to formula (I) is from 5 to 40, in terms of mole percent
- D P1 ⁇ (B 2 O 3 + P 2 O 5 + 0.5 ⁇ GeO 2 + 0.5 ⁇ Te 2 O 3 ) + P2 ⁇ (1.5 ⁇ Y 2 O 3 + ZnO) + P3 ⁇ (MgO +BaO)+P4 ⁇ (1.5 ⁇ CaO+SrO)+P5 ⁇ (Al 2 O 3 +Ga 2 O 3 )+P6 ⁇ SiO 2 ;
- the value of P1 is -2 to 0, the value of P2 is -5 to -2, the value of P3 is -2 to -1, and the value of P4 is 0 to 1.5. The value is 1.5 to 3, and the value of P6 is 0 to 0.5.
- SiO 2 , B 2 O 3 , P 2 O 5 , GeO 2 , Te 2 O 3 , Al 2 O 3 , Ga 2 O 3 , ZnO, Y 2 O 3 , MgO, CaO, SrO, BaO all represent a combination The mole percentage of the component;
- D has a value of -2.1 to 32; further preferably, D has a value of 2 to 19. Still more preferably, P 1 is -0.5, P 2 is -3, P 3 is -1.5, P 4 is 1, P 5 is 2, and P 6 is 0.25.
- the glass composition of the present invention when the aluminosilicate glass is prepared by using the same, the glass can have the above-mentioned excellent comprehensive properties, mainly due to the mutual cooperation between the components in the composition, especially SiO 2 . , the combination of B 2 O 3 , P 2 O 5 , GeO 2 , TeO 2 , Al 2 O 3 , Ga 2 O 3 , ZnO, Y 2 O 3 , MgO, CaO, SrO, BaO, more especially The interaction between the components of a specific content.
- a second aspect of the present disclosure provides a method of preparing an aluminosilicate glass, the method comprising sequentially subjecting the glass composition of the present disclosure to melting, forming, annealing, and mechanical processing.
- the conditions of the melt treatment include a temperature lower than 1550 ° C and a time greater than 1 h.
- One skilled in the art can determine the specific melting temperature and melting time based on actual conditions.
- the conditions of the annealing treatment include: the temperature is higher than 750 ° C, and the time is greater than 0.1 h.
- the conditions of the annealing treatment include: the temperature is higher than 750 ° C, and the time is greater than 0.1 h.
- the manner of the mechanical processing is not particularly limited, and various mechanical processing methods which are common in the art may be used, for example, the product obtained by annealing treatment may be cut, ground, polished, or the like.
- flat glass having a thickness of more than 0.1 mm or flexible glass having a thickness of less than 0.1 mm can be produced by various conventional glass manufacturing methods such as a float method, an overflow method, a down-draw method, and the like (that is, a thickness of ⁇ 0.1 mm is obtained by one molding method).
- Flexible glass it is also possible to produce flexible glass having a thickness of less than 0.1 mm by secondary melting and thinning. Therefore, the method may further comprise subjecting the product obtained by the mechanical processing to a secondary melting and thinning treatment to obtain a flexible glass having a thickness of less than 0.1 mm.
- the specific method of the secondary fusion thinning treatment is not particularly limited, and various methods commonly used in the art may be used.
- the method of the secondary fusion thinning treatment may include: glass by a float method, an overflow method, a down-draw method, or the like.
- the manufacturing method produces flat glass with a thickness of less than 1 mm, and conveys the flat glass to the feeding port of the secondary drawing forming device, and feeds it into the stretching forming furnace at an appropriate rate V 0 mm/min in the controlled stretch forming zone.
- the rate V 1 is greater than V 0 .
- a third aspect of the present disclosure provides an aluminosilicate glass prepared by the above method.
- the aluminosilicate glass of the present invention has a fracture toughness K IC of more than 1.0 MPa ⁇ m 1/2 , a coefficient of thermal expansion of less than 40 ⁇ 10 -7 /° C. in the range of 50-350° C., and a strain point temperature higher than At 700 ° C, the corresponding melting temperature T m is less than 1550 ° C when the viscosity is 200 poise, the difference between the molding temperature T 4 and the liquidus temperature T l is greater than 90 ° C, and the Young's modulus is less than 80 GPa.
- different processes can produce glass of different thicknesses, and can produce flat glass with a thickness of more than 0.1 mm or flexible glass with a thickness of less than 0.1 mm by various conventional glass manufacturing methods such as a float method, an overflow method, and a down-draw method. It is also possible to further produce a flexible glass having a thickness of less than 0.1 mm by a secondary melt drawing method.
- the aluminosilicate glass having a thickness of 0.05 mm has a radius of curvature of less than 3.5 cm.
- a fourth aspect of the present disclosure provides the use of the glass composition or aluminosilicate glass of the present invention in the preparation of a display device and/or a solar cell, preferably in the preparation of a substrate for a flat panel display product Glass substrate material and/or glass surface layer material for screen surface protection, substrate glass substrate material of flexible display product and/or surface-encapsulated glass material and/or glass film layer material for screen surface protection, substrate glass of flexible solar cell Applications in substrate materials and applications in other applications requiring low brittle, high heat resistant glass materials.
- the coefficient of thermal expansion of the glass at 50-350 ° C was measured using a horizontal dilatometer in accordance with ASTM E-228, in units of 10 -7 /°C.
- the Young's modulus of the glass was measured in accordance with ASTM C-623 in units of GPa.
- the glass fracture toughness K IC was measured in accordance with ASTM E-1820 in units of MPa ⁇ m 1/2 .
- the glass strain point was measured using an annealing point strain point tester in accordance with ASTM C-336 in °C.
- the glass crystallization upper limit temperature is measured by a ladder furnace method in accordance with ASTM C-829, wherein the liquidus temperature T l is in ° C.
- the components were weighed according to the amounts shown in Table 1, mixed, and the mixture was poured into a platinum crucible, and then heated in a resistance furnace at 1530 ° C for 4 hours, and stirred with a platinum rod to discharge air bubbles.
- the molten glass liquid was poured into a stainless steel cast iron grinder, formed into a predetermined block glass product, and then the glass product was annealed in an annealing furnace at 760 ° C for 2 hours, and the power was turned off to cool to 25 ° C with the furnace.
- the glass product is cut, ground, polished, and then cleaned and dried with deionized water to obtain a finished glass product having a thickness of 0.5 mm.
- the various properties of each glass finished product were measured, and the results are shown in Table 1-3.
- the glass product was prepared in the same manner as in Example 1-32 except that the composition of the mixture was as shown in Table 4 and the properties of the obtained product were measured in Table 5.
- the glass composition or aluminosilicate glass of the invention can be used for preparing display devices and/or solar cells, in particular for preparing substrate glass substrate materials for flat panel display products and/or glass film layer materials for screen surface protection, flexibility
- the substrate glass substrate material of the product and/or the surface-encapsulated glass material and/or the glass surface layer material for screen surface protection, the substrate glass substrate material of the flexible solar cell, and other fields of application requiring low-brittle glass materials are displayed.
- the glass is prepared according to the method of the partial embodiment and the comparative example, and then subjected to a secondary melting and thinning treatment, wherein the method of the secondary melting and thinning treatment comprises: cutting, grinding and polishing to obtain a thickness of 0.7 mm and a width of 50 mm.
- the flat glass is conveyed to the feed port of the secondary drawing forming device, and is fed into the stretch forming furnace at a rate of V 0 mm/min to control the viscosity P of the stretch forming zone, and the rate V 1 through the stretching machine and the drum.
- Wind-wound winding was performed in mm/min to obtain a flexible glass having a thickness d1 and a width d2.
- the minimum radius of curvature of each glass finished product was measured using a radius of curvature tester. The conditions of some embodiments and the corresponding minimum radius of curvature are shown in Table 5.
- the method of the present invention can produce an aluminosilicate glass having a thickness of 0.05 mm and a radius of curvature of less than 3.5 cm.
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Abstract
Description
Claims (14)
- 一种玻璃用组合物,其特征在于,以摩尔百分比计,该组合物中,SiO 2、B 2O 3、P 2O 5、GeO 2和TeO 2的总含量为60-85mol%;Al 2O 3和Ga 2O 3的总含量为3-20mol%;ZnO和Y 2O 3的总含量为0.1-5mol%;碱土金属氧化物的总含量为4-30mol%。
- 根据权利要求1所述的玻璃用组合物,其中,所述碱土金属氧化物选自MgO、CaO、SrO和BaO中的任意一种或多种。
- 根据权利要求2所述的玻璃用组合物,其中,以摩尔含量计,B 2O 3和P 2O 5的含量之和大于0,且B 2O 3和P 2O 5的含量之和与B 2O 3、P 2O 5、GeO 2和TeO 2的含量之和的比值为0.6-1;以摩尔含量计,Al 2O 3的含量与Al 2O 3和Ga 2O 3的含量之和的比值为0.7-1;以摩尔含量计,MgO和BaO的含量之和与MgO、CaO、SrO和BaO的含量之和的比值大于0.5。
- 根据权利要求3所述的玻璃用组合物,其中,以摩尔含量计,B 2O 3和P 2O 5的含量之和与B 2O 3、P 2O 5、GeO 2和TeO 2的含量之和的比值为0.68-0.92。
- 根据权利要求1-4中任意一项所述的玻璃用组合物,其中,以摩尔百分比计,SiO 2的含量在40mol%以上;优选地,以摩尔百分比计,B 2O 3的含量为0-20mol%;优选地,以摩尔百分比计,P 2O 5的含量为0-17mol%;优选地,以摩尔百分比计,GeO 2的含量为0-4mol%;优选地,以摩尔百分比计,TeO 2的含量为0-5mol%;优选地,以摩尔百分比计,Al 2O 3的含量为3-18mol%;优选地,以摩尔百分比计,Ga 2O 3的含量为0-4mol%;优选地,以摩尔百分比计,ZnO的含量为0-2.5mol%;优选地,以摩尔百分比计,Y 2O 3的含量为0-3mol%。
- 根据权利要求5所述的玻璃用组合物,其中,以摩尔百分比计,SiO 2的含量在44mol%以上且小于72mol%;优选地,以摩尔百分比计,B 2O 3的含量为2-20mol%;优选地,以摩尔百分比计,P 2O 5的含量为0-14mol%;优选地,以摩尔百分比计,GeO 2的含量为0.1-4mol%;优选地,以摩尔百分比计,TeO 2的含量为0.1-1mol%;优选地,以摩尔百分比计,Al 2O 3的含量为3-14mol%;优选地,以摩尔百分比计,Ga 2O 3的含量为0-3mol%;优选地,以摩尔百分比计,ZnO的含量为0.5-1.4mol%;优选地,以摩尔百分比计,Y 2O 3的含量为0.4-3mol%。
- 根据权利要求1-4中任意一项所述的玻璃用组合物,其中,以摩尔百分比计,Al 2O 3和Ga 2O 3的总含量为5-17mol%。
- 根据权利要求1-4中任意一项所述的玻璃用组合物,其中,按照摩尔百分比计,根据式(I)计算获得的D值为-5至40,式(I):D=P 1×(B 2O 3+P 2O 5+0.5×GeO 2+0.5×Te 2O 3)+P 2×(1.5×Y 2O 3+ZnO)+P 3×(MgO+BaO)+P 4×(1.5×CaO+SrO)+P 5×(Al 2O 3+Ga 2O 3)+P 6×SiO 2;在式(I)中,P 1的取值为-2至0,P 2的取值为-5至-2,P 3的取值为-2至-1,P 4的取值为0至1.5,P 5的取值为1.5至3,P 6的取值为0至0.5;其中,SiO 2、B 2O 3、P 2O 5、GeO 2、Te 2O 3、Al 2O 3、Ga 2O 3、ZnO、Y 2O 3、MgO、CaO、SrO、BaO均表示组合物中该组分的摩尔百分比;优选地,D的取值为-2.1至32;进一步优选地,D的取值为2至19。
- 一种制备铝硅酸盐玻璃的方法,其中,该方法包括将权利要求1-8中任意一项所述的玻璃用组合物依次进行熔融、成型、退火和机械加工处理。
- 根据权利要求9所述的方法,其中,所述方法还包括对机械加工处理得到的产物进行二次熔融拉薄处理,二次熔融拉薄处理的条件使得制备的玻璃的厚度小于0.1mm,优选的,在900-1200℃下拉伸成型区域粘度为10 5.5-10 7泊。
- 权利要求9或10所述方法制备得到的铝硅酸盐玻璃。
- 根据权利要求11所述的铝硅酸盐玻璃,其中,所述铝硅酸盐玻璃在50-350℃范围内的热膨胀系数小于40×10 -7/℃,应变点温度高于700℃,粘度为200泊时对应的熔化温度T m低于1550℃,成型温度T 4与液相线温度T l之间差值大于90℃,杨氏模量小于80GPa;优选地,所述铝硅酸盐玻璃的断裂韧性K IC大于1.0MPa·m 1/2;进一步优选地,K IC大于2.8MPa·m 1/2。
- 根据权利要求11或12所述的铝硅酸盐玻璃,其中,所述铝硅酸盐玻璃的厚度为0.05mm,曲率半径小于3.5cm。
- 权利要求1-8中任意一项所述的玻璃用组合物或权利要求11-13中任意一项所述的铝硅酸盐玻璃在制备显示器件和/或太阳能电池中的应用,优选为在制备平板显示产品的衬底玻璃基板材料和/或屏幕表面保护用玻璃膜层材料、柔性显示产品的衬底玻璃基板材料和/或表面封装玻璃材料和/或屏幕表面保护用玻璃膜层材料、柔性太阳能电池的衬底玻璃基板材料中的应用。
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US11795100B2 (en) | 2023-10-24 |
JP7087102B2 (ja) | 2022-06-20 |
JP2021508666A (ja) | 2021-03-11 |
KR20200088906A (ko) | 2020-07-23 |
CN108129020B (zh) | 2019-06-07 |
KR102578590B1 (ko) | 2023-09-15 |
US20200325062A1 (en) | 2020-10-15 |
CN108129020A (zh) | 2018-06-08 |
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