WO2015053124A1 - Substrate with transparent electrode, method for evaluation of substrate with transparent electrode, method for fabrication of substrate with transparent electrode, touch panel, and method for fabrication of touch panel - Google Patents

Abstract

In this method for evaluation of a substrate with a transparent electrode, the spectral reflectivity (R_A(λ)) of a substrate with transparent electrode (A) and the spectral reflectivity (R_B(λ)) of a substrate (B) whereupon the transparent conductive film layer of the substrate with transparent electrode (A) is absent are measured, and the absolute value (ΔR(λ)) of the spectrum of the difference between the spectral reflectivity (R_A(λ)) and the spectral reflectivity (R_B(λ)) at each wavelength is calculated. One embodiment is characterized in that either the value of ΔV₁, which is obtained by multiplying the ΔR(λ) and the sum (C₁(λ)) of isochromatic functions at each wavelength and integrating the result over a wavelength region of 380-780nm, or the value of ΔS₁, which is obtained by multiplying the ΔR(λ) and the C₁(λ) with a light source spectrum (L(λ)) at each wavelength and integrating the result over the wavelength region of 380-780nm, is used as an index of non-viewability of a transparent electrode pattern.

Description

Substrate with transparent electrode, method for evaluating substrate with transparent electrode, method for manufacturing substrate with transparent electrode, touch panel, and method for manufacturing touch panel

The present invention relates to a substrate with a transparent electrode, a method for evaluating a substrate with a transparent electrode, a method for manufacturing a substrate with a transparent electrode, a touch panel, and a method for manufacturing a touch panel.

A substrate with a transparent electrode for a touch panel is formed by forming a transparent electrode on a transparent insulating substrate, and is used as a position sensor for the touch panel. There are various detection methods for touch panels, and one of them, the capacitance method, requires an electrode pattern for capacitance detection in order to detect a position by detecting a change in capacitance. . The electrode pattern is generally formed by etching, and is composed of an etched portion (transparent electrode non-formed portion) from which the electrode has been removed by etching and a non-etched portion (transparent electrode forming portion) where the electrode remains without being etched. The

Since the touch panel is usually arranged on the display, when the transparent electrode pattern is visually recognized, the quality of the final product is deteriorated. Therefore, a substrate with a transparent electrode on which a transparent electrode is patterned requires non-visibility of a so-called transparent electrode pattern (hereinafter, also simply referred to as a pattern) in which a patterned trace is not visible.

The main reason why the transparent electrode pattern is visually recognized is that an optical difference such as reflectance and color value occurs between the etched portion and the non-etched portion. Therefore, many substrates with transparent electrodes for touch panels have improved invisibility by designing a laminated structure such as adjusting the film thickness and refractive index of the transparent dielectric layer.

JP 2010-182528 A International Publication No. 2010/114056 JP 2013-84376 A JP 2010-76232 A

Thus, in spite of the fact that the invisibility of the transparent electrode pattern is an important characteristic of the substrate with a transparent electrode for a touch panel, quantitative numerical management by visual optical indicators has not been realized.

For example, Patent Document 1 describes a technique using a color difference ΔE calculated according to JIS Z8701 from a reflection spectrum as an invisibility index. Patent Document 2 describes a technique using an integrated value of a difference between reflectance spectra of an etched portion and a non-etched portion as an index of invisibility. Patent Document 3 describes a technique using an absolute value of a difference between average values of reflection spectra. Patent Document 4 describes a technique using a value obtained by multiplying and integrating the absolute value of the difference in reflection spectrum and the standard specific luminous efficiency.

However, the evaluation based on ΔE in Patent Document 1 and the evaluation based on the absolute value or the integrated value of the difference in reflection spectrum in Patent Documents 2 to 4 do not necessarily coincide with human sensory evaluation. Human visual evaluation is necessary for management. For this reason, there is a problem in that a judgment difference occurs depending on the evaluator's skill level, physical condition and the like.

As a result of intensive studies, the present inventors have found that ΔV ₁ shown in the following formula 1, ΔS ₁ shown in formula 2, ΔV ₂ shown in formula 3, or ΔS ₂ shown in formula 4 is evaluated by humans more than conventionally known indexes. It was found that the results were accurately represented.

That is, the present invention relates to a method for evaluating a substrate with a transparent electrode. In the evaluation method of the present invention, the spectral reflectance R _A (λ) of the substrate with a transparent electrode (A) in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on the transparent substrate, and the substrate with the transparent electrode ( The spectral reflectance R _B (λ) of the substrate (B) without the transparent conductive film layer of A) is measured, and the spectral reflectance R _A (λ) and the spectral reflectance R _B (λ) The absolute value ΔR (λ) of the difference spectrum at each wavelength is calculated.

In one embodiment, as shown in Equation 1 below, ΔR (λ) and C ₁ (λ) that is the sum of the color matching functions x (λ), y (λ), and z (λ) are calculated. The value of ΔV ₁ obtained by multiplying at each wavelength and integrating in the wavelength range of 380 to 780 nm, or ΔR (λ) and C ₁ (λ) as shown in Equation 2 below. , The light source spectrum L (λ) multiplied at each wavelength and integrated in the wavelength range of 380 to 780 nm, and the value of ΔS ₁ is obtained on the transparent electrode-formed substrate with the transparent electrode patterned thereon. And a transparent electrode non-formation part, it is used for the difference in the visibility of reflected light, that is, the non-visibility index of the transparent electrode pattern.

In another embodiment, as shown in Equation 3 below, using the ΔR (λ) and the color matching functions x (λ), y (λ), and z (λ), the expression “C ₂ (λ) = l × x ( λ) + m × y (λ) + n × C 2 represented by z (lambda) "(lambda) (However, l = 0 ~ 1.25, m = 0 ~ 2, n = 0.4 to 3, l + m + n = 3) at each wavelength, and integration is performed in the wavelength range from the lower limit wavelength λ ₁ (nm) to the upper limit wavelength λ ₂ (nm) in the visible light region. ΔV ₂ value or the above ΔR (λ) and C ₂ (λ) (where l = 0 to 1.6, m = 0 to 1.6, n = 0.4 to 3, l + m + n = 3) and the light source spectrum L (λ) are multiplied at each wavelength and integrated in a wavelength range of λ ₁ (nm) to λ ₂ (nm). ΔS Characterized by using the values for the index of the non-visibility of the transparent electrode pattern.

The present invention relates to a method for manufacturing a substrate with a transparent electrode in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on a transparent substrate. In the method for producing a substrate with a transparent electrode according to the present invention, the above-described substrate with a transparent electrode is evaluated, and whether any one of the above ΔV ₁ , ΔS ₁ , ΔV _2, and ΔS ₂ is within a predetermined range. It is characterized by determining.

One embodiment of the present invention relates to a substrate with a transparent electrode manufactured by the above manufacturing method.

The present invention provides a substrate with a transparent electrode (A) in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on a transparent substrate, and a substrate in which the transparent conductive film layer of the substrate with a transparent electrode (A) does not exist. And (B). In the substrate with a transparent electrode of the present invention, the value of ΔV ₁ shown in the above formula 1 is 240% nm or less, or the value of ΔS ₁ shown in the above formula 2 is 7.0% nm or less. And

The present invention relates to a touch panel comprising the above substrate with a transparent electrode.

This invention relates to the manufacturing method of the touchscreen characterized by performing the evaluation method of the said board | substrate with a transparent electrode, or the manufacturing method of the said board | substrate with a transparent electrode. Furthermore, the present invention relates to a touch panel manufactured by the above manufacturing method.

According to the present invention, it becomes possible to quantitatively and accurately determine the non-visibility of the transparent electrode pattern on the substrate with a transparent electrode and the touch panel on which the transparent electrode is patterned. The problem of the prior art of difference in sex determination does not occur. By using the evaluation method according to the present invention as an index in the production of a substrate with a transparent electrode, it is possible to provide a substrate with a transparent electrode in which the non-visibility of the transparent electrode pattern is good.

It is a schematic diagram of the cross section showing the layer structure of the board | substrate (A) with a transparent electrode in one Embodiment of this invention. It is a schematic diagram of the cross section showing the layer structure of the board | substrate (B) in one Embodiment of this invention. Is a graph showing the wavelength dependence of C 1 _(λ). It is a graph showing the wavelength dependence of the intensity | strength of a daylight color light source. It is a graph showing the wavelength dependence of the intensity | strength of a D65 light source. It is a graph representing the non-visibility of the correlation by the [Delta] V ₁ and visual evaluation in Example 1. Is a graph representing the non-visibility of the correlation by the [Delta] S ₁ and visual evaluation in Example 2. Is a graph representing the non-visibility of the correlation by the [Delta] S ₁ and visual evaluation of Reference Example 1. It is a graph showing the correlation of (DELTA) E in the comparative example 1, and non-visibility by visual evaluation. It is a graph showing the correlation of the non-visibility by the integrated value of the difference of the reflection spectrum in the comparative example 2, and visual evaluation. It is a graph showing the correlation of the non-visibility by the absolute value of the average difference of the reflection spectrum in the comparative example 3, and visual evaluation. It is a graph showing the correlation of the invisibility by the integrated value of the absolute value of the difference of the luminous reflectance difference in the comparative example 4, and visual evaluation. It is a plane triangular coordinate which shows the relationship between the value of each coefficient l, m, and n of the color matching function C ₂ (λ) and visual evaluation in ΔV ₂ . It is a plane triangular coordinate which shows the relationship between the value of each coefficient l, m, and n of the color matching function C ₂ (λ) and visual evaluation in ΔS ₂ .

Hereinafter, preferred embodiments of the present invention will be described. First, a substrate with a transparent electrode used in the method for evaluating a substrate with a transparent electrode of the present invention (hereinafter also simply referred to as “the evaluation method of the present invention”) will be described.

FIG. 1 is a cross-sectional view of a substrate (A) with a transparent electrode in which a transparent dielectric layer 2 is formed on a transparent substrate 1 and a transparent conductive film layer 3 is formed thereon. FIG. 2 is a cross-sectional view of the substrate (B) from which the transparent conductive film layer 3 has been removed from the substrate with transparent electrodes (A). Note that the dimensional relationship of the thicknesses in FIGS. 1 and 2 is changed as appropriate for the sake of clarity and simplification of the drawings, and does not represent the actual dimensional relationship. Moreover, in each figure, the same referential mark means the same technical matter.

The base material of the transparent substrate is not particularly limited as long as it is colorless and transparent at least in the visible light region, and any substrate can be used as long as a transparent electrode can be formed thereon. Examples thereof include polyester resins such as glass, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene naphthalate (PEN), cycloolefin resins, polycarbonate resins, polyimide resins, and cellulose resins. Among these, polyester resins and cycloolefin resins are preferably used, and polyethylene terephthalate is particularly preferably used. The thickness of the substrate is not particularly limited, but a thickness of 0.01 to 0.4 mm is preferable. If it is in the said range, since durability of a transparent substrate can fully be improved and it has moderate softness | flexibility, it can form into a film by the roll to roll system with sufficient productivity.

Examples of the material for the transparent dielectric layer include acrylic resins, silicone resins, materials mainly composed of oxides such as silicon oxide, titanium oxide, niobium oxide, zirconium oxide, aluminum oxide, and calcium fluoride / magnesium fluoride. A material having a main component can be used. As the oxide constituting the transparent dielectric layer, an oxide that is colorless and transparent at least in the visible light region and has a resistivity of 10 Ω · cm or more is preferable. The thickness of the transparent dielectric layer may be any thickness as long as the resistivity is satisfied. The transparent dielectric layer may be composed of only one layer or may be composed of two or more layers.

A hard coat layer, which is also a transparent dielectric layer, may be previously laminated on one side or both sides of the transparent substrate for the purpose of enhancing the durability of the transparent electrode for touch panel. As a material for the hard coat layer, an acrylic resin, a silicone resin, or the like can be used. The film thickness of the hard coat is preferably 1 to 10 μm because it has moderate durability and flexibility.

The transparent substrate can be subjected to a surface treatment for the purpose of improving the adhesion between the transparent substrate and the transparent conductive film layer. As a means for surface treatment, for example, there is a method of increasing the adhesion force by imparting electrical polarity to the surface of the substrate, and specific examples include corona discharge, plasma method and the like. In the present invention, the transparent dielectric layer between the transparent conductive film layer and the transparent substrate can also have an effect of improving adhesion, and particularly with SiO _x (x = 1.8 to 2.0). If it exists, it is preferable also from the point which does not impair an optical characteristic.

The material of the transparent conductive film layer is not particularly limited as long as it has both transparency and conductivity. Examples of such a material include materials mainly composed of indium oxide, zinc oxide, and tin oxide. Among these, from the viewpoint of low resistance, a material mainly composed of indium oxide is preferably used.

In the present specification, “having a main component” as a substance means that the content of the substance is 51% by weight or more, preferably 70% by weight or more, more preferably 90% by weight or more. As long as the function of the present invention is not impaired, each layer may contain components other than the main component.

The method for forming the transparent conductive film layer is not particularly limited, and an appropriate method can be selected according to desired characteristics, such as a dry process such as sputtering or ion plating, or a wet process such as sol-gel coating.

In a substrate with a transparent electrode for a touch panel such as a capacitive touch panel, a part of the surface of the transparent conductive film layer is patterned by etching or the like. The pattern (transparent electrode pattern) of the transparent conductive film layer is, for example, a method of removing a part of the transparent conductive film layer of the substrate with a transparent electrode by etching, or a part of the transparent conductive film layer when forming the transparent conductive film layer. It is formed by a technique that does not form a film. As a method for removing the transparent conductive film layer by etching, a method is known in which after applying a photosensitive resist, a resist pattern is formed by photolithography or the like, and the exposed transparent conductive film layer is removed with an etching solution. Even other methods may be used arbitrarily as long as the transparent conductive film layer is removed to form a predetermined pattern. As a method of not forming the transparent conductive film layer partially, a method of forming a transparent conductive film layer after forming a mask pattern on the substrate and removing the mask portion, or the like can be given.

Next, the evaluation method of the substrate with a transparent electrode of the present invention will be described. In the evaluation method for a substrate with a transparent electrode of the present invention, first, the spectral reflectance R _A (λ) of the substrate with a transparent electrode (A) in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on the transparent substrate and The spectral reflectance R _B (λ) of the substrate (B) of the substrate (A) with the transparent electrode without the transparent conductive film layer is measured, and the spectral reflectance R _A (λ) and the spectral reflectance are measured. The absolute value ΔR (λ) of the spectrum of the difference at each wavelength with R _B (λ) is calculated.

[Substrate with transparent electrode (A)]
As the substrate with a transparent electrode (A), after forming a transparent conductive film layer on the dielectric layer, the substrate before pattern formation or the non-etched portion of the substrate with transparent electrode after pattern formation can be used. When performing evaluation as a touch panel, after patterning the transparent conductive film layer, the pattern may be too fine to perform reflectance measurement. In such a case, as a sampling sample for reflectance measurement, the pattern shape is changed so that measurement is possible, or the substrate with the transparent electrode (A) in which the transparent electrode is present on the entire surface without performing patterning or etching is used. An evaluation substrate may be formed.

In a touch panel using a substrate with a transparent electrode, the transparent conductive film layer may be crystallized by annealing after forming the transparent conductive film layer. Since the refractive index of the material (such as ITO) constituting the transparent conductive film layer changes before and after crystallization, the invisibility of the transparent electrode pattern also changes before and after crystallization. Therefore, optical design is usually performed based on the optical characteristics of the transparent conductive film layer after crystallization. Moreover, in the transparent conductive film layer before crystallization, since ITO etc. itself absorbs light easily, a transparent electrode pattern becomes easy to visually recognize. For the above reason, when crystallization of a transparent conductive film layer is performed, highly accurate evaluation becomes possible by using what crystallized a transparent conductive film layer as a substrate (A) with a transparent electrode.

[Substrate (B)]
A board | substrate (B) is a thing of the state in which the transparent conductive film layer of the said board | substrate with a transparent electrode (A) does not exist. The board | substrate which etched the transparent conductive film layer of the board | substrate (A) with a transparent electrode, or the board | substrate of the stage before forming a transparent conductive film layer can be used as a board | substrate (B). The etched portion of the substrate with a transparent electrode after pattern formation can also be used as the substrate (B). In the case where the transparent dielectric layer is etched or altered in the patterning process, the substrate (B) for measuring the reflectivity is used as the substrate (B) that has been subjected to the etching process, so that the actual accuracy can be obtained. High evaluation is possible.
As an etching method, an appropriate method can be selected according to the touch panel manufacturing process, such as a wet process using an acid or a dry process using plasma.

When evaluating as a touch panel, as in the case of the substrate with a transparent electrode (A), the pattern may be too fine to measure the reflectance. In such a case, as an extraction sample for reflectance measurement, the pattern shape may be changed so that measurement is possible, or the evaluation substrate may be formed using the substrate (B) from which the entire transparent electrode has been removed. .

[Reflectance spectrum measurement]
The reflection spectrum can be measured by a method according to the standard of JIS Z8722. As a method for measuring the reflection spectrum, an in-line spectral reflectometer is used for in-line measurement during the film forming process, an off-line spectrophotometer is used for measurement after film formation, and a simple touch panel is used for inspection. And a method of measuring a completed touch panel product. The spectral reflectance R _A (λ) and the spectral reflectance R _B (λ) are preferably measured in the same process, such as “measure with an off-line spectrophotometer after film formation”. In addition, when the absolute value ΔR (λ) of the difference in spectral reflectance is used as an index for the manufacturing process, considering that the work at the film forming stage is important for measuring R _B (λ), the reflection spectrum As a measuring method, it is preferable to measure using a spectral reflectometer or a spectrophotometer during the film forming process or after the film formation is completed, and it is particularly preferable to measure after the film formation is completed.

After calculating ΔR (λ), in one embodiment, as shown in Equation 1 above, the sum of ΔR (λ) and color matching functions x (λ), y (λ), and z (λ) is calculated. Is multiplied by C ₁ (λ) at each wavelength and integrated in a wavelength range of 380 to 780 nm to obtain a value of ΔV ₁ . Alternatively, as shown in Equation 2, the ΔR (λ), the C ₁ (λ), and the light source spectrum L (λ) are multiplied at each wavelength and integrated in a wavelength range of 380 to 780 nm. To obtain the value of ΔS ₁ . Here, C ₁ (λ) is expressed by the equation “C ₁ (λ) = x (λ) + y (λ) + z (λ) using color matching functions x (λ), y (λ) and z (λ). ) ”. As will be described later, the light source spectrum L (λ) is a light source spectrum in the environment where the final product is used, and the spectrum of the light source used for measuring the spectral reflectance R _A (λ) and the spectral reflectance R _B (λ). Is not necessarily the same as L (λ).

In another embodiment, as shown in the above equation 3, ΔR (λ) and C ₂ (λ) are multiplied at each wavelength to obtain a lower limit wavelength λ ₁ (nm) to visible light region. The value of ΔV ₂ is obtained by integration in the wavelength range of the upper limit wavelength λ ₂ (nm). Alternatively, as shown in the above equation 4, ΔR (λ), C ₂ (λ), and light source spectrum L (λ) are multiplied at each wavelength to obtain λ ₁ (nm) to λ ₂ (nm determine the value of [Delta] S ₂ integrating in the wavelength range of). Here, C ₂ (λ) is expressed by the equation “C ₂ (λ) = l × x (λ) + m × y (λ) using color matching functions x (λ), y (λ) and z (λ). ) + N × z (λ) ”.

[Color matching function]
The color matching function described above represents the wavelength dependence of human photosensitivity and is standardized by the International Commission on Illumination (CIE). In the CIE standard, the color matching functions are defined as three functions x (λ), y (λ), and z (λ), reflecting that humans have three-dimensional color coordinates. Yes. C ₁ (λ) is a function obtained by adding x (λ), y (λ), and z (λ), and expresses what wavelength light can be perceived by humans. . In addition to the above C ₁ (λ), there are photopic standard relative luminosity and scotopic visual standard relative luminosity as functions that indicate what wavelength light can be perceived by humans. To do. Whereas photopic standard relative luminous sensitivity and scotopic visual standard relative luminous sensitivity are functions with an emphasis on brightness, C ₁ (λ) is a function with an emphasis on color. Therefore, by using C ₁ (λ), the color difference can be reflected more accurately, and as a result, the non-visibility evaluation accuracy can be improved.

In the present invention, it is preferable to use CIE (1964) 10-deg color matching functions, which are values of a 10 degree field of view, as the values of x (λ), y (λ), and z (λ). FIG. 3 shows C ₁ (λ) obtained from the color matching function of the 10 ° field of view. Note that as the values of x (λ), y (λ), and z (λ), the value of the double field of view can be used reflecting the use environment of the final product.

C ₂ (λ) is a function obtained by extending C ₁ (λ), and the expression “C ₂ (λ) = l × x (λ) + m × y (λ) + n × z (λ)” (where l + m + n = 3). In the present invention, even when C ₂ (λ) is used, the non-visibility evaluation accuracy can be improved.

When obtaining the value of ΔV ₂ , from the viewpoint of accurately expressing the evaluation result of visual invisibility, in the above formula, l = 0 to 1.25, m = 0 to 2, and n = 0.4 to 3. Preferably, l = 0.05 to 1.2, m = 0 to 2, n = 0.6 to 3, more preferably l = 0.5 to 1, m = 0.6 to 1.6, n = 0.7 to 1.9. It is most preferable when l = m = n = 1 (that is, when C ₂ (λ) = C ₁ (λ)) (see Examples 3 to 24 described later and FIG. 13).

When obtaining the value of ΔS ₂ , from the viewpoint of accurately expressing the evaluation result of visual invisibility, in the above formula, l = 0 to 1.6, m = 0 to 1.6, n = 0.4 to 3 Preferably, l = 0.05 to 1.6, m = 0 to 1.4, n = 0.6 to 3, more preferably l = 0.2 to 1.6, m = 0. 2 to 1.25, n = 0.6 to 2.6, more preferably l = 0.6 to 1.3, m = 0.6 to 1.1, n = 0.8 to 1.9 It is. It is most preferable when l = m = n = 1 (that is, when C ₂ (λ) = C ₁ (λ)) (see Examples 25 to 47 described later and FIG. 14).

[Light source spectrum]
The light source spectrum used for the calculation of ΔS ₁ or ΔS ₂ can be set according to the usage environment of the final product and the like. For example, various light sources, such as sunlight, D65 light source, and a fluorescent lamp, are mentioned. When it is assumed that the final product is used outdoors, a method using a spectrum obtained by referring to an actual measurement value of a sunlight spectrum or a literature value of a D65 light source is preferable. In addition, when it is assumed that the final product is used indoors, a method of using an illumination spectrum as a light source spectrum is preferable, and a daylight color fluorescent light source or a D65 light source spectrum is preferable. FIG. 4 shows a spectrum of a daylight fluorescent light source, and FIG. 5 shows a spectrum of a D65 light source.

[Calculation of ΔV ₁ and ΔS ₁ ]
ΔV ₁ can be obtained by multiplying ΔR (λ) and C ₁ (λ) at each wavelength and integrating in a wavelength range of 380 to 780 nm, as expressed in Equation 1 above. ΔS ₁ is obtained by multiplying ΔR (λ), C ₁ (λ), and L (λ) at each wavelength and integrating in a wavelength range of 380 to 780 nm, as expressed in Equation 2 above. . Note that ΔV ₁ and ΔS ₁ may be calculated by piecewise quadrature using values at constant wavelength intervals (for example, every 10 nm) as in the examples described later. The same applies to the calculation of ΔV ₂ and ΔS ₂ .

[Calculation of ΔV ₂ and ΔS ₂ ]
ΔV ₂ is obtained by multiplying ΔR (λ) and C ₂ (λ) at each wavelength, as expressed in Equation 3 above, from the lower limit wavelength λ ₁ (nm) to the upper limit wavelength λ ₂ (nm) in the visible light region. ) Is obtained by integration in the wavelength range. ΔS ₂ is obtained by multiplying ΔR (λ), C ₂ (λ), and L (λ) at each wavelength, as expressed in Equation 4 above, to obtain a wavelength of λ ₁ (nm) to λ ₂ (nm). Obtained by integrating over a range. The values of the lower limit wavelength λ ₁ and the upper limit wavelength λ _{2 in} the visible light region are not particularly limited, but are preferably λ ₁ = 380 nm and λ ₂ = 780 nm.

The light source spectrum L (λ) used for the calculation of ΔS ₁ or ΔS ₂ can be arbitrarily set, but the calculation result changes if light sources having different intensities are used. Therefore, it is necessary to standardize the intensity of the light source spectrum. In the present invention, when C ₁ (λ) and L (λ) are multiplied by each wavelength and integrated in a wavelength range of 380 to 780 nm, and C ₂ (λ) and L (λ) are Normalization is performed so that the result becomes 10 when integrated in the wavelength range of λ ₁ (nm) to λ ₂ (nm). In general, the normalization of the light source intensity may be performed by integrating only the light source spectrum, but in the present invention, it is necessary to normalize in consideration of human sensitivity, which is 380 to 780 nm (or λ). ₁ (nm) to λ ₂ (nm)), the above integrated value was adopted. This is the same reason that the k value described in JIS Z8701 is normalized by the integral value of light source spectrum × color matching function.

In the method for evaluating a substrate with a transparent electrode of the present invention, the values of ΔV ₁ , ΔS ₁ , ΔV _2, and ΔS ₂ obtained as described above can be used as indicators of the invisibility of the transparent electrode pattern, respectively. . In order to obtain a transparent electrode substrate with a transparent electrode pattern with high visibility, ΔV ₁ , ΔS ₁ , ΔV ₂ and ΔS ₂ are preferably low. Specifically, the value of ΔV ₁ is preferably 240% nm or less, more preferably 220% nm or less, and further preferably 200% nm or less. The value of ΔS ₁ is preferably 7.0% nm or less, more preferably 6.3% nm or less, and even more preferably 5.6% nm or less. The value of ΔV ₂ is preferably 280% nm or less, more preferably 260% nm or less, and further preferably 190% nm or less. The value of ΔS ₂ is preferably 9.0% nm or less, more preferably 7.5% nm or less, and even more preferably 5.7% nm or less.

The method for evaluating a substrate with a transparent electrode according to the present invention can be incorporated into the manufacturing process of the substrate with a transparent electrode. The above evaluation is performed at the time of setting the manufacturing conditions of the substrate with a transparent electrode, for example, and various manufacturing conditions are determined by adjusting the manufacturing conditions (film forming conditions of the transparent dielectric layer and the transparent conductive film layer) based on the evaluation results. be able to. Moreover, quality control of a board | substrate with a transparent electrode can also be performed by implementing the said evaluation in a production line.

Thus, a method for producing a substrate with a transparent electrode including the evaluation method of the present invention is also one aspect of the present invention. The manufacturing method of the substrate with a transparent electrode of the present invention is the same as the manufacturing method of the conventional substrate with a transparent electrode except that the above-described evaluation method is incorporated.

In the method for manufacturing a substrate with a transparent electrode according to the present invention, it is determined whether any one of the above ΔV ₁ , ΔS ₁ , ΔV ₂ and ΔS ₂ is within a predetermined range. For example, if the evaluation method of the present invention is performed on the substrate with a transparent electrode after the transparent conductive film layer is formed, and the value of ΔV ₁ or the like exceeds a predetermined value, the non-visibility of the transparent electrode pattern Is not within the acceptable range.

The determination result of the value of ΔV ₁ or ΔV ₂ is fed back, and the manufacturing conditions are adjusted so that the value falls within a predetermined range, whereby the non-visibility of the pattern on the substrate with the transparent electrode after patterning the transparent electrode Can be improved. If the determination result of the value of ΔS ₁ or ΔS ₂ is fed back to the manufacturing conditions, the invisibility in the usage environment of the final product can be improved. That is, as the light source spectrum L (λ) used when calculating ΔS ₁ or ΔS ₂ , by using the light source spectrum in the use environment of the final product or the light source spectrum close to the use environment, the pattern in the use environment of the final product is determined. It becomes possible to evaluate non-visibility more accurately. For example, in a mobile device that is often used outdoors, a pattern tends to be easily visible under outdoor sunlight. Therefore, using an actually measured value of a sunlight spectrum or a pseudo sunlight spectrum as L (λ) , ΔS ₁ or ΔS ₂ is preferably obtained.

Examples of the production conditions to be adjusted include film formation conditions (material, thickness, gas flow rate, etc.) of the transparent dielectric layer, film formation conditions (material, thickness, gas flow rate, etc.) of the transparent conductive layer, and the like. Two or more manufacturing conditions may be adjusted simultaneously. For example, when the values of ΔV ₁ , ΔS _1, etc. are higher than the target values, reducing the thickness of at least one of the transparent dielectric layer and the transparent conductive film layer, or at least one of the transparent dielectric layer and the transparent conductive film layer These values can be lowered by increasing the amount of oxygen during film formation.

Moreover, quality control of a substrate with a transparent electrode can be performed by adding the determination result to the substrate with a transparent electrode. For example, in a touch panel manufacturing process, the yield of the final product can be increased by selectively using a substrate with a transparent electrode whose values of ΔV ₁ , ΔS _{1 and the} like are equal to or less than target values. As a method of adding a determination result to a substrate with a transparent electrode, a method of printing a label printed with the determination result or a medium such as an IC chip on which the determination result is recorded is attached to a substrate with a transparent electrode or packed together with a substrate with a transparent electrode, the determination result And a method of printing or printing directly on a substrate with a transparent electrode. The determination result can be expressed by letters, numbers, symbols, barcodes, two-dimensional codes, etc., or may be expressed in combination.

The above-mentioned method is mentioned as a measuring method of a reflection spectrum. Among them, the method of measuring the reflection spectrum in-line during the film forming process is preferable, and the spectral reflectance R _B (λ) is preferably measured after the transparent dielectric layer is formed and before the transparent conductive film layer is formed. More preferably, the spectral reflectance of the substrate and the spectral reflectance of the substrate with a transparent electrode after the transparent conductive film layer is formed are measured in-line as the spectral reflectance R _A (λ).

ΔV ₁ is preferably 240% nm or less, more preferably 220% nm or less, and even more preferably 200% nm or less, and ΔS ₁ is preferably 7.0% nm or less, more preferably 6.3. % V or less, more preferably 5.6% nm or less, ΔV ₂ is preferably 280% nm or less, more preferably 260% nm or less, more preferably 190% nm or less, and ΔS ₂ is When the thickness is preferably 9.0% nm or less, more preferably 7.5% nm or less, and even more preferably 5.7% nm or less, the transparent electrode pattern should be a substrate with a transparent electrode having high non-visibility, respectively. Can do. By managing the manufacturing conditions so as to be in such a numerical range, it is possible to manufacture a substrate with a transparent electrode with good non-visibility.

Furthermore, according to the present invention, the determination result can be fed back to the film forming process of the transparent conductive film layer without being affected by the difference in determination of the visibility of the transparent electrode pattern due to the evaluator's skill level, etc. Can be detected at an early stage, and can contribute to productivity improvement.

[Use of substrates with transparent electrodes]
The board | substrate with a transparent electrode of this invention can be used as transparent electrodes, such as a display, a light emitting element, a photoelectric conversion element, and is used suitably as a transparent electrode for touchscreens. Especially, since a transparent conductive film layer is low resistance, it is preferably used for a capacitive touch panel.

In the formation of the touch panel, a conductive ink or paste is applied on a substrate with a transparent electrode, and heat treatment is performed, whereby a collecting electrode as a wiring for a routing circuit is formed. The method for the heat treatment is not particularly limited, and examples thereof include a heating method using an oven or an IR heater. The temperature and time of the heat treatment are appropriately set in consideration of the temperature and time at which the conductive paste adheres to the transparent electrode. For example, examples include heating at 120 to 150 ° C. for 30 to 60 minutes for heating by an oven and heating at 150 ° C. for 5 minutes for heating by an IR heater. In addition, the formation method of the circuit wiring is not limited to the above, and may be formed by a dry coating method. In addition, since the wiring for the routing circuit is formed by photolithography, the wiring can be thinned.

Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples.

[Production of substrate]
[Substrate 1]
As a substrate (A) ₁ with a transparent electrode, a transparent dielectric layer (high refractive index layer, low refractive index layer) and a transparent conductive film layer were sequentially laminated on a base material (transparent substrate). Nb ₂ O _{5 was used as} the high refractive index layer, SiO ₂ was used as the low refractive index layer, and ITO in which tin oxide was doped into indium oxide was used as the transparent conductive film layer.

A film having a hard coat layer (urethane resin) formed on both sides of a PET film (thickness 125 μm) was used as a substrate, and Nb ₂ O ₅ , SiO ₂ , and ITO were sequentially formed thereon by sputtering. The thickness of the hard coat layer was 5 μm, the thickness of Nb ₂ O ₅ was 8 nm, the thickness of SiO ₂ was 50 nm, and the thickness of ITO was 28 nm.

Since ITO immediately after sputtering is amorphous, the ITO was crystallized by annealing in an oven at 150 ° C. for 30 minutes. The substrate with a transparent electrode thus obtained was designated as substrate (A) ₁ .

Substrate (B) ₁ was produced by wet etching the transparent conductive film layer of substrate (A) ₁ with a transparent electrode using an etching solution (ITO-02 manufactured by Kanto Chemical).

[Visual invisibility evaluation]
The substrate (A) ₁ with a transparent electrode was patterned by photolithography to prepare a patterning sample 1. Using this patterning sample 1, the non-visibility of the transparent electrode pattern was evaluated in five levels from level 1 to level 5 under a daylight fluorescent lamp. It shows that non-visibility is so favorable that a number is large. The visual invisibility level of the patterning sample 1 was 1.

[Substrate 2]
A substrate (A) ₂ with a transparent electrode was prepared in the same manner as in Example 1 except that the thickness of SiO ₂ was 40 nm and the thickness of ITO was 25 nm. B) ₂ and patterning sample 2 were prepared. The visual invisibility level of the patterning sample 2 was 2.

[Substrate 3]
Except that the thickness of Nb ₂ O ₅ was 7 nm and the thickness of ITO was 26 nm, a substrate with a transparent electrode (A) ₃ was prepared in the same manner as in Example 1, and the transparent conductive film layer was wet etched. Substrate (B) ₃ and patterning sample 3 were produced. The visual invisibility level of the patterning sample 3 was 3.

[Substrate 4]
A substrate (A) ₄ with a transparent electrode was produced in the same manner as in Example 1 except that the thickness of ITO was set to 26 nm, and the transparent conductive film layer was wet-etched to obtain the substrate (B) ₄ and the patterning sample 4 Was made. The visual invisibility level of the patterning sample 4 was 4.

[Substrate 5]
A substrate (A) ₅ with a transparent electrode was prepared in the same manner as in Example 1 except that the thickness of Nb ₂ O ₅ was 6 nm, the thickness of SiO ₂ was 34 nm, and the thickness of ITO was 10 nm. The substrate (B) ₅ and the patterning sample 5 were produced by wet etching. The visual invisibility level of the patterning sample 5 was 5.

[Substrate 6]
A transparent electrode substrate (A) ₆ was prepared in the same manner as in Example 1 except that the thickness of Nb ₂ O ₅ was 6 nm, the thickness of SiO ₂ was 30 nm, and the thickness of ITO was 10 nm. The substrate (B) ₆ and the patterning sample 6 were produced by wet etching. The visual invisibility level of the patterning sample 5 was 5.

[Example 1]
The reflection spectra of the substrates with transparent electrodes (A) ₁ to (A) ₅ and substrates (B) ₁ to (B) ₅ prepared above were measured, and ΔV ₁ was calculated based on Equation 1.

[Reflectance spectrum measurement]
The reflection spectrum was measured over a wavelength range of 380 nm to 780 nm every wavelength interval of 10 nm using a LAMBDA750 manufactured by PerkinElmer, Inc., which is a spectrophotometer equipped with an integrating sphere. The measurement was performed in a room temperature environment with an air temperature of 25 ° C. and a humidity of 40%. In the measurement of the reflection spectrum, a sample was placed so that the monochromatic light that was split was incident on the film-forming surface, and all transmitted light was measured with an integrating sphere. At the time of measuring the reflection spectrum, the reflectance including the back surface reflection was measured without performing any special treatment such as black coating on the back surface. The sample was fixed by pressing the outside of the portion in contact with the integrating sphere opening, and the measurement was performed with the back surface in contact with air.

[Calculation of ΔV ₁ ]
ΔV ₁ was obtained by multiplying ΔR (λ) and C ₁ (λ) at each wavelength and integrating in a wavelength range of 380 to 780 nm, as expressed in Equation 1. ΔR (λ) is the absolute value of the difference between the reflection spectra of the substrate with transparent electrode (A) and the substrate (B) obtained by the reflection spectrum measurement. The color matching function was adjusted to the measurement wavelength of the reflection spectrum, and a wavelength range of 380 nm to 780 nm was used for each wavelength interval of 10 nm. The same applies to the calculation of ΔS ₁ , ΔV ₁ and ΔS ₂ .

The result obtained by this calculation is shown in FIG. ΔV ₁ and visual non-visibility evaluation results show a good correlation, and it can be seen that ΔV ₁ is excellent as a non-visibility evaluation method.

[Example 2]
In Example 1, the invisibility was evaluated using ΔS ₁ instead of the evaluation function ΔV ₁ . For the calculation of ΔS _1, the same daylight color fluorescent lamp light source spectrum as the light source used for visual evaluation was used.

[Calculation of ΔS ₁ ]
ΔS ₁ is obtained by multiplying ΔR (λ), C ₁ (λ), and the light source spectrum L (λ) at each wavelength and integrating in the wavelength range of 380 to 780 nm, as expressed in Equation 2. It was. In this example, normalization was performed so that the result was 10 when C ₁ (λ) and L (λ) were multiplied by each wavelength and integrated in a wavelength range of 380 to 780 nm.

The result obtained by this calculation is shown in FIG. ΔS ₁ and visual non-visibility evaluation results show a good correlation, and it can be seen that ΔS ₁ is excellent as a non-visibility evaluation method.

[Reference Example 1]
In Example 2, ΔS ₁ was calculated using the D65 light source spectrum as the light source spectrum L (λ) instead of the daylight fluorescent lamp light source spectrum.

The result obtained by this calculation is shown in FIG. In FIG. 8, for reference, it is compared with the invisibility level evaluated under a daylight color fluorescent lamp. It was confirmed that ΔS ₁ can be calculated even when the light source is changed.

[Comparative Example 1]
From the reflection spectrum obtained in Example 1, using CIE (1964) 10-deg color matching functions as the color matching function and the D65 light source spectrum as the light source spectrum, the L ^* a ^* b ^* color system described in JIS Z8701 The color difference ΔE was calculated. The obtained results are shown in FIG. The correlation between ΔE and visual invisibility evaluation results is poor, and ΔE cannot represent invisibility with sufficient accuracy.

[Comparative Example 2]
By calculating the following formula 5 from the reflection spectrum obtained in Example 1, the integrated value of the difference in the reflection spectrum described in International Publication No. 2010/114056 (Patent Document 2) was calculated. The obtained result is shown in FIG. There is a poor correlation between the integrated value of the difference in the reflection spectrum and the evaluation result of the invisibility by visual observation, and the integrated value of the difference in the reflection spectrum cannot express the invisibility with sufficient accuracy.

[Comparative Example 3]
From the reflection spectrum obtained in Example 1, the absolute value of the average difference of the reflection spectra described in Japanese Patent Laid-Open No. 2013-84376 (Patent Document 3) was calculated. The obtained results are shown in FIG. The absolute value of the average difference in the reflection spectrum and the evaluation result of visual invisibility are poorly correlated, and the absolute value of the average difference in the reflection spectrum cannot express the invisibility with sufficient accuracy.

[Comparative Example 4]
From the reflection spectrum obtained in Example 1, the integral value of the absolute value of the difference in luminous reflectance described in Japanese Patent Application Laid-Open No. 2010-76232 (Patent Document 4) was calculated. The obtained result is shown in FIG. The integral value of the absolute value of the difference in luminous reflectance and the evaluation result of visual invisibility are not well correlated, and the integral value of the absolute value of the difference in luminous reflectance can represent the non-visibility with sufficient accuracy. Not done.

The results of each example, reference example and comparative example are shown in Table 1. Table 1 also shows the results of the patterning sample 6 (substrate (A) ₆ with transparent electrode and substrate (B) ₆ ). As is apparent from Table 1, ΔV ₁ and ΔS ₁ (Examples 1 and 2) completely correspond to the order of visual evaluation, whereas the conventional index (Comparative Examples 1 to 4) has a visual evaluation. The order is reversed. Thus, the non-visibility cannot be quantified with sufficient accuracy by the conventional index.

Furthermore, it can be seen from the results of the patterning samples 5 and 6 that by using ΔV ₁ and ΔS ₁ , the difference in invisibility that cannot be distinguished by visual evaluation can be quantified. From this result, by using ΔV ₁ and ΔS ₁ , it is expected that the non-visibility of the transparent electrode pattern can be quantitatively evaluated even for a substrate with a transparent electrode with extremely good non-visibility.

[Examples 3 to 24]
In Example 1, the invisibility was evaluated using ΔV ₂ instead of the evaluation function ΔV ₁ . In Examples 3 to 24, the reflection spectra of the substrates with transparent electrodes (A) ₁ to (A) ₄ and the substrates (B) ₁ to (B) ₄ were measured.

[Calculation of ΔV ₂ ]
ΔV ₂ was obtained by multiplying ΔR (λ) and C ₂ (λ) at each wavelength and integrating in a wavelength range of 380 to 780 nm, as expressed in Equation 3. Table 2 shows the values of l, m and n. In the first embodiment, l = m = n = 1, that is, C ₂ (λ) = C ₁ (λ).

The results obtained from this calculation are shown in Table 2. Similar to ΔV ₁ , ΔV ₂ corresponds to the order of visual evaluation.

[Examples 25 to 47]
In Example 2, the invisibility was evaluated using ΔS ₂ instead of the evaluation function ΔS ₁ . For the calculation of ΔS _2, the same daylight color fluorescent light source spectrum as that used for the visual evaluation was used. In Examples 25 to 47, the reflection spectra of the substrates with transparent electrodes (A) ₁ to (A) ₄ and the substrates (B) ₁ to (B) ₄ were measured.

[Calculation of ΔS ₂ ]
ΔS ₂ is obtained by multiplying ΔR (λ), C ₂ (λ), and the light source spectrum L (λ) at each wavelength and integrating in a wavelength range of 380 to 780 nm, as expressed in Equation 4. It was. In this example, normalization was performed so that the result would be 10 when C ₂ (λ) and L (λ) were multiplied by each wavelength and integrated in the wavelength range of 380 to 780 nm. Table 3 shows the values of l, m and n. In the second embodiment, l = m = n = 1, that is, C ₂ (λ) = C ₁ (λ).

Table 3 shows the results obtained by this calculation. It can be seen that ΔS ₂ corresponds to the order of visual evaluation as well as ΔS ₁ .

Table 2 shows correlation coefficients between ΔV ₂ (Examples 3 to 24) and visual results (levels 1 to 4). Table 3 shows ΔS ₂ (Examples 25 to 47) and visual results (levels 1 to 4). The correlation coefficient with 4) is shown. The correlation coefficient is a statistical index indicating the correlation between two variables, and the covariance of two variables (ΔV ₂ -level in Table _{2 and} ΔS ₂ -level in Table 3), respectively. It can be obtained by dividing by the standard deviation. The closer the correlation coefficient is to −1, the more the ΔV ₂ or ΔS ₂ matches with the visual evaluation.

FIG. 13 is a plane triangular coordinate showing the relationship between the values of the coefficients l, m and n of the color matching function C ₂ (λ) and visual evaluation in ΔV ₂ (Examples 3 to 24). FIG. 14 is a plane triangular coordinate showing the relationship between the values of the coefficients l, m and n of the color matching function C ₂ (λ) and visual evaluation in ΔS ₂ (Examples 25 to 47). FIGS. 13 and 14 show triangular coordinates of 0 ≦ l ≦ 3 with vertex l being 3, 0 ≦ m ≦ 3 with vertex m being 3, and 0 ≦ n ≦ 3 having vertex n being 3. Any point in this coordinate satisfies the relationship of l + m + n = 3.

13 and 14 show the correlation coefficient between ΔV ₂ or ΔS ₂ and the visual results (levels 1 to 4), and “○” indicates that the correlation coefficient is −1 or more and −0.99 or less. , “◇” for a value greater than −0.99 and −0.97 or less, “△” for a value greater than −0.97 and −0.95 or less, and “□” for a value greater than −0.95 Is shown.

From FIG. 13 and FIG. 14, in any case of ΔV ₂ and ΔS ₂ , the values of l, m, and n are close to 1 (the ratio of x (λ), y (λ), and z (λ)) The correlation with the visual evaluation is good, and the correlation with the visual evaluation tends to deteriorate as the ratio of x (λ), y (λ) and z (λ) is biased to at least one of Was confirmed.

Also, compared to [Delta] S _2, the [Delta] V _2, correlation between visual evaluation when the value of l is large (x (lambda) when there is a high proportion of) deteriorates, if the value of m and n is greater (y ( It was confirmed that the correlation with the visual evaluation tends to improve in the case where the ratio of λ) and z (λ) is high.

DESCRIPTION OF SYMBOLS 1 Transparent substrate 2 Transparent dielectric layer 3 Transparent conductive film layer

Claims (12)

1. Spectral reflectance R _A (λ) of the transparent electrode substrate (A) in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on the transparent substrate, and the transparent conductive film of the substrate with the transparent electrode (A) The spectral reflectance R _B (λ) of the substrate (B) where no layer is present is measured,
   Calculating the absolute value ΔR (λ) of the spectrum of the difference between the spectral reflectance R _A (λ) and the spectral reflectance R _B (λ) at each wavelength;
   As shown in the following equation 1, ΔR (λ) is multiplied by C ₁ (λ) which is the sum of the color matching functions x (λ), y (λ) and z (λ) at each wavelength, The value of ΔV ₁ obtained by integrating in the wavelength range of 380 to 780 nm, or the ΔR (λ), the C ₁ (λ), the light source spectrum L (λ), and Is multiplied at each wavelength and integrated in a wavelength range of 380 to 780 nm, and the value of ΔS ₁ is calculated between the transparent electrode forming portion and the transparent electrode non-forming portion in the substrate with the transparent electrode on which the transparent electrode is patterned. An evaluation method for a substrate with a transparent electrode, which is used as an evaluation index for a difference in visibility of reflected light.
   

   

   
2. Spectral reflectance R _A (λ) of the transparent electrode substrate (A) in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on the transparent substrate, and the transparent conductive film of the substrate with the transparent electrode (A) The spectral reflectance R _B (λ) of the substrate (B) where no layer is present is measured,
   Calculating the absolute value ΔR (λ) of the spectrum of the difference between the spectral reflectance R _A (λ) and the spectral reflectance R _B (λ) at each wavelength;
   As shown in the following Equation 3, using the ΔR (λ) and the color matching functions x (λ), y (λ), and z (λ), the equation “C ₂ (λ) = 1 × x (λ) + m × y (λ) + n × C 2 represented by z (lambda) "(lambda) (However, l = 0 ~ 1.25, m = 0 ~ 2, n = 0.4 ~ 3, l + m + n = 3 Or the value of ΔV ₂ obtained by integrating in the wavelength range from the lower limit wavelength λ ₁ (nm) to the upper limit wavelength λ ₂ (nm) of the visible light region, or the following formula: As shown in FIG. 4, ΔR (λ) and C ₂ (λ) (where l = 0 to 1.6, m = 0 to 1.6, n = 0.4 to 3, l + m + n = 3) patterning any), and a light source spectrum L (lambda) is multiplied at each wavelength, lambda _{1 (nm)} of the value of [Delta] S ₂ obtained by integrating in the wavelength range of ~ lambda _{2 (nm),} the transparent electrode Transparent electrode evaluation method of a substrate, which comprises using the evaluation index difference in visibility of the reflected light between the transparent electrode formation portion and the transparent electrode-free portion of the transparent electrode-bearing substrate with.
   

   

   
3. A method for producing a substrate with a transparent electrode, in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on a transparent substrate,
   Evaluation of a substrate with a transparent electrode is performed by the method according to claim 1 or 2, and it is determined whether any of the values of ΔV ₁ , ΔS ₁ , ΔV ₂ and ΔS ₂ is within a predetermined range. A method for producing a substrate with a transparent electrode, which is characterized.
4. The determination result of any one of the values ΔV ₁ , ΔS ₁ , ΔV _2, and ΔS ₂ is fed back, and the transparent dielectric layer and / or the transparent conductive film layer is manufactured so that the value falls within a predetermined range. The manufacturing method of the board | substrate with a transparent electrode of Claim 3 which adjusts film | membrane conditions.
5. 5. The method with a transparent electrode according to claim 3, further comprising a step of adding a determination result of any value of ΔV ₁ , ΔS ₁ , ΔV _2, and ΔS _{2 to} the substrate with a transparent electrode after the evaluation. A method for manufacturing a substrate.
6. As the spectral reflectance R _B (λ), the spectral reflectance of the substrate after the transparent dielectric layer is formed and before the transparent conductive film layer is formed, and the spectral reflectance R _A (λ 6. The production of a substrate with a transparent electrode according to claim 3, wherein the spectral reflectance of the substrate with the transparent electrode after the transparent conductive film layer is formed is measured in-line. Method.
7. The determination is performed based on whether the value of ΔV ₁ is 240% nm or less or whether the value of ΔS ₁ is 7.0% nm or less. The manufacturing method of the board | substrate with a transparent electrode of description.
8. A substrate with a transparent electrode, characterized by being produced by the production method according to any one of claims 3 to 7.
9. A substrate with a transparent electrode (A) in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on a transparent substrate, and a substrate (B) without the transparent conductive film layer of the substrate with a transparent electrode (A) A substrate with a transparent electrode comprising:
   Wherein the spectral reflectance of the transparent electrode-bearing substrate _{(A) R A (λ)} , and a spectral reflectance R _B of the substrate _(B) (λ) is measured,
   Calculating the absolute value ΔR (λ) of the spectrum of the difference between the spectral reflectance R _A (λ) and the spectral reflectance R _B (λ) at each wavelength;
   As shown in the following equation 1, ΔR (λ) is multiplied by C ₁ (λ) which is the sum of the color matching functions x (λ), y (λ) and z (λ) at each wavelength, The value of ΔV ₁ obtained by integrating in the wavelength range of 380 to 780 nm is 240% nm or less, or, as shown in the following equation 2, ΔR (λ), C ₁ (λ) and With a transparent electrode, the value of ΔS ₁ obtained by multiplying the light source spectrum L (λ) at each wavelength and integrating in the wavelength range of 380 to 780 nm is 7.0% nm or less substrate.
   

   

   
10. A touch panel comprising the substrate with a transparent electrode according to claim 8 or 9.
11. A method for producing a touch panel, wherein the method for evaluating a substrate with a transparent electrode according to claim 1 or 2 or the method for producing a substrate with a transparent electrode according to any one of claims 3 to 7 is performed. .
12. A touch panel manufactured by the manufacturing method according to claim 11.

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