WO2011147517A1 - Leuchtstoffe - Google Patents
Leuchtstoffe Download PDFInfo
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- WO2011147517A1 WO2011147517A1 PCT/EP2011/002084 EP2011002084W WO2011147517A1 WO 2011147517 A1 WO2011147517 A1 WO 2011147517A1 EP 2011002084 W EP2011002084 W EP 2011002084W WO 2011147517 A1 WO2011147517 A1 WO 2011147517A1
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- 239000000126 substance Substances 0.000 title abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 74
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 137
- 150000001875 compounds Chemical class 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical class OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052776 Thorium Inorganic materials 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052729 chemical element Inorganic materials 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 229920001296 polysiloxane Polymers 0.000 description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 238000002360 preparation method Methods 0.000 description 15
- 230000005855 radiation Effects 0.000 description 14
- 238000000576 coating method Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 238000000295 emission spectrum Methods 0.000 description 8
- 230000000875 corresponding effect Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000725 suspension Substances 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000006228 supernatant Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 238000009877 rendering Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- OCKGFTQIICXDQW-ZEQRLZLVSA-N 5-[(1r)-1-hydroxy-2-[4-[(2r)-2-hydroxy-2-(4-methyl-1-oxo-3h-2-benzofuran-5-yl)ethyl]piperazin-1-yl]ethyl]-4-methyl-3h-2-benzofuran-1-one Chemical compound C1=C2C(=O)OCC2=C(C)C([C@@H](O)CN2CCN(CC2)C[C@H](O)C2=CC=C3C(=O)OCC3=C2C)=C1 OCKGFTQIICXDQW-ZEQRLZLVSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- UHZZMRAGKVHANO-UHFFFAOYSA-M chlormequat chloride Chemical compound [Cl-].C[N+](C)(C)CCCl UHZZMRAGKVHANO-UHFFFAOYSA-M 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- -1 garnets Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- LMBFAGIMSUYTBN-MPZNNTNKSA-N teixobactin Chemical compound C([C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H](CCC(N)=O)C(=O)N[C@H]([C@@H](C)CC)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H]1C(N[C@@H](C)C(=O)N[C@@H](C[C@@H]2NC(=N)NC2)C(=O)N[C@H](C(=O)O[C@H]1C)[C@@H](C)CC)=O)NC)C1=CC=CC=C1 LMBFAGIMSUYTBN-MPZNNTNKSA-N 0.000 description 3
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- JGDITNMASUZKPW-UHFFFAOYSA-K aluminium trichloride hexahydrate Chemical compound O.O.O.O.O.O.Cl[Al](Cl)Cl JGDITNMASUZKPW-UHFFFAOYSA-K 0.000 description 2
- 229940009861 aluminum chloride hexahydrate Drugs 0.000 description 2
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 2
- 239000001099 ammonium carbonate Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000000462 isostatic pressing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- SJOQNHYDCUXYED-UHFFFAOYSA-K trichlorolutetium;hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].[Cl-].[Cl-].[Lu+3] SJOQNHYDCUXYED-UHFFFAOYSA-K 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- 206010001497 Agitation Diseases 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010616 electrical installation Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical group [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- KPZSTOVTJYRDIO-UHFFFAOYSA-K trichlorocerium;heptahydrate Chemical compound O.O.O.O.O.O.O.Cl[Ce](Cl)Cl KPZSTOVTJYRDIO-UHFFFAOYSA-K 0.000 description 1
- IINACGXCEZNYTF-UHFFFAOYSA-K trichloroyttrium;hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].[Cl-].[Cl-].[Y+3] IINACGXCEZNYTF-UHFFFAOYSA-K 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical class [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/7716—Chalcogenides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/7721—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7767—Chalcogenides
- C09K11/7769—Oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
Definitions
- the invention relates to phosphor mixtures, processes for the preparation of these mixtures and their use as conversion phosphors or in illuminants.
- LEDs are becoming increasingly important - both as lighting means and when used as backlight in liquid crystal displays (FK displays).
- FK displays liquid crystal displays
- These novel light sources have several advantages over conventional cold cathode fluorescence lamps (CCFL) such as longer life, potential energy savings, absence of harmful ingredients (such as mercury in CCFL).
- pcLEDs phosphor converted LEDs
- backlighting light sources typically include a green phosphor and a deep red phosphor together with the blue light emission of an LED chip corresponding to the transmission spectrums of the color filter (transmission bands in the blue)
- A is one or more elements selected from Y, Gd, Se, Sm, Tb, Pr, Th, Ir, Sb.Bi and
- a stands for a value in the range of 0 to 2,895 and
- x stands for a value in the range of 0.005 to 1
- I stands for a value in the range of 0 to 4.99 and
- Inventive mixtures used in small amounts already give good LED qualities.
- the amounts of phosphor compared to the prior art, in particular of red phosphors with constant LED quality even reduce or the LED quality can be increased if conventional amounts are used.
- the LED quality is described by common parameters such as the Color Rendering Index, Correlated Color Temperature, Lumen Equivalents or Absolute Lumens, or the color point in CIE x and CIE y coordinates.
- the Color Rendering Index is a unitary photometric quantity known to those skilled in the art that provides color fidelity to a color rendering index artificial light source with that of sunlight or and
- Filament light sources compare (the latter two have a CRI of 100).
- the CCT or Correlated Color Temperature is a photometric quantity with the unit Kelvin familiar to the person skilled in the art. The higher the
- Black light emitter whose color temperature is the so-called Planckian curve in the CIE diagram.
- the lumen equivalent is a photometric quantity known to those skilled in the art with the unit Im / W, which describes how large the photometric luminous flux in lumens of a light source is at a certain radiometric radiation power with the unit Watt. The higher the lumen equivalent, the more efficient a light source is.
- the lumen is a photometrical photometric quantity which is familiar to the person skilled in the art and describes the luminous flux of a light source, which is a measure of the total visible radiation emitted by a radiation source. The larger the luminous flux, the brighter the light source appears to be
- CIE x and CIE y stand for the coordinates in the CIE standard color diagram familiar to the person skilled in the art (here standard observer 1931), with which the color of a light source is described.
- Preferred mixtures contain at least one phosphor of the formula I, which is characterized in that a stands for a value from the range from 0 to 0.5, preferably from the range 0 to 0.3 and where
- a 0 to 0.2.
- mixtures which are characterized in that the mixture contains at least one phosphor of the formula I, where x stands for a value from the range of 0.01 to 0.5, preferably from the range 0.015 to 0.2 and in particular preferably from the range 0.02 to 0.1.
- the mixture contains at least one red emitting phosphor.
- red emission or red light such light whose intensity maximum is between 610 nm and 670 nm wavelength, correspondingly green is called such light whose maximum is between 508 nm and 550 nm wavelength and as yellow light whose Maximum lies between 551 nm and 585 nm wavelength.
- the at least one red-emitting phosphor is selected in accordance with the invention preferred mixtures of Ce-doped garnets, Eu-doped Thiogallates, Eu-doped sulfoselenides and Eu- and / or Ce-doped nitrides, oxynitrides, Alumonitriden and / or Mn (IV) doped oxides and / or fluorides.
- the red emitting phosphor is selected from the nitride phosphors, preferably (Ca, Sr, Ba) 2 Si 5 N 8 : Eu, (Ca, Sr) AISiN 3 : Eu, (Ca, Sr, Ba) SiN 2 : Eu, (Ca, Sr, Ba) 6Si 3 O 6 N 4 : Eu, A 2 o, 5y-x Eu x Si 5 N 8-y O y, wherein A is selected from one or more elements from Ca, Sr, Ba and x stands for a value in the range of 0.005 to 1 and y stands for a value from the range of 0.01 to 3 or variants of said compounds, in which individual lattice positions by other chemical elements, such as Alkali metals, aluminum, gallium, or gadolinium, or occupy such other elements as a dopant vacancies.
- A is selected from one or more elements from Ca, Sr, Ba and x stands for a value in the range of 0.005 to 1
- Silicon dioxide and aluminosiliconitrides known to the person skilled in the art see Xie, Sci., Technol. Adv., Mater., 2007, 8, 588-600: 1-1-2-nitrides, such as CaSiN 2 : Eu 2+ (Le Toquin, Cheetham, Chem. Phys. Lett., 2006, 423, 352), 2-5-8-nitrides, such as the (Ca, Sr, Ba) 2 Si 5 N 8 : Eu 2+ (Li et al , Chem. Mater. 2005, 15, 4492) and aluminosiliconitrides such as the (Ca, Sr) AISiN 3 : Eu 2+ (K. Uheda et al., Electrochem., Solid State Lett., 2006, 9, H22).
- 1-1-2-nitrides such as CaSiN 2 : Eu 2+ (Le Toquin, Cheetham, Chem. Phys. Lett., 2006,
- a 2-0 , 5y-x Eu x Si 5 N 8-y O y , wherein A represents one or more elements selected from Ca, Sr, Ba and x represents a value in the range of 0.005 to 1 and y is a value in the range of 0.01 to 3 is described in the patent application EP10000933.1 and is mentioned in the following compound of formula II.
- the compound as a pure substance or in a mixture with at least one other silicon and
- Oxygen-containing compound wherein it is preferred if the at least one further silicon and oxygen-containing compound is a reaction by-product of the preparation of the compound of formula II and this the application-relevant optical properties of
- Embodiments represents a value in the range of 0.01 to 0.8, preferably in the range of 0.02 to 0.7, and more preferably in the range of 0.05 to 0.6, and more preferably in the range of 0.1 to 0.4 and y in preferred embodiments represents a value in the range of 0.1 to 2.5, preferably in the range of 0.2 to 2, and more preferably in the range of 0.22 to 1.8.
- step a) For the preparation of phosphors of the formula II, suitable starting materials selected from binary nitrides, halides and oxides or corresponding reactive forms are mixed in step a) and the mixture is thermally treated in a step b) under reductive conditions. In the above-mentioned thermal treatment, it is preferable that this is carried out at least partially under reducing conditions.
- step b) the reaction is usually carried out at a temperature above 800 C, preferably at a temperature above 1200 ° C and
- the reductive conditions are e.g. adjusted with carbon monoxide, forming gas or hydrogen or at least vacuum or oxygen deficient atmosphere, preferably in a stream of nitrogen, preferably in the N2 / H2 stream and more preferably in the N2 / H2 / NH3 stream.
- Compounds of formula II can be prepared in pure form, this can be done either by careful control of Eduktstöchiometrie or by mechanically separating the crystals of the compounds of formula II from the glassy portions. The separation may, for example, via the
- the at least one phosphor of the formula I and the at least one red-emitting phosphor are usually in the
- the mixture may additionally comprise at least one further of the following phosphor materials:
- Another subject of the invention is a process for the preparation of a phosphor mixture in which at least one phosphor of the formula I is mixed with at least one red-emitting phosphor.
- the particle size of the phosphors according to the invention is
- the particulate phosphors have a closed surface coating consisting of SiO 2 , TiO 2) Al 2 O 3, ZnO , ZrO 2 and / or Y 2 O 3 or mixed oxides thereof.
- This surface coating has the advantage that a suitable gradation of the refractive indices of the coating materials a
- Luminescent decreases and a greater proportion of the light can penetrate into the phosphor and absorbed and converted there.
- Phosphor must be encapsulated. This may be necessary to counter sensitivity of the phosphor or parts thereof to diffusing water or other materials in the immediate environment. Another reason for the encapsulation with a
- closed shell is a thermal decoupling of the actual phosphor from the heat that arises in the chip. This heat leads to a reduction in the fluorescent light output of the phosphor and may also affect the color of the fluorescent light. Finally, it is possible by such a coating to increase the efficiency of the phosphor by preventing lattice vibrations arising in the phosphor from propagating to the environment.
- the phosphors are porous
- Phosphor particles have a surface which carries functional groups, which allows a chemical connection to the environment, preferably consisting of epoxy or silicone resin.
- These functional groups may e.g. oxo group-attached esters or other derivatives which can form linkages with components based on epoxides and / or silicones.
- Such surfaces have the advantage that a homogeneous mixing of the phosphors is made possible in the binder. Furthermore, this can be the
- Theological properties of the system phosphor / binder and also the pot life can be adjusted to a certain extent. This simplifies the processing of the mixtures.
- Phosphor layer preferably consists of a mixture of silicone and homogeneous phosphor particles, which is applied by volume casting, and the silicone has a surface tension, this phosphor layer is not uniform at the microscopic level or the thickness of the layer is not consistently constant. This is usually also the case when the phosphor is not applied by the volume casting method, but in the so-called chip-level conversion method in which a highly concentrated, thin phosphor layer is applied directly to the surface of the chip by means of electrostatic methods. With the help of the above method, any external forms of
- Phosphor particles are produced, such as spherical particles, platelets and structured materials and ceramics.
- platelet-shaped phosphors can be prepared by a natural or synthetically produced highly stable support or a substrate of, for example mica, SiO 2 , Al 2 O 3 , Zr0 2 , glass or Ti0 2 platelets, which is a very large Has aspect ratio, an atomically smooth surface and an adjustable thickness, can be coated by precipitation reaction in aqueous dispersion or suspension with a phosphor layer.
- the platelets may also consist of the phosphor material itself, or be composed of a material. If the plate itself only as a carrier for the
- Phosphor coating is used, it must be made of a material that is transparent to the primary radiation of the LED, or the
- the flake phosphors are dispersed in a resin (e.g., silicone or epoxy) and this dispersion is applied to the LED chip.
- a resin e.g., silicone or epoxy
- the platelet-shaped phosphors can be produced on a large scale in thicknesses of 50 nm up to about 20 ⁇ m, preferably between 150 nm and 5 ⁇ m.
- the diameter is from 50 nm to 20 pm. It usually has an aspect ratio (ratio of diameter to particle thickness) of 1: 1 to 400: 1, and in particular 3: 1 to 100: 1.
- the platelet extent (length x width) depends on the arrangement. Platelets are also suitable as scattering centers within the conversion layer, especially if they have particularly small dimensions.
- the surface of the platelet-shaped phosphor according to the invention facing the LED chip can be provided with a coating which acts in an anti-reflection manner with respect to the primary radiation emitted by the LED chip. This leads to a reduction in the backscattering of the primary radiation, as a result of which it can be better coupled into the phosphor body according to the invention.
- the production of the phosphors according to the invention in the form of ceramic bodies takes place analogously to the process described in DE 102006037730 (Merck), which is incorporated by reference in its entirety into the context of the present application.
- the phosphor is prepared wet-chemically by mixing the corresponding reactants and dopants, then isostatically pressed and applied in the form of a homogeneous thin and non-porous platelets directly on the surface of the chip.
- no location-dependent variation of the excitation and emission of the phosphor takes place, as a result of which the LED equipped with it emits a homogeneous and color-constant light cone and has a high light output.
- Phosphor bodies can be produced industrially, for example, as platelets in thicknesses of a few 100 nm up to about 500 ⁇ m.
- the Platelet expansion depends on the arrangement.
- the size of the chip according to the chip size (from about 100 pm * 100 pm up to several mm 2 ) with a certain excess of about 10% - 30% of the chip surface with a suitable chip arrangement (eg Flip Chip arrangement) or to choose accordingly. If the phosphor plate is placed over a finished LED, the emerging cone of light is completely covered by the plate.
- the side surfaces of the ceramic phosphor body can be mirrored with a light or noble metal, preferably aluminum or silver. The mirroring causes no light to escape laterally from the
- ceramic phosphor body takes place in a process step after the isostatic pressing to bars or plates, which may be done before the mirroring a tailor of the rods or plates in the required size.
- the side surfaces are for this purpose e.g. wetted with a solution of silver nitrate and glucose and then exposed at elevated temperature to an ammonia atmosphere.
- a silver coating on the side surfaces e.g. a silver coating on the side surfaces.
- electroless metallization processes are also suitable, see, for example, Hollemann-Wiberg, Lehrbuch der Anorganischen Chemie, Walter de Gruyter Verlag or Ulimann's Encyclopedia of Chemical Technology.
- the ceramic phosphor body may, if necessary, with a
- Waterglass solution to be fixed on the substrate of an LED chip.
- the ceramic has
- a structured (eg pyramidal) surface is coupled out of the phosphor body.
- the structured Surface on the phosphor body is thereby produced, in which during isostatic pressing, the pressing tool has a structured pressing plate and thereby embosses a structure in the surface. Structured surfaces are desired when thin phosphor bodies or platelets are to be produced.
- the excitability of the phosphors according to the invention also extend over a wide range, ranging from about 410 nm to 530 nm, preferably 430 nm to about 500 nm.
- these phosphors are not only suitable for excitation by UV or blue emitting primary light sources such as LEDs or conventional discharge lamps (eg based on Hg), but also for light sources such as those which exploit the blue ln 3+ line at 451 nm.
- Another object of the present invention is a light source with at least one primary light source, characterized in that the light source contains at least one phosphor according to formula I and at least one red emitting phosphor. Preferably, this is
- Lighting unit emits white or emits light with a specific color point (color-on-demand principle).
- the primary light source is a luminescent one
- Indiumaluminum gallium nitride in particular the formula
- the primary light source is a luminescent arrangement based on ZnO, TCO (transparent conducting oxide), ZnSe or SiC or else an arrangement based on an organic light-emitting layer (OLED).
- the primary light source is a source which exhibits electroluminescence and / or photoluminescence.
- the primary light source can also be a plasma or discharge source.
- the phosphors of the present invention may be dispersed either in a resin (e.g., epoxy or silicone resin) or in suitable ones
- the phosphors are arranged on the primary light source such that the red emitter phosphor is substantially illuminated by light from the primary light source, while the phosphor according to formula I is substantially illuminated by light which has already passed the red emitting phosphor or was scattered by this. In a preferred embodiment this becomes realized by the red emitting phosphor between the primary light source and the phosphor according to formula I is attached.
- LC display liquid crystal display
- Backlight which are characterized in that they contain at least one such lighting unit.
- the optical coupling of the illumination unit between the phosphor and the primary light source is realized by a light-conducting arrangement.
- the primary light source is installed at a central location and this by means of light-conducting devices, such as
- the lighting requirements adapted lights can only consist of one or
- different phosphors which may be arranged to form a luminescent screen, and a light guide, which is connected to the primary light source
- Another object of the present invention is the use of the phosphors according to the invention for the partial or complete conversion of blue or in the near UV emission of a light-emitting diode. Further preferred is the use of the invention
- Phosphors for conversion of blue or near UV emission into visible white radiation. Furthermore, the use of the phosphors according to the invention for converting the primary radiation into a specific color point according to the "color on demand" concept is preferred.
- Another object of the present invention is the use of the phosphors according to the invention in electroluminescent materials, such as electroluminescent films (also called phosphors or light foils) in which, for example, zinc sulfide or zinc sulfide doped with Mn 2+ , Cu + , or Ag + as an emitter is used, which emit in the yellow-green area.
- electroluminescent materials such as electroluminescent films (also called phosphors or light foils) in which, for example, zinc sulfide or zinc sulfide doped with Mn 2+ , Cu + , or Ag + as an emitter is used, which emit in the yellow-green area.
- Electroluminescent films are e.g. Advertising, display backlighting in liquid crystal displays (LC displays) and
- TFT displays Thin-film transistor displays
- self-illuminating license plate labels floor graphics (in conjunction with a non-slip and non-slip laminate), in display and / or control elements
- the precipitate is precalcined for 3 hours at 1100 ° C in air and then reductively calcined at 1700 ° C for 6 hours.
- 387 g of ammonium bicarbonate are dissolved within 1 h in 4.3 liters of deionized water.
- 148 g of aluminum chloride hexahydrate, 135 g of lutetium chloride hexahydrate, and 0.86 g of cerium chloride heptahydrate are dissolved in 2.71 VE water and added dropwise to the bicarbonate solution within 0.75 h.
- the bicarbonate solution is adjusted to pH 8.
- the resulting precipitate is filtered off with suction and washed. It is then dried and transferred to an oven.
- the precipitate is precalcined for 3 hours at 1100 ° C in air and then reductively calcined at 1700 ° C for 6 hours.
- Silica are weighed in a nitrogen-filled glove box and mixed. The resulting mixture is placed in a boron nitride crucible and transferred to a tube furnace. Subsequently, the mixture is calcined at 1600 ° C for 8 hours under a nitrogen / hydrogen atmosphere. After cooling, the crude phosphor is removed, briefly crushed and filled again in a molybdenum crucible, which is then transferred to a high-pressure furnace. In this, the phosphor is again calcined for 8 hours at 1600 ° C under a nitrogen pressure of 65 bar. After cooling, the phosphor is removed and suspended in 100 ml of deionized water. The resulting suspension is stirred for 30 minutes, then the stirrer is switched off. After a few minutes, the supernatant is poured off and the remaining residue is again poured into PE. Water was added, filtered with suction, washed neutral with demineralized water and dried.
- the phosphor is again calcined for 8 hours at 1600 ° C under a nitrogen pressure of 65 bar. After cooling, the phosphor is removed and suspended in 100 ml of deionized water. The resulting suspension is stirred for 30 minutes, then the stirrer is switched off. After a few minutes, the supernatant is poured off, the residue remaining is again taken up in demineralized water, filtered off with suction, washed neutral with demineralized water and dried.
- Silica are weighed in a nitrogen-filled glove box and mixed. The resulting mixture is placed in a boron nitride crucible and transferred to a tube furnace. Subsequently, the mixture is calcined at 1600 ° C for 8 hours under a nitrogen / hydrogen atmosphere. After cooling, the crude phosphor is removed, briefly crushed and filled again in a molybdenum crucible, which then in a High pressure furnace is transferred. In this, the phosphor is again calcined for 8 hours at 1600 ° C under a nitrogen pressure of 65 bar. After cooling, the phosphor is removed and suspended in 100 ml of deionized water. The resulting suspension is stirred for 30 minutes, then the stirrer is switched off.
- the phosphor is removed and suspended in 100 ml of deionized water. The resulting suspension is stirred for 30 minutes, then the stirrer is switched off. After a few minutes, the supernatant is poured off, the residue remaining is again taken up in demineralized water, filtered off with suction, washed neutral with demineralized water and dried.
- Example 2E Preparation of the phosphor (Sr, Ca) AISiN 3 : Eu 2.22 g Sr 3 N 2 , 0.33 g Ca 3 N 2 , 0.05 g EuN, 1, 23 g AIN and 1, 4 g silicon nitride Weighed in a nitrogen-filled glove box and mixed. The resulting mixture is placed in a boron nitride crucible and transferred to a hot isostatic press (HIP). It became one
- Example 1 B and 2A or 1 B and 2B or 1B and 2C or 1B and 2E. Analogously, a mixture containing the phosphors of Example 1 B and 2A or 1 B and 2B or 1B and 2C or 1B and 2E. produced.
- Example 4 Production of a Light-emitting Diode (“LuAG Nitride”)
- the phosphor mixture from Example 3.1 is mixed in a tumble mixer with a 2-component silicone (OE 6550 from. Dow Corning), so that equal amounts of the phosphor mixture in the two
- Components of the silicone are dispersed; the total concentration of the phosphor mixture in the silicone is 8% by weight.
- LED packages from the company OSA optoelectronics, Berlin, which contain a 100 ⁇ 2 large GaN chip, filled. Thereafter, the LEDs are placed in a heat chamber to solidify the silicone for 1 h at 50 ° C.
- the phosphor mixture from Example 3.2 is mixed in a tumble mixer with a 2-component silicone (OE 6550 Fa. Dow Corning), so that equal amounts of the phosphor mixture in the two
- Components of the silicone are dispersed; the total concentration of the phosphor mixture in the silicone is 5% by weight.
- CRI Color Rendering Index
- Color fidelity of an artificial light source compares to that of sunlight or filament light sources (the latter two have a CRI of 100).
- CCT stands for the so-called “Correlated Color Temperature”, this is a familiar with the expert, photometric quantity with the unit Kelvin. The higher the numerical value, the colder the viewer sees the white light of an artificial radiation source.
- the CCT follows the concept of
- Black light emitter whose color temperature is the so-called Planckian curve in the CIE diagram.
- the lumen equivalent is a photometric quantity known to the expert with the unit Im / W, which describes how large the photometric
- radiometric radiant power with the unit watts is.
- the lumen is a photometric one familiar to those skilled in the art
- CIE x and CIE y stand for the coordinates in the CIE standard color diagram familiar to the person skilled in the art (here standard observer 1931), with which the color of a light source is described.
- the composition of the phosphor mixture in the "LuAG nitride" LED is 0 mass fractions LuAG LGA 553 100: 1 mass fraction nitride
- the concentration of the phosphor mixture in the LED is 8 wt% (in the silicone)
- the composition of the phosphor mixture in the "LuGaAG -Nitride is 6 mass fractions LuGaAG: 1 mass fraction nitride.
- the concentration of the phosphor mixture in the LED is 5 wt% (in the silicone). That despite lower phosphorus use concentration (here:
- the phosphor from Example 1A or the phosphor from Example 1 B is mixed in a tumble mixer with a 2-component silicone (OE 6550 Fa. Dow Corning), so that equal amounts of
- Phosphor mixture are dispersed in the two components of the silicone.
- concentration of the green phosphor in the silicone is 5% by weight of LuGaAG (Pre-Mix A1) or 8% by weight of LuAG (Pre-Mix A2).
- the red-emitting from Example 2A or 2B or 2C is mixed in each case in a tumble mixer with a 2-component silicone (OE 6550 from Dow Corning), so that equal amounts of the phosphor mixture are dispersed in the two components of the silicone.
- the concentration of the red phosphor in the silicone is 1% by weight (Pre-Mix B1 - Pre-Mix B3).
- FIG. 2 emission spectra of the light-emitting diodes from examples 4 and 5.
- the emission measurement was performed with an Instrument Systems CAS 140 spectrometer in an integration sphere from the company Instrument Systems ISP
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Abstract
Description
Claims
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US13/699,069 US20130063926A1 (en) | 2010-05-22 | 2011-04-26 | Phosphors |
EP11718291.5A EP2576725B1 (de) | 2010-05-22 | 2011-04-26 | Leuchtstoffe |
KR1020127033548A KR101769175B1 (ko) | 2010-05-22 | 2011-04-26 | 발광성 물질 |
JP2013511561A JP2013529244A (ja) | 2010-05-22 | 2011-04-26 | 発光物質 |
CN201180024944.7A CN102906222B (zh) | 2010-05-22 | 2011-04-26 | 发光物质 |
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DE102010021341A DE102010021341A1 (de) | 2010-05-22 | 2010-05-22 | Leuchtstoffe |
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JP (1) | JP2013529244A (de) |
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Also Published As
Publication number | Publication date |
---|---|
CN102906222A (zh) | 2013-01-30 |
EP2576725A1 (de) | 2013-04-10 |
EP2576725B1 (de) | 2015-02-25 |
US20130063926A1 (en) | 2013-03-14 |
KR101769175B1 (ko) | 2017-08-17 |
JP2013529244A (ja) | 2013-07-18 |
DE102010021341A1 (de) | 2011-11-24 |
CN102906222B (zh) | 2016-05-11 |
KR20130122530A (ko) | 2013-11-07 |
TWI547545B (zh) | 2016-09-01 |
TW201144411A (en) | 2011-12-16 |
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