US6022268A - Polishing pads and methods relating thereto - Google Patents
Polishing pads and methods relating thereto Download PDFInfo
- Publication number
- US6022268A US6022268A US09/054,948 US5494898A US6022268A US 6022268 A US6022268 A US 6022268A US 5494898 A US5494898 A US 5494898A US 6022268 A US6022268 A US 6022268A
- Authority
- US
- United States
- Prior art keywords
- polishing
- pad
- accordance
- texture
- macro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
- B24B41/047—Grinding heads for working on plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
- B24D13/142—Wheels of special form
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/22—Rubbers synthetic or natural
- B24D3/26—Rubbers synthetic or natural for porous or cellular structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
Definitions
- the present invention relates generally to polishing pads useful in the manufacture of semiconductor devices or the like. More particularly, the polishing pads of the present invention comprise an advantageous hydrophilic material having an innovative surface topography and texture which generally improves polishing performance (as well as the predictability of polishing performance).
- Integrated circuit fabrication generally requires polishing of one or more substrates, such as silicon, silicon dioxide, tungsten, copper or aluminum. Such polishing is generally accomplished, using a polishing pad in combination with a polishing fluid.
- U.S. Pat. No. 5,569,062 describes a cutting means for abrading the surface of a polishing pad.
- U.S. Pat. No. 5,081,051 describes an elongated blade having a serrated edge pressing against a pad surface, thereby cutting circumferential grooves into the pad surface.
- U.S. Pat. No. 5,489,233 is directed to a polishing pad having large and small flow channels produced solely by external means upon the surface of a solid uniform polymer sheet.
- the present invention is directed to polishing pads having an innovative hydrophilic polishing layer and also an innovative polishing surface topography and texture.
- Topicography is intended to mean surface characteristics on a scale of less than 10 microns
- surface texture is intended to mean surface characteristics of 10 microns or more.
- the polishing pads of the present invention comprise a random surface topography.
- the random surface topography is preferably achieved by solidifying or otherwise forming (without cutting) the polishing surface, rather than cutting or skiving the pad from a larger material.
- Cutting or skiving causes a blade or other cutting implement to cut substantially parallel to the polishing surface being formed; such cutting tends to create a non-random surface topography, because as the blade cuts the polishing surface, it scores the surface or otherwise causes a pattern on the surface; this pattern generally indicates the direction of cutting.
- Micro-defects are intended to mean burrs or other protrusions from the polishing surface of the pad which have a dimension (either width, height or length) of greater than 25 microns. Such macro-defects are detrimental to polishing and can cause performance variations between pads, because although the cutting process may be substantially the same for each pad, as the cutting instrument dulls, the amount of macro-defects created by the cutting instrument generally increases. Other factors which can cause variability in macro-defects during cutting include ambient temperature, and line speed variations.
- Micro-asperities are intended to mean burrs or other protrusions from the polishing surface of the pad which have a dimension (either width, height or length) of less than 10 microns. It has been surprisingly discovered that micro-asperities are generally advantageous in precision polishing, particularly in the manufacture of semi-conductor devices.
- the polishing materials of the present invention have no intrinsic ability to absorb or transport slurry particles, and therefore the present invention does not include felt-based polishing pads created by coalescing a polymer onto a fiber substrate, as described in U.S. Pat. No. 4,927,432 to Budinger, et al.
- the polishing materials of the present invention comprise a hydrophilic material having: i. a density greater than 0.5g/cm 3 ; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of 0.02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30° C. to tensile modulus at 60° C.
- the polishing layer further comprises a plurality of soft domains and hard domains.
- the present invention is innovative, because: 1. it recognizes the detrimental effects of macro-defects for precision polishing, while also recognizing the benefits of micro-asperities; 2. the present invention also recognizes how macro-defects generally occur in polishing pads; and 3. the present invention teaches how to manufacture polishing pads having advantageously low levels of macro-defects but advantageously high levels of micro-asperities. None of these aspects of the present invention were heretofore appreciated in the art and are truly a significant contribution to the art of precision polishing.
- the pads of the present invention have a relatively low level of macro-defects, because the polishing surfaces are not created by cutting or skiving, but rather, are created by solidifying or otherwise forming the polishing surface without cutting.
- the polishing surface of the pads of this invention has, on average, less than 2 observable macro-defects per square millimeter of polishing surface when viewed at a magnification of 1000 ⁇ .
- the polishing layers of the present invention are manufactured by: 1. molding, embossing, printing, casting, sintering, photo-imaging, chemical etching, solidifying or otherwise creating pads without cutting the pad from a larger material; and 2. applying at least a portion of a macro-texture onto (or into) the polishing surface without cutting (or similar-type fracturing of) the polishing surface.
- the method(s) of the present invention are directed to causing a flowable material to form (without cutting) a macro-textured into or onto a surface (and optionally also forming a micro-texture) or alternatively (or in addition) thereafter inducing a macro-texture upon the polishing surface without cutting or similar type fracturing of the polishing surface, such as, by embossing.
- additional macro-texture and/or micro-texture
- the present invention is directed to an improved polishing pad useful in the polishing or planarizing of substrates, particularly substrates for the manufacture of semiconductor devices or the like.
- the compositions and methods of the present invention may also be useful in other industries and can be applied to any one of a number of materials, including but not limited to silicon, silicon dioxide, metal, dielectrics (including polymeric dielectrics), ceramics and glass.
- Macro defects large surface defects of 25 microns or more due to fractures, abrasions and/or similar-type surface irregularities, generally arising from the cutting of a macro-texture into a pad
- micro asperities small surface protrusions of 10 microns or less due to surface fractures, abrasion and/or similar-type surface irregularities, generally arising from the cutting of a micro-texture into a pad.
- Macro-texture and micro-texture provide very different functions for a polishing pad.
- the macro-texture provides a passageway (or a series of passageways) for distributing polishing fluid along the pad surface.
- the micro-texture can be very similar to the macro-texture, but on a much smaller scale.
- the micro-texture is on a scale similar to that of the surface protrusions being polished away.
- the micro-texture provides an environment which enhances interaction between: 1. the polishing fluid and/or polishing particles; and 2. the protrusions to be polished away.
- the present invention is innovative in its recognition that: 1. micro-asperities are generally beneficial to the polishing performance of a pad; and 2. macro-defects are generally detrimental to polishing performance of a pad.
- the present invention is also innovative in addressing the adverse affects of macro-defects--by solidifying or otherwise forming or molding at least a portion of the macro-texture into or onto the polishing surface, macro-defects are dramatically reduced and pad performance is improved, relative to conventional pads produced by cutting a macro-texture into a pad.
- the number of macro-defects can be dependent upon the sharpness of the cutting tool, line speed, ambient temperature/humidity and the like. This will tend to cause pad-to-pad variation in macro-defects which in turn will cause pad-to-pad variation in polishing performance.
- the pads of the present invention comprise a polishing layer having an outer surface.
- Preferred processes in accordance with the present invention include: 1. thermoplastic injection molding, 2. thermoset injection molding (often referred to as “reaction injection molding” or “RIM”), 3. thermoplastic or thermoset injection blow molding, 4. compression molding, or 5. any similar-type process in which a flowable material is positioned and solidified, thereby creating at least a portion of a pad's macro-texture.
- RIM reaction injection molding
- thermoplastic or thermoset injection blow molding 4. compression molding, or 5. any similar-type process in which a flowable material is positioned and solidified, thereby creating at least a portion of a pad's macro-texture.
- the flowable material is forced into or onto a structure or substrate; 2. the structure or substrate imparts a surface texture into the material as it solidifies; and 3. the structure or substrate is thereafter separated from the solidified material.
- a solid or semi-solid insert is first placed in an enclosure, and the flowable material is then forced into the enclosure, thereby causing the insert to be bonded to or within the material after it has solidified.
- the insert can provide reinforcement to the pad so that the solidified material around the insert need not be self-supporting or otherwise of a consistency necessary to support the polishing layer.
- the insert can provide structural integrity to the pad, thereby providing improved performance, longevity and/or greater flexibility in manufacturing.
- the polishing layer surface is far less disturbed or damaged (relative to machining); therefore the pads of the present invention will exhibit fewer macro-defects, and pad polishing performance and predictability of pad performance, are generally improved.
- the molding of the present invention involves an average mold aspect ratio of at least 400, more preferably at least 500 and yet more preferably greater than 700.
- the "aspect ratio" is intended to mean a selected length divided by the average thickness of the pad.
- polishing pads have been manufactured by other manufacturing operations, such as by coagulating polymer onto felt substrates or by casting a polymeric material into cakes (which are then skived to produce a polishing pad), because the advantages of the present invention have not been appreciated by those of ordinary skill in the art.
- compositions of the present invention can be molded in accordance with the present invention to provide polishing pads which are able to satisfy needs which are not otherwise obtainable with common prior art pad manufacturing processes.
- the pads of the present invention are generally more precise and reproducible, relative to many conventional pad manufacturing processes.
- Pads are generally conditioned prior to use.
- the conditioning creates or augments the micro-texture of the pad.
- the micro-texture can experience unwanted plastic flow and can be fouled by debris.
- pads are generally re-conditioned periodically during their useful life to regenerate an optimal micro-texture.
- the polishing pads of the present invention require less re-conditioning during use, relative to conventional polishing pads.
- the pad's macro-structure is incorporated into the surface of the polishing layer, due to the presence of mold protrusions around which pad material initially flows and solidifies.
- the macro-texture can be simultaneously created along the polishing layer's outer surface as the pad material solidifies.
- the macro-texture preferably comprises one or more indentations having an average depth and/or width of greater than 0.01, more preferably 0.05 and yet more preferably 0.1 millimeters. This macro-texture facilitates the flow of polishing fluid and thereby enhances polishing performance.
- a preferred process of the present invention is directed to injection molding, particularly "reaction injection molding” or “RIM”.
- RIM generally involves mixing reactive liquid (or semi-liquid) precursors which are then rapidly injected into the mold. Once the mold is filled, the reactive precursors proceed with a chemical reaction, causing solidification of a final molded product.
- This type of injection molding is most preferred, because the pad's physical properties can be fine tuned by adjusting the reactive chemistry.
- reaction injection molding generally uses lower viscosity precursors than thermoplastic injection molding, thereby allowing for easier filling of high aspect ratio molds.
- Urethane prepolymers are a preferred reactive chemistry for reaction injection molding in accordance with the present invention.
- Prepolymers are intended to mean any precursor to the final polymerized product, including oligomers or monomers. Many such prepolymers are well known and commercially available.
- Urethane prepolymers generally comprise reactive moieties at the ends of the prepolymer chains.
- a common reactive moiety for a urethane prepolymer is isocyanate.
- Commercially available isocyanate prepolymers include di-isocyanate prepolymers and tri-isocyanate prepolymers. Examples of di-isocyanate polymers include toluene diisocyanate and methylene diisocyanate.
- the isocyanate prepolymer preferably comprises an average isocyanate functionality of at least two. An average isocyanate functionality greater than 4 is generally not preferred, since processing can become difficult, depending upon the molding equipment and process being used.
- the isocyanate prepolymer is generally reacted to a second prepolymer having an isocyanate reactive moiety.
- the second prepolymer comprises, on average, at least two (2) isocyanate reactive moieties.
- Isocyanate reactive moieties include amines, particularly primary and secondary amines, and polyols; preferred prepolymers include diamines, diols and hydroxy functionalized amines.
- abrasive particles may be incorporated into the pad material.
- De-watered polishing fluid or any precursor to a polishing fluid may be incorporated into the pad, whereby during polishing, as water is placed within the polishing interface and the pad wears, the pad provides constituents to create or improve the polishing fluid.
- any prepolymer chemistry however could be used in accordance with the present invention, including polymer systems other than urethanes, provided the final product exhibits the following properties: a density of greater than 0.5 g/cm 3 , more preferably greater than 0.7 g/cm 3 and yet more preferably greater than about 0.9 g/cm 3 ; a critical surface tension greater than or equal to 34 milliNewtons per meter; a tensile modulus of 0.02 to 5 GigaPascals; a ratio of the tensile modulus at 30° C. to the modulus at 60° C.
- a catalyst is often necessary to decrease the polymerization reaction time, particularly the gel time and the de-mold time. However, if the reaction is too fast, the material may solidify or gel prior to complete filling of the mold. Gel time is preferably in the range of a half second and one hour, more preferably in the range of about 1 second and about 5 minutes, more preferably 10 seconds to 5 minutes, and yet more preferably 30 seconds to 5 minutes.
- Preferred catalysts are devoid of transition metals, particularly zinc, copper, nickel, cobalt, tungsten, chromium, manganese, iron, tin, or lead.
- the most preferred catalyst for use with a urethane prepolymer system comprises a tertiary amine, such as, diazo-bicyclo-octane.
- Other useful catalysts include, organic acids, primary amines and secondary amines, depending upon the particular reactive chemistry chosen.
- the pad material is sufficiently hydrophilic to provide a critical surface tension greater than or equal to 34 milliNewtons per meter, more preferably greater than or equal to 37 and most preferably greater than or equal to 40 milliNewtons per meter.
- Critical surface tension defines the wettability of a solid surface by noting the lowest surface tension a liquid can have and still exhibit a contact angle greater than zero degrees on that solid. Thus, polymers with higher critical surface tensions are more readily wet and are therefore more hydrophilic.
- Critical Surface Tension of common polymers are provided below:
- the pad matrix is derived from at least:
- Preferred pad materials comprise urethane, carbonate, amide, sulfone, vinyl chloride, acrylate, methacrylate, vinyl alcohol, ester or acrylamide moieties.
- the pad material can be porous or non-porous.
- the matrix is non-porous; in another embodiment, the matrix is non-porous and free of fiber reinforcement.
- the polishing layer material comprises: 1. a plurality of rigid domains which resists plastic flow during polishing; and 2. a plurality of less rigid domains which are less resistant to plastic flow during polishing.
- the rigid phase size in any dimension is preferably less than 100 microns, more preferably less than 50 microns, yet more preferably less than 25 microns and most preferably less than 10 microns.
- the non-rigid phase is also preferably less than 100 microns, more preferably less than 50 microns, more preferably less than 25 microns and most preferably less than 10 microns.
- Preferred dual phase materials include polyurethane polymers having a soft segment (which provides the non-rigid phase) and a hard segment (which provides the rigid phase). The domains are produced during the forming of the polishing layer by a phase separation, due to incompatibility between the two (hard and soft) polymer segments.
- Hard and soft domains within the pad material can also be created: 1. by hard and soft segments along a polymer backbone; 2. by crystalline regions and non-crystalline regions within the pad material; 3. by alloying a hard polymer with a soft polymer; or 4. by combining a polymer with an organic or inorganic filler.
- Useful such compositions include copolymers, polymer blends interpenetrating polymer networks and the like.
- the pads of the present invention are preferably side-filled by injecting the pad material into the mold at a point along the periphery of the mold. Pads may also be center filled by injecting flowable material into the mold at or near the geometric center of a mold face.
- a preferred method of creating the macro-channels or macro-indentations is by molding, particularly injection molding, whereby the macro-texture is formed in situ by one or more thin-walled protrusions extending into the mold.
- the mold protrusions preferably provide an inverted image which is complementary to the intended macro-texture design or configuration.
- Injection molding is a well known technology and need not be described further here.
- the macro-indentation(s) is(are) useful in providing large flow channels for the polishing fluid, during the polishing operation.
- An agent comprising a wax, hydrocarbon or other solid, semi-solid or liquid organic material can be applied to the mold to enhance release of the molded part after molding.
- a preferred mold release agent comprises a solid organic material and a solvent or liquid carrier.
- a particularly preferred mold release agent is a fluorocarbon dispersion, available from E. I. du Pont de Nemours and Company, Wilmington, Del., USA.
- Preferred solvents or liquid carrier materials have a vapor pressure in the range of 0.1 to 14.7 pounds per square inch (“psi"), more preferably 1-12 psi and yet more preferably in the range of 4.5 to 5.5 psi.
- a wax, hydrocarbon or other non-polar solid organic material is dissolved or suspended in an organic solvent, preferably a non-polar organic solvent, such as mineral spirits, and applied as a mold release agent prior to the injection operation.
- an organic solvent preferably a non-polar organic solvent, such as mineral spirits
- an internal mold release agent can be used, which is incorporated directly into the pad material and aids in de-molding the pad after pad manufacture.
- Pad surface topography is relatively consistent for pads of the present invention, because the mold surface remains generally the same for each pad produced by it. Pads produced by many conventional methods are generally more prone to variations and inconsistencies. Predictability of performance is an important aspect of a precision polishing pad. Pad consistency allows for more exacting standard operating procedures and therefore more productive (and reproducible) polishing operations.
- the outer surface can be further modified by adding a micro-texture.
- the micro-texture is preferably created by moving the polishing layer surface against the surface of an abrasive material.
- the abrasive material is a rotating structure (the abrasive material can be round, square, rectangular, oblong or of any geometric configuration) having a plurality of rigid particles embedded (and preferably, permanently affixed) upon the surface. The movement of the rigid particles against the pad surface causes the pad surface to undergo plastic flow, fragmentation or a combination thereof (at the point of contact with the particles).
- the abrasive surface need not rotate against the pad surface; the abrasive surface can move against the pad in any one of a number of ways, including vibration, linear movement, random orbitals, rolling or the like.
- the resulting plastic flow, fragmentation or combination thereof creates a micro-texture upon the pad's outer surface.
- the micro-texture can comprise a micro-indentation with a micro-protrusion adjacent to at least one side.
- the micro-protrusions provide at least 0.1 percent of the surface area of the pad's polishing surface, and the micro-indentations have an average depth of less than 50 microns, more preferably less than 10 microns, and the micro-protrusions have an average height of less than 50 microns and more preferably less than 10 microns.
- such surface modification with an abrasive surface will cause minimal abrasion removal of the polishing layer, but rather merely plows furrows into the pad without causing a substantial amount, if any, of pad material to separate from the polishing layer.
- abrasion removal of pad material is acceptable, so long as a micro-texture is produced.
- micro-indentations or micro-protrusions may also be created during the molding process by incorporation of appropriate features into the mold. Formation of micro-texture and macro-texture during the fabrication of the pad can diminish or even negate the necessity of preconditioning break-in. Such formation also provides more controlled and faithful replication of the micro-texture as compared to surface modification subsequent to pad creation.
- the pads of the present invention are preferably used in combination with a polishing fluid, such as a polishing slurry, for such processes as chemical mechanical polishing of a metal, silicon or silicon dioxide substrate.
- a polishing fluid such as a polishing slurry
- the polishing fluid is placed between the pad's polishing surface and the substrate to be polished.
- the micro-indentations allow for improved polishing fluid flow along the interface (between the pad and the substrate to be polished).
- the improved flow of polishing fluid generally allows for more efficient and effective polishing performance.
- the substrate and the polishing layer are pressed against each other, most usually using a pressure between the substrate and the polishing layer of greater than 0.1 kilograms per square meter.
- Polishing fluids which may be used with the pads of the present invention include, but are not limited to, slurries comprising submicron abrasives for use in the chemical-mechanical polishing of semiconductor wafers.
- abrasives which may be used in these slurries are silica, alumina, titania, ceria, and other metal oxides and nitrides.
- Examples of commercial slurries for use in the polishing of semiconductor wafers are MSW1500, ILD1200, ILD1300, and MSW2000 available from Rodel, Inc., Newark, Del. Silica slurries for the polishing of silicon are also available from Rodel, Inc.
- silica slurries such as Klebasol® 30N50 pHN, 30N50, 30N25, 30N12, 1501, 1508, and 1498, are available from Solution Technology, Inc., Monroe, N.C. All of these slurries may be useful in combination with the pads of the present invention.
- the macro-texture is less prone to macro-defects, such as burrs or protrusions. This has been found to improve polishing pad performance by providing a polishing surface having very low levels of macro-defects and by substantially diminishing debris trapped in the macro-indentations that would otherwise inhibit the flow of polishing fluid.
- the pads of the present invention are preferably attached to a platen and then brought sufficiently proximate with a workpiece to be polished or planarized. Surface irregularities are removed at a rate which is dependent upon a number of parameters, including: pad pressure on the workpiece surface (or vice versa); the speed at which the pad and workpiece move in relation to one another; and the components of the polishing fluid.
- the micro-texture can experience abrasion removal or plastic flow (the micro-protrusions are flattened or are otherwise less pronounced), which can diminish polishing performance.
- the micro-protrusions are then preferably re-formed with further conditioning, such as by moving the pad against an abrasive surface again and causing the material to once again form furrows.
- Such reconditioning is generally not as rigorous and/or not required as often for pads of the present invention, relative to may common prior art pads.
- the preferred abrasive surface for conditioning is a disk which is preferably metal and which is preferably embedded with diamonds of a size in the range of 1 micron to 0.5 millimeters.
- the pressure between the conditioning disk and the polishing pad is preferably between 0.1 to about 25 pounds per square inch.
- the disk's speed of rotation is preferably in the range of 1 to 1000 revolutions per minute.
- a preferred conditioning disk is a four inch diameter, 100 grit diamond disk, such as the RESITM Disk manufactured by R. E. Science, Inc. Optimum conditioning was attained when the downforce was 10 lbs per square inch, platen speed was 75 rpm, the sweep profile was bell-shaped, the number of preconditioning break-in sweeps was 15 and the number of replenishing conditioning sweeps between wafers was 15.
- conditioning can be conducted in the presence of a conditioning fluid, preferably a water based fluid containing abrasive particles.
- the polishing fluid is preferably water based and may or may not require the presence of abrasive particles, depending upon the composition of the polishing layer.
- a polishing layer comprising abrasive particles may not require abrasive particles in the polishing fluid.
- Examples 1 and 2 are comparative examples.
- Example 3 illustrates the present invention.
- a polymeric matrix was prepared by mixing 2997 grams of polyether-based liquid urethane with 768 grams of 4,4-methylene-bis-chloroaniline at about 150° F. At this temperature, the urethane/polyfunctional amine mixture has a pot life of about 2.5 minutes; during this time, about 69 grams of hollow elastic polymeric microspheres were blended at 3450 rpm using a high shear mixer to evenly distribute the microspheres in the mixture. The final mixture was transferred to a conventional mold and permitted to gel for about 15 minutes.
- the mold was then placed in a curing oven and cured for about 5 hours at about 200° F.
- the mixture was then cooled for about 4-6 hours, until the mold temperature was about 70° F.
- the molded article was then "skived” into thin sheets and macro-channels mechanically machined into the surface. The machining process produced jagged, irregular grooves with surface burrs.
- a four inch diameter, 100 grit diamond disk was used to produce micro-channels and micro-protrusions on the surface of the pad.
- the disk was a RESITM Disk manufactured by R. E. Science, Inc. Conditioning was accomplished with a downward force of about 10 lbs., a platen speed of 75 rpm, a bell-shaped sweep profile, and about 15 sweeps.
- Example 2 used the same manufacturing process as Example 1 but the polyurethane was unfilled. By eliminating the filler, the pad properties are generally more reproducible; however, since the pads are now harder, machining problems are found to be greater.
- polyurethane formulations similar to those used in Examples 1 and 2 were formed into a pad by injection molding into a mold having the complementary final dimensions and groove design of the desired pad. This is a net-shape process, eliminating the need for separate skiving and grooving operations.
- the resultant pads of this example had less part-to-part variability in thickness and groove dimensions, and the grooves were substantially free of macro-defects (e.g., burrs).
- macro-defects e.g., burrs.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
______________________________________ Critical Surface Polymer Tension (mN/m) ______________________________________ Polytetrafluoroethylene 19 Polydimethylsiloxane 24 Silicone Rubber 24 Polybutadiene 31 Polyethylene 31 Polystyrene 33 Polypropylene 34 Polyester 39-42 Polyacrylamide 35-40 Polyvinyl alcohol 37 Polymethyl methacrylate 39 Polyvinyl chloride 39 Polysulfone 41 Nylon 6 42 Polyurethane 45 Polycarbonate 45 ______________________________________
______________________________________ Modulus Ratio E (30° C.): Pad Type/Parameter Pad Lifetime Defectivity F (60° C.) ______________________________________ Example 1: 300 wafers baseline 2.0-2.5 Example 2: 400 wafers 5x baseline 2.0-2.5 Example 3: Present 1200 wafers 0.1x baseline 1.3-2.0 Invention ______________________________________
Claims (21)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/054,948 US6022268A (en) | 1998-04-03 | 1998-04-03 | Polishing pads and methods relating thereto |
US09/465,566 US6217434B1 (en) | 1997-04-04 | 1999-12-17 | Polishing pads and methods relating thereto |
US09/514,717 US6287185B1 (en) | 1997-04-04 | 2000-02-28 | Polishing pads and methods relating thereto |
US09/711,008 US6682402B1 (en) | 1997-04-04 | 2000-11-10 | Polishing pads and methods relating thereto |
US09/717,470 US6293852B1 (en) | 1997-04-04 | 2000-11-21 | Polishing pads and methods relating thereto |
US09/848,894 US6648733B2 (en) | 1997-04-04 | 2001-05-04 | Polishing pads and methods relating thereto |
US09/862,734 US6425816B1 (en) | 1997-04-04 | 2001-05-22 | Polishing pads and methods relating thereto |
US10/137,056 US6739962B2 (en) | 1997-04-04 | 2002-05-01 | Polishing pads and methods relating thereto |
US10/660,250 US6843712B2 (en) | 1997-04-04 | 2003-09-11 | Polishing pads and methods relating thereto |
US10/659,889 US6869350B2 (en) | 1997-04-04 | 2003-09-11 | Polishing pads and methods relating thereto |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/054,948 US6022268A (en) | 1998-04-03 | 1998-04-03 | Polishing pads and methods relating thereto |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12930198A Continuation | 1997-04-04 | 1998-08-05 | |
US09/465,566 Continuation US6217434B1 (en) | 1997-04-04 | 1999-12-17 | Polishing pads and methods relating thereto |
Publications (1)
Publication Number | Publication Date |
---|---|
US6022268A true US6022268A (en) | 2000-02-08 |
Family
ID=21994565
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/054,948 Expired - Lifetime US6022268A (en) | 1997-04-04 | 1998-04-03 | Polishing pads and methods relating thereto |
US09/465,566 Expired - Lifetime US6217434B1 (en) | 1997-04-04 | 1999-12-17 | Polishing pads and methods relating thereto |
US09/717,470 Expired - Lifetime US6293852B1 (en) | 1997-04-04 | 2000-11-21 | Polishing pads and methods relating thereto |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/465,566 Expired - Lifetime US6217434B1 (en) | 1997-04-04 | 1999-12-17 | Polishing pads and methods relating thereto |
US09/717,470 Expired - Lifetime US6293852B1 (en) | 1997-04-04 | 2000-11-21 | Polishing pads and methods relating thereto |
Country Status (1)
Country | Link |
---|---|
US (3) | US6022268A (en) |
Cited By (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6234875B1 (en) | 1999-06-09 | 2001-05-22 | 3M Innovative Properties Company | Method of modifying a surface |
US6287185B1 (en) | 1997-04-04 | 2001-09-11 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
US6293852B1 (en) * | 1997-04-04 | 2001-09-25 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
US6296717B1 (en) * | 1999-06-11 | 2001-10-02 | International Business Machines Corporation | Regeneration of chemical mechanical polishing pads in-situ |
US20010039173A1 (en) * | 1999-08-03 | 2001-11-08 | Brown Nathan R. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US6328634B1 (en) * | 1999-05-11 | 2001-12-11 | Rodel Holdings Inc. | Method of polishing |
EP1175965A2 (en) * | 2000-07-25 | 2002-01-30 | Ebara Corporation | Polishing tool, manufacturing method therefor, polishing apparatus for polishing a semiconductor wafer and method of polishing a substrate |
US6354915B1 (en) * | 1999-01-21 | 2002-03-12 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
WO2002024415A1 (en) * | 2000-09-19 | 2002-03-28 | Rodel Holdings, Inc. | Polishing pad having an advantageous micro-texture |
WO2002030617A1 (en) * | 2000-10-06 | 2002-04-18 | Cabot Microelectronics Corporation | Polishing pad comprising a filled translucent region |
US6390890B1 (en) | 1999-02-06 | 2002-05-21 | Charles J Molnar | Finishing semiconductor wafers with a fixed abrasive finishing element |
US6435947B2 (en) * | 1998-05-26 | 2002-08-20 | Cabot Microelectronics Corporation | CMP polishing pad including a solid catalyst |
US20020127862A1 (en) * | 2001-03-08 | 2002-09-12 | Cooper Richard D. | Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same |
US6454634B1 (en) | 2000-05-27 | 2002-09-24 | Rodel Holdings Inc. | Polishing pads for chemical mechanical planarization |
US6477926B1 (en) | 2000-09-15 | 2002-11-12 | Ppg Industries Ohio, Inc. | Polishing pad |
US6514130B2 (en) * | 1997-12-30 | 2003-02-04 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6533645B2 (en) | 2000-01-18 | 2003-03-18 | Applied Materials, Inc. | Substrate polishing article |
US6561891B2 (en) | 2000-05-23 | 2003-05-13 | Rodel Holdings, Inc. | Eliminating air pockets under a polished pad |
US6561889B1 (en) | 2000-12-27 | 2003-05-13 | Lam Research Corporation | Methods for making reinforced wafer polishing pads and apparatuses implementing the same |
US20030100250A1 (en) * | 2001-10-29 | 2003-05-29 | West Thomas E. | Pads for CMP and polishing substrates |
US6572463B1 (en) * | 2000-12-27 | 2003-06-03 | Lam Research Corp. | Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same |
US6602436B2 (en) | 2000-08-11 | 2003-08-05 | Rodel Holdings, Inc | Chemical mechanical planarization of metal substrates |
US6607428B2 (en) | 2000-01-18 | 2003-08-19 | Applied Materials, Inc. | Material for use in carrier and polishing pads |
US6623337B2 (en) | 2000-06-30 | 2003-09-23 | Rodel Holdings, Inc. | Base-pad for a polishing pad |
US6623341B2 (en) | 2000-01-18 | 2003-09-23 | Applied Materials, Inc. | Substrate polishing apparatus |
US6626740B2 (en) * | 1999-12-23 | 2003-09-30 | Rodel Holdings, Inc. | Self-leveling pads and methods relating thereto |
US20030194959A1 (en) * | 2002-04-15 | 2003-10-16 | Cabot Microelectronics Corporation | Sintered polishing pad with regions of contrasting density |
US6635574B2 (en) * | 1998-06-10 | 2003-10-21 | Micron Technology, Inc. | Method of removing material from a semiconductor substrate |
US6638143B2 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Ion exchange materials for chemical mechanical polishing |
US6641463B1 (en) | 1999-02-06 | 2003-11-04 | Beaver Creek Concepts Inc | Finishing components and elements |
US20030220061A1 (en) * | 2002-05-23 | 2003-11-27 | Cabot Microelectronics Corporation | Microporous polishing pads |
EP1369204A1 (en) * | 2002-06-03 | 2003-12-10 | JSR Corporation | Polishing pad and multi-layer polishing pad |
US20040021243A1 (en) * | 2002-08-02 | 2004-02-05 | Wen-Chang Shih | Method for manufacturing auxiliary gas-adding polyurethae/polyurethane-urea polishing pad |
US6699920B1 (en) | 2002-02-13 | 2004-03-02 | Nicholas Andros | Methods of manufacturing polishing substrates |
US20040048564A1 (en) * | 1997-04-04 | 2004-03-11 | Roberts John V.H. | Polishing pads and methods relating thereto |
US6736709B1 (en) | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
US20040096529A1 (en) * | 2002-11-19 | 2004-05-20 | Wen-Chang Shih | Method of manufacturing polishing pad |
US6749485B1 (en) | 2000-05-27 | 2004-06-15 | Rodel Holdings, Inc. | Hydrolytically stable grooved polishing pads for chemical mechanical planarization |
US20040142637A1 (en) * | 2003-01-22 | 2004-07-22 | Angela Petroski | Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same |
US20040142638A1 (en) * | 2003-01-22 | 2004-07-22 | Angela Petroski | Polishing pad for use in chemical - mechanical planarization of semiconductor wafers and method of making same |
US20040159558A1 (en) * | 2003-02-18 | 2004-08-19 | Bunyan Michael H. | Polishing article for electro-chemical mechanical polishing |
US6780095B1 (en) | 1997-12-30 | 2004-08-24 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US20040171339A1 (en) * | 2002-10-28 | 2004-09-02 | Cabot Microelectronics Corporation | Microporous polishing pads |
US20040209066A1 (en) * | 2003-04-17 | 2004-10-21 | Swisher Robert G. | Polishing pad with window for planarization |
US6840843B2 (en) | 2001-03-01 | 2005-01-11 | Cabot Microelectronics Corporation | Method for manufacturing a polishing pad having a compressed translucent region |
US20050020082A1 (en) * | 2000-05-27 | 2005-01-27 | Arun Vishwanathan | Polishing pads for chemical mechanical planarization |
US20050171225A1 (en) * | 2004-02-03 | 2005-08-04 | Kulp Mary J. | Polyurethane polishing pad |
US20050215179A1 (en) * | 2004-03-23 | 2005-09-29 | Cabot Microelectronics Corporation | Low surface energy CMP pad |
US20050276967A1 (en) * | 2002-05-23 | 2005-12-15 | Cabot Microelectronics Corporation | Surface textured microporous polishing pads |
US20050277371A1 (en) * | 2002-10-28 | 2005-12-15 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US20060046064A1 (en) * | 2004-08-25 | 2006-03-02 | Dwaine Halberg | Method of improving removal rate of pads |
US20060046622A1 (en) * | 2004-09-01 | 2006-03-02 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
US20060052040A1 (en) * | 2002-10-28 | 2006-03-09 | Cabot Microelectronics Corporation | Method for manufacturing microporous CMP materials having controlled pore size |
US20060067160A1 (en) * | 2004-09-30 | 2006-03-30 | Koetas Joseph P | Apparatus for forming a polishing pad having a reduced striations |
US20060066001A1 (en) * | 2004-09-30 | 2006-03-30 | Koetas Joseph P | Method of forming a polishing pad having reduced striations |
US20060089093A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
US20060099891A1 (en) * | 2004-11-09 | 2006-05-11 | Peter Renteln | Method of chemical mechanical polishing, and a pad provided therefore |
US20060110488A1 (en) * | 2004-11-23 | 2006-05-25 | Saikin Alan H | Apparatus for forming a striation reduced chemical mechanical polishing pad |
US20060108701A1 (en) * | 2004-11-23 | 2006-05-25 | Saikin Allan H | Method for forming a striation reduced chemical mechanical polishing pad |
US20060199473A1 (en) * | 2003-04-03 | 2006-09-07 | Masao Suzuki | Polishing pad, process for producing the same and method of polishing therewith |
US20060254706A1 (en) * | 2004-10-27 | 2006-11-16 | Swisher Robert G | Polyurethane urea polishing pad |
US20070021045A1 (en) * | 2004-10-27 | 2007-01-25 | Ppg Industries Ohio, Inc. | Polyurethane Urea Polishing Pad with Window |
US7169030B1 (en) | 2006-05-25 | 2007-01-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
US20070049169A1 (en) * | 2005-08-02 | 2007-03-01 | Vaidya Neha P | Nonwoven polishing pads for chemical mechanical polishing |
US20070093191A1 (en) * | 2005-10-20 | 2007-04-26 | Iv Technologies Co., Ltd. | Polishing pad and method of fabrication |
US7241206B1 (en) | 2006-02-17 | 2007-07-10 | Chien-Min Sung | Tools for polishing and associated methods |
US20070243694A1 (en) * | 2006-04-14 | 2007-10-18 | Etsurou Morita | Bonded wafer and method of producing the same |
US20070275226A1 (en) * | 2006-05-25 | 2007-11-29 | Mary Jo Kulp | Chemical mechanical polishing pad |
US20070289223A1 (en) * | 2006-02-17 | 2007-12-20 | Chien-Min Sung | Tools for polishing and associated methods |
US7371160B1 (en) | 2006-12-21 | 2008-05-13 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Elastomer-modified chemical mechanical polishing pad |
US20080153395A1 (en) * | 2006-12-21 | 2008-06-26 | Mary Jo Kulp | Chemical mechanical polishing pad |
US7435165B2 (en) | 2002-10-28 | 2008-10-14 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US20090032075A1 (en) * | 2004-05-11 | 2009-02-05 | Applied Materials, Inc. | Methods and apparatus for liquid chemical delivery |
JP2009033193A (en) * | 2000-05-27 | 2009-02-12 | Rohm & Haas Electronic Materials Cmp Holdings Inc | Polishing pads for chemical mechanical planarization |
US20090053976A1 (en) * | 2005-02-18 | 2009-02-26 | Roy Pradip K | Customized Polishing Pads for CMP and Methods of Fabrication and Use Thereof |
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
WO2010138724A1 (en) | 2009-05-27 | 2010-12-02 | Rogers Corporation | Polishing pad, polyurethane layer therefor, and method of polishing a silicon wafer |
JP2011151373A (en) * | 2009-12-24 | 2011-08-04 | Jsr Corp | Chemical mechanical polishing pad and chemical mechanical polishing method using the same |
US8380339B2 (en) | 2003-03-25 | 2013-02-19 | Nexplanar Corporation | Customized polish pads for chemical mechanical planarization |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8939818B2 (en) | 2010-02-25 | 2015-01-27 | Toyo Tire & Rubber Co. Ltd. | Polishing pad |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
JP2016068250A (en) * | 2014-09-29 | 2016-05-09 | 富士紡ホールディングス株式会社 | Polishing pad |
US10562149B2 (en) | 2015-09-25 | 2020-02-18 | Cabot Microelectronics Corporation | Polyurethane CMP pads having a high modulus ratio |
US10786885B2 (en) | 2017-01-20 | 2020-09-29 | Applied Materials, Inc. | Thin plastic polishing article for CMP applications |
US11717936B2 (en) | 2018-09-14 | 2023-08-08 | Applied Materials, Inc. | Methods for a web-based CMP system |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6585574B1 (en) * | 1998-06-02 | 2003-07-01 | Brian Lombardo | Polishing pad with reduced moisture absorption |
WO2000012262A1 (en) * | 1998-08-28 | 2000-03-09 | Toray Industries, Inc. | Polishing pad |
WO2000027589A1 (en) * | 1998-11-09 | 2000-05-18 | Toray Industries, Inc. | Polishing pad and polishing device |
JP2001259978A (en) * | 2000-03-07 | 2001-09-25 | Three M Innovative Properties Co | Chamfering method for end part of glass plate |
US6964604B2 (en) * | 2000-06-23 | 2005-11-15 | International Business Machines Corporation | Fiber embedded polishing pad |
US6712681B1 (en) * | 2000-06-23 | 2004-03-30 | International Business Machines Corporation | Polishing pads with polymer filled fibrous web, and methods for fabricating and using same |
JP2003062748A (en) * | 2001-08-24 | 2003-03-05 | Inoac Corp | Abrasive pad |
AU2003225999A1 (en) * | 2002-03-25 | 2003-10-13 | Thomas West, Inc | Smooth pads for cmp and polishing substrates |
US7025668B2 (en) * | 2002-06-18 | 2006-04-11 | Raytech Innovative Solutions, Llc | Gradient polishing pad made from paper-making fibers for use in chemical/mechanical planarization of wafers |
US7166247B2 (en) | 2002-06-24 | 2007-01-23 | Micron Technology, Inc. | Foamed mechanical planarization pads made with supercritical fluid |
US6761625B1 (en) * | 2003-05-20 | 2004-07-13 | Intel Corporation | Reclaiming virgin test wafers |
JP4475404B2 (en) * | 2004-10-14 | 2010-06-09 | Jsr株式会社 | Polishing pad |
US20070010175A1 (en) | 2005-07-07 | 2007-01-11 | San Fang Chemical Industry Co., Ltd. | Polishing pad and method of producing same |
US7316605B1 (en) * | 2006-07-03 | 2008-01-08 | San Fang Chemical Industry Co., Ltd. | Sheet for mounting polishing workpiece and method for making the same |
US7789738B2 (en) * | 2006-07-03 | 2010-09-07 | San Fang Chemical Industry Co., Ltd. | Sheet for mounting polishing workpiece and method for making the same |
US20080064310A1 (en) * | 2006-09-08 | 2008-03-13 | Chung-Chih Feng | Polishing pad having hollow fibers and the method for making the same |
US20090252876A1 (en) * | 2007-05-07 | 2009-10-08 | San Fang Chemical Industry Co., Ltd. | Sheet for mounting polishing workpiece and method for making the same |
US20090094900A1 (en) * | 2007-10-15 | 2009-04-16 | Ppg Industries Ohio, Inc. | Method of forming a polyurea polyurethane elastomer containing chemical mechanical polishing pad |
WO2009134775A1 (en) * | 2008-04-29 | 2009-11-05 | Semiquest, Inc. | Polishing pad composition and method of manufacture and use |
US12006442B2 (en) | 2019-09-11 | 2024-06-11 | Applied Materials, Inc. | Additive manufacturing of polishing pads |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3889430A (en) * | 1972-05-17 | 1975-06-17 | S P A M | Abrasive tools |
US4927432A (en) * | 1986-03-25 | 1990-05-22 | Rodel, Inc. | Pad material for grinding, lapping and polishing |
US5007207A (en) * | 1987-12-22 | 1991-04-16 | Cornelius Phaal | Abrasive product |
US5081051A (en) * | 1990-09-12 | 1992-01-14 | Intel Corporation | Method for conditioning the surface of a polishing pad |
US5177908A (en) * | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
US5247765A (en) * | 1991-07-23 | 1993-09-28 | Abrasive Technology Europe, S.A. | Abrasive product comprising a plurality of discrete composite abrasive pellets in a resilient resin matrix |
US5394655A (en) * | 1993-08-31 | 1995-03-07 | Texas Instruments Incorporated | Semiconductor polishing pad |
US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5569062A (en) * | 1995-07-03 | 1996-10-29 | Speedfam Corporation | Polishing pad conditioning |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6069080A (en) * | 1992-08-19 | 2000-05-30 | Rodel Holdings, Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
US6022268A (en) * | 1998-04-03 | 2000-02-08 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
-
1998
- 1998-04-03 US US09/054,948 patent/US6022268A/en not_active Expired - Lifetime
-
1999
- 1999-12-17 US US09/465,566 patent/US6217434B1/en not_active Expired - Lifetime
-
2000
- 2000-11-21 US US09/717,470 patent/US6293852B1/en not_active Expired - Lifetime
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3889430A (en) * | 1972-05-17 | 1975-06-17 | S P A M | Abrasive tools |
US4927432A (en) * | 1986-03-25 | 1990-05-22 | Rodel, Inc. | Pad material for grinding, lapping and polishing |
US5007207A (en) * | 1987-12-22 | 1991-04-16 | Cornelius Phaal | Abrasive product |
US5177908A (en) * | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
US5081051A (en) * | 1990-09-12 | 1992-01-14 | Intel Corporation | Method for conditioning the surface of a polishing pad |
US5247765A (en) * | 1991-07-23 | 1993-09-28 | Abrasive Technology Europe, S.A. | Abrasive product comprising a plurality of discrete composite abrasive pellets in a resilient resin matrix |
US5394655A (en) * | 1993-08-31 | 1995-03-07 | Texas Instruments Incorporated | Semiconductor polishing pad |
US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5569062A (en) * | 1995-07-03 | 1996-10-29 | Speedfam Corporation | Polishing pad conditioning |
Cited By (157)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6739962B2 (en) * | 1997-04-04 | 2004-05-25 | Rodel Holdings, Inc. | Polishing pads and methods relating thereto |
US6287185B1 (en) | 1997-04-04 | 2001-09-11 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
US6293852B1 (en) * | 1997-04-04 | 2001-09-25 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
US20020155801A1 (en) * | 1997-04-04 | 2002-10-24 | Roberts John V.H. | Polishing pads and methods relating thereto |
US6425816B1 (en) | 1997-04-04 | 2002-07-30 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
US20040048564A1 (en) * | 1997-04-04 | 2004-03-11 | Roberts John V.H. | Polishing pads and methods relating thereto |
US6843712B2 (en) * | 1997-04-04 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pads and methods relating thereto |
US6913519B2 (en) | 1997-12-30 | 2005-07-05 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US20040097175A1 (en) * | 1997-12-30 | 2004-05-20 | Moore Scott E. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6537190B2 (en) | 1997-12-30 | 2003-03-25 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6780095B1 (en) | 1997-12-30 | 2004-08-24 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6652370B2 (en) | 1997-12-30 | 2003-11-25 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6514130B2 (en) * | 1997-12-30 | 2003-02-04 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6435947B2 (en) * | 1998-05-26 | 2002-08-20 | Cabot Microelectronics Corporation | CMP polishing pad including a solid catalyst |
US6803316B2 (en) | 1998-06-10 | 2004-10-12 | Micron Technology, Inc. | Method of planarizing by removing all or part of an oxidizable material layer from a semiconductor substrate |
US6635574B2 (en) * | 1998-06-10 | 2003-10-21 | Micron Technology, Inc. | Method of removing material from a semiconductor substrate |
US6500053B2 (en) * | 1999-01-21 | 2002-12-31 | Rodel Holdings, Inc. | Polishing pads and methods relating thereto |
US6354915B1 (en) * | 1999-01-21 | 2002-03-12 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
US6390890B1 (en) | 1999-02-06 | 2002-05-21 | Charles J Molnar | Finishing semiconductor wafers with a fixed abrasive finishing element |
US6641463B1 (en) | 1999-02-06 | 2003-11-04 | Beaver Creek Concepts Inc | Finishing components and elements |
US6328634B1 (en) * | 1999-05-11 | 2001-12-11 | Rodel Holdings Inc. | Method of polishing |
US6234875B1 (en) | 1999-06-09 | 2001-05-22 | 3M Innovative Properties Company | Method of modifying a surface |
US6296717B1 (en) * | 1999-06-11 | 2001-10-02 | International Business Machines Corporation | Regeneration of chemical mechanical polishing pads in-situ |
US6872131B2 (en) | 1999-08-03 | 2005-03-29 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US6722963B1 (en) | 1999-08-03 | 2004-04-20 | Micron Technology, Inc. | Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US20010039173A1 (en) * | 1999-08-03 | 2001-11-08 | Brown Nathan R. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US20020006773A1 (en) * | 1999-08-03 | 2002-01-17 | Brown Nathan R. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US6852017B2 (en) | 1999-08-03 | 2005-02-08 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US20040116050A1 (en) * | 1999-08-03 | 2004-06-17 | Brown Nathan R. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US7066791B2 (en) * | 1999-08-03 | 2006-06-27 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US6881134B2 (en) * | 1999-08-03 | 2005-04-19 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US6869345B2 (en) | 1999-08-03 | 2005-03-22 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
US6638143B2 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Ion exchange materials for chemical mechanical polishing |
US6626740B2 (en) * | 1999-12-23 | 2003-09-30 | Rodel Holdings, Inc. | Self-leveling pads and methods relating thereto |
US6623341B2 (en) | 2000-01-18 | 2003-09-23 | Applied Materials, Inc. | Substrate polishing apparatus |
US6688957B2 (en) | 2000-01-18 | 2004-02-10 | Applied Materials Inc. | Substrate polishing article |
US6607428B2 (en) | 2000-01-18 | 2003-08-19 | Applied Materials, Inc. | Material for use in carrier and polishing pads |
US6533645B2 (en) | 2000-01-18 | 2003-03-18 | Applied Materials, Inc. | Substrate polishing article |
US6561891B2 (en) | 2000-05-23 | 2003-05-13 | Rodel Holdings, Inc. | Eliminating air pockets under a polished pad |
US6454634B1 (en) | 2000-05-27 | 2002-09-24 | Rodel Holdings Inc. | Polishing pads for chemical mechanical planarization |
US6749485B1 (en) | 2000-05-27 | 2004-06-15 | Rodel Holdings, Inc. | Hydrolytically stable grooved polishing pads for chemical mechanical planarization |
JP2012114454A (en) * | 2000-05-27 | 2012-06-14 | Rohm & Haas Electronic Materials Cmp Holdings Inc | Abrasive pad for chemical mechanical planarization |
JP2013239737A (en) * | 2000-05-27 | 2013-11-28 | Rohm & Haas Electronic Materials Cmp Holdings Inc | Grooved polishing pad for chemical and mechanical planarization |
US20050020082A1 (en) * | 2000-05-27 | 2005-01-27 | Arun Vishwanathan | Polishing pads for chemical mechanical planarization |
US6582283B2 (en) | 2000-05-27 | 2003-06-24 | Rodel Holdings, Inc. | Polishing pads for chemical mechanical planarization |
JP2015188108A (en) * | 2000-05-27 | 2015-10-29 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | polishing pads for chemical mechanical planarization |
JP2009033193A (en) * | 2000-05-27 | 2009-02-12 | Rohm & Haas Electronic Materials Cmp Holdings Inc | Polishing pads for chemical mechanical planarization |
US6860802B1 (en) | 2000-05-27 | 2005-03-01 | Rohm And Haas Electric Materials Cmp Holdings, Inc. | Polishing pads for chemical mechanical planarization |
US6736709B1 (en) | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
US6623337B2 (en) | 2000-06-30 | 2003-09-23 | Rodel Holdings, Inc. | Base-pad for a polishing pad |
EP1175965A2 (en) * | 2000-07-25 | 2002-01-30 | Ebara Corporation | Polishing tool, manufacturing method therefor, polishing apparatus for polishing a semiconductor wafer and method of polishing a substrate |
EP1175965A3 (en) * | 2000-07-25 | 2003-12-17 | Ebara Corporation | Polishing tool, manufacturing method therefor, polishing apparatus for polishing a semiconductor wafer and method of polishing a substrate |
US6602436B2 (en) | 2000-08-11 | 2003-08-05 | Rodel Holdings, Inc | Chemical mechanical planarization of metal substrates |
US6477926B1 (en) | 2000-09-15 | 2002-11-12 | Ppg Industries Ohio, Inc. | Polishing pad |
WO2002024415A1 (en) * | 2000-09-19 | 2002-03-28 | Rodel Holdings, Inc. | Polishing pad having an advantageous micro-texture |
US6641471B1 (en) * | 2000-09-19 | 2003-11-04 | Rodel Holdings, Inc | Polishing pad having an advantageous micro-texture and methods relating thereto |
WO2002030617A1 (en) * | 2000-10-06 | 2002-04-18 | Cabot Microelectronics Corporation | Polishing pad comprising a filled translucent region |
US6537134B2 (en) | 2000-10-06 | 2003-03-25 | Cabot Microelectronics Corporation | Polishing pad comprising a filled translucent region |
US6572463B1 (en) * | 2000-12-27 | 2003-06-03 | Lam Research Corp. | Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same |
US6561889B1 (en) | 2000-12-27 | 2003-05-13 | Lam Research Corporation | Methods for making reinforced wafer polishing pads and apparatuses implementing the same |
US6840843B2 (en) | 2001-03-01 | 2005-01-11 | Cabot Microelectronics Corporation | Method for manufacturing a polishing pad having a compressed translucent region |
US6863774B2 (en) | 2001-03-08 | 2005-03-08 | Raytech Innovative Solutions, Inc. | Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same |
US20020127862A1 (en) * | 2001-03-08 | 2002-09-12 | Cooper Richard D. | Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same |
US20030100250A1 (en) * | 2001-10-29 | 2003-05-29 | West Thomas E. | Pads for CMP and polishing substrates |
US6699920B1 (en) | 2002-02-13 | 2004-03-02 | Nicholas Andros | Methods of manufacturing polishing substrates |
US20030194959A1 (en) * | 2002-04-15 | 2003-10-16 | Cabot Microelectronics Corporation | Sintered polishing pad with regions of contrasting density |
US6899598B2 (en) | 2002-05-23 | 2005-05-31 | Cabot Microelectronics Corporation | Microporous polishing pads |
US20050276967A1 (en) * | 2002-05-23 | 2005-12-15 | Cabot Microelectronics Corporation | Surface textured microporous polishing pads |
US6935931B2 (en) | 2002-05-23 | 2005-08-30 | Cabot Microelectronics Corporation | Microporous polishing pads |
US20040171340A1 (en) * | 2002-05-23 | 2004-09-02 | Cabot Microelectronics Corporation | Microporous polishing pads |
US20040177563A1 (en) * | 2002-05-23 | 2004-09-16 | Cabot Microelectronics Corporation | Microporous polishing pads |
US6896593B2 (en) | 2002-05-23 | 2005-05-24 | Cabot Microelectronic Corporation | Microporous polishing pads |
US20040171338A1 (en) * | 2002-05-23 | 2004-09-02 | Cabot Microelectronics Corporation | Microporous polishing pads |
US6913517B2 (en) | 2002-05-23 | 2005-07-05 | Cabot Microelectronics Corporation | Microporous polishing pads |
US20030220061A1 (en) * | 2002-05-23 | 2003-11-27 | Cabot Microelectronics Corporation | Microporous polishing pads |
CN100492597C (en) * | 2002-06-03 | 2009-05-27 | Jsr株式会社 | Polishing mattress and its manufacture and usage method |
US20040014413A1 (en) * | 2002-06-03 | 2004-01-22 | Jsr Corporation | Polishing pad and multi-layer polishing pad |
EP1369204A1 (en) * | 2002-06-03 | 2003-12-10 | JSR Corporation | Polishing pad and multi-layer polishing pad |
US20040021243A1 (en) * | 2002-08-02 | 2004-02-05 | Wen-Chang Shih | Method for manufacturing auxiliary gas-adding polyurethae/polyurethane-urea polishing pad |
US20060052040A1 (en) * | 2002-10-28 | 2006-03-09 | Cabot Microelectronics Corporation | Method for manufacturing microporous CMP materials having controlled pore size |
US7311862B2 (en) | 2002-10-28 | 2007-12-25 | Cabot Microelectronics Corporation | Method for manufacturing microporous CMP materials having controlled pore size |
US7435165B2 (en) | 2002-10-28 | 2008-10-14 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US20040171339A1 (en) * | 2002-10-28 | 2004-09-02 | Cabot Microelectronics Corporation | Microporous polishing pads |
US20050277371A1 (en) * | 2002-10-28 | 2005-12-15 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US7267607B2 (en) | 2002-10-28 | 2007-09-11 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US7132070B2 (en) | 2002-11-19 | 2006-11-07 | Iv Technologies, Co., Ltd. | Method of manufacturing polishing pad |
US7285233B2 (en) | 2002-11-19 | 2007-10-23 | Iv Technologies Co., Ltd. | Method of manufacturing polishing pad |
US20040096529A1 (en) * | 2002-11-19 | 2004-05-20 | Wen-Chang Shih | Method of manufacturing polishing pad |
US20060113705A1 (en) * | 2002-11-19 | 2006-06-01 | Wen-Chang Shih | Method of manufacturing polishing pad |
US20040142637A1 (en) * | 2003-01-22 | 2004-07-22 | Angela Petroski | Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same |
US20040142638A1 (en) * | 2003-01-22 | 2004-07-22 | Angela Petroski | Polishing pad for use in chemical - mechanical planarization of semiconductor wafers and method of making same |
US7037184B2 (en) | 2003-01-22 | 2006-05-02 | Raytech Innovation Solutions, Llc | Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same |
US6852020B2 (en) | 2003-01-22 | 2005-02-08 | Raytech Innovative Solutions, Inc. | Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same |
US20040159558A1 (en) * | 2003-02-18 | 2004-08-19 | Bunyan Michael H. | Polishing article for electro-chemical mechanical polishing |
US7141155B2 (en) | 2003-02-18 | 2006-11-28 | Parker-Hannifin Corporation | Polishing article for electro-chemical mechanical polishing |
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8380339B2 (en) | 2003-03-25 | 2013-02-19 | Nexplanar Corporation | Customized polish pads for chemical mechanical planarization |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US20060199473A1 (en) * | 2003-04-03 | 2006-09-07 | Masao Suzuki | Polishing pad, process for producing the same and method of polishing therewith |
US20040209066A1 (en) * | 2003-04-17 | 2004-10-21 | Swisher Robert G. | Polishing pad with window for planarization |
US20050171225A1 (en) * | 2004-02-03 | 2005-08-04 | Kulp Mary J. | Polyurethane polishing pad |
US20080242755A1 (en) * | 2004-02-03 | 2008-10-02 | Mary Jo Kulp | Polyurethane polishing pad |
US7414080B2 (en) * | 2004-02-03 | 2008-08-19 | Materials Cmp Holdings, Inc. | Polyurethane polishing pad |
US20050171224A1 (en) * | 2004-02-03 | 2005-08-04 | Kulp Mary J. | Polyurethane polishing pad |
US20110054057A9 (en) * | 2004-02-03 | 2011-03-03 | Mary Jo Kulp | Polyurethane polishing pad |
US8288448B2 (en) * | 2004-02-03 | 2012-10-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polyurethane polishing pad |
US20050215179A1 (en) * | 2004-03-23 | 2005-09-29 | Cabot Microelectronics Corporation | Low surface energy CMP pad |
US7059936B2 (en) | 2004-03-23 | 2006-06-13 | Cabot Microelectronics Corporation | Low surface energy CMP pad |
US20090032075A1 (en) * | 2004-05-11 | 2009-02-05 | Applied Materials, Inc. | Methods and apparatus for liquid chemical delivery |
US20060046064A1 (en) * | 2004-08-25 | 2006-03-02 | Dwaine Halberg | Method of improving removal rate of pads |
US20060046622A1 (en) * | 2004-09-01 | 2006-03-02 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
US8075372B2 (en) | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
US7396497B2 (en) | 2004-09-30 | 2008-07-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of forming a polishing pad having reduced striations |
US20060067160A1 (en) * | 2004-09-30 | 2006-03-30 | Koetas Joseph P | Apparatus for forming a polishing pad having a reduced striations |
US20060066001A1 (en) * | 2004-09-30 | 2006-03-30 | Koetas Joseph P | Method of forming a polishing pad having reduced striations |
US7275856B2 (en) | 2004-09-30 | 2007-10-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Apparatus for forming a polishing pad having a reduced striations |
US20060254706A1 (en) * | 2004-10-27 | 2006-11-16 | Swisher Robert G | Polyurethane urea polishing pad |
US7291063B2 (en) | 2004-10-27 | 2007-11-06 | Ppg Industries Ohio, Inc. | Polyurethane urea polishing pad |
US20060089093A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
US20070021045A1 (en) * | 2004-10-27 | 2007-01-25 | Ppg Industries Ohio, Inc. | Polyurethane Urea Polishing Pad with Window |
US20060099891A1 (en) * | 2004-11-09 | 2006-05-11 | Peter Renteln | Method of chemical mechanical polishing, and a pad provided therefore |
US20060110488A1 (en) * | 2004-11-23 | 2006-05-25 | Saikin Alan H | Apparatus for forming a striation reduced chemical mechanical polishing pad |
US7275928B2 (en) | 2004-11-23 | 2007-10-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Apparatus for forming a striation reduced chemical mechanical polishing pad |
US20060108701A1 (en) * | 2004-11-23 | 2006-05-25 | Saikin Allan H | Method for forming a striation reduced chemical mechanical polishing pad |
US8715035B2 (en) | 2005-02-18 | 2014-05-06 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US20090053976A1 (en) * | 2005-02-18 | 2009-02-26 | Roy Pradip K | Customized Polishing Pads for CMP and Methods of Fabrication and Use Thereof |
US20070049169A1 (en) * | 2005-08-02 | 2007-03-01 | Vaidya Neha P | Nonwoven polishing pads for chemical mechanical polishing |
US20070093191A1 (en) * | 2005-10-20 | 2007-04-26 | Iv Technologies Co., Ltd. | Polishing pad and method of fabrication |
US8303382B2 (en) | 2005-10-20 | 2012-11-06 | Iv Technologies Co., Ltd. | Polishing pad and method of fabrication |
US20070289223A1 (en) * | 2006-02-17 | 2007-12-20 | Chien-Min Sung | Tools for polishing and associated methods |
US20070215486A1 (en) * | 2006-02-17 | 2007-09-20 | Chien-Ming Sung | Tools for polishing and associated methods |
US7241206B1 (en) | 2006-02-17 | 2007-07-10 | Chien-Min Sung | Tools for polishing and associated methods |
US7494404B2 (en) | 2006-02-17 | 2009-02-24 | Chien-Min Sung | Tools for polishing and associated methods |
US20070197142A1 (en) * | 2006-02-17 | 2007-08-23 | Chien-Min Sung | Tools for polishing and associated methods |
US20080209816A1 (en) * | 2006-02-17 | 2008-09-04 | Chien-Min Sung | Tools for polishing and associated methods |
US7544117B2 (en) * | 2006-02-17 | 2009-06-09 | Chien-Min Sung | Tools for polishing and associated methods |
US7393264B1 (en) | 2006-02-17 | 2008-07-01 | Chien-Min Sung | Tools for polishing and associated methods |
US7285039B1 (en) | 2006-02-17 | 2007-10-23 | Chien-Min Sung | Tools for polishing and associated methods |
US20080014846A1 (en) * | 2006-02-17 | 2008-01-17 | Chien-Min Sung | Tools for polishing and associated methods |
US7718507B2 (en) * | 2006-04-14 | 2010-05-18 | Sumco Corporation | Bonded wafer and method of producing the same |
US20070243694A1 (en) * | 2006-04-14 | 2007-10-18 | Etsurou Morita | Bonded wafer and method of producing the same |
US7445847B2 (en) | 2006-05-25 | 2008-11-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
US7169030B1 (en) | 2006-05-25 | 2007-01-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
US20070275226A1 (en) * | 2006-05-25 | 2007-11-29 | Mary Jo Kulp | Chemical mechanical polishing pad |
WO2008045149A3 (en) * | 2006-10-04 | 2008-11-27 | Chien-Min Sung | Tools for polishing and associated methods |
WO2008045149A2 (en) * | 2006-10-04 | 2008-04-17 | Chien-Min Sung | Tools for polishing and associated methods |
US7371160B1 (en) | 2006-12-21 | 2008-05-13 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Elastomer-modified chemical mechanical polishing pad |
US7438636B2 (en) | 2006-12-21 | 2008-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
US20080153395A1 (en) * | 2006-12-21 | 2008-06-26 | Mary Jo Kulp | Chemical mechanical polishing pad |
WO2010138724A1 (en) | 2009-05-27 | 2010-12-02 | Rogers Corporation | Polishing pad, polyurethane layer therefor, and method of polishing a silicon wafer |
JP2011151373A (en) * | 2009-12-24 | 2011-08-04 | Jsr Corp | Chemical mechanical polishing pad and chemical mechanical polishing method using the same |
US8939818B2 (en) | 2010-02-25 | 2015-01-27 | Toyo Tire & Rubber Co. Ltd. | Polishing pad |
JP2016068250A (en) * | 2014-09-29 | 2016-05-09 | 富士紡ホールディングス株式会社 | Polishing pad |
US10562149B2 (en) | 2015-09-25 | 2020-02-18 | Cabot Microelectronics Corporation | Polyurethane CMP pads having a high modulus ratio |
US10786885B2 (en) | 2017-01-20 | 2020-09-29 | Applied Materials, Inc. | Thin plastic polishing article for CMP applications |
US11717936B2 (en) | 2018-09-14 | 2023-08-08 | Applied Materials, Inc. | Methods for a web-based CMP system |
Also Published As
Publication number | Publication date |
---|---|
US6217434B1 (en) | 2001-04-17 |
US6293852B1 (en) | 2001-09-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6022268A (en) | Polishing pads and methods relating thereto | |
US6682402B1 (en) | Polishing pads and methods relating thereto | |
EP1015176B1 (en) | Improved polishing pads and methods relating thereto | |
US6328634B1 (en) | Method of polishing | |
US6739962B2 (en) | Polishing pads and methods relating thereto | |
KR100499601B1 (en) | Improved Polishing Pads And Methods Relating Thereto | |
KR100571448B1 (en) | Polishing pads with advantageous microstructure | |
US6500053B2 (en) | Polishing pads and methods relating thereto | |
US6648733B2 (en) | Polishing pads and methods relating thereto | |
US20020042200A1 (en) | Method for conditioning polishing pads | |
TWI758470B (en) | Methods of making chemical mechanical polishing layers having improved uniformity | |
US9034063B2 (en) | Method of manufacturing grooved chemical mechanical polishing layers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: RODEL HOLDINGS, INC., DELAWARE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ROBERTS, JOHN V. H.;JAMES, DAVID B.;COOK, LEE MELBOURNE;REEL/FRAME:009129/0106 Effective date: 19980403 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, I Free format text: CHANGE OF NAME;ASSIGNOR:RODEL HOLDINGS, INC.;REEL/FRAME:014725/0685 Effective date: 20040127 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |