US20160006995A1 - Image sensor including color separation element and image pickup apparatus including the image sensor - Google Patents
Image sensor including color separation element and image pickup apparatus including the image sensor Download PDFInfo
- Publication number
- US20160006995A1 US20160006995A1 US14/791,746 US201514791746A US2016006995A1 US 20160006995 A1 US20160006995 A1 US 20160006995A1 US 201514791746 A US201514791746 A US 201514791746A US 2016006995 A1 US2016006995 A1 US 2016006995A1
- Authority
- US
- United States
- Prior art keywords
- light
- pixel
- color separation
- separation element
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000926 separation method Methods 0.000 title claims description 186
- 239000000203 mixture Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 239000003086 colorant Substances 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 SiN3 Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H04N9/097—
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T3/00—Geometric image transformations in the plane of the image
- G06T3/40—Scaling of whole images or parts thereof, e.g. expanding or contracting
- G06T3/4015—Image demosaicing, e.g. colour filter arrays [CFA] or Bayer patterns
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T5/00—Image enhancement or restoration
- G06T5/20—Image enhancement or restoration using local operators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10024—Color image
Definitions
- the exemplary embodiments relate to an image sensor including a color separation element and an image pickup apparatus including the image sensor, and more particularly, to an image sensor having an improved light use efficiency by using a color separation element, and an image pickup apparatus including the image sensor.
- Color display devices or color image sensors usually display an image of various colors or detect a color of incident light by using a color filter.
- An RGB color filter method in which, for example, a green filter is arranged at two pixels of four pixels and a blue filter and a red filter are arranged in the other two pixels, is most widely employed by a currently used color display device or color image sensor.
- a CYGM color filter method may be employed in which color filters of cyan, yellow, green, and magenta, which are complementary colors, are respectively arranged at four pixels.
- a color filter may have a low light use efficiency because the color filter absorbs light of colors other than a color corresponding to the color filter. For example, when an RGB color filter is in use, only 1 ⁇ 3 of the incident light is transmitted and the other portion, that is, 2 ⁇ 3, of the incident light is absorbed. Accordingly, the light use efficiency may be about 33%. Accordingly, for the color display device or a color image sensor, most of a light loss is generated in the color filter.
- the color separation element may separate the color of an incident light by using the diffraction or refraction characteristics of light that vary according to a wavelength of the light.
- the colors separated by the color separation element may be provided to pixels corresponding to the colors, respectively.
- an image sensor including a pixel array including Bayer patterns, each of the Bayer patterns including a first pixel and a third pixel provided in a first diagonal direction and two second pixels provided in a second diagonal direction crossing the first diagonal direction, and a color separation element provided to face the second pixels in the second diagonal direction, wherein the color separation element is configured to control light of a first wavelength band of incident light to travel in a first lateral direction of the color separation element toward the first pixel, to control light of a third wavelength band of the incident light to travel in a second lateral direction of the color separation element toward the third pixel, and to control light of a second wavelength band of the incident light to travel in a downward direction of the color separation element toward the second pixels.
- the image sensor may further include a color filter layer that is provided on the pixel array, wherein the color filter layer includes at least one of a first color filter provided adjacent to the first pixel, a second color filter provided adjacent to the second pixel, and a third color filter provided adjacent to the third pixel.
- the image sensor may further include a transparent dielectric layer provided on the color filter layer, and a microlens provided on the transparent dielectric layer.
- the microlens may be provided to face the pixel array including the Bayer patterns.
- an image sensor including a pixel array including Bayer patterns, each of the Bayer patterns including a first pixel and a third pixel provided in a first diagonal direction and two second pixels provided in a second diagonal direction crossing the first diagonal direction, color separation elements provided to face the second pixels, respectively, and a color filter layer provided on the pixel array, wherein each of the color separation elements is configured to control light of a second wavelength band of incident light to travel in a downward direction of the color separation element and to control mixed light including a mixture of light of a first wavelength band of the incident light and light of a third wavelength band of the incident light to travel in directions toward left and right sides of the color separation element.
- One of the color separation elements may include a first color separation element provided in a first direction and a second color separation element provided in a second direction perpendicular to the first direction.
- the first color separation element and the second color element may be alternately provided to face the second pixels.
- Both of the first color separation element and the second color element may be provided adjacent to one of the second pixels.
- the color separation elements may be oriented in the second diagonal direction.
- One of the color separation elements may include a first color separation element oriented in the first diagonal direction and a second color separation element oriented in the second diagonal direction.
- the image sensor may further include a transparent dielectric layer provided on the color filter layer, and microlenses provided on the transparent dielectric layer, wherein the microlenses are separately provided at each of the first, second, and third pixels.
- the light of the second wavelength band separated by the color separation elements may be incident on the second pixels and the mixed light of the first and second wavelength bands and a white light may be incident together on the first and third pixels.
- the color filter layer may include a first color filter provided on the first pixel and configured to transmit the light of the first wavelength band and a third color filter provided on the third pixel and configured to transmit the light of the third wavelength band.
- the light of the first wavelength band may be red light
- the light of the second wavelength band may be green light
- the light of the third wavelength band may be blue light
- an image sensor including a pixel array including a first pixel and a third pixel provided in a first diagonal direction and two second pixels provided in a second diagonal direction crossing the first diagonal direction, and a first color separation element oriented in the second diagonal direction and facing the second pixels.
- the image sensor may further include a second color separation element oriented in the first diagonal direction and facing the second pixels.
- the first color separation element may be configured to control light of a first wavelength band of incident light to travel in a first lateral direction of the first color separation element toward the first pixel, to control light of a third wavelength band of the incident light to travel in a second lateral direction of the first color separation element toward the third pixel, and to control light of a second wavelength band of the incident light to travel in a downward direction of the first color separation element toward the second pixels.
- the second color separation element may be configured to control light of a first wavelength band of incident light to travel in a first lateral direction of the second color separation element toward the first pixel, to control light of a third wavelength band of the incident light to travel in a second lateral direction of the second color separation element toward the third pixel, and to control light of a second wavelength band of the incident light to travel in a downward direction of the second color separation element toward the second pixels.
- the image sensor may further include a color filter layer that is provided on the pixel array, wherein the color filter layer may include at least one of a first color filter provided adjacent to the first pixel, a second color filter provided adjacent to one of the second pixels, and a third color filter provided adjacent to the third pixel.
- the image sensor may further include a transparent dielectric layer provided on the color filter layer, wherein the first color separation element may be buried in the transparent dielectric layer.
- FIGS. 1 , 2 , 3 and 4 are cross-sectional views schematically and exemplarily illustrating the color separation characteristics of various color separation elements
- FIG. 5 is a plan view schematically illustrating a pixel structure of an image sensor including the color separation elements of FIGS. 1 and 2 , according to an exemplary embodiment
- FIG. 6A is a cross-sectional view taken along the line A-A′ of the image sensor of FIG. 5 ;
- FIG. 6B is a cross-sectional view taken along the line B-B′ of the image sensor of FIG. 5 ;
- FIG. 7 is a plan view schematically illustrating a pixel structure of an image sensor including the color separation element of FIG. 3 , according to another exemplary embodiment
- FIG. 8 is a plan view schematically illustrating a pixel structure of an image sensor including the color separation element of FIG. 4 , according to another exemplary embodiment
- FIG. 9A is a cross-sectional view taken along the line C-C′ of the image sensor of FIG. 8 ;
- FIG. 9B is a cross-sectional view taken along the line D-D′ of the image sensor of FIG. 8 ;
- FIG. 10 is a graph exemplarily showing spectrum distributions of light incident on the pixels of the image sensor of FIG. 8 ;
- FIG. 11 is a graph exemplarily showing spectrum distributions of light absorbed by the pixels of the image sensor of FIG. 8 ;
- FIGS. 12 , 13 , 14 and 15 are plan views schematically illustrating pixel structures of image sensors according to various other exemplary embodiments.
- FIGS. 1 , 2 , 3 and 4 are cross-sectional views schematically and exemplarily illustrating the color separation characteristics of various color separation elements 131 , 132 , 133 , and 134 .
- the color separation elements 131 , 132 , 133 , and 134 separate incident light according to a wavelength thereof to allow light of different wavelength bands to travel along different paths.
- the color separation elements 131 , 132 , 133 , and 134 change the traveling paths of light according to the wavelengths of incident lights by using diffraction or refraction characteristics of light varying according to the wavelength thereof.
- the color separation elements 131 , 132 , 133 , and 134 have a variety of shapes such as a rod shape having a transparent symmetrical or asymmetrical structure or a prism shape having an inclined surface, and various designs for a color separation element according to a desired spectrum distribution of an exit light may be available.
- the first color separation element 131 may be configured to allow (e.g., control) light C 1 of a first wavelength band of an incident light to travel in oblique directions toward the left and right sides and light C 2 of a second wavelength band of the incident light to travel in a direction along a center axis, that is, in a direction directly under the first color separation element 131 .
- the second color separation element 132 may be configured to allow light C 3 of a third wavelength band of the incident light to travel in oblique directions toward the left and right sides and the light C 2 of the second wavelength band of the incident light to travel in the direction along the center axis.
- FIG. 1 allow (e.g., control) light C 1 of a first wavelength band of an incident light to travel in oblique directions toward the left and right sides and light C 2 of a second wavelength band of the incident light to travel in a direction along a center axis, that is, in a direction directly under the first color separation element 131 .
- the third color separation element 133 may be configured to allow the light C 1 of the first wavelength band of the incident light to travel in an oblique direction toward the left side, the light C 2 of the second wavelength band of the incident light to travel in the direction along the center axis, and the light C 3 of the third wavelength band of the incident light to travel in the oblique direction toward the right side.
- the fourth color separation element 134 may be configured to allow the light C 2 of the second wavelength band of the incident light to travel in the direction along the center axis and light C 1 +C 3 of the other wavelength band of the incident light to travel in oblique directions toward the left and right sides.
- the light separated by the fourth color separation element 134 and traveling in the direction toward the left and right sides may be a mixed light of the light C 1 of the first wavelength band and the light C 3 of the third wavelength band.
- the light C 1 of the first wavelength band may be a red-based light
- the light C 2 of the second wavelength band may be a green-based light
- the light C 3 of the third wavelength band may be blue-based light.
- the present exemplary embodiment is not limited thereto.
- the first to fourth color separation elements 131 , 132 , 133 , and 134 each may be buried in a transparent dielectric layer 120 and fixed therein as illustrated in FIGS. 1 to 4 .
- a microlens 140 may be arranged on each of the first to fourth color separation elements 131 , 132 , 133 , and 134 to focus the incident light onto each of the first to fourth color separation elements 131 , 132 , 133 , and 134 .
- the arrangement of the microlens 140 is optional and may be omitted if the color separation efficiency of each of the first to fourth color separation elements 131 , 132 , 133 , and 134 is sufficiently high.
- the first to fourth color separation elements 131 , 132 , 133 , and 134 may be formed of a material having a refractive index higher than that of surroundings.
- the refractive indexes of the first to fourth color separation elements 131 , 132 , 133 , and 134 may be higher than that of the transparent dielectric layer 120 .
- the transparent dielectric layer 120 may be formed of SiO 2 or siloxane-based spin on glass (SOG).
- the first to fourth color separation elements 131 , 132 , 133 , and 134 may be formed of a high refractive material such as TiO 2 , SiN 3 , ZnS, ZnSe, and Si 3 N 4 .
- the detailed shapes and materials of the first to fourth color separation elements 131 , 132 , 133 , and 134 may be diversely selected according to desired color separation characteristics.
- FIG. 5 is a plan view schematically illustrating a pixel structure of an image sensor including the first and second color separation elements 131 and 132 of FIGS. 1 and 2 , according to an exemplary embodiment.
- the image sensor may have a Bayer pattern structure in which a first pixel 110 a and a third pixel 110 c are arranged in a first diagonal direction and two second pixels 110 b are arranged in a second diagonal direction crossing the first diagonal direction.
- FIG. 5 illustrates one unit having a Bayer pattern
- the image sensor may include a pixel array including a plurality of Bayer patterns arranged in two dimensions.
- the image sensor may include a first pixel row P 1 in which a plurality of second pixels 110 b and a plurality of third pixels 110 c are alternately arranged in a horizontal direction and a plurality of first pixels 110 a and a plurality of second pixels 110 b are alternately arranged in the horizontal direction.
- a plurality of first pixel rows P 1 and a plurality of second pixel rows P 2 may be alternately arranged in a vertical direction.
- the image sensor may include the second color separation element 132 that is arranged facing the second pixel 110 b in the first pixel row P 1 and the first color separation element 131 that is arranged facing the second pixel 110 b in the second pixel row P 2 .
- the first color separation element 131 may allow the light C 1 of the first wavelength band of the incident light to obliquely travel toward the left and right sides and the light C 2 of the second wavelength band of the incident light to travel in the direction directly under the first color separation element 131 .
- the light C 1 of the first wavelength band separated by the first color separation element 131 may be incident on the first pixel 110 a adjacent to the second pixel 110 b in the second pixel row P 2 and the light C 2 of the second wavelength band may be incident on the second pixel 110 b facing the first color separation element 131 in the second pixel row P 2 .
- the second color separation element 132 may allow the light C 3 of the third wavelength band of the incident light to obliquely travel toward the left and right sides and the light C 2 of the second wavelength band to travel in the direction directly under the second color separation element 132 .
- the light C 3 of the third wavelength band separated by the second color separation element 132 may be incident on the third pixel 110 c adjacent to the second pixel 110 b in the first pixel row P 1 and the light C 2 of the second wavelength band may be incident on the second pixel 110 b facing the second color separation element 132 in the first pixel row P 1 .
- FIG. 6A is a cross-sectional view taken along the line A-A′ of the first pixel row P 1 of the image sensor of FIG. 5 .
- the first pixel row P 1 of the image sensor may include a light sensing layer 110 that converts the intensity of incident light to an electric signal, a color filter layer 150 arranged on the light sensing layer 110 and that transmits light of a desired wavelength band only, the transparent dielectric layer 120 arranged on the color filter layer 150 , the second color separation element 132 buried in the transparent dielectric layer 120 and fixed therein, and the microlens 140 arranged on the transparent dielectric layer 120 .
- the second pixel 110 b and the third pixel 110 c may be arranged in the light sensing layer 110 in the first pixel row P 1 .
- the color filter layer 150 may include a second color filter CF 2 that is arranged on the second pixel 110 b and that transmits only the light C 2 of the second wavelength band and a third color filter CF 3 that is arranged on the third pixel 110 c and that transmits only the light C 3 of the third wavelength band.
- the second color separation element 132 may be arranged facing the second pixel 110 b.
- the light C 2 of the second wavelength band may be incident on the second pixel 110 b by passing through the second color filter CF 2 disposed directly under the second color separation element 132 .
- the light C 3 of the third wavelength band may be incident on the third pixel 110 c by obliquely traveling toward the left and right sides of the second color separation element 132 and passing through the third color filter CF 3 .
- the second and third color filters CF 2 and CF 3 are used, the light C 2 and C 3 that are color-separated to a considerable degree by the second color separation element 132 are incident on the second and third color filters CF 2 and CF 3 , respectively, and thus loss of light due to the color filter layer 150 is not severe. If the color separation by the second color separation element 132 is sufficient, the color filter layer 150 may be omitted. Alternatively, some of the second and third color filters CF 2 and CF 3 may be omitted.
- FIG. 6B is a cross-sectional view taken along the line B-B′ of the second pixel row P 2 of the image sensor of FIG. 5 .
- the second pixel row P 2 of the image sensor may include the light sensing layer 110 that converts the intensity of incident light to an electric signal, the color filter layer 150 arranged on the light sensing layer 110 and that transmits light of a desired wavelength band only, the transparent dielectric layer 120 arranged on the color filter layer 150 , the first color separation element 131 buried in the transparent dielectric layer 120 and fixed therein, and the microlens 140 arranged on the transparent dielectric layer 120 .
- the first pixel 110 a and the second pixel 110 b may be arranged in the light sensing layer 110 in the second pixel row P 2 .
- the color filter layer 150 may include the first color filter CF 1 that is arranged on the first pixel 110 a and that transmits only the light C 1 of the first wavelength band and the second color filter CF 2 that is arranged on the second pixel 110 b and that transmits only the light C 2 of the second wavelength band.
- the first color separation element 131 may be arranged facing the second pixel 110 b . Alternatively, some of the first and second color filters CF 1 and CF 2 may be omitted.
- the light C 2 of the second wavelength band may be incident on the second pixel 110 b by passing through the second color filter CF 2 disposed directly under the first color separation element 131 .
- the light C 1 of the first wavelength band may be incident on the first pixel 110 a by obliquely traveling toward the left and right sides of the first color separation element 131 and passing through the first color filter CF 1 .
- the color filter layer 150 may be omitted.
- the microlens 140 may be arranged extending in the third pixel 110 c disposed at the opposite sides of the second pixel 110 b . Also, in the second pixel row P 2 , the microlens 140 may be arranged extending in the first pixel 110 a disposed at the opposite sides of the second pixel 110 b .
- the image sensor according to the present exemplary embodiment may not include only the microlens 140 illustrated in FIGS. 6A and 6B .
- a microlens 142 (refer to FIG. 9A ) separately provided for each of the pixels 110 a , 110 b , and 110 c may be used, or the microlens 140 may be omitted.
- improved light use efficiency and superior color purity may be simultaneously achieved by using the first and second color separation elements 131 and 132 . Furthermore, since the Bayer pattern that is generally adopted in the image sensor is used without a change, the pixel structure and image processing algorithm of an image sensor of the related art do not need to be substantially changed.
- the image sensor according to the present exemplary embodiment may provide an image of superior quality by being applied to a variety of types of image pickup apparatuses.
- FIG. 7 is a plan view schematically illustrating a pixel structure of an image sensor including the third color separation element 133 of FIG. 3 , according to another exemplary embodiment.
- the image sensor may include a pixel array of a Bayer pattern structure that is the same as that of FIG. 5 .
- the image sensor illustrated in FIG. 7 may include a Bayer pattern having the first pixel 110 a and the third pixel 110 c arranged in a first diagonal direction and two second pixels 110 b arranged in a second diagonal direction crossing the first diagonal direction.
- the image sensor according to the present exemplary embodiment may include the third color separation element 133 that is arranged in the second diagonal direction. As illustrated in FIG. 7 , the third color separation element 133 may be arranged in the second diagonal direction facing the two second pixels 110 b . As described above, the third color separation element 133 may allow the light C 1 of the first wavelength band of incident light to obliquely travel in a direction toward the left side, the light C 2 of the second wavelength band of the incident light to travel in a direction directly under the third color separation element 133 , and the light C 3 of the third wavelength band of incident light to obliquely travel in a direction toward the right side.
- the light C 1 of the first wavelength band separated by the third color separation element 133 may be incident on the first pixel 110 a disposed at the left side of the third color separation element 133
- the light C 2 of the second wavelength band separated by the third color separation element 133 may be incident on the two second pixels 110 b disposed directly under the third color separation element 133
- the light C 3 of the third wavelength band separated by the third color separation element 133 may be incident on the third pixel 110 c disposed at the right side of the third color separation element 133 .
- the first to third color filters CF 1 , CF 2 , and CF 3 illustrated in FIGS. 6A and 6B may be further respectively arranged at the first to third pixels 110 a , 110 b , and 110 c corresponding thereto.
- the image sensor according to the present exemplary embodiment may further include a microlens 141 facing one unit having a Bayer pattern as indicated by a dotted line in FIG. 7 .
- the microlens 141 may face the first pixel 110 a and the third pixel 110 c arranged in the first diagonal direction and the two second pixels 110 b arranged in the second diagonal direction.
- the image sensor may not include only the microlens 141 of FIG. 7 .
- a microlens 143 (refer to FIG. 14 ) that is arranged in the second diagonal direction along the third color separation element 133 or the microlens 142 of FIG. 9A separately arranged for each of the pixels 110 a , 110 b , and 110 c may be used, or the microlens 140 may be omitted.
- FIG. 8 is a plan view schematically illustrating a pixel structure of an image sensor including the color separation element 134 of FIG. 4 , according to another exemplary embodiment.
- the image sensor may include a pixel array having a Bayer pattern structure that is the same as that of FIG. 5 .
- the image sensor illustrated in FIG. 8 may include a Bayer pattern having the first pixel 110 a and the third pixel 110 c arranged in the first diagonal direction and the two second pixels 110 b arranged in the second diagonal direction.
- the image sensor according to the present exemplary embodiment may further include the fourth color separation element 134 that is arranged facing the second pixel 110 b .
- the fourth color separation element 134 may be arranged facing the second pixel 110 b in the first pixel row P 1 and the second pixel 110 b in the second pixel row P 2 .
- the fourth color separation element 134 may allow the light C 2 of the second wavelength band of the incident light to travel in a direction directly under the fourth color separation element 134 and the light C 1 +C 3 of the other wavelength band of the incident light to travel in oblique directions toward the left and right sides.
- the light C 2 of the second wavelength band separated by the fourth color separation element 134 may be incident on the second pixel 110 b of each of the first and second pixel rows P 1 and P 2 .
- the light C 1 +C 3 of the other wavelength band that is, a mixed light of the first light C 1 of the first wavelength band and the third light C 3 of the third wavelength band, may be incident on each of the third pixel 110 c adjacent to the second pixel 110 b in the first pixel row P 1 and the first pixel 110 a adjacent to the second pixel 110 b in the second pixel row P 2 .
- the first light C 1 of the first wavelength band is based on red
- the second light C 2 of the second wavelength band is based on green
- the third light C 3 of the third wavelength band is based on blue
- a green light may be incident on the second pixel 110 b
- magenta light may be incident on the first and third pixels 110 a and 110 c.
- FIG. 9A is a cross-sectional view taken along the line C-C′ of the first pixel row P 1 in the image sensor of FIG. 8 .
- FIG. 9B is a cross-sectional view taken along the line D-D′ of the second pixel row P 2 in the image sensor of FIG. 8 .
- the image sensor according to the present exemplary embodiment may further include the light sensing layer 110 that converts the intensity of incident light to an electric signal, the color filter layer 150 arranged on the light sensing layer 110 , the transparent dielectric layer 120 arranged on the color filter layer 150 , the fourth color separation element 134 buried in the transparent dielectric layer 120 and fixed therein, and the microlens 142 arranged on the transparent dielectric layer 120 .
- the second pixel 110 b and the third pixel 110 c may be arranged in the light sensing layer 110 of the first pixel row P 1 .
- the first pixel 110 a and the second pixel 110 b may be arranged in the light sensing layer 110 of the second pixel row P 2 .
- the color filter layer 150 may include only the third color filter CF 3 that is arranged on the third pixel 110 c and, in the second pixel row P 2 , the color filter layer 150 may include only the first color filter CF 1 that is arranged on the first pixel 110 a .
- the third pixel 110 c may absorb only the light C 3 of the third wavelength band and the first pixel 110 a may absorb only the light C 1 of the first wavelength band. If the color separation efficiency is sufficiently high, a color filter may not be arranged on the second pixel 110 b . However, to increase color purity, the second color filter CF 2 may be arranged on the second pixel 110 b .
- the fourth color separation element 134 may be arranged facing the second pixel 110 b in the first pixel row P 1 and the second pixel row P 2 .
- the microlens 142 may be separately arranged at each of the pixels 110 a , 110 b , and 110 c .
- the microlens 142 having one pixel size may be arranged at each of the first pixel 110 a , the second pixel 110 b , and the third pixel 110 c . Then, only the light C 2 of the second wavelength band of the light incident on the microlens 142 disposed on the second pixel 110 b may be separated by the fourth color separation element 134 and provided to the second pixel 110 b .
- the light C 1 +C 3 of the first and third wavelength bands of the light incident on the microlens 142 disposed on the second pixel 110 b may be separated by the fourth color separation element 134 and provided to the first pixel 110 a adjacent to the opposite sides of the second pixel 110 b (in case of the second pixel row P 2 ) or the third pixel 110 c (in case of the first pixel row P 1 ).
- the light incident on the microlens 142 disposed on the first pixel 110 a or the third pixel 110 c is incident on the first pixel 110 a or the third pixel 110 c corresponding to the microlens 142 without a change.
- the light incident on the first and third pixels 110 a and 110 c is a sum of the light C 1 +C 3 of the first and third wavelength bands separated by the fourth color separation element 134 and a white light passing through the microlens 142 corresponding to the first and third pixels 110 a and 110 c.
- FIG. 10 is a graph exemplarily showing spectrum distributions of light incident on the pixels 110 a , 110 b , and 110 c of the image sensor of FIG. 8 , when the light C 1 of the first wavelength band is a red light, the light C 2 of the second wavelength band is a green light, and the light C 3 of the third wavelength band is a blue light.
- a graph indicated by a dotted line indicates a spectrum distribution of light incident on the second pixel 110 b , which shows that a green light component is the largest component. Also, in FIG.
- a graph indicated by a solid line indicates a spectrum distribution of light incident on the first and third pixels 110 a and 110 c , which shows that a red light component and a blue light component are larger than a green light component.
- the graph indicated by a solid line is biased as large as a light amount of the white light, compared to the graph indicated by a dotted line.
- FIG. 11 is a graph exemplarily showing spectrum distributions of light absorbed by the first to third pixels 110 a , 110 b , and 110 c of the image sensor of FIG. 8 In the graph of FIG.
- R filter denotes transmission characteristics of the first color filter CF 1
- G filter denotes transmission characteristics of the second color filter CF 2
- B filter denotes transmission characteristics of the third color filter CF 3 . Also, in the graph of FIG.
- R denotes an absorption spectrum of the first pixel 110 a
- Gr denotes an absorption spectrum of the second pixel 110 b adjacent to the first pixel 110 a , that is, the second pixel 110 b arranged in the second pixel row P 2
- Gb denotes an absorption spectrum of the second pixel 110 b adjacent to the third pixel 110 c , that is, the second pixel 110 b arranged in the first pixel row P 1
- B denotes an absorption spectrum of the third pixel 110 c .
- a high light absorption amount may be obtained at all of the first to third pixels 110 a , 110 b , and 110 c . Accordingly, an increase in the amplitude of a signal in the image sensor may be expected.
- FIGS. 12 to 15 are plan views schematically illustrating pixel structures of image sensors according to various other exemplary embodiments.
- an image sensor may include the fourth color separation elements 134 and a plurality of fifth color separation elements 135 which are alternately arranged at the second pixels 110 b .
- the fourth color separation element 134 may be arranged at the second pixel 110 b that is the first one from the left side in the first pixel row P 1
- the fifth color separation element 135 may be arranged at the second pixel 110 b that is the second one from the left side in the first pixel row P 1 .
- the fifth color separation element 135 may be arranged at the second pixel 110 b that is the first one from the left side in the second pixel row P 2
- the fourth color separation element 134 may be arranged at the second pixel 110 b that is the second one from the left side in the second pixel row P 2
- the other structure of the image sensor of FIG. 12 may be the same as that of the image sensor of FIG. 8 .
- the fifth color separation element 135 has the same color separation characteristics as those of the fourth color separation element 134 and is rotated by 90° with respect to the fourth color separation element 134 .
- the fourth color separation element 134 may allow the light C 2 of the second wavelength band to travel in a direction directly under the fourth color separation element 134 and the light C 1 +C 3 of the other wavelength band to travel in a first lateral direction, for example, in a horizontal direction in FIG. 12 .
- the fifth color separation element 135 may allow the light C 2 of the second wavelength band to travel in a direction directly under the fifth color separation element 135 and the light C 1 +C 3 of the other wavelength band to travel in a second lateral direction perpendicular to the first lateral direction, for example, in a vertical direction in FIG. 12 .
- the first pixel 110 a and the third pixel 110 c receive the light C 1 +C 3 of the first and third wavelength bands from the opposite side surfaces facing each other.
- the first pixel 110 a and the third pixel 110 c may receive the light C 1 +C 3 of the first and third wavelength bands from the two side surfaces vertically adjoining each other.
- an image sensor may include a plurality of sixth color separation elements 136 arranged at the second pixels 110 b .
- the sixth color separation element 136 may be configured to allow the light C 2 of the second wavelength band to travel in a direction directly under the sixth color separation element 136 and the light C 1 +C 3 of the other wavelength band to travel in four different directions perpendicular to one another.
- the sixth color separation element 136 may be formed by combining the fourth color separation element 134 and the fifth color separation element 135 .
- the sixth color separation element 136 may be formed by simultaneously arranging the fourth color separation element 134 and the fifth color separation element 135 at one second pixel 110 b .
- the first pixel 110 a and the third pixel 110 c may receive the light C 1 +C 3 of the first and third wavelength bands from all four side surfaces.
- the other structure of the image sensor of FIG. 13 may be the same as that of the image sensor of FIG. 8 .
- an image sensor may include a seventh color separation element 137 arranged in a diagonal direction.
- the seventh color separation element 137 may be arranged facing the second pixels 110 b in the second diagonal direction.
- the seventh color separation element 137 may correspond to the fourth color separation element 134 that is oriented in the second diagonal direction. Accordingly, the seventh color separation element 137 may be configured to allow the light c 2 of the second wavelength band to travel in a direction directly under the seventh color separation element 137 and the light C 1 +C 3 of the other wavelength band to travel in the first diagonal direction.
- the image sensor may further include a plurality of microlenses 143 arranged in the second diagonal direction along the seventh color separation element 137 .
- the first pixel 110 a and the third pixel 110 c may receive the light C 1 +C 3 of the first and third wavelength bands from the first diagonal direction.
- an image sensor may include the seventh color separation element 137 arranged facing the second pixels 110 b in the second diagonal direction and an eighth color separation element 138 arranged facing the second pixels 110 b in the first diagonal direction.
- the seventh color separation element 137 may be configured to allow the light C 2 of the second wavelength band to travel in a direction directly under the seventh color separation element 137 and the light C 1 +C 3 of the other wavelength band to travel in the first diagonal direction.
- the eighth color separation element 138 may be configured to allow the light C 2 of the second wavelength band to travel in a direction directly under the seventh color separation element 137 and the light C 1 +C 3 of the other wavelength band to travel in the second diagonal direction.
- the eighth color separation element 138 has the same color separation characteristics as those of the seventh color separation element 137 and is rotated by 90° with respect to the seventh color separation element 137 , or may correspond to the fourth color separation element 134 that is oriented in the first diagonal direction.
- the first pixel 110 a and the third pixel 110 c may receive the light C 1 +C 3 of the first and third wavelength bands respectively from the first and second diagonal directions.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Theoretical Computer Science (AREA)
Abstract
An image sensor includes a pixel array having a Bayer pattern structure including a first pixel row in which first pixels and second pixels are alternately provided and a second pixel row in which additional ones of the second pixels and third pixels are alternately provided, a first element to control light of a first wavelength band to travel in directions toward left and right sides of the first element and to control light of a second wavelength band of the incident light to travel in a direction directly under the first element, and a second element to control light of a third wavelength band to travel in the directions toward the left and right sides of the second element and to control the light of the second wavelength band to travel in a direction directly under the second element.
Description
- This application claims the benefit of Korean Patent Application No. 10-2014-0083233, filed on Jul. 3, 2014, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
- 1. Field
- The exemplary embodiments relate to an image sensor including a color separation element and an image pickup apparatus including the image sensor, and more particularly, to an image sensor having an improved light use efficiency by using a color separation element, and an image pickup apparatus including the image sensor.
- 2. Description of the Related Art
- Color display devices or color image sensors usually display an image of various colors or detect a color of incident light by using a color filter. An RGB color filter method, in which, for example, a green filter is arranged at two pixels of four pixels and a blue filter and a red filter are arranged in the other two pixels, is most widely employed by a currently used color display device or color image sensor. In addition to the RGB color filter method, a CYGM color filter method may be employed in which color filters of cyan, yellow, green, and magenta, which are complementary colors, are respectively arranged at four pixels.
- However, a color filter may have a low light use efficiency because the color filter absorbs light of colors other than a color corresponding to the color filter. For example, when an RGB color filter is in use, only ⅓ of the incident light is transmitted and the other portion, that is, ⅔, of the incident light is absorbed. Accordingly, the light use efficiency may be about 33%. Accordingly, for the color display device or a color image sensor, most of a light loss is generated in the color filter.
- Recently, to improve the light use efficiency of the color display device or color image sensor, a color separation element is being used instead of the color filter. The color separation element may separate the color of an incident light by using the diffraction or refraction characteristics of light that vary according to a wavelength of the light. The colors separated by the color separation element may be provided to pixels corresponding to the colors, respectively.
- Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented exemplary embodiments.
- According to an aspect of an exemplary embodiment, there is provided an image sensor including a pixel array including Bayer patterns, each of the Bayer patterns including a first pixel and a third pixel provided in a first diagonal direction and two second pixels provided in a second diagonal direction crossing the first diagonal direction, and a color separation element provided to face the second pixels in the second diagonal direction, wherein the color separation element is configured to control light of a first wavelength band of incident light to travel in a first lateral direction of the color separation element toward the first pixel, to control light of a third wavelength band of the incident light to travel in a second lateral direction of the color separation element toward the third pixel, and to control light of a second wavelength band of the incident light to travel in a downward direction of the color separation element toward the second pixels.
- The image sensor may further include a color filter layer that is provided on the pixel array, wherein the color filter layer includes at least one of a first color filter provided adjacent to the first pixel, a second color filter provided adjacent to the second pixel, and a third color filter provided adjacent to the third pixel.
- The image sensor may further include a transparent dielectric layer provided on the color filter layer, and a microlens provided on the transparent dielectric layer.
- The microlens may be provided to face the pixel array including the Bayer patterns.
- According to another aspect of an exemplary embodiment, there is provided an image sensor including a pixel array including Bayer patterns, each of the Bayer patterns including a first pixel and a third pixel provided in a first diagonal direction and two second pixels provided in a second diagonal direction crossing the first diagonal direction, color separation elements provided to face the second pixels, respectively, and a color filter layer provided on the pixel array, wherein each of the color separation elements is configured to control light of a second wavelength band of incident light to travel in a downward direction of the color separation element and to control mixed light including a mixture of light of a first wavelength band of the incident light and light of a third wavelength band of the incident light to travel in directions toward left and right sides of the color separation element.
- One of the color separation elements may include a first color separation element provided in a first direction and a second color separation element provided in a second direction perpendicular to the first direction.
- The first color separation element and the second color element may be alternately provided to face the second pixels.
- Both of the first color separation element and the second color element may be provided adjacent to one of the second pixels.
- The color separation elements may be oriented in the second diagonal direction.
- One of the color separation elements may include a first color separation element oriented in the first diagonal direction and a second color separation element oriented in the second diagonal direction.
- The image sensor may further include a transparent dielectric layer provided on the color filter layer, and microlenses provided on the transparent dielectric layer, wherein the microlenses are separately provided at each of the first, second, and third pixels.
- The light of the second wavelength band separated by the color separation elements may be incident on the second pixels and the mixed light of the first and second wavelength bands and a white light may be incident together on the first and third pixels.
- The color filter layer may include a first color filter provided on the first pixel and configured to transmit the light of the first wavelength band and a third color filter provided on the third pixel and configured to transmit the light of the third wavelength band.
- The light of the first wavelength band may be red light, the light of the second wavelength band may be green light, and the light of the third wavelength band may be blue light.
- According to another aspect of an exemplary embodiment, there is provided an image sensor including a pixel array including a first pixel and a third pixel provided in a first diagonal direction and two second pixels provided in a second diagonal direction crossing the first diagonal direction, and a first color separation element oriented in the second diagonal direction and facing the second pixels.
- The image sensor may further include a second color separation element oriented in the first diagonal direction and facing the second pixels.
- The first color separation element may be configured to control light of a first wavelength band of incident light to travel in a first lateral direction of the first color separation element toward the first pixel, to control light of a third wavelength band of the incident light to travel in a second lateral direction of the first color separation element toward the third pixel, and to control light of a second wavelength band of the incident light to travel in a downward direction of the first color separation element toward the second pixels.
- The second color separation element may be configured to control light of a first wavelength band of incident light to travel in a first lateral direction of the second color separation element toward the first pixel, to control light of a third wavelength band of the incident light to travel in a second lateral direction of the second color separation element toward the third pixel, and to control light of a second wavelength band of the incident light to travel in a downward direction of the second color separation element toward the second pixels.
- The image sensor may further include a color filter layer that is provided on the pixel array, wherein the color filter layer may include at least one of a first color filter provided adjacent to the first pixel, a second color filter provided adjacent to one of the second pixels, and a third color filter provided adjacent to the third pixel.
- The image sensor may further include a transparent dielectric layer provided on the color filter layer, wherein the first color separation element may be buried in the transparent dielectric layer.
- These and/or other aspects will become apparent and more readily appreciated from the following description of the exemplary embodiments, taken in conjunction with the accompanying drawings in which:
-
FIGS. 1 , 2, 3 and 4 are cross-sectional views schematically and exemplarily illustrating the color separation characteristics of various color separation elements; -
FIG. 5 is a plan view schematically illustrating a pixel structure of an image sensor including the color separation elements ofFIGS. 1 and 2 , according to an exemplary embodiment; -
FIG. 6A is a cross-sectional view taken along the line A-A′ of the image sensor ofFIG. 5 ; -
FIG. 6B is a cross-sectional view taken along the line B-B′ of the image sensor ofFIG. 5 ; -
FIG. 7 is a plan view schematically illustrating a pixel structure of an image sensor including the color separation element ofFIG. 3 , according to another exemplary embodiment; -
FIG. 8 is a plan view schematically illustrating a pixel structure of an image sensor including the color separation element ofFIG. 4 , according to another exemplary embodiment; -
FIG. 9A is a cross-sectional view taken along the line C-C′ of the image sensor ofFIG. 8 ; -
FIG. 9B is a cross-sectional view taken along the line D-D′ of the image sensor ofFIG. 8 ; -
FIG. 10 is a graph exemplarily showing spectrum distributions of light incident on the pixels of the image sensor ofFIG. 8 ; -
FIG. 11 is a graph exemplarily showing spectrum distributions of light absorbed by the pixels of the image sensor ofFIG. 8 ; and -
FIGS. 12 , 13, 14 and 15 are plan views schematically illustrating pixel structures of image sensors according to various other exemplary embodiments. - Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present exemplary embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the exemplary embodiments are merely described below, by referring to the figures, to explain aspects of the exemplary embodiments. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.
- An image sensor including a color separation element, and an image pickup apparatus including the image sensor, are described in detail with reference to the accompanying drawings. In the following descriptions, like reference numerals refer to like elements. In the drawings, the size of each element is exaggerated for clarity and convenience of explanation. Also, in the following description of a layer structure, when a layer is described to exist “on” or “above” another layer, the layer may exist directly on or indirectly above the other layer, or a third layer may be interposed therebetween.
-
FIGS. 1 , 2, 3 and 4 are cross-sectional views schematically and exemplarily illustrating the color separation characteristics of variouscolor separation elements color separation elements color separation elements color separation elements - For example, referring to
FIG. 1 , the firstcolor separation element 131 may be configured to allow (e.g., control) light C1 of a first wavelength band of an incident light to travel in oblique directions toward the left and right sides and light C2 of a second wavelength band of the incident light to travel in a direction along a center axis, that is, in a direction directly under the firstcolor separation element 131. Also, referring toFIG. 2 , the secondcolor separation element 132 may be configured to allow light C3 of a third wavelength band of the incident light to travel in oblique directions toward the left and right sides and the light C2 of the second wavelength band of the incident light to travel in the direction along the center axis. Also, referring toFIG. 3 , the thirdcolor separation element 133 may be configured to allow the light C1 of the first wavelength band of the incident light to travel in an oblique direction toward the left side, the light C2 of the second wavelength band of the incident light to travel in the direction along the center axis, and the light C3 of the third wavelength band of the incident light to travel in the oblique direction toward the right side. Referring toFIG. 4 , the fourthcolor separation element 134 may be configured to allow the light C2 of the second wavelength band of the incident light to travel in the direction along the center axis and light C1+C3 of the other wavelength band of the incident light to travel in oblique directions toward the left and right sides. In other words, the light separated by the fourthcolor separation element 134 and traveling in the direction toward the left and right sides may be a mixed light of the light C1 of the first wavelength band and the light C3 of the third wavelength band. For example, the light C1 of the first wavelength band may be a red-based light, the light C2 of the second wavelength band may be a green-based light, and the light C3 of the third wavelength band may be blue-based light. However, the present exemplary embodiment is not limited thereto. - The first to fourth
color separation elements transparent dielectric layer 120 and fixed therein as illustrated inFIGS. 1 to 4 . Amicrolens 140 may be arranged on each of the first to fourthcolor separation elements color separation elements microlens 140 is optional and may be omitted if the color separation efficiency of each of the first to fourthcolor separation elements - In order to sufficiently diffract and refract the incident light, the first to fourth
color separation elements color separation elements transparent dielectric layer 120. For example, thetransparent dielectric layer 120 may be formed of SiO2 or siloxane-based spin on glass (SOG). The first to fourthcolor separation elements color separation elements -
FIG. 5 is a plan view schematically illustrating a pixel structure of an image sensor including the first and secondcolor separation elements FIGS. 1 and 2 , according to an exemplary embodiment. Referring toFIG. 5 , the image sensor may have a Bayer pattern structure in which afirst pixel 110 a and athird pixel 110 c are arranged in a first diagonal direction and twosecond pixels 110 b are arranged in a second diagonal direction crossing the first diagonal direction. AlthoughFIG. 5 illustrates one unit having a Bayer pattern, the image sensor may include a pixel array including a plurality of Bayer patterns arranged in two dimensions. For example, the image sensor may include a first pixel row P1 in which a plurality ofsecond pixels 110 b and a plurality ofthird pixels 110 c are alternately arranged in a horizontal direction and a plurality offirst pixels 110 a and a plurality ofsecond pixels 110 b are alternately arranged in the horizontal direction. A plurality of first pixel rows P1 and a plurality of second pixel rows P2 may be alternately arranged in a vertical direction. - Also, the image sensor may include the second
color separation element 132 that is arranged facing thesecond pixel 110 b in the first pixel row P1 and the firstcolor separation element 131 that is arranged facing thesecond pixel 110 b in the second pixel row P2. As described above, the firstcolor separation element 131 may allow the light C1 of the first wavelength band of the incident light to obliquely travel toward the left and right sides and the light C2 of the second wavelength band of the incident light to travel in the direction directly under the firstcolor separation element 131. Accordingly, the light C1 of the first wavelength band separated by the firstcolor separation element 131 may be incident on thefirst pixel 110 a adjacent to thesecond pixel 110 b in the second pixel row P2 and the light C2 of the second wavelength band may be incident on thesecond pixel 110 b facing the firstcolor separation element 131 in the second pixel row P2. Also, the secondcolor separation element 132 may allow the light C3 of the third wavelength band of the incident light to obliquely travel toward the left and right sides and the light C2 of the second wavelength band to travel in the direction directly under the secondcolor separation element 132. Accordingly, the light C3 of the third wavelength band separated by the secondcolor separation element 132 may be incident on thethird pixel 110 c adjacent to thesecond pixel 110 b in the first pixel row P1 and the light C2 of the second wavelength band may be incident on thesecond pixel 110 b facing the secondcolor separation element 132 in the first pixel row P1. -
FIG. 6A is a cross-sectional view taken along the line A-A′ of the first pixel row P1 of the image sensor ofFIG. 5 . Referring toFIG. 6A , the first pixel row P1 of the image sensor may include alight sensing layer 110 that converts the intensity of incident light to an electric signal, acolor filter layer 150 arranged on thelight sensing layer 110 and that transmits light of a desired wavelength band only, thetransparent dielectric layer 120 arranged on thecolor filter layer 150, the secondcolor separation element 132 buried in thetransparent dielectric layer 120 and fixed therein, and themicrolens 140 arranged on thetransparent dielectric layer 120. Thesecond pixel 110 b and thethird pixel 110 c may be arranged in thelight sensing layer 110 in the first pixel row P1. Thecolor filter layer 150 may include a second color filter CF2 that is arranged on thesecond pixel 110 b and that transmits only the light C2 of the second wavelength band and a third color filter CF3 that is arranged on thethird pixel 110 c and that transmits only the light C3 of the third wavelength band. The secondcolor separation element 132 may be arranged facing thesecond pixel 110 b. - As illustrated in
FIG. 6A , of the light incident on the secondcolor separation element 132, the light C2 of the second wavelength band may be incident on thesecond pixel 110 b by passing through the second color filter CF2 disposed directly under the secondcolor separation element 132. Also, the light C3 of the third wavelength band may be incident on thethird pixel 110 c by obliquely traveling toward the left and right sides of the secondcolor separation element 132 and passing through the third color filter CF3. Even when the second and third color filters CF2 and CF3 are used, the light C2 and C3 that are color-separated to a considerable degree by the secondcolor separation element 132 are incident on the second and third color filters CF2 and CF3, respectively, and thus loss of light due to thecolor filter layer 150 is not severe. If the color separation by the secondcolor separation element 132 is sufficient, thecolor filter layer 150 may be omitted. Alternatively, some of the second and third color filters CF2 and CF3 may be omitted. -
FIG. 6B is a cross-sectional view taken along the line B-B′ of the second pixel row P2 of the image sensor ofFIG. 5 . Referring toFIG. 6B , the second pixel row P2 of the image sensor may include thelight sensing layer 110 that converts the intensity of incident light to an electric signal, thecolor filter layer 150 arranged on thelight sensing layer 110 and that transmits light of a desired wavelength band only, thetransparent dielectric layer 120 arranged on thecolor filter layer 150, the firstcolor separation element 131 buried in thetransparent dielectric layer 120 and fixed therein, and themicrolens 140 arranged on thetransparent dielectric layer 120. Thefirst pixel 110 a and thesecond pixel 110 b may be arranged in thelight sensing layer 110 in the second pixel row P2. Thecolor filter layer 150 may include the first color filter CF1 that is arranged on thefirst pixel 110 a and that transmits only the light C1 of the first wavelength band and the second color filter CF2 that is arranged on thesecond pixel 110 b and that transmits only the light C2 of the second wavelength band. The firstcolor separation element 131 may be arranged facing thesecond pixel 110 b. Alternatively, some of the first and second color filters CF1 and CF2 may be omitted. - As illustrated in
FIG. 6B , of the light incident on the firstcolor separation element 131, the light C2 of the second wavelength band may be incident on thesecond pixel 110 b by passing through the second color filter CF2 disposed directly under the firstcolor separation element 131. Also, the light C1 of the first wavelength band may be incident on thefirst pixel 110 a by obliquely traveling toward the left and right sides of the firstcolor separation element 131 and passing through the first color filter CF1. In the second pixel row P2, if the color separation by the firstcolor separation element 131 is sufficient, thecolor filter layer 150 may be omitted. - As illustrated in
FIGS. 6A and 6B , in the first pixel row P1, themicrolens 140 may be arranged extending in thethird pixel 110 c disposed at the opposite sides of thesecond pixel 110 b. Also, in the second pixel row P2, themicrolens 140 may be arranged extending in thefirst pixel 110 a disposed at the opposite sides of thesecond pixel 110 b. However, the image sensor according to the present exemplary embodiment may not include only themicrolens 140 illustrated inFIGS. 6A and 6B . For example, a microlens 142 (refer toFIG. 9A ) separately provided for each of thepixels microlens 140 may be omitted. - In the image sensor according to the present exemplary embodiment, improved light use efficiency and superior color purity may be simultaneously achieved by using the first and second
color separation elements -
FIG. 7 is a plan view schematically illustrating a pixel structure of an image sensor including the thirdcolor separation element 133 ofFIG. 3 , according to another exemplary embodiment. Referring toFIG. 7 , the image sensor may include a pixel array of a Bayer pattern structure that is the same as that ofFIG. 5 . In other words, the image sensor illustrated inFIG. 7 may include a Bayer pattern having thefirst pixel 110 a and thethird pixel 110 c arranged in a first diagonal direction and twosecond pixels 110 b arranged in a second diagonal direction crossing the first diagonal direction. - Also, the image sensor according to the present exemplary embodiment may include the third
color separation element 133 that is arranged in the second diagonal direction. As illustrated inFIG. 7 , the thirdcolor separation element 133 may be arranged in the second diagonal direction facing the twosecond pixels 110 b. As described above, the thirdcolor separation element 133 may allow the light C1 of the first wavelength band of incident light to obliquely travel in a direction toward the left side, the light C2 of the second wavelength band of the incident light to travel in a direction directly under the thirdcolor separation element 133, and the light C3 of the third wavelength band of incident light to obliquely travel in a direction toward the right side. Accordingly, the light C1 of the first wavelength band separated by the thirdcolor separation element 133 may be incident on thefirst pixel 110 a disposed at the left side of the thirdcolor separation element 133, and the light C2 of the second wavelength band separated by the thirdcolor separation element 133 may be incident on the twosecond pixels 110 b disposed directly under the thirdcolor separation element 133. Also, the light C3 of the third wavelength band separated by the thirdcolor separation element 133 may be incident on thethird pixel 110 c disposed at the right side of the thirdcolor separation element 133. In order to prevent mixture of colors, the first to third color filters CF1, CF2, and CF3 illustrated inFIGS. 6A and 6B may be further respectively arranged at the first tothird pixels - Also, the image sensor according to the present exemplary embodiment may further include a
microlens 141 facing one unit having a Bayer pattern as indicated by a dotted line inFIG. 7 . In this case, themicrolens 141 may face thefirst pixel 110 a and thethird pixel 110 c arranged in the first diagonal direction and the twosecond pixels 110 b arranged in the second diagonal direction. However, the image sensor may not include only themicrolens 141 ofFIG. 7 . For example, a microlens 143 (refer toFIG. 14 ) that is arranged in the second diagonal direction along the thirdcolor separation element 133 or themicrolens 142 ofFIG. 9A separately arranged for each of thepixels microlens 140 may be omitted. -
FIG. 8 is a plan view schematically illustrating a pixel structure of an image sensor including thecolor separation element 134 ofFIG. 4 , according to another exemplary embodiment. Referring toFIG. 8 , the image sensor may include a pixel array having a Bayer pattern structure that is the same as that ofFIG. 5 . In other words, the image sensor illustrated inFIG. 8 may include a Bayer pattern having thefirst pixel 110 a and thethird pixel 110 c arranged in the first diagonal direction and the twosecond pixels 110 b arranged in the second diagonal direction. - Also, the image sensor according to the present exemplary embodiment may further include the fourth
color separation element 134 that is arranged facing thesecond pixel 110 b. In other words, the fourthcolor separation element 134 may be arranged facing thesecond pixel 110 b in the first pixel row P1 and thesecond pixel 110 b in the second pixel row P2. As described above, the fourthcolor separation element 134 may allow the light C2 of the second wavelength band of the incident light to travel in a direction directly under the fourthcolor separation element 134 and the light C1+C3 of the other wavelength band of the incident light to travel in oblique directions toward the left and right sides. Accordingly, the light C2 of the second wavelength band separated by the fourthcolor separation element 134 may be incident on thesecond pixel 110 b of each of the first and second pixel rows P1 and P2. Also, the light C1+C3 of the other wavelength band, that is, a mixed light of the first light C1 of the first wavelength band and the third light C3 of the third wavelength band, may be incident on each of thethird pixel 110 c adjacent to thesecond pixel 110 b in the first pixel row P1 and thefirst pixel 110 a adjacent to thesecond pixel 110 b in the second pixel row P2. For example, when the first light C1 of the first wavelength band is based on red, the second light C2 of the second wavelength band is based on green, and the third light C3 of the third wavelength band is based on blue, a green light may be incident on thesecond pixel 110 b and magenta light may be incident on the first andthird pixels -
FIG. 9A is a cross-sectional view taken along the line C-C′ of the first pixel row P1 in the image sensor ofFIG. 8 .FIG. 9B is a cross-sectional view taken along the line D-D′ of the second pixel row P2 in the image sensor ofFIG. 8 . Referring toFIGS. 9A and 9B , the image sensor according to the present exemplary embodiment may further include thelight sensing layer 110 that converts the intensity of incident light to an electric signal, thecolor filter layer 150 arranged on thelight sensing layer 110, thetransparent dielectric layer 120 arranged on thecolor filter layer 150, the fourthcolor separation element 134 buried in thetransparent dielectric layer 120 and fixed therein, and themicrolens 142 arranged on thetransparent dielectric layer 120. - The
second pixel 110 b and thethird pixel 110 c may be arranged in thelight sensing layer 110 of the first pixel row P1. Thefirst pixel 110 a and thesecond pixel 110 b may be arranged in thelight sensing layer 110 of the second pixel row P2. Also, in the first pixel row P1, thecolor filter layer 150 may include only the third color filter CF3 that is arranged on thethird pixel 110 c and, in the second pixel row P2, thecolor filter layer 150 may include only the first color filter CF1 that is arranged on thefirst pixel 110 a. Accordingly, with respect to the light C1+C3 that is a mixed light of the first light C1 of the first wavelength band and the third light C3 of the third wavelength band, thethird pixel 110 c may absorb only the light C3 of the third wavelength band and thefirst pixel 110 a may absorb only the light C1 of the first wavelength band. If the color separation efficiency is sufficiently high, a color filter may not be arranged on thesecond pixel 110 b. However, to increase color purity, the second color filter CF2 may be arranged on thesecond pixel 110 b. The fourthcolor separation element 134 may be arranged facing thesecond pixel 110 b in the first pixel row P1 and the second pixel row P2. - Also, the
microlens 142 may be separately arranged at each of thepixels microlens 142 having one pixel size may be arranged at each of thefirst pixel 110 a, thesecond pixel 110 b, and thethird pixel 110 c. Then, only the light C2 of the second wavelength band of the light incident on themicrolens 142 disposed on thesecond pixel 110 b may be separated by the fourthcolor separation element 134 and provided to thesecond pixel 110 b. The light C1+C3 of the first and third wavelength bands of the light incident on themicrolens 142 disposed on thesecond pixel 110 b may be separated by the fourthcolor separation element 134 and provided to thefirst pixel 110 a adjacent to the opposite sides of thesecond pixel 110 b (in case of the second pixel row P2) or thethird pixel 110 c (in case of the first pixel row P1). The light incident on themicrolens 142 disposed on thefirst pixel 110 a or thethird pixel 110 c is incident on thefirst pixel 110 a or thethird pixel 110 c corresponding to themicrolens 142 without a change. Accordingly, the light incident on the first andthird pixels color separation element 134 and a white light passing through themicrolens 142 corresponding to the first andthird pixels - For example,
FIG. 10 is a graph exemplarily showing spectrum distributions of light incident on thepixels FIG. 8 , when the light C1 of the first wavelength band is a red light, the light C2 of the second wavelength band is a green light, and the light C3 of the third wavelength band is a blue light. InFIG. 10 , a graph indicated by a dotted line indicates a spectrum distribution of light incident on thesecond pixel 110 b, which shows that a green light component is the largest component. Also, inFIG. 10 , a graph indicated by a solid line indicates a spectrum distribution of light incident on the first andthird pixels third pixels FIG. 10 , the graph indicated by a solid line is biased as large as a light amount of the white light, compared to the graph indicated by a dotted line. - As described above, since the light incident on each of the first to
third pixels respective pixels FIG. 11 is a graph exemplarily showing spectrum distributions of light absorbed by the first tothird pixels FIG. 8 In the graph ofFIG. 11 , “R filter” denotes transmission characteristics of the first color filter CF1, “G filter” denotes transmission characteristics of the second color filter CF2, and “B filter” denotes transmission characteristics of the third color filter CF3. Also, in the graph ofFIG. 11 , “R” denotes an absorption spectrum of thefirst pixel 110 a, “Gr” denotes an absorption spectrum of thesecond pixel 110 b adjacent to thefirst pixel 110 a, that is, thesecond pixel 110 b arranged in the second pixel row P2, “Gb” denotes an absorption spectrum of thesecond pixel 110 b adjacent to thethird pixel 110 c, that is, thesecond pixel 110 b arranged in the first pixel row P1, and “B” denotes an absorption spectrum of thethird pixel 110 c. As illustrated inFIG. 11 , a high light absorption amount may be obtained at all of the first tothird pixels -
FIGS. 12 to 15 are plan views schematically illustrating pixel structures of image sensors according to various other exemplary embodiments. - First, referring to
FIG. 12 , an image sensor according to the present exemplary embodiment may include the fourthcolor separation elements 134 and a plurality of fifthcolor separation elements 135 which are alternately arranged at thesecond pixels 110 b. For example, the fourthcolor separation element 134 may be arranged at thesecond pixel 110 b that is the first one from the left side in the first pixel row P1, and the fifthcolor separation element 135 may be arranged at thesecond pixel 110 b that is the second one from the left side in the first pixel row P1. The fifthcolor separation element 135 may be arranged at thesecond pixel 110 b that is the first one from the left side in the second pixel row P2, and the fourthcolor separation element 134 may be arranged at thesecond pixel 110 b that is the second one from the left side in the second pixel row P2. The other structure of the image sensor ofFIG. 12 may be the same as that of the image sensor ofFIG. 8 . - The fifth
color separation element 135 has the same color separation characteristics as those of the fourthcolor separation element 134 and is rotated by 90° with respect to the fourthcolor separation element 134. For example, the fourthcolor separation element 134 may allow the light C2 of the second wavelength band to travel in a direction directly under the fourthcolor separation element 134 and the light C1+C3 of the other wavelength band to travel in a first lateral direction, for example, in a horizontal direction inFIG. 12 . In contrast, the fifthcolor separation element 135 may allow the light C2 of the second wavelength band to travel in a direction directly under the fifthcolor separation element 135 and the light C1+C3 of the other wavelength band to travel in a second lateral direction perpendicular to the first lateral direction, for example, in a vertical direction inFIG. 12 . - In the image sensor of
FIG. 8 , thefirst pixel 110 a and thethird pixel 110 c receive the light C1+C3 of the first and third wavelength bands from the opposite side surfaces facing each other. However, for the image sensor ofFIG. 12 , as indicated by arrows, thefirst pixel 110 a and thethird pixel 110 c may receive the light C1+C3 of the first and third wavelength bands from the two side surfaces vertically adjoining each other. - Also, referring to
FIG. 13 , an image sensor according to the present exemplary embodiment may include a plurality of sixthcolor separation elements 136 arranged at thesecond pixels 110 b. The sixthcolor separation element 136 may be configured to allow the light C2 of the second wavelength band to travel in a direction directly under the sixthcolor separation element 136 and the light C1+C3 of the other wavelength band to travel in four different directions perpendicular to one another. For example, the sixthcolor separation element 136 may be formed by combining the fourthcolor separation element 134 and the fifthcolor separation element 135. In other words, the sixthcolor separation element 136 may be formed by simultaneously arranging the fourthcolor separation element 134 and the fifthcolor separation element 135 at onesecond pixel 110 b. For the image sensor ofFIG. 13 , as indicated by an arrow, thefirst pixel 110 a and thethird pixel 110 c may receive the light C1+C3 of the first and third wavelength bands from all four side surfaces. The other structure of the image sensor ofFIG. 13 may be the same as that of the image sensor ofFIG. 8 . - Also, referring to
FIG. 14 , an image sensor according to the present exemplary embodiment may include a seventhcolor separation element 137 arranged in a diagonal direction. For example, assuming that thefirst pixel 110 a and thethird pixel 110 c are arranged in a first diagonal direction and thesecond pixels 110 b are arranged in a second diagonal direction crossing the first diagonal direction, the seventhcolor separation element 137 may be arranged facing thesecond pixels 110 b in the second diagonal direction. The seventhcolor separation element 137 may correspond to the fourthcolor separation element 134 that is oriented in the second diagonal direction. Accordingly, the seventhcolor separation element 137 may be configured to allow the light c2 of the second wavelength band to travel in a direction directly under the seventhcolor separation element 137 and the light C1+C3 of the other wavelength band to travel in the first diagonal direction. - Also, as indicated by a dotted line, the image sensor may further include a plurality of
microlenses 143 arranged in the second diagonal direction along the seventhcolor separation element 137. For the image sensor ofFIG. 14 , as indicated by an arrow, thefirst pixel 110 a and thethird pixel 110 c may receive the light C1+C3 of the first and third wavelength bands from the first diagonal direction. - Referring to
FIG. 15 , an image sensor according to the present exemplary embodiment may include the seventhcolor separation element 137 arranged facing thesecond pixels 110 b in the second diagonal direction and an eighthcolor separation element 138 arranged facing thesecond pixels 110 b in the first diagonal direction. The seventhcolor separation element 137 may be configured to allow the light C2 of the second wavelength band to travel in a direction directly under the seventhcolor separation element 137 and the light C1+C3 of the other wavelength band to travel in the first diagonal direction. The eighthcolor separation element 138 may be configured to allow the light C2 of the second wavelength band to travel in a direction directly under the seventhcolor separation element 137 and the light C1+C3 of the other wavelength band to travel in the second diagonal direction. In light of the above, the eighthcolor separation element 138 has the same color separation characteristics as those of the seventhcolor separation element 137 and is rotated by 90° with respect to the seventhcolor separation element 137, or may correspond to the fourthcolor separation element 134 that is oriented in the first diagonal direction. For the image sensor ofFIG. 15 , as indicated by arrows, thefirst pixel 110 a and thethird pixel 110 c may receive the light C1+C3 of the first and third wavelength bands respectively from the first and second diagonal directions. - It should be understood that the exemplary embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each exemplary embodiment should typically be considered as available for other similar features or aspects in other exemplary embodiments.
- While one or more exemplary embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the exemplary embodiments as defined by the following claims.
Claims (20)
1. An image sensor comprising:
a pixel array including Bayer patterns, each of the Bayer patterns including a first pixel and a third pixel provided in a first diagonal direction and two second pixels provided in a second diagonal direction crossing the first diagonal direction; and
a color separation element provided to face the second pixels in the second diagonal direction,
wherein the color separation element is configured to control light of a first wavelength band of incident light to travel in a first lateral direction of the color separation element toward the first pixel, to control light of a third wavelength band of the incident light to travel in a second lateral direction of the color separation element toward the third pixel, and to control light of a second wavelength band of the incident light to travel in a downward direction of the color separation element toward the second pixels.
2. The image sensor of claim 1 , further comprising a color filter layer that is provided on the pixel array, wherein the color filter layer comprises at least one of a first color filter provided adjacent to the first pixel, a second color filter provided adjacent to the second pixel, and a third color filter provided adjacent to the third pixel.
3. The image sensor of claim 2 , further comprising:
a transparent dielectric layer provided on the color filter layer; and
a microlens provided on the transparent dielectric layer.
4. The image sensor of claim 3 , wherein the microlens is provided to face the pixel array including the Bayer patterns.
5. An image sensor comprising:
a pixel array including Bayer patterns, each of the Bayer patterns including a first pixel and a third pixel provided in a first diagonal direction and two second pixels provided in a second diagonal direction crossing the first diagonal direction;
color separation elements provided to face the second pixels, respectively; and
a color filter layer provided on the pixel array,
wherein each of the color separation elements is configured to control light of a second wavelength band of incident light to travel in a downward direction of the color separation element and to control mixed light including a mixture of light of a first wavelength band of the incident light and light of a third wavelength band of the incident light to travel in directions toward left and right sides of the color separation element.
6. The image sensor of claim 5 , wherein one of the color separation elements comprises a first color separation element provided in a first direction and a second color separation element provided in a second direction perpendicular to the first direction.
7. The image sensor of claim 6 , wherein the first color separation element and the second color element are alternately provided to face the second pixels.
8. The image sensor of claim 6 , wherein both of the first color separation element and the second color element are provided adjacent to one of the second pixels.
9. The image sensor of claim 5 , wherein the color separation elements are oriented in the second diagonal direction.
10. The image sensor of claim 5 , wherein one of the color separation elements comprises a first color separation element oriented in the first diagonal direction and a second color separation element oriented in the second diagonal direction.
11. The image sensor of claim 5 , further comprising:
a transparent dielectric layer provided on the color filter layer; and
microlenses provided on the transparent dielectric layer,
wherein the microlenses are separately provided at each of the first, second, and third pixels.
12. The image sensor of claim 11 , wherein the light of the second wavelength band separated by the color separation elements is incident on the second pixels and the mixed light of the first and second wavelength bands and a white light are incident together on the first and third pixels.
13. The image sensor of claim 12 , wherein the color filter layer comprises a first color filter provided on the first pixel and configured to transmit the light of the first wavelength band and a third color filter provided on the third pixel and configured to transmit the light of the third wavelength band.
14. The image sensor of claim 12 , wherein the light of the first wavelength band is red light, the light of the second wavelength band is green light, and the light of the third wavelength band is blue light.
15. An Image sensor comprising:
a pixel array including a first pixel and a third pixel provided in a first diagonal direction and two second pixels provided in a second diagonal direction crossing the first diagonal direction; and
a first color separation element oriented in the second diagonal direction and facing the second pixels.
16. The image sensor of claim 15 , further comprising a second color separation element oriented in the first diagonal direction and facing the second pixels.
17. The image sensor of claim 16 , wherein the first color separation element is configured to control light of a first wavelength band of incident light to travel in a first lateral direction of the first color separation element toward the first pixel, to control light of a third wavelength band of the incident light to travel in a second lateral direction of the first color separation element toward the third pixel, and to control light of a second wavelength band of the incident light to travel in a downward direction of the first color separation element toward the second pixels.
18. The image sensor of claim 16 , wherein the second color separation element is configured to control light of a first wavelength band of incident light to travel in a first lateral direction of the second color separation element toward the first pixel, to control light of a third wavelength band of the incident light to travel in a second lateral direction of the second color separation element toward the third pixel, and to control light of a second wavelength band of the incident light to travel in a downward direction of the second color separation element toward the second pixels.
19. The image sensor of claim 15 , further comprising a color filter layer that is provided on the pixel array, wherein the color filter layer comprises at least one of a first color filter provided adjacent to the first pixel, a second color filter provided adjacent to one of the second pixels, and a third color filter provided adjacent to the third pixel.
20. The image sensor of claim 19 , further comprising a transparent dielectric layer provided on the color filter layer, wherein the first color separation element is buried in the transparent dielectric layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/833,083 US10136109B2 (en) | 2014-07-03 | 2017-12-06 | Image sensor including color separation element and image pickup apparatus including the image sensor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2014-0083233 | 2014-07-03 | ||
KR1020140083233A KR102276434B1 (en) | 2014-07-03 | 2014-07-03 | Image sensor including color separation element and image pickup apparatus including the image sensor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/833,083 Continuation US10136109B2 (en) | 2014-07-03 | 2017-12-06 | Image sensor including color separation element and image pickup apparatus including the image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
US20160006995A1 true US20160006995A1 (en) | 2016-01-07 |
US9860492B2 US9860492B2 (en) | 2018-01-02 |
Family
ID=53793951
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/791,746 Active US9860492B2 (en) | 2014-07-03 | 2015-07-06 | Image sensor including color separation element and image pickup apparatus including the image sensor |
US15/833,083 Active US10136109B2 (en) | 2014-07-03 | 2017-12-06 | Image sensor including color separation element and image pickup apparatus including the image sensor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/833,083 Active US10136109B2 (en) | 2014-07-03 | 2017-12-06 | Image sensor including color separation element and image pickup apparatus including the image sensor |
Country Status (3)
Country | Link |
---|---|
US (2) | US9860492B2 (en) |
EP (1) | EP2963923B1 (en) |
KR (1) | KR102276434B1 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170098672A1 (en) * | 2015-10-06 | 2017-04-06 | Samsung Electronics Co., Ltd. | Image sensor including color separation element |
CN108695351A (en) * | 2017-04-07 | 2018-10-23 | 三星电子株式会社 | Include the imaging sensor of broadband colour filter |
US10177192B2 (en) | 2016-07-04 | 2019-01-08 | SK Hynix Inc. | Image sensor having photodiodes sharing one color filter and one micro-lens |
US10490584B2 (en) | 2015-09-25 | 2019-11-26 | Samsung Electronics Co., Ltd. | Image sensor including color separation element and image pickup apparatus including the image sensor |
US10760953B2 (en) | 2016-12-08 | 2020-09-01 | Samsung Electronics Co., Ltd. | Image sensor having beam splitter |
US10834343B2 (en) | 2016-11-08 | 2020-11-10 | Samsung Electronics Co., Ltd. | Image sensor including color splitting element and method of operating the image sensor |
JPWO2021070305A1 (en) * | 2019-10-09 | 2021-04-15 | ||
CN114697546A (en) * | 2020-12-25 | 2022-07-01 | 汇顶科技(香港)有限公司 | Shooting system |
US11948955B2 (en) | 2019-10-23 | 2024-04-02 | Samsung Electronics Co., Ltd. | Image sensor including color separating lens array and electronic device including the image sensor |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102465995B1 (en) * | 2015-09-30 | 2022-11-25 | 삼성전자주식회사 | Color splitter structure, method of manufacturing the same, image sensor including color splitter structure and optical apparatus including image sensor |
CN113709382B (en) * | 2019-08-26 | 2024-05-31 | Oppo广东移动通信有限公司 | Image sensor, image processing method and storage medium |
CN112701132A (en) | 2019-10-23 | 2021-04-23 | 三星电子株式会社 | Image sensor and electronic device including the same |
US11664400B2 (en) | 2019-10-24 | 2023-05-30 | Samsung Electronics Co., Ltd. | Image sensor and electronic apparatus including the same |
US11682685B2 (en) | 2019-10-24 | 2023-06-20 | Samsung Electronics Co., Ltd. | Color separation element and image sensor including the same |
US11640645B2 (en) | 2019-10-25 | 2023-05-02 | Samsung Electronics Co., Ltd. | Apparatus and method of acquiring image by employing color separation lens array |
KR20210145390A (en) * | 2020-05-25 | 2021-12-02 | 에스케이하이닉스 주식회사 | Image Sensing Device |
CN114447006A (en) | 2020-10-30 | 2022-05-06 | 三星电子株式会社 | Image sensor including color separation lens array and electronic device including image sensor |
KR102692571B1 (en) | 2021-12-07 | 2024-08-06 | 삼성전자주식회사 | Image sensor including color separating lens array and electronic apparatus including the image sensor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030063204A1 (en) * | 2001-08-31 | 2003-04-03 | Canon Kabushiki Kaisha | Image pickup apparatus |
US20030179457A1 (en) * | 2002-02-21 | 2003-09-25 | Hideki Dobashi | Image pickup apparatus |
US20100019129A1 (en) * | 2008-07-28 | 2010-01-28 | Tomoko Ishigaki | Imaging device and imaging apparatus |
US20160064448A1 (en) * | 2014-08-28 | 2016-03-03 | Samsung Electronics Co., Ltd. | Image sensor having improved light utilization efficiency |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7176446B1 (en) * | 1999-09-15 | 2007-02-13 | Zoran Corporation | Method and apparatus for distributing light onto electronic image sensors |
US7405759B2 (en) * | 2001-09-28 | 2008-07-29 | Mosaic Imaging, Inc. | Imaging with spectrally dispersive element for aliasing reducing |
KR100976284B1 (en) | 2007-06-07 | 2010-08-16 | 가부시끼가이샤 도시바 | Image pickup device |
KR20090016368A (en) | 2007-08-10 | 2009-02-13 | 성균관대학교산학협력단 | Color separating apparatus and color display apparatus using it |
US8208052B2 (en) * | 2008-12-19 | 2012-06-26 | Panasonic Corporation | Image capture device |
KR20110115072A (en) * | 2009-01-14 | 2011-10-20 | 파나소닉 주식회사 | Imaging device |
US8063352B2 (en) | 2009-06-24 | 2011-11-22 | Eastman Kodak Company | Color separation filter for solid state sensor |
KR20110111090A (en) | 2010-04-02 | 2011-10-10 | 엘지이노텍 주식회사 | Light emiting diode lens and liquid crystal display including the same |
JP2012015424A (en) * | 2010-07-02 | 2012-01-19 | Panasonic Corp | Solid-state imaging device |
JP5503458B2 (en) | 2010-08-24 | 2014-05-28 | パナソニック株式会社 | Solid-state imaging device and imaging apparatus |
JP5503459B2 (en) * | 2010-08-24 | 2014-05-28 | パナソニック株式会社 | Solid-state imaging device and imaging apparatus |
CN103503143B (en) * | 2012-05-02 | 2016-12-28 | 松下电器(美国)知识产权公司 | Solid-state imager and camera head |
US9099370B2 (en) * | 2012-09-03 | 2015-08-04 | Panasonic Intellectual Property Management Co., Ltd. | Solid-state imaging element and imaging device |
-
2014
- 2014-07-03 KR KR1020140083233A patent/KR102276434B1/en active IP Right Grant
-
2015
- 2015-07-03 EP EP15175303.5A patent/EP2963923B1/en active Active
- 2015-07-06 US US14/791,746 patent/US9860492B2/en active Active
-
2017
- 2017-12-06 US US15/833,083 patent/US10136109B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030063204A1 (en) * | 2001-08-31 | 2003-04-03 | Canon Kabushiki Kaisha | Image pickup apparatus |
US20030179457A1 (en) * | 2002-02-21 | 2003-09-25 | Hideki Dobashi | Image pickup apparatus |
US20100019129A1 (en) * | 2008-07-28 | 2010-01-28 | Tomoko Ishigaki | Imaging device and imaging apparatus |
US20160064448A1 (en) * | 2014-08-28 | 2016-03-03 | Samsung Electronics Co., Ltd. | Image sensor having improved light utilization efficiency |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10490584B2 (en) | 2015-09-25 | 2019-11-26 | Samsung Electronics Co., Ltd. | Image sensor including color separation element and image pickup apparatus including the image sensor |
CN107017269A (en) * | 2015-10-06 | 2017-08-04 | 三星电子株式会社 | Imaging sensor including recombination dichroic elements |
US10229946B2 (en) * | 2015-10-06 | 2019-03-12 | Samsung Electronics Co., Ltd. | Image sensor including color separation element |
US20170098672A1 (en) * | 2015-10-06 | 2017-04-06 | Samsung Electronics Co., Ltd. | Image sensor including color separation element |
US10177192B2 (en) | 2016-07-04 | 2019-01-08 | SK Hynix Inc. | Image sensor having photodiodes sharing one color filter and one micro-lens |
US10834343B2 (en) | 2016-11-08 | 2020-11-10 | Samsung Electronics Co., Ltd. | Image sensor including color splitting element and method of operating the image sensor |
US10760953B2 (en) | 2016-12-08 | 2020-09-01 | Samsung Electronics Co., Ltd. | Image sensor having beam splitter |
US10698141B2 (en) | 2017-04-07 | 2020-06-30 | Samsung Electronics Co., Ltd. | Image sensor including broad band color filter |
CN108695351A (en) * | 2017-04-07 | 2018-10-23 | 三星电子株式会社 | Include the imaging sensor of broadband colour filter |
JPWO2021070305A1 (en) * | 2019-10-09 | 2021-04-15 | ||
US20230096263A1 (en) * | 2019-10-09 | 2023-03-30 | Nippon Telegraph And Telephone Corporation | Spectral Element Array, Image Sensor and Image Apparatus |
EP4044233A4 (en) * | 2019-10-09 | 2023-06-14 | Nippon Telegraph And Telephone Corporation | Spectral element array, imaging element, and imaging device |
US12087783B2 (en) * | 2019-10-09 | 2024-09-10 | Nippon Telegraph And Telephone Corporation | Spectral element array, image sensor and image apparatus |
US11948955B2 (en) | 2019-10-23 | 2024-04-02 | Samsung Electronics Co., Ltd. | Image sensor including color separating lens array and electronic device including the image sensor |
CN114697546A (en) * | 2020-12-25 | 2022-07-01 | 汇顶科技(香港)有限公司 | Shooting system |
Also Published As
Publication number | Publication date |
---|---|
US9860492B2 (en) | 2018-01-02 |
US20180098038A1 (en) | 2018-04-05 |
EP2963923A1 (en) | 2016-01-06 |
US10136109B2 (en) | 2018-11-20 |
EP2963923B1 (en) | 2020-03-04 |
KR20160004641A (en) | 2016-01-13 |
KR102276434B1 (en) | 2021-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10136109B2 (en) | Image sensor including color separation element and image pickup apparatus including the image sensor | |
US10490584B2 (en) | Image sensor including color separation element and image pickup apparatus including the image sensor | |
US10725310B2 (en) | Color separation devices and image sensors including the same | |
US9841604B2 (en) | Color separation device and image sensor including the color separation device | |
US10229946B2 (en) | Image sensor including color separation element | |
US9356065B2 (en) | Image sensor having improved light utilization efficiency | |
US9525006B2 (en) | Stacked type image sensor including color separation element and image pickup apparatus including the stacked type image sensor | |
KR102338897B1 (en) | Stacked image sensor including color separation element and image pickup apparatus including the stacked image sensor | |
US10170510B2 (en) | Color separation element array, image sensor including the same, and electronic device | |
US9591277B2 (en) | Color separation element array, image sensor including the color separation element array, and image pickup apparatus including the color separation element array | |
US10698141B2 (en) | Image sensor including broad band color filter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SAMSUNG ELECTRONICS CO., LTD., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YUN, SEOKHO;NAM, SUNGHYUN;ROH, SOOKYOUNG;AND OTHERS;REEL/FRAME:035981/0804 Effective date: 20150306 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |