US20050247930A1 - Shallow trench isolation void detecting method and structure for the same - Google Patents

Shallow trench isolation void detecting method and structure for the same Download PDF

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Publication number
US20050247930A1
US20050247930A1 US11/179,518 US17951805A US2005247930A1 US 20050247930 A1 US20050247930 A1 US 20050247930A1 US 17951805 A US17951805 A US 17951805A US 2005247930 A1 US2005247930 A1 US 2005247930A1
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Prior art keywords
active areas
gate lines
wafer
void
region
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Abandoned
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US11/179,518
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Ping Hsu
Yi-Nan Chen
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Nanya Technology Corp
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Nanya Technology Corp
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Priority to US11/179,518 priority Critical patent/US20050247930A1/en
Publication of US20050247930A1 publication Critical patent/US20050247930A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/006—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation at wafer scale level, i.e. wafer scale integration [WSI]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Definitions

  • the present invention relates to a semiconductor device process, more specifically, to a method for detecting if there is any void in STI.
  • STI shallow trench isolation
  • dielectric 12 can be oxide such as silicon oxide.
  • a void 13 is likely to be generated in the step of filling with the dielectric 12 , as shown in FIG. 1 .
  • FIG. 2 is a schematic top view of a gate region structure of a DRAM
  • reference number 20 indicates an active area
  • 21 indicates a gate line
  • 24 indicates a deep trench.
  • the adjacent portion between the active areas is short.
  • Reference number 23 indicates a void formed in the dielectric filled in the STI between the active areas 20 .
  • the existence of the void 23 may influence the electric performance of the semiconductor structure. However, such a void is very small and is hardly found during the process. Usually, the existence of the void only can be found in the electric testing, which is performed after the wafer is finished, cut into chips and packed. Accordingly, a waste of process is generated.
  • An objective of the present invention is to provide a STI void detecting method for semiconductor wafers.
  • the method of the present invention can find in time whether there is any void formed in STI, so that the defective products can be found in the early stage, thereby reducing the waste of the cost and working hours.
  • Another objective of the present invention is to provide a STI void detecting region structure for semiconductor wafers. By forming and testing the testing region structure of the present invention, whether there is any void formed in STI can be found in time.
  • a shallow trench isolation void detecting method for a semiconductor wafer comprises steps of assigning a testing region in a predetermined region of the semiconductor wafer; forming active areas and gate lines inter with the active areas in said detecting region by a synchronous process for other regions, filling a trench between the active areas with dielectric, the adjacent portion between the active areas having at least a predetermined length; and detecting the electric values of the gate lines to determine whether there is a void formed in the dielectric filled in the trench between the active areas.
  • a testing region structure for semiconductor wafer STI void detecting is formed on the wafer by a process synchronizing for other portions of the wafer.
  • the testing region structure comprises a plurality of active areas, trenches between the active areas being filled with dielectric, and the portions of the active areas adjacent to each other having at least a predetermined length; and a plurality of gate lines inter with the active areas.
  • FIG. 1 shows a schematic sectional diagram illustrating a void formed in a STI of a semiconductor device
  • FIG. 2 is a schematic top view showing the arrangement of the active areas and gate lines of a semiconductor device in prior art.
  • FIG. 3 is a schematic top view showing the arrangement of the active areas and gate lines of a semiconductor device in accordance with an embodiment of the present invention.
  • testing regions comprising active areas and gate lines are produced by the synchronous process for other portions of the wafer.
  • the sections of active areas 30 in the testing region are formed as long strips. Accordingly, the active areas 30 are adjacent to each other. Shallow trenches formed between the active areas 30 are filled with dielectric 32 by the process synchronous with other portions of the wafer. As shown, in the present embodiment, the active areas 30 are preferably formed as parallel strips. Since the length of the portions of two active areas 30 adjacent to each other is very long, if there is a void 33 formed in the dielectric 32 , the void 33 will be a long void.
  • Gate lines 31 ′ in the testing region are arranged at an interval the same as the gate lines in other non-testing regions. As shown, since the section of the void 33 is long, the void 33 crosses at least two gate lines 31 ′. Accordingly, for example, it is easy to detect whether there is a void existing by measuring the potentials of the gate lines 31 ′ in the testing region.
  • the gate 31 can be formed as a comb-shaped gate. That is, the odd gate lines connected together, while the even gate lines connected together, thereby forming a dual-comb structure. Then the potential of a plurality of gate lines can be measured at a time.
  • the testing region is produced synchronously with other regions of the wafer. Accordingly, if a void is detected in the testing region, it can be determined that there are voids formed in other portions of the wafer. Then the detective products can be found and eliminated at an early stage, but not the stage after the wafer is cut into chips and packed. Thus, unnecessary working process is avoided, and therefore the working hours and cost are reduced.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

Disclosed is a. method for detecting STI void of a semiconductor wafer. The method of the present invention comprises steps of assigning a detecting area in a predetermined region of the wafer; forming active areas and gate strips crossing the active areas by the process synchronized with that for other regions of the wafer. Dielectric material is filled between the active areas. The adjacent portion between the active areas reaches a predetermined length at least. The electrical value of the gate strips is measured to determine whether there is any void in the dielectric filled between the active areas, thereby to derive whether there is any void generated in the STI between the active areas of the other regions of the wafer.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a semiconductor device process, more specifically, to a method for detecting if there is any void in STI.
  • 2. Description of the Prior Art
  • In the process for semiconductor devices getting more and more compact, shallow trench isolation (STI) is used to separate active areas 10 for forming respective elements. STI is formed between active areas 10 and is filled with dielectric 12, which can be oxide such as silicon oxide. However, a void 13 is likely to be generated in the step of filling with the dielectric 12, as shown in FIG. 1.
  • In DRAM process, such a condition also happens. With reference to FIG. 2, which is a schematic top view of a gate region structure of a DRAM, reference number 20 indicates an active area, 21 indicates a gate line, 24 indicates a deep trench. As shown in the drawing, the adjacent portion between the active areas is short. Reference number 23 indicates a void formed in the dielectric filled in the STI between the active areas 20. The existence of the void 23 may influence the electric performance of the semiconductor structure. However, such a void is very small and is hardly found during the process. Usually, the existence of the void only can be found in the electric testing, which is performed after the wafer is finished, cut into chips and packed. Accordingly, a waste of process is generated.
  • Therefore, there is a need for a solution to overcome the problems stated above. The present invention satisfies such a need.
    • SUMMARY OF THE INVENTION
  • An objective of the present invention is to provide a STI void detecting method for semiconductor wafers. The method of the present invention can find in time whether there is any void formed in STI, so that the defective products can be found in the early stage, thereby reducing the waste of the cost and working hours.
  • Another objective of the present invention is to provide a STI void detecting region structure for semiconductor wafers. By forming and testing the testing region structure of the present invention, whether there is any void formed in STI can be found in time.
  • According to an aspect of the present invention, a shallow trench isolation void detecting method for a semiconductor wafer comprises steps of assigning a testing region in a predetermined region of the semiconductor wafer; forming active areas and gate lines inter with the active areas in said detecting region by a synchronous process for other regions, filling a trench between the active areas with dielectric, the adjacent portion between the active areas having at least a predetermined length; and detecting the electric values of the gate lines to determine whether there is a void formed in the dielectric filled in the trench between the active areas.
  • According to another aspect of the present invention, a testing region structure for semiconductor wafer STI void detecting is formed on the wafer by a process synchronizing for other portions of the wafer. The testing region structure comprises a plurality of active areas, trenches between the active areas being filled with dielectric, and the portions of the active areas adjacent to each other having at least a predetermined length; and a plurality of gate lines inter with the active areas.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The following drawings are only for illustrating the mutual relationships between the respective portions and are not drawn according to practical dimensions and ratios. In addition, the like reference numbers indicate the similar elements.
  • FIG. 1 shows a schematic sectional diagram illustrating a void formed in a STI of a semiconductor device;
  • FIG. 2 is a schematic top view showing the arrangement of the active areas and gate lines of a semiconductor device in prior art; and
  • FIG. 3 is a schematic top view showing the arrangement of the active areas and gate lines of a semiconductor device in accordance with an embodiment of the present invention.
    • DETIALED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • An embodiment of the present invention will be described in detail with reference to the accompanying drawings.
  • According to an embodiment of the present invention, at predetermined locations on the wafer, preferably the cut lines portion, testing regions comprising active areas and gate lines are produced by the synchronous process for other portions of the wafer.
  • As shown in FIG. 3, the sections of active areas 30 in the testing region are formed as long strips. Accordingly, the active areas 30 are adjacent to each other. Shallow trenches formed between the active areas 30 are filled with dielectric 32 by the process synchronous with other portions of the wafer. As shown, in the present embodiment, the active areas 30 are preferably formed as parallel strips. Since the length of the portions of two active areas 30 adjacent to each other is very long, if there is a void 33 formed in the dielectric 32, the void 33 will be a long void. Gate lines 31′ in the testing region are arranged at an interval the same as the gate lines in other non-testing regions. As shown, since the section of the void 33 is long, the void 33 crosses at least two gate lines 31′. Accordingly, for example, it is easy to detect whether there is a void existing by measuring the potentials of the gate lines 31′ in the testing region.
  • According to the present embodiment, for the sake of convenience of measuring, the gate 31 can be formed as a comb-shaped gate. That is, the odd gate lines connected together, while the even gate lines connected together, thereby forming a dual-comb structure. Then the potential of a plurality of gate lines can be measured at a time.
  • The testing region is produced synchronously with other regions of the wafer. Accordingly, if a void is detected in the testing region, it can be determined that there are voids formed in other portions of the wafer. Then the detective products can be found and eliminated at an early stage, but not the stage after the wafer is cut into chips and packed. Thus, unnecessary working process is avoided, and therefore the working hours and cost are reduced.
  • While the embodiment of the present invention is illustrated and described, various modifications and alterations can be made by persons skilled in this art. The embodiment of the present invention is therefore described in an illustrative but not restrictive sense. It is intended that the present invention may not be limited to the particular forms as illustrated, and that all modifications and alterations which maintain the spirit and realm of the present invention are within the scope as defined in the appended claims.

Claims (9)

1. A method for detecting STI void of semiconductor wafer, comprising steps of
assigning a test region in a predetermined region of the wafer;
forming active areas, trenches between the active areas and gate lines intersecting with tthe active areas, said trenches being filled with dielectric, and said active areas having their adjacent portion reaching at least a predetermined length; and
measuring the electric values of said gate lines to determine whether there is a void formed in the trench.
2. The method as claimed in claim 1, wherein said active areas in the testing region are formed as parallel strips.
3. The method as claimed in claim 1, wherein odd ones of said gate lines are connected together, while even ones of the gate lines are connected together, so as to form a dual-comb structure.
4. The method as claimed in claim 3, wherein said measuring step is to measure the potentials of the comb structure of the odd gate lines and the comb structure of the even gate lines.
5. The method as claimed in claim 1, wherein the testing region is formed on a predetermined cutting line of the wafer.
6. A testing region structure for STI void detection of semiconductor wafer, said test region structure being formed on the wafer by a process synchronous with other portions of the wafer, said structure comprising:
a plurality of active areas, the adjacent portion between two active areas reaching at least a predetermined length;
a plurality of trenches formed between the active areas and being filled with dielectric; and
a plurality of gate lines intersecting with said active areas.
7. The structure as claimed in claim 6, wherein said active areas in the testing region are formed as parallel strips.
8. The structure as claimed in claim 6, wherein the odd ones of the gate lines are connected together, while the even ones of the gate lines are connected together, so as to constitute a dual-comb structure.
9. The structure as claimed in claim 6, wherein the testing region structure is formed on a predetermined cutting line of the wafer.
US11/179,518 2003-11-18 2005-07-13 Shallow trench isolation void detecting method and structure for the same Abandoned US20050247930A1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102194796A (en) * 2010-03-18 2011-09-21 北大方正集团有限公司 Wafer detection structure, manufacturing method thereof and wafer detection method
CN102790038A (en) * 2011-05-19 2012-11-21 南亚科技股份有限公司 Test key structure for monitoring gate conductor to deep trench misalignment and testing method thereof
CN104425455A (en) * 2013-09-09 2015-03-18 中芯国际集成电路制造(上海)有限公司 Test structure and test method for side ditch problem of shallow trench isolation structure
CN110473799A (en) * 2019-09-09 2019-11-19 上海华力微电子有限公司 The detection method of hole defect in isolation structure of shallow trench
CN113990845A (en) * 2021-12-28 2022-01-28 广州粤芯半导体技术有限公司 Detection structure, preparation method thereof and detection method of cavity in membrane layer

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US20060284173A1 (en) * 2005-06-17 2006-12-21 Texas Instruments Incorporated Method to test shallow trench isolation fill capability
KR101406227B1 (en) * 2008-05-15 2014-06-13 삼성전자주식회사 TEG pattern for detecting void in the device isolation layer and method of forming the same
CN101853843B (en) * 2010-03-12 2015-03-18 上海华虹宏力半导体制造有限公司 Structure for testing integrality of gate oxide of semiconductor part
US9786571B1 (en) * 2017-02-17 2017-10-10 United Microelectronics Corp. Test key
US10312140B1 (en) 2017-12-19 2019-06-04 International Business Machines Corporation Dielectric gap fill evaluation for integrated circuits
CN112951806B (en) * 2021-02-23 2023-12-01 长江存储科技有限责任公司 Semiconductor structure and method for determining step height of semiconductor structure
CN113410152B (en) * 2021-06-02 2022-05-17 长江存储科技有限责任公司 Hole detection method of 3D NAND memory

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Publication number Priority date Publication date Assignee Title
CN102194796A (en) * 2010-03-18 2011-09-21 北大方正集团有限公司 Wafer detection structure, manufacturing method thereof and wafer detection method
CN102790038A (en) * 2011-05-19 2012-11-21 南亚科技股份有限公司 Test key structure for monitoring gate conductor to deep trench misalignment and testing method thereof
US20120293196A1 (en) * 2011-05-19 2012-11-22 Nanya Technology Corporation Test key structure for monitoring gate conductor to deep trench misalignment and testing method thereof
CN104425455A (en) * 2013-09-09 2015-03-18 中芯国际集成电路制造(上海)有限公司 Test structure and test method for side ditch problem of shallow trench isolation structure
CN110473799A (en) * 2019-09-09 2019-11-19 上海华力微电子有限公司 The detection method of hole defect in isolation structure of shallow trench
CN113990845A (en) * 2021-12-28 2022-01-28 广州粤芯半导体技术有限公司 Detection structure, preparation method thereof and detection method of cavity in membrane layer

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