TWM327545U - Improved light-emitting diode packaging structure - Google Patents
Improved light-emitting diode packaging structure Download PDFInfo
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- TWM327545U TWM327545U TW096211149U TW96211149U TWM327545U TW M327545 U TWM327545 U TW M327545U TW 096211149 U TW096211149 U TW 096211149U TW 96211149 U TW96211149 U TW 96211149U TW M327545 U TWM327545 U TW M327545U
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- emitting diode
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- 238000004806 packaging method and process Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims description 27
- 230000017525 heat dissipation Effects 0.000 claims description 20
- 235000012431 wafers Nutrition 0.000 claims description 15
- 239000007769 metal material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000005611 electricity Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- WSNMPAVSZJSIMT-UHFFFAOYSA-N COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 Chemical compound COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 WSNMPAVSZJSIMT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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Abstract
Description
M327545 八、新型說明： 【新型所屬之技術領域】 本新型是有關於一種發光二極體封裝改良結構，且特 別是有關於一種於封装基板上穿設有複數個散熱孔 (thermal via)之發光二極體封裝結構。 【先前技術】 隨著發光二極體（Light-Emitting Diode，LED)技術的進 步，LED可展現的冗度專級也越來越高，因其具有壽命長、 省電、安全及反應快等特點，應用領域相當廣泛。而一般 高功率Flash LED之封裝基g，主要是採用陶瓷材料 (Ceramic substrate)做為基板，但陶瓷基板的製作技術門檻 高，且費用昂貴、脆弱易碎，將限制LED的封裝設計方式， 增加生產成本。由於矽晶圓的材料便宜、製作技術已臻成 沾’且在晶圓上設計結構容易，石夕的熱傳導係數也與陶瓷 材料相近，但矽基板的製作成本卻比陶瓷基板低廉許多， 因此利用矽晶圓製作基板可節省許多的成本，也不會有熱 傳導力減少的不良影響。 在習知的表面黏著型發光二極體結構中，發光二極體 晶片設置區域係由封裝基座定義出，僅留下一出光開口以 供晶片之光線射出。當晶片發光時，會有部份非直接射出 光線入射基座侧壁因而被吸收、或產生反射及散射之現 象，而只有極少部份之非直接射出光線最後會從出光開口 放射出，大部份係於多次反射、散射過程中被封裝材料吸 收而/肖耗掉。因此發光一極體裝置貫際上的輸出效率將因 5 M327545 光月b里被吸收而降低，造成可觀的能量浪費。而散熱性不 佳亦為常見的問題，一般所使用之封裝基座材料為一不透 光且耐熱之材料，發光二極體在操作時常會伴隨熱量之累 積，尤其是高功率的發光二極體，溫度升高對發光二極體 的發光效率及品質亦有不良影響。 【新型内容】 因此本新型之一目的就是在提供一種發光二極體封裝 改良結構，用以減低能量損耗並提高發光二極體之光輸出 效率。 本新型的另一目的是在提供一種發光二極體封裝改良 、、σ構以具‘熱性之半導體材料（如石夕、珅化鎵等）作為封裝 基板材料，提高發光二極體封裝結構於操作時之散熱性。 姓本新型的又一目的是在提供一種發光二極體封裝改良 、、。構於封I基板上之晶片凹槽内之導電支架上穿設複數 個散熱孔（thennalvia)用以導通電路，錄供發光元件所產 生的熱導出。 社本新型的再一目的是在提供一種發光二極體封裝改良 、-構’將封裝結構增設反光蓋，因此可依產品設計獲得 欲射出光線之角度。 根據本新型之上述目的，提出一種發光二極體封裝改 良^構’包括了具有晶μ置凹槽之封裝基板 =熱性之半導體材料，凹槽内可放置至少一個發光二： —曰曰片。導電支架，係用以導引電流進入發光二極體封裝 體m卩份《於封裝基板之晶片放置凹槽區域内： M327545 以及，相連於導電支架及發光二極體晶片之導電線路。透 過於封裝基板之晶片設置凹槽區域内穿設複數個散熱孔， 並於該散熱孔中充填導電性之金屬材料，提供除了導通導 電支架正面及背面之電路’同時藉由金屬材料良好的導熱 性，更提供將半導體發光元件於操作時所產生的熱引導出 封裝結構，藉以提高封裝結構之散熱性，而晶片設置凹槽 側壁包含佈設反光性金屬層，或可再於封装基板之凹槽; 增設與該凹槽侧壁夾一特定角度之反光蓋結構，藉以使入 射在凹槽側壁之光線可透過反射、折射而向外射出，更增 加發光二極體之輸出效能。 依照本新型之一較佳實施例，係透過封裝基板上之晶 片設置凹槽區域内之導電支架上穿設複數個散熱孔 (thermal Via)用以導通電路，並提供將半導體發光元件於操 作時所產生的熱導出。藉此，本新型所提出之封裝結構改 良具有降低能量損耗提高光輸出效率之功效。且適用於發 光一極體、咼功率發光二極體、雷射二極體之封裝結構， 可使發光二極體在操作時達到降低能量損耗提高光輸出效 率之功效。 綜上所述，本新型之發光二極體封裝改良結構提供一 種減少光能量損耗、具有高光輸出效率之設計，更具有幫 助散熱及容易控制出光角度之功能。其製造方法不須特殊 額外的設備，僅於封裝基板上穿設複數個散熱孔（thermal via)，且依散熱性需求，僅需透過多增設複數個散熱孔，藉 以提高封裝結構之散熱效能，無須負擔額外材料上的成本。 7 M327545 【實施方式】 本創作所揭露之發光二極體封裝改良結構，以下將以 圖式及詳細說明清楚說明本創作之精神，如熟悉此技術之 人員在瞭解本創作之較佳實施例後，#可由本創作所示之 技術，加以改變及修飾，其並不脫離本創作之精神與範圍。 睛配合參照第1、2圖，其分別為依照本新型一較佳實 施例之-歸光二極體封裝&良結構之俯視示意圖及側面 透視圖。本創作所提出之發光二極體封裝結構1〇〇，包括： 封裝基板110,其上具有凹槽lu以供放置至少一個發光二 極體晶片120。導電支架130,其一部份曝露於凹槽lu區 域内，係透過導電線路150電性連接至該發光二極體晶片 120,而導電支架130之表面材質可為金、銀、銅材料之金 屬層。 其中，封裝基板110之材料可包含具導熱性之半導體 材料，如含矽基板、砷化鎵基板等。而封裝基板11()上之 凹槽111的側壁可佈設反光性金屬層。或可於封裝基板11〇 之凹槽111内，增設反光蓋結構140，其反光表面係與凹槽 111之側壁夾一特定角度，藉以使入射在凹槽i丨i側壁的光 線可透過反射、折射而向外射出，更增加發光二極體之光 輸出效能。 此外’於晶片設置凹槽1 1 1區域内之導電支架i 3〇上 穿設有複數個散熱孔160,並於該散熱孔160中充填導電性 之金屬材料’提供除了導通該導電支架丨3()正面及背面之 電路外，同0守藉由金屬材料良好的導熱性，提供將發光二 極體晶片120於操作時所產生的熱導引出發光二極體封裝 M327545 1100。且依散熱性的需求設計，在不影響發光二極體整 體結構之下，僅需透過增設憾孔㈣的數量，藉以提高 發光二極體封封裝結構100之散熱效能。 因此’可藉由導熱性佳之半導體材料封裝基板、導電 支架上可依散熱需求設置之複數個散熱孔，及散熱孔内充 填之金屬材料之導熱，增加紐封裝結構之散熱效益。 、，本創作所提出之發光二極體封裝改良結構，適用於如 I光-極體、兩功率發光二極體、雷射二極體之封裝結構， 可使發光二極體在操作時達到降低能量損耗提高光輸出效 率之功效。 雖然本新型已以一較佳實施例揭露如上，然其並非用 以限疋本新型，任何熟習此技藝者，在不脫離本新型之精 範圍内，當可作各種之更動與潤飾，因此本新型之保 濩範圍當視後附之申請專利範圍所界定者為準。 M327545 【圖式簡單說明】 為讓本新型之上述和其他目的、特徵、優點與貝施例 能更明顯易懂，所附圖式之詳細說明如下·· 第1圖，係繪示依照本新型一較佳實施例之一種發光 二極體封裝改良結構之俯視示意圖。 第2圖，係繪示依照本新型—較佳實施例之-種發光 一極體封裝改良結構之側面透視圖。 【主要元件符號說明】 wo :發光二極體封裝結構 II 〇 :封裝基板 III :凹槽 120 :發光二極體晶片 130 :導電支架 140 :反光蓋結構 k 150 :導電線路 160 散熱孔M327545 VIII. New description: [New technical field] The present invention relates to an improved structure of a light-emitting diode package, and in particular to a light-emitting device in which a plurality of thermal vias are formed on a package substrate. Diode package structure. [Prior Art] With the advancement of Light-Emitting Diode (LED) technology, LEDs can exhibit more and more redundancy levels due to their long life, power saving, safety and fast response. Features, a wide range of applications. The package base g of the general high-power flash LED is mainly made of ceramic substrate (Ceramic substrate), but the manufacturing technology of the ceramic substrate is high, expensive, fragile and fragile, and will limit the packaging design of the LED, and increase Cost of production. Because the material of the germanium wafer is cheap, the fabrication technology has been formed, and the design structure on the wafer is easy, the heat transfer coefficient of the stone is similar to that of the ceramic material, but the fabrication cost of the germanium substrate is much lower than that of the ceramic substrate, so the utilization is utilized.矽 Wafer fabrication of substrates can save a lot of cost, and there is no adverse effect of reduced thermal conductivity. In a conventional surface-adhesive LED structure, the LED array area is defined by the package pedestal, leaving only a light exit for the light of the wafer to exit. When the wafer emits light, some of the indirect light is incident on the side wall of the pedestal and is absorbed or reflected and scattered. Only a small part of the indirect light is emitted from the light exit opening, most of which are emitted. The parts are absorbed by the encapsulating material during multiple reflection and scattering processes and are consumed by the shaving. Therefore, the output efficiency of the light-emitting diode device will be reduced due to the absorption of 5 M327545 light b, resulting in considerable energy waste. The poor heat dissipation is also a common problem. Generally, the package base material used is an opaque and heat-resistant material, and the light-emitting diode often accumulates heat during operation, especially a high-power light-emitting diode. The increase in temperature also adversely affects the luminous efficiency and quality of the light-emitting diode. [New content] Therefore, one of the aims of the present invention is to provide an improved structure for a light-emitting diode package for reducing energy loss and improving light output efficiency of a light-emitting diode. Another object of the present invention is to provide a light-emitting diode package improved, and a sigma structure having a 'thermal semiconductor material (such as Shi Xi, gallium arsenide, etc.) as a package substrate material, and improving the light-emitting diode package structure. Heat dissipation during operation. A further object of the novel is to provide an improved LED package. A plurality of heat dissipation holes (thennal vias) are formed in the conductive holders in the recesses of the wafers on the I substrate for conducting the circuit, and the heat generated by the light-emitting elements is taken out. A further object of the novel is to provide a light-emitting diode package improvement, and to add a reflective cover to the package structure, so that the angle of the light to be emitted can be obtained according to the product design. According to the above object of the present invention, it is proposed that a light-emitting diode package is modified to include a package substrate having a recessed groove = a thermal semiconductor material, and at least one light-emitting diode can be placed in the recess: a germanium sheet. The conductive support is used to guide current into the LED package. The wafer is placed in the recessed area of the package substrate: M327545 and the conductive lines connected to the conductive support and the LED substrate. A plurality of heat dissipation holes are bored in the recessed area of the chip disposed on the package substrate, and the conductive metal material is filled in the heat dissipation hole to provide a circuit for conducting the front and back surfaces of the conductive support while conducting good heat conduction through the metal material. Further, the heat generated by the semiconductor light emitting device during operation is guided out of the package structure, thereby improving the heat dissipation of the package structure, and the sidewall of the wafer is provided with a reflective metal layer or a groove of the package substrate. A reflective cover structure is formed at a specific angle to the sidewall of the groove, so that the light incident on the sidewall of the groove can be emitted outward through reflection and refraction, thereby increasing the output performance of the LED. According to a preferred embodiment of the present invention, a plurality of thermal vias are disposed through the conductive support in the recessed region of the wafer on the package substrate for conducting the circuit, and the semiconductor light emitting device is operated. The heat generated is derived. Thereby, the improved package structure proposed by the present invention has the effects of reducing energy loss and improving light output efficiency. The utility model is suitable for the package structure of the light-emitting diode, the power-emitting diode and the laser diode, so that the light-emitting diode can reduce the energy loss and improve the light output efficiency during operation. In summary, the improved LED package improvement structure provides a design that reduces optical energy loss and has high light output efficiency, and has the functions of helping to dissipate heat and easily control the light angle. The manufacturing method does not require special additional equipment, and only a plurality of thermal vias are disposed on the package substrate, and according to the heat dissipation requirement, only a plurality of heat dissipation holes need to be added to improve the heat dissipation performance of the package structure. No need to bear the cost of additional materials. 7 M327545 [Embodiment] The improved structure of the LED package disclosed in the present application will be clearly described in the following drawings and detailed description, as those skilled in the art understand the preferred embodiment of the present invention. , # can be changed and modified by the techniques shown in this creation, without departing from the spirit and scope of this creation. The eye fittings are referred to in Figs. 1 and 2, which are respectively a top plan view and a side perspective view of a return light diode package & good structure in accordance with a preferred embodiment of the present invention. The LED package structure of the present invention comprises: a package substrate 110 having a recess lu thereon for placing at least one light emitting diode wafer 120. The conductive support 130 is partially exposed to the recessed area and electrically connected to the light emitting diode 120 through the conductive line 150. The surface of the conductive support 130 may be metal of gold, silver or copper. Floor. The material of the package substrate 110 may include a semiconductor material having thermal conductivity, such as a germanium-containing substrate, a gallium arsenide substrate, or the like. On the other hand, the side wall of the recess 111 on the package substrate 11 can be provided with a reflective metal layer. Alternatively, a reflective cover structure 140 may be added to the recess 111 of the package substrate 11 such that the reflective surface is at a specific angle to the sidewall of the recess 111, so that light incident on the sidewall of the recess i丨i is permeable to reflection. It is refracted and emitted outward, which increases the light output performance of the light-emitting diode. In addition, a plurality of heat dissipation holes 160 are formed in the conductive support i 3 区域 in the region of the wafer setting groove 1 1 1 , and the conductive metal material is filled in the heat dissipation hole 160 to provide a conductive support 丨 3 () Outside the circuit on the front and the back, the same thermal conductivity of the metal material is provided, and the heat generated by the operation of the light-emitting diode wafer 120 is guided out of the light-emitting diode package M327545 1100. According to the heat dissipation requirement, the heat dissipation performance of the light emitting diode package structure 100 can be improved only by increasing the number of the holes (4) without affecting the overall structure of the light emitting diode. Therefore, the heat dissipation effect of the new package structure can be increased by the semiconductor material packaging substrate with good thermal conductivity, the plurality of heat dissipation holes disposed on the conductive support according to the heat dissipation requirement, and the heat conduction of the metal material filled in the heat dissipation holes. The improved structure of the LED package proposed by the present invention is applicable to a package structure such as an I-pole, a two-power LED, and a laser diode, so that the LED can be realized during operation. Reduce energy loss and improve light output efficiency. Although the present invention has been disclosed in a preferred embodiment as above, it is not intended to limit the present invention, and any person skilled in the art can make various changes and retouchings without departing from the scope of the present invention. The scope of the new type of protection is subject to the definition of the scope of the patent application. M327545 [Simple description of the drawings] In order to make the above and other objects, features, advantages and advantages of the present invention more obvious and easy to understand, the detailed description of the drawings is as follows: Fig. 1 is a diagram showing A top view of a modified structure of a light emitting diode package according to a preferred embodiment. Fig. 2 is a side perspective view showing an improved structure of a light-emitting diode package in accordance with the present invention. [Main component symbol description] wo : Light-emitting diode package structure II 〇 : Package substrate III : Groove 120 : Light-emitting diode wafer 130 : Conductive bracket 140 : Reflective cover structure k 150 : Conductive line 160 Cooling hole
Claims (1)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW096211149U TWM327545U (en) | 2007-07-09 | 2007-07-09 | Improved light-emitting diode packaging structure |
| US12/114,459 US20090014739A1 (en) | 2007-07-09 | 2008-05-02 | light-emitting diode package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW096211149U TWM327545U (en) | 2007-07-09 | 2007-07-09 | Improved light-emitting diode packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM327545U true TWM327545U (en) | 2008-02-21 |
Family
ID=40252340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096211149U TWM327545U (en) | 2007-07-09 | 2007-07-09 | Improved light-emitting diode packaging structure |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20090014739A1 (en) |
| TW (1) | TWM327545U (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120199857A1 (en) * | 2009-10-07 | 2012-08-09 | Digitaloptics Corporation East | Wafer-Scale Emitter Package Including Thermal Vias |
| US8339471B2 (en) | 2009-12-31 | 2012-12-25 | DigitalOptics Corporation Europe Limited | Auto white balance algorithm using RGB product measure |
| USD761213S1 (en) * | 2015-04-02 | 2016-07-12 | Genesis Photonics Inc. | Light emitting diode module |
| USD761214S1 (en) * | 2015-04-02 | 2016-07-12 | Genesis Photonics Inc. | Light emitting diode package |
| USD762183S1 (en) * | 2015-04-24 | 2016-07-26 | Lg Electronics Inc. | LED package body |
| TWD188042S (en) | 2016-09-29 | 2018-01-21 | 新世紀光電股份有限公司 | Portion of light emitting diode package |
| TWD186014S (en) | 2016-09-29 | 2017-10-11 | 新世紀光電股份有限公司 | Portion of light emitting diode module |
| CN113376770A (en) * | 2021-06-16 | 2021-09-10 | 成都光创联科技有限公司 | Simplified multiport optical device and packaging method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100439402B1 (en) * | 2001-12-24 | 2004-07-09 | 삼성전기주식회사 | Light emission diode package |
| US7518158B2 (en) * | 2003-12-09 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices and submounts |
-
2007
- 2007-07-09 TW TW096211149U patent/TWM327545U/en unknown
-
2008
- 2008-05-02 US US12/114,459 patent/US20090014739A1/en not_active Abandoned
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| Publication number | Publication date |
|---|---|
| US20090014739A1 (en) | 2009-01-15 |
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