TWI711133B - Electronic structure and manufacturing method thereof - Google Patents
Electronic structure and manufacturing method thereof Download PDFInfo
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- TWI711133B TWI711133B TW108126499A TW108126499A TWI711133B TW I711133 B TWI711133 B TW I711133B TW 108126499 A TW108126499 A TW 108126499A TW 108126499 A TW108126499 A TW 108126499A TW I711133 B TWI711133 B TW I711133B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1405—Shape
- H01L2224/14051—Bump connectors having different shapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
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Abstract
Description
本發明是有關於一種電子結構及其製造方法,且特別是有關於一種應用於晶片封裝領域的電子結構及其製造方法。 The present invention relates to an electronic structure and a manufacturing method thereof, and particularly relates to an electronic structure and a manufacturing method thereof applied in the field of chip packaging.
半導體封裝技術領域中,晶片載體(chip carrier)是一種用以將積體電路晶片(IC chip)連接至下一層級的電子元件,例如主機板或模組板等。具有高佈線密度的線路基板(circuit board)經常作為高接點數的晶片載體。線路基板主要由多個圖案化導體層(patterned conductive layer)及多個介電層(dielectric layer)交替疊合而成,而兩圖案化導體層之間可透過導體孔(conductive via)來彼此電性連接。在目前的晶片封裝中,晶片封裝的頂部會視需求配置有散熱模組,例如是散熱結構或散熱器。具體而言,散熱模組可藉由固定於電路板上而配置在晶片封裝的頂部並對晶片進行散熱。在上述配置散熱模組的過程中,將對晶片封裝產生一定的機械應力。 In the field of semiconductor packaging technology, a chip carrier is a type of electronic component used to connect an integrated circuit chip (IC chip) to the next level, such as a motherboard or a module board. Circuit boards with high wiring density are often used as chip carriers with high contact counts. The circuit substrate is mainly composed of a plurality of patterned conductive layers (patterned conductive layers) and a plurality of dielectric layers (dielectric layers) alternately laminated, and the two patterned conductive layers can be electrically connected to each other through conductive vias. Sexual connection. In the current chip package, a heat dissipation module, such as a heat dissipation structure or a heat sink, is arranged on the top of the chip package as required. Specifically, the heat dissipation module can be arranged on the top of the chip package by being fixed on the circuit board to dissipate the chip. In the above process of disposing the heat dissipation module, a certain mechanical stress will be generated on the chip package.
然而,隨著裝置的功率需求逐漸增加,對於散熱模組的 尺寸上需求也將會增加,進而使散熱模組配置於電路板上所產生機械應力也較大。這將導致了晶片封裝的平整度降低,且增加了焊球變形的風險。 However, as the power demand of the device gradually increases, the The size requirement will also increase, and the mechanical stress generated by the dissipating module on the circuit board will also be greater. This will result in a reduction in the flatness of the chip package and increase the risk of solder ball deformation.
本發明提供一種電子結構及其製造方法,可維持良好的平整度,且同時防止導電結構受重力擠壓而變形,進而維持良好的電性效果。 The present invention provides an electronic structure and a manufacturing method thereof, which can maintain good flatness, and at the same time prevent the conductive structure from being squeezed and deformed by gravity, thereby maintaining good electrical effects.
本發明提供一種電子結構,包括一基板、一電路板、多個導電結構以及多個支撐結構。基板具有相對的一第一面及一第二面,並具有位於第一面的多個第一連接墊。電路板配置於基板,具有相對的一第三面及一第四面,並具有位於第三面的多個第二連接墊。導電結構分別連接於第一連接墊以及第二連接墊。支撐結構分別連接於第一連接墊或第二連接墊的至少其中之一,其中支撐結構與導電結構彼此電絕緣,且支撐結構的結構強度大於導電結構的結構強度。 The invention provides an electronic structure, which includes a substrate, a circuit board, a plurality of conductive structures and a plurality of supporting structures. The substrate has a first surface and a second surface opposite to each other, and has a plurality of first connection pads on the first surface. The circuit board is disposed on the substrate, has a third surface and a fourth surface opposite to each other, and has a plurality of second connection pads on the third surface. The conductive structure is respectively connected to the first connection pad and the second connection pad. The support structure is respectively connected to at least one of the first connection pad or the second connection pad, wherein the support structure and the conductive structure are electrically insulated from each other, and the structural strength of the support structure is greater than that of the conductive structure.
本發明另提供一種電子結構製造方法,包括:提供一基板、多個導電結構及多個支撐結構的組合,其中基板具有多個第一連接墊;以及連接導電結構至一電路板,其中支撐結構與導電結構分別連接至基板的第一連接墊。支撐結構與導電結構彼此電絕緣,且支撐結構的結構強度大於導電結構的結構強度。 The present invention also provides a method for manufacturing an electronic structure, including: providing a combination of a substrate, a plurality of conductive structures, and a plurality of supporting structures, wherein the substrate has a plurality of first connection pads; and connecting the conductive structure to a circuit board, wherein the supporting structure The conductive structure is respectively connected to the first connection pad of the substrate. The support structure and the conductive structure are electrically insulated from each other, and the structural strength of the support structure is greater than that of the conductive structure.
本發明另提供一種電子結構製造方法,包括:提供一基 板及多個導電結構的組合,其中基板具有多個第一連接墊;以及連接導電結構至一電路板及多個支撐結構的組合,其中支撐結構與導電結構分別連接至電路板的第二連接墊。支撐結構與導電結構彼此電絕緣,且支撐結構的結構強度大於導電結構的結構強度。 The present invention also provides an electronic structure manufacturing method, including: providing a base A combination of a board and a plurality of conductive structures, wherein the substrate has a plurality of first connection pads; and a combination of connecting the conductive structure to a circuit board and a plurality of supporting structures, wherein the supporting structure and the conductive structure are respectively connected to the second connections of the circuit board pad. The support structure and the conductive structure are electrically insulated from each other, and the structural strength of the support structure is greater than that of the conductive structure.
基於上述,在本發明的電子結構及其製造方法中,將結構強度較導電結構大的支撐結構配置於基板與電路板之間,則可提供良好的支撐效果。如此一來,可藉由支撐結構所提供的良好支撐效果維持電子結構具有良好的平整度。此外,若配置有散熱器時,因為支撐結構是對稱配置,也可以防止導電結構受重力擠壓而變形,進而維持電子結構具有良好的電性效果。 Based on the above, in the electronic structure and the manufacturing method thereof of the present invention, a support structure with a stronger structure than the conductive structure is arranged between the substrate and the circuit board to provide a good support effect. In this way, the good support effect provided by the support structure can maintain the electronic structure with good flatness. In addition, if the heat sink is configured, because the supporting structure is symmetrically arranged, it can also prevent the conductive structure from being squeezed and deformed by gravity, thereby maintaining the electronic structure with good electrical effects.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
10:晶片 10: chip
20:第一模版 20: The first template
30:第二模版 30: second template
100、100A、100B、100C1、100C2、100D1、100D2、100E1、100E2、100F1、100F2、100F3、100F4、100G、100H、100I、100J、100K:電子裝置 100, 100A, 100B, 100C1, 100C2, 100D1, 100D2, 100E1, 100E2, 100F1, 100F2, 100F3, 100F4, 100G, 100H, 100I, 100J, 100K: electronic devices
110:基板 110: substrate
112:第一連接墊 112: The first connection pad
114:第一線路結構 114: The first line structure
120:電路板 120: circuit board
122:第二連接墊 122: second connecting pad
124:第二線路結構 124: Second line structure
130:導電結構 130: conductive structure
140、140A、140B:支撐結構 140, 140A, 140B: supporting structure
150:黏著層 150: Adhesive layer
G:空隙 G: gap
M:防焊層 M: solder mask
P1、P2:連接層 P1, P2: connection layer
S1:第一面 S1: First side
S2:第二面 S2: Second side
S3:第三面 S3: Third side
S4:第四面 S4: Fourth side
圖1A至圖1H依序為本發明一實施例的電子結構製造方法的剖面示意圖。 1A to 1H are schematic cross-sectional views of an electronic structure manufacturing method according to an embodiment of the present invention in sequence.
圖2A至圖2B依序為本發明另一實施例的電子結構部分製造方法的剖面示意圖。 2A to 2B are schematic cross-sectional views of a method of manufacturing an electronic structure according to another embodiment of the present invention in sequence.
圖3A至圖3B依序為本發明另一實施例的電子結構部分製造方法的剖面示意圖。 3A to 3B are schematic cross-sectional views of a manufacturing method of an electronic structure part according to another embodiment of the present invention in sequence.
圖4A及圖4B分別為本發明其他多個實施例的電子結構的剖 面示意圖。 4A and 4B are respectively cross-sectional views of the electronic structure of other embodiments of the present invention Schematic diagram.
圖5A及圖5B分別為本發明其他多個實施例的電子結構的剖面示意圖。 5A and 5B are respectively schematic cross-sectional views of the electronic structure of other embodiments of the present invention.
圖6A至圖6F分別為本發明其他多個實施例的電子結構的剖面示意圖。 6A to 6F are respectively schematic cross-sectional views of electronic structures of other embodiments of the present invention.
圖7A至圖7C分別為本發明其他多個實施例的部分電子結構的俯視示意圖。 7A to 7C are schematic top views of partial electronic structures of other embodiments of the present invention.
圖8A至圖8H依序為本發明另一實施例的電子結構製造方法的剖面示意圖。 8A to 8H are schematic cross-sectional views of a method of manufacturing an electronic structure according to another embodiment of the present invention in sequence.
圖9為本發明一實施例的電子結構製造方法的步驟流程圖。 FIG. 9 is a flowchart of steps of a method for manufacturing an electronic structure according to an embodiment of the present invention.
圖10為本發明另一實施例的電子結構製造方法的步驟流程圖。 FIG. 10 is a flowchart of steps of a method for manufacturing an electronic structure according to another embodiment of the present invention.
圖11為本發明另一實施例的電子結構的剖面示意圖。 11 is a schematic cross-sectional view of an electronic structure according to another embodiment of the invention.
圖12為本發明另一實施例的電子結構的剖面示意圖。 12 is a schematic cross-sectional view of an electronic structure according to another embodiment of the invention.
圖1A至圖1H依序為本發明一實施例的電子結構製造方法的剖面示意圖,請先參考圖1A,本實施例提供一種電子結構(見如圖1H的電子結構100)製造方法,在此製造方法中,首先,提供一基板110以及多個連接層P1的組合,其中基板110具有多個第一連接墊112,詳細而言,基板110具有相對的一第一面S1及一第二面S2,且多個第一連接墊112位於第一面S1,一部分(第
一部分)的第一連接墊112未連接於連接層P1,而多個連接層P1則分別連接於另一部分(第二部分)的第一連接墊112。在本實施例中,可先在基板110上形成或額外配置對應上述第一部分第一連接墊112位置的一第一模版20,再將這些連接層P1分別配置於第一模版20對應第一連接墊112位置的開口中,其中第一模版20與對應的這些連接層P1在垂直基板110的一方向上彼此不重疊。在本實施例中,連接層P1為錫膏(solder paste),但在其他實施例中,可依需求選擇使用助焊劑(flux),本發明並不限於此。此外,在本實施例中,基板110的第二面S2的中央處適於連接至少一晶片10,如圖1A所顯示。
1A to 1H are schematic cross-sectional schematic diagrams of an electronic structure manufacturing method according to an embodiment of the present invention. Please refer to FIG. 1A first. This embodiment provides a manufacturing method of an electronic structure (see
請參考圖1B。接著,在上述步驟之後,配置多個支撐結構140至對應的連接層P1上,以分別藉由對應的連接層P1連接至基板110。換句話說,在此步驟中,即形成了基板110、多個連接層P1以及多個支撐結構140的組合。在本實施例中,支撐結構140例如是銅柱、銅環或其他結構強度大於錫球的塊狀結構,本發明並不限於此。此外,在本實施例中,支撐結構140是對稱地分佈在基板110上。具體而言,在本實施例中,以基板110的中央處為對稱中心,支撐結構140的分佈位置是對應且對稱地配置於基板110的邊緣處以及中央處,其中中央處即為對應晶片10的相對位置。換句話說,其中一部分的支撐結構140在基板110上的正投影重疊於晶片10在基板110上的正投影,而其中另一部分的支撐結構140在基板110上的正投影不重疊於晶片10在基板110
上的正投影。
Please refer to Figure 1B. Then, after the above steps, a plurality of supporting
請參考圖1C。接著,在上述步驟之後,移除所形成或額外配置的第一模版20,以進行後續的製作步驟。
Please refer to Figure 1C. Then, after the above steps, the formed or additionally configured
請參考圖1D。接著,在上述步驟之後,在基板110上形成或額外配置對應另一部分第一連接墊112位置的一第二模版30,並且在尚未配置元件的第一部分的第一連接墊112位置分別配置連接層P2,以進行後續的製作步驟。其中,第二模版30與對應的這些連接層P2在垂直基板110的一方向上彼此不重疊。在本實施例中,連接層P2為助焊劑(flux),但在其他實施例中,可依需求選擇使用錫膏(solder paste),本發明並不限於此。
Please refer to Figure 1D. Then, after the above steps, a
請參考圖1E。接著,在上述步驟之後,配置多個導電結構130分別經由對應的連接層P2連接於第一部分的第一連接墊112。換句話說,在此步驟中,即形成了基板110、多個導電結構130以及多個支撐結構140的組合。導電結構130例如是錫球。另外,由上的圖1B的相關說明可知,支撐結構140並不是導電結構130,且支撐結構140的結構強度大於導電結構130的結構強度。此外,在本實施例中,這些支撐結構140與這些導電結構130彼此電絕緣。意即,在基板110或其它連接的電路板線路中,支撐結構140與導電結構130電性不導通。另外,支撐結構140與晶片10的信號導通無關,亦即,支撐結構140未提供導通路徑使晶片10或是基板110的信號可以透過支撐結構140而導通;反之,導電結構130提供導通路徑使晶片10或是基板110的信號可以透
過導電結構130導通。
Please refer to Figure 1E. Next, after the above steps, a plurality of
請參考圖1F。接著,在上述步驟之後,移除所形成或額外配置的第二模版30,以露出導電結構130及支撐結構140而進行後續的製作步驟。此外,在本實施例中,導電結構130與連接層P2的材質相同,所以二者的接合邊界較為模糊,甚至會因熱形變,而熔合在一起。反之,因為支撐結構140與連接層P1的材質不同,則二者的接合邊界較清楚。在其他實施例中,可視需求將圖1B中配置支撐結構140的步驟可與圖1E中配置導電結構130的步驟調整先後順序,本發明對配置導電結構130以及配置支撐結構140的先後順序並無限制。
Please refer to Figure 1F. Then, after the above steps, the formed or additionally configured
請參考圖1G。接著,在上述步驟之後,提供一電路板120以及多個連接層P1的組合,其中電路板120具有多個第二連接墊122。詳細而言,電路板120具有相對的一第三面S3及一第四面S4,且多個第二連接墊122位於第三面S3。電路板120上的多個連接層P1則分別連接於這些第二連接墊122。在本實施例中,可先在電路板120上形成或額外配置對應第二連接墊122位置的模版(未繪示),再將這些連接層P1分別配置於上述模版對應第二連接墊122位置的開口中。在本實施例中,電路板120上的連接層P1的選用可依需求使用助焊劑(flux)或錫膏(solder paste),本發明並不限於此。在本實施例中,電路板120包括一電路結構(未顯示)。
Please refer to Figure 1G. Then, after the above steps, a combination of a
請參考圖1H。接著,在上述步驟之後,將基板110、多
個導電結構130以及多個支撐結構140的組合連接至電路板120。詳細而言,在此步驟中,將電路板120配置於基板110,且將多個導電結構130以及多個支撐結構140分別經由連接層P1連接於第二連接墊122,以形成電子結構100。此外,在本實施例中,導電結構130與電路板120上的連接層P1的材質相同,所以二者的接合邊界較為模糊,甚至會因熱形變,而熔合在一起。反之,因為支撐結構140與連接層P1的材質不同,則二者的接合邊界較清楚。另外,在本實施例中,電路板120的電路結構與支撐結構140彼此電絕緣。也就是說,支撐結構140未提供導通路徑而使電路板120可以和晶片10或是基板110之間的信號可以透過支撐結構140導通。此外,當基板110與電路板120結合後,結構強度較導電結構130大的支撐結構140將可在基板110與電路板120之間提供良好的支撐效果,但未提供信號導通。如此一來,可藉由支撐結構140所提供的良好支撐效果維持電子結構100具有良好的平整度。此外,若配置有散熱器(未圖示)時,因為支撐結構140是對稱配置,也可以防止導電結構130受重力擠壓而變形,進而維持電子結構100具有良好的電性效果。
Please refer to Figure 1H. Next, after the above steps, the
圖2A至圖2B依序為本發明另一實施例的電子結構部分製造方法的剖面示意圖。請先參考圖2A。在本實施例中,在圖1F所繪示的步驟之後,可進行類似圖1G所顯示的製作方法,其兩者不同之處在於,在本實施例中,電路板120上配置對應於導電結構130的為多個連接層P1,而配置對應於支撐結構140的則為多
個黏著層150,亦即,電路板120上配置兩種不同的膜層。如此一來,可節省使用連接層,並同時讓支撐結構140連接於電路板120的黏著層150即產生電絕緣。在一些實施例中,也可利用黏著層150取代基板110上的部分連接層P1(例如連接支撐結構140的連接層P1),而使支撐結構140藉由黏著層150連接於基板110的第一連接墊112,本發明並不限於此。
2A to 2B are schematic cross-sectional diagrams of a manufacturing method of an electronic structure according to another embodiment of the present invention in sequence. Please refer to Figure 2A first. In this embodiment, after the steps shown in FIG. 1F, a manufacturing method similar to that shown in FIG. 1G can be performed. The difference between the two is that, in this embodiment, the
請參考圖2B。接著,在上述步驟之後,將基板110、多個導電結構130以及多個支撐結構140的組合連接至電路板120,以形成電子結構100A。因此,當基板110與電路板120結合後,結構強度較導電結構130大的支撐結構140將可在基板110與電路板120之間提供良好的支撐效果。而且,由於支撐結構140可以對稱配置,故可藉由支撐結構140所提供的良好支撐效果維持電子結構100A具有良好的平整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100A具有良好的電性效果。另外,因為使用具有電絕緣的黏著層150來連接支撐結構140,所以在基板110上靠近黏著層150的電路設計將更有彈性;在電路板120中靠近黏著層150的電路設計亦同。
Please refer to Figure 2B. Next, after the above steps, the combination of the
圖3A至圖3B依序為本發明另一實施例的電子結構部分製造方法的剖面示意圖。請先參考圖3A。在本實施例中,在圖1F所繪示的步驟之後,可進行類似圖1G所顯示的製作方法,其兩者不同之處在於,在本實施例中,電路板120上配置對應於導電結構130的為多個連接層P2,而配置對應於支撐結構140的則可省
略配置連接層。換句話說,支撐結構140以抵接的方式連接於電路板120。如此一來,可節省使用連接層,並同時使後續完成電子結構,因為支撐結構140與電路板120之間可具有一些空隙G(繪示於圖3B),而具有些微彈性或些微錯位的組裝空間。在一些實施例中,亦可使支撐結構140同樣以抵接的方式連接於基板110,本發明並不限於此。
3A to 3B are schematic cross-sectional views of a manufacturing method of an electronic structure part according to another embodiment of the present invention in sequence. Please refer to Figure 3A first. In this embodiment, after the steps shown in FIG. 1F, a manufacturing method similar to that shown in FIG. 1G can be performed. The difference between the two is that, in this embodiment, the
請參考圖3B。接著,在上述步驟之後,將基板110、多個導電結構130以及多個支撐結構140的組合連接至電路板120,以形成電子結構100B,此電子結構100B的支撐結構140與電路板120之間可具有一些空隙G。因此,當基板110與電路板120結合後,結構強度較導電結構130大的支撐結構140將可在基板110與電路板120之間提供良好的支撐效果,並且具有緩衝的空間。如此一來,可藉由支撐結構140所提供的良好支撐效果維持電子結構100B具有良好的平整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100B具有良好的電性效果。
Please refer to Figure 3B. Next, after the above steps, the combination of the
圖4A及圖4B分別為本發明其他多個實施例的電子結構的剖面示意圖。請先參考圖4A。本實施例的電子結構100C1類似於圖1H的電子結構100。兩者不同之處在於,在本實施例中,支撐結構140A可選用被動元件,例如是虛設電容器,以使支撐結構140A在基板110與電路板120之間提供良好的支撐效果,但本發明並不限於此。請再參考圖4B。本實施例的電子結構100C2類似於圖4A的電子結構100C1。兩者不同之處在於,在本實施例中,
可省略配置在電路板120上對應於支撐結構140A的連接層。換句話說,支撐結構140A以抵接的方式連接於電路板120。因此,除了可節省使用連接層之外,由於支撐結構140A與電路板120之間可具有一些空隙G,故可使在後續完成電子結構100C2的步驟中具有些微彈性或些微錯位的組裝空間。如此一來,可藉由支撐結構140A所提供的良好支撐效果維持電子結構100C2具有良好的平整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100C2具有良好的電性效果。在一些實施例中,亦可使支撐結構140A同樣以抵接的方式連接於基板110,本發明並不限於此。
4A and 4B are respectively schematic cross-sectional views of the electronic structure of other embodiments of the present invention. Please refer to Figure 4A first. The electronic structure 100C1 of this embodiment is similar to the
圖5A及圖5B分別為本發明其他多個實施例的電子結構的剖面示意圖。請先參考圖5A。本實施例的電子結構100D1類似於圖1H的電子結構100。兩者不同之處在於,在本實施例中,支撐結構140B可選用錫合金球,例如是銅核心的錫球,以使支撐結構140B在基板110與電路板120之間提供良好的支撐效果,但本發明並不限於此。請再參考圖5B。本實施例的電子結構100D2類似於圖5A的電子結構100D1。兩者不同之處在於,在本實施例中,可省略配置在電路板120上對應於支撐結構140B的連接層。換句話說,支撐結構140B以抵接的方式連接於電路板120。因此,除了可節省使用連接層之外,由於支撐結構140B與電路板120之間可具有一些空隙G,故可使在後續完成電子結構100D2的步驟中具有些微彈性或些微錯位的組裝空間。如此一來,可藉由支撐結構140B所提供的良好支撐效果維持電子結構100D2具有良好的平
整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100D2具有良好的電性效果。在一些實施例中,亦可使支撐結構140B同樣以抵接的方式連接於基板110,本發明並不限於此。
5A and 5B are respectively schematic cross-sectional views of the electronic structure of other embodiments of the present invention. Please refer to Figure 5A first. The electronic structure 100D1 of this embodiment is similar to the
圖6A至圖6F分別為本發明其他多個實施例的電子結構的剖面示意圖。圖7A至圖7C分別為本發明其他多個實施例的部分電子結構的俯視示意圖。請先參考圖6A及圖7A。圖6A所顯示的電子結構100E1的剖面即為圖7A中沿剖線A-A’所顯示的剖面。本實施例的電子結構100E1類似於圖1H的電子結構100。兩者不同之處在於,在本實施例中,支撐結構140在基板110與電路板120之間的分佈方式與圖1H所顯示的分佈方式不同。具體而言,在本實施例中,支撐結構140在基板110上的正投影呈現兩環狀矩形分佈在晶片10在基板110上的正投影的外圍及基板110的最外圍處,如圖7A所顯示,而圖1H的支撐結構,大致配置於晶片10下方(晶片中央處)。因此,可適應於不同種類的電子裝置100E1,而提供良好的支撐效果,但本發明並不限於此。請再參考圖6B。本實施例的電子結構100E2類似於圖6A的電子結構100E1。兩者不同之處在於,在本實施例中,可省略配置在電路板120上對應於支撐結構140的連接層。換句話說,支撐結構140以抵接的方式連接於電路板120。因此,除了可節省使用連接層之外,由於支撐結構140與電路板120之間可具有一些空隙G,故可使在後續完成電子結構100E2的步驟中具有些微彈性或些微錯位的組裝空間。如此一來,可藉由支撐結構140所提供的良好支
撐效果維持電子結構100E2具有良好的平整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100E2具有良好的電性效果。在一些實施例中,亦可使支撐結構140同樣以抵接的方式連接於基板110,本發明並不限於此。
6A to 6F are respectively schematic cross-sectional views of electronic structures of other embodiments of the present invention. 7A to 7C are schematic top views of partial electronic structures of other embodiments of the present invention. Please refer to Figure 6A and Figure 7A first. The cross section of the electronic structure 100E1 shown in FIG. 6A is the cross section shown along the section line A-A' in FIG. 7A. The electronic structure 100E1 of this embodiment is similar to the
請參考圖6C。本實施例的電子結構100F1類似於圖6A的電子結構100E1。兩者不同之處在於,在本實施例中,支撐結構140B選用錫合金球,例如是銅核心的錫球,以使支撐結構140B在基板110與電路板120之間提供良好的支撐效果。另一方面,本實施例的電子結構100F1類似於圖5A的電子結構100D1。兩者不同之處在於,圖6C的支撐結構140B在基板110上的正投影呈現兩環狀矩形連續排列分佈在晶片10外圍,而圖5A的支撐結構140B,大致位於晶片10下方(晶片中央處)。請再參考圖6D。本實施例的電子結構100F2類似於圖6A的電子結構100F1。兩者不同之處在於,在本實施例中,可省略配置在基板110上對應於支撐結構140B的連接層。換句話說,支撐結構140B以抵接的方式連接於基板110。因此,除了可節省使用連接層之外,由於支撐結構140B與基板110之間可具有一些空隙G,故可使在後續完成電子結構100F2的步驟中具有些微彈性或些微錯位的組裝空間。如此一來,可藉由支撐結構140B所提供的良好支撐效果維持電子結構100F2具有良好的平整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100F2具有良好的電性效果。在一些實施例中,亦可使支撐結構140B同樣以抵接的方式連接於電路板
120,本發明並不限於此。
Please refer to Figure 6C. The electronic structure 100F1 of this embodiment is similar to the electronic structure 100E1 of FIG. 6A. The difference between the two is that in this embodiment, the
請參考圖6E。本實施例的電子結構100F3類似於圖6A的電子結構100E1。兩者不同之處在於,在本實施例中,支撐結構140B選用被動元件,例如是虛設電容器,以使支撐結構140B在基板110與電路板120之間提供良好的支撐效果。另一方面,本實施例的電子結構100F3類似於圖4A的電子結構100D1。兩者不同之處在於,圖6E的支撐結構140B在基板110上的正投影呈現兩環狀矩形分佈在晶片10在基板110上的正投影的外圍,而圖4A的支撐結構140A,大致位於晶片10下方(晶片中央處)。請再參考圖6F。本實施例的電子結構100F4類似於圖6E的電子結構100F3。兩者不同之處在於,在本實施例中,可省略配置在電路板120上對應於支撐結構140B的連接層。換句話說,支撐結構140B以抵接的方式連接於電路板120。因此,除了可節省使用連接層之外,由於支撐結構140B與電路板120之間可具有一些空隙G,故可使在後續完成電子結構100F4的步驟中具有些微彈性或些微錯位的組裝空間。如此一來,可藉由支撐結構140B所提供的良好支撐效果維持電子結構100F4具有良好的平整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100F4具有良好的電性效果。在一些實施例中,亦可使支撐結構140B同樣以抵接的方式連接於基板110,本發明並不限於此。
Please refer to Figure 6E. The electronic structure 100F3 of this embodiment is similar to the electronic structure 100E1 of FIG. 6A. The difference between the two is that, in this embodiment, the supporting
請參考圖7B。本實施例的電子結構100G類似於圖7A的電子結構100E1。兩者不同之處在於,在本實施例中,支撐結構
140在基板110與電路板120之間的分佈方式與圖7A所顯示的分佈方式不同。具體而言,在本實施例中,支撐結構140以L形狀地分佈在基板110上,如圖7B所顯示。詳細而言,在本實施例中,支撐結構140在基板110上的正投影呈現至少一L形狀分佈於晶片10在基板110上的正投影的外圍或基板110的最外圍處。更具體而言,支撐結構140以L形狀排列分佈於晶片10外圍的四個角落以及基板110的四個角落。因此,可適應於不同種類的電子裝置100G,而提供良好的支撐效果,但本發明並不限於此。
Please refer to Figure 7B. The
請參考圖7C。本實施例的電子結構100H類似於圖7A的電子結構100E1。兩者不同之處在於,在本實施例中,支撐結構140在基板110與電路板120之間的分佈方式與圖7A所顯示的分佈方式不同。具體而言,在本實施例中,支撐結構140分佈在基板110上具有間隔,如圖7C所顯示。詳細而言,在本實施例中,支撐結構140在基板110上的正投影呈現至少一環狀矩形點狀排列分佈於晶片10在基板110上的正投影的外圍或基板110的最外圍處。因此,可適應於不同種類的電子裝置100H,而提供良好的支撐效果,但本發明並不限於此。
Please refer to Figure 7C. The
需特別說明的是,圖7A至圖7C的支撐結構140在基板110與電路板120之間的分佈方式也可適用於圖1至圖6的電子結構,其端視不同需求情況而決定。此外,圖7A至圖7C的支撐結構140在基板110與電路板120之間的分佈方式是成對稱分佈。
It should be particularly noted that the distribution of the
圖8A至圖8H依序為本發明另一實施例的電子結構製造
方法的剖面示意圖。請先參考圖8A。本實施例提供一種電子結構(見如圖8H的電子結構100I)製造方法。在此製造方法中,首先,提供一基板110以及多個連接層P2的組合,類似於圖1A所繪示電子結構100的製作方法。兩者不同之處在於,在本實施例中,位於基板110第一面S1的第一連接墊112彼此之間的間距不同,且在基板110上形成或額外配置的第一模版20對應第一連接墊112位置。其中,第一模版20與對應的這些連接層P2在垂直基板110的一方向上彼此不重疊。
FIGS. 8A to 8H show the manufacturing of an electronic structure according to another embodiment of the present invention in sequence
Schematic cross-section of the method. Please refer to Figure 8A first. This embodiment provides a method for manufacturing an electronic structure (see electronic structure 100I in FIG. 8H). In this manufacturing method, first, a combination of a
請參考圖8B。接著,在上述步驟之後,配置多個導電結構130至對應的連接層P2上,以分別藉由對應的連接層P2連接至基板110。
Please refer to Figure 8B. Then, after the above steps, a plurality of
請參考圖8C。接著,在上述步驟之後,移除所形成或額外配置的第一模版20,以進行後續的製作步驟。
Please refer to Figure 8C. Then, after the above steps, the formed or additionally configured
請參考圖8D。另一方面,在此製造方法中,可另提供一電路板120以及多個連接層P1的組合。在本實施例中,在電路板120上形成或額外配置對應非導電結構130位置(導電結構130位置如圖8C所示)的一第二模版30,以進行後續的製作步驟。其中,第二模版30與對應的這些連接層P1在垂直電路板120的一方向上彼此不重疊。
Please refer to Figure 8D. On the other hand, in this manufacturing method, a combination of a
請參考圖8E。接著,在上述步驟之後,配置多個支撐結構140至對應的連接層P1上,以分別藉由對應的連接層P1連接至電路板120。
Please refer to Figure 8E. Then, after the above steps, a plurality of
請參考圖8F。接著,在上述步驟之後,移除所形成或額外配置的第二模版30,以進行後續的製作步驟。在其他實施例中,可視需求製作圖8F所顯示的部分電子結構先於圖8C所顯示的部分電子結構,本發明對提供圖8C所顯示的部分電子結構以及圖8F所顯示的部分電子結構的先後順序並無限制。
Please refer to Figure 8F. Then, after the above steps, the formed or additionally configured
請參考圖8G及圖8H。接著,在上述步驟之後,於電路板120上、對應圖8C的導電結構130位置配置多個連接層P1,以將基板110以及多個導電結構130的組合連接至具有連接層P1的電路板120以及多個支撐結構140的組合。意即,將圖8C所顯示的部分電子結構與圖8F所顯示的部分電子結構結合。在此實施例中,因為支撐結構140以抵接的方式連接於基板110,當基板110與電路板120結合後,支撐結構140與基板110之間可具有一些空隙G,而具有些微彈性或些微錯位的組裝空間,故結構強度較導電結構130大的支撐結構140將可在基板110與電路板120之間提供良好的支撐效果。如此一來,可藉由支撐結構140所提供的良好支撐效果維持電子結構100I具有良好的平整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100I具有良好的電性效果。另外,因為支撐結構140以抵接的方式連接於基板110,所以基板110上、對應支撐結構140的位置,不需配置第一連接墊112,如此在基板110上、靠近支撐結構140的位置的電路設計將更有彈性。反之,如果支撐結構140抵接的方式是位於電路板120,則電路板120上、靠近支撐結構140的位置的電路
設計也將更有彈性。
Please refer to Figure 8G and Figure 8H. Next, after the above steps, a plurality of connecting layers P1 are arranged on the
圖9為本發明一實施例的電子結構製造方法的步驟流程圖。請參考圖1G、圖1H及圖9。本實施例提供一種電子結構的製造方法,至少可應用於圖1H所顯示的電子結構100中,但本發明並不限於此。為方便說明,以下將以圖1H所顯示的電子結構100為例。在本實施例所提供的電子結構100製造方法中,首先,執行步驟S200,提供一基板110、多個導電結構130及多個支撐結構140的組合,其中基板110具有多個第一連接墊112,如圖1G所顯示。
FIG. 9 is a flowchart of steps of a method for manufacturing an electronic structure according to an embodiment of the present invention. Please refer to Figure 1G, Figure 1H and Figure 9. This embodiment provides a manufacturing method of an electronic structure, which can be applied at least to the
接著,在上述步驟S200之後,執行步驟S210,連接導電結構130至一電路板120,如圖1H所顯示。詳細而言,支撐結構140與導電結構130分別連接至基板110的第一連接墊112。支撐結構140與導電結構130彼此電絕緣,且支撐結構140的結構強度大於導電結構130的結構強度。因此,當基板110與電路板120結合後,結構強度較導電結構130大的支撐結構140將可在基板110與電路板120之間提供良好的支撐效果。如此一來,可藉由支撐結構140所提供的良好支撐效果維持電子結構100具有良好的平整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100具有良好的電性效果。
Next, after the above step S200, step S210 is performed to connect the
圖10為本發明另一實施例的電子結構製造方法的步驟流程圖。請參考圖8G、圖8H及圖10。本實施例提供一種電子結構的製造方法,至少可應用於圖8H所顯示的電子結構100I中,但
本發明並不限於此。為方便說明,以下將以圖8H所顯示的電子結構100I為例。在本實施例所提供的電子結構100製造方法中,首先,執行步驟S300,提供一基板110以及多個導電結構130的組合,其中基板110具有多個第一連接墊112,如圖8G所顯示。
FIG. 10 is a flowchart of steps of a method for manufacturing an electronic structure according to another embodiment of the present invention. Please refer to Figure 8G, Figure 8H and Figure 10. This embodiment provides a manufacturing method of an electronic structure, which can be applied at least to the electronic structure 100I shown in FIG. 8H, but
The present invention is not limited to this. For convenience of description, the electronic structure 100I shown in FIG. 8H will be taken as an example below. In the manufacturing method of the
接著,在上述步驟S300之後,執行步驟S310,連接導電結構130至一電路板120及多個支撐結構140的組合,如圖8H所顯示。詳細而言,支撐結構140與導電結構130分別連接至電路板120的第二連接墊122。支撐結構140與導電結構130彼此電絕緣,且支撐結構140的結構強度大於導電結構130的結構強度。因此,當基板110與電路板120結合後,結構強度較導電結構130大的支撐結構140將可在基板110與電路板120之間提供良好的支撐效果。如此一來,可藉由支撐結構140所提供的良好支撐效果維持電子結構100I具有良好的平整度,同時防止導電結構130受重力擠壓而變形,進而維持電子結構100I具有良好的電性效果。
Then, after the above step S300, step S310 is performed to connect the
圖11為本發明另一實施例的電子結構的剖面示意圖。請參考圖11。本實施例的電子結構100J類似於圖3B的電子結構100B。兩者不同之處在於,在本實施例中,可在電路板120上對應支撐結構140抵接的位置處,配置防焊層M以覆蓋位於電路板120中的第二電路結構124。如此一來,可透過防焊層M以使支撐結構140與電路板120彼此電絕緣,並且可使電子結構100J透過防焊層M以下的空間進行線路規劃。關於本實施例中防焊層M,可依照需求,應用於其他實施例中,並不以此為限。
11 is a schematic cross-sectional view of an electronic structure according to another embodiment of the invention. Please refer to Figure 11. The
圖12為本發明另一實施例的電子結構的剖面示意圖。請參考圖12。本實施例的電子結構100K類似於圖11的電子結構100J。兩者不同之處在於,在本實施例中,可在基板110上對應支撐結構140抵接的位置處,配置防焊層M以覆蓋位於基板110中的第一電路結構114。如此一來,可透過防焊層M以使支撐結構140與基板110彼此電絕緣,並且可使電子結構100K透過防焊層M以上的空間進行線路規劃。關於本實施例中防焊層M,可依照需求,應用於其他實施例中,並不以此為限。
12 is a schematic cross-sectional view of an electronic structure according to another embodiment of the invention. Please refer to Figure 12. The
綜上所述,在本發明的電子結構及其製造方法中,將結構強度較導電結構大的支撐結構配置於基板與電路板之間,則可提供良好的支撐效果。如此一來,可藉由支撐結構所提供的良好支撐效果維持電子結構具有良好的平整度。此外,若配置有散熱器時,因為支撐結構是對稱配置,也可以防止導電結構受重力擠壓而變形,進而維持電子結構具有良好的電性效果。 In summary, in the electronic structure and the manufacturing method thereof of the present invention, a support structure with a stronger structure than a conductive structure is arranged between the substrate and the circuit board to provide a good support effect. In this way, the electronic structure can be maintained with good flatness due to the good supporting effect provided by the supporting structure. In addition, if the heat sink is configured, because the supporting structure is symmetrically arranged, it can also prevent the conductive structure from being squeezed and deformed by gravity, thereby maintaining the electronic structure with good electrical effects.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
10:晶片 10: chip
100:電子裝置 100: electronic device
110:基板 110: substrate
112:第一連接墊 112: The first connection pad
120:電路板 120: circuit board
122:第二連接墊 122: second connecting pad
130:導電結構 130: conductive structure
140:支撐結構 140: support structure
P1:連接層 P1: Connection layer
S1:第一面 S1: First side
S2:第二面 S2: Second side
S3:第三面 S3: Third side
S4:第四面 S4: Fourth side
Claims (37)
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TW108126499A TWI711133B (en) | 2019-07-26 | 2019-07-26 | Electronic structure and manufacturing method thereof |
CN201910862802.6A CN110931363B (en) | 2019-07-26 | 2019-09-12 | Method for manufacturing electronic structure |
CN201910862602.0A CN110931362B (en) | 2019-07-26 | 2019-09-12 | Method for manufacturing electronic structure |
CN201910862603.5A CN110931444B (en) | 2019-07-26 | 2019-09-12 | Electronic structure |
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TWI283490B (en) * | 2005-10-17 | 2007-07-01 | Phoenix Prec Technology Corp | Circuit board structure of integrated optoelectronic component |
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CN110931363B (en) | 2022-09-27 |
CN110931444A (en) | 2020-03-27 |
CN110931363A (en) | 2020-03-27 |
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