TWI571888B - Connection lines for semiconductor devices - Google Patents
Connection lines for semiconductor devices Download PDFInfo
- Publication number
- TWI571888B TWI571888B TW104130999A TW104130999A TWI571888B TW I571888 B TWI571888 B TW I571888B TW 104130999 A TW104130999 A TW 104130999A TW 104130999 A TW104130999 A TW 104130999A TW I571888 B TWI571888 B TW I571888B
- Authority
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- Taiwan
- Prior art keywords
- bonding wire
- concentration
- bonding
- mass
- alloy
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 239000011247 coating layer Substances 0.000 claims description 68
- 239000010410 layer Substances 0.000 claims description 66
- 239000011162 core material Substances 0.000 claims description 59
- 229910045601 alloy Inorganic materials 0.000 claims description 54
- 239000000956 alloy Substances 0.000 claims description 54
- 229910052763 palladium Inorganic materials 0.000 claims description 53
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 49
- 229910052737 gold Inorganic materials 0.000 claims description 46
- 239000013078 crystal Substances 0.000 claims description 36
- 229910052697 platinum Inorganic materials 0.000 claims description 17
- 229910052741 iridium Inorganic materials 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 238000005259 measurement Methods 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 description 74
- 238000000034 method Methods 0.000 description 54
- 229910052733 gallium Inorganic materials 0.000 description 25
- 229910052732 germanium Inorganic materials 0.000 description 25
- 238000011156 evaluation Methods 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 24
- 238000007747 plating Methods 0.000 description 24
- 238000000576 coating method Methods 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 21
- 238000012360 testing method Methods 0.000 description 16
- 238000004458 analytical method Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- 238000007772 electroless plating Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 238000005491 wire drawing Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
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- 238000005498 polishing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000005486 sulfidation Methods 0.000 description 2
- 229910002710 Au-Pd Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002265 electronic spectrum Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
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- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05164—Palladium [Pd] as principal constituent
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- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/4382—Applying permanent coating, e.g. in-situ coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/1576—Iron [Fe] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Materials Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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JP2015159692 | 2015-08-12 |
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TW201707009A TW201707009A (zh) | 2017-02-16 |
TWI571888B true TWI571888B (zh) | 2017-02-21 |
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TW104130999A TWI571888B (zh) | 2015-08-12 | 2015-09-18 | Connection lines for semiconductor devices |
TW109108341A TW202111728A (zh) | 2015-08-12 | 2015-09-18 | 半導體裝置用接合線 |
TW105143225A TWI690944B (zh) | 2015-08-12 | 2015-09-18 | 半導體裝置用接合線 |
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TW109108341A TW202111728A (zh) | 2015-08-12 | 2015-09-18 | 半導體裝置用接合線 |
TW105143225A TWI690944B (zh) | 2015-08-12 | 2015-09-18 | 半導體裝置用接合線 |
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JP (3) | JP6002337B1 (ja) |
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CN (2) | CN106463495B (ja) |
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PH (2) | PH12016502022A1 (ja) |
SG (2) | SG11201608627YA (ja) |
TW (3) | TWI571888B (ja) |
WO (1) | WO2017026077A1 (ja) |
Families Citing this family (11)
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JP6167227B2 (ja) | 2014-04-21 | 2017-07-19 | 新日鉄住金マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
MY162048A (en) | 2015-06-15 | 2017-05-31 | Nippon Micrometal Corp | Bonding wire for semiconductor device |
EP3136435B1 (en) | 2015-07-23 | 2022-08-31 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
MY162884A (en) * | 2015-08-12 | 2017-07-20 | Nippon Micrometal Corp | Bonding wire for semiconductor device |
JP6452661B2 (ja) * | 2016-11-11 | 2019-01-16 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
JP6371932B1 (ja) * | 2017-02-22 | 2018-08-08 | 新日鉄住金マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
WO2018155283A1 (ja) * | 2017-02-22 | 2018-08-30 | 新日鉄住金マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
EP3667710B1 (en) * | 2017-08-09 | 2022-01-05 | NIPPON STEEL Chemical & Material Co., Ltd. | Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
CN110998814B (zh) | 2017-08-09 | 2021-04-23 | 日铁化学材料株式会社 | 半导体装置用Cu合金接合线 |
JP7036838B2 (ja) * | 2017-12-28 | 2022-03-15 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
JP2021098886A (ja) * | 2019-12-20 | 2021-07-01 | Jx金属株式会社 | 積層造形用金属粉末及び該金属粉末を用いて作製した積層造形物 |
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TW201140718A (en) * | 2010-02-03 | 2011-11-16 | Nippon Steel Materials Co Ltd | Copper bonding wire for semiconductor, and bonding structure of the copper bonding wire |
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2015
- 2015-09-17 MY MYPI2016703849A patent/MY162884A/en unknown
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- 2015-09-17 KR KR1020177018735A patent/KR102183517B1/ko active IP Right Grant
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- 2015-09-17 EP EP15889429.5A patent/EP3157046B1/en active Active
- 2015-09-17 WO PCT/JP2015/076487 patent/WO2017026077A1/ja active Application Filing
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- 2015-09-17 US US15/305,584 patent/US9887172B2/en active Active
- 2015-09-17 CN CN202010782102.9A patent/CN111719064B/zh active Active
- 2015-09-17 DE DE112015007271.3T patent/DE112015007271B3/de active Active
- 2015-09-17 SG SG10201705029XA patent/SG10201705029XA/en unknown
- 2015-09-17 KR KR1020167028190A patent/KR101758038B1/ko active IP Right Grant
- 2015-09-17 DE DE112015004682.8T patent/DE112015004682B4/de active Active
- 2015-09-18 TW TW104130999A patent/TWI571888B/zh active
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- 2015-09-18 TW TW105143225A patent/TWI690944B/zh active
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2016
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- 2016-10-11 PH PH12016502022A patent/PH12016502022A1/en unknown
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- 2017-12-22 US US15/852,798 patent/US10121758B2/en active Active
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TW201140782A (en) * | 2010-01-27 | 2011-11-16 | Sumitomo Bakelite Co | Semiconductor device |
TW201140718A (en) * | 2010-02-03 | 2011-11-16 | Nippon Steel Materials Co Ltd | Copper bonding wire for semiconductor, and bonding structure of the copper bonding wire |
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