TWI552377B - Method for fabricating a resonant cavity light emitting diode using a metal thin film to form a mirror - Google Patents

Description

Resonant cavity light-emitting diode using mirror formed by metal film

The invention relates to a light-emitting diode formed by using a metal film to form a resonant cavity, in particular to a top and a bottom mirror required for using a metal as a resonant cavity light-emitting diode structure, and having a simplified mirror fabrication and improvement The advantage of the luminous efficiency of the light-emitting diode.

Light Emitting Diode (LED) is an artificial light source that can be widely used in lighting, display, and optical communication. Compared with traditional light sources, it has small volume, fast response, long life and low power consumption. Etc. If a mirror is added to the luminescent layer of the LED structure to form a resonant cavity structure and becomes a so-called Resonant Cavity Light Emitting Diode (RCLED), the angular distribution of light emitted from the luminescent layer can be further changed. The majority of the light falls within the escape pyramid and leaves the semiconductor surface, thereby increasing the light extraction rate and improving the luminous efficiency of the light-emitting diode. The resonance structure also filters the light emitted by the light-emitting diode. Only the light of a specific band can be left and released, so that the illuminating spectrum can be effectively narrowed, the dispersion phenomenon caused by the optical fiber transmission can be reduced, and the signal transmission quality can be improved. The design of the reflector reflectivity of the RCLED is usually (90%-99%) in the lower mirror and (<90%) in the upper mirror. The light generated by the illuminating layer will be reflected back and forth between the two mirrors to change the emission. Angle and screening wavelength, and finally the light is emitted by the upper mirror. RCLED mirrors can be selected from two different refractive index materials (thickness λ/n × 1/4) alternately stacked Bragg reflectors (DBR), directly grown in the LED luminescent layer by epitaxy Up and down. It consists of a combination of the difference in refractive index between materials and a specific thickness of a quarter effective illuminating wavelength ( λ/n ) ( λ is the illuminating wavelength; n is the refractive index of the material), so that the luminescent layer The generated light can produce constructive interference when passing through the interface of each pair of materials. Therefore, the accumulation of multiple interferences allows the Bragg mirror to achieve maximum reflection. The reflectivity can be simply obtained by the matrix method:

Under the influence of constructive interference of multi-layer reflected waves, the reflectivity increases with the increase of the number of stacked layers. The reflectivity of DBR is related to the refractive index difference Δn of two constituent materials. If the number of layers of DBR is increased, Then, the reflectance value can be increased, and if the refractive index difference of the constituent materials is larger, a smaller number of layers can achieve a high reflectance. However, the choice of materials is limited by the lattice constant of the substrate, and it must be consistently grown on the substrate. If the number of stacked layers is increased to achieve the desired reflectivity, it is also considered whether the stress generated by the multilayer stack will be Causes disintegration of the stack structure itself.

The general influence of LED characteristics is whether the Joule heat generated by the luminescent layer during the operation of the component can be effectively removed. However, the conventional RCLED uses a Bragg mirror formed by multiple stacking of materials above and below the luminescent layer to hinder the extraction of Joule heat. In addition, in order to achieve a certain reflectance at a specific wavelength, the thickness of the material of the stacked layer needs to be precisely controlled. Therefore, the use of the Bragg mirror not only affects the characteristics of the element but also increases the difficulty of the process. The design of goodness needs to be improved. CL Tsai et al., April 2009, "Journal of Vacuum Science & Technology B", Vol. 27, No. 3, 1080-1085, "Fabrication and characterization of the substrate-free InGaN-based resonant-cavity light-emitting diodes for Plastic optical fiber communications" refers to a thin film RCLED structure (Thin-film RCLED) with an upper mirror using three pairs of Ta2O5/SiO2 a Bragg mirror composed of an electro-mechanical material group, and a lower mirror uses a laser lift-off technique (LLO) to peel off the substrate of the LED, and then vapor-deposits the metal as a mirror to form a resonant cavity structure, and further by metal Excellent thermal conductivity makes it easier to derive heat to solve the heat dissipation problem of LED components, making its Thin-film RCLEDs have excellent luminescent properties. Usually, the metal absorbs light so that the transmittance is lowered, so it is not suitable as an upper mirror. However, the reflectance and transmittance spectrum of silver metal at different thicknesses are shown in Fig. 1, and it is found that it can be changed in addition to the thickness of the plating layer. In addition to the required reflectivity, the penetration rate also increases as the thickness of the coating decreases.

In view of the above-mentioned prior art, the use of metal as a mirror helps to solve the heat dissipation problem of the RCLED element and the thickness reduction of the silver film has a significant effect on the light transmittance. The inventor of the present invention has improved and innovated and proposed to utilize a metal. The thin film forms the resonant cavity light-emitting diode of the mirror, and the metal is used as the resonant cavity structure of the upper and lower mirrors of the RCLED respectively. In addition to the Joule heat generated when the RCLED operation is derived, the metal mirror is also better than the Prague mirror. The mirror is simple to make.

The main object of the present invention is to provide a resonant cavity light-emitting diode formed by using a metal thin film, and a metal as a mirror required for the resonant cavity structure, thereby simplifying the process of the resonant cavity light-emitting diode and maintaining its component characteristics. Stable.

The resonant cavity light-emitting diode of the mirror formed by the metal film can achieve the above object, and the reflectivity and the transmittance of the light are changed by adjusting the thickness of the metal to respectively conform to the resonant cavity light-emitting diode. The characteristics of the upper and lower mirrors are required. The basic structure is to sequentially epitaxially grow an N-type cladding layer, a light-emitting layer and a P-type cladding layer on an epitaxial substrate. In P Firstly, a layer of film metal with a predetermined thickness is prepared as a mirror, and then the epitaxial substrate is stripped by a lift-off technique, and finally another metal reflection is formed on the stripped surface (N-type cladding layer). The mirror is composed of an upper and lower metal mirror and a light-emitting layer. The resonant cavity light-emitting diode of the present invention is formed by using a metal film to form a mirror. 2A is a resonant cavity light-emitting diode for forming a mirror by using a metal thin film according to the present invention. As shown in the figure, the layers of the structure are an upper metal mirror 204, a P-type cladding layer 201, a light-emitting layer 202, and an N-type coating. The cladding layer 203, the lower metal mirror 205, and the resonant cavity light-emitting diode structure formed by the Bragg mirror in FIG. 2B, as shown in the figure, each layer structure is an upper Bragg mirror 206, a P-type cladding layer 201, and a light-emitting layer. Layer 202, N-type cladding layer 203, and lower Bragg reflector 207, these two figures show the advantage that the Bragg mirror formed by replacing the pair of material groups with the thin film metal as a mirror has the advantages of simple structure, and by the mirror The excellent electrical/thermal characteristics of the metal can uniformly distribute the current perfused into the cavity of the resonant cavity to the luminescent layer for photoelectric conversion, thereby reducing the problem of poor luminescence properties of the device caused by the current crowding effect, and is generated in the luminescent layer. The Joule heat can also be quickly derived from the upper and lower metal mirrors respectively to maintain the stability of the device characteristics.

In summary, the present invention is summarized as follows: a resonant cavity light-emitting diode using a metal film to form a mirror, comprising: an epitaxial substrate on which a nucleation layer, a buffer layer, and a buffer layer are sequentially grown. An N-type cladding layer, a light-emitting layer and a P-type cladding layer; an upper mirror forming a thin metal layer on the surface of the P-type cladding layer as the upper mirror, and covering the surface of the upper mirror A layer of transparent dielectric material is used as a protection; and a lower mirror is used to strip the epitaxial substrate by a lift-off technique, and a high-reflectivity metal layer is formed on the surface after stripping as the lower mirror.

In the present invention, the epitaxial substrate is a sapphire substrate, and the buffer layer It is undoped gallium nitride (GaN).

In the present invention, wherein the thin metal layer is silver metal, the thickness thereof is determined by the reflectance and transmittance required for the upper mirror.

In the present invention, the high reflectivity metal layer is nickel (Ni) / silver (Ag) / titanium (Ti) / gold (Au) metal or silver (Ag) / chromium (Cr) / gold (Au) The metal has both the lower mirror and the ohmic contact electrode function.

A resonant cavity light-emitting diode using a metal film to form a mirror, the main structure comprising: an epitaxial substrate, which is sequentially epitaxially grown to form a nucleation layer, a buffer layer, an N-type cladding layer, and a light-emitting layer a layer and a P-type cladding layer; a lower mirror forming a high reflectivity metal layer on the surface of the P-type cladding layer as the lower mirror; and an upper mirror for imparting the epitaxial substrate by a lift-off technique Stripping, and forming an interdigitated metal layer on the stripped surface, the surface area of the interdigitated metal layer gap forming a thin metal layer required as the upper mirror, and finally on the surface of the upper mirror Covered with a layer of transparent dielectric material for protection.

In the present invention, the epitaxial substrate is a sapphire substrate, and the buffer layer is undoped gallium nitride (GaN).

In the present invention, wherein the thin metal layer is silver metal, the thickness thereof is determined by the reflectance and transmittance required for the upper mirror.

In the present invention, the high reflectivity metal layer is nickel (Ni) / silver (Ag) / titanium (Ti) / gold (Au) metal or silver (Ag) / chromium (Cr) / gold (Au) The metal has both the lower mirror and the ohmic contact electrode function.

A method for fabricating a resonant cavity light-emitting diode using a metal film to form a mirror, comprising at least the following steps: defining a light-emitting region and a light-emitting region by using a semiconductor process technology on a surface of a P-type cladding layer of a light-emitting diode structure a P-type contact electrode region; then a transparent conductive layer and a thin silver metal are sequentially formed in the light-emitting region, and the surface of the thin silver metal layer is covered with a transparent layer a dielectric material layer is used as a protection; then a cerium oxide layer and a metal layer are sequentially formed in the P-type contact electrode region, wherein the metal layer needs to be confirmed to maintain a good electrical connection with the transparent conductive layer; One of the diodes is adhered to a glass temporary substrate by a wax, and an epitaxial substrate of one of the back surfaces of the LED is thinned, and then a laser of a suitable wavelength is selected to irradiate the light. Epitaxial substrate, performing stripping of the epitaxial substrate; and forming a silver (Ag)/chromium (Cr) metal layer with high reflectivity on the surface of an N-type cladding layer as an ohmic electrode of the N-type cladding layer And the lower mirror function, the surface of the silver (Ag) / chromium (Cr) metal layer is covered with a gold (Au) metal to bond and remove the glass temporary substrate through the solder and the gold plated permanent substrate.

In the present invention, the transparent conductive layer is Indium Tin Oxide (ITO) or Al-doped ZnO (AZO), so that the perfusion current can be uniformly distributed in the resonant cavity. The luminescent layer of the polar body reduces the problem of poor light-emitting characteristics of the components due to the current crowding effect.

In the present invention, the laser of the appropriate wavelength is a KrF excimer laser with a wavelength of 248 nm, which utilizes the principle of interaction between light and matter, so that the sapphire substrate cannot absorb the photon of the energy, but can be formed by GaN. The epitaxial substrate is peeled off by the characteristics of the core layer absorption.

A method for fabricating a resonant cavity light-emitting diode using a metal film to form a mirror, the method comprising: forming one of high reflectivity nickel (Ni)/silver on a surface of a P-type cladding layer of a light-emitting diode structure ( a metal layer, and a titanium (Ti)/gold (Au) metal layer is formed on the surface of the nickel (Ni)/silver (Ag) metal layer to bond with the gold plated permanent substrate; one of the light emitting diodes The front side is adhered to a glass temporary substrate by using a wax, and an epitaxial substrate of one of the back surfaces of the light-emitting diode is thinned, and then a laser of a suitable wavelength is selected to irradiate the light-emitting diode. The epitaxial substrate is subjected to stripping of the epitaxial substrate; and one of the N-type cladding layers after peeling is sequentially formed into one of the fingers a (Cr) metal layer and a gold (Au) metal layer respectively serving as contact electrodes for the ohmic electrode and the component packaging treatment of the N-type cladding layer; and finally covering a silver (Ag) metal layer as a protective transparent layer A layer of electrical material.

In the present invention, the laser of the appropriate wavelength is a KrF excimer laser with a wavelength of 248 nm, which utilizes the principle of interaction between light and matter, so that the sapphire substrate cannot absorb the photon of the energy, but can be formed by GaN. The epitaxial substrate is peeled off by the characteristics of the core layer absorption.

In the present invention, the surface of the light-emitting region of the gap of the contact electrode in the shape of the interdigitation forms a thin silver (Ag) metal layer required as the upper mirror, and the thickness thereof is determined in accordance with the reflectance.

The resonant cavity light-emitting diode provided by the invention for forming a mirror by using a metal film has the following advantages when compared with the above cited documents and other conventional techniques:

1. The present invention provides a resonant cavity light-emitting diode using a metal film to form a mirror, and the thickness and the transmittance of the metal are adjusted to adjust the reflectance and transmittance of the light to be used as a resonant cavity light-emitting diode. The mirror has the advantages of elastic design in conjunction with the resonant cavity design and simplified mirror manufacturing.

2. The invention provides a resonant cavity light-emitting diode using a metal film to form a mirror, and the Joule heat generated by the light-emitting diode can be rapidly separated from the upper and lower metal mirrors by the excellent thermal conductivity of the metal. Derived to improve the heat dissipation of the component and improve the degradation of the luminous efficiency of the component due to thermal effects.

3. The invention provides a resonant cavity light-emitting diode using a metal film to form a mirror. The mirror formed by metal can also serve as an ohmic contact electrode, so that the current can be uniformly poured into the light-emitting layer to avoid the current crowding effect. The problem of poor light-emitting characteristics of components.

However, the above description is only a preferred embodiment of the present invention, and the present invention cannot be limited thereto. The scope of the invention, that is, the simple equivalent changes and modifications made by the present invention in the scope of the invention and the scope of the invention are still within the scope of the invention.

The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. Hereinafter, the present invention will be further described with reference to the accompanying drawings: the present invention mainly uses a metal film to form a mirror required for a resonant cavity light-emitting diode, thereby simplifying the process of the resonant cavity light-emitting diode and obtaining stable component characteristics. By varying the thickness of the metal to adjust its reflectance and transmittance to the wavelength of the light, in addition, the excellent electrical conductivity of the metal to electricity and heat can further increase the ability of the component to operate at high current densities. In the embodiment of the present invention, the metal plating film may use, for example, a silver (Ag) metal, which has a large reflectance and transmittance change in a wavelength range of 400 nm to 900 nm between 10 nm and 30 nm in thickness, and can be used as a resonant cavity. The upper mirror of the polar body, while the silver of thickness greater than 40 nm is suitable as a lower mirror because of its large reflectivity and small transmittance. The implementation steps of the method of the invention and its advantages are next illustrated in two embodiments. However, it is not intended to limit the scope of the invention.

First embodiment:

Please refer to FIG. 3 , which is a structure of a resonant cavity light-emitting diode using a metal film to form a mirror. The light-emitting diode structure 300 has a P-type cladding layer 306 , a light-emitting layer 305 , and an N-type cladding layer . 304, buffer layer 303, nucleation layer 302 and epitaxial substrate 301. The epitaxial substrate 301 is a sapphire substrate, and the nucleation layer 302 is gallium nitride (GaN). For epitaxial growth of a nitride material, the buffer layer 303 is undoped gallium nitride (GaN), and the light-emitting layer 305 is a multi-quantum well (Quantum Well) composed of undoped InGaN and GaN materials, P-type cladding The layer 306 and the N-type cladding layer 304 are respectively composed of Mg-doped and Si-doped GaN materials. 4 is a flow chart of manufacturing a resonant cavity light-emitting diode using a metal film to form a mirror according to the present invention, and FIGS. 5 to 8 are product structure diagrams of the first embodiment corresponding to the manufacturing flow of FIG. First, step 401 is performed as shown in FIG. 5, and the light-emitting region 501 and the P-type contact electrode region 502 are defined on the surface of the P-type cladding layer 306 by using a semiconductor process technology, and then the transparent conductive layer 503 and the thin silver are sequentially formed in the light-emitting region 501. (Ag) metal 504, wherein the transparent conductive layer 503 can be Indium Tin Oxide (ITO) or Al-doped ZnO (AZO) to promote uniform distribution of the perfusion current in the resonant cavity. The luminescent layer 305 of the polar body reduces the problem of poor light-emitting characteristics of the element due to the current crowding effect; the thickness of the thin silver metal layer 504 as the upper metal mirror depends on the reflectivity requirement, and the thin silver metal layer (upper metal) The surface of the mirror 504 is further covered with a layer of transparent dielectric material 505 for protection. Next, in step 402, a ceria layer 601 and a chromium (Cr)/gold (Au) metal layer 602 are sequentially formed in the P-type contact electrode region 502, wherein the ceria layer 601 functions as a current barrier under the P-type contact electrode. The layer can reduce the problem of light emission under the electrode and absorption by the metal electrode. In addition, the metal layer 602 needs to be confirmed to be in good electrical connection with the transparent conductive layer 503, and can be used as a contact electrode for component packaging processing, as shown in FIG. Then, in step 403, the front surface of the light-emitting diode in which the above-mentioned process steps are completed is adhered to the glass temporary substrate 701 by a wax as shown in FIG. 7, and the back surface epitaxial substrate (sapphire substrate) 301 is thinned. The laser of the appropriate wavelength is selected to illuminate the back surface of the light-emitting diode, and the sapphire substrate 301 can not absorb the photon of the energy by the principle of interaction between the light and the substance, but can be absorbed by the GaN nucleation layer 302. Features come in The epitaxial substrate is peeled off. The laser can use a KrF excimer laser with a wavelength of 248 nm, and the energy can be absorbed by the GaN nucleation layer 302 to be vaporized and decomposed to achieve the separation of the GaN buffer layer 303 from the substrate (sapphire substrate) 301. The stripped surface is usually It will be covered with gallium (Ga) metal, which can be cleaned and removed with an aqueous hydrochloric acid solution (hydrochloric acid ratio of 1:1). In addition, in order to form an ohmic electrode on the N-type cladding layer 304, inductively coupled plasma reactive ion etching can be reused ( The undoped GaN buffer layer 303 is removed by ICP-RIE. Finally, in step 404, a high reflectivity silver (Ag)/chromium (Cr) metal layer 801 is formed on the surface of the clean N-type cladding layer 304 as an ohmic electrode of the N-type cladding layer 304 and has a lower mirror function. The surface of the silver (Ag)/chromium (Cr) metal layer 801 is then covered with gold (Au) metal 802 to bond and remove the glass temporary substrate 701 through the solder and the gold plated permanent substrate 803, as shown in FIG. A first embodiment of a resonant cavity light-emitting diode of the present invention which utilizes a metal thin film to form a mirror.

Second embodiment:

However, the second embodiment of the present invention is a resonant cavity light-emitting diode using a metal film to form a mirror. The manufacturing process is similar to that of the first embodiment. The difference is that the light is emitted in the opposite direction, so the upper and lower metals are The order in which the mirrors are formed differs, and only the steps 401 and 404 of forming the metal mirror in the second embodiment will be described in detail.

Referring to FIG. 9, step 401 is performed to form a high reflectivity nickel (Ni)/silver (Ag) metal layer 901 on the surface of the P-type cladding layer 306 of a light-emitting diode structure 300, and nickel (Ni)/silver (Ag). A surface of the metal layer 901 is further formed with a titanium (Ti)/gold (Au) metal layer 902 for bonding with the gold plated permanent substrate 903. Since the metal layer 901 has the function of forming the ohmic electrode and the lower mirror together with the P-type cladding layer 306, the step 402 can be omitted, and the substrate can be directly peeled off according to the step 403 of the first embodiment. After peeling off the surface of the N-type cladding layer 304, step 404 is sequentially formed to form the interdigitated chromium (Cr) metal. The layer 1001 and the gold (Au) metal layer 1002 are respectively used as the ohmic electrode of the N-type cladding layer 304 and the contact electrode of the component packaging process, wherein the interdigitated electrode is capable of uniformly infiltrating the cavity into the resonant cavity light-emitting diode Light-emitting layer 305. The surface of the light exiting region of the interdigitated electrode gap forms a thin silver (Ag) metal layer 1003 as an upper mirror, the thickness of which is determined according to the reflectivity requirement, and finally the silver (Ag) metal layer 1003 is further covered as a transparent transparent layer. The electro-chemical material layer 1004, as shown in Fig. 10, is a second embodiment of a resonant cavity light-emitting diode of the present invention which uses a metal thin film to form a mirror.

The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; the modifications and equivalents of the present invention are intended to be included in the scope of the present invention without departing from the spirit and scope of the invention. Within the scope of protection.

101‧‧ ‧ reflectance curve of thin silver metal with thickness of 30 nm at various wavelengths

102‧‧ ‧ reflectance curve of thin silver metal with a thickness of 20 nm at various wavelengths

103‧‧‧ Reflectance curve of thin silver metal with a thickness of 10 nm at various wavelengths

104‧‧‧Transmission curve of thin silver metal with a thickness of 10 nm at various wavelengths

105‧‧‧Transmission curve of thin silver metal with a thickness of 20nm at various wavelengths

106‧‧‧Transmission curve of thin silver metal with thickness of 30nm at various wavelengths

201‧‧‧P type coating

202‧‧‧Lighting layer

203‧‧‧N type coating

204‧‧‧Upper metal mirror

205‧‧‧Under metal mirror

206‧‧‧Upper Bragg reflector

207‧‧‧ Lower Bragg reflector

300‧‧‧Lighting diode structure

301‧‧‧ epitaxial substrate

302‧‧‧ nucleation layer

303‧‧‧buffer layer

304‧‧‧N type coating

305‧‧‧Lighting layer

306‧‧‧P type coating

401‧‧‧ steps

402‧‧‧Steps

403‧‧‧Steps

404‧‧‧Steps

501‧‧‧Lighting area

502‧‧‧P type contact electrode area

503‧‧‧Transparent conductive layer

504‧‧‧Silver (Ag) metal layer (upper metal mirror)

505‧‧‧ dielectric material layer

601‧‧‧ cerium oxide (SiO ₂ ) layer

602‧‧‧Chromium (Cr)/gold (Au) metal layer

701‧‧‧glass temporary substrate

801‧‧‧Silver (Ag)/chromium (Cr) metal layer

802‧‧‧ gold (Au) metal layer

803‧‧‧ gold plated permanent substrate

901‧‧‧ Nickel (Ni) / Silver (Ag) metal layer (lower metal mirror)

902‧‧‧Titanium (Ti)/gold (Au) metal layer

903‧‧‧ Gold plated permanent substrate

1001‧‧‧Chromium (Cr) metal layer

1002‧‧‧ gold (Au) metal layer

1003‧‧‧Silver (Ag) metal layer (upper metal mirror)

1004‧‧‧ dielectric material layer

Figure 1 shows the reflectance curve and transmittance curve of silver metal at various wavelengths at different thicknesses; Figure 2A shows the light-emitting diode of the resonant cavity formed by the metal film mirror; Figure 2B shows the resonance of the Bragg mirror. The light-emitting diode of the cavity; FIG. 3 is a structure of the light-emitting diode of the present invention; FIG. 4 is a flow chart of manufacturing a resonant cavity light-emitting diode using a metal film to form a mirror; The manufacturing process of the resonant cavity light-emitting diode using the metal film to form the mirror, the product structure diagram of the first embodiment corresponding to the step 401 is performed; FIG. 6 is a reflection of the metal film according to the present invention. a manufacturing process of the resonant cavity light-emitting diode of the mirror, and a product structure diagram of the first embodiment corresponding to the step 402; 7 is a manufacturing process diagram of a resonant cavity light-emitting diode using a metal thin film to form a mirror according to the present invention, and a product structure diagram of the first embodiment corresponding to step 403 is performed; FIG. 8 is a use of the present invention. The manufacturing process of the resonant cavity light-emitting diode forming the mirror of the metal film, the product structure diagram of the first embodiment corresponding to the step 404 is performed; FIG. 9 is a resonant cavity light-emitting of the mirror formed by the metal film of the present invention. The manufacturing process of the diode, the product structure diagram of the second embodiment corresponding to the step 401; FIG. 10 is a manufacturing process of the resonant cavity light-emitting diode using the metal film to form the mirror, and the steps are performed. a product structure diagram of the second embodiment corresponding to 404;

Step 401 to step 404

Claims (6)

A method for fabricating a resonant cavity light-emitting diode using a metal film to form a mirror, comprising at least the following steps: (1) defining a light using a semiconductor process technology on a surface of a P-type cladding layer of a light-emitting diode structure a region and a P-type contact electrode region; (2) then sequentially forming a transparent conductive layer and a thin silver metal in the light-emitting region, the surface of the thin silver metal layer being covered with a transparent layer of dielectric material as protection (3) sequentially forming a ruthenium dioxide layer and a metal layer in the P-type contact electrode region, wherein the metal layer needs to be confirmed to maintain a good electrical connection with the transparent conductive layer; (4) the light-emitting diode One of the bodies is adhered to a glass temporary substrate by a wax, and an epitaxial substrate of one of the back surfaces of the light-emitting diode is thinned, and then a laser of appropriate wavelength is irradiated to the epitaxial layer. Substrate, performing stripping of the epitaxial substrate; and (5) forming a silver (Ag)/chromium (Cr) metal layer of high reflectivity on the surface of an N-type cladding layer as an ohmic layer of the N-type cladding layer Electrode and the function of the lower mirror, the silver (Ag) / chromium (Cr) The surface of the metal layer is then covered with a gold (Au) metal to bond and remove the glass temporary substrate through the solder and the gold plated permanent substrate. The method for fabricating a resonant cavity light-emitting diode using a metal thin film forming mirror according to claim 1, wherein the transparent conductive layer is indium tin oxide (ITO) or aluminum-doped oxide. Zinc (Al-doped ZnO, AZO) allows the perfusion current to be evenly distributed in the light-emitting layer of the light-emitting diode of the resonant cavity, thereby reducing the problem of poor light-emitting characteristics of the device due to the current crowding effect. A method for fabricating a resonant cavity light-emitting diode using a metal thin film to form a mirror according to the first aspect of the invention, wherein the laser of the appropriate wavelength is a wavelength 248 nm KrF excimer laser, which utilizes light and The principle of material interaction makes the sapphire substrate unable to absorb photons of this energy, but the epitaxial substrate can be peeled off by the absorbing properties of the GaN nucleation layer. A method for fabricating a resonant cavity light-emitting diode using a metal film to form a mirror, the steps comprising: (1) forming a high reflectivity nickel (Ni) on a surface of a P-type cladding layer of a light-emitting diode structure a /Silver (Ag) metal layer, and then forming a titanium (Ti) / gold (Au) metal layer on the surface of the nickel (Ni) / silver (Ag) metal layer for bonding with the gold plated permanent substrate; (2) One of the light-emitting diodes is adhered to a glass temporary substrate by a wax, and an epitaxial substrate of one of the back surfaces of the light-emitting diode is thinned, and then a laser of a suitable wavelength is selected to illuminate the light-emitting diode. The epitaxial substrate of the light-emitting diode performs stripping of the epitaxial substrate; (3) one surface of the N-type cladding layer after peeling sequentially forms a chromium (Cr) metal layer and a gold layer (Au) a metal layer respectively serving as a contact electrode for the ohmic electrode and the component packaging process of the N-type cladding layer; and (4) finally covering a silver (Ag) metal layer as a protective transparent material layer. A method for fabricating a resonant cavity light-emitting diode using a metal thin film to form a mirror according to the fourth aspect of the invention, wherein the laser of the appropriate wavelength is a wavelength 248 nm KrF excimer laser, which utilizes light and The principle of material interaction makes the sapphire substrate unable to absorb photons of this energy, but can be absorbed by the GaN nucleation layer to perform the epitaxial substrate. Stripped. A method for fabricating a resonant cavity light-emitting diode using a metal thin film to form a mirror according to the fourth aspect of the invention, wherein a surface of the light exiting region of the gap of the contact electrode in the shape of a fork is formed as the upper mirror The thickness of the thin silver (Ag) metal layer is determined by the reflectance requirements.