TWI523295B - 包含可撓式基板之有機發光裝置及其製備方法 - Google Patents
包含可撓式基板之有機發光裝置及其製備方法 Download PDFInfo
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- TWI523295B TWI523295B TW102141682A TW102141682A TWI523295B TW I523295 B TWI523295 B TW I523295B TW 102141682 A TW102141682 A TW 102141682A TW 102141682 A TW102141682 A TW 102141682A TW I523295 B TWI523295 B TW I523295B
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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Description
本申請案優先權主張於2012年11月30日向韓國專利局提出之韓國專利第10-2012-0138336號申請案之優先權,其中該些案所揭露之內容全部併入本案參考。
本發明係關於一包含可撓式基板之有機發光裝置及其製備方法。
一有機發光裝置係藉由兩相對電極及夾置其中之具有一有類似半導體性質之多層之有機材料薄膜所形成。具有前述構造之有機發光裝置使用一透過使用有機材料將電能轉換光能之現象,意即,一有機發光現象。具體而言,於一有機材料層設置於一陽極及一陰極間之結構中,當電壓施加於該兩電極間時,來自陽極之電洞及來自陰極之電子注入該有機材料層。當注入之電洞及電子彼此相遇時,形成一激子,且該激子再次落至一基態以發射光線。
於前述有機發光裝置中,產生自該有機材料層之光線穿過一光穿透電極而發射,且該有機發光裝置一般可
分為上發光型、下發光型及兩側發光型。於上發光及下發光型的情形中,兩電極之一者需為光穿透電極,且於兩側發光型的情形中,兩電極皆需為光穿透電極。
關於前述有機發光裝置,當柯達公司(Kodak Co.,Ltd)宣布使用一多層結構時可以低電壓驅動元件,引發許多研究關注其之,且近來一使用有機發光裝置之自然色顯示器已附於一行動電話並商業化。
再者,近期研究已實現於有機發光裝置上使用磷光材料取代現有螢光材料,效率已大幅改善,且也可預期未來該元件能夠取代已知照明。
為了使用該有機發光裝置作為照明,該元件需被驅動之高亮度並不同於已知自然色顯示器,且與已知照明類似,需維持固定亮度。為了充分地改善該有機發光裝置之亮度,需實現於大面積中之發光,且為了實現於大面積中之發光,需使用高驅動電流。此外,為了保持於大面積中之固定亮度,前述高電流需均勻地注入該具有大面積之裝置。
因此,目前需進行一可藉由簡化製造過程降低製程成本且包含一具有可撓性質之基板之有機發光裝置之研究。
據此,本發明係提供一可撓式有機發光裝置之製備方法,包括:1)形成一聚醯亞胺層於一載體基板上;2)
形成一塑膠基板於該載體基板及該聚醯亞胺層上;3)形成一有機發光裝置於該塑膠基板上;以及4)分離該載體基板。
再者,本發明係提供一透過該可撓式有機發光裝置製備方法製造之可撓式有機發光裝置。
再者,本發明係提供一可撓式有機發光裝置,包括:一聚醯亞胺層;一塑膠基板,形成於該聚醯亞胺層上;以及一有機發光裝置,形成於該塑膠基板上。
再者,本發明係提供一可撓式有機發光裝置,包括:一塑膠基板;以及一有機發光裝置,形成於該塑膠基板上,其中,一矽烷耦合劑包含於該塑膠基板下表面之至少一部份中。
再者,本發明係提供一顯示裝置,其包含該可撓式有機發光裝置。
再者,本發明係提供一照明裝置,其包含該可撓式有機發光裝置。
根據本發明,其可提供一可藉由簡化製造過程降低製程成本並包括一具有可撓性質之基板之有機發光裝置。
再者,根據本發明,於該塑膠基板上製備該有機發光裝置之製程與在玻璃基板上製備該有機發光裝置之製程相同,從而其可應用於已存在之製程,且該塑膠基板可自由地脫附。
100‧‧‧玻璃
102‧‧‧光敏性聚醯亞胺
104‧‧‧黏著促進劑
105‧‧‧表面處理
106‧‧‧透明聚醯亞胺膜
108‧‧‧有機發光裝置
110‧‧‧封裝
D1‧‧‧裁切線
圖1係本發明示例型實施例之層疊塑膠基板於一聚醯亞胺層上之方法之示意圖。
圖2係本發明示例型實施例之形成於該塑膠基板上之有機發光裝置之剖視示意圖。
圖3係本發明示例型實施例之分離一載體基板之方法之示意圖。
以下,將詳細描述本發明。
近來,產品之輕量及微型化於顯示器領域中已變得舉足輕重,然而目前所使用之玻璃基板係不利地重、易於脆裂、且難以用於一連續製程中。據此,將取代玻璃基板之塑膠基板應用至一行動電話、筆記型電腦、及PDA等之研究已積極地進行中。
聚醯亞胺具有其易於合成、可用以製造薄膜、及不須架橋基以硬化之優點。近來,依據電子產品之輕量及精確性,聚醯亞胺係廣泛地應用至如LCD、PDP及OLED之半導體材料以作為一整合材料(integration material)。再者,已有許多使用聚醯亞胺於一輕且可撓式塑膠顯示基板之研究在進行,以補償使用於顯示器領域之玻璃基板之重且脆之缺點。
於本領域中,包含聚醯亞胺膜之有機發光裝置所需的製程,係於玻璃基板上形成一聚醯亞胺膜,於該聚醯亞胺膜上形成一有機發光裝置,然後由該玻璃基板上分
離該包含該聚醯亞胺膜之有機發光裝置。在此情況中,由該玻璃基板分離該包含聚醯亞胺膜之有機發光裝置而無任何修飾之分離技術係為重要。
一般而言,由於形成於該玻璃基板上之聚醯亞胺膜黏著性差,於該玻璃基板上需進行使用矽烷耦合劑、電暈、電漿等之表面處理以增強該玻璃基板及該聚醯亞胺膜間之黏著性。然而,之後可能有難以將聚醯亞胺膜從經表面處理之玻璃基板上分離的問題。據此,於本領域中,一犧牲層(sacrificial layer)係形成於該聚醯亞胺膜下,或該聚醯亞胺膜係藉由雷射、UV照射等分離。
此外,日本專利公開號第2011-142168號揭露一種電子裝置之製造方法,包括:僅於一非可撓式基板上貼附一可撓式膜之區域之周邊區域上添加一黏著劑;黏附該可撓式膜於該非可撓式基板上並於該可撓式膜上形成一裝置;以及裁切其上形成該裝置之可撓式膜,並且由該非可撓式基板剝離該可撓式膜。然而,在僅於該非可撓式基板上貼附該可撓式膜之區域之周邊區域上添加該黏著劑之情況中,可能沿著形成於該非可撓式基板及該可撓式膜間之空置空間產生一翹曲現象,從而難以形成大面積之有機發光裝置。
據此,本發明之目的係在提供一有機發光裝置之製備方法,藉此,其可透過簡化製程而降低製造成本,其可製造具有大面積之有機發光裝置,且該有機發光裝置可包括一具有可撓性質之基板。
根據本發明示例型實施例之可撓式有機發光裝置之製備方法包括:1)形成一聚醯亞胺層於一載體基板上;2)形成一塑膠基板於該載體基板及該聚醯亞胺層上;3)形成一有機發光裝置於該塑膠基板上;以及4)分離該載體基板。
於本發明中,步驟1)為一形成該聚醯亞胺層於該載體基板上之步驟。本領域習知之材料可使用作為該載體基板。更具體地,可使用一玻璃基板、一金屬基板、一塑膠基板及其類似物作為該載體基板,但該載體基板並不以此為限。
該載體基板之厚度可為0.5mm至0.7mm,但並不以此為限。
可藉由使用本領域習知方法形成該聚醯亞胺層。更具體地,可藉由一層疊一聚醯亞胺膜於一載體基板上之製程形成該聚醯亞胺層,亦可透過塗佈一聚醯胺酸組成物於一載體基板上並硬化該聚醯胺酸組成物而形成該聚醯亞胺層。再者,可透過網版印刷聚醯亞胺而形成該聚醯亞胺層,但並不以此為限。
該聚醯亞胺層具有優異的耐化性及耐熱性,從而當後續製造該有機發光裝置時,該聚醯亞胺層可利於進行一光製程。
步驟1)可更包括一圖案化該聚醯亞胺層之步驟。意即,該聚醯亞胺層可僅形成於後續該載體基板上形成該有機發光裝置之一區域。
於本發明中,步驟2)為一形成該塑膠基板於該載體基板及該聚醯亞胺層上之步驟。
該方法可更包括一添加黏著劑於步驟2)之該載體基板及該塑膠基板之間與該聚醯亞胺層及該塑膠基板之間之步驟。於該添加該黏著劑之步驟中,可於該載體基板及該塑膠基板上進行一矽烷耦合劑表面處理法、一電暈表面處理法、或一電漿表面處理法。可於該載體基板及該聚醯亞胺層之整個上部進行該表面處理。該表面處理之目的為增強該載體基板及該塑膠基板間之黏著性。
該塑膠基板可選自由聚乙烯對苯二甲酸酯(polyethylene terephthalate,PET)、聚酯(polyester)、聚碳酸酯(polycarbonate,PC)、聚醯亞胺(polyimide,PI)、聚萘二甲酸乙二酯(polyethylene naphthalate,PEN)、聚二醚酮(polyether ether ketone,PEEK)、聚芳香酯(polyarylate,PAR)、聚環烯烴(polycylicolefin,PCO)、聚降冰片烯(polynorbornene)、聚醚碸(polyethersulphone,PES)、及環烯烴聚合物(cycloolefin polymer,COP)所組成之群組,但不以此為限。
更具體地,可藉由層疊該塑膠基板於該載體基板及該聚醯亞胺層上之製程進行步驟2)。
再者,可藉由塗佈該聚醯胺酸組成物於該載體基板及該聚醯亞胺層上並硬化該聚醯胺酸組成物以形成一聚醯亞胺膜之製程進行步驟2)。
圖1例示一層疊該聚醯亞胺膜於光敏性聚醯
亞胺之方法。首先,在玻璃100上形成圖案化的光敏性聚醯亞胺(PSPI)102。接著,於光敏性聚醯亞胺102與玻璃100上塗佈黏著促進劑104。然後,於光敏性聚醯亞胺102與玻璃100上層疊透明聚醯亞胺(PI)膜106。
該塑膠基板可具有一大於該聚醯亞胺層面積之面積。再者,該塑膠基板可具有與該玻璃基板面積相同之面積,但不以此為限。於不具有聚醯亞胺層之塑膠基板之較低部分之區域中,該塑膠基板可直接並牢固地黏附於該經表面處理之載體基板,並且該塑膠基板可相對較弱地黏附至該經表面處理之聚醯亞胺層。該塑膠基板及該經表面處理之聚醯亞胺層彼此相對弱地黏附,從而後續可易於分離該載體基板、該聚醯亞胺層及其類似物。具體而言,具有5至10mm寬度之對應該載體基板之邊界區域之一邊緣區域之區域可牢固地黏附至該經表面處理之載體基板及該塑膠基板。
再者,於不具有聚醯亞胺層之塑膠基板之較低部分之區域中,該塑膠基板可直接並牢固地黏附於該經表面處理之載體基板,從而當後續形成該有機發光裝置時,可充分承受所進行之光製程、沉積製程等,並且可確保即便在250℃以上之高溫之黏著性質。
於本發明中,步驟3)為一形成該有機發光裝置於該塑膠基板上之步驟。該有機發光裝置可包括一陽極、一層以上有機材料層、及一陰極。
該陽極可為一種以上選自由鎂(magnesium)、
鈣(calcium)、鈉(sodium)、鉀(potassium)、鈦(titanium)、銦(indium)、釔(yttrium)、鋰(lithium)、釓(gadolinium)、鋁(a1uminum)、鉑(platinum)、金(gold)、鎢(tungsten)、鉭(tantalum)、銅(copper)、銀(silver)、錫(tin)及鉛(lead)。
此外,該陽極亦可由一透明導電氧化物形成。於此,該透明導電氧化物可為至少一選自由銦(indium,In)、錫(tin,Sn)、鋅(zinc,Zn)、鎵(gallium,Ga)、鈰(cerium,Ce)、鎘(cadmium,Cd)、鎂(magnesium,Mg)、鈹(beryllium,Be)、銀(silver,Ag)、鉬(molybdenum,Mo)、釩(vanadium,V)、銅(copper,Cu)、銥(iridium,Ir)、銠(rhodium,Rh)、釕(ruthenium,Ru)、鎢(tungsten,W)、鈷(cobalt,Co)、鎳(nickel,Ni)、錳(manganese,Mn)、鋁(aluminum,Al)、及鑭(lanthanum,La)之氧化物。
該陽極可藉由使用:選自由濺鍍(sputtering)、電子束蒸鍍(E-beam evaporation)、熱蒸鍍(thermal evaporation)、雷射分子束磊晶(laser molecular beam epitaxy,L-MBE)及脈衝雷射沉積(pulsed laser deposition,PLD)之任一物理氣相沉積(physical vapor deposition,PVD);選自由熱化學氣相沉積(thermal chemical vapor deposition)、電漿增強化學氣相沉積(plasma-enhanced chemical vapor deposition,PECVD)、光化學氣相沉積(light chemical vapor deposition)、雷射化學氣相沉積(laser chemical vapor deposition)、金屬有機化學氣相沉積(metal-organic chemical vapor deposition,MOCVD)及氫化
物氣相磊晶(hydride vapor phase epitaxy,HVPE)之任一化學氣相沉積(chemical vapor deposition);或原子層沉積(atomic layer deposition,ALD)。
可額外包括一輔助電極以改善該陽極之阻抗性。該輔助電極可由一種以上選自由導電密封劑及金屬所組成之群組透過沉積製程或印刷製程而形成。更具體地,該輔助電極可包括Cr、Mo、Al、Cu、其合金及其類似物,但並不以此為限。
一絕緣層可額外包含於該輔助電極上。可藉由使用本領域習知之材料及方法形成該絕緣層。更具體地,可透過使用一般光阻材料、聚醯亞胺、聚丙烯酸、氮化矽、氧化矽、氧化鋁、氮化鋁、鹼金屬氧化物、鹼土金屬氧化物、及其類似物形成該絕緣層,但不以此為限。該絕緣層之厚度可形成為10nm至10μm,但不以此為限。
用於該有機材料層之具體材料及形成方法並不特別受限,且可使用本領域廣為習知之材料及形成方法。
除了沉積法之外,可藉由如旋鍍法、浸塗法、刮片法、網版印刷法、噴墨印刷法、熱轉印法等溶劑製程,使用各種聚合物材料以製備具有較少層之有機材料層。
該有機材料層可具有一堆疊結構,其包括一發光層、並包含一種以上選自由電洞注入層、電洞傳輸層、電子傳輸層及電子注入層。
作為能夠形成該電洞注入層之材料,具有大功函數之材料係較佳,從而可促進於該有機材料層中之電洞
注入。該電洞注入材料之具體例包括:一金屬,例如釩(vanadium)、鉻(chromium)、銅(copper)、鋅(zinc)及金(gold)、或其合金;一金屬氧化物,例如氧化鋅(zinc oxide)、氧化銦(indium oxide)、氧化銦錫(indium tin oxide,ITO)及氧化銦鋅(indium zinc oxide,IZO);一金屬及氧化物之組合,例如ZnO:Al或SnO2:Sb;一電性導電聚合物,例如聚(3-甲基噻吩)(poly(3-methylthiophene))、聚[3,4-(乙烯-1,2-二氧基)噻吩](poly[3,4-(ethylene-1,2-dioxy)thiophene],PEDT)、聚吡咯(polypyrrole)及聚苯胺(polyaniline)、及其類似物,但不以此為限。
作為能夠形成該電子注入層之材料,具有小功函數之材料係較佳,從而電子易於注入該有機材料層。該電子注入層之具體例包括:一金屬,例如鎂(magnesium)、鈣(calcium)、鈉(sodium)、鉀(potassium)、鈦(titanium)、銦(indium)、釔(yttrium)、鋰(lithium)、釓(gadolinium)、鋁(aluminum)、銀(silver)、錫(tin)及鉛(lead),或其合金;一多層材料,例如LiF/Al或LiO2/Al、及其類似物,並且可使用作為該電洞注入電極材料之相同材料作為該電子注入材料,但該電子注入材料並不以此為限。
作為能夠形成該發光層之材料,以能夠藉由分別接受來自電洞傳輸層之電洞及來自電子傳輸層之電子並結合該電洞及電子而發射可見光區內之光線之材料、及具有作為螢光或磷光之高量子效率之材料為佳。其具體例包括:8-羥基喹啉鋁複合物(8-hydroxy-quinoline-aluminum
complex,Alq3);咔唑系化合物(carbazole-based compounds);二聚苯乙烯基化合物(dimerized styryl compounds);BAlq;10-羥基苯並喹啉金屬化合物(10-hydroxybenzoquinoline-metal compounds);苯並噁唑系(benzoxazole-based)、苯並噻唑系(benzthiazole-based)及苯並咪唑系(benzimidazole-based)化合物;聚(對苯撐乙烯)系聚合物(poly(p-phenylenevinylene)(PPV)-based polymers);螺環化合物(spiro compounds);聚芴(polyfluorene)及紅熒烯(rubrene);磷光主體CBP[[4,4'-雙(9-咔唑基)聯苯](phosphorescence host CBP[[4,4'-bis(9-carbazolyl)biphenyl]]及其類似物,但不以此為限。
再者,該有機發光材料可更包括一磷光摻雜物或螢光摻雜勿以提升螢光或磷光特性。該磷光摻雜物之具體例包括三(2-苯基吡啶)合銥(ir(ppy)(3),[fac tris(2-phenylpyridine)iridium])、銥(III)雙(4,6-二氟苯基-吡啶-N,C2)吡啶甲酸甲酯(F2Irpic[iridium(III)bis(4,6,-di-fluorophenyl-pyridinato-N,C 2)picolinate])、或其類似物。作為該螢光摻雜物,可使用本領域習知之物質。
作為能夠形成該電子傳輸層之材料,較佳為能夠很好地接受來自電子注入層之電子並傳輸該電子至該發光層且具有高電子遷移率之材料。其具體例包括:8-羥基喹啉(8-hydroxyquinoline)之Al複合物;包含Alq3之複合物;
有機放射性化合物;羥基黃酮金屬複合物;及其類似物,但不以此為限。
該陰極可包括Al、Ag、Ca、Mg、Au、Mo、Ir、Cr、Ti、Pd、及其合金之至少一者,但不以此為限。
圖2示意地例示一形成於該塑膠基板上之有機發光裝置之剖視圖。其中經表面處理105後之透明聚醯亞胺膜106上形成有有機發光裝置108,且有機發光裝置108之外部覆蓋有封裝110。
於本發明中,於步驟3)後可更包括一有機發光裝置之封裝步驟。該封裝之目的在於避免外來物質(如氧及濕氣)滲透進入該有機發光裝置,且可使用本領域習知之材料、方法等進行。
可藉由形成一覆蓋於該有機發光裝置之外部之密封部進行該封裝製程。
若當覆蓋該有機發光裝置之外部時,該密封部可密封該有機發光裝置,其材料並不特別限定。舉例而言,可藉由以一密封膜壓緊於該有機發光裝置之外部或沉積一金屬或金屬氧化物而形成該密封部,或是可藉由塗佈並硬化一樹脂組成物而形成該密封部。
再者,可透過一原子層沉積法沉積一金屬或氧化物而形成該密封部。於此,所形成之金屬層或金屬氧化物層可具有兩層以上之結構。
於本發明中,步驟4)為一分離該載體基板之步驟。
於本領域中,分離形成於一表面經處理之載體基板上之聚醯亞胺膜是困難的,從而係形成一犧牲層於該聚醯亞胺層下,或藉由雷射、UV照射等分離該聚醯亞胺膜。然而,於本發明中,在不具有聚醯亞胺層之塑膠基板之下部之區域中,該塑膠基板直接且牢固地貼附於該表面經處理之載體基板,並且透過使用圖案化之聚醯亞胺層,該塑膠基板相對弱地貼附於該表面經處理之聚醯亞胺層,從而可能易於分離該載體基板、該聚醯亞胺層等。具體之分離方法可包括藉由使用刀片、雷射等分離該載體基板、該聚醯亞胺層等之方法(例如自圖2或圖3之裁切線D1裁切),但並不以此為限。
圖3示意地例示一下述分離載體基板之方法。
再者,本發明提供一透過該有機發光裝置製造方法製造之有機發光裝置。
再者,根據本發明一示例型實施例之可撓式有機發光裝置包括:一聚醯亞胺層;一塑膠基板,形成於該聚醯亞胺層上;以及一有機發光裝置,形成於該塑膠基板上。
於本發明中,一矽烷耦合劑可額外包含於該聚醯亞胺層及該塑膠基板間之至少一部份。該矽烷耦合劑可用以改善該聚醯亞胺層及該塑膠基板間之黏著性。
再者,根據本發明另一示例型實施例之可撓式有機發光裝置包括:一塑膠基板;以及一有機發光裝置,形成於該塑膠基板上,並且該塑膠基板下表面之至少一部
份包含一矽烷耦合劑。
於根據本發明之可撓式有機發光裝置中,該聚醯亞胺層、該塑膠基板、該有機發光裝置等之內容與上述內容相同,因而將省略其之詳細描述。
根據本發明之可撓式有機發光裝置可包括一光萃取結構。更具體地,一光萃取層可更包含於該塑膠基板及該有機發光裝置之間。
若該光萃取層具有一能夠誘導光散射並改善該有機發光裝置光萃取效率之結構,該光萃取層並不特別受限。更具體地,該光萃取層可具有一散射顆粒分散於黏結劑中之結構。
再者,該光萃取層可藉由一方法(如旋塗、棒塗佈、狹縫塗佈等)直接形成於一基底構件上,或可藉由製備一膜形式之層之方法以貼附於該基底構件上。
再者,一平坦層可更包含於該光萃取層上。
再者,本發明係提供一包含該有機發光裝置之顯示裝置。於該顯示裝置中,該有機發光裝置可作為一畫素或一背光源。本領域技術人員可應用至該顯示裝置之其他配置。
再者,本發明係提供一包含該有機發光裝置之照明裝置。於該照明裝置中,該有機發光裝置可作為一發光部。本領域技術人員可應用至需要該照明裝置之其他配置。
如上所述,根據本發明,其可提供該有機發光
裝置,其可藉由簡化製造過程而減少製程成本並且包括一具有可撓性質之基板。
100‧‧‧玻璃
102‧‧‧光敏性聚醯亞胺
104‧‧‧黏著促進劑
106‧‧‧透明聚醯亞胺膜
Claims (18)
- 一種可撓式有機發光裝置之製備方法,包括:1)形成一聚醯亞胺層於一載體基板上;2)於該載體基板及該聚醯亞胺層上進行一表面處理,其中該表面處理包括矽烷耦合劑表面處理、電暈表面處理、或電漿表面處理;3)形成一塑膠基板於經該表面處理之該載體基板及該聚醯亞胺層上;4)形成一有機發光裝置於該塑膠基板上;5)分離該載體基板;以及6)與步驟5)同時或於步驟5)之後去除該聚醯亞胺層。
- 如申請專利範圍第1項所述之製備方法,其中,步驟1)更包括:圖案化該聚醯亞胺層。
- 如申請專利範圍第1項所述之製備方法,其中,步驟1)之該聚醯亞胺層係形成於該載體基板上之形成有該有機發光裝置之一區域。
- 如申請專利範圍第1項所述之製備方法,其中,步驟1)之該聚醯亞胺層係藉由塗佈及硬化一聚醯胺酸組成物而形成。
- 如申請專利範圍第1項所述之製備方法,其中,該載體基板係為一玻璃基板、一金屬基板、或一塑膠基板。
- 如申請專利範圍第1項所述之製備方法,其中,該載體基板之厚度係為0.5mm至0.7mm。
- 如申請專利範圍第1項所述之製備方法,其中,步驟 3)係藉由層疊該塑膠基板於經該表面處理之該載體基板及該聚醯亞胺層上之一製程而進行。
- 如申請專利範圍第1項所述之製備方法,其中,該塑膠基板係選自由聚乙烯對苯二甲酸酯(polyethylene terephthalate,PET)、聚酯(polyester)、聚碳酸酯(polycarbonate,PC)、聚醯亞胺(polyimide,PI)、聚萘二甲酸乙二酯(polyethylene naphthalate,PEN)、聚二醚酮(polyether ether ketone,PEEK)、聚芳香酯(polyarylate,PAR)、聚環烯烴(polycylicolefin,PCO)、聚降冰片烯(polynorbornene)、聚醚碸(polyethersulphone,PES)、及環烯烴聚合物(cycloolefin polymer,COP)所組成之群組。
- 如申請專利範圍第1項所述之製備方法,其中,該塑膠基板包括一聚醯亞胺膜,且步驟3)係藉由塗佈一聚醯胺酸組成物於該載體基板及該聚醯亞胺層上並硬化該聚醯胺酸組成物以形成一聚醯亞胺膜之程序而進行。
- 如申請專利範圍第1項所述之製備方法,其中,步驟3)之塑膠基板具有一大於步驟1)之聚醯亞胺層面積之面積。
- 如申請專利範圍第1項所述之製備方法,其中,步驟3)之塑膠基板具有與該載體基板面積相同之面積。
- 如申請專利範圍第1項所述之製備方法,更包括:於步驟4)之後封裝該有機發光裝置。
- 如申請專利範圍第1項所述之製備方法,其中,步驟5)之分離該載體基板之方法使用一刀具或一雷射。
- 一種可撓式有機發光裝置,其係藉由如申請專利範圍第1至13項任一項所述之可撓式有機發光裝置製造方法製造。
- 如申請專利範圍第14項所述之可撓式有機發光裝置,更包括:一光萃取層,係設於該塑膠基板及該有機發光裝置之間。
- 如申請專利範圍第15項所述之可撓式有機發光裝置,更包括:一平坦層,係設於該光萃取層上。
- 一種顯示裝置,包括如申請專利範圍第14至16項任一項所述之可撓式有機發光裝置。
- 一種照明裝置,包括如申請專利範圍第14至16項任一項所述之可撓式有機發光裝置。
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KR101661619B1 (ko) | 2014-11-05 | 2016-09-30 | 율촌화학 주식회사 | 가스 발생 점착 필름, 이를 포함하는 연성 표시소자 및 이를 이용한 연성 표시소자 제조 방법 |
KR20160064747A (ko) * | 2014-11-28 | 2016-06-08 | 동우 화인켐 주식회사 | 액정 표시 패널 상판 일체형 터치 센서 |
CN105789440A (zh) * | 2014-12-23 | 2016-07-20 | 深圳Tcl工业研究院有限公司 | 用于制造柔性显示的复合基板及制备方法和amoled的制造方法 |
TWI542923B (zh) * | 2015-03-09 | 2016-07-21 | 友達光電股份有限公司 | 可撓式顯示面板及其製作方法 |
JP6735554B2 (ja) * | 2015-12-10 | 2020-08-05 | エルジー ディスプレイ カンパニー リミテッド | フレキシブル有機el表示装置及びその製造方法 |
US10586817B2 (en) | 2016-03-24 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and separation apparatus |
US10003023B2 (en) | 2016-04-15 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US10185190B2 (en) | 2016-05-11 | 2019-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device, module, and electronic device |
KR20230106750A (ko) | 2016-07-29 | 2023-07-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기 |
TWI753868B (zh) | 2016-08-05 | 2022-02-01 | 日商半導體能源研究所股份有限公司 | 剝離方法、顯示裝置、顯示模組及電子裝置 |
TWI629770B (zh) * | 2016-08-09 | 2018-07-11 | 陽程科技股份有限公司 | Method for separating flexible display from carrier substrate |
TW201808628A (zh) | 2016-08-09 | 2018-03-16 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
TWI730017B (zh) | 2016-08-09 | 2021-06-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置 |
US10923350B2 (en) | 2016-08-31 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
CN109564851A (zh) | 2016-08-31 | 2019-04-02 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
US10369664B2 (en) | 2016-09-23 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
KR102630960B1 (ko) * | 2016-12-15 | 2024-01-29 | 엘지디스플레이 주식회사 | 플렉서블 기판과 이를 포함하는 플렉서블 표시장치 및 그 제조 방법 |
JP6878870B2 (ja) * | 2016-12-20 | 2021-06-02 | 東洋紡株式会社 | 積層体、積層体の製造方法およびフレキシブルデバイスの製造方法 |
KR102008766B1 (ko) * | 2017-01-31 | 2019-08-09 | 주식회사 엘지화학 | 가요성 기판 제조용 적층체 및 이를 이용한 가요성 기판의 제조방법 |
CN107195658B (zh) * | 2017-05-25 | 2020-01-21 | 上海天马微电子有限公司 | 柔性基板及其制作方法 |
US10658592B2 (en) | 2017-07-31 | 2020-05-19 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for fabricating flexible display device, flexible display device, and display apparatus |
CN107464893A (zh) * | 2017-07-31 | 2017-12-12 | 武汉华星光电半导体显示技术有限公司 | 柔性显示器件的制备方法、柔性显示器件及显示器 |
WO2019049235A1 (ja) * | 2017-09-06 | 2019-03-14 | シャープ株式会社 | 表示デバイスの製造方法及び表示デバイスの製造装置 |
KR102288303B1 (ko) | 2018-09-11 | 2021-08-10 | 주식회사 엘지화학 | 플렉서블 디스플레이 제조용 적층체 및 이를 이용한 플렉서블 디스플레이 제조 방법 |
KR102696647B1 (ko) * | 2018-11-09 | 2024-08-22 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 및 그 제조 방법 |
CN110132315A (zh) * | 2019-04-08 | 2019-08-16 | 清华大学深圳研究生院 | 一种柔性传感器及其制备方法和可穿戴智能设备 |
CN110739337B (zh) * | 2019-10-24 | 2022-06-17 | 云谷(固安)科技有限公司 | 柔性基板、显示面板及显示面板的制备方法 |
CN111755632B (zh) * | 2020-07-30 | 2022-07-19 | 河南工程学院 | 一种柔性有机电致发光器件及其制备方法 |
US20240128304A1 (en) * | 2021-02-25 | 2024-04-18 | Dongwoo Fine-Chem Co., Ltd. | Led lighting device and method for manufacturing the same |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6962726B2 (en) * | 2000-06-16 | 2005-11-08 | Unitika Ltd. | Method for preparing substrate for flexible print wiring board, and substrate for flexible print wiring board |
JP2002198374A (ja) * | 2000-10-16 | 2002-07-12 | Sharp Corp | 半導体装置およびその製造方法 |
US8057903B2 (en) | 2001-11-30 | 2011-11-15 | Sabic Innovative Plastics Ip B.V. | Multilayer articles comprising resorcinol arylate polyester and method for making thereof |
US20060043343A1 (en) * | 2004-08-24 | 2006-03-02 | Chacko Antony P | Polymer composition and film having positive temperature coefficient |
DE102006055067B4 (de) * | 2005-12-29 | 2017-04-20 | Lg Display Co., Ltd. | Organische Dünnfilmtransistoren und Verfahren zu deren Herstellung |
KR100820170B1 (ko) * | 2006-08-30 | 2008-04-10 | 한국전자통신연구원 | 플렉시블 기판의 적층 방법 |
KR101330456B1 (ko) * | 2006-12-12 | 2013-11-15 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이의 제조 장치 및 이를 이용한 플렉서블디스플레이의 제조 방법 |
JP5150138B2 (ja) * | 2007-05-23 | 2013-02-20 | 株式会社ジャパンディスプレイイースト | 表示装置の製造方法 |
US7674689B2 (en) * | 2007-09-20 | 2010-03-09 | Infineon Technologies Ag | Method of making an integrated circuit including singulating a semiconductor wafer |
CN101960382B (zh) * | 2008-03-07 | 2014-01-01 | 株式会社Lg化学 | 正性光敏聚酰亚胺组合物 |
EP2278852A4 (en) | 2008-03-18 | 2011-08-03 | Asahi Glass Co Ltd | ELECTRONIC DEVICE SUBSTRATE, LAYERED BODY FOR ORGANIC ELECTROLUMINESCENT DIODE ELEMENT, MANUFACTURING METHOD THEREOF, ORGANIC ELECTROLUMINESCENT DIODE ELEMENT, AND MANUFACTURING METHOD THEREOF |
KR101500684B1 (ko) * | 2008-04-17 | 2015-03-10 | 삼성디스플레이 주식회사 | 캐리어 기판 및 이를 이용한 가요성 표시 장치의 제조 방법 |
JP2009283155A (ja) | 2008-05-19 | 2009-12-03 | Seiko Epson Corp | 表示装置の製造方法、表示装置および電子機器 |
TWI354854B (en) | 2008-09-15 | 2011-12-21 | Ind Tech Res Inst | Substrate structures applied in flexible electrica |
KR101009415B1 (ko) | 2008-11-18 | 2011-01-19 | 삼성모바일디스플레이주식회사 | 플라스틱 기판을 구비한 전자장치 제조방법, 이에 의해 제조된 전자장치 및 상기 제조방법에 사용되는 장치 |
EP2366270A4 (en) * | 2008-12-02 | 2013-04-10 | Univ Arizona | PROCESS FOR PREPARING A SOFT SUBSTRATE AND SOFT SUBSTRATE THUS OBTAINED |
US8273439B2 (en) * | 2008-12-08 | 2012-09-25 | Industrial Technology Research Institute | Release layer materials, substrate structures comprising the same and fabrication method thereof |
KR101319090B1 (ko) * | 2008-12-19 | 2013-10-17 | 도요보 가부시키가이샤 | 적층체 및 적층체 회로판 |
KR101029299B1 (ko) * | 2008-12-30 | 2011-04-18 | 서울대학교산학협력단 | 유기 발광 소자 및 그 제조 방법 |
KR101740947B1 (ko) * | 2009-02-13 | 2017-05-29 | 가코호진 도쿄 코게이 다이가쿠 | 화상표시장치 및 유기 일렉트로루미네센스 소자 |
TWI421809B (zh) * | 2009-04-17 | 2014-01-01 | Ind Tech Res Inst | 可撓曲基板自載板上脫離的方法及可撓式電子裝置的製造方法 |
TWI439976B (zh) | 2009-04-17 | 2014-06-01 | Ind Tech Res Inst | 可撓曲膜自載板上脫離的方法及可撓式電子裝置的製造方法 |
CN101944477B (zh) * | 2009-07-03 | 2012-06-20 | 清华大学 | 柔性半导体器件的制造方法 |
KR101723254B1 (ko) * | 2009-09-08 | 2017-04-04 | 도요보 가부시키가이샤 | 유리/수지 적층체 및 그것을 사용한 전자 디바이스 |
KR20120098611A (ko) * | 2009-10-15 | 2012-09-05 | 아사히 가라스 가부시키가이샤 | 유기 led 소자, 유기 led 소자의 산란층용의 유리 프릿 및 유기 led 소자의 산란층의 제조 방법 |
JP2011142168A (ja) | 2010-01-06 | 2011-07-21 | Fujifilm Corp | 電子デバイスの製造方法および該電子デバイスに用いられる基板 |
US8538224B2 (en) | 2010-04-22 | 2013-09-17 | 3M Innovative Properties Company | OLED light extraction films having internal nanostructures and external microstructures |
KR101145724B1 (ko) | 2010-05-04 | 2012-05-16 | 부산대학교 산학협력단 | 외부 광 추출 효율을 향상시킨 유기 발광 소자 및 그 제조방법 |
US20110291544A1 (en) * | 2010-05-31 | 2011-12-01 | Industrial Technology Research Institute | Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof |
KR101783781B1 (ko) * | 2010-07-05 | 2017-10-11 | 삼성디스플레이 주식회사 | 평판 표시 장치 및 그 제조방법 |
KR101845440B1 (ko) | 2010-11-18 | 2018-04-04 | 엘지디스플레이 주식회사 | 플렉서블 표시장치의 제조 방법 |
TW201228807A (en) * | 2011-01-13 | 2012-07-16 | Moser Baer India Ltd | Method of imprinting a texture on a rigid substrate using flexible stamp |
JP2012178268A (ja) | 2011-02-25 | 2012-09-13 | Mitsubishi Chemicals Corp | 有機電界発光素子、有機電界発光モジュール、有機電界発光表示装置、及び有機電界発光照明 |
KR101918284B1 (ko) * | 2011-03-03 | 2019-01-30 | 엘지디스플레이 주식회사 | 플렉시블 표시장치의 제조 방법 |
JP5355618B2 (ja) * | 2011-03-10 | 2013-11-27 | 三星ディスプレイ株式會社 | 可撓性表示装置及びこの製造方法 |
TWI445626B (zh) | 2011-03-18 | 2014-07-21 | Eternal Chemical Co Ltd | 製造軟性元件的方法 |
JP5906574B2 (ja) | 2011-03-29 | 2016-04-20 | 大日本印刷株式会社 | フレキシブルデバイス用基板及びその製造方法 |
JP5224011B2 (ja) * | 2011-04-15 | 2013-07-03 | 東洋紡株式会社 | 積層体とその製造方法及びそれを用いたデバイス構造体の製造方法 |
US20130115426A1 (en) * | 2011-11-09 | 2013-05-09 | Au Optronics Corporation | Method of manufacturing flexible electronic device |
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