TWI469402B - Light-emitting diode package structure - Google Patents

Description

Light emitting diode package structure

The present invention relates to a light emitting diode package structure, and more particularly to a light emitting diode package structure having high heat conduction efficiency.

In recent years, due to the increasing luminous efficiency of light-emitting diodes, light-emitting diodes have gradually replaced fluorescent lamps and incandescent light bulbs in certain fields, such as scanner light sources requiring high-speed response, backlights for liquid crystal displays, or front light source vehicles. Dashboard lighting, traffic lights, and general lighting. The principle of the light-emitting diode is to convert electric energy into light, that is, to apply current to the light-emitting diode, and to release the light through the combination of electrons and holes, thereby achieving the effect of light emission.

1 is a cross-sectional view showing a conventional light emitting diode package structure. Referring to FIG. 1 , a conventional LED package structure 100 is composed of a light emitting diode chip 110 , a carrier substrate 120 , a wire 132 , a wire 134 , and an encapsulant 140 . The LEDs 110 are disposed on the carrier substrate 120, and the wires 132 and 134 are electrically connected between the LEDs 110 and the carrier substrate 120, respectively. The encapsulant 140 is disposed on the carrier substrate 120 and covers the wires 132 and 134. The LED chip 110 is mainly transmitted through the pair of wires 132 and 134. A voltage difference is applied to cause the active layer 112 of the LED chip 110 to emit light, and the active layer 112 also generates heat. If the active layer 112 of the LED chip 110 emits light, the heat generated cannot be effectively discharged, especially at a high level. When the current is driven down, the LED chip 110 is often easily damaged by overheating.

The invention provides a light emitting diode package structure, in particular to a package heat dissipation structure of a light emitting diode, to improve the overall heat conduction efficiency of the package.

The invention provides a light emitting diode package structure comprising a carrier substrate, at least one light emitting diode chip, an optical component, a high heat conductive transparent liquid, a fixing component and a sealing component. The light emitting diode chip is disposed on the carrier substrate and has an active layer. The optical component is disposed on the carrier substrate, and a closed space is formed between the optical component and the carrier substrate, and the LED chip is located in the enclosed space. The high thermal conductivity light-transmissive liquid fills up in the enclosed space. The fixing component is directly disposed on the carrier substrate, the sealing component is located outside the closed space and the fixing component, and the sealing component is connected to the outer edge of the optical component and the carrier substrate is not directly contacted by the fixing component located therebetween The carrier substrate.

The invention provides a light emitting diode package structure comprising a carrier substrate, at least one light emitting diode chip, an optical component, a high heat conductive transparent liquid, a connecting layer and a sealing component. The light emitting diode chip is disposed on the carrier substrate and has an active layer. The optical component is disposed on the carrier substrate, and a closed space is formed between the optical component and the carrier substrate, and the LED chip is located in the enclosed space. High thermal conductivity The light-transmissive liquid fills up in the enclosed space. The connecting layer is directly disposed on the carrier substrate, and the connecting layer is made of a metal or an alloy. The sealing element is located outside the closed space and the connecting layer, and the sealing element connects the outer edge of the optical element and the supporting substrate through the connecting layer therebetween without directly contacting the carrying substrate.

Based on the above, the high thermal conductive transparent liquid of the present invention fills the enclosed space, so that the light emitting diode wafer can not only improve the heat conduction efficiency of the bottom portion thereof by the carrier substrate, but also enhance the sidewall thereof by the high heat conductive transparent liquid. Thermal efficiency with the top surface.

The above described features and advantages of the present invention will be more apparent from the following description.

100, 200, 400, 500‧‧‧Light emitting diode package structure

110, 220‧‧‧Light Emitter Wafer

112‧‧‧ active layer

114, 222‧‧‧ bottom

116, 224‧‧‧ side wall

118, 226‧‧‧ top

120, 210‧‧‧ carrier substrate

132, 134, C‧‧‧ wires

140‧‧‧Package colloid

212‧‧‧ surface

230‧‧‧Optical components

232‧‧‧ Groove

232a‧‧‧open end

234‧‧‧ outer edge

240‧‧‧High thermal conductivity light-transmitting liquid

242‧‧‧suspensed particles

250‧‧‧ sealing element

252‧‧‧Second top

260‧‧‧Connection layer

270‧‧‧Fixed components

280, F‧‧‧ adhesive layer

290‧‧‧reflective layer

410, 516‧‧ ‧ raised parts

510‧‧‧High Steps

512‧‧‧ first top surface

514‧‧‧ bottom

A‧‧‧ inner wall

D‧‧‧Deep

E1, E2‧‧‧ electrodes

G‧‧‧ gap

H1, H2‧‧‧ distance

OP‧‧‧ openings

P‧‧‧ pads

S‧‧‧closed space

T‧‧‧ trench

W1, W2, W3, W4‧‧‧ width

1 is a cross-sectional view showing a conventional light emitting diode package structure.

2 is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention.

FIG. 3 illustrates a variation of the LED package structure of FIG.

4A is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention.

FIG. 4B illustrates a variation of the LED package structure of FIG. 4A.

FIG. 5 is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention.

6A and 6B illustrate two variations of the LED package structure of FIG. 5.

2 is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention. Referring to FIG. 2 , the LED package structure 200 includes a carrier substrate 210 , a light emitting diode chip 220 , an optical component 230 , and a highly thermally conductive light transmissive liquid 240 .

The carrier substrate 210 is, for example, a highly thermally conductive substrate, wherein the highly thermally conductive substrate is, for example, a substrate having good thermal conductivity such as an alumina substrate (Al ₂ O ₃ ), an aluminum nitride substrate (AlN), a copper substrate, or an aluminum substrate. In the present embodiment, the thermal conductivity of the highly thermally conductive substrate is, for example, greater than 25 W/mK. The LED substrate 220 is disposed on the carrier substrate 210 and has an active layer (not shown). In this embodiment, when a specific color light (such as white light) is generated, a light conversion layer (not shown) may be selectively formed on the light outgoing path of the LED array 220. In detail, the light conversion layer may directly cover the surface of the light emitting diode wafer 220 to increase light uniformity, and the light conversion layer may also be indirectly attached to the surface of the light emitting diode wafer. In addition, in order to improve the heat dissipation efficiency of the carrier substrate 210, a heat sink (not shown) may be disposed on a surface 212 of the carrier substrate 210 away from the LED array 220.

The optical component 230 is disposed on the carrier substrate 210. A closed space S is formed between the optical component 230 and the carrier substrate 210, and the LED array 220 is disposed in the enclosed space S. Specifically, in the embodiment, the optical component 230 is a curved optical component, the optical component 230 has a recess 232, and the carrier substrate 210 is disposed on an open end 232a of the recess 232 to seal the recess 232. And form a closed space S. The material of the optical element 230 is, for example, a material having good light transmission properties such as glass, and optical. Element 230 is, for example, a lens. In the present embodiment, the optical element 230 is transparent with respect to the wavelength of (partial or total) light emitted by the LED wafer 220, for example, the optical element 230 is wearable with respect to the wavelength of visible light. Translucent.

The material of the optical component 230 is, for example, glass, epoxy resin or transparent plastic, wherein the transparent plastic is an olefinic transparent plastic or an aliphatic transparent plastic such as polypropylene or polyethylene, and the transparent The plastic does not deteriorate when it comes into contact with an aprotic solvent such as a solution containing propylene carbonate. The transparent plastic is, for example, a cyclic olefin copolymer, a polymethylpentenes, a hydrogenated cyclo-olefin polymers or an amorphous cyclo-olefin copolymers. ).

The highly thermally conductive light-transmissive liquid 240 is filled in the closed space S, which is a liquid having high thermal conductivity and fluidity. In the present embodiment, the thermal conductivity of the highly thermally conductive light-transmitting liquid 240 is greater than the thermal conductivity of the epoxy, and is high when compared to the light of the dominant wavelength emitted by the LED wafer 220. The light transmittance of the heat conductive light-transmitting liquid 240 is greater than 80%. Therefore, the highly thermally conductive light-transmitting liquid 240 can directly contact the entire surface of the carrier substrate 210, the optical element 230, and the light-emitting diode wafer 220 exposed to the enclosed space S. In this way, the heat generated by the light-emitting diode wafer 220 during light emission can be transmitted to the carrier substrate 210 and the optical component 230 by the flow of the high thermal conductive transparent liquid 240, and transmitted to the light emitting device via the carrier substrate 210 and the optical component 230. The diode package structure 200 is external. It should be noted that in this embodiment, the LED chip 220 can be carried not only by the carrier The substrate 210 enhances the heat transfer efficiency of the bottom surface 222 thereof, and the heat conduction efficiency of the sidewall 224 and the top surface 226 can also be improved by the high heat conductive transparent liquid 240.

In the embodiment, in order to prevent the high thermal conductive transparent liquid 240 from electrically short-circuiting between the two electrodes E1 and E2 of the LED array 220, the high thermal conductive transparent liquid 240 is, for example, a non-conductive liquid. The material of the high heat conductive transparent liquid 240 is selected from one of silicon oils, paraffin oils, olive oils, propylene carbonate, perfluoropolyether liquid or the like. A liquid with high thermal conductivity and fluidity. It should be noted that when the highly thermally conductive light-transmitting liquid 240 is electrically conductive, it can be electrically connected to the conductive portion of the LED substrate 220 (for example, the pad P) and the light-emitting diode wafer 220 (for example, The wire C) and a portion of the active layer of the sidewall of the LED chip 220 form an insulating layer (the material thereof is, for example, an insulating material), and the insulating layer can block the high heat conductive transparent liquid 240 to avoid the high thermal conductive liquid 240. The short circuit, for example, the light-emitting diode wafer 220 is wrapped with a light conversion layer to form an insulating layer.

In the present embodiment, the highly thermally conductive light transmissive liquid 240 may be doped with a plurality of suspended particles 242. For example, the highly thermally conductive light transmissive liquid 240 is, for example, deionized water doped with titanium dioxide particles. Since the suspended particles 242 can increase the refraction and reflection of the light emitted by the LED array 220, the light-emitting angle can be effectively increased to avoid the discomfort caused by the direct injection of light into the human eye.

The highly thermally conductive light-transmitting liquid 240 is a liquid having fluidity at room temperature, and has a viscosity coefficient of, for example, less than 10,000 mPas. In the embodiment, in order to prevent the high heat conductive transparent liquid 240 from being frozen at a low temperature, the high heat conductive transparent liquid 240 may be added. An antifreeze material to maintain its fluidity, antifreeze materials such as methanol or ethylene glycol.

Additionally, the light emitting diode package structure 200 can optionally have a sealing element 250. The sealing member 250 is connected to the outer edge 234 of the optical component 230 and the carrier substrate 210, and is located outside the closed space S. The material of the sealing component 250 is, for example, a metal or an alloy, wherein the alloy is, for example, an iron cobalt nickel alloy (commercial name is Kovar alloy). . The manner in which the sealing member 250 is connected to the carrier substrate 210 is, for example, metal to metal interconnection, so that the sealing member 250 is connected to the carrier substrate 210 with good reliability.

In the present embodiment, the following three methods of connecting the optical element 230 and the sealing member 250 are listed, but are not intended to limit the present invention. Method 1 is to heat the optical element 230 to its glass transition temperature or softening temperature, and then enclose the sealing element 250 on the outer edge 234 of the optical element 230. The method 2 is to first metallize the outer edge 234 of the optical component 230 (e.g., metallization, such as titanium), and then use the solder (not shown) to follow the optical component 230 and the sealing component 250. Method 3 utilizes a sealant (not shown) followed by optical element 230 and sealing element 250, the sealant having properties close to that of glass and having a lower softening temperature (e.g., below 700 ° C).

In the present embodiment, the following two methods of connecting the carrier substrate 210 and the sealing member 250 are listed, but are not intended to limit the present invention. The method 1 uses a connection layer 260 to connect the sealing member 250 to the carrier substrate 210. The connection layer 260 is located between the sealing member 250 and the carrier substrate 210, and is made of a metal or an alloy such as solder. The shape of the connecting layer 260 can be designed to be circular, quadrangular, elliptical or the like according to the cross-sectional shape of the sealing member 250, and the connecting layer 260 can improve the adhesion between the sealing member 250 and the carrier substrate 210, thereby improving the overall reliability of the package. degree. Specifically, a solder may be formed on the carrier substrate 210, and then the sealing member 250 that has been connected to the optical element 230 is placed on the solder and the solder is heated.

FIG. 3 illustrates a variation of the LED package structure of FIG. Referring to FIG. 3 , the method 2 first forms a fixing component 270 fixed on the carrier substrate 210 on the carrier substrate 210 . The fixing component 270 is fixed on the carrier substrate 210 by, for example, bonding to the carrier substrate 210 through a solder (not shown), adhering to the carrier substrate 210 through a glue (not shown), or through the fixing component 270 and the ceramic. The method of co-sintering the powder is followed by, or the fixing assembly 270 is integrally formed with the carrier substrate 210. Then, the sealing member 250 that has been connected to the optical element 230 is disposed on the fixing assembly 270. Thereafter, the portion of the sealing member 250 that is in contact with the fixing member 270 is heated in a manner such as a point discharge or a laser welding. The material of the fixing component 270 may be the same material as the sealing component 250, such as iron cobalt nickel alloy or Invar non-expanding steel.

4A is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention, and FIG. 4B is a variation of the light emitting diode package structure of FIG. 4A. Referring to FIG. 4A , the LED package structure 400 of the present embodiment includes a carrier substrate 210 , a protrusion 410 , a LED chip 220 , an optical component 230 , and a high thermal conductive liquid 240 . In addition, the LED package structure 400 can optionally have a sealing member 250.

It should be noted that the LED package structure 400 is similar to the LED package structure 200 of FIG. 2 except that the LED package 400 additionally has a protrusion 410. Therefore, the following only takes the difference between the two Detailed introduction, and the similarities between the two will not be repeated.

The protrusion 410 is disposed on the carrier substrate 210 and has an opening OP to expose the carrier substrate 210. The material of the protrusion 410 is a heat conductive material, and the heat conductive material may be metal or metal alloy, such as gold, silver, copper, indium, titanium, zinc, aluminum, lead, tin, nickel, platinum, chromium, or have A composite material of good thermal conductivity, such as ceramic.

The LED wafer 220 is disposed on the carrier substrate 210 and located in the opening OP. The convex portion 410 and the light emitting diode wafer 220 are both located in the closed space S formed by the optical element 230 and the carrier substrate 210, and the high heat conductive transparent liquid 240 can directly contact the carrier substrate 210, the optical element 230, and the light emitting diode. The body wafer 220 and the raised portion 410 are exposed to all surfaces in the enclosed space S.

In other embodiments, if a specific color light is to be generated, the depth D of the opening OP may be increased (ie, the thickness of the convex portion 410 is increased) such that the depth D of the opening OP is greater than the height of the light-emitting diode wafer 220 (that is, The top surface of the light-emitting diode wafer 220 is lower than the top surface of the convex portion 410, and the phosphor is filled in the opening OP.

The ratio of the width W1 of the opening OP section to the width W2 of the cross section of the LED array 220 is 1 to 1.5. It should be noted that, in this embodiment, the width W1 of the opening OP section and the width W2 of the cross section of the LED array 220 refer to the (minimum) width W1 of the opening OP and the LED array 220 in the same cross section. (maximum) width W2.

As can be seen from the foregoing, the convex portion 410 is adjacent to the sidewall 224 of the LED wafer 220. Therefore, the sidewall of the LED wafer 220 can be increased by the protrusion 410. Thermal conductivity of 224.

4A illustrates that the ratio of the width W1 of the opening OP section of the boss portion 410 to the width W2 of the cross section of the LED array 220 is greater than 1 and less than or equal to 1.5, in other words, the sidewall 224 of the LED substrate 220 is convex and convex. A gap G may exist between the starting portions 410, and an adhesive layer F may be filled in the gap G. The material of the adhesive layer F is, for example, silver paste, solder, glass, and alloy or other suitable heat conductive material. In addition, when the ratio of the width of the cross section of the opening OP to the width of the cross section of the LED array 220 is greater than 1 and less than or equal to 1.5, the convex portion 410 and the carrier substrate 210 are integrally formed, for example, or formed separately. In other words, the raised portion 410 and the carrier substrate 210 may be formed at the same time, or the protrusions 410 may be assembled onto the carrier substrate 210 after being formed separately. When the protrusion 410 and the carrier substrate 210 are respectively formed, the material of the protrusion 410 is, for example, the same as the carrier substrate 210, or is a material having a thermal conductivity different from that of the carrier substrate 210. Or it is the same material as the material portion of the carrier substrate 210.

In addition, referring to FIG. 4B , in the embodiment, an adhesive layer 280 may be disposed in the gap G and between the LED wafer 220 and the carrier substrate 210 to bond the LED wafer 220 to the carrier substrate 210 and Raised portion 410. The material of the adhesive layer 280 is, for example, silver paste, solder, glass, and alloy or other suitable heat conductive material. Therefore, the adhesive layer 280 can help improve the heat conduction efficiency of the light emitting diode wafer 220.

As can be seen from the foregoing, in the present embodiment, the LED wafer 220 can conduct heat (generated by the LED film 220 when it is illuminated) to the lower carrier. The plate 210 is in contact with the high heat conductive transparent liquid 240 by the convex portion 410, and the heat is transmitted to the light emitting diode package 400 via the carrier substrate 210 and the high heat conductive transparent liquid 240 to enhance the light emitting diode. The heat transfer efficiency of the wafer 220.

In addition, in the embodiment, a reflective layer 290 can be formed on the inner wall A of the opening OP and the portion of the carrier substrate 210 exposed by the opening OP to reflect the light generated by the LED chip 220 and thereby improve For the utilization of light, the material of the reflective layer 290 is, for example, silver or other material suitable for reflecting light. In other embodiments not shown, when the width ratio of the cross section of the LED wafer 220 is 1, the sidewall 224 of the LED wafer 220 is attached to the boss 410.

FIG. 5 is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention. 6A and 6B illustrate two variations of the LED package structure of FIG. 5.

Referring to FIG. 5 , the LED package structure 500 of the present embodiment includes a carrier substrate 210 , a padding portion 510 , a light emitting diode chip 220 , an optical component 230 , and a high thermal conductive transparent liquid 240 . In addition, the LED package structure 500 can optionally have a sealing member 250 and a fixing component (not shown).

It should be noted that the LED package structure 500 is similar to the LED package structure 200 of FIG. 2 except that the LED package structure 500 additionally has a pad portion 510. Therefore, the following only describes the differences between the two, and the similarities between the two are not repeated here.

The padding portion 510 is disposed on the carrier substrate 210 and has a plurality of trenches T and a first top surface 512 away from the carrier substrate 210. The material of the padding portion 510 is a heat conductive material. The LED chip 220 is disposed on the first top surface of the pad portion 510 The upper portion 510 and the light-emitting diode wafer 220 are both located in the closed space S. The high heat conductive transparent liquid 240 can directly contact the entire surface of the bearing substrate 210, the optical element 230, the light emitting diode wafer 220 and the elevated portion 510 exposed to the closed space S, and the high heat conductive transparent liquid 240 can be filled up. In the trench T.

Since the trench T can increase the contact area of the pad portion 510 with the high heat conductive transparent liquid 240, when the heat generated by the LED chip 220 is conducted to the pad portion 510, the high heat conductive transparent liquid 240 can be used. The flow removes heat conducted to the pad portion 510, thereby increasing the heat transfer efficiency of the pad portion 510.

The sealing element 250 has a second top surface 252 away from the carrier substrate 210. The distance H1 between the first top surface 512 of the pad portion 510 and the carrier substrate 210 is greater than or equal to the second top surface 252 of the sealing member 250 and the carrier substrate 210. The distance between H2. In this way, the light-emitting diode wafer 220 can be raised by the padding portion 510 to prevent the light emitted by the light-emitting diode chip 220 from being blocked by the sealing member 250, thereby improving the light-emitting efficiency of the light-emitting diode package structure 500. (light extraction efficiency).

Referring to FIG. 6A, in the embodiment, the height portion 510 includes a bottom portion 514 and a convex portion 516. The convex portion 516 is located on the bottom portion 514, and the convex portion 516 has an opening OP to expose the bottom portion 514. The LED wafer 220 is disposed on the bottom 514 and is located in the opening OP. The ratio of the width W3 of the opening OP section to the width W4 of the cross section of the LED array 220 is, for example, 1 to 1.5. It should be noted that since the protrusion 516 is adjacent to the sidewall 224 of the LED wafer 220, the heat transfer efficiency of the sidewall 224 of the LED wafer 220 can be increased by the protrusion 516.

FIG. 6A illustrates the width W3 of the opening OP section and the light emitting diode chip The width W4 ratio of the 220 section is greater than 1 and less than or equal to 1.5. In other words, there is a gap G between the LED wafer 220 and the protrusion 516, and an adhesive layer F can be filled in the gap G. The material of the adhesion layer F is, for example, silver paste, solder, glass, and alloy. Other suitable thermal materials. At this time, the heat transfer efficiency of the sidewall 224 of the LED array 220 can be improved by the contact of the protrusion 516 with the highly thermally conductive transparent liquid 240. The bottom portion 514 and the boss portion 516 are, for example, integrally formed.

In addition, referring to FIG. 6B, in the embodiment, an adhesive layer 280 may be disposed in the gap G and between the LED wafer 220 and the bottom portion 514 to bond the LED wafer 220 to the bottom portion 514 and the protrusion. Part 516. The material of the adhesive layer 280 is, for example, silver paste, solder, glass, and alloy or other suitable heat conductive material. Therefore, the adhesive layer 280 can help improve the heat conduction efficiency of the light emitting diode wafer 220.

In addition, in the embodiment, a reflective layer 290 may be formed on the inner wall A of the opening OP and the portion of the bottom portion 514 exposed by the opening OP to reflect the light generated by the light-emitting diode wafer 220 to improve the light. The utilization of the reflective layer 290 is, for example, silver or other material suitable for reflecting light.

In other embodiments not shown, the width W3 of the cross section of the opening OP and the width W4 of the cross section of the LED array 220 may be 1, in other words, the LED wafer 220 is bonded to the convex portion 516. At this time, the protrusion 516 can directly conduct the heat generated by the LED wafer 220 during the light emission to the carrier substrate 210, and is conducted to the outside of the LED package structure via the carrier substrate 210 to enhance the LED chip. The thermal conductivity of the sidewall 224 of 220.

In summary, the high thermal conductive transparent liquid of the present invention fills the enclosed space Therefore, the highly thermally conductive light-transmitting liquid can directly contact the entire surface of the carrier substrate, the optical element, and the light-emitting diode wafer exposed to the enclosed space. In this way, the light-emitting diode wafer can not only improve the heat conduction efficiency of the bottom portion thereof by the carrier substrate, but also improve the heat conduction efficiency of the sidewall and the top surface by the high heat conductive light-transmitting liquid. The invention uses a sealing element to connect the optical element to the carrier substrate to secure the optical component to the carrier substrate. In addition, the present invention utilizes the raised portions of the sidewalls of the light-emitting diode wafer to increase the heat transfer efficiency of the sidewalls of the light-emitting diode wafer. In addition, the height portion of the present invention can raise the light-emitting diode wafer to prevent the light emitted by the light-emitting diode wafer from being blocked by the sealing member, thereby improving the light-emitting efficiency of the light-emitting diode package structure.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

200‧‧‧Light emitting diode package structure

210‧‧‧bearing substrate

212‧‧‧ surface

220‧‧‧Light Diode Wafer

222‧‧‧ bottom

224‧‧‧ side wall

226‧‧‧ top surface

230‧‧‧Optical components

232‧‧‧ Groove

232a‧‧‧open end

234‧‧‧ outer edge

240‧‧‧High thermal conductivity light-transmitting liquid

242‧‧‧suspensed particles

250‧‧‧ sealing element

260‧‧‧Connection layer

C‧‧‧Wire

E1, E2‧‧‧ electrodes

P‧‧‧ pads

S‧‧‧closed space

Claims (12)

A light emitting diode package structure includes: a carrier substrate; at least one light emitting diode chip disposed on the carrier substrate and having an active layer; an optical component disposed on the carrier substrate, the optical component and Forming a closed space between the carrier substrates, and the light emitting diode chip is located in the closed space; a high heat conductive transparent liquid is filled in the closed space; a fixing component, the fixing component is directly disposed on the bearing And a sealing member located outside the enclosed space and the fixing component, and the sealing element connecting the outer edge of the optical component and the carrier substrate through the fixing component therebetween without directly contacting the carrier substrate . The light emitting diode package structure of claim 1, wherein the high heat conductive light transmissive liquid contains at least one antifreeze material. The light emitting diode package structure according to claim 1, wherein the high heat conductive transparent liquid is doped with a plurality of suspended particles. The light emitting diode package structure of claim 1, wherein the high heat conductive transparent liquid is a non-conductive liquid. The light emitting diode package structure of claim 1, wherein the high thermal conductivity transparent liquid has a thermal conductivity greater than a thermal conductivity of the epoxy resin. The light emitting diode package structure of claim 1, further comprising a light conversion layer, wherein the light conversion layer is located at a light exiting path of the light emitting diode chip on. A light emitting diode package structure includes: a carrier substrate; at least one light emitting diode chip disposed on the carrier substrate and having an active layer; an optical component disposed on the carrier substrate, the optical component and Forming a closed space between the carrier substrates, and the light emitting diode chip is located in the closed space; a high heat conductive transparent liquid is filled in the closed space; and a connecting layer is directly disposed on the carrying layer On the substrate, the connecting layer is made of a metal or an alloy; and a sealing member is disposed outside the closed space and the connecting layer, and the sealing member is connected to the outer edge of the optical element and is transparent to the carrying substrate. The connecting layer therebetween does not directly contact the carrier substrate. The light emitting diode package structure according to claim 7, wherein the high heat conductive light transmissive liquid contains at least one antifreeze material. The light emitting diode package structure according to claim 7, wherein the high heat conductive transparent liquid is doped with a plurality of suspended particles. The light emitting diode package structure of claim 7, wherein the high heat conductive transparent liquid is a non-conductive liquid. The light emitting diode package structure according to claim 7, wherein the high thermal conductivity transparent liquid has a thermal conductivity greater than a thermal conductivity of the epoxy resin. The light-emitting diode package structure as described in claim 7 of the patent application, A light conversion layer is disposed on the light exit path of the light emitting diode chip.