TWI384592B - Filmy adhesive for fixing semiconductor element, semeconductor device using the same and manufacturing method of semiconductor device - Google Patents

Filmy adhesive for fixing semiconductor element, semeconductor device using the same and manufacturing method of semiconductor device Download PDF

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TWI384592B
TWI384592B TW095130217A TW95130217A TWI384592B TW I384592 B TWI384592 B TW I384592B TW 095130217 A TW095130217 A TW 095130217A TW 95130217 A TW95130217 A TW 95130217A TW I384592 B TWI384592 B TW I384592B
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adhesive
semiconductor element
film
fixing
substrate
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TW095130217A
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TW200711073A (en
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Takeshi Aoyama
Masaru Anzai
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Nippon Steel Chemical Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)

Abstract

A film like adhesive for attaching a semiconductor element, a semiconductor device using the same, and a method for manufacturing the semiconductor device are provided to prevent the generation of voids enough and to attach effectively the semiconductor element onto a substrate with a convexo-concave portion by using a relatively large thickness of the film like adhesive itself compared to that of an electronic part. A film like adhesive(10) for attaching a semiconductor element is composed of a plurality of adhesive films(20) stacked with each other. The adhesive film is made of a predetermined material with a melting viscosity of 50 PaÀs or less at a temperature of 140 ‹C. The thickness of the film like adhesive is in a range of 200 to 2000 micro meters.

Description

半導體元件固定用薄膜狀接著劑、使用該接著劑之半導體裝置及該半導體裝置之製造方法Film-shaped adhesive for fixing semiconductor elements, semiconductor device using the same, and method for manufacturing the same

本發明係關於一種半導體元件固定用薄膜狀接著劑、使用該接著劑之半導體裝置及該半導體裝置之製造方法。The present invention relates to a film-like adhesive for fixing a semiconductor element, a semiconductor device using the same, and a method of manufacturing the semiconductor device.

近年來，電子機器之高功能化或輕薄短小化進步，而用於電子機器之各式各樣的零件被要求高密度積體化或高密度安裝化。而且，在使用於該種電子機器之半導體裝置中，正推動其小型化或多接腳化。又，就安裝用於該種半導體裝置之半導體元件的基板而言，亦正在推展其小型化或細配線化，例如，為了提高對電子機器之半導體裝置的收容性，已使用將硬質基板與軟質基板疊層並一體化之可折彎的軟硬基板。In recent years, electronic devices have been highly functionalized, thinner, and shorter, and various types of parts used in electronic machines have been required to be high-density integrated or high-density mounted. Moreover, in semiconductor devices used in such electronic devices, miniaturization or multi-pinning is being promoted. In addition, the substrate to which the semiconductor element of the semiconductor device is mounted is also being miniaturized or thinned. For example, in order to improve the accommodation property of the semiconductor device of the electronic device, the hard substrate and the soft substrate have been used. A flexible soft and hard substrate on which the substrate is laminated and integrated.

在該種狀況下，由於使用如習知引線架之半導體裝置在小型化方面有其極限，所以已經提案有一種採用將半導體元件安裝在基板上之所謂BGA(球閘陣列，Ball Grid Array)或CSP(晶片尺寸封裝，Chip Scale Package)的區域安裝型之搭載方式的半導體裝置。而，作為電性連接使用於該種半導體裝置的半導體元件之電極、及基板之電極的方法，為人周知者有一種打線接合方式或FC(覆晶，Flip Chip)連接方式，近年來，有揭示一種採用有利於更小型化之FC連接方式、及BGA或CSP搭載方式而所得的半導體裝置。Under such circumstances, since a semiconductor device such as a conventional lead frame has its limit in miniaturization, a so-called BGA (Ball Grid Array) using a semiconductor element mounted on a substrate or A semiconductor device of a mounting type of CSP (Chip Scale Package). Further, as a method of electrically connecting an electrode of a semiconductor element and an electrode of a substrate of such a semiconductor device, there is a wire bonding method or a Flip Chip connection method. A semiconductor device obtained by using an FC connection method which is advantageous for further miniaturization and a BGA or CSP mounting method is disclosed.

然而，在採用該種搭載方式之習知半導體裝置中，由於只能對一個半導體裝置收容一個半導體元件所以半導體裝置之小型化有其極限。又，在採用該種習知搭載方式之半導體裝置中，由於半導體元件動作所需之被動元件等電子零件被配置在半導體裝置之外部，所以使用此的電子機器之小型化亦有其極限，更且由於配線長度變長所以在處理高速信號之情況其設計上之限制會變大。However, in the conventional semiconductor device using such a mounting method, since only one semiconductor device can be housed in one semiconductor device, the miniaturization of the semiconductor device has its limit. Further, in the semiconductor device of the above-described conventional mounting method, since electronic components such as passive components required for the operation of the semiconductor element are disposed outside the semiconductor device, there is a limit to miniaturization of the electronic device using the same. Moreover, since the wiring length becomes long, the design limitation becomes large in the case of processing a high-speed signal.

因此，已經研究、揭示一些可將被動元件等電子零件備置於半導體裝置之內部的半導體裝置。作為該種半導體裝置，可列舉例如將半導體元件與電容器(電子零件)一體成型於日本專利特開平8－162608號公報(專利文獻1)所記載之基板上的半導體裝置，或具備日本專利特開2005－12199號公報(專利文獻2)所記載之基板、安裝於上述基板上之被動元件、及疊層於上述被動元件表面之半導體元件的半導體裝置等。在該種半導體裝置中，為了將半導體元件接著在基板上而使用半導體元件固定用接著劑。而且，在該種半導體元件固定用接著劑之領域中，為了謀求所獲得的半導體裝置之小型化，亦已研究、揭示各式各樣的半導體元件固定用接著劑。Therefore, some semiconductor devices in which electronic components such as passive components can be placed inside a semiconductor device have been studied and disclosed. For example, a semiconductor device in which a semiconductor device and a capacitor (electronic component) are integrally formed on a substrate described in Japanese Laid-Open Patent Publication No. Hei 8-162608 (Patent Document 1), or a Japanese Patent Laid-Open A substrate described in Japanese Laid-Open Patent Publication No. 2005-12199 (Patent Document 2), a passive device mounted on the substrate, and a semiconductor device or the like laminated on the surface of the passive element. In such a semiconductor device, an adhesive for fixing a semiconductor element is used in order to attach a semiconductor element to a substrate. Further, in the field of such an adhesive for fixing a semiconductor element, in order to reduce the size of the obtained semiconductor device, various types of adhesives for fixing a semiconductor element have been studied and disclosed.

例如，在日本專利特開2005－60417號公報(專利文獻3)中，揭示一種網版印刷用接著劑清漆，其包含(A)由四羧酸二酐組成之酸二酐成份、及含有以特定之矽氧二胺與特定之芳香族二胺作為主成份之二胺成份所聚合的聚醯亞胺樹脂100重量份、(B)環氧樹脂5至200重量份、(C)環氧樹脂硬化劑0.1至100重量份、(D)無機填充劑0至300重量份及(E)有機溶劑100至500重量份。然而，在使用專利文獻3所記載之習知液體型半導體元件固定用接著劑時，由於其接著劑中包含有機溶劑所以很難乾燥，且在加厚膜厚時會在所形成的接著劑層之膜產生空隙。因此，在該種液體型半導體元件固定用接著劑中，無法將乾燥後之接著劑層的厚度形成200 μ m以上，且無法利用該半導體元件固定用接著劑填埋因設置於基板上之電子零件的厚度而在基板與半導體元件之間所產生的空間。又，在該種習知液體型半導體元件固定用接著劑中，由於因利用網版印刷而使該接著劑附著所以在生產成本方面亦有問題。An adhesive varnish for screen printing comprising (A) an acid dianhydride component composed of a tetracarboxylic dianhydride, and a content thereof, is disclosed in Japanese Laid-Open Patent Publication No. 2005-60417 (Patent Document 3). 100 parts by weight of a polyimine resin obtained by polymerizing a specific dioxane diamine and a specific aromatic diamine as a main component, (B) epoxy resin 5 to 200 parts by weight, (C) epoxy resin The hardener is 0.1 to 100 parts by weight, (D) the inorganic filler is 0 to 300 parts by weight, and (E) the organic solvent is 100 to 500 parts by weight. However, when the conventional liquid-based semiconductor element fixing adhesive described in Patent Document 3 is used, since the adhesive contains an organic solvent, it is difficult to dry, and when the film thickness is thick, the formed adhesive layer is formed. The film creates a void. Therefore, in such an adhesive for fixing a liquid-type semiconductor element, the thickness of the adhesive layer after drying cannot be formed to be 200 μm or more, and the semiconductor-based fixing adhesive cannot be used to fill the electrons provided on the substrate. The thickness of the part and the space created between the substrate and the semiconductor element. Moreover, in such a conventional adhesive for fixing a liquid-type semiconductor element, since the adhesive is adhered by screen printing, there is a problem in terms of production cost.

又，在日本專利特開平10－259364號公報(專利文獻4)中，揭示一種電子零件用接著帶，其包含接著劑薄膜(a)、形成第2接著劑層之接著劑薄膜(b)、及塗敷、乾燥有機溶劑可溶性接著劑組成之塗敷液而形成的接著劑薄膜(c)。然而，在專利文獻4所記載之習知半導體元件固定用接著劑中，接著劑層之數量所需的塗佈步驟在塗佈設備、生產成本方面有很大的問題。更且，在使有機溶劑可溶性接著劑層乾燥時很難使有機溶劑蒸發，同時亦有在使之乾燥所得的有機溶劑可溶性接著劑層中發生空隙的問題。因此，在如專利文獻4所記載之半導體元件固定用接著劑中，無法將其厚度形成200 μ m以上，且無法利用該半導體元件固定用接著劑填埋因設置於基板上之電子零件的厚度而在基板與半導體元件之間所產生的空間。Japanese Patent Publication No. Hei 10-259364 (Patent Document 4) discloses an adhesive tape for an electronic component comprising an adhesive film (a) and an adhesive film (b) forming a second adhesive layer. And an adhesive film (c) formed by coating and drying a coating liquid composed of an organic solvent-soluble binder. However, in the conventional semiconductor element fixing adhesive described in Patent Document 4, the coating step required for the number of the adhesive layers has a large problem in terms of coating equipment and production cost. Further, it is difficult to evaporate the organic solvent when the organic solvent-soluble adhesive layer is dried, and there is also a problem that voids occur in the organic solvent-soluble adhesive layer obtained by drying it. Therefore, in the adhesive for fixing a semiconductor element described in Patent Document 4, the thickness cannot be 200 μm or more, and the thickness of the electronic component provided on the substrate cannot be filled with the adhesive for fixing the semiconductor element. And the space created between the substrate and the semiconductor element.

更且，在日本專利特開2001－49220號公報(專利文獻5)中，揭示一種將(A)氧化矽(silica)、(B)苯氧基樹脂、(C)縮水甘油醚型環氧樹脂、及(D)環氧樹脂硬化劑當作必須成份，而組成物中之氧化矽含量為50至80質量%，且(B)苯氧基樹脂/(C)縮水甘油醚型環氧樹脂之重量比為0.02至1之範圍的薄膜狀接著劑用組成物。然而，在專利文獻5所記載之薄膜狀半導體元件固定用接著劑中，設置於基板上的電子零件之厚度較厚時，並無法利用該半導體元件固定用接著劑充分地填埋在基板與半導體元件之間所產生的空間。Further, in Japanese Patent Laid-Open Publication No. 2001-49220 (Patent Document 5), there is disclosed (A) silica, (B) phenoxy resin, (C) glycidyl ether type epoxy resin. And (D) an epoxy resin hardener as an essential component, and the cerium oxide content in the composition is 50 to 80% by mass, and (B) phenoxy resin / (C) glycidyl ether type epoxy resin A composition for a film-like adhesive having a weight ratio of 0.02 to 1. However, in the adhesive for fixing a film-form semiconductor element described in Patent Document 5, when the thickness of the electronic component provided on the substrate is thick, the semiconductor device fixing adhesive cannot be sufficiently filled in the substrate and the semiconductor. The space created between the components.

(專利文獻1)日本專利特開平8－162608號公報(專利文獻2)日本專利特開2005－12199號公報(專利文獻3)日本專利特開2005－60417號公報(專利文獻4)日本專利特開平10－259364號公報(專利文獻5)日本專利特開2001－49220號公報(Patent Document 1) Japanese Patent Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 2005-60417 (Patent Document 3). Japanese Laid-Open Patent Publication No. 2001-49220 (Patent Document 5)

本發明係有鑒於上述先前技術所具有之課題而開發完成者，其目的在於提供一種半導體元件固定用薄膜狀接著劑、使用該接著劑之半導體裝置及該半導體裝置之製造方法，僅管其為半導體元件固定用薄膜狀接著劑，亦可一面將其厚度作得比設於基板上之電子零件的厚度還厚而一面充分地防止空隙(void)之發生，而且可利用該半導體元件固定用薄膜狀接著劑充分地填埋因設置於基板上之電子零件的厚度而在基板與半導體元件之間產生的空間，可既有效率且確實地將半導體元件接著在具有凹凸之基板。The present invention has been developed in view of the problems of the prior art described above, and an object of the invention is to provide a film-like adhesive for fixing a semiconductor element, a semiconductor device using the same, and a method for manufacturing the semiconductor device, The film-like adhesive for fixing a semiconductor element can sufficiently prevent the occurrence of voids while making the thickness of the electronic component to be thicker than the thickness of the electronic component provided on the substrate, and the film for fixing the semiconductor element can be used. The adhesive sufficiently fills a space created between the substrate and the semiconductor element by the thickness of the electronic component provided on the substrate, and the semiconductor element can be efficiently and surely adhered to the substrate having the unevenness.

本發明人等為了達成上述目的而反覆精心致力研究結果，發現藉著由在140℃之熔融黏度為50Pa．s以下之材料所構成的接著劑用薄膜疊層複數片，即可獲得具有比基板上之電子零件之厚度還厚的半導體元件固定用薄膜狀接著劑，且藉此可充分地防止空隙之發生，同時利用半導體元件固定用薄膜狀接著劑將因設置於基板上之電子零件的厚度而在基板與半導體元件之間產生的空間充分地填埋，可既有效率且確實地將半導體元件接著在基板，以致完成本發明。In order to achieve the above object, the present inventors have repeatedly worked hard to study the results, and found that the melt viscosity at 140 ° C is 50 Pa. In the adhesive composition of the material of s or less, a plurality of films are laminated, and a film-like adhesive for fixing a semiconductor element having a thickness larger than that of the electronic component on the substrate can be obtained, whereby the occurrence of voids can be sufficiently prevented. At the same time, the film-form adhesive for fixing a semiconductor element is used to sufficiently fill the space generated between the substrate and the semiconductor element due to the thickness of the electronic component provided on the substrate, so that the semiconductor element can be efficiently and surely The substrate is such that the present invention is completed.

亦即，本發明之半導體元件固定用薄膜狀接著劑，其特徵在：由在140℃之熔融黏度為50Pa．s以下之材料所構成的接著劑用薄膜疊層複數片而成者，且厚度為200 μ m至2000 μ m。That is, the film-like adhesive for fixing a semiconductor element of the present invention is characterized in that the melt viscosity at 140 ° C is 50 Pa. The adhesive composed of the material of s or less is formed by laminating a plurality of sheets of a film, and has a thickness of 200 μm to 2000 μm.

在此，說明本發明之材料的熔融黏度之測定方法。亦即，本發明之材料的熔融黏度之測定方法，係使用流動測試機(flow tester)(島津製作所製作，商品名「CFT－500A」)作為測試裝置，且將試驗片之樹脂事先加熱至預定溫度，從該熔融物通過細管時之黏性阻力測定的方法。Here, a method of measuring the melt viscosity of the material of the present invention will be described. In other words, the method for measuring the melt viscosity of the material of the present invention is a flow tester (manufactured by Shimadzu Corporation, trade name "CFT-500A") as a test device, and the resin of the test piece is previously heated to a predetermined temperature. Temperature, a method of measuring the viscous resistance of the melt as it passes through the straw.

又，作為上述本發明之半導體元件固定用薄膜狀接著劑，其中上述材料，較佳係為含有(A)氧化矽、(B)苯氧基樹脂、(C)縮水甘油醚型環氧樹脂、及(D)環氧樹脂硬化劑，而(A)氧化矽之含量為50至80質量%，且(B)苯氧基樹脂與(C)縮水甘油醚型環氧樹脂之重量比((B)苯氧基樹脂/(C)縮水甘油醚型環氧樹脂)為0.02至1之範圍的接著劑用組成物。Moreover, as the film-like adhesive for fixing a semiconductor element of the present invention, the material preferably contains (A) cerium oxide, (B) phenoxy resin, (C) glycidyl ether type epoxy resin, And (D) an epoxy resin hardener, and (A) a content of cerium oxide of 50 to 80% by mass, and (B) a weight ratio of the phenoxy resin to the (C) glycidyl ether type epoxy resin ((B) The phenoxy resin/(C) glycidyl ether type epoxy resin) is a composition for an adhesive in the range of 0.02 to 1.

更且，作為上述本發明之半導體元件固定用薄膜狀接著劑，較佳係於上述材料之熔融黏度在30000Pa．s以下之溫度以上且為上述材料之熱硬化開始溫度以下之溫度範圍內的溫度中，疊層上述複數片接著劑用薄膜者。Further, as the film-like adhesive for fixing the semiconductor element of the present invention, it is preferable that the melt viscosity of the material is 30,000 Pa. The film for the plurality of sheets of the above-mentioned plurality of adhesives is laminated at a temperature within a temperature range of not more than s and below the thermal curing start temperature of the above material.

又，本發明之半導體裝置之製造方法，其特徵在：使用上述本發明之半導體元件固定用薄膜狀接著劑，將半導體元件黏接在基板上。Moreover, the method of manufacturing a semiconductor device according to the present invention is characterized in that the semiconductor element is bonded to a substrate by using the film-like adhesive for fixing a semiconductor element of the present invention.

更且，本發明之半導體裝置，其特徵在具備：半導體元件、基板、及用以接著上述半導體元件與基板的上述本發明之半導體元件固定用薄膜狀接著劑。Furthermore, the semiconductor device of the present invention includes a semiconductor element, a substrate, and a film-like adhesive for fixing the semiconductor element of the present invention to which the semiconductor element and the substrate are to be continued.

依據本發明，可提供一種半導體元件固定用薄膜狀接著劑、使用該接著劑之半導體裝置及該半導體裝置之製造方法，僅管其為半導體元件固定用薄膜狀接著劑，亦可將其厚度作得比設於基板上之電子零件的厚度還厚，同時充分地防止空隙之發生，而且可利用該半導體元件固定用薄膜狀接著劑將因設置於基板上之電子零件的厚度而在基板與半導體元件之間產生的空間充分地填埋，可極有效率且確實地將半導體元件接著在具有凹凸之基板上。According to the present invention, there is provided a film-like adhesive for fixing a semiconductor element, a semiconductor device using the same, and a method for producing the semiconductor device, which may be a film-like adhesive for fixing a semiconductor element, or may have a thickness It is thicker than the thickness of the electronic component provided on the substrate, and at the same time, the occurrence of voids is sufficiently prevented, and the film-like adhesive for fixing the semiconductor element can be used for the substrate and the semiconductor due to the thickness of the electronic component provided on the substrate. The space created between the elements is sufficiently buried, and the semiconductor element can be extremely efficiently and surely attached to the substrate having the unevenness.

以下，就其較佳實施方式詳細說明本發明。Hereinafter, the present invention will be described in detail with respect to preferred embodiments thereof.

(半導體元件固定用薄膜狀接著劑)(film-like adhesive for fixing semiconductor elements)

首先，就本發明之半導體元件固定用薄膜狀接著劑加以說明。亦即，本發明之半導體元件固定用薄膜狀接著劑，其特徵係由在140℃之熔融黏度為50Pa．s以下之材料所構成的接著劑用薄膜疊層複數片而成者，且厚度為200 μ m至2000 μ m。該種半導體元件固定用薄膜狀接著劑，一面可適合於接著使用習知半導體元件固定用接著劑之半導體元件與基板的方法，而一面在安裝於半導體元件之溫度中顯示低熔融黏性，上述半導體元件固定用薄膜狀接著劑可一面藉此追隨基板上之凹凸，並利用該半導體元件固定用薄膜狀接著劑填埋在基板與半導體元件之間所產生之空間，而一面既有效率且確實地將半導體元件固定在基板上。First, a film-like adhesive for fixing a semiconductor element of the present invention will be described. That is, the film-like adhesive for fixing a semiconductor element of the present invention is characterized in that the melt viscosity at 140 ° C is 50 Pa. The adhesive composed of the material of s or less is formed by laminating a plurality of sheets of a film, and has a thickness of 200 μm to 2000 μm. Such a film-like adhesive for fixing a semiconductor element can be suitably used for a method of using a semiconductor element and a substrate for a conventional semiconductor element fixing adhesive, and exhibits low melt viscosity at a temperature of the semiconductor element mounted thereon. The film-like adhesive for fixing a semiconductor element can follow the irregularities on the substrate and fill the space between the substrate and the semiconductor element by the film-like adhesive for fixing the semiconductor element, and it is efficient and reliable. The semiconductor component is fixed on the substrate.

有關本發明之材料，係採用上述本發明之材料的熔融黏度之測定方法所測定的在140℃之熔融黏度為50Pa．s以下之材料。當該種熔融黏度超過50Pa．s，而使用所獲得的半導體元件固定用薄膜狀接著劑來黏接半導體元件與基板時，就無法使上述半導體元件固定用薄膜狀接著劑追隨因設置於基板上之電子零件的厚度而產生的基板上之凹凸，而會在基板與半導體元件之間產生空間。The material of the present invention has a melt viscosity at 140 ° C of 50 Pa as measured by the method for measuring the melt viscosity of the material of the present invention. s The following materials. When the melt viscosity exceeds 50Pa. s, when the semiconductor element and the substrate are bonded by using the obtained film-like adhesive for fixing a semiconductor element, the film-like adhesive for fixing the semiconductor element cannot be caused by the thickness of the electronic component provided on the substrate. The unevenness on the substrate creates a space between the substrate and the semiconductor element.

作為該種材料在140℃之熔融黏度，更佳為1Pa．s至50Pa．s。當該種熔融黏度未滿上述下限，則所獲得的半導體元件固定用薄膜狀接著劑就會變得過軟，而有使在基板上接著半導體元件時之操作性降低的傾向。As the material, the melt viscosity at 140 ° C, more preferably 1 Pa. s to 50Pa. s. When the melt viscosity is less than the lower limit, the film-form adhesive for fixing the semiconductor element obtained becomes too soft, and the workability in the case where the semiconductor element is subsequently attached to the substrate tends to be lowered.

又，作為該種材料若係在140℃之熔融黏度為50Pa．s以下之材料的話則未特別被限制，可適當地使用公知接著劑用之組成物等。而且，從在該種材料之中，可更充分地防止空隙之發生，並可更有效率地將半導體元件接著在具有凹凸之基板的觀點來看，較佳為使用含有(A)氧化矽、(B)苯氧基樹脂、(C)縮水甘油醚型環氧樹脂、及(D)環氧樹脂硬化劑，而(A)氧化矽之含量為50至80質量%，且(B)苯氧基樹脂與(C)縮水甘油醚型環氧樹脂之重量比((B)苯氧基樹脂/(C)縮水甘油醚型環氧樹脂)為0.02至1之範圍的接著劑用組成物。Moreover, as the material, the melt viscosity at 140 ° C is 50 Pa. The material of the following s is not particularly limited, and a composition for a known adhesive can be suitably used. Further, from among such materials, the occurrence of voids can be more sufficiently prevented, and the semiconductor element can be more efficiently used in the case of a substrate having irregularities, and it is preferable to use (A) yttrium oxide. (B) a phenoxy resin, (C) a glycidyl ether type epoxy resin, and (D) an epoxy resin hardener, and (A) a content of cerium oxide of 50 to 80% by mass, and (B) phenoxy The weight ratio of the base resin to the (C) glycidyl ether type epoxy resin ((B) phenoxy resin / (C) glycidyl ether type epoxy resin) is a composition for an adhesive of the range of 0.02 to 1.

作為用於可適當地用作本發明之材料的上述接著劑用組成物之(A)氧化矽並未特別被限定，可列舉破碎狀或球狀之熔融氧化矽粉末。該種(A)氧化矽之中更佳者亦可使用平均粒徑為5至40 μ m之球狀氧化矽與平均粒徑為0.1至5 μ m之微粒子球狀氧化矽的混合物。在使用該種(A)氧化矽時，較佳為總球狀氧化矽中所佔之微粒子球狀氧化矽的比例為50質量%以下，更佳為5至50質量%之範圍。當上述微粒子球狀氧化矽之比例超過50質量%時，會有組成物之熔融黏度增大並使暫時壓接特性降低的傾向，另一方面，當微粒子球狀氧化矽之比例未滿5質量%時會有形成接著劑用薄膜時之薄膜表面狀態的穩定性降低，或薄膜本身變脆之傾向。如此，在上述微粒子球狀氧化矽比率在5至50質量%之範圍時，由於會變成較寬廣之粒子大小(粒度)分佈所以可顯示穩定的薄膜表面性狀及薄膜流動性。The (A) cerium oxide used as the composition for the above-mentioned adhesive agent which can be suitably used as the material of the present invention is not particularly limited, and examples thereof include a crushed or spherical molten cerium oxide powder. More preferably, among the (A) cerium oxides, a mixture of spherical cerium oxide having an average particle diameter of 5 to 40 μm and fine spherical cerium oxide having an average particle diameter of 0.1 to 5 μm can be used. When the (A) cerium oxide is used, the proportion of the spherical spheroidal cerium oxide in the total spherical cerium oxide is preferably 50% by mass or less, more preferably 5 to 50% by mass. When the ratio of the above-mentioned fine particles of spherical cerium oxide exceeds 50% by mass, the melt viscosity of the composition increases and the temporary pressure bonding property tends to decrease. On the other hand, when the ratio of the spherical spherical cerium oxide is less than 5 mass When % is formed, there is a tendency that the stability of the surface state of the film when the film for an adhesive is formed or the film itself becomes brittle. As described above, when the ratio of the spherical spheroidal cerium oxide is in the range of 5 to 50% by mass, a stable particle size (particle size) distribution is exhibited, so that stable film surface properties and film fluidity can be exhibited.

又，上述接著劑用組成物中之(A)氧化矽的含量，較佳為50至80質量%之範圍。從本發明之接著劑用薄膜之線膨脹率減低的觀點來看雖然較佳係使含有更多的(A)氧化矽，但是當該種接著劑用組成物中之(A)氧化矽的含量超過80質量%時，因當作黏合劑(binder)使用之樹脂成份不足而使上述接著劑用組成物之黏度上升，有接著劑用組成物所組成之接著劑用薄膜變脆使暫時壓接性能顯著降低的傾向。又，在上述接著劑用組成物中之(A)氧化矽的含量未滿50質量%時，由於無法充分地減低所獲得的半導體元件固定用薄膜狀接著劑之線膨脹率，所以有半導體元件、與電子零件及基板間之應力變大的傾向，例如，在組裝半導體裝置(封裝)後之溫度循環試驗(－65至150℃)時會發生無法承受半導體裝置所產生之應力的情形。Moreover, the content of (A) cerium oxide in the composition for an adhesive agent is preferably in the range of 50 to 80% by mass. From the viewpoint of reducing the linear expansion ratio of the film for an adhesive of the present invention, it is preferable to contain more (A) cerium oxide, but the content of (A) cerium oxide in the composition for the adhesive is preferable. When the amount is more than 80% by mass, the viscosity of the composition for the above-mentioned adhesive is increased due to insufficient resin component used as a binder, and the film for an adhesive composed of the composition for an adhesive becomes brittle and temporarily crimped. The tendency to significantly reduce performance. In addition, when the content of the (A) cerium oxide in the composition for the adhesive is less than 50% by mass, the linear expansion ratio of the obtained film-form adhesive for fixing a semiconductor element cannot be sufficiently reduced, so that the semiconductor element is provided. The tendency to increase the stress between the electronic component and the substrate, for example, when the temperature cycle test (-65 to 150 ° C) after assembling the semiconductor device (package) occurs, the stress generated by the semiconductor device cannot be received.

更且，作為上述接著劑用組成物中之(A)氧化矽的含量，從更確實地將上述接著劑用組成物在140℃之熔融黏度設為50Pa．s以下的觀點來看，更佳為50至70質量%。Further, as the content of the (A) cerium oxide in the composition for the above-mentioned adhesive, the melt viscosity at 140 ° C of the composition for the above-mentioned adhesive is more reliably set to 50 Pa. From the viewpoint of s below, it is more preferably 50 to 70% by mass.

又，用於上述接著劑用組成物之(B)苯氧基樹脂並未特別被限制，可使用公知之苯氧基樹脂。作為(B)苯氧基樹脂，例如可列舉從如雙酚A(bisphenol)之雙酚與環氧氯丙烷(epichlorohydrin)所得之分子量成為10000以上的熱塑性樹脂。作為該種苯氧基樹脂，從更確實地將上述接著劑用組成物在140℃之熔融黏度設為50Pa．s以下的觀點來看，較佳者係分子量為10000至35000者。又，該種苯氧基樹脂，由於構造與環氧樹脂類似，所以具有與(C)縮水甘油醚型環氧樹脂之相溶性佳，更且接著性亦佳的特徵。作為(B)苯氧基樹脂，雖然可適合地使用主骨骼為雙酚A型者，但是其他亦可適合地使用雙酚A/F混合型苯氧基樹脂或溴化苯氧基樹脂等市售的苯氧基樹脂。Further, the (B) phenoxy resin used for the above-mentioned composition for an adhesive is not particularly limited, and a known phenoxy resin can be used. The (B) phenoxy resin may, for example, be a thermoplastic resin having a molecular weight of 10,000 or more derived from bisphenol and epichlorohydrin such as bisphenol. As such a phenoxy resin, the melt viscosity of the above-mentioned adhesive composition at 140 ° C is more reliably set to 50 Pa. From the viewpoint of the following, it is preferred that the molecular weight is from 10,000 to 35,000. Further, since the phenoxy resin has a structure similar to that of an epoxy resin, it has a characteristic of good compatibility with the (C) glycidyl ether type epoxy resin and further excellent adhesion. As the (B) phenoxy resin, a bisphenol A type may be suitably used, but other bisphenol A/F mixed phenoxy resin or brominated phenoxy resin may be suitably used. A phenoxy resin sold.

又，作為用於上述接著劑用組成物之(C)縮水甘油醚型環氧樹脂，可列舉酚醛清漆縮水甘油醚型、鄰－甲酚酚醛清漆縮水甘油醚型、芴雙酚縮水甘油醚型、三縮水甘油醚型、萘酚縮水甘油醚型、萘二酚縮水甘油醚型、三苯基縮水甘油醚型、四苯基縮水甘油醚型、雙酚A縮水甘油醚型、雙酚F縮水甘油醚型、雙酚AD縮水甘油醚型、雙酚S縮水甘油醚型、三羥甲基甲烷縮水甘油醚型等為例。即使在該種(C)縮水甘油醚型環氧樹脂之中，較佳為分子內具有2個以上之縮水甘油醚基者。又，作為該種(C)縮水甘油醚型環氧樹脂，可單獨使用1種或混合2種以上者來使用。Further, examples of the (C) glycidyl ether type epoxy resin used for the composition for an adhesive agent include a novolac glycidyl ether type, an o-cresol novolac glycidyl ether type, and a quinone bisphenol glycidyl ether type. ,three Glycidyl ether type, naphthol glycidyl ether type, naphthalenediol glycidyl ether type, triphenyl glycidyl ether type, tetraphenyl glycidyl ether type, bisphenol A glycidyl ether type, bisphenol F glycidyl ether For example, a bisphenol AD glycidyl ether type, a bisphenol S glycidyl ether type, a trimethylol methane glycidyl ether type, and the like. In the case of the (C) glycidyl ether type epoxy resin, it is preferred to have two or more glycidyl ether groups in the molecule. In addition, as the (C) glycidyl ether type epoxy resin, one type may be used alone or two or more types may be used in combination.

以(B)苯氧基樹脂/(C)縮水甘油醚型環氧樹脂所計算的重量比較佳為0.02至1之範圍，更佳為0.1至0.7之範圍。上述重量比未滿0.02時則有無法將所獲得的上述接著劑用組成物形成薄膜形狀之傾向，另一方面，當上述重量比超過1時，則有所獲得的薄膜變脆之傾向。又，以(B)苯氧基樹脂/(C)縮水甘油醚型環氧樹脂所計算的重量比，從更確實地將上述接著劑用組成物在140℃之熔融黏度設為50Pa．s以下的觀點來看，特佳為0.3至0.5之範圍。The weight calculated by the (B) phenoxy resin / (C) glycidyl ether type epoxy resin is preferably in the range of 0.02 to 1, more preferably in the range of 0.1 to 0.7. When the weight ratio is less than 0.02, the obtained composition for an adhesive may not be formed into a film shape. On the other hand, when the weight ratio exceeds 1, the obtained film tends to be brittle. Further, the weight ratio calculated by the (B) phenoxy resin/(C) glycidyl ether type epoxy resin is more reliably set to 50 Pa at a melt viscosity at 140 ° C. From the viewpoint of the following, it is particularly preferably in the range of 0.3 to 0.5.

更且，在用於上述接著劑用組成物之(D)環氧樹脂硬化劑中，雖然可使用胺類、酸酐類、多價苯酚類等公知的硬化劑，但是較佳為以常溫以上之預定溫度，例如由(B)苯氧基樹脂、(C)縮水甘油醚型環氧樹脂、及依其他必要而添加的樹脂(但是，(D)環氧樹脂硬化劑除外)所組成之樹脂成份顯示必要黏著性的溫度以上發揮硬化性，而且發揮速硬化性的潛在性硬化劑。作為該種潛在性硬化劑，亦可使用雙氰胺、咪唑、醯肼、三氟化硼－胺錯合物、胺醯亞胺、多胺鹽及該等之改質物、更亦可使用微膠囊型者。該等，可單獨使用1種或混合2種以上來使用。藉由使用該種潛在性硬化劑即可提供一種可在室溫下長期保存且保存穩定性高的薄膜接著劑用組成物。作為該種環氧樹脂硬化劑之含量相對於(C)縮水甘油醚型環氧樹脂，通常為0.5至50質量%之範圍。Further, in the (D) epoxy resin curing agent used for the above-mentioned composition for an adhesive, a known curing agent such as an amine, an acid anhydride or a polyvalent phenol can be used, but it is preferably at a normal temperature or higher. a predetermined temperature, for example, a resin component composed of (B) a phenoxy resin, (C) a glycidyl ether type epoxy resin, and a resin added as necessary (except for (D) an epoxy resin hardener) A latent curing agent which exhibits curability and exhibits rapid hardening properties at a temperature higher than the required adhesiveness. As such a latent hardener, dicyandiamide, imidazole, hydrazine, boron trifluoride-amine complex, amine quinone imine, polyamine salt, and the like, and micro gram can also be used. Capsule type. These may be used alone or in combination of two or more. By using such a latent curing agent, a composition for a film adhesive which can be stored at room temperature for a long period of time and has high storage stability can be provided. The content of the epoxy resin hardener is usually in the range of 0.5 to 50% by mass based on the (C) glycidyl ether type epoxy resin.

又，上述接著劑用組成物中，除了(A)至(D)成份以外，亦可在不損本發明之效果的範圍內含有少量的其他樹脂。作為該種其他樹脂並未特別被限制，例如，可列舉矽烷偶合材料、表面改質材料。Further, in the composition for an adhesive agent, in addition to the components (A) to (D), a small amount of other resin may be contained in a range that does not impair the effects of the present invention. The other resin is not particularly limited, and examples thereof include a decane coupling material and a surface modifying material.

以下，將由上述接著劑用組成物中所含有的(B)苯氧基樹脂、(C)縮水甘油醚型環氧樹脂、及依必要而添加的其他樹脂(但是，(D)環氧樹脂硬化劑除外)所組成之成份稱為樹脂成份，將該種樹脂成份形成均勻之組成物時的軟化點稱為樹脂成份之軟化點。In the following, (B) a phenoxy resin, (C) a glycidyl ether type epoxy resin, and other resins added as necessary (but, (D) epoxy resin hardened) are contained in the composition for an adhesive. The component consisting of the agent is called a resin component, and the softening point when the resin component forms a uniform composition is called the softening point of the resin component.

(B)苯氧基樹脂、與(C)縮水甘油醚型環氧樹脂之混合比率，雖係依其成份之組合而改變，但是從顯示所獲得的半導體元件固定用薄膜狀接著劑更優越之暫時壓著性的觀點來看，係以上述樹脂成份之混合物的軟化點，較佳為100℃以下，更佳為50至100℃，最佳為65至90℃之範圍的方式，來混合(B)苯氧基樹脂、與(C)縮水甘油醚型環氧樹脂為佳。在上述樹脂成份之軟化點超過100℃時，會有所獲得的半導體元件固定用薄膜狀接著劑之薄片變硬、變脆，同時暫時壓著變得困難的傾向，又，在軟化點未滿50℃時，會有在所獲得的半導體元件固定用薄膜狀接著劑之表面發現黏著(tack)性強而處理性顯著降低，同時常溫保存時上述半導體元件固定用薄膜狀接著劑流動的傾向。(B) The mixing ratio of the phenoxy resin and the (C) glycidyl ether type epoxy resin is changed depending on the combination of the components, but the film-like adhesive for fixing the semiconductor element obtained by the display is superior. From the viewpoint of temporary crimpability, the softening point of the mixture of the above resin components is preferably 100 ° C or less, more preferably 50 to 100 ° C, and most preferably 65 to 90 ° C. B) A phenoxy resin and (C) glycidyl ether type epoxy resin are preferred. When the softening point of the resin component exceeds 100 ° C, the sheet of the film-form adhesive for fixing a semiconductor element obtained becomes hard and brittle, and tends to be temporarily pressed, and the softening point is not sufficient. At 50 ° C, the surface of the film-form adhesive for fixing a semiconductor element to be obtained is found to have a strong tack property, and the handleability is remarkably lowered, and the film-like adhesive for fixing the semiconductor element tends to flow during storage at room temperature.

又，作為上述接著劑用組成物中之上述樹脂成份中所佔的(B)苯氧基樹脂之比例，較佳為50質量%以下。藉由將(B)苯氧基樹脂之比例設為50質量%以下，則有容易使上述半導體元件固定用薄膜狀接著劑之薄片具有支撐性的傾向。又，作為上述樹脂成份中所佔的(B)苯氧基樹脂之比例，更佳為10至50質量%。在(B)苯氧基樹脂之比例未滿10質量%時，會有因所獲得的上述半導體元件固定用薄膜狀接著劑之薄片變脆、樹脂成份之軟化點亦變低而不易發現上述薄片單獨之支撐性的傾向，另一方面，當超過50質量%時，會有上述薄片變硬、上述薄片單獨時容易破裂的傾向。更且，作為上述接著劑用組成物中之上述樹脂成份中所佔的(B)苯氧基樹脂之比例，從更確實地將上述接著劑用組成物在140℃之熔融黏度設為50Pa．s以下的觀點來看，特佳為10至30質量%。Moreover, the ratio of the (B) phenoxy resin which is contained in the resin component in the composition for an adhesive is preferably 50% by mass or less. When the ratio of the (B) phenoxy resin is 50% by mass or less, the sheet of the film-form adhesive for fixing the semiconductor element tends to have supportability. Further, the ratio of the (B) phenoxy resin in the resin component is more preferably from 10 to 50% by mass. When the ratio of the (B) phenoxy resin is less than 10% by mass, the sheet of the film-like adhesive for fixing the semiconductor element obtained is brittle, and the softening point of the resin component is also low, and the sheet is not easily found. On the other hand, when the content exceeds 50% by mass, the sheet tends to be hard, and the sheet tends to be broken when it is alone. Further, as the ratio of the (B) phenoxy resin in the resin component in the composition for an adhesive, the melt viscosity of the composition for the adhesive at 140 ° C is more reliably set to 50 Pa. From the viewpoint of the following, it is particularly preferably from 10 to 30% by mass.

又，上述接著劑用組成物中，作為其他添加劑，例如亦可含有丁二烯系橡膠或矽氧橡膠等作為偶合劑、氧化防止劑、難燃劑、著色劑、應力緩和劑。從在該種添加劑之中亦補強與氧化矽之界面使之發現較高的破壞強度，同時提高黏著力的觀點來看，較佳為上述偶合劑。又，作為該種偶合劑，更佳為使用含有胺基、環氧基者。Further, as the other additive, the composition for the above-mentioned adhesive may contain, for example, a butadiene rubber or a silicone rubber as a coupling agent, an oxidation inhibitor, a flame retardant, a colorant, and a stress relieving agent. From the viewpoint of reinforcing the interface between the additives and the cerium oxide to find a high breaking strength and at the same time improving the adhesion, the above coupling agent is preferred. Further, as such a coupling agent, it is more preferred to use an amine group or an epoxy group.

本發明之接著劑用薄膜，係將上述材料薄膜化所得者。如此，將上述材料薄膜化所得的本發明之接著劑用薄膜，會有在常溫下黏著性小作業性優的傾向。The film for an adhesive of the present invention is obtained by thinning the above material. As described above, the film for an adhesive of the present invention obtained by thinning the above-mentioned material tends to have excellent workability at room temperature and excellent workability.

又，作為該種薄膜化之方法並未特別被限制，可適當地採用公知的方法。以下，說明將適合的上述接著劑用組成物薄膜化作為本發明之材料的適合方法。Moreover, the method of thin film formation is not particularly limited, and a known method can be suitably employed. Hereinafter, a suitable method of forming a suitable composition for the above-mentioned adhesive agent as a material of the present invention will be described.

作為上述接著劑用組成物薄膜化之適合方法，例如可列舉使上述接著劑用組成物溶解於甲苯、二甲苯等芳香族碳化氫、MIBK或MEK等酮系、單甘二甲醚(monoglyme)、二甘二甲醚(diglyme)等醚系之單獨或混合的有機溶媒中，且將所獲得的清漆塗佈在經離模處理過之PP、PE、PET等基材(保護薄膜)，且施予上述接著劑用組成物之硬化開始溫度以下的熱處理，再予以乾燥的方法。又，該種上述接著劑用組成物所形成的接著劑用薄膜之厚度，從防止空隙之發生的觀點來看，較佳為10至150 μ m之範圍。For example, the composition for the above-mentioned adhesive agent is dissolved in an aromatic hydrocarbon such as toluene or xylene, a ketone system such as MIBK or MEK, or a monoglyme. And an ether or a mixed organic solvent such as diglyme, and the obtained varnish is applied to a substrate (protective film) such as PP, PE, PET, which has been subjected to release treatment, and A method of applying a heat treatment at a curing start temperature or lower of the composition for the above-mentioned adhesive agent, followed by drying. Moreover, the thickness of the film for an adhesive formed by the composition for the above-mentioned adhesive agent is preferably in the range of 10 to 150 μm from the viewpoint of preventing the occurrence of voids.

以下，一面參照圖式而一面就本發明之半導體元件固定用薄膜狀接著劑的較佳實施方式加以詳細說明。另外，以下之說明及圖式中，在相同或相當之要素附記相同之元件符號，且省略其重複之說明。Hereinafter, a preferred embodiment of the film-like adhesive for fixing a semiconductor element of the present invention will be described in detail with reference to the drawings. In the following description and the drawings, the same or equivalent elements are denoted by the same reference numerals, and the description thereof will not be repeated.

第1圖係顯示本發明之半導體元件固定用薄膜狀接著劑10構成較佳之一實施方式的概略縱剖面圖。第1圖所示的本發明之半導體元件固定用薄膜狀接著劑10具備複數片之接著劑用薄膜20。如此，本發明之半導體元件固定用薄膜狀接著劑10係層疊複數片之接著劑用薄膜20所成，且厚度L為200 μ m至2000 μ m者。Fig. 1 is a schematic longitudinal cross-sectional view showing a preferred embodiment of the film-like adhesive 10 for fixing a semiconductor element of the present invention. The film-like adhesive 10 for fixing a semiconductor element of the present invention shown in Fig. 1 includes a plurality of films 20 for an adhesive. As described above, the film-like adhesive 10 for fixing a semiconductor element of the present invention is formed by laminating a plurality of films 20 for an adhesive, and has a thickness L of 200 μm to 2000 μm.

該種半導體元件固定用薄膜狀接著劑之厚度若未滿200 μ m，則由於半導體元件固定用薄膜狀接著劑之厚度變得比設置在使接著半導體元件之基板上的電子零件之厚度還薄，所以無法利用上述半導體元件固定用薄膜狀接著劑來填埋因上述電子零件而在基板與半導體元件之間所產生的空間。另一方面，當該種半導體元件固定用薄膜狀接著劑之厚度L超過2000 μ m時則使用時無法在厚度方向傳遞足夠的熱。When the thickness of the film-like adhesive for fixing the semiconductor element is less than 200 μm, the thickness of the film-form adhesive for fixing the semiconductor element is thinner than the thickness of the electronic component provided on the substrate on which the semiconductor element is attached. Therefore, it is not possible to fill the space generated between the substrate and the semiconductor element by the above-described electronic component by using the above-described semiconductor element-fixing film-like adhesive. On the other hand, when the thickness L of the film-like adhesive for fixing such a semiconductor element exceeds 2000 μm, sufficient heat cannot be transmitted in the thickness direction at the time of use.

又，作為該種半導體元件固定用薄膜狀接著劑之厚度，較佳為250 μ m至1800 μ m，更佳為300 μ m至1500 μ m。在上述半導體元件固定用薄膜狀接著劑之厚度L未滿上述下限時，會有無法利用上述半導體元件固定用薄膜狀接著劑充分地填埋在基板與半導體元件之間所產生的空間之傾向，另一方面，當超過上述上限時則有使用時很難在厚度方向傳遞足夠的熱之傾向。Moreover, the thickness of the film-like adhesive for fixing such a semiconductor element is preferably from 250 μm to 1800 μm, more preferably from 300 μm to 1500 μm. When the thickness L of the film-form adhesive for fixing the semiconductor element is less than the lower limit, there is a tendency that the film-form adhesive for fixing the semiconductor element is not sufficiently filled in the space between the substrate and the semiconductor element. On the other hand, when the above upper limit is exceeded, there is a tendency that it is difficult to transfer sufficient heat in the thickness direction when used.

又，作為本發明之半導體元件固定用薄膜狀接著劑10，較佳為在上述材料之熔融黏度在30000Pa．s以下之溫度以上且為上述材料之熱硬化開始溫度以下之溫度範圍內的溫度中，疊層上述複數片接著劑用薄膜20者。在上述材料之熔融黏度在30000Pa．s以下之溫度以上且為上述材料之熱硬化開始溫度以下之溫度範圍內的溫度中，疊層上述複數片接著劑用薄膜20時，在所獲得的半導體元件固定用薄膜狀接著劑中會有上述接著劑用薄膜20之界面21變無的傾向。因而，滿足該種條件的本發明之半導體元件固定用薄膜狀接著劑10，看起來宛如由1片之接著劑用薄片所構成般。Further, as the film-like adhesive 10 for fixing a semiconductor element of the present invention, it is preferable that the melt viscosity of the above material is 30,000 Pa. The film 20 for the plurality of sheets of the above-mentioned adhesive is laminated in a temperature range of not less than the temperature below s and at a temperature lower than the thermal curing start temperature of the above material. The melt viscosity of the above materials is at 30000Pa. When the film 20 for a plurality of adhesive sheets is laminated in a temperature range of not less than the temperature of s or less and a temperature within a temperature range of the thermal curing start temperature of the material, the film-form adhesive for fixing the semiconductor element obtained may be The interface 21 of the adhesive film 20 tends to be absent. Therefore, the film-like adhesive 10 for fixing a semiconductor element of the present invention which satisfies such a condition seems to be constituted by a sheet for an adhesive for one sheet.

本發明之半導體元件固定用薄膜狀接著劑10的硬化物之線膨脹率，常溫(23℃)較佳為30ppm以下。當上述線膨脹率之值高於30ppm時，由於與電子零件或基板等之線膨脹率的差會變大，所以無法利用半導體元件固定用薄膜狀接著劑10充分抑制對電子零件或基板的應力，且在使用所獲得的半導體裝置時會有一部分遭破壞的傾向。又，從配合電子零件或基板之線膨脹率的觀點來看，作為該種半導體元件固定用薄膜狀接著劑10的硬化物之線膨脹率更佳為10至20ppm。The linear expansion ratio of the cured product of the film-like adhesive 10 for fixing a semiconductor element of the present invention is preferably 30 ppm or less at normal temperature (23 ° C). When the value of the coefficient of linear expansion is more than 30 ppm, the difference in linear expansion ratio with an electronic component or a substrate becomes large, so that the stress on the electronic component or the substrate cannot be sufficiently suppressed by the film-like adhesive 10 for fixing the semiconductor element. However, when the obtained semiconductor device is used, a part of it is destroyed. In addition, from the viewpoint of the linear expansion ratio of the electronic component or the substrate, the linear expansion ratio of the cured product of the film-like adhesive 10 for fixing the semiconductor element is preferably from 10 to 20 ppm.

作為層疊複數片之接著劑用薄膜20的方法並未特別被限制，亦可如前面所述般地在事先調製複數片之接著劑用薄膜20之後，依序疊層該等，或是如前面所述般地在將含有本發明之材料的清漆塗佈在保護薄膜上，且使之乾燥並調製接著劑用薄膜20之後，對所獲得的接著劑用薄膜20之表面再次塗佈上述清漆，且使之乾燥並依序疊層接著劑用薄膜20。又，疊層複數片之該種接著劑用薄膜20的步驟，亦可在對半導體元件供給上述半導體元件固定用薄膜狀接著劑10時同時進行。The method for laminating the film 20 for an adhesive for a plurality of sheets is not particularly limited, and the film for the adhesive film 20 may be laminated in advance after the film 20 for the adhesive film is prepared in advance as described above, or as before. After the varnish containing the material of the present invention is applied onto the protective film, and dried, and the film 20 for an adhesive is prepared, the varnish is applied again to the surface of the obtained film 20 for the adhesive. And it is dried and the film 20 for adhesives is laminated in order. In addition, the step of laminating the film 20 for the adhesive of the plurality of sheets may be simultaneously performed when the film-like adhesive 10 for fixing the semiconductor element is supplied to the semiconductor element.

作為層疊複數片之該種接著劑用薄膜的方法，較佳為採用在從上述材料之熔融黏度變成30000Pa．s以下之溫度以上且為上述材料之熱硬化開始溫度以下之溫度範圍內的溫度中，疊層上述複數片接著劑用薄膜20的方法。在上述材料之熔融黏度未滿30000Pa．s以下之溫度疊層上述接著劑用薄膜時，在所獲得的半導體元件固定用薄膜狀接著劑10中會有殘留接著劑用薄膜20之界面21的傾向，另一方面，在超出上述材料之熱硬化開始溫度的溫度中疊層上述接著劑用薄膜時，由於接著劑用薄膜20中之材料硬化，所以有所獲得的半導體元件固定用薄膜狀接著劑10不具作為接著劑之功能的傾向。As a method of laminating the film for the adhesive of the plurality of sheets, it is preferred to use a melt viscosity of 30,000 Pa from the above material. The method of laminating the above-mentioned film 20 for a plurality of sheets of the adhesive is carried out at a temperature within a temperature range equal to or lower than the temperature at which the temperature is below the thermal curing start temperature of the above material. The melt viscosity of the above materials is less than 30000Pa. When the film for the above-mentioned adhesive agent is laminated at a temperature of s or less, the interface 21 for the film for adhesive film 20 tends to remain in the obtained film-like adhesive 10 for fixing the semiconductor element, and the material is beyond the above-mentioned material. When the film for an adhesive is laminated in the temperature at the temperature of the heat-hardening start temperature, the film-form adhesive 10 for fixing the semiconductor element obtained has no tendency to function as an adhesive.

(半導體裝置之製造方法)(Method of Manufacturing Semiconductor Device)

其次，就本發明之半導體裝置之製造方法加以說明。亦即，本發明之半導體裝置之製造方法，係以使用上述本發明之半導體元件固定用薄膜狀接著劑，將半導體元件接著在基板為其特徵的方法。Next, a method of manufacturing the semiconductor device of the present invention will be described. In other words, the method of manufacturing a semiconductor device of the present invention is a method in which a semiconductor element is subsequently formed on a substrate by using the film-like adhesive for fixing a semiconductor element of the present invention.

以下，一面參照圖式而一面就本發明之半導體裝置之製造方法的較佳之一實施方式加以詳細說明。另外，在以下之說明及圖式中，相同或相當之要素附記相同之元件符號，且省略其重複之說明。Hereinafter, a preferred embodiment of the method of manufacturing a semiconductor device of the present invention will be described in detail with reference to the drawings. In the following description and the drawings, the same or equivalent elements are denoted by the same reference numerals, and the description thereof will not be repeated.

第2圖係顯示用於本發明之基板較佳之一實施方式的概略縱剖面圖。在第2圖所示之基板30中，係在基板30上搭載有電子零件40。Fig. 2 is a schematic longitudinal cross-sectional view showing a preferred embodiment of a substrate used in the present invention. In the substrate 30 shown in FIG. 2, the electronic component 40 is mounted on the substrate 30.

作為基板30雖未特別被限制，但是可適當地使用形成有電路之基板，例如可使用印刷電路基板(PCB)。又，作為搭載於基板30上之電子零件40雖未特別被限制，但是可列舉例如電阻元件、電容器等的被動零件。The substrate 30 is not particularly limited, but a substrate on which a circuit is formed can be suitably used. For example, a printed circuit board (PCB) can be used. In addition, the electronic component 40 mounted on the substrate 30 is not particularly limited, and examples thereof include passive components such as a resistor element and a capacitor.

又，在形成有電路之基板30上搭載電子零件40的方法亦未特別被限制，可適當地採用使用銲錫之習知表面搭載技術、或使用導電糊之方法、使用金球凸塊(stud bump)之方法等的習知公知方法。Further, the method of mounting the electronic component 40 on the substrate 30 on which the circuit is formed is not particularly limited, and a conventional surface mounting technique using solder, or a method using a conductive paste, using a gold ball bump (stud bump) may be suitably employed. A well-known method such as the method of the method.

其次，說明使用該種基板30的本發明之半導體裝置之製造方法的較佳方法。該種本發明之半導體裝置之製造方法的較佳方法，基本上，該方法包含有：步驟(i)，其對半導體元件供給上述本發明之半導體元件固定用薄膜狀接著劑；步驟(ii)，其以在搭載有電子零件之基板表面疊層上述半導體元件固定用薄膜狀接著劑之表面的方式將上述半導體元件接著在基板上；步驟(iii)，其介以搭接線來連接上述半導體元件與基板；及步驟(iv)，其利用密封樹脂來密封基板與半導體元件以獲得半導體裝置。Next, a preferred method of the method of manufacturing the semiconductor device of the present invention using such a substrate 30 will be described. In a preferred method of the method for fabricating a semiconductor device of the present invention, the method basically comprises the step (i) of supplying the above-described thin film adhesive for fixing a semiconductor device of the present invention to a semiconductor device; and (ii) The semiconductor element is subsequently mounted on the surface of the substrate for fixing the semiconductor element on the surface of the substrate on which the electronic component is mounted, and the semiconductor element is connected to the semiconductor via a bonding wire in the step (iii). An element and a substrate; and a step (iv) of sealing the substrate and the semiconductor element with a sealing resin to obtain a semiconductor device.

首先，就步驟(i)加以說明。亦即，步驟(i)，係對半導體元件供給上述本發明之半導體元件固定用薄膜狀接著劑的步驟。First, explain step (i). In other words, the step (i) is a step of supplying the above-described film-like adhesive for fixing a semiconductor element of the present invention to a semiconductor element.

第3圖係顯示半導體元件固定用薄膜狀接著劑疊層半導體元件較佳之一實施方式的概略縱剖面圖。亦即，第3圖係顯示在半導體元件50之背面50a疊層有半導體元件固定用薄膜狀接著劑10的狀態。半導體元件固定用薄膜狀接著劑10係疊層複數片之接著劑用薄膜20所成的前面所述本發明之半導體元件固定用薄膜狀接著劑。更且，作為該種半導體元件50並未特別被限制，可適當地使用公知之半導體元件。Fig. 3 is a schematic longitudinal cross-sectional view showing an embodiment of a film-form adhesive-layered semiconductor device for fixing a semiconductor element. In other words, the third embodiment shows a state in which the film-like adhesive 10 for fixing a semiconductor element is laminated on the back surface 50a of the semiconductor element 50. The film-like adhesive for fixing a semiconductor element 10 is a film-form adhesive for fixing a semiconductor element of the present invention which is formed by laminating a plurality of films 20 for an adhesive. Further, the semiconductor element 50 is not particularly limited, and a known semiconductor element can be suitably used.

作為將該種上述本發明之半導體元件固定用薄膜狀接著劑10供至半導體元件50之背面50a的方法並未特別被限制，可適當地採用能使半導體元件固定用薄膜狀接著劑10疊層於半導體元件50之背面50a的方法。作為將半導體元件固定用薄膜狀接著劑10供至半導體元件50之背面50a的方法，可列舉在將接著劑用薄膜20貼合於半導體元件50之背面50a之後，依序疊層接著劑用薄膜20並將半導體元件固定用薄膜狀接著劑10供至半導體元件50之背面50a直至所期望之厚度為止的方法、或將接著劑用薄膜20事先疊層成目的之厚度而所獲得的半導體元件固定用薄膜狀接著劑10貼合於半導體元件50之背面50a並將半導體元件固定用薄膜狀接著劑10供至半導體元件50之背面50a的方法等。The method of supplying the film-like adhesive 10 for fixing the semiconductor element of the present invention to the back surface 50a of the semiconductor element 50 is not particularly limited, and a film-like adhesive 10 for fixing the semiconductor element can be suitably laminated. A method of the back surface 50a of the semiconductor device 50. As a method of supplying the film-like adhesive 10 for fixing a semiconductor element to the back surface 50a of the semiconductor element 50, a film for an adhesive is sequentially laminated after the film 20 for an adhesive is bonded to the back surface 50a of the semiconductor element 50. (20) A method of supplying a film-like adhesive 10 for fixing a semiconductor element to the back surface 50a of the semiconductor element 50 to a desired thickness, or a method of laminating the film for the adhesive film 20 to a desired thickness. The film-like adhesive 10 is bonded to the back surface 50a of the semiconductor element 50, and the film-like adhesive 10 for fixing the semiconductor element is supplied to the back surface 50a of the semiconductor element 50.

又，作為將該種上述本發明之半導體元件固定用薄膜狀接著劑10供至半導體元件50之背面50a時所用的裝置並未特別被限制，可適當地使用例如軋輥貼合機(roll laminator)等的公知裝置。In addition, the apparatus used for supplying the film-like adhesive 10 for fixing the semiconductor element of the present invention to the back surface 50a of the semiconductor element 50 is not particularly limited, and a roll laminator such as a roll laminator can be suitably used. A known device.

又，在將該種半導體元件固定用薄膜狀接著劑10貼合於半導體元件50之背面50a時，較佳為在構成接著劑用薄膜20的材料之熔融黏度在30000Pa．s以下之溫度以上且為上述材料之熱硬化開始溫度以下之溫度範圍內的溫度中貼合半導體元件固定用薄膜狀接著劑10。在該種溫度條件下藉由在半導體元件50貼合半導體元件固定用薄膜狀接著劑10，則在半導體元件固定用薄膜狀接著劑10中，有接著劑用薄膜20之界面變無的傾向。又，在該種溫度條件未滿上述材料之熔融黏度在30000Pa．s以下之溫度的情況，在半導體元件固定用薄膜狀接著劑10中會有殘留接著劑用薄膜20之界面的傾向，另一方面，當超出熱硬化開始溫度時，在將半導體元件固定用薄膜狀接著劑10貼合於半導體元件50之背面50a的階段中，半導體元件固定用薄膜狀接著劑10會硬化，而在將半導體元件接著在基板時會有對基板之接著性降低的傾向。Further, when the film-like adhesive 10 for fixing the semiconductor element is bonded to the back surface 50a of the semiconductor element 50, the melt viscosity of the material constituting the film 20 for the adhesive is preferably 30,000 Pa. The film-like adhesive 10 for fixing a semiconductor element is bonded to a temperature within a temperature range of not less than the temperature of s below the thermal curing start temperature of the above material. When the film-like adhesive 10 for fixing the semiconductor element is bonded to the semiconductor element 50 under such a temperature condition, the interface between the film 20 for the adhesive agent tends to be absent in the film-like adhesive 10 for fixing the semiconductor element. Moreover, in this temperature condition, the melt viscosity of the above material is less than 30,000 Pa. In the case of the temperature of s or less, the interface between the film 20 for the adhesive agent tends to remain in the film-like adhesive 10 for fixing the semiconductor element. On the other hand, when the thermal curing start temperature is exceeded, the film for fixing the semiconductor element is used. When the adhesive 10 is bonded to the back surface 50a of the semiconductor element 50, the thin film adhesive 10 for fixing the semiconductor element is cured, and the adhesion to the substrate tends to decrease when the semiconductor element is subsequently attached to the substrate.

又，在將本發明之半導體元件固定用薄膜狀接著劑10供至半導體元件50之背面50之後，藉由在半導體元件固定用薄膜狀接著劑10面貼合切割薄膜(dicing film)，且利用切割機將半導體元件個片化，即可獲得對背面供給接著劑的半導體元件固定用薄膜狀接著劑疊層半導體元件。In addition, after the film-like adhesive 10 for fixing the semiconductor element of the present invention is applied to the back surface 50 of the semiconductor device 50, a dicing film is bonded to the surface of the film-like adhesive 10 for fixing the semiconductor element, and the dicing film is used. In the dicing machine, a semiconductor element is formed into a sheet, and a film-like adhesive-layered semiconductor element for fixing a semiconductor element to the back surface is obtained.

該種切割薄膜並未特別被限制，可適當地使用公知之切割薄膜。更且，上述切割機並未特別被限制，可適當地使用公知之切割機。Such a dicing film is not particularly limited, and a known dicing film can be suitably used. Further, the above cutting machine is not particularly limited, and a known cutting machine can be suitably used.

其次，就步驟(ii)至(iv)加以說明。亦即，步驟(ii)係以在搭載有電子零件之基板表面疊層上述半導體元件固定用薄膜狀接著劑之表面的方式將上述半導體元件安裝在基板上的步驟；步驟(iii)係介以搭接線來連接上述半導體元件與基板的步驟；步驟(iv)係利用密封樹脂來密封基板與半導體元件以獲得半導體裝置的步驟。Next, steps (ii) to (iv) are explained. In the step (ii), the semiconductor element is mounted on the substrate so that the surface of the film-like adhesive for fixing the semiconductor element is laminated on the surface of the substrate on which the electronic component is mounted; and step (iii) is introduced The step of bonding the wiring to connect the semiconductor element and the substrate; and the step (iv) is a step of sealing the substrate and the semiconductor element with a sealing resin to obtain a semiconductor device.

第4圖(a)至(d)係顯示該種步驟(ii)至(iv)之較佳之一實施方式的概略圖。第4圖(a)係顯示搭載有電子零件40之基板30；第4圖(b)係顯示在搭載有電子零件40之基板30表面安裝有半導體元件50的狀態；第4圖(c)係顯示半導體元件50介以搭接線60而與基板30連接的狀態；第4圖(d)係顯示基板30與半導體元件50利用密封樹脂70而密封的半導體裝置80。另外，第4圖(a)及(b)係對應步驟(ii)，第4圖(c)係對應步驟(iii)，第4圖(d)係對應步驟(iv)。Fig. 4 (a) to (d) are schematic views showing a preferred embodiment of the steps (ii) to (iv). Fig. 4(a) shows the substrate 30 on which the electronic component 40 is mounted, and Fig. 4(b) shows the state in which the semiconductor element 50 is mounted on the surface of the substrate 30 on which the electronic component 40 is mounted; Fig. 4(c) shows The semiconductor device 50 is connected to the substrate 30 via the bonding wires 60. The fourth embodiment (d) shows the semiconductor device 80 in which the substrate 30 and the semiconductor device 50 are sealed by the sealing resin 70. Further, Fig. 4 (a) and (b) correspond to step (ii), Fig. 4 (c) corresponds to step (iii), and Fig. 4 (d) corresponds to step (iv).

在步驟(ii)中，首先，準備第4圖(a)所示之基板30。該種基板30，係與前面所述之第2圖所示的基板30同樣者，且如前面所述將電子零件40搭載在基板30所獲得者。然後，準備如前面所述之第3圖所示的半導體元件固定用薄膜狀接著劑10疊層半導體元件50。In the step (ii), first, the substrate 30 shown in Fig. 4(a) is prepared. The substrate 30 is the same as the substrate 30 shown in FIG. 2 described above, and the electronic component 40 is mounted on the substrate 30 as described above. Then, the semiconductor element 50 is laminated on the film-like adhesive 10 for fixing a semiconductor element as shown in FIG. 3 described above.

其次，如第4圖(b)所示，以在搭載有電子零件40之基板30表面疊層半導體元件固定用薄膜狀接著劑10之表面的方式將半導體元件50安裝在基板30上(步驟(ii))。Then, as shown in FIG. 4(b), the semiconductor element 50 is mounted on the substrate 30 so that the surface of the film-like adhesive 10 for fixing the semiconductor element is laminated on the surface of the substrate 30 on which the electronic component 40 is mounted (step ( Ii)).

作為將該種半導體元件50安裝在基板30上的方法並未特別被限制，可適當地採用能利用薄膜狀之半導體元件固定用接著劑將半導體元件接著在基板或電子零件的習知方法。作為該種安裝方法，可列舉採用一使用具有來自上部之加熱功能之覆晶黏合機的安裝技術之方法、採用具有來自下部之加熱功能之黏晶機的方法、使用貼合機之方法等習知公知之加熱、加壓方法。如此，藉由使用半導體元件固定用薄膜狀接著劑10將半導體元件50安裝在基板30上，即可一面使半導體元件固定用薄膜狀接著劑10追隨因電子零件40所產生的基板上之凹凸，而一面接著基板與半導體元件，如第4圖(b)所示，可全部利用半導體元件固定用薄膜狀接著劑覆蓋半導體元件與基板之間。亦即，藉由使用半導體元件固定用薄膜狀接著劑10，由於可利用半導體元件固定用薄膜狀接著劑10填埋於基板之凹凸，所以不會在基板與半導體元件之間產生空間而可將半導體元件固定在基板。The method of mounting the semiconductor element 50 on the substrate 30 is not particularly limited, and a conventional method of attaching the semiconductor element to the substrate or the electronic component by using a thin film-shaped semiconductor element fixing adhesive can be suitably employed. As such a mounting method, a method using a mounting technique using a flip chip bonding machine having a heating function from the upper portion, a method using a die bonding machine having a heating function from the lower portion, a method using a bonding machine, and the like may be mentioned. Knowing the heating and pressurization methods. By mounting the semiconductor element 50 on the substrate 30 by using the film-like adhesive 10 for fixing the semiconductor element, the film-like adhesive 10 for fixing the semiconductor element can follow the unevenness on the substrate caused by the electronic component 40. On the other hand, as shown in FIG. 4(b), the substrate and the semiconductor element can be covered with the film-like adhesive for fixing the semiconductor element. In other words, by using the film-like adhesive 10 for fixing the semiconductor element, the film-like adhesive 10 for fixing the semiconductor element can be filled in the unevenness of the substrate, so that a space is not formed between the substrate and the semiconductor element. The semiconductor component is fixed to the substrate.

本發明之半導體裝置之製造方法中，將半導體元件50安裝在基板30上時之溫度條件較佳為以半導體元件固定用薄膜狀接著劑10之熔融黏度變成50Pa．s以下(更佳為1至50Pa．s之範圍)之溫度來安裝。在該種溫度條件下，藉由將半導體元件安裝在基板，即可利用半導體元件固定用薄膜狀接著劑一面更有效率地填埋基板上之凹凸而一面將半導體元件固定在基板。另外，滿足該種條件之具體的溫度範圍雖依製造半導體元件固定用薄膜狀接著劑10時所選擇的材料之種類而不同，但是例如在用於前面所述的本發明之半導體元件固定用薄膜狀接著劑之材料為上述接著劑組成物時則較佳為140至180℃左右。In the method for fabricating the semiconductor device of the present invention, the temperature condition when the semiconductor device 50 is mounted on the substrate 30 is preferably such that the melt viscosity of the film-like adhesive 10 for fixing the semiconductor device becomes 50 Pa. Install at a temperature below s (more preferably in the range of 1 to 50 Pa.s). By mounting the semiconductor element on the substrate under such a temperature condition, the semiconductor element can be fixed to the substrate while the unevenness on the substrate is more efficiently filled by the film-like adhesive for fixing the semiconductor element. In addition, the specific temperature range which satisfies the above-mentioned conditions differs depending on the type of material selected when the film-like adhesive 10 for fixing a semiconductor element is used, but is used, for example, in the film for fixing a semiconductor element of the present invention described above. When the material of the adhesive is the above-mentioned adhesive composition, it is preferably about 140 to 180 °C.

又，將半導體元件50安裝在基板30上時之壓力條件雖會依製造所使用之半導體元件固定用薄膜狀接著劑10時所選擇的材料而不同，但是一般較佳為0.1至1kgf/cm2 左右。在上述壓力未滿上述下限時，則有為了要利用半導體元件固定用薄膜狀接著劑填埋因電子零件之凹凸所產生的基板上之凹凸而需要花時間，更且有無法充分地防止空隙之發生的傾向，另一方面，當超出上述上限時，則有無法控制接著劑溢出之傾向。Further, the pressure condition when the semiconductor element 50 is mounted on the substrate 30 differs depending on the material selected for the film-like adhesive 10 for fixing the semiconductor element to be used, but is generally preferably 0.1 to 1 kgf/cm 2 . about. When the pressure is less than the lower limit, it takes time to fill the unevenness on the substrate due to the unevenness of the electronic component by the film-like adhesive for fixing the semiconductor element, and it is not possible to sufficiently prevent the void. On the other hand, when the above upper limit is exceeded, there is a tendency that the overflow of the adhesive cannot be controlled.

其次，在步驟(iii)中，如第4圖(c)所示，介以搭接線60來連接半導體元件50與基板30。作為介以搭接線60來連接該種半導體元件50與基板30的方法並未特別被限制，可適當地採用習知公知之方法，例如，打線接合方式之方法、TAB(捲帶式自動接合，Tape Automated Bonding)方式之方法等。Next, in the step (iii), as shown in Fig. 4(c), the semiconductor element 50 and the substrate 30 are connected via the bonding wires 60. The method of connecting the semiconductor element 50 and the substrate 30 via the bonding wires 60 is not particularly limited, and a conventionally known method can be suitably employed, for example, a wire bonding method, TAB (tape automatic bonding) , Tape Automated Bonding) method, etc.

其次，在步驟(iv)中，如第4圖(d)所示，利用密封樹脂70來密封基板30與半導體元件50以獲得半導體裝置80。作為密封樹脂70並未特別被限制，可適當地使用能用於半導體裝置之製造的公知樹脂。又，作為使用密封樹脂70之方法並未特別被限制，可適當地採用公知之方法。Next, in the step (iv), as shown in Fig. 4(d), the substrate 30 and the semiconductor element 50 are sealed by the sealing resin 70 to obtain the semiconductor device 80. The sealing resin 70 is not particularly limited, and a known resin which can be used for the production of a semiconductor device can be suitably used. Further, the method of using the sealing resin 70 is not particularly limited, and a known method can be suitably employed.

依據該種本發明之半導體裝置之製造方法，由於因電子零件40而產生的基板30上之凹凸可利用半導體元件固定用薄膜狀接著劑10來填埋，所以不會在基板30與半導體元件50之間產生空間而可將半導體元件50固定在基板30，藉此，在抑制容積之狀態下可有效率地製造內藏電子零件40的半導體裝置80。According to the method of manufacturing a semiconductor device of the present invention, since the unevenness on the substrate 30 due to the electronic component 40 can be filled with the film-like adhesive 10 for fixing the semiconductor element, the substrate 30 and the semiconductor device 50 are not provided. The space between the semiconductor elements 50 can be fixed to the substrate 30, whereby the semiconductor device 80 incorporating the electronic component 40 can be efficiently manufactured while suppressing the volume.

(半導體裝置)(semiconductor device)

其次，就本發明之半導體裝置加以說明。亦即，本發明之半導體裝置，其特徵為具備：半導體元件、基板、及接著上述半導體元件與基板的上述本發明之半導體元件固定用薄膜狀接著劑。Next, a semiconductor device of the present invention will be described. In other words, the semiconductor device of the present invention includes a semiconductor element, a substrate, and a film-like adhesive for fixing the semiconductor element of the present invention, which is followed by the semiconductor element and the substrate.

以下，一面參照圖式而一面就本發明之半導體裝置的較佳之一實施方式加以說明。另外，在以下之說明及圖式中，相同或相當之要素附記相同之元件符號，且省略其重複之說明。Hereinafter, a preferred embodiment of the semiconductor device of the present invention will be described with reference to the drawings. In the following description and the drawings, the same or equivalent elements are denoted by the same reference numerals, and the description thereof will not be repeated.

第5圖係顯示本發明半導體裝置較佳之一實施方式的概略縱剖面圖。第5圖所示的本發明之半導體裝置80，基本上具備半導體元件50、基板30、及接著上述半導體元件與基板的上述本發明之半導體元件固定用薄膜狀接著劑10。又，在第5圖所示之半導體裝置中，在基板30上搭載有電子零件40。更且，基板30與半導體元件50介以搭接線60而連接著。又，在第5圖所示之半導體裝置中，半導體元件50、基板30、及接著上述半導體元件與基板的上述本發明之半導體元件固定用薄膜狀接著劑10，係由密封樹脂70所覆蓋。Fig. 5 is a schematic longitudinal cross-sectional view showing a preferred embodiment of the semiconductor device of the present invention. The semiconductor device 80 of the present invention shown in FIG. 5 basically includes a semiconductor element 50, a substrate 30, and a film-like adhesive 10 for fixing the semiconductor element of the present invention which is followed by the semiconductor element and the substrate. Moreover, in the semiconductor device shown in FIG. 5, the electronic component 40 is mounted on the substrate 30. Further, the substrate 30 and the semiconductor element 50 are connected via a bonding wire 60. Further, in the semiconductor device shown in FIG. 5, the semiconductor element 50, the substrate 30, and the film-like adhesive 10 for fixing the semiconductor element of the present invention which follows the semiconductor element and the substrate are covered with a sealing resin 70.

有關用於該種半導體裝置之半導體元件固定用薄膜狀接著劑10、基板30、電子零件40、半導體元件50等係如同前面所述，可按照用途適當地選擇基板或電子零件等來配置。又，該種半導體裝置之製造方法亦如同前面所述。The film-like adhesive 10 for semiconductor element fixing, the substrate 30, the electronic component 40, the semiconductor element 50, and the like for use in such a semiconductor device are arranged as described above, and can be appropriately selected according to the use, such as a substrate or an electronic component. Moreover, the manufacturing method of such a semiconductor device is also as described above.

該種半導體裝置，由於係使用上述本發明之半導體元件固定用薄膜狀接著劑，而可在抑制容積之狀態下有效率地內藏電子零件40，所以可特別適合地用在行動電話等被要求小型化之用途的電子機器等中。In the semiconductor device of the present invention, since the electronic component 40 can be efficiently incorporated in a state in which the volume is suppressed by using the film-like adhesive for fixing the semiconductor element of the present invention, it can be suitably used for a mobile phone or the like. In electronic equipment for miniaturization purposes.

(實施例)(Example)

以下，雖係根據實施例更具體地說明本發明，但是本發明並非被限定於以下之實施例。Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to the following examples.

(實施例1)(Example 1)

首先，使用軋輥貼合機，在厚度150 μ m之半導體功能面之背面，以溫度50℃、荷重0.3MPa之條件，配置厚度130 μ m之接著劑用薄膜(新日鐵化學製，商品名「NEX－130C」)。First, a film for an adhesive having a thickness of 130 μm was placed on the back surface of a semiconductor functional surface having a thickness of 150 μm at a temperature of 50 ° C and a load of 0.3 MPa using a roll bonding machine (Nippon Steel Chemical Co., Ltd., trade name "NEX-130C").

其次，使用軋輥貼合機，在被配置於厚度150 μ m之半導體功能面之背面的上述接著劑用薄膜之表面，以溫度50℃、荷重0.3MPa之條件，更貼合厚度130 μ m之3片接著劑用薄膜(新日鐵化學製，商品名「NEX－130C」)。如此所獲得的半導體元件固定用薄膜狀接著劑之厚度為520 μ m。另外，用於溫度50℃之上述接著劑用薄膜的材料之熔融黏度係為17000Pa．s，且在所獲得的半導體元件固定用薄膜狀接著劑中，看不到接著劑用薄膜之界面。Next, using a roll bonding machine, the surface of the above-mentioned adhesive film disposed on the back surface of the semiconductor functional surface having a thickness of 150 μm was further bonded to a thickness of 130 μm at a temperature of 50 ° C and a load of 0.3 MPa. A film for three adhesives (manufactured by Nippon Steel Chemical Co., Ltd., trade name "NEX-130C"). The thickness of the film-form adhesive for fixing the semiconductor element thus obtained was 520 μm. In addition, the melting viscosity of the material for the above-mentioned film for an adhesive at a temperature of 50 ° C is 17,000 Pa. In the obtained film-like adhesive for fixing a semiconductor element, the interface of the film for an adhesive is not observed.

之後，使用軋輥貼合機，在半導體元件固定用薄膜狀接著劑面貼合切割薄膜(琳得科(Lintec)製，商品名「D－11」)之後，利用切割機將半導體元件個片化，藉以獲得對背面供給有接著劑之半導體元件固定用薄膜狀接著劑疊層半導體元件。After that, a dicing film (manufactured by Lintec, trade name "D-11") was bonded to a film-like adhesive surface for fixing a semiconductor element using a roll bonding machine, and then the semiconductor device was sliced by a cutter. A semiconductor element-embedded semiconductor element for fixing a semiconductor element to which an adhesive is applied to the back surface is obtained.

其次，在使用FR－5基板(日立化成公司製之商品名「MCL－E－679F」)而製作成的印刷配線板上之預定端子印刷銲錫糊，且在與印刷完銲錫糊之端子對應的部位利用SMT糊暫時固定長邊600 μ m、短邊300 μ m之電阻元件(以下，稱為「電子零件」)30個之後，置入回銲爐中，使電子零件與印刷配線板電連接，以使電子零件搭載在基板上。此時之電子零件的高度，平均為230 μ m。Next, a solder paste is printed on a predetermined terminal on a printed wiring board produced by using an FR-5 substrate (trade name "MCL-E-679F" manufactured by Hitachi Chemical Co., Ltd.), and corresponds to the terminal of the printed solder paste. 30 parts of a resistance element (hereinafter referred to as "electronic part") having a long side of 600 μm and a short side of 300 μm are temporarily fixed by the SMT paste, and then placed in a reflow furnace to electrically connect the electronic component to the printed wiring board. In order to mount the electronic components on the substrate. The height of the electronic parts at this time is an average of 230 μm.

然後，一面將半導體元件固定用薄膜狀接著劑疊層半導體元件加熱至160℃而一面以荷重0.06MPa之條件，安裝在搭載有電子零件之基板上。此時，利用上述測定方法所測定的半導體元件固定用薄膜狀接著劑之熔融黏度為30Pa．s。如此獲得一種利用上述半導體元件固定用薄膜狀接著劑，將半導體元件固定在搭載有電子零件之基板上，且在搭載有電子零件之基板上安裝半導體元件的構造物。在對如此所獲得的構造物，進行IR觀察與剖面觀察時，可確認在所獲得的構造物中並無空隙。又，在該種構造物中，可確認因上述電子零件所產生的基板上之凹凸可利用上述半導體元件固定用薄膜狀接著劑來填埋。Then, the thin film-form adhesive laminated semiconductor element for fixing a semiconductor element was heated to 160 ° C and mounted on a substrate on which an electronic component was mounted under a load of 0.06 MPa. In this case, the film-like adhesive for fixing a semiconductor element measured by the above measurement method has a melt viscosity of 30 Pa. s. In this way, a structure in which a semiconductor element is fixed to a substrate on which an electronic component is mounted and a semiconductor element is mounted on a substrate on which an electronic component is mounted is obtained. When IR observation and cross-sectional observation were performed on the structure obtained as described above, it was confirmed that there was no void in the obtained structure. Moreover, in such a structure, it was confirmed that the unevenness on the substrate due to the electronic component can be filled by the film-like adhesive for fixing the semiconductor element.

其次，使用如此所獲得的構造物，介以搭接線來電連接半導體元件與上述印刷電路基板，且利用密封樹脂來密封。雖然已對如此所獲得的半導體裝置進行動作確認但是可確認並沒有問題。Next, using the structure thus obtained, the semiconductor element and the printed circuit board were electrically connected by a tap wire, and sealed with a sealing resin. Although the operation of the semiconductor device thus obtained was confirmed, it was confirmed that there was no problem.

從該種結果亦可明白，本發明之半導體元件固定用薄膜狀接著劑中，可形成習知半導體元件固定用接著劑中所無之厚度的薄膜狀接著劑，且可確認能一面利用上述半導體元件固定用薄膜狀接著劑填埋因上述電子零件所產生的基板上之凹凸而且一面無空隙地接著基板與半導體元件。In the film-like adhesive for fixing a semiconductor element of the present invention, it is also possible to form a film-like adhesive having a thickness which is not included in the conventional semiconductor element fixing adhesive, and it is confirmed that the semiconductor can be used while The film-like adhesive for fixing the component fills the substrate and the semiconductor element without any gaps due to the unevenness on the substrate generated by the electronic component.

(產業上之可利用性)(industrial availability)

如以上說明般，依據本發明，可提供一種半導體元件固定用薄膜狀接著劑、使用該接著劑之半導體裝置及該半導體裝置之製造方法，僅管其為半導體元件固定用薄膜狀接著劑，亦可一面將其厚度作得比設於基板上之電子零件的厚度還厚而一面充分地防止空隙(void)之發生，而且可利用該半導體元件固定用薄膜狀接著劑充分地填埋因設置於基板上之電子零件的厚度而在基板與半導體元件之間產生的空間，可既有效率且確實地將半導體元件接著在具有凹凸之基板上。As described above, according to the present invention, it is possible to provide a film-like adhesive for fixing a semiconductor element, a semiconductor device using the same, and a method for producing the semiconductor device, which is a film-like adhesive for fixing a semiconductor element, The thickness of the electronic component provided on the substrate can be sufficiently thick to prevent the occurrence of voids, and the film-like adhesive for fixing the semiconductor element can be sufficiently filled. The space created between the substrate and the semiconductor element by the thickness of the electronic component on the substrate can efficiently and surely place the semiconductor component on the substrate having the unevenness.

因而，本發明之半導體元件固定用薄膜狀接著劑，由於可一面防止空隙之發生而一面有效率地將半導體元件接著在具有凹凸之基板上，所以作為謀求半導體裝置之小型化的半導體元件固定用薄膜狀接著劑很有用。Therefore, the film-like adhesive for fixing a semiconductor element of the present invention can effectively prevent the semiconductor element from being attached to the substrate having the unevenness while preventing the occurrence of the void, and therefore, it is used for fixing the semiconductor device for miniaturization of the semiconductor device. Film-like adhesives are useful.

10．．．半導體元件固定用薄膜狀接著劑10. . . Film-like adhesive for fixing semiconductor components

20．．．接著劑用薄膜20. . . Film for subsequent agent

21．．．接著劑用薄膜之界面twenty one. . . Interface for film

30．．．基板30. . . Substrate

40．．．電子零件40. . . Electronic parts

50．．．半導體元件50. . . Semiconductor component

50a．．．半導體元件之背面50a. . . Back side of semiconductor components

60．．．搭接線60. . . Wiring

70．．．密封樹脂70. . . Sealing resin

80．．．半導體裝置80. . . Semiconductor device

第1圖係顯示半導體元件固定用薄膜狀接著劑構成較佳之一實施方式的概略縱剖面圖。Fig. 1 is a schematic longitudinal cross-sectional view showing a preferred embodiment of a film-like adhesive for fixing a semiconductor element.

第2圖係顯示用於本發明之基板較佳之一實施方式的概略縱剖面圖。Fig. 2 is a schematic longitudinal cross-sectional view showing a preferred embodiment of a substrate used in the present invention.

第3圖係顯示半導體元件固定用薄膜狀接著劑疊層半導體元件較佳之一實施方式的概略縱剖面圖。Fig. 3 is a schematic longitudinal cross-sectional view showing an embodiment of a film-form adhesive-layered semiconductor device for fixing a semiconductor element.

第4圖(a)至(d)係顯示本發明半導體裝置之製造方法較佳之一實施方式的步驟概略圖。Fig. 4 (a) to (d) are schematic diagrams showing the steps of a preferred embodiment of the method for fabricating the semiconductor device of the present invention.

第5圖係顯示本發明半導體裝置較佳之一實施方式的概略縱剖面圖。Fig. 5 is a schematic longitudinal cross-sectional view showing a preferred embodiment of the semiconductor device of the present invention.

10．．．半導體元件固定用薄膜狀接著劑10. . . Film-like adhesive for fixing semiconductor components

20．．．接著劑用薄膜20. . . Film for subsequent agent

21．．．接著劑用薄膜之界面twenty one. . . Interface for film

Claims (4)

一種半導體元件固定用薄膜狀接著劑，其特徵在：係由在140℃之熔融黏度為50Pa˙s以下之材料所構成的接著劑用薄膜疊層複數片而成者，且厚度為200μm至2000μm；其中，上述材料係為含有(A)氧化矽、(B)苯氧基樹脂、(C)縮水甘油醚型環氧樹脂、及(D)環氧樹脂硬化劑，而(A)氧化矽之含量為50至80質量%，且(B)苯氧基樹脂與(C)縮水甘油醚型環氧樹脂之重量比((B)苯氧基樹脂/(C)縮水甘油醚型環氧樹脂)為0.02至1之範圍的接著劑用組成物。 A film-like adhesive for fixing a semiconductor element, which is obtained by laminating a plurality of sheets of an adhesive film made of a material having a melt viscosity of not more than 50 Pa ̇s at 140 ° C, and having a thickness of 200 μm to 2000 μm. Wherein the above materials are (A) cerium oxide, (B) phenoxy resin, (C) glycidyl ether type epoxy resin, and (D) epoxy resin hardener, and (A) cerium oxide The content is 50 to 80% by mass, and (B) the weight ratio of the phenoxy resin to the (C) glycidyl ether type epoxy resin ((B) phenoxy resin / (C) glycidyl ether type epoxy resin) The composition for the adhesive of the range of 0.02 to 1 is used. 如申請專利範圍第1項之半導體元件固定用薄膜狀接著劑，其中，於上述材料之熔融黏度在30000Pa˙s以下之溫度以上且上述材料之熱硬化開始溫度以下之溫度範圍內的溫度中，疊層上述複數片接著劑用薄膜者。 The film-like adhesive for fixing a semiconductor element according to the first aspect of the invention, wherein the melt viscosity of the material is at a temperature equal to or higher than a temperature of 30,000 Pa ̇ s or less and a temperature within a temperature range below a thermal hardening start temperature of the material, A film for laminating the above plurality of adhesives is laminated. 一種半導體裝置之製造方法，其特徵在：使用申請專利範圍第1至2項中任一項之半導體元件固定用薄膜狀接著劑，將半導體元件接著在基板。 A method of manufacturing a semiconductor device, comprising: using a film-like adhesive for fixing a semiconductor element according to any one of claims 1 to 2, wherein the semiconductor element is subsequently attached to the substrate. 一種半導體裝置，其特徵在具備：半導體元件、基板、及用以接著上述半導體元件與基板的申請專利範圍第1至2項中任一項之半導體元件固定用薄膜狀接著劑。 A semiconductor device comprising: a semiconductor element, a substrate, and a film-like adhesive for fixing a semiconductor element according to any one of claims 1 to 2, wherein the semiconductor element and the substrate are used.
TW095130217A 2005-08-29 2006-08-17 Filmy adhesive for fixing semiconductor element, semeconductor device using the same and manufacturing method of semiconductor device TWI384592B (en)

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JP5828881B2 (en) * 2013-12-24 2015-12-09 日東電工株式会社 Adhesive film, dicing die bond film, semiconductor device manufacturing method, and semiconductor device
JP5901715B1 (en) * 2014-09-05 2016-04-13 古河電気工業株式会社 Film adhesive, semiconductor package using film adhesive, and manufacturing method thereof
JP7127680B2 (en) * 2018-03-06 2022-08-30 昭和電工マテリアルズ株式会社 Semiconductor device and its manufacturing method

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