TWI314235B - Pixel array structure, active element array substrate and repairing method thereof - Google Patents

Description

1314235 V. Technical Description of the Invention (1) The present invention relates to a halogen structure, an active device array substrate, and a repairing method thereof, and more particularly to a laser beam incident from a rear surface of a substrate, A complete halogen structure, an active device array substrate, and a repair method for the color filter film are maintained. [Prior Art] A thin film transistor liquid crystal display panel (TFT LCD pane 1 ) is mainly composed of a thin film transistor array substrate (Thin Film Transistor array substrate), a color filter array substrate and a liquid crystal layer, wherein the thin film transistor array substrate is composed of a plurality of sea-shell transistors arranged in an array, and one of the corresponding ones of each of the thin film transistors The element electrode (P i X e 1 e 1 ectrode ) is composed of a jin. In addition to the above-mentioned conventional thin film transistor liquid crystal display panel, there is currently a technology for fabricating a thin film transistor liquid crystal display panel, which is characterized in that a color filter film is directly formed on a thin film transistor array substrate (Color filter) On array, CO?-), and one of its advantages is to increase the panel aperture rate. Therefore, the thin film transistor liquid crystal display panel in which the color filter film is integrated on the thin film transistor array substrate is currently applied to a thin and high-resolution notebook computer panel or a liquid crystal television, a high-order liquid crystal monitor, and the like. Great choice. However, in the process of the thin film transistor array substrate, the wires around the thin film transistor or the thin film transistor are inevitably broken, or each

12201twf.ptd Page 8 1314235 V. INSTRUCTIONS (2) There should be poor contact between the conductive layers at the electrical connection, but a short circuit should occur at the insulation. When the above defect (D e f e c t) occurs, a repair operation (Repair) is required. FIG. 1 is a schematic view showing a repair method of an active device array substrate in which a color filter film is integrated. In Fig. 1, a cross-sectional view of a portion of the active device array substrate that needs to be repaired will be described as an example. Referring to FIG. 1 , the active device array substrate 100 is shown in the figure by a substrate 1 10 , a conductor layer 1 2 (Γ, a gate dielectric layer 1 30, a protective layer 14). 0 ' - a color filter film 150, a flat layer 1 60 and a pixel electrode 1 70. Among them, the conductor layer 120 is broken in the region A1 and needs to be repaired. The conventional repair method will be A laser beam 50 is incident from the front side of the substrate 110 and is focused on the area A1 to reconnect the break of the conductor layer 120. However, the laser beam 50 of the conventional repair method is focused on the area • A 1 Previously, the color filter film 150 was damaged, and the color filter film 150 was damaged. Therefore, the conventional repair method has the following disadvantages when applied to an active device array substrate incorporating a color filter film: (1) The laser beam is incident on the front side of the substrate, destroying the color filter film, and causing light leakage. (2) If the purpose of the repairing action is to cut off the line of the active device array substrate, a higher energy thunder is required. Shooting a beam will destroy a wider range of colors The filter film is (3) the surface of the liquid crystal display panel is unclear due to the destruction of the color filter film, and the driving operation of the liquid crystal display panel is not easy.

12201twf.ptd Page 9 1314235 V. SUMMARY OF THE INVENTION (3) SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a pixel structure, an active device array substrate, and a repairing method thereof, which are suitable for securing an active device array substrate. After the repair of the prime structure, the color filter film can remain intact. Based on the above, the present invention proposes a repair method, which is suitable for integrating an active device array substrate having a color filter film. The active device array substrate is mainly composed of a substrate, an active device array, and a color filter film. The substrate has a front surface and a back surface, and the active device array and the color filter film are disposed on the front surface of the substrate. The repairing method of the present invention causes a laser beam to be incident from the back side of the substrate for performing a laser repairing action. In addition, the repairing action is, for example, cutting off the lines in the active device array, or soldering the lines in the active device array. When the laser beam is subjected to a single repair, for example, in an area of 2 μm 2 μm, the power and column of the laser beam are between 0.3 microjoules to 0.52 microjoules. When the laser beam is repaired twice, for example, in an area of 2 μm 2 μm, the power of the laser beam is, for example, between 0.17 microjoules to 0.17 microjoules. When the laser beam is subjected to a single repair, for example, in an area of 4 micrometers by 4 micrometers, the power of the laser beam is, for example, between 0.14 microjoules to 0.18 microjoules. When the laser beam is repaired twice, for example, in an area of 4 micrometers by 4 micrometers, the power of the laser beam is, for example, between 0.99 microjoules to 0.13 microjoules. Based on the above object, the present invention further provides a halogen structure. This halogen structure has a repair area after a laser repair action. This halogen structure

12201twf.ptd Page 10 1314235 Five ★ Invention Description (4) Mainly consists of a slab, a sweep, a wiring, a data wiring, an active component, a color filter film and a pixel electrode. Among them, the scan wiring and the data wiring are disposed on the substrate. The active component is disposed adjacent to the substrate disposed at the intersection of the scan wiring and the data wiring, and is electrically connected to the scan wiring and the data wiring. The color filter film is disposed above the substrate, and the portion of the color filter film adjacent to the repaired region is intact. The pixel electrode is disposed on the corresponding color filter film above the substrate and electrically connected to the active component. Based on the above objects, the present invention further proposes an active device array substrate. The active device array substrate has at least one repaired region through a laser repairing action. The active device array substrate is mainly composed of a substrate, a plurality of sweeping cat wirings, a plurality of data wirings, a plurality of active components, a color filter film, and a plurality of pixel electrodes. Among them, the scan wiring and the data wiring are disposed on the substrate, and the scan wiring and the data wiring system separate the active device array substrate into a plurality of halogen regions. The active component is disposed adjacent to the substrate disposed at the intersection of the scan wiring and the data wiring, and is electrically connected to the scan wiring and the data wiring. The color filter film is disposed above the substrate and is divided into a plurality of blocks corresponding to the respective pixel regions, and the portion of the color filter film adjacent to the repair region is intact. The pixel electrodes are disposed above the substrate and respectively correspond to the color filter films on the respective pixel regions, and are electrically connected to the active device. In summary, in the halogen structure, the active device array substrate and the repairing method thereof according to the preferred embodiment of the present invention, since the laser beam is incident from the back surface of the substrate to perform the laser repairing operation, the color filter can be avoided. Light film.

12201twf.ptd Page 11 1314235 V. Description of the invention (5) Therefore, the color filter film can be kept intact near the repaired area, and the yield of the panel is improved. The above and other objects, features, and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] FIG. 2 is a schematic view showing a repair method applied to an active device array substrate incorporating a color filter film according to a preferred embodiment of the present invention. In the 篆 and 2 drawings, only a cross-sectional schematic view of a portion of the active device array substrate to be repaired will be described as an example. Referring to FIG. 2, the active device array substrate 200 is shown in the figure by a substrate 2 10, a conductor layer 2 2 0, a gate dielectric layer 230, a protective layer 240, and a color. The filter film 250, a flat layer 260 and a halogen electrode 270 are formed. The substrate 210 has a front surface S1 and a back surface S2, and the color filter film 250 and other material layers are disposed on the front surface of the substrate 210. The conductor layer 220 is broken, for example, in the region A2, and needs to be repaired. The repair method of the preferred embodiment of the present invention causes a laser beam 50 to be incident from the back surface S2 of the substrate 210 and to focus on the area A 2 for laser repairing operations such as soldering. In addition, when the laser beam 50 is subjected to a single repair, for example, in an area of 2 μm 2 μm, the power is, for example, preferably between 0.3 μJ and 0.5 μm. When the laser beam 50 is repaired twice in a row, for example, in a range of 2 micrometers by 2 micrometers, the power is preferably between 0.17 microjoules and 0. 27 microjoules, for example. When the laser beam 50 is subjected to a single repair, for example, in an area of 4 micrometers by 4 micrometers, the power is, for example, between 0.14 micrometers.

12201tyf.ptd Page 12 1314235 __ V. Description of invention (6) 'Joule to 0. 1 8 microjoules is better. When the laser beam 50 is subjected to two consecutive correction days, for example, in an area of 4 micrometers by 4 micrometers, the power is preferably between 0.99 microjoules and 0.13 microjoules, for example. Of course, the repairing method of the preferred embodiment of the present invention is not limited to the application. When the conductor layer is broken, other application embodiments will be described below, but these embodiments are for illustrative purposes only and are not limiting. Fig. 3A is a top view of the halogen structure of the preferred embodiment of the present invention, and Fig. 3B is a schematic cross-sectional view of the halogen structure of Fig. 3A along I - 。. Referring to FIG. 3A and FIG. 3B together, the pixel structure 300 of the embodiment is, for example, a substrate 3 10 , a scan wiring 3 2 0 , a gate dielectric layer 330 , and a data wiring 340 . A capacitor electrode 345, an active component 350, a protective layer 306, a color filter film 307, and a halogen electrode 390. The scan wiring 320 and the data wiring 34 0 are disposed on the substrate 31 0 0. The active component 350 is disposed adjacent to the substrate 3 1 0 disposed at the intersection of the scan wiring 3 2 0 and the data wiring 3 4 0 , and is electrically connected to the scan wiring 3 2 0 and the data wiring 3 4 0 , and the active component 3 5 0 is, for example, a thin film transistor. The color filter film 307 is disposed above the substrate 310. The halogen electrode 390 is disposed above or below the color filter film 370 (in the third diagram, the bismuth electrode 390 is disposed above the color filter film 370). And electrically connected to the active component 350. The capacitor electrode 345 is disposed, for example, above the scan wiring 320. Further, the gate dielectric layer 330 is disposed, for example, on the substrate and covers the scan wiring 3200, and the data wiring 340 and the capacitor electrode 345 are disposed, for example, on the gate dielectric layer 303. The protective layer 360 is, for example, disposed on the substrate and covers the scan

12201twf.ptd Page 13 1314235 V. Invention description (7) Wiring 3 2 0, data order n and color filter film 37, 2. Capacitor electrode 345 and active component 3 5 0 ' 3 9 0 and color calendering μ ^ For example, it is disposed on the protection layer 360. The pixel electrode here includes, for example, a flat layer 380. Counted by contact = full 〇. In the middle, the capacitor electrode 345 is designed to have a common shape of the wiring 3 2 0. W is reversely pressed to the pixel electrode 390, and is often in contact with the scanning problem to form a window: the storage is lost. However, the repair method of the preferred embodiment of the invention is as follows: j1: 匕m is soldered with the mesh wiring 320, so that the capacitance is 325, and the capacitor electrode 345 is swept to the storage capacitor. The electric electrode 45 can form a beam 5 together with the halogen electrode 390, and the repair method of the preferred embodiment of the laser beam 50 is not passed through the portion of the color filter film adjacent to the repairing area A3. It can be paid by value, 3⁄4 is due to Ray 3 7 0 'thus color tantalizing film 3 7 〇. Of course, in the preferred embodiment of the laser repairing operation, the present invention performs a laser trimming action of cutting or other processing. 4 is a top plan view of an active device array substrate in accordance with a preferred embodiment of the present invention. Referring to FIG. 3A and FIG. 4 together, the active device array substrate 400 of the present embodiment has at least one repaired area A 4 through a laser repairing operation. The active device array substrate 400 is mainly composed of a plurality of arrays of pixel structures 300 as shown in FIG. 3A. Among them, all the pixel structures 300 are shared substrates 3 10 . The pixel structure 300 of the same column shares a scan wiring 3 2 0, and the monolithic structure 300 0 of the same row shares a data wiring.

12201twf.ptd Page 14 1314235_ V. DESCRIPTION OF THE INVENTION (8) Since the laser beam 50 used in the laser repairing operation does not pass through the color filter film 370, the color filter film 307 is adjacent to the repairing area A 4 The parts are complete. In summary, the halogen structure, the active device array substrate and the repairing method thereof according to the preferred embodiment of the present invention have the following advantages: (1) The laser beam used in the repairing method is incident from the back surface of the substrate, and color filtering can be maintained. The integrity of the layers of material above the film and other repair areas to avoid light leakage or other defects. (2) Even if the repairing action is to cut off the line of the active device array substrate, a higher energy laser beam is required, which does not cause damage to a wider range of color filter films. (3) After the morphological structure of the active device array structure is repaired by the repairing method of the present invention, the color filter film can maintain its integrity, thereby facilitating the driving operation of the liquid crystal display panel. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

12201twf.ptd Page 15 1314235 Brief Description of the Drawings Fig. 1 is a schematic view showing a repair method of an active device array substrate in which a color filter film is integrated. 2 is a schematic view showing a repair method applied to an active device array substrate incorporating a color filter film according to a preferred embodiment of the present invention. Figure 3A is a top plan view of a pixel structure in accordance with a preferred embodiment of the present invention. Fig. 3B is a schematic cross-sectional view of the halogen structure along the I - Γ of Fig. 3A. 4 is a top plan view of an active device array substrate in accordance with a preferred embodiment of the present invention. [Illustration Description] 50: Laser beam 100 Active device array substrate 110 Substrate 120 Conductor layer 130 Gate dielectric layer 140 Protective layer 1 50 Color filter film 160 Flat layer 170 Alizarin electrode A1 : Area 200, 400: Active Element array 210 '310 : substrate 220 : conductor layer

12201twf.ptd Page 16 1314235 Schematic description

230 '330 gate dielectric layer 240 '360 protective layer 250 '370 color filter film 260 ' 380 flat layer 270, 390 halogen electrode 300 : halogen structure 320 • sweeping seed wire 340 : data wiring 345 : capacitor electrode 350 : Active component S1 : Front side S2 : Back side A2 : Area A3, A4 : Repair area W1 : Contact window 12201twf.ptd Page 17

Claims (1)

1314235 Patent Application No. 1. A repairing method for an active 7L device array substrate incorporating a color filter film. The active device array substrate comprises at least a substrate, an active device array and the color filter film, the substrate having a front side and a front surface. A rear surface and the active device array and the color filter film are disposed on the front surface of the substrate. The repairing method causes a laser beam to be incident from the back surface of the substrate to perform a laser repairing operation. 2. The repairing method of claim 1, wherein the repairing action comprises cutting off a line in the array of active components. 3. The repairing method of claim 1, wherein the repairing action comprises welding a line in the array of active components. 4. The repair method described in claim 1, wherein the laser beam is repaired in a single area of 2 micrometers and 2 micrometers, and the power of the laser beam is between 〇·3 micrometers. Joules to 0. 52 microjoules. 5. The repairing method of claim 1, wherein the laser beam is repaired twice with an area of 2 micrometers '2 micrometers, and the power of the laser beam is between 微. 17 microjoules to 〇. 27 microjoules. The singularity of the laser beam is 0. 1 4 microjoules. The power beam of the laser beam is 0. 1 4 microjoules. To 〇. 1 8 microjoules. The repair method described in claim 1, wherein the laser beam is repaired twice with an area of 4 micrometers and 4 micrometers, and the power of the beam is between 〇. 〇9 Microjoules to 〇. 13 microjoules. / 8. - Spectral structure structure The pixel structure has a repairing area through a laser repairing action, and the pixel structure includes at least: Sixth, apply for the special brake range - the substrate; > scan wiring 'on the substrate; > data wiring, is placed on the substrate; / active components, adjacent to the scan wiring and the data wiring intersection The substrate is electrically connected to the scan line and the data line, and a gland-color light-transmissive film is disposed above the substrate, and the color filter is adjacent to the #j_~/U patch area. The portion is complete; and the halogen electrode is disposed on the substrate corresponding to the color filter film electrically connected to the active component; the color scan is in the scan wiring, the data wiring, the active component, The color enamel and the halogen electrode share the substrate. The moving element is the elemental structure described in item 8 of the patent scope, wherein the main J 〇 includes a thin film transistor. The gate dielectric as described in claim 8 of the patent application scope further includes a wiring rear layer disposed on the substrate and covering the scan wiring, and the data ', j is disposed in the gate dielectric On the floor. The protective layer, such as the pixel structure described in claim 8, further comprising: and the 'disposed on the substrate and covering the scan wiring and the data wiring. An active device, wherein the color filter film is disposed on the protective layer, and the pixel structure according to claim 8 of the patent application, further comprising a color filter phosphine on the flat color I And the halogen electrode system configuration 1314235 VI. Scope of Application for Patent Application: --- 1 3. The color filter and light film system described in the Shenqing patent scope item are disposed on the pixel electrode. Eight in the shirt 14. The moving element array substrate 'The active element array base flaw has been repaired by a laser to repair the ancient 5, and the ^ ^ 卞 夕 J J storm board system has at least one repair area, the initiative The component display substrate comprises at least: a substrate; a plurality of broom wires disposed on the substrate; a plurality of data wires disposed on the substrate, the scan wires and the data wires being the active device array substrate a plurality of 蚩 regions are separated; — a plurality of active components are disposed adjacent to the substrate disposed at the intersection of the scan wires and the data wires ′ and electrically connected to the scan wires 盥 the data wires;彩色 a color light-emitting film disposed above the substrate, the color filter film is divided into a plurality of blocks corresponding to the pixel regions, and a portion of the color filter film adjacent to the repair region is intact; And a plurality of pixel electrodes disposed on the substrate and respectively corresponding to the color filter film above the halogen regions, and electrically connected to the active components; wherein The scan lines, the data lines, the active elements, the color filter film, and the pixel electrodes share the substrate. 1 5 - An active device array substrate as described in claim 14 wherein the active devices comprise thin film transistors. 1 6. Active element array base as described in claim 14 Page 20 1314235 6. The patent application board further includes a gate dielectric layer disposed on the substrate and covering the scan wires, and the data wiring layers are disposed on the gate dielectric layer. The active device array substrate of claim 14, further comprising a protective layer disposed on the substrate and covering the scan wires, the data wires, and the active components, and A color filter film is disposed on the protective layer. 18. The active device array substrate of claim 14, further comprising a flat layer disposed on the color filter film, and the halogen electrodes are disposed on the planar layer. The active device array substrate of claim 14, wherein the color filter film is disposed on the pixel electrodes. Page 21