TWI287835B - Bonding sheet, semiconductor and method of manufacturing same - Google Patents

Abstract

A bonding sheet having an adhesive layer and a base layer is disclosed, wherein a bonding force between the adhesive layer and the base layer is controlled by irradiation of radiant rays, and the adhesive layer comprises the following components: (a) thermoplastic resin, (b) thermal polymeric component, and (c) compound that grows base while irradiated by radiant rays. The bonding sheet of the present invention has excellent bonding force which stops scattering of the semiconductor element while dicing, and later, with the irradiation of radiant rays, the bonding force between the adhesive layer and the base layer may be adjusted to a milder degree that will not injure each element while picking them up.

Description

1287835 Ministry of Economic Affairs Intellectual Property Office Employees Consumer Cooperatives Printing 1 A7 V. INSTRUCTION DESCRIPTION (i) [Technical Field] The present invention relates to a bonding sheet, a semiconductor device using the bonding sheet, and a method of manufacturing the same. [Background Art] Conventionally, a semiconductor paste is bonded to a support member for carrying a semiconductor element, and a silver paste is mainly used. However, in recent years, with the miniaturization and high performance of semiconductor components, the supporting members to be used have also been required to be miniaturized and densified. With respect to such a requirement, the silver paste may fail to meet the above requirements due to the poor condition of the wire bonding due to the bleed or the inclination of the semiconductor element, the difficulty in controlling the film thickness of the bonding layer, and the occurrence of voids in the bonding layer. . Therefore, in order to meet the above requirements, film adhesives [film adhesive] have been gradually used in recent years. This film-like bonding agent is used in a single-piece attachment method or a wafer back-side attachment method. In the case of manufacturing a semiconductor device using a thin dielectric bonding agent of a monolithic attachment method of the former, a reel-shaped bonding film is cut into a single piece by cutting or drilling, and this sheet is The sheet is joined to the branch member. Then, a monolithized semiconductor element is formed by a wafer dicing step, and bonded to the above-mentioned support member with a film-like bonding agent to manufacture a supporting member with a semiconductor 7G member. Then, it is necessary to obtain a semiconductor device by using a bonding step, a packaging step, or the like. However, since the film-like joining method of the above-described single-piece attaching method is used, since it is necessary to have a dedicated assembling device that cuts out the joining thinning and is joined to the supporting member, the problem of the improvement is 313968 (please Read the phonetic transcription on the back? Please fill out this page again}

1287835 V. Description of Invention (In the case of manufacturing a semiconductor device using the film-like bonding agent of the wafer backside bonding method of the Ministry of Economic Affairs, the Intellectual Property Office of the Intellectual Property Office, first attaching to the back side of the semiconductor wafer After attaching the dicing tape to the other surface of the film-like bonding agent, the semiconductor device is diced by dicing from the wafer. The semiconductor component of the bonding agent is pick-up and bonded to the supporting member. Then, the semiconductor device is heated, hardened, wire bonded, etc. to obtain a semiconductor device. In the film-like bonding agent, since the semiconductor element with the film-like bonding agent is bonded to the supporting member, the conventional silver paste can be directly used as it is without the need to separate the film-like bonding agent (Film sing). Silver paste) assembly device, or a part of a device such as a modified additional hot plate. Therefore, the assembly method using a film-like bonding agent This is a method for lowering the manufacturing cost, and has attracted attention. The dicing tape used in conjunction with the film-like bonding agent on the back side of the wafer can be roughly classified into a pressure-sensitive type and a uv-type dicing tape. The pressure-sensitive dicing tape is usually applied to a gas-glycol-based or polyolefin-based underlayer film. The dicing tape should have the components not cut as the wafer cutting step is cut. The strong bonding force of the spinning and scattering of the Dicing Saw requires a lower bonding force to be picked up so that the bonding agent is not attached to each component during the drawing, or the component is not damaged. There is a lack of pressure-sensitive cutting tapes of the two properties opposite to the above, and it is necessary to perform the work of replacing the tapes according to the size and processing conditions of each semiconductor component. In addition, it is necessary to meet the dimensions and processing conditions. A variety of cutting stickers with a variety of bonding forces (please read the notes on the back and fill out this page)

μ氏张Scale is applicable to China_Standard (CNS) A4 specification - χ tear-------tl---------^丨--------II------ -------- 2 313968 1287835 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7

3 313968

Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumption Cooperative, Printing 4 1287835

Description of the Invention (The role of the semiconductor element and the supporting connection of the reliability bonding piece as an interface, the superior semiconductor device carrying the # & external 'also seeks to have the semiconductor component of the condition B / piece' A method of manufacturing a semiconductor device capable of simplifying the manufacturing process, and a method of manufacturing a film having a large difference in thermal expansion coefficient, and having a higher heat resistance and moisture resistance, and having excellent workability. From the result of the pick-up, it was found that the right-handed cat was used to face the surface. 'Resolve the above question:: The bonding piece of the adhesive layer of the component can be solved, and the inventors have made the above-mentioned bonding piece Filial piety and reliability, and from the characteristics of u μ, a piece of film operation • g ^ or sub-surface discussion, it was found that with the characteristics of the bond piece to achieve further improvement in workability and reliability. That is, the present invention relates to an adhesive layer having a predetermined component, and the adhesive layer and the substrate layer are provided; and the bonding force between the adhesive layer and the substrate layer is Use of radiation a bonding sheet controlled by irradiation; the adhesive layer contains the following components: (a) a thermoplastic resin; (b) a thermally polymerizable component; and (c) a compound which is produced by radiation irradiation. The present invention also relates to a bonding sheet having the following parameters: < 2 > The adhesive layer has a joint strength of 200 mN at the interface between the adhesive layer and the substrate layer before radiation irradiation. /cm to 313968 (please read the notes on the back and fill out this page)

1287835 A7 B7 Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives, Printing 5, Inventions (5); or (A2) The above adhesive layer before radiation exposure, using 25 lcm p probe to measure the 25 °C adhesion strength at 〇5N or more; and a bonding sheet having at least one of the following characteristics; (B1) i6 before radiation irradiation (rc flow amount is ι〇〇 to 1〇〇〇〇//m; (B2) radiation The i6 〇 °c melt viscosity before irradiation is 5 〇 to 100 OO OA · s 〇 , , , 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 & & & & & & & & & & & & & & & The bonding force between the layer and the base material layer is a bonding sheet controlled by irradiation of radiation; the adhesive layer has (A2) the above-mentioned adhesive layer before radiation irradiation, and is probed by 5.1 mm p The needle has a 25 ° C adhesion strength of 0.5 N or more; and has a bonding sheet having at least one of the following characteristics; (B1) 16 前 before the radiation irradiation. The turbulent flow amount is 1 〇〇 to 10000 m; (B2) The i60 ° C melt viscosity before radiation exposure is 50 to 100 OOPa · s ° <4> having an adhesive layer and a base material layer; and a bonding force between the adhesive layer and the base material layer is a bonding sheet controlled by irradiation of radiation; the adhesive layer has: C1) The bonding strength at the interface between the adhesive layer and the substrate layer before and after the radiation irradiation (joining strength before radiation irradiation - bonding strength after radiation irradiation) is 1 〇〇 mN/cm or more; and has the following characteristics a bonding piece of at least one of the characteristics; _ (D1) tan at 120 °C before radiation exposure (5 is above 0.1, and the radiation standard is applicable to the Chinese National Standard (CNS) A4 specification (21〇χ 297 mm) 5 313968 (Please read the phonetic on the back? Please fill out this page again)

1 — 11111 "!^^ — 111 — — — —— — — — — — — — — — — — — I· Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 6 1287835 A7 ___ B7____________ V. Description of Invention (6 ) 180 °C tan after irradiation (5 is 0.1 or more; (D2) Storage elastic modulus at 120 ° C before radiation irradiation is 10 MPaW, and storage elastic modulus at 180 ° C after radiation irradiation is below i 〇〇 MPa. ;5> having an adhesive layer and a base material layer; and a bonding force between the adhesive layer and the base material layer is a bonding sheet controlled by irradiation of radiation, and the adhesive layer has (C2) The adhesive strength of the adhesive layer before and after the radiation irradiation is 25 ° C (the adhesion strength at 25 ° C before radiation irradiation - the 25 C adhesion strength after radiation irradiation) is above the probe; and has at least the following characteristics One of the characteristics of the bonding sheet; (D1) The tint of 120 °C before the radiation irradiation is above (M, the tan 5 of 180 °C after the radiation irradiation is 0.1 or more; (D2) The storage elastic modulus of 120 °C before the radiation irradiation At 10MPaa, storage at 180 °C after radiation exposure The storage modulus is below i00 MPa. With the above structure, the bonding sheet of the present invention has a strong adhesion force in which the semiconductor element does not scatter, and then controls the bonding force between the adhesive layer and the substrate by irradiating radiation. Therefore, the opposite requirement of not damaging the weak viscosity of each component can be met. Therefore, by using the bonding sheet of the present invention to manufacture an electronic component, the effect of each step of cutting and bonding can be obtained by using one film. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an example of a bonding sheet of the present invention. Fig. 2 is a cross-sectional view showing another example of the bonding sheet of the present invention. Fig. 3 is a view showing a semiconductor wafer attached to a bonding sheet of the present invention. State diagram.__ This paper scale applies to China National Standard (CNS) A4 specification (21〇X 297 public) 1- 313968 (please read the notes on the back and fill out this page)

(Description of the Invention (7 1287835) Fig. 4 is an explanatory view showing a case where the bonding sheet of the present invention is used in a semiconductor wafer dicing step. Fig. 5 is a step shown in Fig. 4, and radiation is irradiated from the back surface to the bonding sheet. Figure 6 is a diagram of the steps of picking up semiconductor components after the steps shown in Figure 5. Figure 7 is a diagram of the selected semiconductor components and adhesive layers. Figure 8 is a diagram of the semiconductor components. Fig. 9 is a state diagram of a support member for semiconductor element bearing. Fig. 9 is a NMR chart of a tetrabenzidine tetraacetate obtained according to Synthesis Example 4. The first chart is obtained by the synthesis example 5. 4 NMR chart of phenylborate. Fig. 11 is a schematic diagram of the automatic bonding force tester. Figure 12 is a measurement method of the bleed distance. [Part number description] 1 Substrate film 2 1st adhesive layer 3 2 Adhesive layer 4 Adsorption suction device 5 Semiconductor element bearing support member 6 Cutter 10 > 11, 20 bonding piece 21 Semiconductor wafer 22 Bonding piece 23 Wiring substrate 31 Acting portion 32 Main body 40 Broadcasting portion 41 Hot plate 50 Arrow A semiconductor wafer sheet size is applicable _ Standard (CNS) A4 size ⑵〇 χ 29f public f 7 313968 -------- ^ --------- (Please read the Notes on the back page and then fill in}

Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumers Cooperative Printed-II 1· I ϋ ϋ ϋ ϋ I ϋ 1 ϋ H ϋ IIH ^1 ^1 I ^1 . The sample of the radioactive semiconductor device only needs to pass through 1287835. V. Description of invention (A1, A2) A3 semiconductor element C automatic bonding force tester S test piece [Preferred embodiment of the invention] <Substrate layer> The component of the substrate layer used in the bonding sheet of the present invention & It is not particularly limited, and may be appropriately selected in accordance with a use step or the like (for example, whether it is extended at the time of peeling or the like). Specifically, for example, a polyester film such as a polyethylene terephthalate film; a polytetrafluoroethylene film; Polyethylene film, polypropylene film, polymethylpentene film, polyvinyl acetate film and other polyolefin film, polyvinyl chloride film, plastic film such as polyimide film, etc. Further, the above substrate In the case where the film is in contact with the adhesive layer side, the tensile modulus at 25 ° C is preferably at least 25 ° C. (8) Above the above, it is better to use 2200 MPa or more, and more preferably 24 MPa or more. ... Moreover, the other side of the substrate film which is not directly in contact with the adhesive layer has a large film extension. From the viewpoint of the workability of the expansion step, it is preferable that the tensile modulus at 25 ° C is 1000 MPa or less, preferably 800 MPa or less, and more preferably 6 MPa or less. The modulus of elasticity is measured according to JIS K7113. When using a substrate layer in which two or more kinds of base film are laminated, the accumulation of the base layer and the special limitation of the tiger can be used as follows. Thin substrate '', using Chinese National Standard (CNS) A4 specification (210x297 mm) 313968 ti 8

V. Description of the invention (Method of stacking 1287835 film by the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs; laminating a film of another substrate on a substrate film; squeezing two or more kinds of substrate films on one side a method of bonding while applying a coating material, and a method of dissolving or dispersing a polymer constituting a raw material of a base film in a solvent to form a varnish, applying the varnish to another substrate film, and removing the solvent by heating; A known method such as a method of bonding with a bonding agent. <Adhesive layer> The adhesive layer used in the bonding sheet of the present invention preferably contains a thermoplastic resin, a thermally polymerizable component, and radiation irradiation. The adhesive layer of the alkali-forming substance, which has a strong adhesive force that the semiconductor element does not scatter during cutting, and then irradiates the radiation to control the bonding force between the adhesive layer and the substrate. The opposite requirement of the lower adhesion of each component during picking can be satisfied. (Thermopolymerizable component) Further, the above thermally polymerizable component can be utilized. The polymerizer is not particularly limited, and examples thereof include a compound having a functional group such as a glycidyl group, an acryloyl group, a methacryl fluorenyl group, a hydroxyl group, an isocyanate group, an amine group, or a decylamino group. These may be used singly or in combination of two or more types, and it is preferable to use a thermosetting resin which is cured by heat and imparts a bonding action. For example, the thermosetting resin is exemplified. Epoxy resin, acrylic resin, enamel resin, phenol resin, thermosetting polyimine resin, polyurethane urethane resin, melamine resin, adenine resin, etc. In particular, a joint tree with superior heat resistance, workability and reliability is obtained. The wax system uses 313968 (please read the note on the back? Please fill out this page again)

9

In the case of an oxyresin, it is preferred to use an epoxy resin hardener in combination. V. Description of the invention (Industrial Intelligence Co., Ltd., Ministry of Economic Affairs, Employees' Consumption Co., Ltd. printed 1287835 (% ► Oxygen Resin) Epoxy resin is only required to be hardened and has a bonding effect, and is not particularly limited. A bifunctional epoxy resin such as A-type epoxy, a varnish-type resin such as a varnish-type resin or a cresol novolak-type epoxy resin, etc. In addition, such as a polyfunctional epoxy resin or a glycidylamine type An epoxy resin, a heterocyclic epoxy resin or an alicyclic epoxy resin can be suitably used. For the biphenol type A epoxy resin, for example, Ebisu Epoxy Co., Ltd. Gram series (Ebike 807, Epic 815, Epic 825, Epic 827, Epic 828, Epic 834, Epic 1001, Ebike 1004 'Ebike 1007, Aibi克1〇〇9); DER-330, DER-301, DER-361 manufactured by Dow Chemical Company; YD8125, YDF 8 170 produced by Dongdu Chemical Company, etc. Benzene phthalic acid varnish type epoxy resin Like: Ebike 152, Ebike 154 produced by Sakamoto Epoxy Co., Ltd.; EPP produced by Sakamoto Chemical Co., Ltd. N-201; Dow Chemical Co., Ltd. produces DEN-438, etc. The m-cresol novolac type epoxy resin can be, for example, EOCN-102S, EOCN-103S, EOCN-1012, EOCN- manufactured by Sakamoto Chemical Co., Ltd. 1025, EOCN-1027; Dongdu Chemical Co., Ltd. produces YDCN701, YDCN702, YDCN703, YDCN704, etc. Polyfunctional epoxy resin can be, for example, Eponl031S produced by Japan Epoxy Resin; Alardad produced by Ciba Super Chemical Company 0163 (trade name, transliteration); Naja Himdek (company name, transliteration) production of Denar Kerr EX-611, EX-614, EX-614B, EX622, EX-512, EX-52 42 Dior-4 η, EX321, etc. This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 313968 ^Jingxian read the back of the note and fill out this page)

1287835 A7

11 313968 1287835 A7 B7 12 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 5, Invention Description (Mirex RN, Mirex RS, Mirex VR, etc. (base compound produced by radiation) The compound which generates an alkali by radiation irradiation is a compound which generates an alkali upon radiation irradiation, and the generated alkali can increase the curing reaction rate of the thermosetting resin. The alkali to be produced is preferably in terms of reactivity and curing speed. It is a strongly basic compound. Generally, a logarithmic PKa value of an acid dissociation constant of a basic index is used, and a base having a PKa value of 7 or more in an aqueous solution is preferred, and a base of 9 or more is more preferable. Further, the above-mentioned radiation is generated by radiation. The compound is preferably a compound which generates a base by irradiation with light having a wavelength of 150 to 750 nm. In order to produce a base which is excellent in efficiency by using a general light source, it is preferable to belong to a compound which generates light by irradiation with light having a wavelength of 250 to 500 nm. Examples of such non-intestinal examples include imidazole derivatives such as miso, 2,4-difusone, 1-methylimidazole, etc.; piperidine, 2,5-dimethyl Piperazine derivatives such as piperidine; piperidine derivatives such as piperidine and 1,2-dimethyl piperidin; proline derivatives; trialkylamine derivatives such as trimethylamine, triethylamine and triethanolamine; - a pyridine derivative in which a fourth position such as methylamine pyridine or 4-dimethylamine pyridine is substituted with an amino group or an alkylamino group; a batch of pyridoxine derivative such as pyrrolidine or n-methylpyrrolidine, diethylenediamine, 1 , an alicyclic amine derivative such as 8-diazabicyclo(5,4,0)undecene_i(DBU); a T-amine such as mercaptomethylamine, T-dimethylamine or decyldiethylamine Derivatives, etc. For those who have been exposed to radiation by the above-mentioned radiation, for example, J0urnal of Photopolymer Science and Technology 12, 313 to 314 (1999), or Chemistry of Materials 11, i7〇 to 176 _ ( Grade IV ammonium salt derivatives as described in 1999). These are applicable to the Chinese National Standard (CNS) A4 specification (2) G x 297 public) with this paper scale. &quot; --- 313968 (Please read the back Please fill out this page again)

12 1287835 A7 __________B7___ V. INSTRUCTIONS (13) Irradiation of actinic ray produces highly basic trialkylamine, which is suitable for curing epoxy resins. Furthermore, 'the urethane derivative described in Journal of American Chemical Society 118, page 12925 (1996) or P〇lymer J0urnal 28, 795 (1996), or by actinic radiation may be used. An anthracene derivative which produces a first amino group. Further, the above-mentioned compound which generates a base by radiation irradiation is most suitable for the present invention as an α-aminoketone compound. Specifically, commercially available 2-methyl-1(4-(methylthio)phenyl)-2-morpholinepropan-1-one (Ciba Super Chemistry) can be used as a photoradical generator. Iljiaqiu 907 (trade name, transliteration) produced by the company, 2-benzyl-2-dimethylamino-1-(morpholinyl)-butan-1-one (produced by Ciba Super Chemical Co., Ltd.) Iljiaqiu 369 (trade name, transliteration), hexaarylbiimidazole derivative (may also use a substituent such as a tooth, alkoxy group, nitro group, cyano group, substituted phenyl group), benzoquinone Oxazolone derivatives and the like. The α-aminoketone compound does not have an effect of promoting hardening of the thermosetting resin due to steric hindrance before irradiation of radiation, but the radiation is delayed, because the aminoketone compound is dissociated to reduce the above steric hindrance, so the inference will be promoted. The hardening effect of the thermosetting resin. In addition to the above-mentioned actinic ray alkali generators, Fries rearrangement, Claisen rearrangement, Curtins rearrangement, or Stevens rearrangement can be utilized. Producing a basic compound and performing hardening of the epoxy resin. (Aminoimine compound) This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 313968 (please read the notes on the back and fill out this page)

Order ---------Line J Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperative Printed 13 1287835 Α7 Β7 V. Description of Invention (14) Compounds used in the present invention to generate bases by radiation irradiation, except In addition to the above compounds, an aminoquinone imine compound can also be used. The amino-branched imine compound ' can be produced by irradiating with an actinic ray to produce a compound of a base without any limitation. Specifically, 'the general formula (χχν) or (XXVI) is shown below. 0 R1

(Please read the phonetic on the back first? Please fill out this page again)

Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumers' Cooperatives (where R'R^R3 is independently hydrogen, carbon number 1 to 8 alkyl, 1 to 8 alkoxy, carbon number 1 to 8 alkylene a phenyl group or a fluorenyl group substituted with a carbon number of 4 to 8 cycloalkyl groups, a carbon number of 4 to 8 cycloalkenyl groups, a carbon number of 1 to 6 phenoxyalkyl groups, a phenyl group, an electron supply group and/or an electron attracting group. The T group or the like substituted by the electron supply group and/or the electron attracting group, and the carbon number i to 8 alkyl groups include isopropyl group, isobutyl group, tert-butyl group and the like in addition to the direct bond group. Among these substituents, from the viewpoints of the simplicity of synthesis, the solubility of the amine-bromoimine, etc., the carbon number is 1 to 8 alkyl groups, the carbon number is 6 to 8 ring alkyl groups, and the carbon number is 1 to 6 oxygen groups. Further, the 'R series is independently a carbon number of 1 to $alkyl, a hydroxyl group, a carbon number of 4 to 8 cycloalkyl groups, a carbon number of 1 to 5 alkoxy groups, a phenyl group). The Ar1 in the above general formula (Π) is a general formula represented by the formula (iv) to (χνι). The Ar2 in the above general formula (2) is preferably of the following formula (χνιι) to the paper scale applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 14 313968 ϋ ϋ 1 ϋ n ϋ one: 0, · MB · MM a··· B·· MB · , 1287835 A7 B7 V. Description of invention (15) The aromatic base of the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs (XXV). Like ΑΓ1, from the viewpoint of thermal stability and absorption wavelength, the substituent of R29 to R30 is preferably a carbon number of the electron attracting group to 6 carboxyl group, cyano group, nitro group or the like. The synthesis of the above aminoguanidine compound can be carried out by a known method. Xin, as described in Emcylopedia of Polymer Science and Engineering, john Wiley & Sons Ltd (1985), No. 1, p740, reaction of the corresponding carboxylic acid ester with dentate and sodium alkoxide, carboxylic acid The ester is obtained by the reaction of hydrazine with an epoxy compound. In view of the simplicity and safety of the synthesis, it is preferred to synthesize the corresponding carboxylic acid ester, hydrazine and epoxy compound. The relevant synthesis temperature and synthesis time are not limited unless the decomposition of the starting material used is carried out, and it is generally allowed to mix 3G minutes to 7 days at a temperature of 1 to 3 days. The target aminoguanidine compound is obtained. (Imidazole gun salt) Further, in the present invention, a compound which generates a base by irradiation with green light, in addition to the above compound, an imidazole salt can be used. The imidazolium salt can be exemplified by the salt compound of the formula (1) or (2).

Arq—3'—( 0 Ri Ten

N 'Η—R4 X 0) R4—Μ

Ri Ο N~~C- 死~Αι R2

&quot;I3L W -r4

X This paper is a kind of paper (KS) A4 test (210^^- 15 313968 (please read the notes on the back and fill in this page)

V. INSTRUCTIONS () 1287835 (wherein 'R'R'r3, !^4 are each independently hydrogen, 1 to 8 carbon atoms, 1 to 8 carbon atoms, carbon number to 8 alkylene Base, carbon number 4 to 8 cyclodecyl, carbon 4 to 8 cycloalkenyl, carbon number 1 to 6 phenoxyalkyl, carbon number 1 to decyl phenyl: group, carbon number 1 to 6 cyanoalkyl a benzyl group, an electron supply group substituted with a phenyl group, a phenyl group, an electron supply group, and/or an electron attracting group substituted with a carbon number to a 6 hydroxyalkyl group, a phenyl group, an electron supply group, and/or an electron attracting group; / or a mercapto group, a nitro group, a cyano group, a decyl group, a thiomethyl group, a fluorine group, a bromine group, a thio group, an iodine group, etc. substituted by an electron attracting group. Aq is an aromatic group represented by the following formulas (I) to (XIV). (Please read the phonetic on the back first? Please fill out this page again)

This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 16 313968 1287835 A7 B7 V. Description of invention (17) to 8 alkoxy group, carbon number 1 to 8 alkylthio group, carbon number 1 to 8 alkylene group, carbon number 4 to 8 cycloalkyl group, carbon number 4 to 8 cycloalkenyl group, amino group, carbon number 1 to 6 alkyl group, carbon number 1 to 3 dialkylamino group, morphine group, sparse a base, a nitrogenoxy group, a carbon number of 1 to 6 hydroxyalkyl group, a halogen such as fluorine, gas or bromine, a carbon number of 1 to 6 ester group, a carbon number of 1 to 6 carbonyl group, an aldehyde group, a cyano group, a trifluoromethyl group, a cyanogen group Substituents substituted with a phenyl group, an electron supply group, and/or an electron attracting group substituted with a thiol group, a phenyl group, a phenyl group, an electron supply group, and/or an electron attracting group. Wherein T, U, V, W, Y, Z are independently carbon, nitrogen, oxygen, or sulfur atoms; further, At*2 is represented by the following formulas (XV) to (XXIII) Aromatic base, (please read the notes on the back and fill out this page) Printed by the Intellectual Property Office of the Ministry of Economic Affairs

(In the formula, 'R29 to R36 are independent 氲, carbon number is 1 to 8 burning base' carbon number 1 This paper scale is applicable to China National Standard (CNS) A4 specification (21〇X 297 public) 17 313968 A7 Ministry of Economics intellectual property Bureau employee consumption cooperative printed 1287835 B7 V. Invention description (18) to 8 alkoxy, hinder 1 to 8 sulfur-burning group, carbon number 1 to 8 alkylene group, carbon number 4 to 8 cycloalkyl group, carbon number 4 to 8 cycloalkenyl group, amino group, carbon number 1 to 0 alkylamino group, carbon number 1 to 3 dialkylamino group, morpholinyl group, thiol group, hydroxyl group, carbon number 1 to 6 alkyl group, fluorine , chlorine, bromine and other dentate, carbon number 1 to 6 g base, carbon number 1 to 6 base, cyclized, cyano, trifluoromethyl, cyano, nitro, phenyl, electron supply and / Or a benzyl group substituted by a phenyl group, an electron supply group and/or an electron attracting group substituted by an electron attracting group, wherein A, B, D, and E are independent carbon, nitrogen, oxygen, and sulfur, These may also be bonded to carbon, nitrogen, carbon number 1 to 6 alkyl, oxygen, sulfur); further, X-based carbon number 1 to 6 dialkyldithiocarbamic acid, the following formula (XXIV) Boric acid shown, only 38 R37--B---R39 (XXIV) R40 (in the formula, R 37 to R4 are independent wind, fluorine, carbonaceous 1 to 6 snorkeling, phenyl group, fluorinated phenyl substituted with at least one fluorine, and mercapto). The synthesis of the above-described general formula of the base used in the present invention by light irradiation or the synthesis of the imide salt compound of the above (2) can be carried out by a known method, in consideration of the simplicity and safety of the synthesis. Preferably, the alkyl halide derivative and the bee cockroach derivative 1 are introduced into the imidazolium halide salt by the following gas (χχνιι), and then the anion exchange 5 幡 ° 乂 乂 exchange reaction to synthesize the imidazolium salt method. ^ ^ Paper scale applies to China National Standard (CNS) A4 specification (210 X 297 public 313968 (please read the phonetic on the back? Please fill out this page again)

18 19 ) 1287835 V. INSTRUCTIONS (a ϋ η η L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L Special restrictions, generally in the sputum to / dish and stirred under the 30 minutes to 7 compounds. These compounds are in the ...:: get the label of the smack of the squid, and the state of the fun - mountain life is not irradiated radiation It shows no reactivity with epoxy wax, so it has excellent storage stability at room temperature. /, The compound which has been exemplified by radiation irradiation to produce bases is 2 篁, relative to epoxy 100 parts by weight of the resin, preferably 〇〇1 to 2 〇〇 by weight: 'especially 0.02 to 150 parts by weight. If used in an amount of less than 〇〇 by weight, there is a tendency to lower the adhesion at the time of peeling. Depending on the compound to be used, the heat resistance is also lowered. On the other hand, when the amount is more than 2 (10) parts by weight, the properties, storage stability, and film physical properties of the adhesive film tend to deteriorate. Employee consumption Co-printing (single-state sensitizer, triplet sensitizer) Further, the adhesive bonding layer forming the bonding sheet of the present invention may be added for the purpose of absorbing light and high sensitivity of the irradiation light. Sensitizer: The sensitizer used may be a known single-state sensitizer or a triplet sensitizer only if it does not adversely affect the curable composition. Use of aromatic derivatives such as naphthalene, anthracene, anthracene, azole derivatives, benzophenone derivatives, benzoin derived paper scales applicable to China National Standard (CNS) A4 specifications (21〇χ 297 mm) 19 313968 20 1287835 V. Description of invention (physical, thioxanthone derivative, coumarin derivative, etc. The amount of the above sensitizer must be referred to the absorption wavelength of the sensitizer and the molar absorption coefficient, but preferably relative (4) Radiation irradiation, and 1 part by weight of the test base, which is from 0. 01 to 1 part by weight, particularly preferably from 〇 to 5 parts by weight, more preferably from 0.2 parts by weight of 0. 1 if sensitizer When the amount is less than 1 part by weight, the light absorption efficiency will decrease; otherwise, When the amount is more than 1 part by weight, the light transmittance tends to deteriorate. The sensitizing agent used in the present invention can be well-known single-state sensitization without adversely affecting the curable composition. Agent, triplet sensitizer, suitable for use, such as: aromatic derivative derivatives such as Cai, 蒽, 佑, aromatic carbonyl compounds, benzophenone derivatives, benzoin derivatives, thioxan _ a derivative, a coumarin derivative, etc., wherein the singlet sensitizer is preferably a naphthalene derivative, an anthracene derivative or an azole derivative, and the triplet derivative is preferably a thioxanthene derivative or a diphenylene derivative. , benzoin, such as: l methyl naphthalene, 2 • methyl naphthalene, r naphthalene, b naphthalene, 2-chloronaphthalene, 1 · bromonaphthalene, 2-bromonaphthalene, 1-iodonaphthalene, 2- Iodine naphthalene, naphthol, indomethacin, compounds of general formula (1) to (χχΙΠ) are shown below; This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 public Γ 20 313968 1287835 A7 B7 V. Description of the invention (2i)

Re

R13i

Only 7

CIV)

(E)

Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Cooperatives (where R5 to R28 are independently hydrogen, 1 to 8 carbon atoms, 1 to 8 alkoxy groups, 1 to 8 alkylthio groups, carbon number 1 to 8 alkylene group, 4 to 8 cycloalkyl group, 4 to 8 cycloalkenyl group, amino group, 1 to 6 alkylamino group, 1 to 3 dialkylamino group, morpholinyl group, a mercapto group, a hydroxyl group, a carbon number of 1 to 6 hydroxyalkyl group, a halogen such as fluorine, chlorine or bromine, a carbon number of 1 to 6 ester group, a carbon number of 1 to 6 carbonyl group, an aldehyde group, a cyano group, a trifluoromethyl group, a phenyl group substituted with a phenyl group, a nitro group, a benzoinyl group, a phenyl group, an electron supply group, and/or an electron attracting group substituted with a phenyl group, an electron supply group, and/or an electron attracting group. In the formula, T, U , V, W, Y, Z are independent of any of carbon, nitrogen, oxygen, and sulfur); (Please read the notes on the back and fill out this page)

This paper scale is applicable to China National Standard (CNS) A4 specification (210 X 297 mm). 21 313968 1287835 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing A7 B7 V. Invention description (22)

(wherein R29 to R30 are independently hydrogen, carbon number 1 to 8 alkyl group, carbon number 1 to 8 alkoxy group, carbon number 1 to 8 alkylthio group, carbon number 1 to 8 alkylene group, carbon number 4 To 8-cycloalkyl, C 4 to 8 cycloalkenyl, amino, C 1 to 6 alkylamino, C 1 to 3 dialkylamino, morpholinyl, decyl, hydroxy, C 1 To 6 hydroxyalkyl, fluorine, chlorine, bromine, etc., carbon number 1 to 6 ester group, carbon number 1 to 6 carbonyl group, aldehyde group, cyano group, trifluoromethyl group, cyano group, nitro group, phenyl group, a T group substituted by a phenyl group, an electron supply group, and/or an electron attracting group substituted by an electron supply group and/or an electron attracting group. In the formula, A, B, D, and E are independent carbon, nitrogen, oxygen, sulfur. Any of these may also be bonded to carbon, nitrogen, carbon number 1 to 6 alkyl, oxygen, sulfur, and the like. In addition, for example, 1-methylnonylnaphthalene, 2-methoxynaphthalene, 1,4-dicyanonaphthalene, anthracene, 1,2-benzene paper scales are applicable to China National Standard (CNS) A4. Specifications (210 X 297 mm) 7 22 313968 (Please read the notes on the back and fill out this page)

1287835 A7 B7 V. INSTRUCTIONS (23) Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative, 9, 9,10-dioxin, 9,10-dibromofluorene, 9,10-diphenylhydrazine, 9-cyanide蒽, 9,1〇-dicyanoquinone, 2,6,9,10_tetracyanoquinone, oxazole, 9-methylazole, 9-phenylfluorene, 9-propylene-2_yl-911- σ , 9_propyl-9H_wow, 9-ethylenethiazole, 9H-oxazol-9-ethanol, 9-methyl-3-nitro-9H-azole, 9·methyl-3,6-dinitro- 9H·嗤,9_辛醯基嗤,9·嗤methanol, 9-oxapropanoic acid, 9-oxazolonitrile, 9-fluorenyl-3,6-dinitro-9H-azole, 9-ethyl-3,6 - succinyl-9H-indole, 9-ethyl-3-indenyl hydrazine, 9-ethyl hydrazine, 9-isopropyl azole, 9-(ethoxycarbonylmethyl) oxazole, 9-(morpholinylmethyl) Carbazole, 9-acetamidine, 9-allylazole, 9-Tyl-9H-azole, 9·salacetic acid, 9-(2-decylphenyl)fluorene, 9-(4-methoxybenzene)嗤, 9_〇_ ethoxy-2-methyl-propyl)-9H-azole, 3-nitroazole, 4-pyridyl, 3.6--fluorenyl-9Η_嗤, 3,6 · Diphenyl-9Η_flavor, 2-based base saliva, 3.6-diethylindenyl-9-ethyloxazole, benzophenone, 4-phenylbenzophenone, 4,4'- Double Benzophenone, 4,4,_bis(dimethylamino)dibenzamine, 4,4-bis(monoethylamine)-methanone, 2-phenylphenylbenzoic acid methyl vinegar, Ketamine benzophenone, 3-methylbenzophenone, 4-methyldibenzophenone, 3,3,-dimethyl-4-methoxybenzophenone, 2,4,6_ Trimethyldibenzyl ketone '[4_(4-methylphenylthio)phenyl]-benzophenone, oxime ketone, thiophene _, 2 chlorothiophene, 4-oxothioxanthone, 1- Isopropyl thioxanthone, 4-isopropyl thioxanthene, 2,4-dimethyl ketone ketone, 2,4-diethyl thioxanthone, ^chloro-propoxy thioxanthene, benzene ^ marriage, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin n-propyl ether, benzoin n-butyl ether, benzoin isobutyl ether, 2,2-dimethoxy _ 12 a base ethyl ketone ' 2,2-diethoxy-1,2-diphenylethyl gig and the like. In addition to being used separately, these can be combined in several uses. This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 23 313968 (please read the phonetic on the back? Please fill out this page again)

— — — — — —— ^ 11111111 I . 1287835 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 24 A7 B7 V. Description of Invention (24) As described so far, (C) bases generated by light irradiation Since the compound does not exhibit reactivity with a thermally polymerizable compound such as an epoxy resin in a state where no radiation is irradiated at room temperature, it has excellent storage stability at room temperature. (Thermoplastic plastic) The adhesive sheet forming the bonding sheet of the present invention may contain a thermoplastic resin for the purpose of forming a lifted film. The above thermoplastic resin is a thermoplastic resin and has thermoplasticity at least in an uncured state, and it is only required to form a resin having a crosslinked structure after heating, and the rest is not particularly limited, and it is preferably Tg (broken). Glass transition temperature) -50 to l ° ° C and weight average molecular weight 1 〇〇 0 〇〇 to 1000000, or TglO to l 〇〇 ° C and weight average molecular weight 5 〇〇〇 to 200,000 〇 the former thermoplastic resin is best A polymer containing a functional monomer is used. The latter thermoplastic resin may, for example, be a polyimine resin, a polyamide resin, a polyether phthalimide resin, a polyamide amide resin, a polyester resin, a polyester phthalimide resin, or a phenoxy group. Resin, poly maple resin, polyether maple resin, polyphenylene sulfide resin, polyether ketone resin, and the like. Among them, the polyamidene resin is a functional group in the polymer containing the above functional monomer, and examples thereof include glycidyl group, acrylonitrile group, methacryl fluorenyl group, hydroxyl group, carboxy group, and isocyanic acid. A vinegar group, an amino group, a guanamine group or the like, wherein the glycidyl group is two. More specifically, it is preferably a glycidyl group-containing (meth)acrylic copolymer or the like containing a functional monomer such as propylene glycol methacrylate or methyl propylene glycol acrylate, and further preferably Thermosetting resin such as oxygen resin is applicable to this paper scale _冢 Standard (CNS) A4 specification (2ig 297 297 public Chu----- Μ 溶 313968 (please read the phonetic on the back? Please fill out this page again)

1287835 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 25 A7 V. Invention description (25) Status. (High molecular weight fraction containing a functional monomer having a weight average molecular weight of 10,000 or more) The high molecular weight component containing a functional monomer having a weight average molecular weight of 10,000 or more, such as glycidyl acrylate or glycidyl methacrylate An ester or the like, a glycidyl group-containing (meth)acrylic copolymer containing a functional monomer and having a weight average molecular weight of 10,000 or more, and particularly a non-compatible state with a thermosetting resin such as an epoxy resin. It is better. As the above glycidyl group-containing (meth)acrylic copolymer, for example, a (meth) acrylate copolymer, an acrylic rubber or the like can be used, and an acrylic rubber is preferable. The acrylic rubber is a rubber composed mainly of an acrylate and a copolymer of butyl acrylate and acrylonitrile, or a copolymer of ethyl acrylate and acrylonitrile. The above functional monomer may also be referred to as a monomer having a functional group, and such a compound is preferably glycidyl acrylate or glycidyl methacrylate or the like. Such a glycidyl group-containing (meth)acrylic copolymer having a weight average molecular weight of 100,000 or more may, for example, be manufactured by Naja Himdek Co., Ltd. (company name, transliteration) to produce HTR-860P-3. The above-mentioned glycidyl acrylate or glycidyl methacrylate, and the like, the amount of the epoxy resin-containing repeating unit is preferably 〇5 to 6 〇% by weight, particularly preferably 0.5 to 5.0% by weight, more preferably 〇 8 to 5 〇% by weight is preferred. If the amount of the epoxy resin-containing repeating unit is within this range, the bonding force can be ensured and gelation can be prevented. _Besides propylene glycol glycerol vinegar, y-glycidyl glyceryl acrylate, white paper size applicable to China National Standard (CNS) A4 specification (210 X 297 public)---^ 313968 (please read the notes on the back first) Fill in this page)

1287835 26 Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative, Printed A7 V. Inventive Note (The above functional monomers, for example, (meth)acrylic acid, (meth)acrylic acid T (four)' can be used alone The yarns are used in combination of two or more. In addition, the term "(meth)acrylic acid in the present invention refers to both acrylic acid and ethyl methacrylate. When combined functional monomers are used. The ratio of / heart σ can be determined by considering the Tg of the glycidyl group-containing (meth)acrylic copolymer, and it is preferable that the Tg is -1 "C or more. If Tgj_1 (rc or more, the adhesion of the layer B of the adhesive layer) The method is more appropriate and does not cause problems in handling. When the monomer is polymerized to produce a high molecular weight component having a weight average molecular weight of 100,000 or more containing a functional monomer, the polymerization method is not particularly In the present invention, the weight average molecular weight of the high molecular weight component containing a functional monomer is more than 10,000, but preferably 300,000 to 3 Torr. 〇万以 = especially in the range of 500,000 to 2 million. If the weight average molecular weight is within this range, the strength, flexibility, and adhesion when forming a sheet or a film are more appropriate, and because Since the fluidity is appropriate, the circuit filling property of the wiring can be ensured. Further, in the present invention, the weight average molecular weight is measured by gel permeation chromatography and standard benzene is used as described in the evaluation method described later. The amount of the same molecular weight component containing a functional monomer having a weight average molecular weight of 10,000 or more is preferably 10 to 400 parts by weight based on 1 part by weight of the thermally polymerizable component. If it is within this range, it can ensure the elastic modulus of the storage and the fluidity during molding, and can fully obtain the AZ specification (CNG) A4 specification (21G X) at the high temperature. ------ 313968 (Please read the note on the back and fill out this page)

26 1287835 A7

27 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 1287835

5. Description of the invention (28) Acid dianhydride, 2,2,3,3,-biphenyltetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2, 2-bis(2,3-dicarboxyphenyl)propane dianhydride, 1, bis(2,3-carboxyphenyl)ethane dianhydride, M.bis(3,4-dicarboxyphenyl) Alkane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl) dianhydride, 3,4 , 9,10-nonanedicarboxylic dianhydride, bis(3,4-di-m-yl)ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3, 4匕 Diphenylmethyltetracarboxylic dianhydride 2,3,2,3,-benzophenonetetracarboxylic dianhydride, 3,3,3,,4-dibenzoic acid tetracarboxylic dianhydride 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2, 4,5-naphthalenetetracarboxylic dianhydride, 2, bis-naphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylate Acidic anhydride, 2,3,6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,1〇-tetradecanoic acid dianhydride, pyridinium_ 2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic acid monoanhydride, 2,3,3,,4,-biphenyltetra Carboxylic dianhydride, 3,4,3',4,-biphenyltetracarboxylic acid two-needle, 2,3,2,3,-biphenyltetracarboxylic dianhydride, bis(3,4-dicarboxybenzene Dimethyl phthalic anhydride, bis(3,4-dicarboxyphenyl)methylphenyl phthalane dianhydride, bis(3,4-dicarboxyphenyl)diphenyl phthalane dianhydride, 1,4-double (3) , 4-dicarboxyphenyldimethylformyl)pentylene dianhydride, 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetramethyldicyclohexane Dihydride, p-phenylene (trimellitic anhydride), ethylene tetracarboxylic dianhydride, 1,2,3,4-butyltetracarboxylic dianhydride, decalinated naphthalene-1,4,5,8-tetracarboxylate Acid dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydro table-1,2,5,6-tetra-acid dianhydride, cyclopentane-1,2, 3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, double (exobicyclo[2] , 2,1]heptane)_2,3 dicarboxylic acid dianhydride), bicyclo-[2,2,2]-oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 2, 2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 2,2-bis[4-(3,4-dicarboxybenzophenone paper scale applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read first Note the surface to fill out this page)

28 313968 1287835 A7 V. INSTRUCTIONS (29 BASE) BASE] hexafluoropropyl succinyl, 4,4'·bis (3,4 bis stilbene oxy) diphenyl sulphide dioxin, M- Bis(2-pyridylhexafluoroisopropyl) bis(trimellitic acid), bis(2-hydroxyhexafluoroisopropyl)benzene (p-tribasic anhydride) (25 dioxotetrahydro)咲 基 ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) Further, two or more types may be used in combination. Further, there is no particular limitation on the diamine benefit used as a raw material of the polyimine. For example, o-phenylenediamine, m-phenylenediamine, and 3,4,- Amine diphenylmethane, 4, diamine diphenyltetramethane, bis(4-amine-3-3,5::f-phenyl)methane, bis(4 winter 35 diisopropylphenyl)methane, 3, 3,-Diamine diphenyldifluoromethane, 3,4, diamine diphenyldifluoromethane&lt;Please read the notes on the back and fill out this page)

Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative, Printing 4,4'-Diamine Diphenyldifluoromethane, 3,3'-Diamine Diphenyl Maple, 3,4, Diamine Diphenyl Maple, 4,4 '-Diamine diphenyl hydrazine, 3,3,-diamine diphenyl sulfide, 3,4,-diamine diphenyl sulfide, 4,4,-diamine diphenyl sulfide, 3,3, _ Amine benzophenone, 3,4,-diamine di- ketone, 4,4-amine-aldolone, 2,2-bis(3-aminophenyl)propane, 2,2,_(3,4, _ Diamine diphenyl) propane, 2,2-bis(4-aminophenyl)propane, 2,2-bis(3-aminophenyl)hexafluoropropane, 2,2-(3,4-diamine Diphenyl)hexafluoropropane, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,3-bis(3·aminophenoxy)benzene, 1,4-bis(3-aminophenoxy) Benzo, 1,4-bis(4-aminophenoxy)benzene, 3,3'-(1,4-phenylenebis(1-methylethylidene)benzidine, 3,4'_ (1,4-phenylenebis(1-methylethylidene))benzidine, 4,4'-(1,4-phenylbis(1-methylethylidene)benzidine, 2,2 - bis(4-(3-aminophenoxy)phenyl)propane, 2,2-bis(4-(4-aminophenoxy)phenyl)propane, 2,2-bis(4-(3) -aminophenoxy)benzene Hexafluoropropane, 2,2- This paper scale applies to China National Standard (CNS) A4 specification (210 X 297). A 14 29 313968 ^ IIIIII .1 ϋ II ϋ I .1 IIII i ϋ II - 1287835 A7 B7 V. INSTRUCTIONS (30) Bis(4-(4-aminophenoxy)benzene)hexafluoropropane, bis(4-(3-aminophenoxy)phenyl) sulfide, bis(4-(4- Aminophenoxy)phenyl) sulfide, bis(4-(3-aminophenoxy)phenyl) maple, bis(4-(4-aminophenoxy)benzene) maple, 3,5-diamine An aromatic diamine such as benzoic acid; 1,2-diaminoethane, i,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, l, 6-Diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 19-diaminodecane, 1,1 fluorene-diamine oxime, 1,11 -diaminoundecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, the general formula (3) ?3 \ ΐ3Η2Ν~ Sr O Si- R2~NH2 mR4 B4 (3) Printed by the Consumers' Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs (where Ri is a divalent hydrocarbon group with 1 to 3 carbon atoms, which may be the same Mutual difference; r3 and r4 are monovalent hydrocarbon groups, and these may be the same or mutually different; m is 1 or more integers) diaminopolyoxyalkylene; 13·bis(aminomethyl) ring Jaffa (trade name, transliteration) produced by the company, Sander Chemical Company (company name, transliteration) D-230, D-400, D-2000, D-4000, ED-600, ED_9〇〇, An aliphatic diamine such as a polyoxyalkylene diamine such as ED_2〇〇1 or edr148. These may be used alone or in combination of two or more. The polyimine resin preferably has a Tg of 200 ° C and a weight average molecular weight of preferably 10,000 to 200,000. (Other components) By combining the above-mentioned components, it is possible to obtain a superior characteristic of the joint - ^ In addition to optimize the characteristics, or to match the use of the semi-inductive seal dream 4 ^ grid (210 x 297 public meals, etc.) (4) Pack, ' 30 313968 (please read the notes on the back and fill out this page)

Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives, Printing 6 31 [287835

5. Description of the Invention (31. etc.) Other components as shown below may be used. (Radiation polymerizable component) The component constituting the adhesive used in the bonding sheet of the present invention is also used for the purpose of enhancing the polymerization sensitivity of radiation irradiation. The radiation polymerizable component may be contained. The radiation polymerizable component is not limited to (4), and examples thereof include acid methyl vinegar, methyl acetonate methyl vinegar, acetoacetic acid vinegar, methyl acrylate acid, and acrylic acid. Ding, butyl methacrylate, 2-ethyl (tetra) phthalate, 2-ethylhexyl acrylate, pentene acrylate 5 曰, tetrahydrofurfuryl acrylate, tetrahydrofurfuryl acrylate, diacrylic acid Di-G-alcohol ester, triethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, dimethacrylate diethylene glycol vinegar, dimethyl (tetra) acid triethylene Alcohol vinegar, dibasic; tetraethylene glycol acrylate, di-hydroxymethyl propyl diacrylate, trimethylol propyl triacrylate, trimethoprim &amp;amp; trimethyl propylene Trimethylolpropyl acrylate, 1,4-butanediol dipropylene, knee paper &amp; ^ phthalic acid ester 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate 1% hydrazine, 1,6-hexanediol dimethyl diester, pentaerythritol triacrylate, ridge 々 ^ soil word Tetrapropanol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethyl acrylate, dipentaerythritol hexaacrylate, dipentaerythritol six trial decyl acrylate, styrene, divinyl benzene, 4 -vinyltoluene, 4-ethyl, knee|^ G-alkenyl pyridine, hydrazine vinylpyrazine, acrylic acid 2-acetic acid acetate, methacrylic acid 2_ylaminoethyl propylene oxyl-2 Hydroxypropane, 1,2-methylpropenyloxy-2-, propylene, methylene bis decylamine, N,N-dimethyl propyl amide (iv) ene amide, tris (10,000-hydroxy ethane) Trimethacrylate of isocyanate, the general formula (4), k paper scale shown below applies to China National Standard (CNS) A4 specification (21G X 297 ^ 7 313968 (please read the back note first and then fill out this page)

1287835 A7 B7 V. DESCRIPTION OF THE INVENTION (32 (wherein, Ri and R2 are hydrogen or methyl; q and r are 1 or more integers) The compound shown, the diol, and the general formula (5) (/MC0)n (5) ocn~r3-nco (wherein η is 0 to 1 integer; R3 is a divalent or valence organic group having 1 to 30 carbon atoms) The isocyanate compound shown, and the general formula (6) H^ C=:C~C&quot;^0 ~R5-OH II ο (6) (wherein R4 is a hydrazine or a methyl group; R5 is an ethylene group or a propylene group) a urethane composed of the compound shown. Acrylate, urethane methacrylate, general formula (7) (please read the phonetic on the back? Please fill out this page)

-ϋ ϋ -I ϋ ϋ I ϋ 一一^ ϋ ϋ imam I Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed h2n~r6-nh2 (7) (where R0 is a two-valent organic carbon number 2 to 30 Diamine, and general formula (8)

(NC〇) η OCN—R7—NCO (8) (where η is 0 to 1 integer; R7 is a divalent 碳3 to 30 of carbon atoms 3 32 313968 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative print 33 1287835 A7

V. INSTRUCTIONS INSTRUCTION (33) valence organic group) The heterogeneous acid vinegar compound shown, and by the general formula (9) (rH3 (9)

H20c~C-{ OCHaCH^NCO ο (wherein n is a complex of 0 to 1 integer) of urea methyl acrylate vinegar; at least one ethylenically unsaturated group from the functional group-containing ethylene copolymer The addition reaction is carried out with a compound having a functional group such as an epoxy group, an isocyanate group, a hydroxyl group or a carboxyl group, and a radiation polymerizable copolymer having an ethylenically unsaturated group in a side chain is obtained. These radiation-polymerizable compounds may be used singly or in combination of two or more. In addition, a compound which generates a base which promotes the curing of the epoxy resin by radiation irradiation may be used as the radiation polymerizability. (Curing accelerator) Further, in the adhesive bonding layer for forming a bonding sheet of the present invention, a curing accelerator may be additionally added. The hardening accelerator is not particularly limited, and examples thereof include imidazoles, dicyandiamide derivatives, dicarboxylic acid diterpenes, triphenylphosphine, tetraphenylpyridinium tetraphenylborate, and 2-ethyl-4. _Methylimidazolium tetraphenylborate, hydrazine, monoazabicyclo(5,4,0)undecene-7-tetraphenylborate, and the like. These may be used alone or in combination of two or more. The amount of the hardening accelerator added is preferably from 0.1 to 5 parts by weight, particularly preferably from 0 2 to 3 parts by weight, per part by weight of the thermally polymerizable component. If the amount is within this range, the sclerosing property can be taken into account. The standard of China National Standard (CNS) A4 is applicable to the paper size of 娈宏槌〇(10)χ 297 public £3------ Umbrella 313968 rtt read first Note on the back and fill out this page)

1287835 34 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperatives Printed A7 B7 V. Invention Description (If the amount is less than 0 · 1 part by weight, there is a tendency for the hardenability to deteriorate; otherwise, if it exceeds 5 parts by weight, there is a preservation stability Further, in the adhesive layer forming the bonding sheet of the present invention, it is also possible to use irradiance, linear light, or radical generating for starting polymerization of a radiation-polymerizable compound. Photopolymerization initiator. Such a photopolymerization initiator can be used, for example, benzophenone, N,N'-tetradecyl-4,4'-diaminodibenzophenone (carbenone), N , N' face tetraethyl-4,4,-diaminobenzhydryl, methoxymethoxydimethylaminobenzophenone, 2-Tyl-2-dimethylamino-1- (4-morpholinyl)-butan-1-one, 2,2-dimethoxy-1,2-diphenylethyl-1-one, 1-hydroxy-cyclohexyl-phenyl-one, 2 -Methyl-1 - (4-(methylthio)phenyl)-2-morpholine propyl _ 1, 1,2,4-diethyl thioxanthone, 2-ethyl hydrazine, phenanthrenequinone, etc. Ketone; benzoin methyl ether, benzoin ethyl ether, benzoin phenyl ether, etc. benzoin ether; methyl stupid , ethyl benzoin, etc. benzoin; benzyl derivative such as mercapto dimethyl ketone; 2_ (o-phenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl) -4,5-di(m-methoxyphenyl)imidazole dimer, 2 gas o-fluorophenyl)-4,5-phenylimidazole dimer, 2-(o-methoxyphenyl)_4 , 5_diphenylimidazole dimer, 2_(p-methoxyphenyl)-4,5-diphenylimidazole dimer, 2, bis(p-methoxyphenyl)-5-phenyl 2,4,5-triarylimidazole dimer of imidazole dimer, 2_(2,4-dimethoxyphenyl)-4,5-diphenyl saponin; phenyl acridine , 丨, ^ acridine derivatives such as bis(9,9'-acridine) heptane and the like. These may be used alone or in combination of two or more. The amount of the photopolymerization initiator to be used is not particularly limited, but is preferably 0.01 to 30 parts by weight based on the weight of the radiation polymerizable compound i 。. The adhesive layer of the invention is suitable for improving its magnetic scale. (CNS) A4^i^^-------- 313968 (please read the notes on the back and fill out this page)

34 35 1287835 V. INSTRUCTIONS FOR THE PROCESS (for the purpose of improving the thermal conductivity of Bodhisattva, adjusting the melt viscosity, and imparting thixotropic properties, etc.), fillers may be added. There are no special restrictions on the filler.

Such as · 虱 铭 铭, stupid shame # I gasification magnesium, carbon I calcium, magnesium carbonate, calcium citrate, strontium; acid town, oxidative release, magnesium oxide, oxidation Ming, sinhuaming, boric acid Ming nitrogen, crystal oxygen Cut, amorphous oxygen cut, etc. The shape of the filler is not limited by f. These fillers may be used singly or in combination of two or more types to improve the thermal conductivity of If ', and it is preferable to use alumina, ms, nitrogen 11 ', crystalline oxidized dream, amorphous oxidized, and the like. In addition, in the purpose of viscous viscosity adjustment or thixotropy, it is preferably hydrazine, hydrogen peroxide, carbon (four), magnesium carbonate, crushed (four), magnesium citrate, oxidized about magnesium oxide, oxidized, crystalline. Oxidation dreams, non-crystalline oxidized dreams, etc. In the use of the original material, it is preferably from 1 to 20 parts by weight based on 100 parts by weight of the adhesive layer. If the amount is less than 1 part by weight, the effect of the addition effect cannot be obtained. On the other hand, if the right side exceeds 20 parts by weight, the storage elasticity of the adhesive layer rises and the bondability decreases, and the electrical property is low as the pores remain. The tendency of the property bureau employee consumption cooperative to print the next issue. Further, in the adhesive layer forming the bonding sheet of the present invention, various coupling agents may be added in order to improve the interface bonding between different materials. Coupling agent &quot; cattle such as decane, lanthanide, aluminum and the like. Among them, from the viewpoint of high effect, a decane coupling agent is preferred. The above-mentioned calcining coupling agent is not particularly limited, and examples thereof include ethylene monooxane, ethylene tris(no-decyloxyethoxy)decane, ethylene triethoxytrimethoxycarbazite, and r-methylpropene. Oxypropyl propyl trimethoxy is also used in the _ family standard (CNS) A4 specifications (21G x 297 public) 35 313968 1287835 A7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing __________ B7 _. V. Invention description ( 36) decane 'r-methacryloxypropylmethyldimethoxydecane, no _(3,cyclohexyloxycyclohexyl)ethyltrimethoxydecane, r'glycidoxypropyltrimethyl Oxyl money, glycidyl propyl propyl methyl methoxy oxalate, r-glycidoxy propyl methyl diethoxy decane, n• ( (aminoethyl) r-amine Propyltrimethoxydecane, n-dot (aminoethyl) 7-aminopropylmethyldimethoxydecane, aminopropyltriethoxydecane, phenyl-r-aminopropyl Trimethoxydecane, mercaptopropyltrimethoxydecane, r-mercaptopropyltriethoxydecane, 3-aminopropylmethyldiethoxydecane, 3-ureidopropyl Ethoxy decane, 3- ureidopropyl trimethoxy decane, 3-aminopropyl trimethoxy decane, % aminopropyl tris(2-methoxy-ethoxy-ethoxy) decane, N-methyl_3•aminopropyltrimethoxydecane, diaminopropyldimethoxyoxycrush, 3-4,5-dihydroisodec-1-yl-propyltrimethoxydecane, 3-methacryloxypropyl-trimethoxydecane, 3-benzylpropylmethyldimethoxydecane, 3-apropylpropyldimethoxydecane, helium propyldimethoxy Decane, 3-cyanopropyltriethoxydecane, hexamethyldiazepine, N,0-bis(trimethylformamidinyl)acetamide, methyltrimethoxyxetane, methyltri Ethoxy decane, ethyl trioxane, n-propyl trimethoxy decane, isobutyl trimethoxy decane, pentyl trichloro decane, octyl triethoxy decane, phenyl trimethoxy decane, phenyl Triethoxy decane, tris(methacryloxyethoxyethoxy)decane, methyltris(glycidyloxy)decane, N-stone (N-vinylbenzylaminoethyl)-r _Aminopropyltrimethoxydecane, octadecyldimethyl Dimethyl[3-(trimethoxycarbamidino)propyl]ammonium chloride, vaporized propyldichlorodecane, 7*-chloropropylmethyldimethoxydecane, r-gasified propyl Methyl diethoxy decane, trimethyl methoxide This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 36 313968 (please read the back note and fill out this page)

----I--订---II I---线— · 1287835 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 ______B7 V. Description of invention (P) isocyanate, dimethylformamidine isocyanate, Methyl methacrylate triisocyanate, ethyl carbaryl triisocyanate, phenyl decyl triisocyanate, tetraisocyanate decane, ethoxy decane isocyanate, and the like. These may be used singly or in combination of two or more. Further, the 'titanium coupling agent' may, for example, be isopropyl tricaprylium titanate, isopropyl dimethacrylate isostearyl strontium titanate or isopropyltridecylbenzenesulfonate titanate. Isopropylisostearyl bismuth diacrylate, isopropyl tris(dioctylphosphine) titanate, isopropyl tripentyl phenyl titanate, isopropyl tris(dioctyl pyrophosphate Ester) titanate, isopropyl tris(n-aminoethyl) titanate, tetraisopropyl bis(dioctyl acid S) titanate, tetraoctyl bis[di(tridecyl) Phosphate] titanate, tetrakis(2,2-diallyloxymethylbutyl)bis[bis(dodecarotyl)] squarate titanate, dicumyl phenoxyacetate Titanate, bis(dioctyl pyrophosphate)oxyacetate carbonate, tetraisopropyl titanate, tetra-n-butyl titanate, butyl titanate dimer, four (2_B Titanyl) titanate, titanium acetoacetate 'polyvinyl acetoxy vinegar, titanium octane diol acid, titanium alkanoate, titanium propionate, titanium propiolate Ethyl vinegar, titanium ethanolic acid vinegar, poly-based titanium stearate, tetramethyl titanium Vinegar, tetraethyl orthotitanate, tetrapropyl orthotitanate, tetraisobutyl orthotitanate, stearyl titanate, cresol titanate monomer, cresol titanate polymer, diiso Propyl bis(2,4-pentanedioic acid) titanium (IV), diisopropyl-bistriethanolamine titanate, octanediol titanate, tetra-n-butoxytitanium polymer, tri-n-butoxy Kechin monostearate polymer, tri-n-butoxytitanium monostearate, and the like. These may be used singly or in combination of two or more. The aluminum coupling agent can be, for example, ethyl acetoacetate diisopropyl acid. The second paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mil) &quot;--- 313968 (please read the back Please fill out this page again)

37 1287835 A7 Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperatives Printed V. Inventions (38) (Ethylacetamidine Acetate) Ming, Cheng Yizhen _ Acid 酉 二 Diisopropyl Acid Ming 'Single Acrylic Acetate Double (B) Ethylacetate acetic acid) aluminum, tris(acetylacetonate)aluminum, monoisopropoxy monooleyloxyethylacetate acetate, I di-n-butoxy monoethyl ethate 'aluminum-diiso Aluminum chelate such as propoxy-monoethylacetate acetate; aluminum isopropionate, single second butoxydiisopropylate, second aluminum butyrate, aluminum ethoxide, etc. . These may be used alone or in combination of two or more. The amount of the above-mentioned coupling agent to be used is preferably from 1 to 1 part by mass based on 100 parts by weight of the adhesive layer in terms of effect, heat resistance and cost. In the adhesive layer forming the bonding sheet of the present invention, an ion trapping agent can be further added in order to adsorb ionic impurities and to improve the insulation reliability at the time of moisture absorption. The ion scavenger is not particularly limited, and examples thereof include a triazine thiol compound and a biphenol-based reducing agent, and a known compound or a hammer system which can be used as a copper damage preventive agent for preventing ionization of copper. It is an inorganic ion adsorbent such as a magnesium aluminum compound or the like. The amount of the ion scavenger to be used is preferably from 0 to 10 parts by weight based on 100 parts by weight of the adhesive layer from the viewpoint of the effect of addition, heat resistance, cost, and the like. (Storage Elasticity) The adhesive layer forming the bonding sheet of the present invention preferably has a storage modulus of 1 〇 to 2 〇〇〇 1 ^ ^ at 25 Torr and 260 C at a stage of heat hardening. 3 to 50 MPa. The storage modulus at 25 ° C is preferably 20 S_^900 MPa, especially 50 J^gQQMPa. In addition, the _ Zhang scale under the 26 〇t _ Chinese national standard (〇 s ^ 4 specifications (210 x 297 public) --------- (please read the notes on the back of the note and fill out this page)

--------定---------Line 1 -ϋ 1« ϋ ϋ ϋ ϋ n II n ϋ ϋ ϋ ϋ ϋ I 1 -ϋ _ 38 313968 1287835 A7 ----- -B7_____ V. INSTRUCTIONS (39) The Dingzang rate is preferably 5 to 5 MPa, especially 7 to 50 MPa. When the right storage J* is within this range, the thermal stress caused by the difference in thermal expansion coefficient between the semiconductor element and the support member can be alleviated, and the occurrence of peeling or cracking can be suppressed, and the bonding agent can be prevented. It is also preferable to take the treatment to suppress the occurrence of backflow cracking. The above conditions of heat hardening vary depending on the composition of the adhesive layer, and are usually from 120 to 240. (:, in the range of 5 to 600 minutes. This storage modulus can be measured in a temperature-dependent measurement mode, for example, using a dynamic viscoelasticity measuring device (Rhe〇1〇gy (company name 'transliteration)) , DVE-V4), applying a tensile load to the hardened cement, and measuring from _5 〇 ° c to 300 ° C at a frequency of 10 Hz and a temperature increase rate of 5 to i 〇 ° c / min. DESCRIPTION OF THE INVENTION The bonding sheet of the present invention has a strong adhesive force that the semiconductor element does not scatter when wafer is diced, and then the radiation force is used to control the bonding force between the adhesive layer and the substrate layer. It can meet the opposite requirements of not lowering the lower adhesion of each component during the inspection. Therefore, it has the effect and effect of completing the steps of wafer dicing and die bonding by using one film. Moreover, the present invention The bonding sheet has a heat resistance and a moisture resistance which are required when a semiconductor element having a large difference in thermal expansion coefficient is mounted on a supporting member for a semiconductor element, and has such an effect and effect. As a result of reviewing the characteristics of the splicing sheet and the chemistry, the inventors of the present invention have conveniently identified the predetermined parameters as described below (please read the phonetic notes on the back side). Fill in this page)

Order ---------line! Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Print nf 4 4 This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 39 313968 1287835 A7 V. Invention Description (4〇) Not only used in the joint piece The raw materials, even the above effects are better. That is, the present invention relates to a bonding sheet having predetermined parameters. First, the definition of the parameters of the present invention will be described for the purpose of easily understanding the present invention. Further, the respective measurement objects of the flow amount, the melt viscosity, and the storage modulus of the present invention are the adhesive layer portions. The so-called flow amount in the present invention means an index of fluidity, for example, the joint piece is cut into a size of 10×20 mm, and placed on a carrier glass, and pressed at 16 〇〇c, 〇.8 MPa for 18 seconds, and measured by an optical microscope. The value obtained by oozing from the initial size to the length of the perimeter. The bonding strength in the present invention is 90 which is the interface between the above-mentioned adhesive layer and the above-mentioned substrate layer, unless otherwise specified. Peel strength. This bonding strength is, for example, on the back surface of the semiconductor wafer to be diced, and after the bonding sheet is pressure-bonded at room temperature or under heating and attached, only the substrate layer is measured at a stretching angle of 90. The tensile strength: 50 mm/min. Peel strength at the time of stretching, and the obtained value. The so-called melting viscosity in the present invention means an index of film fluidity, for example, measured by a parallel plate plastometer, and the obtained value is calculated. The melt viscosity is, for example, a laminate of 8 sheets, and a film having a thickness of about 400 // m is formed, which is drilled into a circle having a diameter of 11.3 mm and used as a sample, and pressurized at a load of 2.5 kgf for 5 seconds at 160 ° C. The bell is calculated from the thickness before and after the press using the first formula described later. _ The tack strength in the present invention refers to the adhesiveness of the adhesive layer. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 313968 (please read the notes on the back and fill in the form) This page)

Order ---------line! Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumer Cooperatives, Printed 1287835 A7 B7 V. Description of the Invention (Improved indicators of the Ministry of Economic Intelligence's Intellectual Property Bureau employees' consumption cooperatives, such as the adhesive testing machine manufactured by RHESCA, according to the method in JIS Z0237 1991 The conditions of the speed, the contact load of 100 gf/cm, and the contact time ls are measured at a measurement temperature of 25, and the value obtained in the present invention means the loss elastic modulus/storage elastic modulus and the energy divergence term. That is, the fluidity index at the temperature, for example, the value measured by the dynamic viscoelastic device at a temperature rise rate of 5 〇c / min, the tensile mode, and the condition of frequency 1. The so-called storage modulus, The hardness (softness) of the film is the value measured by the dynamic viscoelastic device, the temperature rise rate of 5 〇 c / min, the tensile mode, and the frequency of 10 Hz. The above is used for the present invention. The parameters are briefly explained, and the more specific measurement method is appropriately described in the paragraphs of the examples to be described later. The preferred embodiment of the invention is described with respect to the meaning of the critical value of the parameter. Further, of course, the present invention is not limited to the following aspects. (First aspect) A bonding sheet of one aspect of the present invention may be For example, a bonding sheet having an adhesive layer and a substrate layer; and irradiating with radiation to control the bonding force between the adhesive layer and the substrate layer; wherein the adhesive layer is (A1) radiation The bonding strength between the adhesive layer before the irradiation and the substrate layer is 200 mN/cm or more, and the flow amount at (1) before the irradiation of the radiation is 100 to 10000//m. Read the notes on the back and fill out this page.)

— — — — — — — 11111111 I . 'ϋ 1 n ϋ I ϋ «ϋ ϋ- IH ϋ &gt;1 ϋ I n ϋ ϋ ϋ ^1 _ This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 41 313968 Intellectual Property Office of the Ministry of Economic Affairs, employee consumption cooperative, printed 1287835

V. EMBODIMENT (42) (Second aspect) The bonding sheet according to one aspect of the present invention includes, for example, an adhesive layer and a substrate layer, and is controlled by radiation to control the above adhesive. a bonding sheet having a bonding force between the layer and the substrate layer; wherein a bonding strength between the adhesive layer before the radiation layer of the adhesive layer (A1) and the substrate layer is 200 mN/cm or more, and B2) The melt viscosity at ι 6 〇 ° C before radiation irradiation is 50 to 1 〇〇〇〇〇 Pa * s. In the bonding sheet of one aspect of the invention, the flow amount of the adhesive layer is 100 to 1 Å/m, preferably 1 to 6000 vm, before the radiation irradiation. 200 to 4000 &quot;m is better, and 5 to 4 〇〇〇β m is the best. If the flow is lower than! In the case of 〇〇 β m , the above-mentioned bonding sheet cannot be firmly adhered to the semiconductor wafer to be diced; on the other hand, if it exceeds 10000 am, the work efficiency such as processing may be lowered. Further, in the bonding sheet of one aspect of the present invention, the flow ratio before and after the radiation irradiation of the adhesive layer (the amount of flow after irradiation/the amount of flow before irradiation) is preferably 0.1 or more, and 5 or more is better, and it is better in 〇2 or more. If the value is lower than 〇·1, in the step of bonding the semiconductor element and the supporting member, there is a possibility that the semiconductor element cannot be completely joined. The maximum value of the above flow ratio is not particularly limited, and a maximum value of 1.0 is usually obtained. In the bonding sheet according to one aspect of the present invention, the bonding strength before radiation irradiation (during wafer cutting) is preferably 200 mN/cm or more, preferably 25, from the viewpoint that the semiconductor element does not scatter during wafer dicing. 〇mN/em or above, (please read the phonetic on the back? Please fill out this page again)

313968 43 1287835 V. Description of invention (Because the joint strength is higher, the semi-guided limit can be prevented, and the 徊4~ thousand conductors are scattered, so there is no upper limit, but the material obtained by Gu Yi, ^ ^ , ^ ^ ^ According to the appropriate manufacturing process, each of them is hung at 250〇〇mN/em with ##. It is easier to manufacture. Μ Μ / / Please use 'in the joint piece of one aspect of the present invention, According to the radiation, the adhesive layer/substrate layer boundary after the shot is taken. (4) The above 9G. The joint strength ratio of the peel strength (joint strength after irradiation/joint strength before irradiation) is below 0 5, preferably below 0.4. Further, it is more preferably 〇3 or less. When the value is more than 0.5, each element tends to be damaged at the time of peeling. Further, the lower limit of the joint strength ratio (joint strength after irradiation/joint strength before irradiation) is not particularly limited. In terms of workability, it is preferably 〇〇〇〇ι or more. Further, in one aspect of the present invention, the bonding sheet is based on an adhesive layer/substrate layer before and after radiation irradiation. The above 9〇 of the interface. The joint strength of the peel strength is poor ( The bonding strength before the irradiation/the bonding strength after the irradiation is 1 〇〇 mN/cm or more, preferably 150 mN/cm or more, more preferably 2 〇〇 mN/cm or more, and most preferably 250 mN/cm or more. Preferably, if the value is less than 10 μm/cm, each element will have a tendency to be damaged at the time of peeling. In the bonding sheet of one aspect of the invention, 160° before the radiation of the above adhesive layer is irradiated. The C flow amount is set to 1 〇〇 to 1000 // m, and the 90° peel strength before the radiation irradiation is set to 2 〇〇 mN/cm or more, and the adhesive layer/substrate layer interface before and after the radiation irradiation is applied. 9 上述. The difference in the strength of the peel strength (joint strength before irradiation - joint strength after irradiation) is set at 100 mN/cm or more, not only at low temperatures, but also at the time of wafer cutting. CNS)A4 Specifications_(21g x 297 public) 43 313968 1287835 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperatives Print A7 -· B7 V. Invention Description (44) The semiconductor component can be pressure-bonded to the above-mentioned bonding piece, and has Sufficient adhesion of semiconductor components during wafer dicing without scattering It has the opposite characteristic of the weak adhesion which does not cause the components to be scratched when peeling off, so it is very effective in the process cost, and the flow ratio before and after the radiation irradiation (the amount of flow after irradiation/the amount of flow before irradiation) is set at 〇 1 or more, in the bonding step of the semiconductor element and the supporting member, the bonding sheet having excellent connection reliability is produced. Further, the bonding sheet of the present invention is 160 ° C before the radiation irradiation of the above-mentioned adhesive layer. The melt viscosity is 50 to l〇〇〇〇〇pa.s, preferably 5 to 10,000 Pa*s, especially 50 to 100 OPa.s. If the melt viscosity is less than 50 Pa*s, the bonded sheet may not be sufficiently adhered to the semiconductor wafer to be cut. On the other hand, if it exceeds 10 ÅPa.s, there will be workability such as handling. The possibility of deterioration. Further, in the bonding sheet according to one aspect of the present invention, the melt viscosity ratio (melt viscosity after irradiation/smelting viscosity before irradiation) before and after the radiation irradiation of the adhesive layer is 100 or less, preferably 95 or less. Especially below 90. If the value exceeds 100, there is a possibility that the semiconductor element may not be completely joined in the bonding step of the semiconductor element and the supporting member. In the bonding sheet of one aspect of the present invention, the 16 0 C smelting viscosity of the radiation layer of the above adhesive layer is set to 50 to 1 〇〇〇〇〇Pa.s, and the radiation is irradiated as described above. 90. The peel strength is set to 200 mN/cm or more, and the joint strength difference (joint strength before irradiation - joint strength after irradiation) of the above-mentioned 9 〇 peel strength at the interface of the adhesive layer/base material layer before and after radiation irradiation is set at 100 mN/ Above cm, not only can the wafer be applied at low temperatures (please read the phonetic on the back first? Then fill out this page)

This paper scale has been used in the National Standard (CNS) A4 specification (210 X 297 mm). B 4 Η 44 313968 I287835 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 45 A7 B7 V. Description of Invention (45) Cut Semiconductor On the wafer, the bonding piece can be pressure-bonded, and has a strong adhesive force that the semiconductor element does not scatter during wafer cutting, and has the opposite characteristic of weak adhesion of each component when being taken, so that the cost of the process will be It is very advantageous to set the melt viscosity ratio (melt viscosity after irradiation/melt viscosity before irradiation) to 1 〇〇 or less before and after radiation irradiation, and in the joining step of the semiconductor element and the support member, the connection reliability is excellent. The role of the bonding piece. (Third Aspect) The bonding sheet according to one aspect of the present invention includes, for example, an adhesive layer and a substrate layer, and is irradiated with radiation to control the adhesion between the adhesive layer and the substrate layer. a bonding sheet of the bonding force; wherein the adhesive layer of the adhesive layer (A2) before the radiation irradiation has a 25° C. adhesion strength measured by a 5 mm mm φ probe of 0.5 Å or more, and (Β1) The flow rate at 160 °C before radiation exposure is 1 〇〇 to 10000 &quot; m. (Fourth Aspect) The bonding sheet according to one aspect of the present invention includes, for example, an adhesive layer and a substrate layer, and is irradiated with radiation to control the layer between the kick layer and the substrate layer. a bonding sheet of the bonding force; wherein the adhesive layer of the adhesive layer (A2) before the radiation irradiation has a bonding strength of 25 ° C measured by a 5 · 1 mm φ probe of 0.5 Ν or more, and (Β2) The 160 ° (the melt viscosity under the irradiation of radiation is 50 to 1 〇〇〇〇〇pa*s. In one aspect of the present invention, the bonding sheet is 5.1 before the radiation irradiation of the above adhesive layer. The adhesion strength of 25°C measured by the mm φ probe is above 〇·5Ν, preferably 0.6N or more, more preferably 〇·7 or more, and the Chinese National Standard (CNS) A4 is used on this paper scale. Specifications (210 X 297 DON) 313968 (Please read the phonetic on the back? Please fill out this page again)

Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives, Printing 46 1287835

V. Description of the invention (46 〇·8 or more is the best. If the value is lower than the discrimination, the semiconductor element will have a possibility of scattering during wafer dicing. In the aspect of the invention, the bonding sheet is The adhesive strength of the above adhesive layer is measured by a 5.1 mm ρ probe. The difference in adhesion strength (adhesive strength after irradiation - adhesion strength before irradiation) is above 〇1N, preferably above n15n, at 0· 2 or more is more preferable. If the value is less than 〇1N, there is a tendency to damage each element at the time of picking up. In the fourth aspect described above, in the bonding step of the semiconductor element and the supporting member, the semiconductor element may be appropriately In the bonding sheet, the flow ratio before and after the radiation (flow amount after irradiation/flow enthalpy before irradiation) is preferably 0.1 or more, and the ratio of the graft viscosity before and after the radiation (melt viscosity after irradiation/ The melt viscosity before irradiation is preferably 1 Torr or less. In the present invention, the joint sheet is set to have a flow rate of 160 ° C before the radiation irradiation of the adhesive layer is 100 to 10000 am, Adhesive layer The 5 5 °C adhesion strength measured by the 5 · 1 mm 0 probe before the irradiation was above 0.5 N, and the adhesion strength of the 25 ° C measured by the 5.1 mm p probe before the radiation exposure of the above adhesive layer ( After the irradiation, the adhesion strength - the intensity of the irradiation 刖 刖 1 1 1 1 1 1 1 1 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' Strong adhesion, and the opposite characteristics of the weak adhesion of each component when it is taken, so it will be very advantageous in terms of the cost of the process, and the flow ratio before and after the radiation irradiation (flow after irradiation / flow before irradiation) When the amount is set to 〇·1 or more, in the bonding step of the semiconductor element and the supporting member, the sheet having excellent connection reliability is generated, and the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is used. -- i 313968 (Please read the phonetic on the back? Please fill out this page again)

1287835 A7 V. INSTRUCTIONS (47 The role of the printed unit of the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs. In one aspect of the present invention, the bonding sheet is melted at 160 ° C before the radiation of the above adhesive layer. The viscosity is set to 50 to 1000 OOPa.s, and the adhesion strength of the 5 ° 1 mm φ probe before the radiation irradiation of the above adhesive layer is 0.5 ° C or more, and before and after the radiation irradiation of the above adhesive layer 5·1mm (/&gt;The difference in adhesion strength measured by the probe at 25°C (adhesive strength after irradiation·adhesive strength before irradiation) is above 0.1·Ν”, which can be used not only at low temperatures on the semiconductor wafer to be cut. The pressure-sensitive adhesive sheet can be pressure-bonded, and has a strong adhesive force that the semiconductor element does not scatter during wafer cutting, and has the opposite characteristic of weak adhesion of the components without being damaged, so that the cost of the process will be very favorable. At the same time, the melt viscosity ratio (melt viscosity after irradiation/smelting viscosity before irradiation) before and after radiation irradiation is set to 1 〇〇 or less, and is generated in the bonding step of the semiconductor 7G member and the support member. In the first to fourth aspects described above, it is preferable that the joint strength after radiation irradiation is not damaged to each of the workpieces at the time of picking, and the joint strength is preferably l〇〇mN/cm or less. In the case of bonding to a relatively thick semiconductor wafer, even if it is above this value, it is no problem. Under (10), the following is the case, regardless of the thickness of the semiconductor wafer (such as The value of the extremely thin semiconductor wafer with a thickness of 2 〇/im can also be applied. Adjust the bonding strength and adhesion strength of the adhesive layer before the above-mentioned radiation irradiation to the desired enthalpy. In the method, the squareness of the adhesive layer at room temperature can be increased, and the joint strength and the adhesive strength are all increased. On the contrary, if the flow team is used in the middle, the joint strength is used. And adhesion strength wood paper scale _ towel _ fresh 47 313968 (please read the phonetic on the back? Please fill out this page)

Order ---------Line J 1287835 A7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing --~---____ five, invention description (48) ' will also produce a tendency to decrease. For example, when the fluidity is increased, there is a method of increasing the content of the plasticizer and increasing the content of the tackifier. On the other hand, when it is desired to reduce the fluidity, it is only necessary to reduce the content of the above compound. The above plasticizer may, for example, be a monofunctional acrylic monomer, a monofunctional epoxy resin, a liquid epoxy resin, an acrylic resin, an epoxy-based all diluent, or the like. Further, the method for improving the flow amount before the radiation irradiation of the adhesive layer or the method for reducing the melt viscosity before the radiation irradiation may be, for example, adding a diluent, using a thermoplastic resin having a lower Tg, and using a lower Tg. Epoxy resin and hardener. More specifically, when a thermoplastic resin is used in the case of a polyimide, the acid monomer and the diamine monomer are selected in such a manner that the concentration of the quinone imine group of the polyimide is reduced. In the case of quinone imine, a polyethylenimine having a lower Tg can be obtained. Further, when an acrylic rubber is used, the Tg can be lowered by increasing the alkyl carbon number of the side chain of the acrylic rubber or increasing the flexibility of the main chain. (Fifth Aspect) The bonding sheet according to one aspect of the present invention includes, for example, an adhesive layer and a substrate layer, and is irradiated with radiation to control the adhesion between the adhesive layer and the substrate layer. a bonding sheet of bonding force; wherein the adhesive layer layer (C1) has poor bonding strength at the interface between the adhesive layer and the substrate layer before and after radiation irradiation (joint strength before radiation irradiation - bonding strength after radiation irradiation), 100mN/cm or more; and (D1) 120°Ctan before radiation exposure (5 is greater than or equal to 0.1, and 180°C tan 5 after radiation exposure is above 〇·1 or above. (Sixth aspect) This paper size is applicable to China. National Standard (CNS) A4 Specification (210 X 297 mm) 48 313968 (Please read the notes on the back and fill out this page)

Order ---------Line — · 1287835 A7

49 313968 Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumers Cooperatives, Printing Society 50 1287835

V. INSTRUCTIONS (5〇) At any temperature between room temperature and 150 ° C, when the interface sheet is laminated on the semiconductor wafer through the above-mentioned layer of the adhesive layer, the strong adhesive to the semiconductor wafer cannot be ensured. Stickiness. Further, in the latter case, when the semiconductor element is bonded to the supporting member through the adhesive layer, a firm bonding force cannot be ensured at a temperature of 2 〇 or less. Thus, by limiting the addition, The fluidity of the adhesive layer at a certain temperature can be accurately quantified, and the fluidity of the adhesive layer required for the lamination of the semiconductor wafer and the subsequent die bonding can be performed. In the bonding sheet, the bonding strength before the irradiation of the interface between the adhesive layer and the substrate layer is 2 〇〇 mN/cin or more, and is more than 250 mN/cm or more, and is 3 〇〇 mN/cm or more. More preferably, if the value is less than 200 mN/cm, there is a possibility that the semiconductor element will scatter during wafer dicing. Further, the bonding strength after radiation irradiation is preferably 100 mN/cm or less. In the case of 1 〇〇mN/cm, there is a tendency for damage to each element at the time of picking. Further, in the above-mentioned bonding sheet, the bonding strength at the interface between the adhesive layer and the substrate layer before the radiation irradiation is poor and bonding The intensity ratio is the same as described in the first to fourth aspects. The numerical value can be applied to the same reason. In addition, in the bonding sheet of one aspect of the present invention, the storage elastic modulus at 120 ° C before the radiation irradiation of the adhesive layer is below i 〇 MPa, and below 5 MPa. Preferably, it is preferably 2 MPa or less, and 丨 8 放射 after radiation irradiation. (The storage elastic modulus is below i 〇〇 MPa, preferably 50 MPa or less, more preferably 10 MPa or less. For the former, if the storage modulus is If it is greater than 1 OMPa, 'at any temperature between room temperature and 150 ° C, when passing through the above-mentioned adhesive paper size, the Chinese National Standard (CNS) A4 specification (2) 297 297 gong) - ------ - 313968 (Please read the notes on the back and fill out this page)

1287835 Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative A7 V. INSTRUCTIONS (51) --- The agent layer will not ensure the strong kick adhesion of the wafer when the bonding film is laminated on the semiconductor wafer. Further, in the latter case, when the storage modulus is more than 100 MPa, when the semiconductor element is bonded to the branch member through the above-mentioned adhesive layer, a strong bondability cannot be ensured at a temperature of 2 〇m. (Seventh aspect) The bonding sheet according to one aspect of the invention includes, for example, an adhesive layer and a substrate layer, and is irradiated with radiation to control the adhesive layer and the substrate layer. a bonding sheet of bonding force; wherein the adhesive layer (C2) has a 25 〇c adhesion strength before and after the radiation irradiation (25 ° C adhesion strength before radiation irradiation - 25 t adhesion strength after radiation irradiation) ) ' Above the 0·1Ν/5·1ππηφ probe; and (D1) 120 C tan before radiation exposure (5 is above 〇·ΐ, i8〇〇c tajl 6 after radiation irradiation is above 〇). In one aspect of the invention, for example, an adhesive layer and a base material layer are provided, and a bonding sheet for controlling the bonding force between the adhesive layer and the base material layer by radiation irradiation is used. The adhesive layer of the adhesive layer (C2) before and after the radiation irradiation has a poor adhesion strength at 25 ° C (25 ° C adhesion strength before radiation irradiation - 25 ° C adhesion strength after radiation irradiation), Above the needle; and (D2) storage elastic modulus at 120 ° C before radiation exposure Below OMPa, a 180 ° C storage elastic modulus of 100 MPa or less after radiation irradiation. In the above seventh and eighth aspects, the paper size for controlling the fluidity of the adhesive layer is applied to the Chinese National Standard (CNS). A4 size (210 X 297 mm) 51 313968 (please read the notes on the back and fill out this page)

1287835 Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative, Printed 52 A7 B7 V. Inventive Note (52 points, using a bonding sheet with characteristics (D1); when bonding sheets are laminated on a semiconductor wafer, it has strong adhesive force, When a semiconductor element is adhered, a bonding sheet having a characteristic (D2) is used from the viewpoint of strong bonding at a temperature of 200 C or lower. In addition, in the bonding sheet, excellent workability at the time of cutting and picking is taken into consideration. It is preferable that the bonding strength ratio (joining strength after radiation irradiation/bonding strength before radiation irradiation) at the interface between the adhesive layer and the substrate layer before and after radiation irradiation is preferably 0.5 or less. In view of obtaining a better workability, the bonding strength before the radiation irradiation of the interface between the adhesive layer and the substrate layer of the bonding sheet is 2 μm N/cm or more, and the bonding strength after the radiation irradiation is 1〇〇. In addition, in the above-mentioned bonding sheet, the adhesion strength of the adhesive layer of the adhesive layer before and after the radiation irradiation is poor (25 art adhesion strength before radiation irradiation - radiation) The viewpoint of the 25C adhesion strength after irradiation, which can be extracted without damaging each element, is set above 0.1N/5.1mmp probe, and is preferably 〇·15Ν/5·1ηπηφ probe or more. Preferably, the 〇2N/5 lmmp probe is more than the above. Further, in the bonding sheet, the adhesive layer 25 before the radiation irradiation. (10) The strength is preferably above 0. lake.lmmw needle, and after radiation irradiation The adhesive strength of the adhesive layer is preferably below the 04N/5 lm clear probe. If the adhesive strength of the adhesive layer before the radiation exposure is less than 0.5N/5.lm fresh probe, the wafer is cut. The semiconductor component will have the possibility of scattering. In addition, the adhesion strength of the adhesive layer after radiation irradiation is higher than that of the 〇.41Sr/5.1mm P probe, in the case of the &amp; _ gland 俨 俨 々 paper Kii The financial standard (cl^4 specification (21Qx^iT^ will have scratches 313968 at the time of retrieval (please read the notes on the back and fill out this page)

1287835 V. The tendency of the invention (53). Furthermore, in the above-described fifth to eighth aspects, the above-described bonding strength before radiation irradiation (during wafer cutting) is a viewpoint that the semiconductor element can be prevented from scattering when wafer cutting is performed, at 2 〇〇 mN/cm. The above is preferable, and it is preferably 25 〇 mN/cm or more. It is more preferably 3 〇〇 mN/cm or more, and is preferably 35 〇 or more. Since the bonding strength is high, the scattering of the semiconductor element can be prevented, so there is no upper limit, but it is easier to obtain the material and can be manufactured according to an appropriate manufacturing procedure, usually at 25 〇〇〇mN/cm. Especially in the case of lOOOOmN / cm or less is easier to manufacture. Further, in order to prevent damage to the respective elements at the time of picking, the bonding strength after the radiation irradiation is preferably 100 mN/cm or less. However, when it is bonded to a relatively thick semiconductor wafer, it may be any case even if it is equal to or higher than this value. The term "100 mN/cm or less" means a value which can be applied to a semiconductor wafer of any thickness (e.g., an extremely thin semiconductor wafer having a thickness of 20/zm). The method of expanding the difference in bonding strength before and after the (C1) radiation irradiation or the method of expanding the difference in adhesion strength before and after the (C2) radiation irradiation may be, for example, a thermoplastic resin, a thermosetting resin, and radiation. In the adhesive layer which is an essential component, such as a compound which produces an alkali, it can be achieved by increasing the use ratio of the thermosetting resin and the alkali generating compound. However, when the difference in bonding strength and the difference in adhesion strength are increased, the flow ratio and the melt viscosity ratio before and after the radiation irradiation tend to increase. Therefore, it is preferable to obtain the equalization. Determine the use ratio of thermosetting resin and alkali-producing compound|This paper scale applies to Chinese standard (4) Magic ^Specification '(2) "Norwegian hair" -- 53 313968

JJ 287835 A7 B7 V. INSTRUCTIONS (Μ) The Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative, prints the method of raising the 120 °C tan 5 before the above radiation exposure and the 1 80 C tan 5 after the above radiation exposure, or reducing the radiation. The storage elastic modulus of 12 ° C before irradiation and the 18 〇 t storage elastic modulus after the above radiation irradiation 'should be carried out by a well-known method such as improving the fluidity of the adhesive layer. Specifically, for example, a diluent is added, a thermoplastic resin having a lower Tg (Glass Transition Temperature), or a thermosetting resin having a lower Tg (glass transition temperature) or the like is used. The Tg of the entire adhesive layer is selected to be 12 〇 tA right before the radiation irradiation, and is about 18 ° C after the radiation irradiation, and then the optimization can be performed. (9th aspect) The bonding sheet according to one aspect of the invention includes, for example, an adhesive layer and a substrate layer, and is irradiated with radiation to control the adhesive layer and the base. a bonding sheet of bonding force between the layers; wherein the above adhesive layer is '50' in an unhardened or semi-hardened state. (: The storage modulus of elasticity is above 0.1 MMPa and below 200 MPa.) After irradiation-quantitative radiation, the storage modulus at 50 ° C will be twice or more than that before irradiation, and the flow rate at 16 ° C is 100 μ m or more and 10000 α ^ or less. (10th aspect) Further, the bonding sheet of one aspect of the present invention may include, for example, an adhesive layer and a substrate layer, and may be irradiated with radiation. And controlling the bonding layer of the above-mentioned adhesive to the n-layer bonding + force; wherein the above-mentioned kicking adhesive layer is in an unhardened or semi-hardened state, the storage elastic modulus of '50 ° C is applicable to the Chinese national standard on the private paper scale (CNS) A4 specification (21G X 297 public) &quot; , 54 313968 (please read the notes on the back and fill out this page)

--------Book -------- -- Line ^ 1287835 A7

BHH 55 313968 1287835 A7 B7 V. Description of invention (56) More than twice is better. Further, in the bonding sheet according to one aspect of the invention, the amount of flow at 160 ° C in the uncured or semi-hardened bonding sheet must be in the range of 10 〇e m or more and 10000 / / m or less. When the flow amount is less than 1 〇〇 "111", the fluidity and wettability at the time of crimping of the semiconductor element will be insufficient, and the bondability will be lowered, which is not preferable in this point. Further, if the flow amount exceeds In the case of 10000 Z/m, since the resin will excessively flow out from the end of the semiconductor element when the semiconductor element is crimped, the electrode terminal portion of the semiconductor element supporting member will be covered, and it is difficult to perform the steps such as wire bonding, and because The film thickness of the bonding sheet is also reduced, so that the bonding property is not preferable. The flow amount is preferably 100 or more from the viewpoint of less resin outflow from the end of the semiconductor element. In addition, when the supporting member of the semiconductor element is a circuit-attached tape or a circuit-attached substrate, the circuit filling property is high and the resin flowing out from the end portion is less. From the viewpoint of the flow, the flow amount is preferably in the range of from 1000 m to 4000 // m. The flow amount A of the joined piece at 160 ° C in the unhardened or semi-hardened state is irradiated with a certain amount of radiation to the bonded piece. When the flow amount b satisfies the relationship of B/A-1/10, even if there is a certain degree of error in the amount of radiation irradiation or the condition, the flow amount error after the radiation irradiation is small, which is preferable. In addition, from the viewpoint of less error in the amount of flow after radiation irradiation, B/A-1/5 is better, and B/A-1/2 is the best. Standard (CNS) A4 specification (210 X 297 mm) (Please read the phonetic on the back? Please fill out this page again)

Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumers Co., Ltd. 56 313968 This paper scale is in Chinese National Standard (CNS) A4 specification (2) G x 297, and the number of the invention is 57. The invention is based on one aspect of the invention. It is a melt viscosity of 160 ° C after irradiating a certain amount of radiation to the adhesive layer, and must be 50 to 100,000 Pa, s. When the melt viscosity is less than 50 Pa, in the case of s, the fluidity will be too large, and the resin flow from the end portion will increase, and the thickness of the joined sheet will be thinned, so that the joint property tends to be lowered. On the other hand, when it exceeds 100 OOPa", there is a tendency that the fluidity is lowered and the bondability or the circuit filling property is lowered. In addition, the storage elasticity of the unhardened or semi-hardened state of the bonding sheet after irradiation with a certain amount of radiation is 50 C. When the ratio is 15 MPa or more, it is preferable to easily peel the thin semiconductor element or the like from the base film. Further, in the case of laminating at a low temperature, bonding in an unhardened or semi-hardened state is possible. The storage elastic modulus of the film is preferably QQ 1 to 2 MPa. In terms of the cutting of the valley, the storage elastic modulus of t is preferably from 1 to 200 MPa, and it is easy to peel off. The storage modulus at 50 ° C after irradiation is preferably from 15 to 200 MPa. In terms of high fluidity, the storage modulus at 180 ° C is preferably below i00 MPa; in addition, in terms of excellent heat resistance, after hardening 5 (The storage modulus of rc is more preferably from 100 to 5,000 MPa. The above-mentioned bonded sheet in the unhardened or semi-hardened state is 50. (: storage modulus, in terms of superior cutting workability, from 5 to 100 MPa for Preferably, it is preferably from 7. 5 to 5 MPa. In one aspect of the invention, the adhesive layer is in a heat hardening stage, and the storage modulus is 10 to 2 Torr at 25 Torr. 〇MPa, and preferably 3 to 50 MPa at 260 ° C. The storage elastic modulus at 25 ° C is at 2〇313968

I I I I I order line 1287835 A7

58 313968 Please read the notes on the back and fill out this page.

1287835 A7

I I 59 313968

Order

I 1287835 V. INSTRUCTIONS OF THE INVENTION (There may be no particular limitation on the compound which can be produced upon irradiation. The test produced is preferably a strong compound in terms of reactivity and hardening speed. Basically used alkaline The logarithmic value of the acid dissociation constant of the index is preferably a base having a PKa value of 7 or more in an aqueous solution, and preferably a base of 9 or more. The example of the photobase generator used is the same as described above. The thermoplastic resin used has a Tg of -50 to 10 C and a weight average molecular weight of 1 Torr to 1 Å. If it is lower than -50 ° C, the adhesive layer is lost. Self-supporting, and will cause problems in accessibility; conversely, if the Tg exceeds 1 〇t, the temperature required for bonding will increase, neither of which is preferable. (In addition, the Tg system of the present invention The table does not use the value measured by Dsc as described in the paragraph of the evaluation method described later.) Further, if the weight average molecular weight is within this range, the strength, flexibility, and adhesion when formed into a sheet or a film form will be More appropriate, and because of the flow If it is appropriate that the weight average molecular weight is more than the above range, the above characteristics in the form of a sheet or a film are impaired, which is not preferable. In the present invention, the weight is also referred to. The average molecular weight is measured by gel permeation chromatography (also referred to as "Gr Permeation Chromatography") as described in the paragraph of the evaluation method described later, and is converted using a standard polystyrene calibration line. Further, in the above-mentioned bonding sheet, the thermoplastic resin to be used has a Tg of 10 to 100 ° C and a weight average molecular weight of 5,000 to 200,000. The above Tg is preferably from 1 Torr to 80 ° C. If the Tg is low In the case of 10 art, the adhesive layer will lose its self-supporting property and will cause problems in accessibility. The anti-paper scale applies to the Chinese National Standard (CNS) A4 specification (21〇x 297 mm) 60

Line 313968 1287835 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 61 A7 -^---- V. Invention Note (61) If the right Tg exceeds 10〇c, the temperature required for bonding will increase. Better condition. Further, the value obtained by utilizing the Tg of the present invention is more preferably related to the above weight average molecular weight of from 2 Å to 15 Å (10), more preferably from 20,000 to 80 Å. When the weight average molecular weight is within this range, the strength, flexibility, and adhesion are appropriate in the form of a sheet or a film, and the fluidity is appropriate, thereby ensuring good circuit filling properties of the wiring. When the weight average molecular weight exceeds the above range, the above characteristics in the form of a sheet or a film are impaired, which is not preferable. Further, the above-mentioned weight average molecular weight means a value measured by a gel permeation chromatography method and converted using a standard polystyrene calibration line. (Chemical structure of the adhesive layer) The bonding sheet of the present invention having the above-described effects and effects in terms of simplification of work and steps is more optimized and is discussed from the chemical structural surface of the adhesive layer. As a result, the inventors of the present invention It has been found that the above-mentioned effects can be obtained by the group of adhesive layers having the characteristics as described below. In other words, the bonding sheet of one aspect of the present invention and the resin composition constituting the same are in the sea-island phase separation resin which has no interconnecting pore structure before radiation irradiation and heating, although it is irradiated by radiation. The island phase formed by the resin forming the interconnecting pore structure and the crosslinked network pore structure are not formed in the radiation irradiation, but it is preferably a sea phase composed of a resin which forms a crosslinked structure by heating. In order to impart zygosity in the B stage, it is preferable that the radio ray hole structure is not provided before the irradiation of the radiation. In addition, the paper size of the molecular structure after radiation exposure is applicable to the Chinese National Standard (CNS) A4 specification (2) Q χ 297 public meals)~&quot; 313968 (please read the notes on the back and fill out this page)

1287835 V. INSTRUCTIONS (62) As a result, it is known that when the marine phase forms a mesh structure, there is a tendency that the fluidity is lowered and the bondability is lowered; in addition, when the island phase does not form a mesh structure, 'There will be a tendency to stick strongly and not easily peel off. In other words, when the bonding sheet is subjected to radiation irradiation, in terms of bonding, it is preferable that the island phase form a network interconnection structure, and if the marine phase is relatively easy to peel from the substrate layer from the adhesive layer, Preferably, the interconnected mesh structure is not formed. After radiation irradiation and heat hardening, both the marine phase and the island phase have a crosslinked mesh structure, which is an essential requirement for imparting heat resistance. Related island structure, || The SEM (scanning electron microscope) observation of the cross section of the sample was carried out, and the scattered portion was judged to be an island phase, and the continuous performance phase was an island phase. Adjust the relevant radiation exposure and wavelength to find the above effects. Furthermore, the formation of the parent network hole structure of each phase is judged as follows. In other words, the sample (weight Xg) was soaked in MEK 10g at 25 ° C for 1 hour, and then the insoluble matter was removed using a 200-mesh nylon cloth. The filtrate (dissolved component) was measured by drying at 17 (dry at TC for hours), and the ratio of dissolved components (%) was measured from the initial sample to the weight ratio Y/X x 100 (%). When the ratio of dissolved components was lower than In the case of 8〇%, since the mesh structure is formed and a non-dissolved portion is formed, it is judged that the marine phase forms a cross-linked pore structure. In addition, when the dissolved component ratio is 80% or more, the unit of the filter thickness of 5 mm ( In the case where the visible light transmittance in cell is above 8〇0/〇, it is judged that both the marine phase and the island phase have a cross-linked pore structure. The visible light transmittance in the 5 mm thick cell of the filter is less than 80%. However, although the marine phase does not have the cross-connected pore structure, it is judged that the island phase has a cross-linked pore structure. This paper scale applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm).

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Set III Line 62 313968 1287835 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 63 A7 B7 V. INSTRUCTIONS (63) A resin combination that forms a sea-island structure with the above characteristics by radiation irradiation can be exemplified by A combination of a low molecular weight thermosetting component in which a high molecular weight component is dissolved, or the like, wherein a glycidyl group-containing (meth)acrylic acid copolymer and a ring are preferable in terms of heat resistance and bonding property. A combination of oxygen resins. The bonding strength ratio (joining strength after irradiation/bonding strength before irradiation) of the above-described 90 peel strength at the interface between the adhesive layer and the substrate layer before and after radiation irradiation is 0.5 or less, preferably 〇4 or less, and 〇3 The following is better. If the value is greater than 〇·5, it will hurt the inclination of each component at the time of inspection. Further, the lower limit ′ of the above-described joint strength ratio (joint strength after irradiation/joint strength before irradiation) is not particularly limited, but is preferably 0.0001 or more from the viewpoint of workability. In addition, the adhesion between the adhesive layer and the substrate layer at the time of cutting (before radiation irradiation) can be performed on the semiconductor wafer to be diced by pressing the bonding sheet at room temperature or under heating. After the attachment, the measurement was performed only on the substrate layer at a stretching angle of 9 〇. Stretching speed: Peeling strength at the time of stretching at 50 mm/min. Further, in the above-mentioned bonding sheet, the above-mentioned 90 of the adhesive layer/base material layer interface before and after the radiation irradiation was used. The difference in the joint strength of the peel strength (joint strength before irradiation - joint strength after irradiation) is 100 mN/cm or more, preferably 150 mN/cm or more, more preferably 200 mN/cm or more, and most preferably 250 mN/cm or more. If the value is lower than lOQmN/cm, there will be a tendency to damage the components at the time of picking up. In the unhardened or semi-hardened state, the bonding sheet after irradiating a certain amount of radiation to the bonding sheet, the flow amount at 160 ° C is preferably 100//m or more, and the paper size is applicable to the Chinese National Standard (CNS) A4 specification. (210 X 297 mm) 313968 (Please read the notes on the back and fill out this page)

1287835 A7

3 m like 64 65 1287835 V. Description of the invention (methods such as: knife coating method, roll coating method, spray coating method, gravure (g_re) coating method, bar coating method, curtain coating method, etc. The thickness of the bonding sheet is not particularly The thickness of the adhesive layer and the substrate layer is preferably 5 to 25 G/zm. If it is thinner than 5", the stress relaxation effect will be reduced; otherwise, if it is thicker than the 25 〇 front, then = In addition to the inefficiency of the semiconductor device, it is not possible to conform to the miniaturization of the semiconductor device. In the case of obtaining the desired sheet thickness, one or more bonding layers or glues may be used. The adhesive layer is sandwiched between the semiconductor wafer and the adhesive layer. In this case, the adhesive layer provided as desired above can be prepared by using a well-known method in addition to the above method. For the preparation of the adhesive layer, the adhesive layer provided as described above can be used. Commercially available bonding sheets such as polyamidomethamine, fluorene oligomer (Silicon 〇lig0mera, rubber epoxy, Epoxy-based sigma agent, in order to make the adhesive layer The peeling phenomenon is caused by the well-known technique. <Usage method> When the radiation is irradiated to the bonding sheet having the structure as described above, the substrate layer of the adhesive layer is irradiated after the radiation irradiation. The bonding force is greatly reduced. Therefore, as described later, in the wafer dicing step in the manufacture of a semiconductor device, the adhesive layer and the substrate layer can be easily peeled off by using the bonding sheet of the present invention. As a result, the semiconductor component to which the adhesive layer is attached can be appropriately picked up. - The radiation irradiated in the month is a 150-to-one-size national standard (CNS) A4 specification. (210 X 297 public) 65

Line 313968 1287835 A7 B7 V. Description of invention (66 Ministry of Economic Affairs Intellectual Property Office employees consumption cooperatives print long-range acti ray, such as: ultraviolet light, far ultraviolet light, near ultraviolet light, visible light, electron beam, infrared light, Near infrared ray, etc. Irradiation of q 〇1 to 10000 J/cm 2 can be performed using, for example, a low pressure mercury lamp, a medium pressure mercury lamp, a high pressure mercury lamp, an ultrahigh pressure mercury lamp, a xenon lamp, or a halogen lamp. Since a part of the thermopolymerizable resin contained in the adhesive layer is hardened, it can be judged that the bonding force between the adhesive layer and the substrate sound is lowered. When only the radiation is irradiated, the complete reduction of the bonding force cannot be obtained. In the case of a combination, it is preferable to use a heating crucible to promote the hardening reaction. The temperature of the above heating varies depending on the degree of hardening reaction by radiation irradiation and the composition of the adhesive layer, but usually only the bonding sheet is exposed to 30. It can be used in an environment of 100 ° C. The above heating can be carried out by heating or an oven, and the general radiation source is In the case of radiation, most of the heat is dissipated, and if the heat is dissipated, there is no need to additionally provide a heating device. Further, the bonding force between the adhesive layer after the radiation irradiation of the present invention and the interface of the substrate layer is as follows. After the above-mentioned bonding sheet is pressure-bonded and attached at room temperature or under heating on a semiconductor wafer to be cut, only the substrate layer is stretched at a stretching angle of 90°, and a stretching speed of 50 mm/min. The peeling strength (joining strength) at the time of stretching is 100 mN/cm or less, preferably 90 mN/cm or more, and more preferably 80 mN/cm or more. If the value exceeds 100 mN/cm, damage will occur at the time of drawing. Next, the method of using the bonded sheet of the present invention will be described with reference to Figs. 1 to 8. Of course, the method of use of the present invention is not limited to the following method, and the same function is given to the figure. The same symbol, the winter standard is applicable to the Chinese National Standard (CNS) A4 specification (21〇χ 297 mm) 66 313968 (please read the notes on the back and fill out this page)

— — — — — — — 1111111 « I · 67 1287835 V. Description of invention (67) and the description thereof is omitted. Fig. 1 shows a bonding sheet 10 having a base film 1 and a first adhesive layer 2. In addition to the above-described constituent elements, the bonding sheet 20 including the second adhesive layer 3 is further disclosed in Fig. 2 . When the bonding sheets 10, 20 are used as a dicing tape, firstly, the adhesive layers 2, 3 of the bonding sheets 10, 20 are sealed on the surface of the wafer, and placed in a predetermined operation. On the stage. Further, when the peeling sheet is provided on the bonding sheet of the present invention, 'after peeling off the peeling sheet, the above-mentioned adhesive layers 2, 3 of the bonding sheet are placed upward and placed on a predetermined work table. . Next, as shown in Fig. 3, the semiconductor wafer A to be diced is attached to the second adhesive layer 3. At this time, as described above, in order to obtain a desired thickness, a bonding layer or an adhesive layer of 1 or more may be interposed between the semiconductor wafer A and the second adhesive layer 3. Next, in the attached state, the semiconductor wafer A is subjected to steps of cutting, washing, and drying. At this time, since the semiconductor wafer A is completely adhered to the bonding sheet by the second adhesive layer 3, the semiconductor wafer A does not fall off during the above steps. Further, in the fourth drawing, the wafer A is cut by a dicing cutter 0, and the cut portion is indicated by a thick line to obtain the semiconductor elements A1, A2, and A3. Next, as shown in Fig. 5, the radiation B is irradiated onto the adhesive layers 2, 3 of the bonding sheet to cause polymerization hardening of a part or a majority of the radiation-polymerizable bonding sheets. At this time, the Chinese National Standard (CNS) A4 specification (210 x 297 mm) is applied to the paper scale that promotes radiation exposure.

I I Booking Ministry of Economics, Intellectual Property Bureau, Staff and Consumers Co., Ltd. Printing 1287835

According to the invention (68), it is also possible to use heat treatment together with the purpose of hardening reaction after radiation irradiation. By combining heat treatment, the joining force can be lowered in a lower temperature and a shorter time. The heating temperature is only in the adhesive layer. The thermal decomposition temperature is not particularly limited, and is preferably in the range of 5 Torr to 170 ° C. Radiation irradiation of the bonding sheet, as indicated by an arrow B in Fig. 5, from the substrate film 1 Irradiation is not provided on one side of the adhesive layer 2. Therefore, as described above, when the radiation is UV-ultraviolet rays, the substrate film 1 must have light transmittance; when the radiation is EB (electron) In the case of the bundle of Electron Beam, the substrate film 1 does not have to be light-transmitting. After the radiation is irradiated, as shown in Fig. 6, the semiconductor elements A1, A2, and A3 to be picked up are attached by adsorption. Picking with 11 to 4). At this time, instead of the adsorption suction device .4 or the adsorption suction device 4, the semiconductor elements A1, A2, and A3 to be picked up may be protruded upward from the lower surface of the base film 1 by, for example, a needle bar. The bonding force between the semiconductor element A1 and the adhesive layer 3 is large because the adhesion between the adhesive layer 2 and the substrate film 1 is large. Therefore, if the semiconductor element A1 is taken, the adhesive layer 2 is attached. The semiconductor element is peeled off in the state of the surface of the semiconductor element (see Fig. 7). Next, the semiconductor elements A1, A2, and A3 are passed through the adhesive layer 2, placed on the semiconductor element supporting member 5, and heated. When the adhesive layer 2 is heated, the bonding force is exhibited, and the connection between the semiconductor elements ... A1, A2, A3 and the supporting member 5 for carrying the semiconductor element is completed (refer to Fig. 8). _ mouthshot This paper size applies to China National Standard (CNS) A4 specification (210x297 mm) 313968 (please read the phonetic on the back? Please fill out this page)

68 1287835 V. INSTRUCTION DESCRIPTION (69) The bonding sheet of the present invention as described above is irradiated with radiation such as ultraviolet rays (uv) or electron beams (EB) onto the bonding sheet after the wafer cutting step is completed. The radiation-polymerizable bonding sheet is subjected to polymerization hardening, whereby the bonding force between the bonding agent (layer) and the substrate film interface can be reduced, and the semiconductor element can be picked up. In the case of a conventional bonding sheet, if the surface tension of the substrate exceeds 40 mN/m, the bonding force 间 between the bonding sheet and the substrate interface cannot be completely lowered, and the pick-up property tends to be deteriorated. However, in the bonding sheet of the present invention, even if the surface tension of the substrate exceeds 4 〇 mN/m, the bonding force between the bonding sheet and the substrate interface after irradiation with radiation such as ultraviolet rays (UV) or electron beam (EB) will be It is completely lowered, and the picking of the semiconductor element is made better. Therefore, in the prior art, in order to set the surface tension of the substrate to 4 〇mN/m or less, the substrate film to be used is subjected to surface treatment, but the bonding sheet of the present invention does not require a substrate film. Surface treatment is also beneficial, which is also beneficial to the cost side. Although the present invention has been described above, for example, the following bonding sheet ' can be used as a preferred aspect of the bonding sheet of the present invention. (Twelfth aspect) A preferred embodiment of the bonding sheet of the present invention includes, for example, an adhesive layer and a substrate layer, and is irradiated with radiation to control the layer between the adhesive layer and the substrate layer. a bonding sheet of the bonding force; wherein the adhesive layer contains: 1 to 400 parts by weight of a high molecular weight component having a weight average molecular weight of 100,000 or more containing a functional monomer; (b) a thermally polymerizable component; And (c) a compound which generates a base by radiation irradiation, and the radiation is polymerized to a concentration of from 200 Å to 200 parts by weight. (13th aspect) ° Paper size 剌(CNS)A4 — (ϋ公爱)- 69 313968 1287835

The printed matter of the invention is further preferred. a bonding sheet having a bonding force between the layer and the substrate layer; wherein the adhesive layer contains: 100 parts by weight of a polyimide resin; (b) 1 to 200 parts by weight of a thermally polymerizable component; and ((radiation of radiation) In the above-described 12th and 13th aspects, the thermopolymerizable component is preferably cured by an epoxy resin and an epoxy resin in terms of workability and heat resistance. (14th aspect) The bonding sheet of one aspect of the present invention includes, for example, an adhesive layer and a substrate layer, and is irradiated with radiation to control the adhesive layer and the substrate. a bonding sheet for bonding force between layers; wherein the adhesive layer of the adhesive layer (A2) before radiation irradiation has an adhesion strength of 25 ° C measured by a probe of more than 5 ;; and (B1) radiation The flow rate of 160C before irradiation is 100 Further, the bonding sheet of one aspect of the present invention includes, for example, an adhesive layer and a substrate layer, and is controlled by radiation irradiation. a bonding sheet of bonding force between the adhesive layer and the substrate layer; wherein the adhesive layer of the knee adhesive layer (A2) before the radiation irradiation is measured by a 5 μmm φ probe at 25 ° C 〇·5Ν or more; and (Β2) 160°C melt viscosity before radiation irradiation is 50 to i〇〇〇〇〇pa.s. (16th aspect) Further, one of the preferred aspects of the present invention For example, the adhesive sheet may be provided with: an adhesive layer and a substrate layer; and a bonding sheet for controlling the bonding force between the adhesive layer and the substrate layer by radiation irradiation; wherein the adhesive is used in winter paper scale τ国国豕 示 平 (CNS) A4 specification (21〇X 297 public) 70 313968 (please read the notes on the back and fill out this page)

---------line! -^1 ϋ &gt;1 ϋ ϋ ϋ ϋ. ^1 I ·ϋ ϋ ϋ ϋ nn ϋ ϋ ϋ «ϋ I _ 1287835 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 71 A7 V. Inventions (7i) (Cl) the difference in bonding strength between the adhesive layer/substrate layer interface before and after the radiation irradiation (joining strength before radiation irradiation - bonding strength after radiation irradiation), at 100 mN/cm or more; and at least having at least the following characteristics (D1) i20°Ctan5 before radiation irradiation is 01 or more, 180°Ctan after radiation irradiation (5 is 0.1 or more; (D2) storage elastic modulus at 120°C before radiation irradiation is 10 MPa Hereinafter, the storage elastic modulus at 180 ° C after radiation irradiation is 100 MPa or less. Here, from the viewpoint of controllable fluidity of the adhesive layer, a bonding sheet having characteristics (D1) is used, when the bonding sheet is used When laminated on a semiconductor wafer, it has a strong adhesive force, and when bonding a semiconductor element, a bonding piece having a characteristic (D2) is used from the viewpoint of having a strong bonding property at a temperature of 200 C or lower. (17th aspect) Further, the present invention In a preferred embodiment, for example, an adhesive layer and a substrate layer are provided, and a bonding sheet for controlling the bonding force between the adhesive layer and the substrate layer by radiation irradiation; wherein the adhesive is provided Layer 2 (C2) Adhesive layer before and after radiation exposure 25 〇c Adhesive strength difference (25 ° C adhesion intensity before radiation exposure - 25 〇 c adhesion strength after radiation exposure), at 0.1 N/5 · 1 mm φ Above the probe; and at least the bonding sheet having at least one of the following characteristics; (D1) 12 before the radiation irradiation (rctail (5 or more, 180 °C after radiation irradiation, tan 5 at 0·) 1 or more; _(D2) 120 storage elastic modulus before radiation exposure at 1 〇 MPa on the paper scale applicable Chinese National Standard (CNS) A4 specification (210 X 297 public meals) 313968 f Please read the notes on the back and fill in This page}

72 Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperatives Printed on this paper scale Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 72 1287835 V. Description of invention (under 180°C storage elastic rate after radiation exposure) lOOMPa or less. Among them, from the viewpoint of controlling the fluidity of the adhesive layer, the bonding sheet having the characteristic (D1) is used, and when the bonding sheet is laminated on the semiconductor wafer, it has a firm bonding force. On the other hand, when the semiconductor element is bonded, a bonding sheet having the characteristic (D2) is used from the viewpoint of having a strong bonding property at a temperature of 200 ° C or lower. (Eighth aspect) Further, one of the bonding sheets of the present invention is preferably used. The bonding sheet may be, for example, an adhesive layer and a substrate layer, and a bonding sheet for controlling bonding force between the adhesive layer and the substrate layer by radiation irradiation; The adhesive layer is in the unhardened or semi-hardened state, 5 〇. The storage elastic modulus of 〇 is above O.IMPa and below 200 MPa, and the storage elastic modulus after 50 ° C. after irradiating a certain amount of radiation. The adhesive layer preferably has at least one of the following characteristics after being irradiated with a certain amount of radiation, and the flow amount at 160 ° C is 100//. m or more, loooo^m or less; (F) The melt viscosity at 160 °C is above 50 Pa*s, l〇6pa, s or less; and (G) The storage elastic modulus at 180 °C is below 100 MPa. Further, in a preferred embodiment of the bonding sheet of the present invention, for example, an adhesive layer and a substrate layer are provided, and radiation between the adhesive layer and the substrate layer is controlled by radiation irradiation. Joining force of the bonding sheet; among them, the above adhesive 313968 f, please read the back of the precautions and then fill in the page}

1287835 Ministry of Economic Affairs Intellectual Property Bureau employees consumption cooperatives printed ^ paper scale applicable China National Standard (CNS) A4 specifications (21〇X 297 public love __ 73 A7 V, invention description (73, agent layer system · (A1) in The bonding strength between the adhesive layer and the substrate layer before the radiation irradiation is 200 mN/cm or more; and at least a bonding sheet having at least one of the following characteristics; (B1) 160 ° C before the radiation irradiation The flow rate is 1 〇〇 to 10000 // m; (B2) 16 before the radiation irradiation (TC melt viscosity is 50 to 100000 Pa*s 〇 ' here) from the viewpoint of wafer cutting workability, using characteristics ( In the bonding sheet, the bonding sheet having the characteristic (B2) is used. In the bonding sheet, the ratio of the movement before and after the radiation irradiation (the amount of flow after the irradiation/the flow before the irradiation) Preferably, the amount is preferably 0.1 or more. Further, in the bonding sheet, the bonding strength ratio (bonding strength after irradiation/bonding strength before irradiation) before and after radiation irradiation at the interface between the adhesive layer and the substrate layer is preferably Below 0·5. In addition, on In the bonding sheet, the bonding strength before and after the radiation irradiation at the interface between the adhesive layer and the substrate layer (joint strength before irradiation - bonding strength after irradiation) is preferably 100 mN/cm or more. In the bonding sheet, radiation The melt viscosity ratio before and after the irradiation (melt viscosity after irradiation/melt viscosity before irradiation) is preferably 1 Torr or less. (Twentyth aspect) Further, one of the preferred embodiments of the present invention may be, for example, provided a bonding sheet for controlling an adhesive force between the adhesive layer and the substrate layer by irradiation with radiation; wherein the adhesive layer is in an unhardened or semi-hardened state The storage modulus at 50 ° C is 313968 (please read the notes on the back and fill out this page)

1287835

V. Description of invention (74 Ministry of Economic Affairs Intellectual Property Office employee consumption cooperative printed O.IMPa or above, 2〇〇MPa or less, after irradiating a certain amount of radiation, the storage elastic modulus at 50 °C will be twice that before irradiation. In the above, after the irradiation of a certain amount of radiation, the adhesive layer preferably has at least a bonding sheet having at least one of the following characteristics; (E) The flow amount at 60 C is 100//m or more, (F) The melt viscosity at 160 ° C is 50 Pa, s or more, 106 Pa.s or less; and (G) The storage elastic modulus at 180 ° C is 100 MPa or less. From the viewpoint of obtaining superior bonding properties, the flow amount A of 160 ° C of the bonded sheet in the unhardened or semi-hardened state and the flow amount B after irradiating a certain amount of radiation to the bonded sheet are preferably in accordance with B/Ag. In addition, in the unhardened or semi-hardened state, the adhesive layer after irradiating a certain amount of radiation to the adhesive sheet at 50 ° C preferably has a storage modulus of 15 MPa or more. It is best to meet the following conditions: 1) l未 in an unhardened or semi-hardened state °C storage elastic modulus is above O.OOIMPa and below 2MPa; 2) Storage flexibility at 50°C is above 7.5MPa and below 50MPa; 3) After radiation exposure, storage elasticity at 50°C is above 15MPa and below 100MPa ; 4) After hardening, the storage modulus at 50 ° C is above 100 MPa and below 5000 MPa. Further, the 5 mm square semiconductor element and the build-up hardened material of the support member using the bonding sheet adhesive layer after radiation irradiation preferably have a bonding strength at 250 ° C of 3.0 N / wafer or more. Heat-hardened joint sheet with dynamic viscoelasticity measurement This paper scale is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 74 313968 (please read the phonetic note on the back side and then fill out this page)

一-p^ · n ϋ 1 —i —i I 1 ϋ 1 1 11 ϋ 1 ϋ' ϋ 1·1 ·ϋ ϋ n ϋ ϋ n ϋ I n I Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Print r ϊ&gt; Ri 1287835

V. INSTRUCTIONS (75) When the device is being tested, the storage elastic modulus of the adhesive layer is preferably 10 MPa or more and 2 _MPa below 25 ° C, and preferably 3 MPa or more and 5 MPa under 2 thieves. According to still another aspect of the present invention, there is provided a semiconductor device manufacturing method and a semiconductor device according to the present invention. The bonding device of the present invention, the semiconductor element and the semiconductor element supporting member, or the semiconductor device The method of manufacturing a semiconductor device according to the present invention includes the bonding sheet of the present invention having the adhesive layer and the substrate layer interposed between the adhesive layers and attached thereto. a step of performing a dicing process on the semiconductor wafer to form a semiconductor element with an adhesive layer; after the dicing process, irradiating the bonding piece with radiation to make the adhesive layer a step of hardening and then peeling off the above-mentioned base film layer; and supporting the semiconductor element and the semiconductor element supporting member with the above-mentioned adhesive layer, or The semiconductor device of the present invention has a structure in which the bonding device is bonded through the bonding sheet. The semiconductor device of the present invention has a structure in which a semiconductor element is bonded to a semiconductor element supporting member or a semiconductor element by using the bonding sheet of the present invention. EXAMPLES Hereinafter, the present invention will be described in detail with reference to the embodiments of the present invention. The present invention is not limited to the embodiments. Further, in the examples, the evaluation of the bonding sheets is carried out in the following embodiments without any special statement. Explain the assessment party 313968 (please read the phonetic 3 on the back and fill out this page)

I Paper Scale Standard for Customs and Money (CNS) A4 Specification (210 X 297 issued) 75 76 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 297 mm) 76 1287835 A7 B7 V. Description of Invention (in the paragraph of the law) (Synthesis Example 1) [Synthesis of photobase generator] 30 g of 2-nitrobenzyl alcohol was dissolved in 300 g of tetrahydrofuran at room temperature using a magnetic stirrer. A premixed solution of 24.5 g of 4,4'-dibenzoic acid diisocyanate and tetrahydrofuran i〇〇g was added dropwise to the solution for 30 minutes, and then spoiled at room temperature. Then, the Lie's condenser was installed, and the reaction was carried out for 2 hours while heating in an oil bath at 60 ° C. After the reaction, after cooling to room temperature, 'revaporator' was used again. The reaction liquid was concentrated to half. The obtained concentrate was added to 1000 parts by weight of n-hexane to obtain a white precipitate. The precipitate was suction-filtered and dried under vacuum for 6 nights to obtain the target 2 under vacuum. -nitro-cyclic carbamic acid derivative (PB-1) The yield was 49.5 g (yield 91%). (Synthesis Example 2) [Synthesis of photobase generator] Methyl p-nitrobenzoate (2. g, ll mmol), hydrazine, hydrazine-dimethyl hydrazine ( 0.66g, 1 lmmol), phenyl glycidyl ether (i 66g, 1 lmmol), added to third butanol (15.0g), stirred at 50 ° C for 10 hours, then at room temperature (25 ° C The mixture was stirred for 48 hours to give a white precipitate. After filtration, the mixture was washed twice with ethyl acetate and then dried using a vacuum dryer to obtain an amino quinone compound (PB-2). The yield was 3.67 g, the yield was 85%, and the melting point was 146-147. (: (Synthesis Example 3) [Synthesis of photobase generator] Methyl p-nitrobenzoate (2.00 g, 12 mol), N, N-di The standard for the production of methyl hydrazine is applicable to the Chinese National Standard (CNS) A4 specification (21〇: 313968 广婧先开|&gt;

77 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed f paper scale applicable _ home standard ^^4 specifications (21 () &gt; &lt; 297 public love 77 1287835 five, invention description ((0.75g, 12πιιπο1), this The glycidyl scale (i 86g, 12πιπιο1) was added to the third butanol (10.Og), stirred at 50 ° C for 72 hours, and then stirred at room temperature for 48 hours. The obtained reaction solution was rotated. After the third butanol was removed by the evaporator, 1 〇g of ethyl acetate was added and recrystallized to obtain a white amino quinone imine compound (PB-3). The yield was 2.74 g, the yield was 65%, and the melting point was 148·149° ( (Synthesis Example 4) [Synthesis of photobase generator] Phenolphthale bromide (2.00 g, 1 〇. 5 mmol) was dissolved in acetone (2 〇g), and dissolved in acetone (5) in this solution. a solution of b-mercapto-2-methylimidazole (1.73 g, l. 5 mmol) in g), then stirred at room temperature (25 cc) for 2 hours to give a white precipitate. After filtration, using acetone The washing was carried out twice, and then dried under vacuum for 6 hours in 6 (TC) to obtain an imidazole gun • bromine salt 1 (yield 3.54 g). • Bromine salt 1 (2.00g, 5.4mm〇l), dissolved in methanol/water (15g/15g) solution, and slowly added sodium tetraphenylborate dissolved in water (5 〇g) in this solution (1.8 Discharge, 5 4111111 〇 1) solution. As the addition progressed, a white slurry precipitated, which was added and stirred at room temperature for 5 hours. The precipitate was filtered and dissolved in acetone (2 〇g). And recrystallization is carried out to obtain the target imidazolium tetraphenylborate (PB_4) (yield 2 86 phantom. The W-NMR of this compound is shown in Fig. 9. The melting point and thermal decomposition starting temperature in the oxygen atmosphere are utilized. The result is a melting point of 187t: and a decomposition starting temperature of 224 ° C. ° (Synthesis Example 5) [Synthesis of photobase generator] ^ Dissolved in a nitrate-based I»胂 bromide (2.00 g, 8.2 mmol) in C-(2〇 g) Beans use Chinese threshold 垣漼, λ, __________, 313968 (please read the notes on the back? Please fill out this page again)

1287835

In the printing of the Intellectual Property Office of the Ministry of Economic Affairs, the employee consumption cooperative, a solution of 1 2 monomethylimidazole (0.79 g '8.2 mmol) dissolved in acetone (5 g) was slowly added to the solution. Then, it was stirred at room temperature for 2 hours to give a white precipitate. After filtering, it was washed twice with C-, and then dried under vacuum at 6 (rc for 5 hours) to obtain a microphone: gun·bromo salt 2 (yield 2.62 g). Bromine salt 1 (2.00g, 5 8mm〇1) was dissolved in a solution of methylcellulose/water (15g/15g), and sodium tetraphenylborate dissolved in water illusion (2.01g, 5.8mm) was slowly added to the solution. 〇1) In the solution, as the addition progresses, a white slurry can be found, and after stirring, it is stirred at room temperature for several hours. The precipitate is filtered and dissolved in acetone (2 〇g) and re-extracted. Crystallization, and the obtained imidazole gun • Tetraphenylborate (ΡΒ_5χ yield 2 83g).

The iH-NMR of this compound is shown in Fig. 10. The TG-DTA was used to measure the dissolution point and the thermal decomposition starting temperature of the nitrous acid. The melting point was 165 ° C and the decomposition starting temperature was 195 ° C. (Synthesis Example 6) [Synthesis of Polyimine Resin] In a 500 ml four-necked flask equipped with a thermometer, a mixer, and a gasification tube, '2,2-bis[4-(4-aminophenoxy) was charged. Benzene] propane 41 05 g (0 1 mol), and N-methyl-2-pyrrolidone i 5 g, and stirred. After the diamine was dissolved, the flask was cooled while being cooled in an ice bath, and 1,2-(cyclodecylalkyl)bis(trimellitic anhydride) 52 2 g (〇) mol was added in small portions. After the reaction was carried out for 3 hours at room temperature, 3 g of xylene was further added, and while heating with nitrogen gas, the mixture was heated at 150 ° C to azeotropically remove water and xylene. The reaction solution is mainly introduced into the water and the polymer of the already-sinked chamber is filtered, and after drying, the polyimine resin (PI-1) is obtained. -Line-j (Please read the notes on the back and fill out this page)

78 313968 1287835 A7 B7 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 5, Inventions (79) (Synthesis Example 7) [Synthesis of Polyimine Resin] With thermometer, scrambler, and calcium chloride tube A 500 ml four-necked flask was charged with 5.41 g (0.045 mol) of 1,12-diamine decane and 11.54 g (0.01 mol) of diamine ether (manufactured by BASF, diamine ether 2000 (molecular weight: i923)). Polyoxyalkylene diamine (manufactured by Shin-Etsu Chemical Co., Ltd., KF-8010 (molecular weight: 900)), 24.3 g (0.045 mol), and N-methyl-2-D pyrrolidone 169 g, and stirred. After the diamine was dissolved in the glutamine, the flask was cooled in an ice bath while a small amount of 4,4,-(4,4-isopropylidenephenoxy)bis(titanate dianhydride) 31.23 g was added in small portions. (0.1 m). After the reaction was carried out for 8 hours at room temperature, 112.7 g of xylene was further added, and while heating with nitrogen gas, the mixture was heated at i8 ° C to azeotropically remove water and xylene. This reaction liquid was poured into water, and the precipitated polymer was filtered, and after drying, a polyimide resin (PI-2) was obtained. (Synthesis Example 8) [Synthesis of Polyimine] A 1 liter four-necked flask equipped with a thermometer, a stirrer, and a calcium chloride tube was charged with 2,2-bis(4-(4.aminophenoxy). Benzene)propane 41.0 g (0.10 mol) 'A solution of 250 g of N-methyl-2-D-pyrrolidone was added under a nitrogen stream to form a solution. The flask was transferred to a water bath, and 1,2-(ethylene)bis(trimellitic phthalate dianhydride) 41.〇g (〇.l〇mol) was added in small portions while vigorously stirring. After the acid dianhydride was substantially dissolved, the reaction was carried out for 6 hours while slowly stirring to obtain a polyaminic acid solution. Next, it was attached to a distillation apparatus in a four-necked flask equipped with the above polyamic acid solution, and 220 g of xylene was added. The polycondensed water produced by the imidization of hydrazine in a 180 ° C oil bath under a nitrogen stream, and xylene (please read the back of the back sheet and fill out this page)

--------Set---------Line 1^ Age" This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 79 313968 1287835 A7 ---- ----------- V. Description of the invention (8〇) 'Two people carry out eight boiling distillation. This reaction solution was poured into water, and the precipitated material was filtered, and dried to obtain a polyimine resin (PI-3). The composition and physical properties of the obtained brewed imine resin (ΡΙ-1 to ΡΙ·3) are as follows: In addition, each physical property was measured under the following conditions. (12), Tg VIII uses a differential sweeping calorimeter (hereinafter referred to as "Dsc") (Pakin Ellman △ Division (A Division name, transliteration) production 'DSC-7 type), according to the heating rate 1 (TC (min) The weight average molecular weight is measured by gel permeation chromatography (hereinafter referred to as "GPC") and converted according to "quasi-polystyrene." Table 1 -------- Item. ^ρΤΤΓ&quot; Pl-2 Pl-3 Composition (Mohr) One ftfc -/JSC BAPP 0.1 0.1 DDO - 0.045 EDA - 0.01 - KF- 8010 - 0.045 IDBTA ΙοΤϊΓ&quot; _ Anhydride BPADA - 0.1 EBTA 嶋 0.1 Physical Tg (°C) 120 24 180 Weight average molecular weight 120000 50000 150000 Further, the symbols in Table 1 are as follows. BAPP: 2,2_bis[4-(4-aminophenoxy)benzene]propane DDO : 1 , 12-diamine oxime ^ paper size suitable & national standard (CNS) A4 specifications (210 X 297----- 313968 (please read the back of the note before you fill out this page)

--------Book --------- Line 1 ^ Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing .! 0 80 1287835

DESCRIPTION OF THE INVENTION (81 EDA · Diamine scale 2000 (molecular weight: 1923) KF-8010: polyoxyalkylene diamine (molecular weight: DBTA: 1,1 〇-(cyclodecyl) bis(trimellitic acid field) BPADA: 4,4,(4,4,isopropylidenephenoxy)bis(titanate dianhydride) EBTA: 1,2-(ethylene) bis(trimellitic phthalate dianhydride) Next 'in manufacturing In the examples 1 to 25, 'production: the bonding sheets 1 to 25 having the compositions shown in Table 2 and Table 3. The composition of the bonding sheet i $ 1 2 and the foot 25 in the table is shown in Table 3. Table 2 ___________f Order (please read the note on the back and then fill out this page) Line Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed This paper scale applies China National Standard (CNS) A4 specification (210 297 297 mm) 81 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1287835 A7 _ B7 V. Invention description (82) Table 2

t 逡i|I Π* ^ I 1 i! iiii mrr m δ s Ϊ U) g E $ a Ψ a § 1 § is 1 1 s ! l H-* 1 u&gt; 1 1 1 1 1 1 δ sg — ΰ 1 1 1 δ ►—» 1 I minus 1 1 1 1 1 1 δ 3 δ H— ΰ 1 1 1 bJ ΙΟ 1 1 1 1 J—^ 3 s U) g 1 1 g 1 U&gt; Ray t3 1 1 1 1 gs δ § LA &lt;=&gt;a; 1 1 払1 1 δ 3 g 1 6 濉P 1 sso 1 6 〇\ 濉ON 1 δ 1 sg H-^ 1 6 Ϊ 1 δ 1 s δ g 1 δ oo 濉00 u 1 1 3 § 1 6 v〇1 ± VO 1 1 1 1 so K 1 6 s 濉S 1 1 1 so § »—A 1 6 濉I 1 1 1 1 1 1 1 o § g 1 6 to 濉ίο δ I 1 1 1 1 1 o ε g 1 1 1 δ I in OJ (please read the notes on the back and fill out this page)

: This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 82 313968 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1287835 A7 _ B7 V. Invention Description (83) Table 3 0$. Ob- a P ^ &amp;毖(T : m. S 莫 mo · 谨 >&amp; no 1 g ϊ a ε Ί3 s ES as ψ 1ψ» i •-d § gg S u&gt; a I 5 δ s Lh to a difficult δέ υΐ gs cyt Lo s ON 1 ON 1 gs Lr» U) al S s Lfi Lj 00 1 i Q〇ssa Co 1 Co δ s Ch U) three g s έ § δ δ Cj 1 KJ Is Ut U) a 濉ss Ln Lo a I ss Ul U) g 1 § δ Co 8 1 (Please read the notes on the back and fill out this page)

_This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 83 313968 1287835 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 84 A7 B7 V. Invention description (84) (Manufacturing example 1) YDCN-703 (produced by Dongdu Chemical Co., Ltd., brand name: aldehyde varnish type epoxy resin, epoxy equivalent 210) 42.3 parts by weight, fly 梓, LF2882 (trade name, transliteration) (Otsuka Ink Chemical Industry Co., Ltd. Product name, biphenol A novolak type resin) 23·9 parts by weight, Rtr 860P-3 (product name, product name, transliteration), epoxy resin containing epoxy group , molecular weight 100mN/cm, Tg-7°C) 44 1 part by weight, Qiuer 2PZ-CN ((trade name, transliteration)) (Shikoku Chemical Industry Co., Ltd. product name, 1-cyanoethyl-2 -Phenylmeridene) 4 parts by weight, nuc α-187 (Japanese company name (company name, transliteration) product name, r-methacryloxypropyl trimethoxy dream burning) 0· a composition comprising 7 parts by weight and 2 parts by weight of ruthenium carboxylic acid derivative (ΡΒ-1): 0.5 parts by weight , Methyl ethyl ketone was added and the mixture was stirred. Implementation of vacuum degassing and bonding. This adhesive varnish was applied to polyethylene terephthalate having a thickness of 50/m (manufactured by Teijin DuPont Film Co., Ltd. (company name, transliteration), Dexin Tedlon film (trade name, transliteration): G2- 50, surface tension: 50dyne / cm), at 14 〇. The underarm was heated and dried for 5 minutes to obtain a 50/m joint sheet having a substrate (ethylene terephthalate film) (the thickness of the joint sheet other than the substrate was 5 〇 vm) (joining) Slice 1). The bonded sheet 1 was measured at 17 采用 using a dynamic viscoelasticity measuring device (manufactured by Leoji Co., Ltd., DVE-V4). Storage elastic modulus at the time of hardening for 1 hour at 0 (sample size: length 20 mm, width 4 mm, thickness 80 // m, temperature increase rate 5 ° C / min, tensile mode, 1 〇 Hz, automatic! load) 25. (: 360MPa below: 260°C is 30MPa. Paper scale is applicable to China National Standard (CNS) A4 specification (2) Q χ 297 public) 313968 (Please read the phonetic on the back? Please fill out this page)

1287835 85 Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumers Co., Ltd. A7 V. Inventive Note (Production Example 2) In the production example 1, the 2-nitrobenzylaminocarboxylic acid derivative (PB_ 1) was changed to 2 Mercapto-2·dimethylamine-1-(4·morpholinylphenyl)-butyl-1-ketone (produced by Ciba Super Chemical Co., Ltd., trade name: Iljiaqiu 369 (trade name, transliteration)) In the same manner as in Production Example 1, the same operation was carried out to obtain a thickness 50 bonding sheet having a substrate (ethylene terephthalate film) (the bonding sheet thickness other than the substrate was 50/zm). (Joining sheet 2). The storage modulus of the bonded sheet 2 at 170 ° C for 1 hour was measured using an elastic viscoelasticity measuring device (manufactured by Leoji Co., Ltd., DVE_V4) ( Sample size: length 20 mm, width 4 mm, thickness 80//m, temperature increase rate 5 ° C / min, tensile mode, 10 Hz, automatic static load), resulting in 350 MPa at 25 ° C and 25 MPa at 260 ° C. Example 3) Produced by Deanker EX-411 (trade name, transliteration) (Nagahimdek (company name, transliteration)) Name, aliphatic epoxy resin, tetrafunctional, epoxy equivalent 231) 76.0 parts by weight, flylar LF2882 (trade name, transliteration) (trade name of Otsuka Ink Chemical Industry Co., Ltd., biphenol Aphenol varnish) Type resin) 39.0 parts by weight, HTR-860P-3 (product name, product name, transesterified acrylic rubber, molecular weight 100 mN/cm, Tg-7 °C) manufactured by Naja Himdek Co., Ltd. 76.7 parts by weight, Qiuer 2PZ-CN ((trade name, transliteration)) (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., cyanoethyl-2-phenylimidazole) 5. 5 parts by weight, NUC A- 187 (Japan's Younijia Company (company name, transliteration) product name, methacryloxypropyl trimethoxy decane) 0.7 parts by weight, and 2-benzyl-2-dimethylamine-1-(4 -Morline Phenyl)_丁· &gt; Paper scale applies to China National Standard (CNS) A4 specification (210 X 297 public)&quot;&quot;---- 313968 (Please read the back note and fill out this page )

85 1287835 A7 ---------B7___ V. Description of invention (86 ) ' ι__ (Production of Ciba Super Chemical Co., Ltd., trade name: Iljiaqiu 369 (trade name, transliteration)) 1.0 parts by weight Add the methyl ethyl ketone to the composition. (Please read the precautions on the back and fill out this page.) Mix and mix and perform vacuum degassing. This adhesive varnish was applied to polyethylene terephthalate (Côte d'Ivoire, Inc. (company name, transliteration) produced by Teijin DuPont Co., Ltd., Dexin Tedlon film (trade name, transliteration p G2_5〇, Surface tension: 50 dyne/cm), dried at 140 ° C for 5 minutes, and dried to obtain a substrate having a thickness of 5 Å of ethylene terephthalate (except for the substrate) The thickness of the bonding piece is 5 〇vm) (bonding piece 3) 〇The dynamic viscoelasticity measuring device (Deo-Gyman Co., Ltd., DVE-V4) is used, and the bonding piece 3 is measured at 170°. Storage modulus at room temperature C for 1 hour (sample size · length 20 mm, width 4 mm, thickness 80 m, temperature increase, speed 5 ° C / min, tensile mode, 1 〇 Hz, automatic static load) The result was 3 60 MPa at 25 C and 10 MPa at 260 ° C. (Manufacturing Example 4) The Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative was printed on the name of the product produced by Ebike 828 (Japan Epoxy Co., Ltd. (company name, transliteration)) , biphenol A type epoxy resin, epoxy equivalent i90) 45.0 parts by weight, ESVN195 (Sumitomo Chemical Industry Co., Ltd. Product name, o-cresol novolak-type epoxy resin, epoxy equivalent 195) 15.0 parts by weight, Flinder LF2882 (trade name, transliteration) (trade name of the company produced by Otsuka Ink Chemical Industry Co., Ltd., biphenyl A-acid varnish resin) 40·〇 parts by weight, HTR-860Ρ-3 (product name, product name, transliteration), epoxy resin containing epoxy group, molecular weight 100mN/cm, Tg -7°C) 66·7 parts by weight, Qiuer 2PZ-CN ((trade name, transliteration)) (Four countries Huacheng Industrial Co., Ltd. This paper scale applies China National Standard (CNS) A4 specification (210 X 297 mm) 86 313968 091 1287835 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 87 A7 V. Description of Invention (87 ) Product Name, 1-cyanoethyl-2-phenylimidazole) 5 parts by weight, Nuc 八-187 (Japan Unicorn Corporation (company name, transliteration) manufactured under the trade name, 7-methacryloxypropyltrimethoxydecane) 〇 7 parts by weight, and 2_ benzyl 2 dimethylamine-1- ( 4·morpholinyl phenylpyridine “-ketone (produced by Ciba Super Chemical Co., Ltd., trade name: Yierjiaqiu 369 (trade name, transliteration)) · Adding methyl ethyl ketone to the composition consisting of 〇 by weight, stirring and mixing, and performing vacuum degassing. Applying the binder varnish to polyethylene terephthalate with a thickness of 5 〇//m (Dynasty DuPont Film Co., Ltd. (company name, transliteration) production, Dexin Tedron film (Shangkoukou name, transliteration) · G2-50, surface tension: 50dyne / cm), heated at 140 ° C for 5 minutes and dried, and A bonding sheet having a thickness of 50/m in a substrate (ethylene terephthalate film) (the thickness of the bonding sheet excluding the substrate was 50 // m) was obtained (bonding sheet 3). The storage modulus of the bonded sheet 4 at 170 ° C for hardening hours was measured using a dynamic viscoelasticity measuring device (manufactured by Leoji Co., Ltd., DVE-V4) (sample size: The length was 2 mm, the width was 4 mm, the thickness was 8 〇 am, the temperature increase rate was 5 〇 c/min, the tensile mode, 1 〇 Hz, and the automatic static load. The result was 360 MPa at 25 ° C and 14 MPa at 260 ° C. (Production Example 5) Except that in Production Example 1, except that the 2-nitro-T-aminocarboxylic acid derivative (pB-O was changed to the aminoquinone imine compound (PB-2)), the same as in Production Example 1 The same operation was carried out to obtain a 50/zm bonding sheet having a substrate (ethylene terephthalate film) (the thickness of the bonding sheet except the substrate was 50 &quot; m) (bonding sheet 5) _ Using dynamic viscoelasticity measuring device (Leoji company (company, transliteration) production ^ paper scale applicable to the standard (CNS) A4 i: grid (10) X 297 mm)----- 313968 (please read the back first Note on this page)

Ϊ287835

V. Description of the invention (Printed by the Consumers' Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs, DVE-V4), measuring the storage modulus of the bonded sheet 5 at a hardening time of 17 °c (sample size: length 2〇) Lnm, width 4 mm, thickness 80 // m, heating rate 5 ° C / min, tensile mode, 1 〇 Hz, automatic static load), the result is 350 MPa at 25 ° C, 35 MPa at 260 ° C. (Manufacturing Example 6) A substrate (for ethylene succinate) was prepared in the same manner as in Production Example 1, except that 1 part by weight of benzophenone oxime was added in Production Example 1. The thickness of the film was 5 〇 / im of the bonding sheet (the thickness of the bonding sheet except the substrate was 50 / / m) (bonding sheet 6). Storage elastic modulus (sample size: length) when the bonded sheet 6 was hardened at 170 ° C for 1 hour using a dynamic viscoelasticity measuring device (manufactured by Leoji Co., Ltd., DVE-V4) 20 mm, width 4 mm, thickness 80 // m, heating rate 5 ° C / min, tensile mode, ιοΗζ, automatic static load), the result is 350 MPa at 25 aC and 35 MPa at 260 ° C. (Production Example 7) Except that in Production Example 1, the 2-nitroguanidinocarboxylic acid derivative (pB-1)' was changed to an aminoquinone imine compound (PB-3), and the rest was as in Production Example 1. The same operation was carried out to obtain a 50/zm bond piece having a base material (ethylene terephthalate film) (the thickness of the joint sheet other than the substrate was 50 // m) (joining piece 7) . Storage elastic modulus (sample size: length) when the bonded sheet 7 was hardened at 170 ° C for 1 hour using an elastic viscoelasticity measuring device (manufactured by Leoji Co., Ltd., DVE-V4) 20mm, width 4mm, thickness 80m, heating rate 5°C /min, tensile mode, 10Hz, automatic paper scale applicable to Chinese national standard (cns) a4 specification (21〇X 297mm) (please read the back first) Phonetic? Matters fill out this page)

— — — — — — — — — — — — — — — — — — — — — — — I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I (Static load), the result was 350 MPa at 25 ° C and 35 MPa at 260 ° C. (Manufacturing Example 8) Except that in the production example 1, the 2-benzhydryl carbamic acid street organism (pb-1) was changed to imidazolium tetraphenylborate (PB-4), and the rest was carried out as in Production Example 1. In the same operation, a 50/m joint piece having a substrate (ethylene phthalate film) (having a bonding sheet thickness of 50//m other than the substrate) (bonding sheet 8) was obtained. Storage elastic modulus (sample size: length) when the bonded sheet 8 was hardened at 170 ° C for 1 hour using an elastic viscoelasticity measuring device (manufactured by Leoji Co., Ltd., DVE-V4) 20 mm, width 4 mm, thickness 80 vm, heating rate 5 ° C / min, tensile mode, 10 Hz, automatic static load), 340 MPa at 25 ° C and 30 MPa at 260 ° C. (Production Example 9) Except that in Production Example 1, except that the 2_stone base ▼ aminocarboxylic acid derivative (PB-1) was changed to the imidazole gun tetraphenyl borate (PB-5), the same was carried out as in Production Example 1. The thickness of the 5 〇em bonding sheet (the thickness of the bonding sheet other than the substrate was 50 / / m) (bonding sheet 9) was prepared in the same manner as the substrate (ethylene terephthalate film). Storage elastic modulus (sample size: length) when the bonded sheet 9 was hardened at 170 ° C for 1 hour using a dynamic viscoelasticity measuring device (manufactured by Leoji Co., Ltd., DVE-V4) 20 mm, width 4 mm, thickness 80 // m, heating rate 5 ° C / min, tensile mode, 10 Hz, automatic static load), the result was 360 MPa at 25 ° C and 35 MPa at 260 ° C. (Manufacturing example 10) (Please read the notes on the back and fill out this page again)

Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Workers, Consumer Co., Ltd.

By 4 This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 89 313968 1287835 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 90 A7 __________B7___ V. Invention description (9〇) Except in manufacturing example i In the case where the 2-nitroglycolic acid derivative (pB-1) was set to 0. 005 parts by weight, the same operation was carried out as in Production Example 1 to obtain a substrate (p-benzoic acid). The ethylene carbonate film) had a thickness of 5 Å/zm of the bonding sheet (the thickness of the bonding sheet excluding the substrate was 5 〇 ym) (bonding sheet 10). The storage elastic modulus of the bonded sheet 10 at 170 ° C for 1 hour was measured using a dynamic viscoelasticity measuring device (DEO_V4, manufactured by Leoji Co., Ltd.) (sample size: length 2〇) Mm, width 4 mm, thickness 80//m, heating rate 5 cc/min, tensile mode, 1 〇 Hz, automatic static load), 380 MPa at 25 ° C and 30 MPa at 260 ° C. (Production Example 11) Except that in Production Example 1, the 2-nitrobenzylaminocarboxylic acid derivative (PB-1) was set to 150.0 parts by weight, and the same operation was carried out as in Production Example i. A 50/zm bonding sheet (having a bonding sheet thickness of 5 〇em other than the substrate) of the substrate (ethylene terephthalate film) (bonding sheet 11) was obtained. The storage elastic modulus (sample size: length) of the bonded sheet 11 at i7 (hardening at rc) was measured using a dynamic viscoelasticity measuring device (DEO-V4 manufactured by Leoji Co., Ltd.). 20 min, width 4 mm, thickness 80/zm, temperature increase rate 51/min, tensile mode, 1 〇 Hz, automatic static load), and the result was 30 MPa at 25 ° C and I MPa at 260 ° C. (Manufacturing Example 12) In Production Example 1, the 2-stone succinyl carbamic acid derivative (pB-1) was used, and the rest was the same as in Production Example 1, and the f-paper scale was prepared for use in the home standard (cns) A4. Specifications (2) G x 297 public love ---------- 313968 (Please read the note on the back? Please fill out this page again)

1287835 A7 Ministry of Economic Affairs Intellectual Property Bureau Employees Consumer Cooperatives Printing 5, Inventions (91) A substrate (ethylene terephthalate film) with a thickness of 5 〇 / / m bonding sheet (joint sheet other than the substrate) The thickness is 50 / / m) (bonding sheet 12). The gusset 12 was measured at 170 using a dynamic viscoelasticity measuring device (manufactured by Leoji Co., Ltd., DVE-V4). (The storage modulus at the time of hardening for 1 hour (sample size: length 20 mm, width 4 mm, thickness 80//m, temperature increase rate 5 ° C / min, tensile mode, 1 ohz, automatic static load), results It is 380 MPa at 25 ° C and 30 MPa at 260 ° C. (Manufacturing Example 13) 42.3 by weight of YDCN-703 (manufactured by Tohto Kasei Co., Ltd., trade name: Azure Age aldehyde varnish type epoxy resin, epoxy equivalent 210) , Flüd LF2882 (trade name, transliteration) (trade name of Otsuka Ink Chemical Industry Co., Ltd., biphenyl phthalate varnish type resin) 23.9 parts by weight, HTR·860P-3 (Nagahim Dirk Company (company name, transliteration) product name, epoxy-containing acrylic rubber, molecular weight lOOmN/cm, Tg_7 °C) 44 1 part by weight, Qiuer 2PZ-CN ((trade name, transliteration)) (Shikoku Chemical Industrial Co., Ltd., manufactured under the trade name, 1-cyanoethyl-2-phenylimidine) 〇·4 parts by weight, NUC Α-187 (Japan Unitek Corporation (company name, transliteration) products Name, methacryloxypropyltrimethoxydecane) 〇·7 parts by weight, 4G (trade name of New Nakamura Chemical Co., Ltd., tetraethylene glycol dimethyl a propylene group) 22 〇 5 parts by weight and a 1-hydroxycyclohexyl ketone 0.5 parts by weight of a ruthenium-containing compound, and a mixture of methyl ethane _ is added, stirred and mixed, and vacuum degassing is applied. On a polyethylene terephthalate sheet having a thickness of 50/m, it was dried by heating at 140 C for 5 minutes to obtain a thickness of 50 Å bonded to a substrate (ethylene benzoate film). Sheets (except for the substrate) ^ Paper size is applicable to the National Standard (CNS) A4 specification (21〇X 297 mm) ^ 91 313968 (please read the notes on the back and fill out this page)

I------book----! ! Line — . 1287835 A7 V. INSTRUCTIONS (92 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed sheet thickness 50 * m) (joint piece 13). The storage elastic modulus (sample size: length) when the bonded sheet 13 was hardened at 170 ° C for 1 hour was measured using a dynamic viscoelasticity measuring device (DEO-V4 manufactured by Leoji Co., Ltd.). 20 mm, width 4 mm, thickness 80 // m, heating rate 5 ° C / min, tensile mode, 10 Hz, automatic static load), the result was 400 MPa at 25 ° C and 50 MPa at 260 ° C. (Production Example 14) 50 parts by weight of the poly(imineimine resin) obtained in Production Example 6 and 10 parts by weight of an o-cresol novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: ESCN-195), Tetraphenyl sulphate tetraacetate (produced by Beixing Chemical Co., Ltd., trade name · ΤΡΡΚ) 0·2 parts by weight, and 2·nitroguanidinocarboxylic acid derivative (ΡΒ-1) obtained in Synthesis Example 1 2 parts by weight of 200 parts by weight of hydrazine-methyl-2-pyrrolidone added to the solvent and dissolved. It is sufficiently mixed and uniformly dispersed to obtain a binder varnish. This adhesive varnish was applied to polyethylene terephthalate (50 pm) in thickness (Dynasty DuPont Film Company (company name, transliteration), Dexin Tedlon film (trade name, transliteration): G2_ 50 , surface tension: 50 dyne / cm), heated at 140 ° C for 5 minutes and dried to obtain a thickness of 5 〇em bonding sheet with a substrate (ethylene terephthalate film) (except for the substrate) The outer bonding sheet has a thickness of 5 〇 #m) (bonding sheet 14). (Production Example 15) Except that in Production Example 14, the 2-nitroguanidinocarboxylic acid derivative (pB-1) was changed to 2-T-methyl-2-dimethylamine-1-(4-morphinylphenyl). Butanone (produced by Ciba Super Chemical Co., Ltd., trade name: Iljiaqiu 369 (trade name, transliteration)) 92 313968 (please read the notes on the back and fill out this page)

-IIIII 丨—订·1111111· ^^Li 1287835 :9 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing Θ 93 A7 ------___ V. Invention description (93) —~ ' ~-- The rest were carried out in exactly the same manner as in Production Example 14, and the thickness of the base material (ethylene terephthalate phthalate) was 50 core-jointed sheets (the thickness of the joint sheet other than the substrate was 5 〇 ^ m) ( Bonding sheet 15). (Production Example 16) Except that in Production Example 14, the 2-nitrosylcarbamic acid derivative (pB-1) was changed to the aminoquinone imine compound (PB_2), and the rest was completely carried out as in Production Example 14. In the same operation, a bonding sheet having a thickness of 50/m (a thickness of the bonding sheet other than the substrate of 50//m) (bonding sheet 16) having a substrate (ethylene terephthalate film) was obtained. (Production Example 17) A substrate (the epoxy film of the present diester) was obtained by performing the same operation as in Production Example 16 except that in the production example 16, 05 parts by weight of benzophenone oxime was added. The thickness of the 5 〇em bonding sheet (the thickness of the bonding sheet other than the substrate is 50 / / m) (bonding sheet 17). (Production Example 18) Except that in Production Example 14, the 2-nitroguanidinocarboxylic acid derivative (PB-1) was changed to the aminoquinone imine compound (PB-3), and the others were as in the production example. 14 The same operation was carried out to obtain a thickness 50 bonding sheet (having a bonding sheet thickness of 5 〇em other than the substrate) having a substrate (ethylene terephthalate film) (bonding sheet 18). (Production Example 19) Except that in Production Example 14, except that the 2-nitro-T-aminocarboxylic acid derivative (PB-indole was changed to the imidazole gun tetraphenylborate (PB-4), the rest was as in Production Example 14 Perform the exact same operation and obtain the substrate (Through in terephthalic acid paper with Chinese National Standard (CNS) A4 specification (210 X 297 public Chu)&quot;&quot;''&quot; 313968 C Please read first Phonetic on the back? Matters again on this page}

1287835 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 94 A7 B7 V. INSTRUCTIONS (94) Ethylene Diester Film) Thickness 50 Bonding Sheet (bonding sheet thickness other than substrate 50// m) (bonding sheet) 19). (Production Example 20) Except that in Production Example 14, except that the 2-nitro-glycinecarboxylic acid derivative (pB-1) was changed to imidazolium tetraphenylborate (PB-5), the rest was as in Production Example 14. The same operation was carried out to obtain a 50/zm-bonded sheet having a substrate (ethylene terephthalate film) (the thickness of the bonding sheet excluding the substrate was 50 m) (bonding sheet 20). (Production Example 21) 50 parts by weight of the polyimine resin (PI-2) obtained in Production Example 7, and an adjacent age-old vine-type epoxy resin (manufactured by Sakamoto Chemical Co., Ltd., trade name: ESCN- 195) 13 parts by weight, phenol novolac resin (manufactured by Mingwa Chemical Co., Ltd., trade name · Η-1). 6.9 parts by weight, tetraphenyl quaternary tetraphenyl borate (produced by Beixing Chemical Co., Ltd., trade name: ΤΡΡΚ) 0·13 parts by weight, and 2-▼-yl-2-dimethylamine-1-(4-morpholinylphenyl)-butan-1-one (produced by Ciba Super Chemical Co., Ltd., trade name: Il Jiaqiu 369 (trade name, transliteration)) 4.0 parts by weight, added to 200 parts by weight of N-methyl-2-indolerolone in a solvent and dissolved. It is thoroughly stirred to uniformly disperse it to obtain a binder varnish. This binder varnish is applied to polyethylene terephthalate having a thickness of 50/m (Dynasty DuPont Film Co., Ltd. (company name, transliteration)), New Tedron film (trade name, transliteration) · G2-50, surface tension: 50dyne/cm), dried at 150 ° C for 20 minutes and dried to obtain a substrate (ethylene terephthalate) The vinegar film has a thickness of 50 / / m of the bonding sheet (the thickness of the bonding sheet other than the substrate is 50 vm) (bonding sheet 21). Production paper scale suitable for the wealth of the standard ^iA4 specifications coffee x 297 public)) ~~-- 313968 (please read the back of the note? Please fill out this page)

1287835

V. Description of Invention (95 Printed by the Consumers' Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs (Manufacturing Example 22) Except for the production example 15, 2-benzyl-2-dimethylamine-1-(4-morphinylphenyl) -but-1-one (produced by Ciba Super Chemical Co., Ltd., trade name: Iljiaqiu 3 69 (trade name, transliteration) is set to 〇〇〇4 parts by weight, and the rest are as complete as the manufacturing example 1 5 In the same operation, a bonding sheet having a thickness of 50//m (a thickness of a bonding sheet other than the substrate of 50 // m) (bonding sheet 22) having a substrate (ethylene terephthalate film) was obtained. (Production Example 23) In the production example 15, 2-T-based-2-dimethylamine-1·(4-morpholinylphenyl)-butan-1-one (manufactured by Ciba Super Chemical Co., Ltd., product) Name: Iljiaqiu 369 (trade name, transliteration) was set to 12 parts by weight, and the rest was performed in exactly the same manner as in Production Example 15, and a substrate (vinyl terephthalate film) was obtained. A thickness of 50 / / m of the bonding sheet (the thickness of the bonding sheet other than the substrate is 50 / / m) (bonding sheet 23). (Manufacturing Example 24) Except that in Production Example 14, 2-nitrobenzylamine was not used. Carbamate derivative (PB-1) In the same manner as in Production Example 14, the same operation was carried out to obtain a bonding sheet having a thickness of 50//ηι provided with a substrate (silicone terephthalate film) (the thickness of the bonding sheet except the substrate was 50/ /m) (bonding sheet 24). (Manufacturing Example 25) 5 parts by weight of the polythenimine resin (ρΐ-3) obtained in Production Example 8, o-cresol novolac type epoxy resin (Nippon Chemical Co., Ltd.) Production system, trade name: ESCN-195) 13 parts by weight, phenol novolac resin (manufactured by Mingwa Chemical Co., Ltd., trade name: Hl) 6.9 parts by weight, and tetraphenyl quaternary tetraphenyl borate (North • This paper scale applies China National Standard (CNS) A4 specification (21〇X 297 public 95 313968 (please read the note on the back and fill out this page)

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1287835 A7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (96) Xing Chemical Co., Ltd., product name · · τρρκ) ο 13 parts by weight, added to the solvent of Ν-methyl-2-pyrrolidone 200 It is dissolved in parts by weight. This was thoroughly stirred to uniformly disperse to obtain a binder varnish. This adhesive varnish was applied to polyethylene terephthalate (Centre DuPont), produced by Teijin DuPont (Company Name, Transliteration), Dexin Tedlon Film (trade name, transliteration)·· G2-50, surface tension: 50dyne/Cm), dried at 15 (rc) for 2 minutes, and dried to obtain a 50//m bond piece having a substrate (ethylene terephthalate film). (The thickness of the bonding sheet excluding the substrate was 5 Å from m) (bonding sheet 25). The bonding sheets 1 to 25 obtained in Production Examples 1 to 25 were as shown in Examples 1 to 4 and Comparative Examples as follows. Evaluation was carried out from 1 to 11. (Examples 1 to 11) Using the bonding sheets 1 to 11 obtained in Production Examples 1. to 11, a semiconductor wafer and a 25/zm thick polyimide film were bonded to the substrate by a bonding sheet. On the wiring board of the material, a sample of the semiconductor device was fabricated (the solder ball was formed on one side), and then the heat resistance and the moisture resistance were investigated. The heat resistance evaluation method was carried out using the reflux crack resistance and the temperature cycle test. The evaluation of the sample is carried out at a maximum surface temperature of 240 ° C, and the sample is passed in such a way that the temperature is maintained for 20 seconds. The IR (infrared) reflow furnace, which has been set to a temperature, was placed at room temperature for cooling. After repeating this treatment twice, the crack in the sample was observed by a visual and ultrasonic microscope. The probability of no cracking occurred ( %/100 wafer). The temperature cycle resistance is to place the sample in the _55 ° C environment for 30 minutes, and then in the 125 ° C environment for 30 minutes, as a cycle, repeating 1 〇〇〇 After the second cycle, observe with an ultrasonic microscope and apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) % 313968 on this paper scale (please read the notes on the back and fill out this page)

-I ^ ϋ ft - I I ϋ · 1 I I ϋ I I I i i-i ^ I I ϋ ϋ · 97 1287835 V. Description of the invention (97) The probability of occurrence of damage such as peeling or cracking (%/100 wafer) is expressed. The moisture resistance evaluation was carried out at a temperature of 12 rc, a humidity of 100%, and a pressure of 2.03 X 105 pa % (South Pressure Cooking Test · PCT Pressure Steel Test Pressure Cooker Test), and the peeling phenomenon was observed after 72 hours of treatment. It is expressed as the probability of no peeling (%/100 wafer). Further, the bonding sheets 1 to 11 were attached to a tantalum wafer having a thickness of 150/zm, and the Shishi wafer to which the bonding sheet was attached was placed on the cutting device. Secondly, after fixing the semiconductor wafer on the cutting device and cutting it to 5mm x 5mm at a speed of 100mm/sec, the UV-330 HQP-2 type exposure machine manufactured by Walker (company name, transliteration) is based on 500mJ/ The cm2 exposure was exposed from the support film side of the bonding sheet, and the cut wafer was picked up by a pick-up device to evaluate wafer scattering and picking during cutting. The wafer scattering probability (%/1 〇〇 wafer) at the time of dicing indicates that the wafer at the time of dicing is scattered, and the diced wafer is picked up by picking up the wafer bonding machine (picl &lt;&gt;up die b〇nder) The probability (%/1〇〇 wafer) can be captured, indicating readability. Further, the wafer having the bonding sheet was exposed from the supporting film side of the bonding sheet by an exposure amount of 500 mJ/cm 2 to adjust the bonding strength of the bonding sheet/substrate interface before and after the exposure. The peel strength was measured (stretching speed 50 mm/min). The results of the evaluations are summarized as shown in Table 4. (Comparative Examples 1 to 2) The bonding sheets 12 and 13 obtained in the manufacturing examples of the 12th and 13th were the same conditions as in the first embodiment. to evaluate. The results are shown in Table 4. The paper-making scale applies to the Chinese National Standard (CNS) A4 4_ grid (21G X 297 public recovery &quot; 7 313968 (please read the back note first and then fill out this page)

^---------$ ------------------------- 1287835 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Printed A7 B7 Five (Inventions (98) (Examples 12 to 21) The bonding sheets 14 to 23 obtained in the manufacturing examples of the 14th to 23rd were evaluated under the same conditions as in the i-th embodiment. The results are shown in Table 5. (Comparative Examples 3 to 4) The joined sheets obtained in Production Examples 24 and 25 were evaluated under the same conditions as in the first embodiment. The last name /, and the m fruit are shown in Table 5. (Please read the phonetic on the back first? Please fill out this page again)

1287835 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (99) Table 4 90.雠魅1 (mN/cm) wafer flying during fine cutting: and ready-made ageing film] m exposure wire 1 exposure gauge 1 咏跋 性 咖 咖 8 1 Ds Q- D§ Ss Ds 脒Ϊ 1 Wen 1 Ss D-Ds Ss Ss K) | 2nd to 1st Ss Q. Ss D§ Ds U) 1 3rd Griffin J| 1 Q§ Q. Ss Ds Qs 払 4th Lion·]| 1 〇 8 Q. Ss Qs Ds 5th Griffin | 8i 1 Ds Q- Q§ S§ Ss On 6th Potential | 1 Q§ S- S§ D§ Qs 7th Griffin J § D§ D- Qs Ds S§ 〇〇 8th Griffin | 1 Ds S- D§ Ds Ss VO 9th Lion '1 8 igg D° Ss S§ Ss 10th Potential Group || SU) a Ss S° g Dl ga Η-» 丨11th Lion丨| »—» Η-» s Ss Ss Ds l〇第11:_ S i D§ D° O and 〇 father o Cj 2nd look (please read the phonetic on the back? Please fill out this page) -- ------Set---------Line-t Paper scale applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 99 313968 1287835 A7 _ B7 V. Invention description (100) Table 5 5 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 10 li II f Mold 4 $ w 1 ! nn lg I Anise 1 I s§ Q. Ss Ss Ss | I Qs Q° Ds s§ Ss Di Pu f Double Di I Ss S- Ds Os Ss 1 i Ds S° Qs Ss Ds - Pu ui I Ss D- D§ Ds Ds 00 Forbidden ID § D° D§ D§ Ss v〇f 4f i Ss S° S§ Ss Ss i Ds S° Qs 〇8 S§ f 8 I D- Ss Ss Ss K 1 D§ D- g Di &gt; ^ I 1—» S § S〇D§ Ss Ss η rr 1 8 »—» 8 1 2§ f xr f (Please read the notes on the back and fill out this page)

This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 100 313968 1287835 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed Clothing 101 A7 ------B7 _ V. Invention Description (1 ( 1) One &quot; As seen in Tables 4 and 5, the bonding sheet of the present invention has excellent heat resistance and moisture resistance, and has no wafer scattering phenomenon at the time of cutting, and pickability is also good. In addition, since the difference in joint strength before and after exposure is large, the work condition has a large margin and is excellent in workability. (22nd embodiment) The adhesion strength, the flow amount, and the melt viscosity of the bonding sheet j obtained in Production Example j after irradiation with a crucible were measured under the following conditions. The evaluation results of Tables 4 and 5 above are collectively shown in Table 6. (1〇)' Adhesive strength The adhesion strength of the adhesive layer of the above-mentioned bonding sheet 1 was measured at 25 ° C by an adhesion tester manufactured by RHESCA Co., Ltd. according to the method described in JIS Z023 7_1991. The measurement conditions were probe diameter 5, peeling speed 10 mm/s, contact load 9·81 χ 103 Pa (100 gf/cm 2 ), contact time 1S 〇 (2 ) 'flow amount, and the above-mentioned joining piece 1 was cut into l〇x 20 mm size. And placed on the carrier glass in such a manner that the bonding sheet is in close contact with the adhesive layer side, and is subjected to a thermocompression bonding test device (manufactured by Daske Industry Co., Ltd. (company name, transliteration)) at 160 ° C, 0.8 Under MPa, pressurize for 18 seconds, measure the length distance from the initial size to the periphery for the 4 samples from the end of the 20 mm long piece, measure 2 points for each sample, measure 8 points in total, and then measure the average The amount of flow formed by the value. (3) 'The melt viscosity will be 8 layers on the adhesive layer of the above-mentioned bonding sheet 1, and the thickness of the paper is made to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 313968 f Please read the back Please fill out this page again)

1287835

V. INSTRUCTIONS (1〇2) A film of approximately 400 // m is then drilled into a circle of diameter H 3 mm and pressed as a sample at a pressure of 24.5 N (2.5 kgf) at 160 C for 5 seconds. The thickness was measured from the thickness before and after the press using a parallel plate plastometer method, and the melt viscosity (β) was calculated according to the following formula. Χ-η-

3V^ 8ttF Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff Cooperatives (where zo is the thickness of the bonding film before applying the load; z is the thickness of the bonding film after the load is applied; V is the volume of the bonding film, F system The application of the load; t means the time at which the load is applied) (Examples 23 to 25) The adhesion strength, the flow amount, and the melt viscosity before and after the radiation irradiation of the bonding sheets 2 to 4 obtained in Production Examples 2 to 4 are as follows. The measurement was carried out under the same conditions as in the twenty-second embodiment. The results are shown in Table 6. (Examples 26 to 29) The adhesion strength, the flow amount, and the melt viscosity before and after the irradiation of the bonding sheets 14 to 17 obtained in the production examples of the 14th to 17th were measured under the same conditions as in the twenty-second embodiment. The results are shown in Table 6. (Comparative Example 5 to 6) The adhesion strength, the flow amount, and the melt viscosity before and after the irradiation of the bonding sheets 12 and 25 obtained in the manufacturing examples of the twelfth and twenty-fifth embodiments were measured under the same conditions as in the twenty-second embodiment. The results are shown in Table 6. .&gt;The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 102 313968 (please read the notes on the back and fill out this page)

1287835 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (K) 3 ) Table 6

Wafer scattering during cutting. Moisture resistance Heat resistance I Melt viscosity (Pa.s) Flow amount (/zm) Adhesion strength (N) f. g 1 Bonding sheet 1 A m Temperature-resistant circulating resistance Resistant to cracking After radiation irradiation - Before radiation irradiation I After radiation exposure Before radiation exposure (B2) After radiation exposure - Before radiation exposure 1 After radiation exposure i 1 Before radiation exposure (Bl) I After radiation exposure - Before radiation exposure | After radiation exposure | ί Before radiation exposure (Α2) 1 After radiation exposure - Before radiation exposure Before radiation irradiation / After radiation irradiation before radiation irradiation | Before radiation exposure (Al) I s § D- Ds Ds Ss 00 go 〇 ON 1 1200 I 1700 δ Ln 3920 〇S 4000 | 1—* 22nd drowning | D§ Q. Ss Ds Ss 〇〇Ln σ\ g &lt;x 〇bi I 1400 I 1800 〇U) c: 3935 PS Os 4000 | S) 23rd real township j Qs S- S§ Ds Ds — ο Di O Di ο 1 1200 I 2000 J 1: 〇U) Ln 3920 〇S g 4000 | U) 24th balance column j D§ D- Ss Ds Ss a ο 00 og 〇as U) I 1200 I 1 1800 I 〇U) 3825 〇 〇K) D! 4000 | 25th embodiment | S§ S° Ss Ds Ds ρο oo Lh o I—1 sp V〇1 1150 1 1400 JH—» 〇k&gt; 3920 ·〇§ (X 4000 | ►j- * s 26th embodiment | D§ s° S§ S§ p§ bo 00 g H-* a o »—* 1 1200 1 | 1600 I a ο to Η-» to 3930 〇S 4000 |丨J| Qs D° Ss Ss D§ VO b VO o H-» oo bi lioo 1 1400 1 ο ki to 3925 PS 4000 | 28th real bubble J| S§ S° Ss Ss D§ — o I lioo H -* o O ON 1 looo 1 | 1400 1 H—* ο k) k) 3935 〇S ON LT\ 4000 | -J 29th acne X 〇Ss Ds Ds »—* o Η-» soso 〇ο o 〇I—* 〇So o TO !〇5th look “J 1 &gt; g &gt; g ^^ &gt; go Hk g (X 〇ο ο po 〇〇o 1—* o N) Lh 6th earn|J (Please read the note on the back first? Then fill out this page)

μ r, the paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) i ... 103 313968 1287835 A7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (1〇4) From Table 6 It has been found that the bonding sheet of the present invention is superior in adhesion to the wafer before exposure, and therefore does not cause wafer scattering during dicing. Further, in the bonding sheet of the present invention, since the bonding strength between the semiconductor wafer interfaces after irradiation with radiation is greatly reduced, the pick-up property is also excellent. Further, in the bonding sheet of the present invention, since the film before and after the radiation irradiation has less reduction in the mobility of the IL, it is known that the reliability such as heat resistance and moisture resistance is good. (Thirtyth Embodiment) The bonded sheet i obtained in the first production example was exposed to a UV-330 HQP-2 type exposure machine manufactured by Walker Co., Ltd. (company name, transliteration) at 500 mJ/cm2. The support film side was exposed, and the adhesion strength after radiation irradiation was measured as in the twenty-second embodiment. Further, the bonding sheet 1 was exposed as described above, and a dynamic viscoelasticity measuring device (produced by Leoji Co., Ltd., DVE-V4, automatic static load) was used to measure the radiation before and after the irradiation. Tan accounts for and stores the elastic modulus. The reliability evaluation results shown in Table 4 and Table 5 are collectively shown in Table 7. Sample size·length 20 mm, width 4 mm, film thickness 80 vm Heating rate: 5° C./min Measurement mode: Tensile mode frequency: 10 Hz (31st to 33th embodiments) The bonded sheets produced in the second to fourth manufacturing examples were prepared. The adhesion strength, tan 5 and storage elastic modulus before and after radiation exposure of 2 to 4 are as in the third implementation. This paper scale applies the Chinese National Standard (CNS) A4i (2) 〇 x 297 public)------ - (Please read the notes on the back and fill out this page)

--------^---------^ 1^ 104 313968 1287835

V. Description of the invention (Measurement is performed under the same conditions. The reliability evaluation value shown in Table 4 of Table 4 is shown in Table 7. (Examples 34 to 37) Will be 14th to 16th The adhesion strength, u, and storage modulus before and after radiation irradiation of the bonding sheets 14 to 16 and 21 prepared in the manufacturing example and 21 were measured as in the 30th solid phase (4) condition. The reliability evaluation results are shown in Table 7. (Comparative Examples 7 to 9) The adhesion strengths before and after the irradiation of the bonding sheets i2 i3 and 25 prepared in the twelfth, thirteenth and twenty-fifth manufacturing examples were And the storage elastic modulus was measured under the same conditions as in the thirty-seventh embodiment. The results of the reliability evaluations shown in Tables 4 and 5 are collectively shown in Table 7. Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative Moderate ruler paper, PCT 97 2 X 10 2 /V Grid A4 S)AN (C Pre-standard country 105 313968 (please read the phonetic on the back? Please fill out this page again)

1287835 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (K) 6) Table 7 钵back w ^ 3Ϊ w 谇w 〇7 ο ^ 髂耜 髂耜 on on B 漭鸯 : g 〇 ° 5 : 〇 〇 ° ';§ vw^ *2μ § Roughing is ι—* g 〇° 5: Holding o° .NhiK &gt;—* ο |S 涸獬郅 涸獬郅•涵 S 5:莱η ® 辂洇5: Department Q§ D§ S§ Qs υ: p ui ο U) ο 1— K) 〇U) 1—* ih U) vo 1〇〇ο 1 〇 8 Ds Qs Ss ο g ο U) ο I—4 io 〇u&gt; I—^ U u&gt; Ό OJ L/i Lh 払ο ο ιο I 1 Ds Ss Ds Ss 〇NO i: p I—* 00 ο Η-» b〇〇U) 1—» In U) v〇ls^ Ο g Ο ο U) 铖Id 1 S§ Ss S§ Qs a p 1—* Ul ο u&gt; ο Η-» to PU) »—» Lh UJ 00 Κ) LT\ D!仁ο ο 払f 〇8 Ds Qs Ds Ι1Λ 〇〇H-* ΙΙΛ ο b Η-* o L〇o ο h—fc •Ο 〇i〇—k) U) v〇o 払ο ο ►—kfis§ Ds Ds Ss ΙΙΛ 〇〇ΙΙΛ ο ο — ow ο UJ ο Η-» b Ο κ&gt; I-» U) U) o ren ο I-» Ul 铖1 Ds Ss S§ Ds ΙΙΛ 〇〇ΙΙΛ ο — ow ο OJ ο 1—* b ο k) H-* k) U) v〇N) Ui Di 4^ ο ο Os i 1 S§ S§ 0 8 Ss ΙΙΛ 〇〇ΙΙΛ ο ο 1—* o U o ο 。 。 。 。 。 。 » gc XT 1 Q§ Ξ 0 and o Xs o 〇ob cn ο U) ο 1—* U) Os ο ο — ▲ U) v〇U) g Ο ο 1—k u&gt; 茕rr 1 1 &gt; s &gt; g &gt; ^ o § ρ O ο ο 〇oo &gt;—* o ο to 笤rr 1 (Please read the notes on the back and fill out this page)

Order ---------Line J

, 4 &gt; paper scale applicable to China National Standard (CNS) A4 specification (210. X 297 mm) r v r 106 313968 1287835 A7

107 313968 1287835 A7 B7 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 108 V. INSTRUCTIONS (108) Table 8. (Third and eleventh comparative examples) The storage elastic modulus of the bonded sheet 12 obtained in the twelfth and thirteenth manufacturing examples before and after the n-ray irradiation, the radioactive storage modulus at the time of hardening for 170 hours at 170t, the flow amount after radiation irradiation, and The joint strength under the adhesive layer of the melting point is the same as that of the 38th embodiment: The results shown in Table 4 and Table 5 are shown together in Table 8.私 Private paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 313968 (Please read the note on the back and fill out this page)

1287835 A7B7

Ministry of Economic Affairs, Intellectual Property Bureau, employee consumption cooperative, printing

Bonding strength 1 Wafer scattering during picking cutting j. Wet viscosity after radiation exposure (160 ° C, Pa.s) (F) Flow amount after radiation exposure (160 ° C, in m) _ (Q_ Storage Elasticity (MPa) Bonding Sheet 1 Item I 250 ° C, N/wafer temperature resistance Cyclic resistance to reflow cracking hardening. Radiation before radiation exposure 1 260 〇c ί 1 50 °c 1 \ 25 °c 1 180°C (G) | 50°c 1 1 ioo°c 1 1 50°c| H-» s§ D- S§ Qs Ds 800 1 1200 W a U) s I—* b; δ 00 1— 1 1 38th Embodiment 1 - D§ S- Ds Ds D§ 1 680 State i 1400 ΙΟ Lh § 1 350 1 - δ 00 N) 丨 39th embodiment I 00 Ds Q. Ss 〇8 Ss 750 1200 »—* § s s Ui u> 40th submerged case I VO Ss S- Ds Ds Ss ] 800 1200 320 | s ρ σ\ 41婉歹丨j| 〇〇 D§ Q. Ss Ds Ds 850 1150 οο Ο 1 ^0.01 l_ o.oi 1 ro 42nd embodiment | 〇〇S§ S- Ds Ds Ds 860 1200 οο — 200 1 ^0.01 o.oi 1 to 43th embodiment | 00 Ds S- Ds Ss Ss 900 1100 οο a ί 200 j ^0.01 1 o.oi 1 K) Ss 44th embodiment | 00 Ss S- S§ D§ Ds 1100 1000 νο ί 1 220 1 ^0.01 5: o. Oi 1 to — 45th embodiment | — x〇Q§ Ds Ds 500 I—* U) ΟΟ ο 1—* 00 ο 00 00 ίο 10th^f column | | 0.05 D§ D- x' O Xs o ο Η-» (X 400 1 200 200 ο bo 00 The 11th edition 1 The paper scale applies to the Chinese National Standard (CNS) A4 specification (210 297 297 mm)

109 313968 1287835 A7 Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperatives Printing V. Invention Description (UO) It is known from Table 8 that the bonding sheet of the present invention has a low decrease in fluidity of the film before and after radiation irradiation, so heat resistance Excellent reliability such as moisture resistance. Further, since the storage elastic modulus before and after the radiation irradiation is large, there is no phenomenon that the wafer is scattered during the cutting, and the picking property is also superior. &lt;Evaluation method&gt; (1) The storage modulus is measured by a dynamic viscoelasticity measuring device (produced by Leoji Co., Ltd., DVE_V4), and the storage modulus of the bonded sheet is measured (sample size: length 20 mm, Width 4 mm, film thickness 80 // m, heating rate 5 ° C / min, tensile mode, 10 Hz, automatic static load). (2) The flow amount is measured from the adhesive layer and the substrate layer (PET film (produced by Teijin DuPont Film Co., Ltd., company name, transliteration), Dexin Tedlon film (trade name, transliteration) · G2- 50), and the thickness (the thickness of the bonding sheet except the substrate layer) 5 〇 "the interface piece of the melon" punched into a lx 2cm rectangular piece, thereby preparing a rectangular piece s of size 2cm. Then hot pressing In the test device (Staida Industries Co., Ltd.), the rectangular piece s sample s was placed on a platform heated to 160 ° C, and a pressure of 88 MPa was applied. Then, from After the sample S was taken out from the thermocompression test apparatus, as shown in Fig. 12, in the resin exuded from the end of the long piece (2 cm side) of the sample 8, the optical microscope was used to measure numbers 55 and 56 as shown in the figure. The osmotic length distance between the number 1 and the number 2 (the length direction 〇. This operation is performed for 4 samples, and the average of the bleed distances is obtained. _ ¥__ is the average of 1 point total 8 points distance Value, and use this as a flow. ^ Paper scale applies National Standards (CNS) A4 size ⑵G χ 297 male meal y ------- 110 313968 (please read the back of the phonetic? Matters then fill out this page)

Order ---------Line L- 1287835

V. INSTRUCTIONS (m) (3) Melt viscosity The melt viscosity of the joint sheet is measured by a parallel plate plasticity meter and the calculated value is used. 8 sheets of bonded sheets were laminated to form a film having a thickness of about 400 // m, which was drilled into a circular shape of diameter u 3 ηηπ1 and used as a sample, and pressed at a load of 2.5 kgf for 5 seconds at 160 ° C, from pressurization. The thickness of the sample before and after, the melting viscosity was calculated by the formula 1. 3V^ 8πΡ 1 1 ^ ζ4 v j (Please read the notes on the back and fill out this page)

Printed by the Ministry of Economic Affairs Intellectual Property Office employee consumption cooperative (where ZO is the thickness of the joint before applying the load; z is the thickness of the joint after the load is applied; V is the volume of the joint; F is the applied load; F means the applied load; t means the time when the load is applied) (4) The gold plating peel strength (joining strength) On a hot plate at 120 °C, the wafer (5 mm square) and the gold-plated substrate (with copper foil flexible) The substrate gold plating (Ni: 5//m, Au: 0.3//m) was laminated on the bonding sheet, and baked at 130 ° C, 30 min + 17 (rc, 1 hour). For this sample, the normal state was measured. After moisture absorption (85/85, 48h), 25 (peel strength under TC. (5) Resistance to reflow cracking and temperature cycle resistance (test) UV-330 manufactured by Walker (company name, transliteration) A HQP-2 type exposure machine was used to form a semiconductor element, a bonding sheet, and a 25/m thick polyimide film by using a bonding sheet exposed from the supporting film side of the bonding sheet at a exposure amount of 500 mJ/cm 2 . a semiconductor device sample on a wiring substrate used in a substrate (single-sided solder balls are formed), and then This paper check heat scale applicable Chinese National Standard (CNS) A4 size (210 X 297 mm) 111 313 968

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[287835 Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives Printed by the Chinese Standard (CNS) A4 Specification (2) G χ 297 Meals f 112 A7 B7 V. Invention Description (m) Sex and moisture resistance. The heat resistance evaluation method can be carried out by using the resistance to reflux cracking and temperature cycling. The evaluation of the resistance to reflow cracking is based on J-STD-020A specified in the JEDEC standard, and is applied to a semiconductor device sample that is subjected to moisture absorption treatment (85 ° C, 85% RH, 168 hours) equivalent to the second stage. The sample is passed through a set temperature IR reflow oven at a temperature of 265 ° C above the temperature of 265 ° C for 1 〇 to 20 seconds, and then placed at room temperature for cooling. After repeating this treatment twice, The cracks in the sample were observed using a visual and ultrasonic microscope. Those who do not have cracks are indicated by "〇", and those who have cracks are indicated by "X". The temperature cycle resistance is to place the sample in the -55 ° C environment for 30 minutes, and then in the 125 7 environment for 3 minutes, this step is a cycle, repeating 1 cycle, using ultrasonic microscopy Observe the damage such as peeling or cracking. If it is not produced, it will be indicated by "〇", and if it is produced, it will be represented by "x". (6) Evaluation of moisture resistance At a temperature of 121 ° C, a humidity of 1〇〇%, and a 2.03x 105pa environment (high pressure cooking test: PCT treatment), the peeling phenomenon was observed after 72 hours of treatment. Those who have not found the stripper are indicated by "〇", and those who have been stripped are indicated by "χ". (7) Wafer scattering and pick-up at the time of cutting The bonding sheet was attached to a crucible wafer having a thickness of 1 50 // m, and the crucible wafer to which the bonding sheet was attached was placed on the cutting device. Next, after the semiconductor wafer was fixed on the cutting device and cut into a square of 5 mm x 5 mm at a speed of 10 nm/sec, the UV-330 HQP-2 type exposure machine manufactured by Walker Co., Ltd. (company name, transliteration) was used. According to the exposure of 200〇mJ/cm2 from 313968 (please read the phonetic on the back? Please fill out this page again)

1287835 V. INSTRUCTION OF THE INVENTION (113) The support film side of the bonding sheet is exposed, and the cut semiconductor element is picked up by a pick-up device, and the wafer scattering and picking at the time of cutting are evaluated. The pick-up wafer picker is used to indicate the pick-up probability (%/100 semiconductor component) when the diced semiconductor component is picked. (8) Storage elastic modulus, tail (5 using dynamic viscoelasticity measuring device (Leoji company (company name, transliteration) production, D VE-V4, automatic static load), and measuring the adhesive layer according to the conditions shown below Storage modulus and tan of 11 (5. Sample size: length 20mm, width 4mm, film thickness 80 am, heating rate 5 °C / min, measurement mode: tensile mode, frequency ··) 〇Hz (9) 90° peeling Strength (bonding strength) The bonding sheet was laminated on the semiconductor wafer at 120 ° C in a manner of sandwiching the adhesive layer. Then, the germanium wafer with the bonding sheet was exposed to 500 mJ/cm 2 . The bonding sheet was exposed from the substrate side and pressed according to the peel strength. The bonding strength (stretching speed: 50 m/min) of the adhesive layer/substrate interface before and after exposure was measured. (10) Adhesive strength Ministry of Economics The property bureau employee consumption cooperative printed and tested using the adhesive tester manufactured by RHESCA, and measured the adhesion strength at 25 °C according to the method described in JIS Z0237-1991. Probe diameter: 5.1 mm p, peeling speed :1 〇mm/s, contact load 100gf/cm2, contact time Is (11) Evaluation of heat resistance and moisture resistance UV-330 HQP manufactured by Walker (company name, transliteration) - This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 public) 113 313968 1287835 Invention (114) A type 2 exposure machine, which uses a bonding sheet exposed from a support film side of a bonding sheet at an exposure amount of 500 mj/cm 2 to fabricate a semiconductor element, a bonding sheet, and a polyimide film having a thickness of 25 vm. A sample of a semiconductor device attached to a wiring board used in a substrate (a solder ball is formed on one side) under conditions of 18 〇, 〇 4: Nr, 5 seconds, and then investigation of heat resistance and moisture resistance The heat resistance evaluation method can be used for the resistance to reflux cracking and temperature cycle resistance. The evaluation of the resistance to reflux cracking is based on the J-STD G20A specified in the JEDEC specification, and is applied to the moisture absorption equivalent to the second grade. Processing (85 art, 85% RH '168 hours) semiconductor device samples, according to the sample surface maximum temperature of 265 C, and maintained at 260 ° C for more than 1 〇 to 20 seconds, so that the sample through the set temperature IR reflow Furnace, then placed in After cooling in the middle of the temperature, the treatment was repeated twice, and the crack in the sample was observed by a visual observation and an ultrasonic microscope. If no crack occurred, it was indicated by "〇", and if a crack occurred, it was represented by "X". The temperature cycle is to place the sample in the _55 (&gt;c environment for 30 minutes, and then in the 125 art environment for 3 minutes, this step is a cycle, after repeating 1000 cycles, the peeling is observed by ultrasonic microscope. Or cracking and other damage phenomena. If it is not produced, it will be indicated by "〇", and if it is produced, it will be represented by "x". The moisture resistance evaluation was carried out in an environment of temperature 12 rc, humidity 100%, 2·03 χ l〇5pa (high pressure cooking test, pCT treatment), and the peeling phenomenon was observed after 72 hours of treatment. No peelers found ii

I set I to use "〇" to indicate that there is a divestiture

X is not (12) using a differential scanning calorimeter (DSC) using a thermoplastic resin, according to the heating rate of 1 & > c / min. Piece 'to obtain the Tg 使用 / paper scale using thermoplastic resin Applicable to China National Standard ((:, NS) A4 Specification (10) 297 297 liters) 114 313968 1287835 A7 _______ _ B7 V. Description of Invention (115) (13) Use of the weight average molecular weight of thermoplastic resin (please read the note on the back first)再? (Refill this page) Measured by gel permeation chromatography and converted using standard polystyrene calibration lines. (14) The rate of change in the heat dissipation amount of the DSC in the bonding sheet, the DSC heat dissipation amount of the adhesive layer when irradiated with radiation is set to A, and the rate of change when the amount of heat radiation before radiation irradiation is set to B (reaction rate) ), using the formula: (B_A) / B calculated. In addition, the DSC measurement conditions are as follows. Heating rate: 10 ° c / min, measuring temperature: 20 ° c to 300 ° c (15) 90 ° peel strength in the bonding sheet attached to the thickness of 150 / zm chopped wafer obtained by the joint piece On the wafer, the bonding sheet was exposed from the substrate side according to the exposure amount of 500 mJ/cm 2 , and the bonding strength of the adhesive layer/substrate interface before and after the exposure was measured according to the 90° peel strength, and the bonding strength was performed according to the 90° peel strength. Measurement (stretching speed: 50 m/min). The Ministry of Economic Affairs, the Intellectual Property Office, and the Employees' Cooperatives Co., Ltd. printed this application in accordance with the Japanese patent application before the applicant of the case, namely, the special request 2001-256285 (application date August 27, 2001), special wish 2001-2 5 62 86 (application date August 27, 2001), special wish 2001-262662 (application date August 31, 2001), special wish 2001-269013 (application date September 5, 2001), special May 2002-35488 (applicable on February 13, 2002), special wish 2002-37032 (application on February 14, 2002), and special request 2002-7 65 77 (application date March 19, 2002) ), special wish 2002-83 777 (application 3 March 25, 2002), special wish 2002-83818 (application date March 25, 2002), special wish 2002-83844 ΐ ^this paper scale applies to China Standard (CNS) A4 size (210 X 297 mm) 115 313968

Order

1287835 A7

Claims (1)

1287835 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed fs Patent Application No. 91119350 (May 24, 1996) 8. The scope of the patent application The bonding force between the adhesive layer and the substrate layer is a bonding sheet controlled by irradiation of radiation; wherein the knee adhesive layer is a bonding sheet containing the following components: (a) a thermoplastic resin; b) a thermally polymerizable component; and (0) a compound which generates a base by radiation irradiation. 2. The bonding sheet according to the first aspect of the invention, wherein the (c) compound which generates a base by radiation irradiation is irradiated with radiation. Further, a base having an alkali strength pKa value of 7 or more in the aqueous solution is produced. 3. The bonding sheet according to the first or second aspect of the patent application, wherein the (c) compound which generates a base by radiation irradiation utilizes a wavelength of 1 50. A base is produced by light of 75 〇 nm. 4. The joint sheet of claim 1, wherein the (c) compound which generates a base by radiation irradiation is an α-amino compound. Scope A bonding sheet of the item 1, wherein the (c) compound which generates a base by radiation irradiation is an amine quinone imine compound. 6. The bonding sheet according to claim 1, wherein the (c) is irradiated with radiation. The base-generating compound is an imidazole gun salt compound represented by the general formula (1) or (2); the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Π7 (Revised) 313968 I i (Please read the notes on the back and fill out this page) * . ^ οα 8 2 , ΐτ Page Replacement 0g888 ABCD Patent Application No. 91119350 (May 24, 1996) VI. Patent application range 3 Ο Riil丄Ten Ar,—C—C——Μ ' (1) R2 FV -M Rt Ο O Rn .I II il I ^ N-C-C·-Af2-C-C-N w R2 R*2 X (wherein R'R^R^R4 are each independently hydrogen, 1 to 8 carbon atoms, 1 to 8 alkoxy groups, 1 to 8 alkylene groups, carbon number 4 to 8 cycloalkyl, 4 to 8 cycloalkenyl, 1 to 6 phenoxyalkyl, 1 to 6 phenylalkyl, 1 to 6 cyanocarbon, 1 to 6 carbon a benzyl group, an electron supply group, and/or an electron attracting group substituted with a phenyl group, a phenyl group, an electron supply group, and/or an electron attracting group substituted with a phenyl group, a benzyl group, an electron supply group, and/or an electron attracting group. Substituted benzyl, nitro, cyano, thiol, thiomethy.l, fluorine, desert, gas, broken, etc.; An group of aromatic groups represented by the following formulas (I) to (XIV) (Please read the notes on the back and fill out this page.) Ministry of Economic Affairs, Intellectual Property Office, Staff and Consumer Cooperatives Printed on this paper scale Applicable to China National Standard (CNS) A4 Specification (210 X 297 mm) 118 (Revised) 313968 A8 B8 C8 D8 Patent Application No. 91119350 (May 24, 1996) U)I3 (IX) VXM; -I * I 1 (please read the notes on the back and fill out this page). · Printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative (in the formula, R5 to r28 are independent, carbon number 1 To 8 alkyl, carbon number: 1 to 8 alkoxy group, carbon number 1 to 8 alkylthio group, carbon number 1 to 8 alkylene group, carbon number 4 to 8 cycloalkyl group, carbon number 4 to 8 cycloolefin Base, amino group, carbon number 1 to 6 arylamino group, carbon number 1 to 3 dialkylamino group, morphinyl group, Wei group, hydroxyl group, carbon number 1 to 6 hydroxyalkyl group, fluorine, chlorine, bromine, etc. Halogen, carbon number 1 to 6 ester group, carbon number 1 to 6 Wei group, thiol, cyano group, trimethyl group, cyano group, nitro group, phenyl group, electron supply group and/or electron attracting group substituted a benzyl group substituted with a phenyl group, an electron supply group, and/or an electron attracting group; wherein, butyl, 11, fluorene, and 2 are independently carbon, nitrogen, oxygen, or sulfur atoms; The scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm 119 (Revised) 313968 128783⁄45. 24 A8 B8 C8 D8 Patent Application No. 91119350 (May 24, 1996, Patent Application Range, in addition, Ars Under the formula χν) to (XXIII shown aromatic group); (XV: &lt;25 ^30 UV ί|) A (X7HD B (XX) ΰ. C=0 rS02 _) (XXEI) Printing and Marketing Department of the Ministry of Finance and Economics, K Consumer Co., Ltd. (wherein R29 to R36 are independently hydrogen, carbon number 1 to 8 alkyl, carbon number 1 to 8 alkoxy, carbon number 1 to 8 Alkylthio group, carbon number 1 to 8 alkylene group, carbon number 4 to 8 cycloalkyl group, carbon number 4 to 8 cycloalkenyl group, amino group, carbon number 1 to 6 alkyl group, carbon number 1 to 3 Alkylamino, morpholinyl, thiol, hydroxyl, carbon 1 to 6 hydroxyalkyl, halogen such as fluorine, chlorine, bromine, carbon number 1 to 6 ester group, carbon number 丨 to 6 carbonyl group, aldehyde group, cyanide a phenyl group, an electron supply group, and/or an electron attracting group substituted by a methyl group, a cyano group, a nitro group, a phenyl group, an electron supply group, and/or an electron attracting group; wherein, A , B, D, E are independent carbon, nitrogen, oxygen, sulfur (please read the back of the note before you fill out this page) 120 (amendment) 313968 1287835 Replacement page A8 B8 C8 D8 Patent Application No. 91119350 (May 24, 1996, VI. Patent application scope, which may also be associated with carbon, nitrogen, carbon number 1 to 6 alkyl, oxygen, sulfur bonds结·································································· , only 38 R37--B--R39 (XX Han) ^40 (wherein, R37 to R40 are independently hydrogen, fluorine, carbon number 1 to 6 alkyl, stupid, fluorine substituted by at least one fluorine Phenyl, imidazolyl)). 7. The joint sheet of claim i, wherein the adhesive layer comprises (d) a singlet or triplet sensitizer. 8. The bonding sheet according to item 7 of the patent application, wherein the (1) singlet or triplet sensitizer is: a naphthalene derivative, an anthracene derivative, a carbazole derivative, a thioxanthone derivative, two In the group consisting of benzophenone derivatives, benzoin derivatives, etc., at least one of them is selected. Printed by the Ministry of Economic Affairs, Intellectual Property Office, and the Consumer Cooperatives. 9. For the joint piece of the patent application, item 1, a) The thermoplastic resin is a high molecular weight component containing a functional monomer and having a weight average molecular weight of 100,000 or more. I. The bonding sheet according to claim 9, wherein the functional monomer and the weight average molecular weight More than 100,000 high molecular weight components are containing a glycidyl group-containing repeating unit 〇·5 to 6% by weight of a glycidyl- or thiol-containing (mercapto)acrylic acid copolymer. II · Patent Application No. 9 The bonding piece of the item, wherein the adhesive layer contains 12] (revision) 313968 paper scale sense + country iii ^ Ns) A4 specification TiFx 29_fiiT 9 4 \ A8 B8 C8 D8 to (four) n , Factory repair (b is replacing page VI, the patent application range is 10 to 400 parts by weight of the high-component T component containing the weight average molecular weight of the functional monomer of 10,000 or more, and (b) thermal polymerization property Ingredient 1〇〇 (please read the precautions on the back side and fill out this page) Parts by weight; and (c) Radiation polymerizable compound 〇·〇1 to 2 parts by weight of the compound which generates alkali by radiation. The bonding sheet of the invention of claim 4, wherein the (4) thermoplastic resin is a polyimide film. The bonding sheet according to claim 12, wherein the adhesive layer contains the poly 100 parts by weight of the imine resin; (b) 1 to 200 parts by weight of the thermally polymerizable component; and 0.01 to 200 parts by weight of the compound which generates a base by radiation irradiation. The 聚合) thermal polymerizable component is an epoxy resin and an epoxy resin hardener. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, Employees' Consumer Cooperatives. 15. The adhesive sheet of claim 1, wherein the adhesive layer has: (A1) the adhesive layer and the substrate layer before radiation exposure The bonding strength of the interface is 200 mN/cm or more, or (A2) the adhesive layer before the radiation irradiation, and the adhesion strength at 25 ° C measured by the 5.1 mm p probe is 0.5 N or more; and at least has the following characteristics (6) The flow amount at 1 60 ° C before radiation exposure is 1 〇〇 to 〖 β m ; (B2) The melt viscosity at 160 ° C before radiation irradiation is 5 〇 to lOOOOOPa" 1 6 · The bonding sheet according to item 1 of the patent application, wherein the adhesive layer has: (C1) the interface of the adhesive layer/substrate layer before and after the radiation irradiation, the paper size is applicable to the Chinese country. Standard (CNS) A4 specification (210 X 297 mm) 122 (Revised) 313968 128 Surface: J Zhengdu page change B8 C8 D8 Patent No. 91119350 (May 24, 1996) 痤齐sriorisrs.^员1 - Inquiry fee ^咋^^ system 6. The patent application range is inferior in intensity (before radiation exposure) Bonding strength - bonding strength after radiation exposure), above 100 mN/cm; or (C2) adhesion of the adhesive layer at 25 ° C before and after radiation exposure (adhesive strength at 25 ° C before radiation exposure - after radiation exposure) Adhesive strength at 25 ° C, above the 抹.lN/5.1mm $ trowel' and at least one of the following characteristics: (D1) tan(?) of i2〇cC before radiation exposure? Above 〇", after radiation exposure, 180. Tan 5 of yttrium is above 0·1; (D2) Storage elastic modulus of i2 〇 °C before radiation irradiation is less than 1 〇 MPa, storage at 18 ° C after radiation irradiation The elastic modulus is less than 10 MPa. 1 7. The bonding sheet according to the ninth aspect of the invention, wherein the adhesive layer is in an unhardened or semi-hardened state, and the storage modulus at 50 ° C is above 0 MPa. After 200 MPa or less, after a certain amount of radiation is irradiated, the elastic modulus of the 5 〇C is twice or more than that before the irradiation, and after the irradiation of a certain amount of radiation, the adhesive layer has at least the following (E) At least one of the characteristics shown by ), (?), and (G); (E) The flow amount of 160 C is 1 〇〇# m or more and 1 〇〇〇〇# m or less; (F) The molten viscosity of 160 C is above 50 Pa.s, and below l〇6 pa.s; and (G) The storage modulus at 180 ° C is below i 〇〇 MPa. 1 8. A bonding sheet having a kick layer and a substrate layer; and a bonding force between the adhesive layer and the substrate layer, It is carried out by irradiation with radiation - (1) (Please read the notes on the back and fill out this page). 123 (Revised) 313968 128783^ Daily Repair (\) is replacing page A8 B8 C8 D8 Patent Application No. 91119350 (May 24, 1996, VI. Patent-controlled joint piece; the adhesive layer And (A1) a bonding strength of the interface between the adhesive layer and the substrate layer before radiation irradiation is 2〇〇rnN/cin or more; and the bonding sheet having at least one of the following characteristics (B 1 ) The flow rate at 160 °C before radiation exposure is; I 〇〇 to 1 〇〇〇〇β m ; (B2) The melt viscosity at 160 °C before radiation exposure is 50 to 100000Pa*s ° 19 The bonding sheet according to claim 18, wherein the flow amount ratio (fluid amount after irradiation/flow amount before irradiation) before and after radiation irradiation is 0.1 or more in the bonding sheet. 20·If the application is in the 18th item Or a bonding sheet according to item 19, wherein a bonding strength ratio (joint strength after irradiation/joint strength before irradiation) before and after radiation irradiation of the interface between the adhesive layer and the substrate layer in the bonding sheet is 0.5 or less. ·If applying for patents, the 18th or 19th In the bonding sheet, the bonding strength before and after the radiation irradiation of the interface between the adhesive layer and the substrate layer in the bonding sheet (joint strength before irradiation - bonding strength after irradiation) is 100 mN/cm or more. The bonding sheet of the 18th aspect of the patent, wherein the bonding viscosity of the bonding sheet before and after the radiation irradiation (melting viscosity after irradiation/irradiation such as viscosity) is below 10 〇. 23 · The bonding piece is provided with adhesive The agent layer and the substrate layer; and the bonding force between the adhesive layer and the substrate layer is performed by irradiation of radiation. Please read the back of the page and fill in the page. _ • Line Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumer Cooperatives, Printed Paper Scale Applicable to China National Standard (CNS) A4 Specification (2].〇297 mm) 124 (Revised) 313968 Or I2878B &gt; · 2 4 A8 B8 C8 D8 No. 91119350 Patent application (May 24, 1996, the application of the patent range controlled bonding sheet; wherein the adhesive layer has: (A2) the adhesive layer before radiation irradiation, using 5.1111111 (measured by a probe) of 25. (: The bonding strength is above 〇^, and at least one of the following characteristics is present; (B1) The flow of i6〇〇c before radiation irradiation is ι〇〇 to (8) β economy Ministry of Intellectual Property Office Staff Cooperatives Printing (B2) Before the radiation exposure lOOOOOPa.s 〇24·If the bonding sheet of the 23rd patent application scope, in the bonding sheet, before and after the radiation irradiation of the adhesive layer, The difference in adhesion strength at 25 ° C measured by the probe (adhesive strength before irradiation - adhesion strength after irradiation) was 0.1 N or more. The bonding sheet of claim 23, wherein the amount of flow before and after radiation irradiation (the amount of flow after irradiation/the amount of flow before irradiation) is 0.1 or more. 26. The bonding sheet according to claim 23 or claim 24, wherein the fusion sheet has a melt viscosity ratio (melting viscosity after irradiation/melting viscosity before irradiation) of less than 100 Å in the bonding sheet. The bonding sheet of claim 18 or 23, wherein the radiation is light having a wavelength of from 150 nm to 750 nm. 28. The bonding sheet according to claim 18 or 23, wherein the bonding strength after the radiation irradiation is 100 mN/cm or less. 29·—the bonding piece, which has an adhesive layer and a substrate layer; and the adhesive layer has a melt viscosity of 160 ° C to the paper scale applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 PCT) (Revised) 313968 T Pack·„ (Please read the note on the back and fill out this page) 2 A8 B8 C8 D8 [28 Bu 8th No. 91919350 Patent Application (May 24, 1996) VI. The bonding force between the patent application scope and the substrate layer is a bonding sheet that is controlled by irradiation of radiation; wherein (please read the back of the back sheet and fill in this page). The adhesive layer has: (C 1 The difference in bonding strength between the adhesive layer/substrate layer interface before and after radiation irradiation (joint strength before radiation irradiation - bonding strength after radiation exposure) is 1 〇〇 mN/cm or more; and at least The bonding sheet of at least one of the following characteristics; (D1) tan5 at 120 ° C before radiation irradiation is 〇·1 or more, and tan 5 at 180 ° C after radiation irradiation is 0.1 or more; (D2) 120 before radiation irradiation The storage elastic modulus of °C is below i〇MPa, after radiation exposure 18 The storage elastic modulus at 0 ° C is below i00 MPa. 3. The bonding sheet according to claim 29, wherein the bonding strength ratio of the interface between the adhesive layer and the substrate layer before and after the irradiation of the bonding sheet (radiation) The bonding strength after the irradiation/the bonding strength before the radiation irradiation is below 0.5. The Ministry of Economic Affairs, the Intellectual Property Office, the employee consumption cooperative, printed 31. The bonding sheet of claim 29, wherein the bonding sheet, the glue The bonding strength before the irradiation of the interface between the adhesive layer and the substrate layer is 200 mN/cm or more; and the bonding strength after the radiation irradiation is 100 nN/cm or less. 32. The bonding piece is provided with an adhesive. a layer and a substrate layer; and a bonding force between the adhesive layer and the substrate layer is a bonding sheet controlled by irradiation of radiation; wherein the adhesive layer has (C2) radiation irradiation Adhesive strength at 25 °C before and after the adhesive layer (adhesive strength at 25 °C before radiation exposure) The paper scale is applicable to China National Standard (CNS) A4 specification (21〇X 297 mm) 126 (Revised) 313968 First Patent Application No. 9Π19350 (May 24, 1996) 6. Adhesive strength of 251 after radiation exposure in the patent application area, and the bonding piece of at least one of the following characteristics is provided on the 〇·1Ν/5·1ιηπ^ probe 1287 release 5 heart replacement page. Human (D1) before the radiation exposure, the tan d of 1 20 °C is above 〇·1, and the tan 100 of the radio frequency after the irradiation of 180 °C is 0.1 or more; (D2) 12 before the radiation irradiation (the storage elastic modulus of TC is 1) 〇Mpa or less, after storage of radiation 18 (the storage elastic modulus of TC is 1 MPa or less. 33. The bonding sheet of claim 32, wherein the bonding sheet has an adhesive layer and a base before and after radiation irradiation. The bonding strength ratio of the material layer interface (joint strength after radiation irradiation/joint strength before radiation irradiation) is 0.5 or less. 34. The bonding sheet of claim 33, wherein the bonding, the film, the glue The bonding strength before the irradiation of the interface between the adhesive layer and the substrate layer is 200 mN/cm or more; and the bonding strength after the radiation irradiation is 100 mN/cm or less. 3 5·- kinds of bonding sheets are provided with adhesive Agent layer and substrate layer; and the adhesive The bonding force between the agent layer and the substrate layer is a bonding sheet controlled by irradiation of radiation; wherein the 5 Å adhesive layer is in an unhardened or semi-hardened state, and the storage elastic modulus of 5 is at 0. After IMPa or more and 200 MPa or less, after a certain amount of radiation is irradiated, the storage modulus at 50 ° C is twice or more than that before irradiation, and after the radiation in one ray is known, the adhesive layer has at least the following ( At least one of the characteristics shown in E), (F), and (G); This paper scale applies to the Chinese National Standard (CNS) A4 specification (21〇X 297 mm) 127 (Revised) 313968 Please read the back Economic Zou Intellectual Property Bureau employee consumption cooperative printed I287 «3S. 曰Revised replacement page No. 91919350 patent application (May 24, 1996) Above, 10000 // m to apply for patent range (E) 160 °C flow is ι〇〇 / /; installed --- (please read the back note before filling this page) (F) 160 ° C The solubility of the melt is above 50 Pa.s and below 1 〇6 pa.s; and the storage modulus of (G) 180 C is below i〇〇]VIpa. 36. The bonding sheet according to claim 35, wherein the bonding amount of the bonding sheet at 160 ° C in the unhardened salted and semi-hardened state is the flow amount of the adhesive layer after the radiation is irradiated to the bonding sheet. B, in line with the relationship b/A -1/10. 37. The joint sheet of claim 35 or 36, wherein the storage modulus of the adhesive layer at 50 ° C is applied to the uncured or semi-hardened joint sheet after a certain amount of radiation irradiation. 5Mpa or more. 3 8. As in the bonding sheet of claim 35, the adhesive layer meets the following conditions: 1) 10 in the unhardened or semi-hardened state (the storage elastic modulus of rc is 0.001 MPa or more and 2 MPa or less; 2) The storage elastic modulus at 50 °C is printed at 7.5 MPa or more and 50 MPa or less at the Intellectual Property Office of the Ministry of Economic Affairs. 3) After radiation exposure, the storage elastic modulus of 5 〇t is above MMPa and below 1 MPa; After that, the storage modulus at 5 〇 ° C is not less than i 〇〇 MPa and not more than 5000 MPa. 39. The bonding sheet of claim 35, wherein the adhesive layer of the bonding sheet after radiation irradiation, the laminated hardened material of the 5 mm square semiconductor element and the supporting member, at 25 ° C The bonding strength was 3.0 N/wafer or more. 40. For the bonding sheet of claim 35, the paper scale after heat hardening is applicable to China National Standard (CNS) A4 specification (21G 297 297 cc) 128 (Revised) 313968 No. 91119350 Patent Shen Jinghong ( On May 24, 1996, the Intellectual Property Department of the Ministry of Finance and the Ministry of Consumers, the Consumer Cooperatives, the Printing Restriction Repair (¥) is replacing the page c^________ VI. The patented range of bonding pieces is measured by the dynamic viscoelasticity measuring device, the adhesive layer The storage modulus is 25. (: 10 MPa or more, 2000 MPa or less, and 260 ° C is 3 MPa or more and 50 MPa or less. 41. The bonding sheet of claim 35, wherein the radiation has a wavelength of 150 nm to 750 nm. 42. The bonding sheet according to claim 35, wherein the bonding strength after the radiation irradiation is below 100 niN/cm. 43. A method of manufacturing a semiconductor device, comprising: a bonding sheet having an adhesive layer and a substrate layer according to any one of 42, which is attached to the semiconductor wafer in a manner of sandwiching the adhesive layer; and the semiconductor wafer is cut Processing, forming a semiconductor element with an adhesive layer; after two =, irradiating the bonding sheet with radiation, hardening the adhesive layer, and then peeling off the substrate film layer; and The step of bonding the + conductor S member with the glue dot ^ and the semiconductor element supporting support member or the semiconductor member through the bonding sheet. _ 4 (---------------------- A structure in which a bonding sheet 'semiconductor element and a semiconductor element supporting supporting member' or a semiconductor element are bonded to each other according to any one of the first to the third aspects of the invention. Specification (21G 297 297 public* 129 (amendment) 313968 (Please read the notes on the back and fill out this page)