TW448709B - Low-thermal expansion circuit board and multilayer circuit board - Google Patents
Low-thermal expansion circuit board and multilayer circuit board Download PDFInfo
- Publication number
- TW448709B TW448709B TW088109501A TW88109501A TW448709B TW 448709 B TW448709 B TW 448709B TW 088109501 A TW088109501 A TW 088109501A TW 88109501 A TW88109501 A TW 88109501A TW 448709 B TW448709 B TW 448709B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- circuit board
- thermal expansion
- double
- copper
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 106
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 32
- 239000004020 conductor Substances 0.000 claims abstract description 27
- 229910000679 solder Inorganic materials 0.000 claims abstract description 27
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 239000012790 adhesive layer Substances 0.000 claims abstract description 15
- 229920000620 organic polymer Polymers 0.000 claims abstract description 15
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical group [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229920001721 polyimide Polymers 0.000 claims description 31
- 239000009719 polyimide resin Substances 0.000 claims description 12
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- -1 m-ditoluidine Chemical compound 0.000 claims description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 29
- 230000001070 adhesive effect Effects 0.000 description 29
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000004642 Polyimide Substances 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 239000011888 foil Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000012792 core layer Substances 0.000 description 9
- 238000009413 insulation Methods 0.000 description 8
- 229910000831 Steel Inorganic materials 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 239000002966 varnish Substances 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000004840 adhesive resin Substances 0.000 description 2
- 229920006223 adhesive resin Polymers 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- KXCVRJMSLWDHNJ-UHFFFAOYSA-N 1-(9H-fluoren-1-yl)pyrrolidin-2-one Chemical compound C1(=CC=CC=2C3=CC=CC=C3CC12)N1C(CCC1)=O KXCVRJMSLWDHNJ-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000979 O alloy Inorganic materials 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HJTGLGFFDBDRPU-UHFFFAOYSA-N [Fe].[Br] Chemical compound [Fe].[Br] HJTGLGFFDBDRPU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000011487 hemp Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 238000004080 punching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer or layered thin film adhesion layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09536—Buried plated through-holes, i.e. plated through-holes formed in a core before lamination
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
- H05K3/462—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination characterized by laminating only or mainly similar double-sided circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4623—Manufacturing multilayer circuits by laminating two or more circuit boards the circuit boards having internal via connections between two or more circuit layers before lamination, e.g. double-sided circuit boards
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Wire Bonding (AREA)
Abstract
Description
448709 五、發明說明(1) 發明之領域 本發明係關於一種低熱膨脹電路板,及一種供裸晶片安 裝之低熱膨脹多層電路板,其具有小熱膨脹係數,並因此為 高度可靠。 ” 發明之背景 隨電子設備具有較小尺寸及較高性能之最近趨勢,人們 要求構成電子設備之半導體裝置及供安裝裝置之印刷電路 板具有縮小之尺寸及厚度,較高之性能及較高之可靠性。 為滿足此等要求,接腳插入框架被表面框架所代替,並且在 最近幾年,一種稱為裸晶片樞架之表面框架技術已在研究 中,其中非封裝(裸)半導體元件予以直接安裝在印刷電路 然而,在裸晶片安裝,因為具有熱膨脹係數3至^^㈣/。〇 ,矽晶片予以直接安裝在具有熱膨脹係數1〇至2〇卯“乞之 :刷電路板,由於熱膨脹上之差異產生應力,而損害可靠 '丄應力在例如倒裝晶片黏結導致接合處斷裂,其將會導 致有缺點之電連接。 入ί丨了枯減輕熱應力’人們曾實施以一種名為底層填料之黏 二真滿在安裝之半導體元件與印刷電路板間之間隙,藉 力刀人們加曾至拿接義合處右之前應庙力:為了由印刷電路板本身吸收應 路及收層之多層印刷電路板在電 紐-A + 297560號)。然而,藉此步漸變(凊 “足。獲得進一步改進之可靠性,以減低印刷電:板448709 V. Description of the invention (1) Field of the invention The present invention relates to a low thermal expansion circuit board and a low thermal expansion multilayer circuit board for mounting bare chips, which has a small thermal expansion coefficient and is therefore highly reliable. Background of the Invention With the recent trend of smaller size and higher performance of electronic equipment, semiconductor devices constituting electronic equipment and printed circuit boards for mounting devices are required to have reduced size and thickness, higher performance and higher Reliability. To meet these requirements, the pin insertion frame is replaced by a surface frame, and in recent years, a surface frame technology called a bare wafer pivot has been studied, in which non-packaged (bare) semiconductor components are Directly mounted on a printed circuit However, since it is mounted on a bare chip because it has a thermal expansion coefficient of 3 to ^^ ㈣ / .〇, a silicon wafer is directly mounted on a chip having a thermal expansion coefficient of 10 to 20 卯 "Begging: brush the circuit board due to thermal expansion Differences in stress generate stress, which can damage the reliability. For example, stresses such as flip-chip bonding can cause joints to break, which can lead to defective electrical connections. I have reduced the thermal stress, and people have implemented a kind of adhesive called underfill that fills the gap between the mounted semiconductor component and the printed circuit board. With the help of a knife, people can add it to the right before the right-hand side. Ying Miaoli: In order to absorb the printed circuit board itself and the multi-layer printed circuit board of the winding layer (No. -A + 297560). However, taking this step gradually (凊 "sufficient." To obtain further improved reliability to reduce printed electricity: board
第5頁 448709 五、發明說明(2) 本身之熱膨脹係數,為必不可少。在此一方面Jp_A_61 — 212096號闡示一種多層電路板,包含一有絕緣層及配線導 體交替形成在其上,並立如果希望,有焊料墊片藉光蝕刻形 成在其頂層之Fe〜Ni合金基材,基材,絕緣層及配線導體在 熱下,藉壓力黏結予以結合成為一整體疊片。所揭示之技 術具有下列缺點。在使用銅作為配線導體之情形,難以減 低整個電路板之熱膨脹係數至矽之水準,因為銅之彈性模 ,遠大於使用作為絕緣層之聚醯亞胺樹脂者。配線導體係 藉薄金屬膜形成技術,諸如真空積著及濺射所形成其具有 ,生產力,並招致增加之成本。藉積著後隨光蝕刻形成焊 料墊片,需要複雜之步驟。 ,另一方面,增加予以安裝之半導體之1/〇接腳計數,曾 ^加層壓許乡t路板之必純。聚方法,&含在基材 :或兩面’交替集聚光敏樹脂之絕緣層及藉鍵敷或積著 所:成之導體層’可產生多層電路板。集聚方法具有缺點 夕因為生產方法複雜,並包括报多步驟,生產量低,並需要报 JP~A-8-288649號建議一箱祉# β〜 h人社 種供產生多層電路板之方法, 包含藉一分配器等,在單面鈿4廉a Ψ ώ ^ * n 办钔包覆%氧/玻璃疊片之銅側面 t成導電膏之凸起部,將—力 ^ , ^ a L ^ 黏s劑片及銅箔對其壓緊,並重 複此等步驟。此技術在電遠垃 入/叫& ^ < 迷接之可靠性,連接電阻率等不 7人滿思,並且很幾乎不應用批☆ 虹趣* 广时 碟用於細微電路。而且,其為一種 耗費時間方法,壓緊之步驟必炫工 郑必須予以重複與層數一樣多Page 5 448709 V. Description of the invention (2) The thermal expansion coefficient itself is indispensable. On the one hand, Jp_A_61 — 212096 illustrates a multilayer circuit board including an insulating layer and a wiring conductor alternately formed thereon, and if desired, a solder pad is formed on the top layer of the Fe ~ Ni alloy by light etching. Materials, substrates, insulation layers and wiring conductors are combined under pressure to form a monolithic laminate under heat. The disclosed technique has the following disadvantages. In the case of using copper as a wiring conductor, it is difficult to reduce the thermal expansion coefficient of the entire circuit board to the level of silicon, because the elastic modulus of copper is much larger than those using polyimide resin as an insulating layer. Wiring systems are formed by thin metal film formation technologies such as vacuum deposition and sputtering, which have increased productivity and incurred increased costs. The formation of a solder pad by photoetching followed by photolithography requires complicated steps. On the other hand, increasing the 1/0 pin count of the semiconductors to be installed has increased the purity of the road boards in Xuxiang. Polymerization method, & Contained on the substrate: Or both sides' alternately gather the insulating layer of the photosensitive resin and deposit or deposit by bonding: a conductive layer formed to produce a multilayer circuit board. The agglomeration method has disadvantages because the production method is complicated and includes multiple steps. The production volume is low, and it is necessary to report to JP ~ A-8-288649. Suggest a box of welfare # β ~ h. Including borrowing a distributor, etc., 廉 4 廉 a ώ ώ * ^ * n to cover the copper side of the% oxygen / glass laminate t into the convex portion of the conductive paste, force ^, ^ a L ^ The adhesive sheet and the copper foil are pressed against it, and these steps are repeated. This technology is not reliable in connection and resistivity, and the connection resistivity is far from 7 people, and it is hardly applied. ☆ Hongqu * wide-time disk is used for fine circuits. Moreover, it is a time-consuming method, and the compaction step must be performed. Zheng must repeat it as many times as the number of layers.
448 70 9 五、發明說明(3) 本發明之發明人等發現,與習知技術關聯之 丄 3^問者黃 及聚酿亞胺樹脂,以及作為配線材料之鋼之熱膨 ^月旨 於半導體元件者所導致。常使用作為配線導二極 曰七丄此咖π „一 ^ ^ . . .. .. i 之銅,不僅 主要由板,更特別是構成絕緣層之有機材料,諸如产& ’ !聚酼 K ffifc 招J· Bfe IV H Ah ^ TS.-, Li, J.J. j!,-l A fli 樹 端大 具有大熱膨脹係數,而且具有大彈性模數,而增加埶勝 應力。雖然,銅為一種優良導電材料,並且…%脹之 所必不可少 I馮配線材料 發明之概沭 本發明之目的為提供一種低熱膨脹電 脹多層電路板’其具有小熱膨脹係數,及優 ^ ^低熱膨 以上目的係藉一低熱膨脹電路板,包含〜一。罪丨生。 物作成,在其上有配線導體供裸晶片安 :^機聚合 其中配線導體包含一鐵_鎳~基合金層在甘所達成, 層。 ,在至少其一側有銅 該目 板整體 在本 置在所 通孔在 且通孔 導體藉 由於 層所構 在至少 的也係藉一多層 処低熟膨脹電路 層壓所達成。 發明之實施’多層電路板有許多 有相鄰電路板間之黏合劑層整體面電2與-插 連接相鄰上及下雙面雷路描之f層壓’黏合劑層有 内含一以焊料作成之導體,相鄰 之位置,並 其予以電連接。 ^面電路板之配線 廣泛之研究,發明人等使用一種 成之複合配㈣料,有低㈣一 H鎳-基合金 合金層之-側,籍以發展成功— S’广告銅層提供 種咼度可靠低熱膨448 70 9 V. Description of the invention (3) The inventors of the present invention have discovered that the 3rd inquirer yellow and polyimide resin are related to the conventional technology, and the thermal expansion of steel as a wiring material is aimed at semiconductor components. Cause. It is often used as a wiring diode, which is called 丄 丄 ^ ^ ^ ^..... I. Copper is not only mainly composed of plates, but also especially organic materials that constitute the insulation layer, such as products & '! 酼K ffifc J Bfe IV H Ah ^ TS.-, Li, JJ j !, -l A fli The tree end has a large thermal expansion coefficient and a large elastic modulus, which increases the stress of win. Although copper is a kind of Excellent conductive materials, and ...% essential for expansion I Feng wiring material invention Summary The purpose of the present invention is to provide a low thermal expansion electric expansion multilayer circuit board which has a small thermal expansion coefficient and excellent ^^ low thermal expansion above the purpose It is based on a low thermal expansion circuit board, which contains ~ 1. Sin. The object is made, and there are wiring conductors on it for bare chip installation: machine polymerization where the wiring conductor contains an iron-nickel-based alloy layer is achieved in Gan, There is copper on at least one side of the mesh. The whole of the mesh is originally placed in the through hole and the through-hole conductor is achieved by laminating a layer with a low-mature expansion circuit at least because of the layer structure. Implementation of the invention 'multilayer circuit boards have many adjacent The entire surface of the adhesive layer between the boards is connected to the f-laminated 'adhesive layer' of adjacent upper and lower double-sided lightning traces. The adhesive layer contains a conductor made of solder, adjacent positions, and The electrical wiring is extensively studied. ^ The extensive research on the wiring of the surface circuit board, the inventors, etc. used a composite compound material, which has a low side of a H-nickel-based alloy alloy layer, to develop successfully-S 'advertising copper Layer provides reliable low thermal expansion
448709448709
五、發明說明(4) 脹電路板。為電路板之大熱膨脹之主要原因 适己 以直接形成在一有低熱膨服係數之鐵-錄—基合金居, 低對配線導體之熱膨脹之應力。因此,可抑制電起 $ 之熱膨脹,藉以在裸晶片安裝後導致黏結之改 ' 為電路板之大熱膨脹之另一原因之絕緣層之妖1 陡 數,可藉使用一種自苯均四酸雙酐(pyromeU L服係 dianhydride,在下文略作ρημ),nt-聯 p 笨胺 kacid (m-t〇lidine,在下文略作m_TLD),及有小熱膨 _ 氨基聯苯醚(diaminodiphenyl ether,在下文略^之一 之聚醯亞胺樹脂予以減低。因此可更增強電π斤 。在以一種有機聚合物作成之絕緣層含有 11 -鎳-基合金戈一 麻二 以一種鐵 ^ A 禋网无材枓作成之心層情形可、 低絕緣層之熱膨脹係數。 A 了進一步減 =壓本發明之低熱膨脹電路板,提供一 優點之多層電路板。 '有上述諸多 單說明 之Γ備至6各提供剖面圖’示根據本發明之低熱膨脹電路板 為根據本發明之低熱膨脹多層電路板其— 面圖。 "例之 圖8為—三層片之剖面圖。 =為圖8之三層片之剖面圖,有一通孔作成在 。 為圊g之三層片之剖面圖,通孔予以鍍敷銅° 為圖ίο之三層片之剖面圖,有—電路圖案形成在5. Description of the invention (4) Expansion circuit board. It is the main reason for the large thermal expansion of the circuit board. It is directly formed in an iron-record-based alloy with a low thermal expansion coefficient and low stress on the thermal expansion of the wiring conductor. Therefore, the thermal expansion of electricity can be suppressed, so that the adhesion after the bare chip is mounted is changed. It is another reason for the large thermal expansion of the circuit board. The abrupt number of the insulation layer can be improved by using a pyromellitic acid double Anhydride (pyromeU L is a dianhydride, hereinafter referred to as ρημ), nt-bi-p-ammidine kacid (mt〇lidine, hereinafter referred to as m_TLD), and a small thermal expansion _ diaminodiphenyl ether (hereinafter One of the polyimide resins is reduced. Therefore, the electric power can be further enhanced. The insulating layer made of an organic polymer contains 11-nickel-based alloy Ge-hemp and iron. A ^ 网 无The core layer made of material can be used, and the thermal expansion coefficient of the low insulation layer can be further reduced. The low thermal expansion circuit board of the present invention is further reduced to provide an advantage of the multi-layer circuit board. Sectional view 'shows that the low thermal expansion circuit board according to the present invention is a low thermal expansion multilayer circuit board according to the present invention, which is a top view. &Quot; Example of FIG. 8 is a cross-sectional view of a three-layer sheet. = Is a three-layer sheet of FIG. 8 Section view, there is a pass In creating three-layer sheet is a sectional view of the pigsty g, a copper plated through hole to be ° is a sectional view of a three-layer sheet of FIG ίο with - a circuit pattern is formed
第8頁 48 70 9 五、發明說明(5) 兩面,亦即一雙面電路板。 圖12為圖11之雙面電路板之剖面圖,有—黏合劑片暫時 對其黏附。 圖13為圖12之雙面電路板之剖面圖,有—焊塊形成在黏 合劑片之通孔。 發明之詳細說明 在本發明預計之低熱膨脹電路板,意為一有熱膨脹係數 低於熱膨脹係數10至20ppm/t之電路板。 可使用於本發明之鐵-鎳-基合金,不僅包括一種鐵-鎳二 元合金,只要保持低熱膨脹係數,而且包括含有其他元素, 諸如姑之鐵-錦合金。在fe-Ni二元合金之較佳Ni含量,以 重量計,範圍自·31至5 0 % »超出此範圍,合金便有增加之熱 膨脹係數,會具有減低之黏結可靠性F e _ N i - c 〇合金包括 具有 Ni/Co/Fe 重量比29/16/55,32/8/60 及 36/4/60 者,其 係由 Sumitomo Special Metals Co., Ltd·分別以商名 KV-2,KV-25 及Superinvar 所供銷。 (諸)鐵-鎳-基合金層之總厚度,在電路板之總厚度宜為 10%或更多,並為大於(諸)銅層之總厚度。藉較薄鐵-鎳—基 合金層,電路板將會具有增加之熱膨脹係數及減低之可靠 性。電路板之厚度較佳為200微米或較小/配線導體,以供 達成高密度安裝。 可使用作為絕緣層之有機聚合物,係適當選自在此項技 藝上所熟知者,諸如笨酚樹脂,環氧樹脂,聚酯樹脂,聚孤類 樹脂,聚謎-亞胺樹脂,聚醚曱酮樹脂,及聚醯亞胺樹脂。Page 8 48 70 9 V. Description of the invention (5) Two sides, that is, a double-sided circuit board. Fig. 12 is a cross-sectional view of the double-sided circuit board of Fig. 11, with-an adhesive sheet temporarily adhering to it. Fig. 13 is a cross-sectional view of the double-sided circuit board of Fig. 12, with solder bumps formed in the through holes of the adhesive sheet. Detailed description of the invention The low thermal expansion circuit board expected in the present invention means a circuit board having a thermal expansion coefficient lower than the thermal expansion coefficient by 10 to 20 ppm / t. The iron-nickel-based alloy that can be used in the present invention includes not only an iron-nickel binary alloy as long as the thermal expansion coefficient is kept low, but also contains other elements such as an iron-bromine alloy. The preferred Ni content of the Fe-Ni binary alloy ranges from · 31 to 50% by weight. »Beyond this range, the alloy will have an increased coefficient of thermal expansion and will have reduced bonding reliability F e _ N i -c 〇 alloy includes those with Ni / Co / Fe weight ratios of 29/16/55, 32/8/60, and 36/4/60, which are each under the trade name KV-2 by Sumitomo Special Metals Co., Ltd. , Supplied by KV-25 and Superinvar. The total thickness of the iron-nickel-based alloy layer is preferably 10% or more on the circuit board, and is greater than the total thickness of the copper layer (s). With thinner iron-nickel-based alloy layers, circuit boards will have increased thermal expansion coefficients and reduced reliability. The thickness of the circuit board is preferably 200 micrometers or less / wiring conductor for high-density mounting. An organic polymer that can be used as an insulating layer is appropriately selected from those well-known in the art, such as phenol resin, epoxy resin, polyester resin, polyisocyanate resin, poly-imide resin, polyether. Ketone resin, and polyimide resin.
88109501.ptd 第 9 頁 448709 五、發明說明(6) 如果希望,有機聚合物材料可配合紙,玻璃布,玻璃墊,玻璃 非織造織物,K e v 1 a r纖維,及類似者使用以形成一複合絕 緣層。 以一種自PHDA,m-TLD,及DDE製備之聚醯亞胺樹脂所作成 之絕緣層,因為其小熱膨脹係數而為較佳。雖然以及 DDE對PHD A之克分子比範圍自〇至1〇〇克分子%,可獲得具有 小熱膨脹係數之聚醯亞胺,但熱膨脹係數隨m-TLD之比例之 增加而減少。特別是,在m-TLD之比例為50至100克分子% 時,聚醯亞胺樹脂具有1 0 p p m / °C或更小之熱膨脹係數,並 這適合完成一種具有熱膨脹係數10至20ppm/。(:或更小之電 路板。 可使用作為絕緣層之心層之陶瓷材料,係適當選自具有 低熱膨脹係數者,諸如氧化鋁,富鋁紅柱石,堇青石,碳化 矽,氮化矽,氮化鋁,及氧化锆。 產生根據本發明之低熱膨脹(多層)電路板之方法,將參 照附圖予以例示。 如下製備一有銅層在其一侧面之電路板先質,亦即一單 面銅包覆疊片。在圖1中所示之第一方法,包含藉積著,無 電鍍敷,電鍍等之適當組合,使一有機聚合物層(絕緣層)i 金屬化,以形成一鐵-錄-基合金層2及一銅層3。在圖2及3 中所示之第二方法,包含藉積著,鍍敷,包覆等,在—鐵-鎮一 基合金箔5之兩面形成一銅層6,以預先形成一多層金屬绪7 作為配線導體,及藉例如鑄製,在多層金屬箔7之表面形成 一有機聚合物層1。在圖4中所示之第三方法,包含藉例如88109501.ptd Page 9 448709 V. Description of the invention (6) If desired, the organic polymer material can be used with paper, glass cloth, glass mat, glass nonwoven fabric, Kev 1 ar fiber, and the like to form a composite Insulation. An insulating layer made of a polyimide resin prepared from PHDA, m-TLD, and DDE is preferred because of its small thermal expansion coefficient. Although and the molar ratio of DDE to PHD A ranges from 0 to 100 mol%, polyimide having a small thermal expansion coefficient can be obtained, but the thermal expansion coefficient decreases as the proportion of m-TLD increases. Particularly, when the proportion of the m-TLD is 50 to 100 mol%, the polyimide resin has a thermal expansion coefficient of 10 p p m / ° C or less, and this is suitable for accomplishing a thermal expansion coefficient of 10 to 20 ppm /. (: Or smaller circuit boards. Ceramic materials that can be used as the core layer of the insulating layer are suitably selected from those having a low thermal expansion coefficient, such as alumina, mullite, cordierite, silicon carbide, silicon nitride, Aluminum nitride, and zirconia. A method for producing a low thermal expansion (multilayer) circuit board according to the present invention will be exemplified with reference to the drawings. A circuit board precursor having a copper layer on one side thereof is prepared as follows, that is, a single Copper-clad laminated sheet. The first method shown in FIG. 1 includes metallizing an organic polymer layer (insulating layer) i by an appropriate combination of deposition, electroless plating, plating, etc. to form a Iron-record-based alloy layer 2 and a copper layer 3. The second method shown in Figs. 2 and 3 includes depositing, plating, coating, etc. A copper layer 6 is formed on both sides, a multilayer metal thread 7 is formed in advance as a wiring conductor, and an organic polymer layer 1 is formed on the surface of the multilayer metal foil 7 by, for example, casting. The third one shown in FIG. Method, including borrowing
448709 五 ^、發明說明(7) 績 '及熱及壓力黏結圖2中所示之多層金屬箔7至黏合劑 層8二而在有機聚合物層1形成一黏合劑層8。在圖5中所示 '’包含藉例如鑄製以及熱及壓力黏結一有機聚 ζί^Π 1 至 4 j_ », 黏合劑層8,對圖2中所示之多層金屬箔7提供一 fit,8 °在圖6中所示之第五方法,包含製備一有機聚 二曰人圖2中所示之多層金屬箔7,及一黏合劑片9,以及 ;蚀田—則片9熱及壓力黏結有機聚合物層1及多層金屬绪 黏合劑,包括五方法,作為黏合劑層8或黏合劑片9之 酚樹脂,聚酿亞胺斯樹脂及熱塑性樹脂,諸如環氧樹脂,苯 可根據製備單面樹:,及聚醯胺樹脂。 ίίΓ:電路板先質,亦即雙面銅包復叠ϊ f : f铸製黏合劑層或黏合劑片,將—對:::以- ΐϊί合。、經由勘合劑層或黏合劑片,層ΐ: Λ覆叠 !層_7在單面銅包覆疊…機聚=中所示之 措,雙面鋼包覆疊片。在使用第“第物五層側面,也可 ^早面銅包覆疊片製備雙面銅包覆疊片之’所獲得 行熱及壓力黏結二步驟。作為第一方法之一葙,"5時進 聚合物層1可在其兩面予以金屬化以製備 有機 片β w雙面銅包覆疊 除了以熱及壓力,經由鑄製黏合劑層或黏合劑# ^ ^ 有機聚合物層至心層之每一側所製備之複八姐4 .( 0絕緣層,代巷 有機聚合物層1外,可以如以上所說明之相同方々 > 7工、,永備一" 有一心層在其絕緣層之銅包覆疊)ΐ ^所包括之壓力黏奸步448709 Five, the description of the invention (7) and thermal and pressure bonding of the multilayer metal foil 7 to the adhesive layer 82 shown in FIG. 2 to form an adhesive layer 8 on the organic polymer layer 1. The `` shown in FIG. 5 '' includes, for example, casting and heat and pressure bonding of an organic polymer 1 to 4 j_, an adhesive layer 8 to provide a fit to the multilayer metal foil 7 shown in FIG. 2, 8 ° The fifth method shown in FIG. 6 includes preparing an organic polymer multilayer metal foil 7 shown in FIG. 2, and an adhesive sheet 9, and etch field—the sheet 9 heat and pressure Bonding organic polymer layer 1 and multi-layer metallic adhesives, including five methods, as phenol resin, adhesive resin 8 and adhesive resin layer 8 or adhesive sheet 9, such as epoxy resin, benzene can be prepared according to Single-sided tree:, and polyamide resin. ίίΓ: Circuit board precursors, that is, double-sided copper clad laminates 黏 f: f cast adhesive layer or adhesive sheet, will-pair ::: 以-ΐϊί compound. 2. Via the surveying agent layer or adhesive sheet, layer ΐ: Λ overlay! Layer _7 is shown in the single-sided copper clad lamination ... machine poly = measures, double-sided steel clad lamination. On the side of the "fifth layer", it is also possible to obtain the two-step thermal and pressure bonding of the double-sided copper-clad laminate prepared by the early-side copper-clad laminate. As one of the first methods, " At 5 o'clock, the polymer layer 1 can be metallized on both sides to prepare an organic sheet. Β w Double-sided copper cladding is removed by heat and pressure through a cast adhesive layer or an adhesive # ^ ^ Organic polymer layer to the heart Fu Bajie 4. (0 insulation layer, instead of the organic polymer layer 1 prepared on each side of the layer, can be the same way as explained above> 7 work, and always be ready "" There is a core layer in Its insulation layer is copper clad) ΐ ^ pressure pressure step included
44β 709 五、發明說明(8) 驟,可予以同時完成。一有心層在其絕緣層之銅包覆疊片, 可藉熱及壓力黏結,鑄製,以及金屬化之任何其他組合予以 製備。 藉一種習知減法過程,在單面或雙面銅包覆疊片形成一 電路圖案。可作成通孔通過雙面鋼包覆疊片。在作成通孔 通過一有導電材料(例如金屬)作為心層之雙面銅包覆疊片 之情形,必須避免在通孔與金屬心層間之電連接。亦即,預 先作成通孔通過一金属心層,並在有金屬心層之複合絕緣 層之兩面提供配線導體,作成小於金屬心層者之通孔,與 金屬心廣之通孔同心通過銅包覆叠片。而且,在形成通孔 後,電路板之兩表面及通孔之内壁可予以鍍敷銅。 現將解釋產生本發明之多層電路板之方法。如以上所 述,以已知多層電路板結構及已知方法,難以產生滿足方法 簡單及經濟,在電路層當中之連接之可靠性,及縮小間距之 所有要求。本發明正針對此點。不同於習知之集聚方法, 在本發明’層壓步驟之簡化及經濟性之改進,係藉在熱及壓 力下,同時一起黏結許多雙面電路板所達成。在電路層當 中之電連接,係藉一以焊料作成之導體,以獲得可靠性高"於 藉導電膏之習知連接所達成。層壓可藉暫時將一有通孔之 黏合劑月在正確位置黏附至雙面電路板,形成在黏合 之通孔焊塊,暫時將另一雙面電路板在正確位 合劑片,及最後在熱及壓力下,將疊片黏結成為J整體所# 施。 適合使用於製備多層電路板之黏合劑片,包括一片熱固44β 709 V. Description of the invention (8) can be completed at the same time. A copper-clad laminate with a core layer over its insulating layer can be prepared by heat and pressure bonding, casting, and any other combination of metallization. By a conventional subtraction process, a circuit pattern is formed on a single-sided or double-sided copper-clad laminate. It can be made into a through hole and laminated with double-sided steel. In the case of forming a via hole with a double-sided copper-clad laminate having a conductive material (such as a metal) as the core layer, it is necessary to avoid electrical connection between the via hole and the metal core layer. That is, a through hole is made in advance to pass through a metal core layer, and a wiring conductor is provided on both sides of the composite insulating layer with the metal core layer. A through hole smaller than the metal core layer is made, and passes through the copper core concentrically with the through hole of the metal core. Overlay. Moreover, after forming the through hole, both surfaces of the circuit board and the inner wall of the through hole can be plated with copper. A method of producing the multilayer circuit board of the present invention will now be explained. As mentioned above, with the known multi-layer circuit board structure and known methods, it is difficult to produce all the requirements that meet the requirements of simple and economical methods, reliability of connection in the circuit layer, and narrowing of the pitch. The present invention addresses this point. Unlike the conventional agglomeration method, the simplification of the lamination step and the improvement of economic efficiency in the present invention are achieved by simultaneously bonding a plurality of double-sided circuit boards together under heat and pressure. The electrical connection in the circuit layer is achieved by a conductor made of solder to achieve high reliability. The conventional connection is achieved by conductive paste. Lamination can temporarily attach a double-sided circuit board to the double-sided circuit board by temporarily adhering an adhesive with a through-hole in the correct position, temporarily placing another double-sided circuit board in the correct position, and finally Under heat and pressure, the laminated sheets are bonded to form a whole body. Adhesive sheet suitable for preparing multilayer circuit boards, including a piece of thermosetting
五、發明說明(9) 性或熱塑性樹脂,諸如環氧樹脂,苯酚樹脂f聚醯亞胺樹月t 及聚醯胺樹脂。聚醯亞胺樹脂因為其可靠性而為較佳。曰在 黏合劑片含有一種熱固性組份之情形,其應該予以在和制 之狀況下,暫時黏附至雙面電路板,以便在隨後壓力黏^至 多層電路板時,固化可不進行至致使喪失重新黏合性之°程 度。黏合劑片之厚度較佳為1 〇微米或較大,以供獲得可工 作性及供調平電路之不均勾性,並且較佳為2〇〇微米或較 小,以供減低多層電路板之總厚度。通孔可藉已知技術,諸 如鑽孔及衝孔作成。焊塊可藉電鍍或印刷以焊膏形成j焊 膏印刷因為其簡單性而為較佳。焊膏中之焊球之尺寸為 100微米或較小,較佳為50微米或較小,更較佳為2〇微米或 較小。根據絕緣層之種類及在安裝上之必要性,焊料成份 予以設計為具有適當熔點。只要黏合劑片可表明足夠黏刀合 性( 5 00克/厘米或較大),壓力黏結溫度可高於或低於焊料 之熔點。在溫度高於焊料之熔點,形成一金屬接合處。甚 至在溫度低於焊料之熔點,在電路層之間也獲得令人 之電連接。 " 圖7示本發明之多層電路板之實施例。圖號1 1為以一絕 緣層1 2所構成之雙面電路板,該層係以一種聚醯亞胺樹脂 ^ ,金屬v自(配線導體)1 3形成在其兩面所作成,雙金屬 法1 3係=—鐵-鎳~基合金箔14及銅箔1 5作為外層所構成 在此特定實施例,二雙面電路板予以層壓,以提供一有4電 路層之夕層電路板。每一雙面電路板丨1有一通孔1丨a鍍敷 銅’以提供—鍍敷通孔16,在兩面之雙金屬箔13藉其予以電 443709 五、發明說明(10) 連接。一雙面電路板丨丨經由一聚醯亞胺黏合劑層17予以接 合,並藉一以焊料作成之導體18彼此電連接。 .如下產生圖7之多層電路板予以。將一種聚醯亞胺先質 清漆施加至一鐵-鎳_基合金馆14,乾燥,並轉至一聚醯亞胺 層1 2,以製備一二層片。將二二層片在熱下,經由一黏合劑 片與聚醯亞胺層〗2壓力黏結彼此面對,以獲得圖8所示之三 層片20。在三層片20在預定位置鑽一通孔Ua,並且通孔 11a及合金箔14在兩面藉無電鍍敷及電鍍予以鍍敷銅。以 獲付圖ίο中所示之雙面鋼包覆疊片21,其中圖號15指示藉 銅鍵敷所形成之銅落。在雙金屬落13(以合金溶14及銅结 15所構成則作成—電路圖案,卩製備圖n中所示之 電路板11。一先前有—通孔17a作成在預定位置之黏 。劑片17,予以在熱下麼力黏結至雙面電路板丨丨之―側, :通孔1 7a如在圖1 2中所示,予以準確定位。圖i 2中之黏合 知片^7對應於圖7中之黏合劑層17。如圖13中所示,通孔5. Description of the invention (9) Properties or thermoplastic resins, such as epoxy resin, phenol resin, polyimide resin, and polyimide resin. Polyimide resins are preferred because of their reliability. In the case that the adhesive sheet contains a thermosetting component, it should be temporarily adhered to the double-sided circuit board in a state of harmony, so that when the subsequent pressure adhesion to the multi-layer circuit board, curing may not be carried out to cause loss of re-establishment. Degree of adhesion. The thickness of the adhesive sheet is preferably 10 micrometers or more for obtaining workability and unevenness of leveling circuits, and preferably 200 micrometers or less for reducing multilayer circuit boards. Of the total thickness. Through holes can be made by known techniques such as drilling and punching. Solder bumps can be formed from solder paste by electroplating or printing. Solder paste printing is preferred because of its simplicity. The size of the solder balls in the solder paste is 100 microns or less, preferably 50 microns or less, and more preferably 20 microns or less. The solder composition is designed to have an appropriate melting point depending on the type of insulation layer and the necessity for mounting. As long as the adhesive sheet can show sufficient adhesion (500 g / cm or larger), the pressure bonding temperature can be higher or lower than the melting point of the solder. At a temperature above the melting point of the solder, a metal joint is formed. Even at temperatures below the melting point of the solder, electrical connections are made between the circuit layers. " Fig. 7 shows an embodiment of a multilayer circuit board of the present invention. Drawing number 11 is a double-sided circuit board composed of an insulating layer 12, which is made of a polyimide resin ^, and a metal v is formed from (wiring conductor) 1 3 on both sides. The bimetal method 1 3 series = —iron-nickel-based alloy foil 14 and copper foil 15 as outer layers. In this particular embodiment, two double-sided circuit boards are laminated to provide a circuit board with four circuit layers. Each double-sided circuit board 1 has a through hole 1 and a plated copper 'to provide-a plated through hole 16 through which a double metal foil 13 is electrically connected 443709 V. Description of the invention (10) Connection. A double-sided circuit board is bonded via a polyimide adhesive layer 17 and is electrically connected to each other by a conductor 18 made of solder. The multilayer circuit board of FIG. 7 is produced as follows. A polyimide precursor varnish was applied to an iron-nickel-based alloy hall 14, dried, and transferred to a polyimide layer 12 to prepare a two-layer sheet. The two-layer and two-layer sheets are pressure-bonded to face each other through a pressure-sensitive adhesive sheet and the polyimide layer under heat to obtain the three-layer sheet 20 shown in FIG. 8. A through hole Ua is drilled in the three-layer sheet 20 at a predetermined position, and the through hole 11a and the alloy foil 14 are plated with copper by electroless plating and electroplating on both sides. The laminated sheet 21 is covered with a double-sided steel as shown in the drawing, wherein the reference number 15 indicates the copper drop formed by the copper keying. A circuit pattern is made on the bimetallic drop 13 (consisting of alloy solution 14 and copper junction 15), and the circuit board 11 shown in FIG. N is prepared. A previous one—the through hole 17a is made as a stick at a predetermined position. 17. Adhere to the side of the double-sided circuit board with heat force: The through hole 17a is accurately positioned as shown in Fig. 12. The adhesive film ^ 7 in Fig. I 2 corresponds to The adhesive layer 17 in Fig. 7. As shown in Fig. 13, the through hole
Li:板印刷,通過一以焊塊18形成之金屬掩模,予以填 n妙:—翠獨製備’有—通孔在預定位置之雙面電路板 在定位時,予以熱及壓力黏結至另一有焊塊丨8之雙 ^板11’藉以獲得圖7中所示之整體4層電路板,其中二 雙面電路板1 1經由接焊塊丨8予以電連。 Μ =處上述實施例,配線導體,亦即以鐵υ合金馆1 4及 =5組成之雙金屬们3,具有小熱膨脹係數,致使多層電 路:具有優異可靠十生。而且,以方法簡單並且經濟。 本發明現將參照實例更詳細予以例示,但請予暸解,本發Li: board printing, filled with n through a metal mask formed by solder bumps 18:-Tsui sole preparation 'Yes'-double-sided circuit boards with through holes in predetermined positions are bonded with heat and pressure to the other A double-sided board 11 ′ having soldering blocks 丨 8 is used to obtain the whole 4-layer circuit board shown in FIG. 7, in which two double-sided circuit boards 11 are electrically connected via soldering blocks 丨 8. Μ = In the above embodiment, the wiring conductor, that is, the bimetals 3 composed of the iron alloy museum 14 and = 5, has a small thermal expansion coefficient, resulting in a multi-layer circuit: having excellent and reliable lifetime. Moreover, the method is simple and economical. The present invention will now be illustrated in more detail with reference to examples, but please understand that the present invention
第14頁 ιϋ 70 9 五、發明說明(11) 明不視為限於此等實例° 實例1 將一種聚醯亞胺先質清漆(使ρ-苯二胺及3, 31,4, 41-聯 苯聯苯四叛酸雙酐在Ν -甲基甲基11比咯院酮反應所製備之 ρ ο 1 y a m i c酸清漆)施加至—以—種錦—鐵(以重量計,4 2 / 58%)合金(熱膨脹係數:5ppm/°C)作成之10微米厚金屬箔, 乾燥,並在400 °C,在一種氮大氣處置1小時,以形成聚醯亞Page 14 ϋ 70 9 V. Description of the invention (11) It is not considered to be limited to these examples. Example 1 A polyimide precursor varnish (making ρ-phenylenediamine and 3, 31, 4, 41-linked The ρ ο 1 yamic acid varnish prepared by the reaction of phenylbiphenyltetracarboxylic acid dianhydride in N-methylmethyl 11-pyrrolidone is applied to — to — brocade — iron (by weight, 4 2/58% ) Alloy (coefficient of thermal expansion: 5ppm / ° C) made of 10 micron thick metal foil, dried, and treated at 400 ° C in a nitrogen atmosphere for 1 hour to form polyfluorene
胺10微米厚。所產生之二層片予以在2〇〇。〇黏結至另一同 樣以聚醯亞胺層彼此面對,經由一 3 5微米厚聚醯亞胺黏合 劑片(Nippon Steel Chemical Co.,Ltd,生產之SPB-035A )所製備之二層片,同時施加4 〇公斤/平方厘米之壓力1小 j製備一三層片。然後藉無電鍍敷及電鍍將銅在合金 白ί著在二層片之每一侧,以一積著9微米之厚度,以製備 一雙面銅包覆疊片。 實例2 除了改變金\ (熱膨脹係數:1 1 口。金成伤至以重量計鎳/鐵=36/ 64% 例1之相同方式戶斤制ppm/ C )外,雙面銅包覆疊片係以與在實 實例3 製備。 除了改變金屬人 、 /8/60%(熱膨脹伤5金成份至以重量計為鎳/钴/鐵=32 以與在實例1之相.1 0ppm/㈠外,雙面鋼包覆疊片係 ^4 之相同方式所製備。 除了使用一聚破:Π·The amine was 10 microns thick. The resulting two-layer sheet was given at 2000. 〇 Adhesion to another two-layer sheet prepared with a polyimide layer facing each other via a 35 micron thick polyimide adhesive sheet (SPB-035A produced by Nippon Steel Chemical Co., Ltd.) At the same time, a pressure of 40 kg / cm 2 was applied to prepare a three-layer tablet. Copper was then deposited on each side of the two-layer sheet by electroless plating and electroplating to a thickness of 9 microns to prepare a double-sided copper-clad laminate. Example 2 Except for changing the gold (coefficient of thermal expansion: 1 1 port. Jin Cheng wound to nickel / iron = 36/64% by weight in the same way as in Example 1 ppm / C), a double-sided copper-clad laminated system Prepared in real Example 3. In addition to changing the metal man, / 8/60% (5 gold content of thermal expansion injury to nickel / cobalt / iron = 32 by weight to match the value in Example 1. 10 ppm / ㈠, the double-sided steel-clad laminated system ^ 4 was prepared in the same way. Except the use of a poly break: Π ·
胺黏合劑片,包含PMDA,m-TLD及DDEAmine adhesive tablets including PMDA, m-TLD and DDE
第15頁 448709 五、發明說明(12) 在克分子比5 0 / 4 0 / 1 〇外,雙面銅包覆疊片係以與在實例1之 相同方式所製備。 實例5 除了以一 30微米厚鎳/鐵(以重量計42/58%)合金層,在其 兩側有一35微米厚聚醯亞胺黏合劑片(spB —〇35A),代替聚 醯亞胺黏合劑片外,雙面銅包覆疊片係以與在實例1之相同 方式所製備。 實例6 除了以一50微米厚鎳/鐵(3 6/6 4%以重量計)合金層,在其 兩側有一35微米厚聚醯亞胺厚聚醯亞胺黏合劑片(3{^_ 0 3 5 A ),代替聚醯亞胺黏合劑片外,雙面銅包覆疊片係以與 在實例2之相同方式所製備。 實例7 除了以一2〇〇微米厚氮化鋁片(熱膨脹係數:4.3口0〇1/。(:), 在其兩侧有一35微米厚聚醯亞胺黏合劑片(SPB-035A),代 替聚醯亞胺黏合劑片外,雙面銅包覆疊片係以與在實例1之 相同方式所製備。 實例8 除了通孔在預定位置(請見圖9 )有一直徑〇. 2毫米予以鑽 孔通過三層片(在鋼鍍敷前)外,圖1〇中所示,有通孔之雙面 銅包覆疊片係以與在實例1之相同方式所製備。在銅箔在 每一側形成一電路圖案,以製備圖11中所示之雙面電路 板。將一先前在預定位置作成,有0. 2毫米直徑通孔之聚醯 亞胺黏合劑(SPB-035A),在180 °C在30公斤/平方厘米下,Page 15 448709 V. Description of the invention (12) A double-sided copper-clad laminate was prepared in the same manner as in Example 1 except for a molar ratio of 50/40/100. Example 5 In addition to a 30 micron thick nickel / iron (42/58% by weight) alloy layer, a 35 micron thick polyimide adhesive sheet (spB-035A) was used on both sides instead of polyimide Except for the adhesive sheet, a double-sided copper-clad laminate was prepared in the same manner as in Example 1. Example 6 Except for a 50 micron thick nickel / iron (3 6/6 4% by weight) alloy layer, a 35 micron thick polyimide thick polyimide adhesive sheet (3 {^ _ 0 3 5 A), instead of a polyimide adhesive sheet, a double-sided copper-clad laminate was prepared in the same manner as in Example 2. Example 7 In addition to a 200-micron-thick aluminum nitride sheet (coefficient of thermal expansion: 4.3 mm / mm) (:), there is a 35-micron-thick polyimide adhesive sheet (SPB-035A) on both sides, Instead of a polyimide adhesive sheet, a double-sided copper-clad laminate was prepared in the same manner as in Example 1. Example 8 except that the through hole was at a predetermined position (see Figure 9) and had a diameter of 0.2 mm to be Drilled through a three-layer sheet (before steel plating), as shown in Figure 10, a double-sided copper clad laminate with through holes was prepared in the same manner as in Example 1. The copper foil was A circuit pattern was formed on one side to prepare a double-sided circuit board as shown in Fig. 11. A polyimide adhesive (SPB-035A) previously prepared at a predetermined position and having a through-hole of 0.2 mm in diameter, was prepared in 180 ° C at 30 kg / cm2,
第16頁 448709 五、發明說明(13) ' 壓緊至雙面電路板之一侧30分鐘,同時如圖12中所示準確 定位。將焊膏(Nippon Sper ior K. K.所生產之SnBRA、 -3 A M Q ;惊點:2 6 0 C )通過一金屬掩模網板印刷在黏合劑 片,而以焊膏填滿通孔。在2 9 0 °C軟熔後,將助焊劑洗掉,以 形成如圖13所示之焊塊。所產生之有焊塊之板與另一單獨 製備之有通孔雙面電路板予以壓力黏結,同時在2〇〇 °c及3〇 公斤/平方厘米定位1小時,以獲得一4層電路板,二雙面電 路板在其經由焊塊予以電連接。 比較性营例1 將一種聚酿亞胺先質清漆(使p-苯二胺及3, 31,4, 41-聯 苯聯苯四羧酸雙酐在N-曱基曱基吡咯烷酮反應所製備之 polyamic酸清漆)施加至18微米厚軋製銅箔,乾燥,並在4〇〇 °C,在一種氮大氣處置1小時,以形成一有1〇微米厚度之聚 酿亞胺層。所產生之二層片予以在2〇(TC,在4〇公斤/平方 厘米之壓力下黏結至另—同樣以聚醯亞胺層彼此面對,經 由一35微米厚聚醯亞胺黏合劑片(SPB_〇35A)所製備之二層 片1小時,以製備一雙面銅包覆疊片。 比較性眚你丨2 除了環氧-銀焊膏予以網板印刷代替焊膏,並予以熱固化 外’ 4層電路板係以與在實例8之相同方式所製備。 在實例1至7及比較性實例1所製備之雙面銅包覆曼片之 熱膨脹係數,在溫度範圍自室溫(2 5 t)直到2 0 0 = t予以測 量。所獲得之結果示於以下之表1。 表1Page 16 448709 V. Description of the invention (13) '' Squeeze to one side of the double-sided circuit board for 30 minutes while positioning it accurately as shown in FIG. 12. Solder paste (SnBRA produced by Nippon Spice K. K., -3 A M Q; shock point: 2 60 C) was printed on an adhesive sheet through a metal mask screen, and the through holes were filled with the solder paste. After reflowing at 2900 ° C, the flux is washed off to form a solder bump as shown in Figure 13. The resulting board with solder bumps was pressure bonded to another separately prepared double-sided circuit board with through holes, and simultaneously positioned at 2000 ° C and 30 kg / cm2 for 1 hour to obtain a 4-layer circuit board. The two double-sided circuit boards are electrically connected through the solder bumps. Comparative Example 1 A polyimide precursor varnish prepared by reacting p-phenylenediamine and 3, 31, 4, 41-biphenylbiphenyltetracarboxylic dianhydride with N-fluorenylpyrrolidone Polyamic acid varnish) was applied to 18 micron thick rolled copper foil, dried, and treated at 400 ° C for one hour in a nitrogen atmosphere to form a polyimide layer having a thickness of 10 micron. The resulting two-layer sheet was bonded to another at 20 ° C. under a pressure of 40 kg / cm 2-again facing each other with a polyimide layer through a 35 micron thick polyimide adhesive sheet. (SPB_〇35A) The two-layer sheet prepared for 1 hour to prepare a double-sided copper-clad laminate. Comparative 眚 2 丨 2 except for epoxy-silver solder paste, screen printing instead of solder paste, and heat The cured outer 4-layer circuit board was prepared in the same manner as in Example 8. The thermal expansion coefficients of the double-sided copper-coated man-made sheets prepared in Examples 1 to 7 and Comparative Example 1 were in the temperature range from room temperature (2 5 t) Measured until 2 0 0 = t. The results obtained are shown in Table 1 below. Table 1
8810950].ptd 第17頁 a 48 70 9 五、發明說明(14) 熱膨脹 係數(ppm/ °C ) 實例1 7. 0 實例2 4.2 實例3 3.5 實例4 5.8 實例5 5.5 實例6 3.0 實例7 5.0 比較性 實例1 17.0 如自表1明白,根據本發明之電路板具有極小熱膨脹係 數,證明適合裸晶片安裝。 在實例8及比較性實例1所獲得之多層電路板予以經歷熱 循環測試,以評量塊連接之可靠性。因此,在二樣本1 00%之 塊接合處,緊接在熱及壓力黏結後,均示令人滿意之導電。 在給定125°〇乂30分鐘至-50它乂30分鐘之500次熱循環後, 貫例8中1 0 0 %之塊接合處達成導電,而比較性實例2中1 〇 %之 塊接合處示有缺點之電連接。本發明之多層電路板現在 經證明在可靠性優異。 、 雖然在實例8,藉網板印刷實施以焊膏填滿黏合劑片1 7 之通孔1 7a,但其可藉分配器施加或轉移施加予以完成。 雖然本發明業經詳細並參照其特定實例予以說明但 於此項技藝者將會明白,其中可作成各種變化及修改,而不8810950] .ptd Page 17a 48 70 9 V. Explanation of the invention (14) Coefficient of thermal expansion (ppm / ° C) Example 1 7. 0 Example 2 4.2 Example 3 3.5 Example 4 5.8 Example 5 5.5 Example 6 3.0 Example 7 5.0 Comparison Example 1 17.0 As can be understood from Table 1, the circuit board according to the present invention has a very small coefficient of thermal expansion, which proves suitable for bare chip mounting. The multilayer circuit boards obtained in Example 8 and Comparative Example 1 were subjected to a thermal cycle test to evaluate the reliability of the block connection. Therefore, at 100% of the joints of the two samples, immediately after thermal and pressure bonding, they showed satisfactory electrical conductivity. After giving 500 thermal cycles of 125 ° 30 minutes to -50 minutes 30 minutes, 100% of the joints in Example 8 became conductive, while 10% of the joints in Comparative Example 2 were joined. Defective electrical connections are shown. The multilayer circuit board of the present invention has now proven to be excellent in reliability. 7. Although in Example 8, the through-hole 17a of the adhesive sheet 17 was filled with solder paste by screen printing, it can be completed by a dispenser or a transfer application. Although the present invention has been described in detail and with reference to specific examples thereof, those skilled in the art will appreciate that various changes and modifications can be made therein without
4 48 7 0 9 案號88109501_年月 a 修正 五、發明說明(15) 偏離其精神及範圍。 元件編號說明 1 有機聚合物層 2 鐵-鎳-基合金層 3 銅層 5 鐵-鎳-基合金箔 6 銅層 7 多層金屬箔 8 黏合劑層 9 黏合劑片 11 雙面電路板 11a 通孔 12 絕緣層 13 雙金屬箔 14 鐵-鎳-基合金箔 15 銅络 16 鍍敷通孔 17 黏合劑片 17a 通孔 18 焊塊 20 三層片 21 雙面銅包覆疊片4 48 7 0 9 Case No. 88109501_year a. Amendment 5. Description of the invention (15) Deviation from its spirit and scope. Component number description 1 Organic polymer layer 2 Iron-nickel-based alloy layer 3 Copper layer 5 Iron-nickel-based alloy foil 6 Copper layer 7 Multi-layer metal foil 8 Adhesive layer 9 Adhesive sheet 11 Double-sided circuit board 11a Through hole 12 Insulating layer 13 Bimetal foil 14 Iron-nickel-based alloy foil 15 Copper network 16 Plated through hole 17 Adhesive sheet 17a Through hole 18 Solder block 20 Three layer sheet 21 Double-sided copper clad laminated sheet
\\326\2d-\90-03\88I09501.ptc 第 19 頁 ί# τ· 修正頁\\ 326 \ 2d- \ 90-03 \ 88I09501.ptc Page 19 ί # τ · Correction page
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US (1) | US6258449B1 (en) |
EP (1) | EP0964605A3 (en) |
JP (1) | JPH11354684A (en) |
KR (1) | KR20000006037A (en) |
CN (1) | CN1239863A (en) |
TW (1) | TW448709B (en) |
Cited By (1)
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US7927499B2 (en) | 2006-08-18 | 2011-04-19 | Advanced Semiconductor Engineering, Inc. | Substrate having blind hole and method for forming blind hole |
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JP2001060802A (en) * | 1999-08-19 | 2001-03-06 | Sony Corp | Circuit element substrate, semiconductor device and its manufacture |
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JP2003347742A (en) | 2002-05-27 | 2003-12-05 | Hitachi Ltd | Multilayer circuit board, method for its manufacturing, substrate for multilayer circuit and electronic device |
TWI243751B (en) * | 2003-10-21 | 2005-11-21 | Park Electrochemical Corp | Laminates having a low dielectric, low dissipation factor bond core and method of making same |
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JP2009206506A (en) * | 2008-01-31 | 2009-09-10 | Sanyo Electric Co Ltd | Substrate for mounting element and its manufacturing method, semiconductor module and portable device mounted with the same |
JPWO2010103941A1 (en) * | 2009-03-09 | 2012-09-13 | 株式会社村田製作所 | Flexible substrate |
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KR102412612B1 (en) * | 2015-08-28 | 2022-06-23 | 삼성전자주식회사 | board for package and prepreg |
JP6717238B2 (en) * | 2017-03-07 | 2020-07-01 | 三菱マテリアル株式会社 | Power module substrate with heat sink |
KR102335537B1 (en) * | 2019-06-28 | 2021-12-07 | 주식회사 아모그린텍 | Thin foil and manufacturing method for thin foil |
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-
1998
- 1998-06-09 JP JP10161108A patent/JPH11354684A/en active Pending
-
1999
- 1999-06-07 EP EP99110889A patent/EP0964605A3/en not_active Withdrawn
- 1999-06-08 TW TW088109501A patent/TW448709B/en active
- 1999-06-09 KR KR1019990021317A patent/KR20000006037A/en not_active Application Discontinuation
- 1999-06-09 US US09/328,485 patent/US6258449B1/en not_active Expired - Fee Related
- 1999-06-09 CN CN99107199A patent/CN1239863A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7927499B2 (en) | 2006-08-18 | 2011-04-19 | Advanced Semiconductor Engineering, Inc. | Substrate having blind hole and method for forming blind hole |
Also Published As
Publication number | Publication date |
---|---|
JPH11354684A (en) | 1999-12-24 |
EP0964605A2 (en) | 1999-12-15 |
EP0964605A3 (en) | 2001-08-22 |
CN1239863A (en) | 1999-12-29 |
US6258449B1 (en) | 2001-07-10 |
KR20000006037A (en) | 2000-01-25 |
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