TW200703662A - Wiring for display device and thin film transistor array panel including the same and method for manufacturing thereof - Google Patents

Wiring for display device and thin film transistor array panel including the same and method for manufacturing thereof

Info

Publication number
TW200703662A
TW200703662A TW095118099A TW95118099A TW200703662A TW 200703662 A TW200703662 A TW 200703662A TW 095118099 A TW095118099 A TW 095118099A TW 95118099 A TW95118099 A TW 95118099A TW 200703662 A TW200703662 A TW 200703662A
Authority
TW
Taiwan
Prior art keywords
manufacturing
thin film
film transistor
transistor array
layer
Prior art date
Application number
TW095118099A
Other languages
English (en)
Other versions
TWI406416B (zh
Inventor
Won-Suk Shin
Yang-Ho Bae
Hong-Sick Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200703662A publication Critical patent/TW200703662A/zh
Application granted granted Critical
Publication of TWI406416B publication Critical patent/TWI406416B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW095118099A 2005-05-27 2006-05-22 顯示器之佈線及包括該佈線之薄膜電晶體陣列面板及製造該陣列面板之方法 TWI406416B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050044802A KR101152127B1 (ko) 2005-05-27 2005-05-27 표시 장치용 배선, 이를 포함하는 박막 트랜지스터 표시판및 그 제조 방법

Publications (2)

Publication Number Publication Date
TW200703662A true TW200703662A (en) 2007-01-16
TWI406416B TWI406416B (zh) 2013-08-21

Family

ID=37443493

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118099A TWI406416B (zh) 2005-05-27 2006-05-22 顯示器之佈線及包括該佈線之薄膜電晶體陣列面板及製造該陣列面板之方法

Country Status (5)

Country Link
US (1) US20060269786A1 (zh)
JP (1) JP5230909B2 (zh)
KR (1) KR101152127B1 (zh)
CN (1) CN1869797B (zh)
TW (1) TWI406416B (zh)

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EP2381743A1 (fr) * 2006-09-07 2011-10-26 Saint-Gobain Glass France Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique
EP2408269B1 (fr) * 2006-11-17 2017-01-18 Saint-Gobain Glass France Electrode pour dispositif electroluminescent organique ainsi que dispositif electroluminescent organique l'incorporant
FR2913146B1 (fr) * 2007-02-23 2009-05-01 Saint Gobain Electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications
FR2924274B1 (fr) 2007-11-22 2012-11-30 Saint Gobain Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant, et sa fabrication
FR2925981B1 (fr) * 2007-12-27 2010-02-19 Saint Gobain Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant.
FR2936358B1 (fr) 2008-09-24 2011-01-21 Saint Gobain Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouverture submillimetriques, grille electroconductrice submillimetrique.
FR2936362B1 (fr) 2008-09-25 2010-09-10 Saint Gobain Procede de fabrication d'une grille submillimetrique electroconductrice revetue d'une grille surgrille, grille submillimetrique electroconductrice revetue d'une surgrille
KR101182403B1 (ko) 2008-12-22 2012-09-13 한국전자통신연구원 투명 트랜지스터 및 그의 제조 방법
FR2944145B1 (fr) 2009-04-02 2011-08-26 Saint Gobain Procede de fabrication d'une structure a surface texturee pour dispositif a diode electroluminescente organique et structure a surface texturee
FR2955575B1 (fr) 2010-01-22 2012-02-24 Saint Gobain Substrat verrier revetu d'une couche haut indice sous un revetement electrode et dispositif electroluminescent organique comportant un tel substrat.
US20110227467A1 (en) * 2010-03-18 2011-09-22 Foot Traffic Media Group, LLC Media island
KR101692954B1 (ko) * 2010-05-17 2017-01-05 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
KR20130007053A (ko) * 2011-06-28 2013-01-18 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
KR101815256B1 (ko) 2011-06-28 2018-01-08 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
JP5827088B2 (ja) * 2011-09-27 2015-12-02 セイコーインスツル株式会社 電子部品の端子接続構造、パッケージ、圧電振動子、発振器、電子機器および電波時計
KR102022396B1 (ko) * 2013-02-20 2019-09-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN105842941B (zh) * 2015-01-13 2019-07-05 群创光电股份有限公司 显示面板
US20170162609A1 (en) * 2015-12-08 2017-06-08 Innolux Corporation Display panel and manufacturing method thereof
CN106856199B (zh) * 2015-12-08 2020-04-24 群创光电股份有限公司 显示面板及其制造方法
CN106910779A (zh) * 2017-04-06 2017-06-30 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及其制备方法和显示装置
KR20190137458A (ko) * 2018-06-01 2019-12-11 삼성전자주식회사 Led를 이용한 디스플레이 모듈 제조방법
JP2022115708A (ja) * 2021-01-28 2022-08-09 凸版印刷株式会社 表示装置及び波長変換基板

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Also Published As

Publication number Publication date
KR101152127B1 (ko) 2012-06-15
CN1869797A (zh) 2006-11-29
US20060269786A1 (en) 2006-11-30
JP2006332674A (ja) 2006-12-07
CN1869797B (zh) 2010-09-01
KR20060122382A (ko) 2006-11-30
TWI406416B (zh) 2013-08-21
JP5230909B2 (ja) 2013-07-10

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