SU1691432A1 - Method of producing thin single crystal films - Google Patents

Abstract

The invention relates to the production of thin single-crystal films, can be used in microelectronics for the production of solid-state electronic devices and provides films of oxides of perfect structure and a given orientation. The method involves melting a polycrystalline substrate and saturating the melt with oxygen to a concentration exceeding its solubility in the solid phase. An electron beam is then fed to the melt at an angle not exceeding the critical angle of axial channeling of the oxide grown. Cooling is carried out at a rate that ensures film growth on the surface of the melt. The Cu20 films with a thickness of up to 2 nm were obtained on a copper substrate. 3 il.

Description

The invention relates to the production of thin single-crystal films and can be used in microelectronics for the production of solid-state electronic devices.

The purpose of the invention is to obtain oxide films of perfect structure and predetermined orientation.

Example 1. Upon receipt of the Cu20 film, Cu20 use a device placed in the electron microscope UEVM-100K in place of the selector diaphragm. Pure copper in the amount of 3 to 5 g is placed in a cell, the devices, after which it is melted (mp. 1356 K) and heated to (T) 1500 K. Then, the melt is saturated with oxygen to a concentration of 0.015 mol. % with an increase in the partial pressure of oxygen in the working volume of up to 10 Pa. After isothermal exposure, which is necessary to establish oxygen equilibrium, an electron beam is directed to the surface of the melt (accelerating

a voltage of 50 kV, a beam current of 125 mA, a beam diameter of 50 µm) at an angle less than the critical angle of axial channeling Cu20, in the order of 4 °. When the melt is cooled at a rate of 1 K / s, which provides layer-by-layer growth of the oxide film, a highly perfect single crystal of cuprite is formed at the spot where the beam hits the surface, scattering on which electrons form a diffraction pattern consisting of continuous oxide planes thickness up to 2.0 nm.

Fig. 1 shows an electron diffraction pattern of reflection from the polycrystalline surface of copper; and in fig. 2 - the same, from the received film SiaO; in fig. 3 - electronogram.

Example 2. According to the method of example 1, a single germanium crystal was obtained on the surface of germanium. The high quality of the crystal is confirmed not only by the presence of thin bands on the electron diffraction pattern, but also by the QO

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heaps of lines indicating the orientation of the atomic chains of the crystal along the beam.

The essential differences of the proposed method are due to the orienting effect of the electromagnetic field of the flying electrons on the growth of the atomic chains of the nucleating crystal. With gliding angles of incidence on the surface less than a certain critical value, the formation of a growing crystal is determined by the effect of axial canalization. At the same time, the chains of atoms of the growing crystal are drawn along the direction of the electron beam, in which the electrons do not collide with atomic chains and the momentum of the accelerated particles almost changes. The presence of the channeling effect is confirmed by the appearance of Kikuchi lines on the fluorescent screen of the microscope. In the absence of epitaxy, this mechanism has a major effect on the orientation of crystals,

The proposed method for producing single crystals on the surface of a metal matrix provides the following advantages compared with known methods:

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the possibility of obtaining a single crystal in the form of a thin film with a given orchestration;

the possibility of obtaining several single crystals on one substrate with different pre-selected orientations.

All this allows the use of the proposed method to obtain microelement structures with desired electrophysical characteristics.

Claims (1)

Invention Formula The method of producing thin single-crystal films by melting a polycrystalline substrate and crystallization when exposed to a melt of a high-energy electron beam and cooling, characterized in that, to obtain oxide films of perfect structure and a given orientation, after melting the melt with saturating oxygen to a concentration exceeding its solubility solid phase, the electron beam is directed to the surface of the melt below the menus, not exceeding the critical angle of axial kanzlirovaniya growing This oxide and cooling are carried out at a rate that ensures film growth on the surface of the melt. 2