SG170031A1 - Nitride semiconductor component and process for its production - Google Patents

Nitride semiconductor component and process for its production

Info

Publication number
SG170031A1
SG170031A1 SG201101341-4A SG2011013414A SG170031A1 SG 170031 A1 SG170031 A1 SG 170031A1 SG 2011013414 A SG2011013414 A SG 2011013414A SG 170031 A1 SG170031 A1 SG 170031A1
Authority
SG
Singapore
Prior art keywords
layer
nitride
deposited
nitride semiconductor
silicon surface
Prior art date
Application number
SG201101341-4A
Inventor
Armin Dadgar
Alois Krost
Original Assignee
Azzurro Semiconductors Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE200610008929 external-priority patent/DE102006008929A1/en
Application filed by Azzurro Semiconductors Ag filed Critical Azzurro Semiconductors Ag
Publication of SG170031A1 publication Critical patent/SG170031A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Ceramic Products (AREA)

Abstract

The invention relates to a method for producing a layer structure of a nitride semiconductor component on a silicon surface, said method comprising the following steps: a substrate having a silicon surface is prepared; a nitride nucleation layer containing aluminium is deposited on the silicon surface of the substrate; a nitride buffer layer containing aluminium is optionally deposited on the nitride nucleation layer; a masking layer is deposited on the nitride nucleation layer or on the first nitride buffer layer if present; and a first nitride semiconductor layer containing gallium is deposited on the masking layer, the masking layer being deposited in such a way that separate crystallites first intergrow in the deposition step of the first nitride semiconductor layer, above a coalescence layer thickness, and cover an average surface of at least 0,16 μm2 in a layer plane of the intergrowing nitride semiconductor layer, perpendicularly to the direction of growth.
SG201101341-4A 2006-02-23 2007-02-22 Nitride semiconductor component and process for its production SG170031A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77645706P 2006-02-23 2006-02-23
DE200610008929 DE102006008929A1 (en) 2006-02-23 2006-02-23 Layer structure production for nitride semiconductor component on silicon surface, involves preparation of substrate having silicon surface on which nitride nucleation layer is deposited with masking layer

Publications (1)

Publication Number Publication Date
SG170031A1 true SG170031A1 (en) 2011-04-29

Family

ID=38020245

Family Applications (2)

Application Number Title Priority Date Filing Date
SG201101341-4A SG170031A1 (en) 2006-02-23 2007-02-22 Nitride semiconductor component and process for its production
SG10201405004WA SG10201405004WA (en) 2006-02-23 2007-02-22 Nitride semiconductor component and process for its production

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201405004WA SG10201405004WA (en) 2006-02-23 2007-02-22 Nitride semiconductor component and process for its production

Country Status (10)

Country Link
EP (4) EP1875523B1 (en)
JP (4) JP5393158B2 (en)
KR (4) KR101693849B1 (en)
CN (1) CN102064091B (en)
AT (1) ATE483249T1 (en)
DE (1) DE502007005172D1 (en)
HK (1) HK1116922A1 (en)
MY (1) MY149325A (en)
SG (2) SG170031A1 (en)
WO (1) WO2007096405A1 (en)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006525682A (en) 2003-04-30 2006-11-09 クリー　インコーポレイテッド High power solid state light emitting device package
US9406505B2 (en) 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
EP2031641B1 (en) * 2007-08-31 2012-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Semiconductor element and its use
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
KR101004858B1 (en) * 2008-11-06 2010-12-28 삼성엘이디 주식회사 Compound semiconductor light emitting device and method for manufacturing the same
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
DE102009036843A1 (en) 2009-08-10 2011-02-17 Osram Opto Semiconductors Gmbh Method for producing a light-emitting diode and light-emitting diode
DE102009047881B4 (en) 2009-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Process for producing an epitaxially produced layer structure
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
KR101081169B1 (en) 2010-04-05 2011-11-07 엘지이노텍 주식회사 Light emitting device and method for fabricating the same, light emitting device package, lighting system
US8692261B2 (en) 2010-05-19 2014-04-08 Koninklijke Philips N.V. Light emitting device grown on a relaxed layer
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
WO2011162715A1 (en) 2010-06-24 2011-12-29 Glo Ab Substrate with buffer layer for oriented nanowire growth
WO2012035135A1 (en) * 2010-09-19 2012-03-22 Osram Opto Semiconductors Gmbh Semiconductor chip and method for producing the same
KR20120032329A (en) * 2010-09-28 2012-04-05 삼성전자주식회사 Semiconductor device
DE102010048617A1 (en) * 2010-10-15 2012-04-19 Osram Opto Semiconductors Gmbh Method for producing a semiconductor layer sequence, radiation-emitting semiconductor chip and optoelectronic component
US20120119184A1 (en) * 2010-11-12 2012-05-17 Kung-Hsieh Hsu Vertical Light Emitting Diode (VLED) Die Having N-Type Confinement Structure With Etch Stop Layer And Method Of Fabrication
US20120292648A1 (en) * 2011-05-16 2012-11-22 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
US9312436B2 (en) 2011-05-16 2016-04-12 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
US8664679B2 (en) * 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US9012921B2 (en) * 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
DE102011114671A1 (en) 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
DE102011114670A1 (en) * 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
JP5228122B1 (en) 2012-03-08 2013-07-03 株式会社東芝 Nitride semiconductor device and nitride semiconductor wafer
CN106968014B (en) * 2012-03-21 2019-06-04 弗赖贝格化合物原料有限公司 It is used to prepare the method and III-N monocrystalline of III-N monocrystalline
DE102012103686B4 (en) 2012-04-26 2021-07-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxial substrate, method for producing an epitaxial substrate and optoelectronic semiconductor chip with an epitaxial substrate
US8946773B2 (en) 2012-08-09 2015-02-03 Samsung Electronics Co., Ltd. Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure
CN103578926B (en) 2012-08-09 2018-01-02 三星电子株式会社 Semiconductor buffer structure, semiconductor devices and the method for manufacturing semiconductor devices
JP5421442B1 (en) 2012-09-26 2014-02-19 株式会社東芝 Nitride semiconductor wafer, nitride semiconductor device, and method of manufacturing nitride semiconductor wafer
DE102012217631B4 (en) 2012-09-27 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic component with a layer structure
JP5944301B2 (en) * 2012-11-19 2016-07-05 株式会社東芝 Manufacturing method of semiconductor light emitting device
JP5296255B1 (en) 2012-11-21 2013-09-25 株式会社東芝 Nitride semiconductor device, nitride semiconductor wafer, and method of forming nitride semiconductor layer
JP5460831B1 (en) 2012-11-22 2014-04-02 株式会社東芝 Semiconductor light emitting device
CN104241262B (en) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 Light emitting device and display device
JP6270536B2 (en) 2013-06-27 2018-01-31 株式会社東芝 Nitride semiconductor device, nitride semiconductor wafer, and method of forming nitride semiconductor layer
JP2014068018A (en) * 2013-10-07 2014-04-17 Toshiba Corp Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element
DE102014105303A1 (en) 2014-04-14 2015-10-15 Osram Opto Semiconductors Gmbh Method for producing a layer structure as a buffer layer of a semiconductor device and layer structure as a buffer layer of a semiconductor device
CN103985799B (en) * 2014-06-05 2017-03-22 天津三安光电有限公司 Light-emitting diode and manufacturing method thereof
JP6264628B2 (en) * 2017-01-13 2018-01-24 アルパッド株式会社 Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer
US10242866B2 (en) * 2017-03-08 2019-03-26 Lam Research Corporation Selective deposition of silicon nitride on silicon oxide using catalytic control
EP3451364B1 (en) * 2017-08-28 2020-02-26 Siltronic AG Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
JP6437083B2 (en) * 2017-12-06 2018-12-12 アルパッド株式会社 Semiconductor wafer and semiconductor device
US11410937B2 (en) 2020-03-06 2022-08-09 Raytheon Company Semiconductor device with aluminum nitride anti-deflection layer
US12002773B2 (en) 2021-03-03 2024-06-04 Raytheon Company Hybrid pocket post and tailored via dielectric for 3D-integrated electrical device
US11894477B2 (en) 2021-05-17 2024-02-06 Raytheon Company Electrical device with stress buffer layer and stress compensation layer
US11851785B2 (en) 2021-05-21 2023-12-26 Raytheon Company Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device
TWI785864B (en) * 2021-10-27 2022-12-01 財團法人工業技術研究院 Semiconductor substrate and transistor
EP4345922A1 (en) 2022-09-30 2024-04-03 ALLOS Semiconductors GmbH Gan-on-si epiwafer comprising a strain-decoupling sub-stack

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135832A (en) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd Gallium nitride group compound semiconductor and manufacture therefor
TW417315B (en) * 1998-06-18 2001-01-01 Sumitomo Electric Industries GaN single crystal substrate and its manufacture method of the same
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
JP3603713B2 (en) * 1999-12-27 2004-12-22 豊田合成株式会社 Method of growing group III nitride compound semiconductor film and group III nitride compound semiconductor device
FR2810159B1 (en) * 2000-06-09 2005-04-08 Centre Nat Rech Scient THICK LAYER OF GALLIUM NITRIDE OR MIXED NITRIDE OF GALLIUM AND ANOTHER METAL, PROCESS FOR PREPARING THE SAME, AND ELECTRONIC OR OPTOELECTRONIC DEVICE COMPRISING SUCH A LAYER
US6630692B2 (en) * 2001-05-29 2003-10-07 Lumileds Lighting U.S., Llc III-Nitride light emitting devices with low driving voltage
JP2003063897A (en) * 2001-08-28 2003-03-05 Sony Corp Nitride-based iii-v group compound semiconductor substrate and method for producing the same, method for producing light emitting device of semiconductor and method for producing semiconductor device
DE10151092B4 (en) * 2001-10-13 2012-10-04 Azzurro Semiconductors Ag Method for producing planar and crack-free Group III nitride-based light emitting structures on silicon substrate
JP4041908B2 (en) * 2001-12-19 2008-02-06 サンケン電気株式会社 Manufacturing method of semiconductor light emitting device
JP4118061B2 (en) * 2002-02-07 2008-07-16 三洋電機株式会社 Semiconductor forming method and semiconductor element
JP2003249642A (en) * 2002-02-22 2003-09-05 Fuji Xerox Co Ltd Hetero junction semiconductor element and manufacturing method therefor
JP4100013B2 (en) * 2002-03-14 2008-06-11 日亜化学工業株式会社 Nitride semiconductor laser device and manufacturing method thereof
JP4233268B2 (en) * 2002-04-23 2009-03-04 シャープ株式会社 Nitride-based semiconductor light-emitting device and manufacturing method thereof
CN1228478C (en) * 2002-11-13 2005-11-23 中国科学院物理研究所 Method for preparing gallium nitride single crystal film
JP2004200347A (en) * 2002-12-18 2004-07-15 Sumitomo Electric Ind Ltd Light emitting diode with high heat dissipation capability
TWI230978B (en) * 2003-01-17 2005-04-11 Sanken Electric Co Ltd Semiconductor device and the manufacturing method thereof
EP1588414B1 (en) * 2003-01-31 2014-12-03 OSRAM Opto Semiconductors GmbH Method for the separation of a semiconductor layer by laser pulses
JP3760997B2 (en) * 2003-05-21 2006-03-29 サンケン電気株式会社 Semiconductor substrate
JP2005223165A (en) * 2004-02-06 2005-08-18 Sanyo Electric Co Ltd Nitride-based light emitting element
JP4868709B2 (en) * 2004-03-09 2012-02-01 三洋電機株式会社 Light emitting element
EP1749308A4 (en) * 2004-04-28 2011-12-28 Verticle Inc Vertical structure semiconductor devices
DE102004038573A1 (en) 2004-08-06 2006-03-16 Azzurro Semiconductors Ag Epitaxially growing thick tear-free group III nitride semiconductor layers used in the production of modern opto-electronic and electronic components comprises using an aluminum-containing group III nitride intermediate layer

Also Published As

Publication number Publication date
CN102064091A (en) 2011-05-18
KR20150123294A (en) 2015-11-03
EP2112699A2 (en) 2009-10-28
JP2015216378A (en) 2015-12-03
KR20080104014A (en) 2008-11-28
JP2009527913A (en) 2009-07-30
EP2112699B1 (en) 2020-05-06
EP3731283A1 (en) 2020-10-28
JP5393158B2 (en) 2014-01-22
JP2013219391A (en) 2013-10-24
KR101693849B1 (en) 2017-01-06
WO2007096405A1 (en) 2007-08-30
HK1116922A1 (en) 2009-01-02
EP1875523A1 (en) 2008-01-09
KR20100017895A (en) 2010-02-16
JP2011233936A (en) 2011-11-17
KR20150123293A (en) 2015-11-03
SG10201405004WA (en) 2014-10-30
DE502007005172D1 (en) 2010-11-11
MY149325A (en) 2013-08-30
EP2112699A3 (en) 2009-12-30
ATE483249T1 (en) 2010-10-15
EP1875523B1 (en) 2010-09-29
EP3731284A1 (en) 2020-10-28
CN102064091B (en) 2013-03-20

Similar Documents

Publication Publication Date Title
SG170031A1 (en) Nitride semiconductor component and process for its production
WO2003031679A3 (en) Method for depositing metal layers employing sequential deposition techniques
WO2004075248A3 (en) Surface-coating method, production of microelectronic interconnections using said method and integrated circuits
ATE518239T1 (en) METHOD FOR UV PRETREATMENT OF ULTRATHIN OXYNITRIDE FOR PRODUCING SILICON NITRIDE LAYERS
WO2006113539A3 (en) Semiconductor devices having gallium nitride epilayers on diamond substrates
EP2528087A3 (en) Formation of devices by epitaxial layer overgrowth
ATE491227T1 (en) METHOD FOR PRODUCING INTERCONNECT CONNECTIONS FOR SEMICONDUCTOR COMPONENTS
WO2005084231A3 (en) Germanium deposition
TW200801255A (en) Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
WO2002080244A3 (en) Improved process for deposition of semiconductor films
GB2417137A (en) A method of forming a metal gate structure with tuning of work function by silicon incorporation
EP1245702A3 (en) Process for producing a gallium nitride crystal substrate
TW200606168A (en) Copper (I) compounds useful as deposition precursors of copper thin films
WO2003076678A3 (en) Ald method and apparatus
TW200943393A (en) A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer
TW200622022A (en) A method and system for forming a passivated metal layer
EP1619276A3 (en) Homoepitaxial growth of SiC on low off-axis SiC wafers
EP1288346A3 (en) Method of manufacturing compound single crystal
TW200617197A (en) Deposition of ruthenium and/or ruthenium oxide films
CN106206258B (en) The method and GaN substrate of GaN layer are formed on a silicon substrate
WO2007147020A3 (en) Cobalt precursors useful for forming cobalt-containing films on substrates
EP2472567A3 (en) Semiconductor layer
EP2031642A3 (en) Group III nitride semiconductor and a manufacturing method thereof
TW200723365A (en) Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
TW200723369A (en) Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition