SG11201604437RA - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

Info

Publication number
SG11201604437RA
SG11201604437RA SG11201604437RA SG11201604437RA SG11201604437RA SG 11201604437R A SG11201604437R A SG 11201604437RA SG 11201604437R A SG11201604437R A SG 11201604437RA SG 11201604437R A SG11201604437R A SG 11201604437RA SG 11201604437R A SG11201604437R A SG 11201604437RA
Authority
SG
Singapore
Prior art keywords
semiconductor device
bonding wire
bonding
wire
semiconductor
Prior art date
Application number
SG11201604437RA
Other languages
English (en)
Inventor
Daizo Oda
Motoki Eto
Takashi Yamada
Teruo Haibara
Ryo Oishi
Tomohiro Uno
Tetsuya Oyamada
Original Assignee
Nippon Micrometal Corp
Nippon Steel & Sumikin Mat Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Micrometal Corp, Nippon Steel & Sumikin Mat Co filed Critical Nippon Micrometal Corp
Publication of SG11201604437RA publication Critical patent/SG11201604437RA/en

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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
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SG11201604437RA 2015-02-26 2015-06-05 Bonding wire for semiconductor device SG11201604437RA (en)

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EP3667710B1 (en) * 2017-08-09 2022-01-05 NIPPON STEEL Chemical & Material Co., Ltd. Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
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KR20240015610A (ko) * 2021-06-25 2024-02-05 닛데쓰마이크로메탈가부시키가이샤 반도체 장치용 본딩 와이어

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US20170323864A1 (en) 2017-11-09
KR20160114042A (ko) 2016-10-04
TWI550638B (zh) 2016-09-21
CN107041160B (zh) 2018-10-02
KR101728650B1 (ko) 2017-04-19
CN107041160A (zh) 2017-08-11
JP2016164991A (ja) 2016-09-08
WO2016135993A1 (ja) 2016-09-01
JPWO2016135993A1 (ja) 2017-04-27
KR102162906B1 (ko) 2020-10-07
MY160982A (en) 2017-03-31
TW201631601A (zh) 2016-09-01
KR20170113528A (ko) 2017-10-12
US10032741B2 (en) 2018-07-24
EP3086362A1 (en) 2016-10-26
EP3086362A4 (en) 2017-05-31

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