NO119844B - - Google Patents
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- Publication number
- NO119844B NO119844B NO162890A NO16289066A NO119844B NO 119844 B NO119844 B NO 119844B NO 162890 A NO162890 A NO 162890A NO 16289066 A NO16289066 A NO 16289066A NO 119844 B NO119844 B NO 119844B
- Authority
- NO
- Norway
- Prior art keywords
- insulating material
- metallized
- contact
- silicon
- insulating body
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 239000011810 insulating material Substances 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000005686 electrostatic field Effects 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000012774 insulation material Substances 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 4
- 239000005297 pyrex Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- AOSZTAHDEDLTLQ-AZKQZHLXSA-N (1S,2S,4R,8S,9S,11S,12R,13S,19S)-6-[(3-chlorophenyl)methyl]-12,19-difluoro-11-hydroxy-8-(2-hydroxyacetyl)-9,13-dimethyl-6-azapentacyclo[10.8.0.02,9.04,8.013,18]icosa-14,17-dien-16-one Chemical compound C([C@@H]1C[C@H]2[C@H]3[C@]([C@]4(C=CC(=O)C=C4[C@@H](F)C3)C)(F)[C@@H](O)C[C@@]2([C@@]1(C1)C(=O)CO)C)N1CC1=CC=CC(Cl)=C1 AOSZTAHDEDLTLQ-AZKQZHLXSA-N 0.000 description 1
- 229940126657 Compound 17 Drugs 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/02—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing by fusing glass directly to metal
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/65—Reaction sintering of free metal- or free silicon-containing compositions
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
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- C04B2235/666—Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
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- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
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- H01L2924/12036—PN diode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Joining Of Glass To Other Materials (AREA)
- Die Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45360065A | 1965-05-06 | 1965-05-06 | |
US51177165A | 1965-12-06 | 1965-12-06 | |
US583907A US3397278A (en) | 1965-05-06 | 1966-10-03 | Anodic bonding |
Publications (1)
Publication Number | Publication Date |
---|---|
NO119844B true NO119844B (pt) | 1970-07-13 |
Family
ID=27412574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO162890A NO119844B (pt) | 1965-05-06 | 1966-05-05 |
Country Status (13)
Country | Link |
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US (1) | US3397278A (pt) |
JP (1) | JPS5328747B1 (pt) |
BE (1) | BE680529A (pt) |
BR (1) | BR6679299D0 (pt) |
CH (1) | CH451273A (pt) |
DE (1) | DE1665042A1 (pt) |
DK (1) | DK127988B (pt) |
FR (1) | FR1478918A (pt) |
GB (1) | GB1138401A (pt) |
IL (1) | IL25656A (pt) |
NL (1) | NL153720B (pt) |
NO (1) | NO119844B (pt) |
SE (1) | SE351518B (pt) |
Families Citing this family (182)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3470348A (en) * | 1966-04-18 | 1969-09-30 | Mallory & Co Inc P R | Anodic bonding of liquid metals to insulators |
US3506545A (en) * | 1967-02-14 | 1970-04-14 | Ibm | Method for plating conductive patterns with high resolution |
US3506424A (en) * | 1967-05-03 | 1970-04-14 | Mallory & Co Inc P R | Bonding an insulator to an insulator |
US3521128A (en) * | 1967-08-02 | 1970-07-21 | Rca Corp | Microminiature electrical component having integral indexing means |
US3577629A (en) * | 1968-10-18 | 1971-05-04 | Mallory & Co Inc P R | Bonding oxidizable metals to insulators |
US3722074A (en) * | 1969-04-21 | 1973-03-27 | Philips Corp | Method of sealing a metal article to a glass article in a vacuum-tight manner |
JPS4831507B1 (pt) * | 1969-07-10 | 1973-09-29 | ||
US3697917A (en) * | 1971-08-02 | 1972-10-10 | Gen Electric | Semiconductor strain gage pressure transducer |
US3783218A (en) * | 1972-01-12 | 1974-01-01 | Gen Electric | Electrostatic bonding process |
US3775839A (en) * | 1972-03-27 | 1973-12-04 | Itt | Method of making a transducer |
US3778896A (en) * | 1972-05-05 | 1973-12-18 | Bell & Howell Co | Bonding an insulator to an inorganic member |
US3781978A (en) * | 1972-05-16 | 1974-01-01 | Gen Electric | Process of making thermoelectrostatic bonded semiconductor devices |
BE792414A (fr) * | 1972-06-21 | 1973-03-30 | Siemens Ag | Procede d'etablissement d'une liaison etanche aux gaz pour des pieces en silicium ou carbure de silicium cristallin |
US4034181A (en) * | 1972-08-18 | 1977-07-05 | Minnesota Mining And Manufacturing Company | Adhesive-free process for bonding a semiconductor crystal to an electrically insulating, thermally conductive stratum |
US3803706A (en) * | 1972-12-27 | 1974-04-16 | Itt | Method of making a transducer |
US3951707A (en) * | 1973-04-02 | 1976-04-20 | Kulite Semiconductor Products, Inc. | Method for fabricating glass-backed transducers and glass-backed structures |
US3805377A (en) * | 1973-04-18 | 1974-04-23 | Itt | Method of making a transducer |
JPS5527120Y2 (pt) * | 1974-03-28 | 1980-06-28 | ||
US3902979A (en) * | 1974-06-24 | 1975-09-02 | Westinghouse Electric Corp | Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication |
US3953920A (en) * | 1975-05-14 | 1976-05-04 | International Telephone & Telegraph Corporation | Method of making a transducer |
CA1063254A (en) * | 1975-09-04 | 1979-09-25 | Shu-Yau Wu | Electrostatically bonded semiconductor-on-insulator mos device, and a method of making the same |
CA1078217A (en) * | 1976-03-31 | 1980-05-27 | Robert C. Whitehead (Jr.) | Force transducing cantilever beam and pressure transducer incorporating it |
US4203128A (en) * | 1976-11-08 | 1980-05-13 | Wisconsin Alumni Research Foundation | Electrostatically deformable thin silicon membranes |
US4083710A (en) * | 1977-01-21 | 1978-04-11 | Rca Corporation | Method of forming a metal pattern on an insulating substrate |
US4109063A (en) * | 1977-06-17 | 1978-08-22 | General Electric Company | Composite body |
US4197171A (en) * | 1977-06-17 | 1980-04-08 | General Electric Company | Solid electrolyte material composite body, and method of bonding |
US4142946A (en) * | 1977-06-17 | 1979-03-06 | General Electric Company | Method of bonding a metallic element to a solid ion-conductive electrolyte material element |
US4142945A (en) * | 1977-06-22 | 1979-03-06 | General Electric Company | Method of forming a composite body and method of bonding |
US4179324A (en) * | 1977-11-28 | 1979-12-18 | Spire Corporation | Process for fabricating thin film and glass sheet laminate |
DE2943231A1 (de) * | 1978-03-17 | 1980-12-11 | Hitachi Ltd | Semiconductor pressure sensors having a plurality of pressure-sensitive diaphragms and method of manufacturing the same |
JPS54131892A (en) * | 1978-04-05 | 1979-10-13 | Hitachi Ltd | Semiconductor pressure converter |
US4216477A (en) * | 1978-05-10 | 1980-08-05 | Hitachi, Ltd. | Nozzle head of an ink-jet printing apparatus with built-in fluid diodes |
JPS5516228A (en) * | 1978-07-21 | 1980-02-04 | Hitachi Ltd | Capacity type sensor |
JPS5543819A (en) * | 1978-09-22 | 1980-03-27 | Hitachi Ltd | Pressure detecting equipment |
JPS5544786A (en) * | 1978-09-27 | 1980-03-29 | Hitachi Ltd | Pressure sensor |
US4230256A (en) * | 1978-11-06 | 1980-10-28 | General Electric Company | Method of bonding a composite body to a metallic element |
DE2909985C3 (de) * | 1979-03-14 | 1981-10-22 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung eines Halbleiter-Glas-Verbundwerkstoffs und Verwendung eines solchen Verbundwerkstoffes |
US4234361A (en) * | 1979-07-05 | 1980-11-18 | Wisconsin Alumni Research Foundation | Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer |
US4294602A (en) * | 1979-08-09 | 1981-10-13 | The Boeing Company | Electro-optically assisted bonding |
US4386453A (en) * | 1979-09-04 | 1983-06-07 | Ford Motor Company | Method for manufacturing variable capacitance pressure transducers |
US4261086A (en) * | 1979-09-04 | 1981-04-14 | Ford Motor Company | Method for manufacturing variable capacitance pressure transducers |
US4306243A (en) * | 1979-09-21 | 1981-12-15 | Dataproducts Corporation | Ink jet head structure |
US4322980A (en) * | 1979-11-08 | 1982-04-06 | Hitachi, Ltd. | Semiconductor pressure sensor having plural pressure sensitive diaphragms and method |
NL8003696A (nl) * | 1980-06-26 | 1982-01-18 | Philips Nv | Werkwijze voor het vervaardigen van een elektrische ontladingsinrichting, welke een van een elektroden- patroon voorzien glazen substraat bevat en aldus ver- kregen elektrische ontladingsinrichting. |
GB2090710B (en) * | 1980-12-26 | 1984-10-03 | Matsushita Electric Ind Co Ltd | Thermistor heating device |
US4393105A (en) * | 1981-04-20 | 1983-07-12 | Spire Corporation | Method of fabricating a thermal pane window and product |
US4390925A (en) * | 1981-08-26 | 1983-06-28 | Leeds & Northrup Company | Multiple-cavity variable capacitance pressure transducer |
US4384899A (en) * | 1981-11-09 | 1983-05-24 | Motorola Inc. | Bonding method adaptable for manufacturing capacitive pressure sensing elements |
US4475790A (en) * | 1982-01-25 | 1984-10-09 | Spire Corporation | Fiber optic coupler |
FI65674C (fi) * | 1982-12-21 | 1984-06-11 | Vaisala Oy | Kapacitiv fuktighetsgivare och foerfarande foer framstaellningdaerav |
US4527428A (en) * | 1982-12-30 | 1985-07-09 | Hitachi, Ltd. | Semiconductor pressure transducer |
US4501060A (en) * | 1983-01-24 | 1985-02-26 | At&T Bell Laboratories | Dielectrically isolated semiconductor devices |
JPS6051700A (ja) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | シリコン結晶体の接合方法 |
JPS60131746A (ja) * | 1983-12-20 | 1985-07-13 | Hitachi Ltd | 荷電粒子線用加速管 |
US4543457A (en) * | 1984-01-25 | 1985-09-24 | Transensory Devices, Inc. | Microminiature force-sensitive switch |
US4525766A (en) * | 1984-01-25 | 1985-06-25 | Transensory Devices, Inc. | Method and apparatus for forming hermetically sealed electrical feedthrough conductors |
US4632871A (en) * | 1984-02-16 | 1986-12-30 | Varian Associates, Inc. | Anodic bonding method and apparatus for X-ray masks |
US4613891A (en) * | 1984-02-17 | 1986-09-23 | At&T Bell Laboratories | Packaging microminiature devices |
FI69211C (fi) * | 1984-02-21 | 1985-12-10 | Vaisala Oy | Kapacitiv styckgivare |
FI75426C (fi) * | 1984-10-11 | 1988-06-09 | Vaisala Oy | Absoluttryckgivare. |
US4625560A (en) * | 1985-05-13 | 1986-12-02 | The Scott & Fetzer Company | Capacitive digital integrated circuit pressure transducer |
US4741796A (en) * | 1985-05-29 | 1988-05-03 | Siemens Aktiengesellschaft | Method for positioning and bonding a solid body to a support base |
US4643532A (en) * | 1985-06-24 | 1987-02-17 | At&T Bell Laboratories | Field-assisted bonding method and articles produced thereby |
US4639631A (en) * | 1985-07-01 | 1987-01-27 | Motorola, Inc. | Electrostatically sealed piezoelectric device |
US4680243A (en) * | 1985-08-02 | 1987-07-14 | Micronix Corporation | Method for producing a mask for use in X-ray photolithography and resulting structure |
NL8600216A (nl) * | 1986-01-30 | 1987-08-17 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
DE3621331A1 (de) * | 1986-06-26 | 1988-01-14 | Fraunhofer Ges Forschung | Mikroventil |
US4773972A (en) * | 1986-10-30 | 1988-09-27 | Ford Motor Company | Method of making silicon capacitive pressure sensor with glass layer between silicon wafers |
CH671653A5 (pt) * | 1986-11-03 | 1989-09-15 | Landis & Gyr Ag | |
US4737756A (en) * | 1987-01-08 | 1988-04-12 | Imo Delaval Incorporated | Electrostatically bonded pressure transducers for corrosive fluids |
US4875750A (en) * | 1987-02-25 | 1989-10-24 | Siemens Aktiengesellschaft | Optoelectronic coupling element and method for its manufacture |
FI84401C (fi) * | 1987-05-08 | 1991-11-25 | Vaisala Oy | Kapacitiv tryckgivarkonstruktion. |
FI872049A (fi) * | 1987-05-08 | 1988-11-09 | Vaisala Oy | Kondensatorkonstruktion foer anvaendning vid tryckgivare. |
US5013396A (en) * | 1987-06-01 | 1991-05-07 | The Regents Of The University Of Michigan | Method of making an ultraminiature pressure sensor |
US5207103A (en) * | 1987-06-01 | 1993-05-04 | Wise Kensall D | Ultraminiature single-crystal sensor with movable member |
US4881410A (en) * | 1987-06-01 | 1989-11-21 | The Regents Of The University Of Michigan | Ultraminiature pressure sensor and method of making same |
JPS63304133A (ja) * | 1987-06-05 | 1988-12-12 | Hitachi Ltd | 混合ガスを用いる分析計 |
US4852408A (en) * | 1987-09-03 | 1989-08-01 | Scott Fetzer Company | Stop for integrated circuit diaphragm |
US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
JP2544435B2 (ja) * | 1988-04-06 | 1996-10-16 | 株式会社日立製作所 | 多機能センサ |
DE3943859B4 (de) * | 1988-06-08 | 2005-04-21 | Denso Corp., Kariya | Verfahren zur Herstellung eines Halbleiterdrucksensors |
US5017252A (en) * | 1988-12-06 | 1991-05-21 | Interpane Coatings, Inc. | Method for fabricating insulating glass assemblies |
US4996627A (en) * | 1989-01-30 | 1991-02-26 | Dresser Industries, Inc. | High sensitivity miniature pressure transducer |
DE3937529A1 (de) * | 1989-11-08 | 1991-05-16 | Siemens Ag | Verfahren zum verbinden eines siliziumteiles mit einem glasteil |
DE4101205A1 (de) * | 1990-02-09 | 1991-08-14 | Asea Brown Boveri | Gekuehltes hochleistungshalbleiterbauelement |
US5009690A (en) * | 1990-03-09 | 1991-04-23 | The United States Of America As Represented By The United States Department Of Energy | Method of bonding single crystal quartz by field-assisted bonding |
JP2527834B2 (ja) * | 1990-07-20 | 1996-08-28 | 三菱電機株式会社 | 陽極接合法 |
US6164759A (en) * | 1990-09-21 | 2000-12-26 | Seiko Epson Corporation | Method for producing an electrostatic actuator and an inkjet head using it |
DE4108304C2 (de) * | 1991-03-14 | 1995-04-06 | Fraunhofer Ges Forschung | Vorrichtung zum anodischen Bonden von Silizium-Wafern mit Tragekörpern |
JP2812405B2 (ja) * | 1991-03-15 | 1998-10-22 | 信越半導体株式会社 | 半導体基板の製造方法 |
ATE231287T1 (de) * | 1991-09-30 | 2003-02-15 | Canon Kk | Verfahren für anodische bindung mit lichtstrahlung |
DE4136075C3 (de) * | 1991-10-30 | 1999-05-20 | Siemens Ag | Verfahren zum Verbinden eines scheibenförmigen Isolierkörpers mit einem scheibenförmigen, leitfähigen Körper |
JPH05169666A (ja) * | 1991-12-25 | 1993-07-09 | Rohm Co Ltd | インクジェットプリントヘッドの製造方法 |
US5273827A (en) * | 1992-01-21 | 1993-12-28 | Corning Incorporated | Composite article and method |
DE4207951C2 (de) * | 1992-03-10 | 1995-08-31 | Mannesmann Ag | Kapazitiver Druck- oder Differenzdrucksensor in Glas-Silizium-Technik |
US5264820A (en) * | 1992-03-31 | 1993-11-23 | Eaton Corporation | Diaphragm mounting system for a pressure transducer |
DE4219132A1 (de) * | 1992-06-11 | 1993-12-16 | Suess Kg Karl | Verfahren zum Herstellen von Silizium/Glas- oder Silizium/Silizium-Verbindungen |
IL107120A (en) * | 1992-09-29 | 1997-09-30 | Boehringer Ingelheim Int | Atomising nozzle and filter and spray generating device |
US6007676A (en) * | 1992-09-29 | 1999-12-28 | Boehringer Ingelheim International Gmbh | Atomizing nozzle and filter and spray generating device |
JP3300060B2 (ja) * | 1992-10-22 | 2002-07-08 | キヤノン株式会社 | 加速度センサー及びその製造方法 |
JP3402635B2 (ja) * | 1992-12-08 | 2003-05-06 | キヤノン株式会社 | 微小流路素子 |
JPH06350376A (ja) * | 1993-01-25 | 1994-12-22 | Matsushita Electric Ind Co Ltd | 気密封止された圧電デバイスおよび気密封止パッケージ |
JP3188546B2 (ja) * | 1993-03-23 | 2001-07-16 | キヤノン株式会社 | 絶縁体と導電体との接合体並びに接合方法 |
DE4321804A1 (de) * | 1993-06-30 | 1995-01-12 | Ranco Inc | Verfahren zur Herstellung von Kleinbauelementen |
FI93059C (fi) * | 1993-07-07 | 1995-02-10 | Vaisala Oy | Kapasitiivinen paineanturirakenne ja menetelmä sen valmistamiseksi |
FI93579C (fi) * | 1993-08-20 | 1995-04-25 | Vaisala Oy | Sähköstaattisen voiman avulla takaisinkytketty kapasitiivinen anturi ja menetelmä sen aktiivisen elementin muodon ohjaamiseksi |
EP0651449B1 (en) * | 1993-11-01 | 2002-02-13 | Matsushita Electric Industrial Co., Ltd. | Electronic component and method for producing the same |
DE69409215T2 (de) * | 1993-12-06 | 1998-07-16 | Matsushita Electric Ind Co Ltd | Hybrid Magnetstruktur und deren Herstellungsverfahren |
EP0671372A3 (en) * | 1994-03-09 | 1996-07-10 | Seiko Epson Corp | Anodic bonding method and method of manufacturing an ink jet head using the bonding method. |
JPH07263991A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 導電性接着樹脂を用いた直列共振デバイスの製造方法 |
DE4423164A1 (de) * | 1994-07-04 | 1996-01-11 | Karl Suss Dresden Gmbh | Anordnung von Elektroden zum anodischen Bonden |
JP3383081B2 (ja) * | 1994-07-12 | 2003-03-04 | 三菱電機株式会社 | 陽極接合法を用いて製造した電子部品及び電子部品の製造方法 |
DE19525388B4 (de) * | 1994-07-12 | 2005-06-02 | Mitsubishi Denki K.K. | Elektronikbauteil mit anodisch gebondetem Leiterrahmen |
US5637458A (en) * | 1994-07-20 | 1997-06-10 | Sios, Inc. | Apparatus and method for the detection and assay of organic molecules |
US5479827A (en) * | 1994-10-07 | 1996-01-02 | Yamatake-Honeywell Co., Ltd. | Capacitive pressure sensor isolating electrodes from external environment |
DE4436561C1 (de) * | 1994-10-13 | 1996-03-14 | Deutsche Spezialglas Ag | Verfahren zur Veränderung der Durchbiegung von anodisch gebondeten flächigen Verbundkörpern aus Glas und Metall oder Halbleitermaterialien |
JPH08122359A (ja) * | 1994-10-21 | 1996-05-17 | Fuji Electric Co Ltd | 半導体加速度センサとその製造方法および試験方法 |
DE4446704C1 (de) * | 1994-12-12 | 1996-04-11 | Mannesmann Ag | Verfahren zum anodischen Bonden |
DE4446703C2 (de) * | 1994-12-12 | 1996-10-17 | Mannesmann Ag | Anordnung zum anodischen Bonden |
JP3319912B2 (ja) * | 1995-06-29 | 2002-09-03 | 株式会社デンソー | 半導体センサ用台座およびその加工方法 |
JP3206467B2 (ja) * | 1996-12-25 | 2001-09-10 | トヨタ自動車株式会社 | 太陽電池セルの冷却液封止構造 |
US6554671B1 (en) * | 1997-05-14 | 2003-04-29 | Micron Technology, Inc. | Method of anodically bonding elements for flat panel displays |
US5980349A (en) * | 1997-05-14 | 1999-11-09 | Micron Technology, Inc. | Anodically-bonded elements for flat panel displays |
DE19742439C1 (de) * | 1997-09-26 | 1998-10-22 | Boehringer Ingelheim Int | Mikrostrukturiertes Filter |
US6004179A (en) * | 1998-10-26 | 1999-12-21 | Micron Technology, Inc. | Methods of fabricating flat panel evacuated displays |
JP3961182B2 (ja) * | 1999-01-29 | 2007-08-22 | セイコーインスツル株式会社 | 陽極接合方法 |
US6525462B1 (en) | 1999-03-24 | 2003-02-25 | Micron Technology, Inc. | Conductive spacer for field emission displays and method |
US6550337B1 (en) | 2000-01-19 | 2003-04-22 | Measurement Specialties, Inc. | Isolation technique for pressure sensing structure |
IT1320381B1 (it) * | 2000-05-29 | 2003-11-26 | Olivetti Lexikon Spa | Metodo per la fabbricazione di una testina di eiezione di gocce diliquido particolarmente adatta per operare con liquidi chimicamente |
WO2002061800A2 (en) * | 2000-12-13 | 2002-08-08 | Rochester Institute Of Technology | A method and system for electrostatic bonding |
WO2002073673A1 (en) | 2001-03-13 | 2002-09-19 | Rochester Institute Of Technology | A micro-electro-mechanical switch and a method of using and making thereof |
US6660614B2 (en) | 2001-05-04 | 2003-12-09 | New Mexico Tech Research Foundation | Method for anodically bonding glass and semiconducting material together |
WO2002097865A2 (en) | 2001-05-31 | 2002-12-05 | Rochester Institute Of Technology | Fluidic valves, agitators, and pumps and methods thereof |
US7211923B2 (en) | 2001-10-26 | 2007-05-01 | Nth Tech Corporation | Rotational motion based, electrostatic power source and methods thereof |
US7378775B2 (en) | 2001-10-26 | 2008-05-27 | Nth Tech Corporation | Motion based, electrostatic power source and methods thereof |
JP2003229503A (ja) * | 2002-01-31 | 2003-08-15 | Nec Schott Components Corp | 気密端子及びその製造方法 |
KR100446624B1 (ko) * | 2002-02-27 | 2004-09-04 | 삼성전자주식회사 | 양극접합 구조체 및 그 제조방법 |
JP2003302299A (ja) * | 2002-04-10 | 2003-10-24 | Denso Corp | 力学量検出装置の製造方法 |
US6939778B2 (en) * | 2002-04-18 | 2005-09-06 | The Regents Of The University Of Michigan | Method of joining an insulator element to a substrate |
EP1362827B1 (en) * | 2002-05-16 | 2008-09-03 | Micronit Microfluidics B.V. | Method of fabrication of a microfluidic device |
US20070286773A1 (en) * | 2002-05-16 | 2007-12-13 | Micronit Microfluidics B.V. | Microfluidic Device |
US6724612B2 (en) | 2002-07-09 | 2004-04-20 | Honeywell International Inc. | Relative humidity sensor with integrated signal conditioning |
KR100480273B1 (ko) * | 2002-11-07 | 2005-04-07 | 삼성전자주식회사 | 실리콘-유리 양극 접합 기술을 이용한 광섬유 블록의 제조방법 |
JP2004190977A (ja) * | 2002-12-12 | 2004-07-08 | Sony Corp | 熱輸送装置、熱輸送装置の製造方法及び電子デバイス |
US7217582B2 (en) | 2003-08-29 | 2007-05-15 | Rochester Institute Of Technology | Method for non-damaging charge injection and a system thereof |
US7287328B2 (en) | 2003-08-29 | 2007-10-30 | Rochester Institute Of Technology | Methods for distributed electrode injection |
US8529724B2 (en) * | 2003-10-01 | 2013-09-10 | The Charles Stark Draper Laboratory, Inc. | Anodic bonding of silicon carbide to glass |
US8581308B2 (en) | 2004-02-19 | 2013-11-12 | Rochester Institute Of Technology | High temperature embedded charge devices and methods thereof |
WO2005090227A1 (en) * | 2004-03-23 | 2005-09-29 | Casio Computer Co., Ltd. | Stack structure and method of manufacturing the same |
US7115182B2 (en) * | 2004-06-15 | 2006-10-03 | Agency For Science, Technology And Research | Anodic bonding process for ceramics |
US20060269847A1 (en) * | 2005-05-25 | 2006-11-30 | International Business Machines Corporaton | Binding of hard pellicle structure to mask blank and method |
JP2007281062A (ja) * | 2006-04-04 | 2007-10-25 | Hitachi Ltd | 電子部品接合体、それを用いた電子回路モジュールおよびその製造方法 |
US20070249098A1 (en) * | 2006-04-21 | 2007-10-25 | Raymond Charles Cady | Bonding plate mechanism for use in anodic bonding |
CN102699516B (zh) * | 2007-02-28 | 2015-03-18 | 沃特世科技公司 | 具有扩散结合的钛构件的液相色谱装置 |
EP2023121A1 (en) * | 2007-07-06 | 2009-02-11 | Bp Oil International Limited | Optical cell |
US8402831B2 (en) * | 2009-03-05 | 2013-03-26 | The Board Of Trustees Of The Leland Standford Junior University | Monolithic integrated CMUTs fabricated by low-temperature wafer bonding |
JP2011049324A (ja) * | 2009-08-26 | 2011-03-10 | Seiko Instruments Inc | 陽極接合方法、及び圧電振動子の製造方法 |
US9873939B2 (en) * | 2011-09-19 | 2018-01-23 | The Regents Of The University Of Michigan | Microfluidic device and method using double anodic bonding |
US20130199831A1 (en) * | 2012-02-06 | 2013-08-08 | Christopher Morris | Electromagnetic field assisted self-assembly with formation of electrical contacts |
US8895362B2 (en) | 2012-02-29 | 2014-11-25 | Corning Incorporated | Methods for bonding material layers to one another and resultant apparatus |
US9220852B2 (en) | 2012-04-10 | 2015-12-29 | Boehringer Ingelheim Microparts Gmbh | Method for producing trench-like depressions in the surface of a wafer |
US9154138B2 (en) | 2013-10-11 | 2015-10-06 | Palo Alto Research Center Incorporated | Stressed substrates for transient electronic systems |
EP3142791A1 (en) | 2014-05-14 | 2017-03-22 | University of Limerick | Method for testing compounds on living cells |
EP3218922B1 (en) | 2014-11-14 | 2023-06-07 | Danmarks Tekniske Universitet | A system for extracting and analyising including a device for extracting volatile species from a liquid |
US9780044B2 (en) | 2015-04-23 | 2017-10-03 | Palo Alto Research Center Incorporated | Transient electronic device with ion-exchanged glass treated interposer |
CH711295B1 (fr) | 2015-07-06 | 2019-11-29 | Cartier Int Ag | Procédé de fixation par assemblage anodique. |
WO2017006219A1 (fr) * | 2015-07-06 | 2017-01-12 | Cartier International Ag | Procédé de fixation par assemblage anodique |
US9577047B2 (en) | 2015-07-10 | 2017-02-21 | Palo Alto Research Center Incorporated | Integration of semiconductor epilayers on non-native substrates |
US10012250B2 (en) | 2016-04-06 | 2018-07-03 | Palo Alto Research Center Incorporated | Stress-engineered frangible structures |
US10224297B2 (en) | 2016-07-26 | 2019-03-05 | Palo Alto Research Center Incorporated | Sensor and heater for stimulus-initiated fracture of a substrate |
US10026579B2 (en) | 2016-07-26 | 2018-07-17 | Palo Alto Research Center Incorporated | Self-limiting electrical triggering for initiating fracture of frangible glass |
DE102016116499B4 (de) * | 2016-09-02 | 2022-06-15 | Infineon Technologies Ag | Verfahren zum Bilden von Halbleiterbauelementen und Halbleiterbauelemente |
US10903173B2 (en) | 2016-10-20 | 2021-01-26 | Palo Alto Research Center Incorporated | Pre-conditioned substrate |
US10026651B1 (en) | 2017-06-21 | 2018-07-17 | Palo Alto Research Center Incorporated | Singulation of ion-exchanged substrates |
IT201700103511A1 (it) * | 2017-09-15 | 2019-03-15 | St Microelectronics Srl | Dispositivo microelettronico dotato di connessioni protette e relativo processo di fabbricazione |
US10626048B2 (en) | 2017-12-18 | 2020-04-21 | Palo Alto Research Center Incorporated | Dissolvable sealant for masking glass in high temperature ion exchange baths |
US10717669B2 (en) | 2018-05-16 | 2020-07-21 | Palo Alto Research Center Incorporated | Apparatus and method for creating crack initiation sites in a self-fracturing frangible member |
US11107645B2 (en) | 2018-11-29 | 2021-08-31 | Palo Alto Research Center Incorporated | Functionality change based on stress-engineered components |
US10947150B2 (en) | 2018-12-03 | 2021-03-16 | Palo Alto Research Center Incorporated | Decoy security based on stress-engineered substrates |
US10969205B2 (en) | 2019-05-03 | 2021-04-06 | Palo Alto Research Center Incorporated | Electrically-activated pressure vessels for fracturing frangible structures |
US11904986B2 (en) | 2020-12-21 | 2024-02-20 | Xerox Corporation | Mechanical triggers and triggering methods for self-destructing frangible structures and sealed vessels |
US12013043B2 (en) | 2020-12-21 | 2024-06-18 | Xerox Corporation | Triggerable mechanisms and fragment containment arrangements for self-destructing frangible structures and sealed vessels |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2567877A (en) * | 1947-07-11 | 1951-09-11 | Ment Jack De | Electrochemical bonding of aluminum with other materials |
US3256598A (en) * | 1963-07-25 | 1966-06-21 | Martin Marietta Corp | Diffusion bonding |
-
1966
- 1966-04-22 GB GB17792/66A patent/GB1138401A/en not_active Expired
- 1966-04-25 SE SE05597/66A patent/SE351518B/xx unknown
- 1966-04-28 IL IL25656A patent/IL25656A/en unknown
- 1966-05-04 DE DE19661665042 patent/DE1665042A1/de active Pending
- 1966-05-04 BE BE680529D patent/BE680529A/xx not_active IP Right Cessation
- 1966-05-05 CH CH652066A patent/CH451273A/de unknown
- 1966-05-05 DK DK231466AA patent/DK127988B/da unknown
- 1966-05-05 NO NO162890A patent/NO119844B/no unknown
- 1966-05-06 NL NL666606217A patent/NL153720B/xx not_active IP Right Cessation
- 1966-05-06 JP JP2835566A patent/JPS5328747B1/ja active Pending
- 1966-05-06 BR BR179299/66A patent/BR6679299D0/pt unknown
- 1966-05-06 FR FR60520A patent/FR1478918A/fr not_active Expired
- 1966-10-03 US US583907A patent/US3397278A/en not_active Expired - Lifetime
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Publication number | Publication date |
---|---|
BE680529A (pt) | 1966-11-04 |
GB1138401A (en) | 1969-01-01 |
NL6606217A (pt) | 1966-11-07 |
SE351518B (pt) | 1972-11-27 |
US3397278A (en) | 1968-08-13 |
CH451273A (de) | 1968-05-15 |
NL153720B (nl) | 1977-06-15 |
DK127988B (da) | 1974-02-11 |
DE1665042A1 (de) | 1970-10-08 |
FR1478918A (fr) | 1967-04-28 |
JPS5328747B1 (pt) | 1978-08-16 |
IL25656A (en) | 1970-09-17 |
BR6679299D0 (pt) | 1973-08-09 |
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