NL133499C - - Google Patents

Info

Publication number
NL133499C
NL133499C NL133499DA NL133499C NL 133499 C NL133499 C NL 133499C NL 133499D A NL133499D A NL 133499DA NL 133499 C NL133499 C NL 133499C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL133499C publication Critical patent/NL133499C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30608Anisotropic liquid etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
NL133499D 1960-05-18 NL133499C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2736960 1960-05-18

Publications (1)

Publication Number Publication Date
NL133499C true NL133499C (de)

Family

ID=12219118

Family Applications (2)

Application Number Title Priority Date Filing Date
NL133499D NL133499C (de) 1960-05-18
NL265468D NL265468A (de) 1960-05-18

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL265468D NL265468A (de) 1960-05-18

Country Status (4)

Country Link
US (1) US3250693A (de)
DE (2) DE1261965B (de)
GB (1) GB932976A (de)
NL (2) NL265468A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377263A (en) * 1964-09-14 1968-04-09 Philco Ford Corp Electrical system for etching a tunnel diode
US3408275A (en) * 1966-12-09 1968-10-29 Siemens Ag Tunnel diodes wherein the height of the reduced cross section of the mesa is minimized and process of making
US3697873A (en) * 1969-05-28 1972-10-10 Westinghouse Electric Corp Method for determining excess carrier lifetime in semiconductor devices
JPS4828958B1 (de) * 1969-07-22 1973-09-06
US4028207A (en) * 1975-05-16 1977-06-07 The Post Office Measuring arrangements
US4462871A (en) * 1982-04-06 1984-07-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Epitaxial thinning process

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2505370A (en) * 1947-11-08 1950-04-25 Bell Telephone Labor Inc Piezoelectric crystal unit
US2886496A (en) * 1950-03-29 1959-05-12 Leeds & Northrup Co Method of determining concentration of dissolved substance
US2765765A (en) * 1952-09-03 1956-10-09 Robert R Bigler Apparatus for the manufacture of piezoelectric crystals
GB761795A (en) * 1954-03-09 1956-11-21 Gen Electric Co Ltd Improvements in or relating to the manufacture of semi-conductor devices
US3023153A (en) * 1954-06-01 1962-02-27 Rca Corp Method of etching semi-conductor bodies
US2940024A (en) * 1954-06-01 1960-06-07 Rca Corp Semi-conductor rectifiers
US2850444A (en) * 1954-11-01 1958-09-02 Rca Corp Pulse method of etching semiconductor junction devices
US3075902A (en) * 1956-03-30 1963-01-29 Philco Corp Jet-electrolytic etching and measuring method
NL210117A (de) * 1956-08-24
US2979444A (en) * 1957-07-16 1961-04-11 Philco Corp Electrochemical method and apparatus therefor
US2975342A (en) * 1957-08-16 1961-03-14 Research Corp Narrow base planar junction punch-thru diode
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
US2963411A (en) * 1957-12-24 1960-12-06 Ibm Process for removing shorts from p-n junctions
US3117899A (en) * 1960-07-18 1964-01-14 Westinghouse Electric Corp Process for making semiconductor devices
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device

Also Published As

Publication number Publication date
NL265468A (de)
GB932976A (en) 1963-07-31
DE1261965C2 (de) 1973-11-22
US3250693A (en) 1966-05-10
DE1261965B (de) 1968-02-29

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