KR20060065305A - Photo mask and method for emi filter thereby - Google Patents

Abstract

A photo mask and a method of manufacturing an electromagnetic wave shielding filter using the same are provided. The photomask is connected to the edge portion and the edge portion on the transparent substrate, the plurality of first rows arranged at regular intervals across the opposite surface of the edge portion, and arranged at regular intervals intersecting the plurality of first rows. And a light shield having a mesh-like center pattern composed of a plurality of second rows. In addition, a method of manufacturing an electromagnetic wave shielding filter using the same may include forming a photoresist film on a conductive substrate, exposing and developing a photoresist film using a photomask according to the present invention, and forming a photoresist pattern, and the photoresist. Performing metal plating on the conductive substrate exposed by the pattern to form a mesh metal layer.

Photo mask, electromagnetic shielding filter, plasma display device

Description

Photo mask and manufacturing method of electromagnetic shielding filter using the same {Photo mask and method for EMI filter hence}

1 is a plan view of a conventional mesh type electromagnetic shielding filter.

2A is a plan view of a photo mask 20 according to an embodiment of the present invention, and FIG. 2B is a plan view of a photo mask 30 according to another embodiment of the present invention.

3 is a flowchart illustrating a method of manufacturing an electromagnetic wave shielding filter according to an embodiment of the present invention.

4 is a process perspective view for describing each process step of FIG. 3.

<Explanation of symbols for the main parts of the drawings>

200: transparent substrate 210: light shield

400: conductive substrate 410: photoresist film

410 ': photoresist pattern 420: plated metal film

The present invention relates to a photo mask and a method for manufacturing an electromagnetic wave shielding filter using the same, and in particular, a photo mask capable of simultaneously forming an edge pattern used as an electrode and a mesh pattern used for shielding electromagnetic waves, and an electromagnetic wave using the photo mask. A method for producing a shielding filter.

A plasma display is an apparatus for displaying an image by using a gas discharge phenomenon, and is excellent in various display capabilities such as display capacity, brightness, contrast, afterimage, viewing angle, and so on, and can replace cathode ray tubes. Is getting into the spotlight as a display device.

In the plasma display device, a discharge is generated in a gas filled between electrodes by a direct current or an alternating voltage applied to the electrode, and the device is configured to display an image by exciting the phosphor by the radiation of ultraviolet rays. to be.

In a plasma display device, a high voltage is required for plasma discharge, which generates an electromagnetic wave that is harmful to a human body.

The main frequency range of these electromagnetic waves is 30-200 MHz, and an electromagnetic wave shielding filter is needed for a plasma display device in order to block such electromagnetic waves.

The electromagnetic wave shielding filter is disposed in front of the plasma display device when the user sees it, and thus, a transparent conductive thin film or a conductive mesh is mainly used because it must maintain high transmittance and low reflectance characteristics.

1 is a plan view of a conventional mesh type electromagnetic wave shielding filter 10.

As shown in FIG. 1, the conventional mesh type electromagnetic wave shielding filter 10 includes a mesh type center pattern 110 surrounded by an edge pattern 100 having a predetermined line width.

The electromagnetic wave shielding filter 10 first forms a mesh-shaped center pattern 110 through a photo lithography process using a mesh-type photo mask, and then meshes the edge pattern 100 using plating or the like. It is manufactured by a method of forming a connection with the pattern 110.

However, when the mesh center pattern 110 and the edge pattern 100 are separately formed in this manner, it is difficult to maintain the constantness of the thickness, and the manufacturing process may be complicated, which may cause an increase in the manufacturing cost. It is required to develop a manufacturing method of an electromagnetic shielding filter capable of simultaneously manufacturing the center pattern 110 and the edge pattern 100 to eliminate the difference in thickness and simplify the manufacturing process.

An object of the present invention is to provide a photo mask capable of simultaneously patterning a linear edge pattern and a mesh-shaped center pattern in an electromagnetic wave shielding filter.

Another object of the present invention is to provide a method for manufacturing an electromagnetic wave shielding filter using the photo mask.

Technical problems to be achieved by the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

Photomask according to an embodiment of the present invention for solving the above technical problem is a plurality of substrates that are connected to the edge portion and the edge portion on the transparent substrate, the transparent substrate, and arranged at regular intervals across the opposite surface of the edge portion And a light shielding portion having a mesh-like center pattern composed of a first row and a plurality of second rows arranged at regular intervals to intersect the plurality of first rows.

The photomask according to another embodiment of the present invention for solving the above technical problem is formed of a transparent substrate, a material for shielding light on the transparent substrate and the center pattern and the squares are repeatedly arranged spaced apart from each other in two dimensions And a light shield having a border pattern surrounding the center pattern.

According to another aspect of the present invention, there is provided a method of manufacturing an electromagnetic wave shielding filter, the method including forming a photoresist film on a conductive substrate and using the photomasks according to an embodiment of the present invention. Exposing and developing the film to form a photoresist pattern, and performing metal plating to form a mesh metal layer on the conductive substrate exposed by the photoresist pattern.

Specific details of other embodiments are included in the detailed description and the accompanying drawings.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the technical field to which the present invention belongs. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

2A is a perspective view of a photo mask 20 according to an embodiment of the present invention, and FIG. 2B is a perspective view of a photo mask 30 according to another embodiment of the present invention.

As shown in FIGS. 2A and 2B, the photo masks 20 and 30 according to the exemplary embodiments may include the transparent substrate 200 and the light shielding portion 210.

The transparent substrate 200 preferably uses a quartz glass substrate as an area through which light (UV, X-ray) passes.

The light shielding portion 210 is formed on the transparent substrate 200 to be in contact with the transparent substrate 200.

The light shielding portion 210 is a region through which light does not pass and includes a center pattern and an edge pattern.

In the center pattern, a mesh type pattern is formed in the photo mask 20 of FIG. 2A, and in the photo mask 30 of FIG. 2B, quadrangles are spaced two-dimensionally from each other and are repeatedly arranged.

The border pattern is formed to surround the center pattern. However, in the mesh-shaped center pattern of the photo mask 20 of FIG. 2A, the border pattern connects and surrounds the center pattern.                     

The line width of the edge pattern may be 10-20 mm, and the line width of the mesh-shaped center pattern may be 5-50 μm.

As the light blocking material used for the light shielding portion 210, it is preferable to use one of chromium (Cr), iron oxide (Fe _x O _y ), and silicon (Si).

The center pattern of the light shielding portion 210 is a pattern for forming a mesh type shielding portion in the manufacturing process of the electromagnetic wave shielding filter, and the photomask 20 of FIG. 2A has a negative photoresist in which light-receiving portions are cured. The photo mask 30 of FIG. 2B is used for each of the positive photoresist in which the portion to which light is softened is softened.

The edge pattern is a pattern for forming an electrode for flowing the current generated by the electromagnetic wave to the outside in the mesh shield.

3 is a flowchart illustrating a method of manufacturing an electromagnetic wave shielding filter according to an embodiment of the present invention.

4 is a process perspective view for describing each process step of FIG. 3.

In order to manufacture the electromagnetic wave shielding filter according to the exemplary embodiment of the present invention, first, as shown in FIG. 4A, a photoresist film 410 is formed on the conductive substrate 400 (S300).

The conductive substrate 400 is later used as a lower electrode in the plating process. The conductive substrate 400 is used in laminating a plate shape plated with copper (Cu) or stainless steel (SUS 304 or SUS 430) on a transparent glass substrate. By using an adhesive.

At this time, the thickness of the conductive substrate 400 may be 100 ~ 200㎛.

The photoresist film 410 is made of a mixture having a characteristic of changing its internal structure when exposed to various forms of energy such as light or radiant heat, and is positive depending on whether or not the area irradiated with light is developed. And negative photoresist.

The photoresist film 410 is composed of a polymer, a sensitizer, a solvent, and an additive.

A polymer is an organic solid material that acts as a solid mask in an etching or ion implantation process in the form of C _x H _y , and a photosensitive agent reacts with light during an exposure process to perform a photo-chemical reaction. To modify the structure of the polymer.

An additive means something like a dye for controlling a photochemical reaction.

As a requirement of the photoresist film 410, first, it should be possible to obtain a very precise pattern shape after the development process with a high resolution (resolu-tion). In general, the thinner the photoresist film 410 is applied, the higher the resolution. Second, it must have high etch resistance. Usually, the thicker the photoresist film is, the higher the etching resistance is, but the first requirement is that the resolution is inferior.

Thirdly, the characteristics of the photoresist film 410 that are required are high adhesion. That is, the formed photoresist film should be in close contact with each other without being separated from the substrate surface.

Next, as shown in FIG. 4B, the photoresist film 410 is exposed and developed using the photomask 20 of the present invention described above to form the photoresist pattern 410 ′. (S310).

At this time, when the formed photoresist film 410 is positive, organic bonds are broken at portions exposed to light during exposure, and are removed during the development process by the developer. On the contrary, when the formed photoresist film 410 is negative, organic bonds are newly formed in the structure of the region to which light is irradiated, thereby removing portions not exposed to light during the developing process.

In the present invention, a negative photoresist film 410 is used for the photomask 20 having the mesh-shaped center pattern of FIG. 2A, and photoresist of a region irradiated with light using a developer solution of 2.38% of TMM (TetraMethyl Ammonium Hydroxide) The membrane 410 was stripped off.

Next, as shown in FIG. 4C, metal plating is performed to fill the empty space between the photoresist patterns 410 ′ to form the metal film 420 (S320).

The void space between the photoresist patterns 410 'refers to the conductive substrate exposed by the photoresist pattern 410', and the metal that can be used for metal plating is one of Cu, Ag, Au, Pt, and Ni. It is preferable to carry out, and the metal plating thickness is 0.5-5.0 micrometers.

Before performing metal plating, however, a seed layer is formed using one of Ni, Cr, InO, CrO, SnO, AgO, CoO, HgO, IrO, CrS, PdS, NiS, CoS, TaS, and TiS. It may further comprise the step of.

Finally, as shown in FIG. 4D, the mesh-type thin metal film wrapped by the edge pattern is removed by removing the photoresist pattern 410 ′ and peeling the plated metal film 420 from the conductive substrate 400. To complete (S330).

The photoresist pattern 410 'is removed by dipping by diluting 50% KOH in pure water. In general, the photoresist pattern 410 'may be removed in about 3 minutes, and after the removal may be further performed to remove the KOH component remaining on the substrate surface.

The plated metal film 420 adheres a polymer resin plate such as PET (PolyEthylene Terephthalate) having an adhesive applied to the surface of the plated metal film 420, and then removes the polymer resin by physical force. The plated metal film 420 may be separated from the conductive substrate 400 by the adhesive force of the plated metal film 420.

In the present invention, a negative photoresist film is used for the photomask 20 having the mesh-shaped center pattern of FIG. 2A. However, the same purpose is achieved by using a photomask 30 and a positive photoresist film according to another embodiment of the present invention. It will be apparent to those skilled in the art that this can be achieved.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments, but may be manufactured in various forms, and having ordinary skill in the art to which the present invention pertains. It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without changing the technical spirit or essential features of the present invention. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

As described above, according to the method of manufacturing the photo mask and the electromagnetic wave shielding filter using the same according to the present invention, there are one or two or more of the following effects.

First, it is possible to simultaneously form a mesh-shaped center pattern and a linear border pattern, the thickness can also be kept the same, thereby preventing deterioration of the electromagnetic wave shielding filter.

Second, the process efficiency of the electromagnetic wave shielding filter can be simplified.

Claims (8)

Transparent substrates; A plurality of first rows which are connected to an edge portion and the edge portion on the transparent substrate and are arranged at regular intervals across the opposing surfaces of the edge portion, and a plurality of which are arranged at regular intervals intersecting the plurality of first rows. A photomask comprising a light shield having a mesh-shaped center pattern composed of two second rows. Transparent substrates; And a light shield having a center pattern in which squares formed of a material for shielding light on the transparent substrate are spaced apart two-dimensionally from each other and a border pattern surrounding the center pattern. The method according to claim 1 or 2, The transparent substrate is a quartz glass substrate. The method according to claim 1 or 2, The light shielding material is one of chromium, iron oxide, and silicon. (a) forming a photoresist film on the conductive substrate; (b) exposing and developing the photoresist film using the photo mask according to claim 1 to form a photoresist pattern; And (c) forming a mesh metal layer by performing metal plating on the conductive substrate exposed by the photoresist pattern. (a) forming a photoresist film on the conductive substrate; (b) exposing and developing the photoresist film using the photo mask according to claim 2 to form a photoresist pattern; And (c) forming a mesh metal layer by performing metal plating on the conductive substrate exposed by the photoresist pattern. The method according to claim 5 or 6, The said transparent substrate is a manufacturing method of the electromagnetic wave shielding filter which is a quartz glass substrate. The method according to claim 5 or 6, The light shielding material is one of chromium, iron oxide, and silicon.

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