KR102603255B1 - Semiconductor device - Google Patents

Abstract

Examples include a substrate; A first conductivity type semiconductor layer disposed on the substrate, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and the second conductivity type semiconductor layer. A semiconductor structure including a semiconductor layer and a recess penetrating the active layer; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first pad disposed on the first electrode; a plurality of second pads spaced apart from each other on the second electrode; and an insulating layer disposed on the first electrode and the second electrode, wherein the second conductive semiconductor layer includes a body portion extending in a first direction; and a branch portion extending from the main body in a second direction perpendicular to the first direction, wherein the insulating layer includes a first hole disposed on the branch portion, and the second pad includes the first hole. 1 A semiconductor device is electrically connected to the second electrode through a hole, and the length of the main body portion in the second direction is greater than the length of the branch portion in the first direction.

Description

Semiconductor device {SEMICONDUCTOR DEVICE}

The embodiment relates to a semiconductor device.

Semiconductor devices containing compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in a variety of ways, such as light emitting devices, light receiving devices, and various diodes.

In particular, light-emitting devices such as light emitting diodes and laser diodes using group 3-5 or group 2-6 compound semiconductor materials have been developed into red, green, and green colors through the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet rays can be realized, and efficient white light can also be realized by using fluorescent materials or combining colors. Compared to existing light sources such as fluorescent lights and incandescent lights, it has low power consumption, semi-permanent lifespan, and fast response speed. , has the advantages of safety and environmental friendliness.

In addition, when light-receiving devices such as photodetectors or solar cells are manufactured using group 3-5 or group 2-6 compound semiconductor materials, the development of device materials absorbs light in various wavelength ranges to generate photocurrent. By doing so, light of various wavelengths, from gamma rays to radio wavelengths, can be used. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy control of device materials, so it can be easily used in power control, ultra-high frequency circuits, or communication modules.

Therefore, semiconductor devices can replace the transmission module of optical communication means, the light emitting diode backlight that replaces the cold cathode fluorescence lamp (CCFL) that constitutes the backlight of LCD (Liquid Crystal Display) display devices, and fluorescent lamps or incandescent bulbs. Applications are expanding to include white light-emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

In particular, light-emitting devices that emit light in the ultraviolet wavelength range have a curing or sterilizing effect and can be used for curing, medical purposes, and sterilization.

Recently, research on ultraviolet light-emitting devices has been active, but it is still difficult to implement ultraviolet light-emitting devices with flip chips.

The embodiment provides a flip chip type semiconductor device.

In addition, a semiconductor device with improved electrical characteristics is provided by increasing the ohmic contact area.

Additionally, a semiconductor device with improved optical output due to an increase in electrode length is provided.

The problem to be solved in the embodiment is not limited to this, and also includes purposes and effects that can be understood from the means of solving the problem or the embodiment described below.

A semiconductor device according to an embodiment includes a substrate; A first conductivity type semiconductor layer disposed on the substrate, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and the second conductivity type semiconductor layer. A semiconductor structure including a semiconductor layer and a recess penetrating the active layer; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first pad disposed on the first electrode; a plurality of second pads spaced apart from each other on the second electrode; and an insulating layer disposed on the first electrode and the second electrode, wherein the second conductive semiconductor layer includes a body portion extending in a first direction; and a branch portion extending from the main body in a second direction perpendicular to the first direction, wherein the insulating layer includes a first hole disposed on the branch portion, and the second pad includes the first hole. 1 It is electrically connected to the second electrode through a hole, and the length of the main body portion in the second direction may be greater than the length of the branch portion in the first direction.

The first direction is a 1-1 direction; and a 1-2 direction opposite to the 1-1 direction, wherein the branch portion includes a first sub-branch extending in the 1-1 direction or a second sub-branch extending in the 1-2 direction. It may further include ;.

The branch portions may be plural, and the first sub-branches may be arranged side by side in the second direction in the plurality of branch portions.

The branch portions may be plural, and the second sub-branches may be arranged side by side in a second direction in the plurality of branch portions.

The first sub-branches and the second sub-branches may be arranged to intersect in the second direction.

The first hole is a 1-1 hole disposed on the first sub branch; and a 1-2 hole disposed on the second sub branch, wherein the 1-1 hole may not overlap with the 1-2 hole in the second direction.

The length of the first hole in the first direction may be smaller than the length in the second direction.

According to the embodiment, the semiconductor device may be implemented in a flip chip form.

In addition, semiconductor devices with excellent electrical characteristics such as current spreading can be manufactured.

Additionally, semiconductor devices with improved optical output can be manufactured.

The various and beneficial advantages and effects of the present invention are not limited to the above-described content, and may be more easily understood through description of specific embodiments of the present invention.

1 is a plan view of a semiconductor device according to an embodiment;
Figure 2 is a cross-sectional view taken along line AA' in Figure 1;
Figure 3 is a cross-sectional view taken along line BB' in Figure 1;
Figure 4 is a cross-sectional view taken along line CC' in Figure 1;
5 is a plan view showing a semiconductor device to a semiconductor structure according to an embodiment;
Figure 6 is a cross-sectional view taken along line DD' in Figure 5;
7 is a plan view of a semiconductor device according to another embodiment;
8 is a plan view of a semiconductor device according to another embodiment;
Figure 9 is an enlarged view of portion K in Figure 8.
10A and 10B are plan and cross-sectional views showing a semiconductor structure by etching;
11A and 11B are plan and cross-sectional views of a first insulating layer formed on a semiconductor structure;
Figures 12a and 12b are plan and cross-sectional views showing the first ohmic electrode formed;
Figures 13a and 13b are plan and cross-sectional views showing the second ohmic electrode formed;
14A and 14B are a plan view and a cross-sectional view showing the first electrode, the second electrode, and the second insulating layer;
15A and 15B are a plan view and a cross-sectional view showing the first pad and the second pad.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

However, the technical idea of the present invention is not limited to some of the described embodiments, but may be implemented in various different forms, and as long as it is within the scope of the technical idea of the present invention, one or more of the components may be optionally used between the embodiments. It can be used by combining and replacing.

In addition, terms (including technical and scientific terms) used in the embodiments of the present invention, unless explicitly specifically defined and described, are generally understood by those skilled in the art to which the present invention pertains. It can be interpreted as meaning, and the meaning of commonly used terms, such as terms defined in a dictionary, can be interpreted by considering the contextual meaning of the related technology.

Additionally, the terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention.

In this specification, the singular may also include the plural unless specifically stated in the phrase, and when described as "at least one (or more than one) of A and B and C", it is combined with A, B, and C. It can contain one or more of all possible combinations.

Additionally, when describing the components of an embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used.

These terms are only used to distinguish the component from other components, and are not limited to the essence, sequence, or order of the component.

And, when a component is described as being 'connected', 'coupled' or 'connected' to another component, the component is not only directly connected, coupled or connected to that other component, but also is connected to that component. It can also include cases where other components are 'connected', 'combined', or 'connected' due to another component between them.

Additionally, when described as being formed or disposed "above" or "below" each component, "above" or "below" refers not only to cases where two components are in direct contact with each other, but also to one This also includes cases where another component described above is formed or placed between two components. In addition, when expressed as "top (above) or bottom (bottom)", it may include not only the upward direction but also the downward direction based on one component.

FIG. 1 is a plan view of a semiconductor device according to an embodiment, FIG. 2 is a cross-sectional view taken along AA′ in FIG. 1, FIG. 3 is a cross-sectional view taken along BB′ in FIG. 1, and FIG. 4 is a cross-sectional view taken along CC′ in FIG. 1. This is a cut cross-sectional view.

1 to 4, a semiconductor device according to an embodiment of the present invention includes a substrate 110, a semiconductor structure 120 disposed on the substrate 110, and a first device disposed on the semiconductor structure 120. 1 insulating layer 171, a first ohmic electrode 151 disposed on the first conductive semiconductor layer 121, a second ohmic electrode 161 disposed on the second conductive semiconductor layer 123, 1 The first electrode 152 disposed on the ohmic electrode 151, the second electrode 162 disposed on the second ohmic electrode 161, and the first electrode 152 and the second electrode 162. It may include a second insulating layer 172 disposed in, a first pad 153 electrically connected to the first electrode 152, and a second pad 163 electrically connected to the second electrode 162. there is.

First, the semiconductor structure 120 according to an embodiment of the present invention can output light in the ultraviolet wavelength range. For example, the semiconductor structure 120 may output light in the near-ultraviolet wavelength range (UV-A), light in the far-ultraviolet wavelength range (UV-B), or light in the deep ultraviolet wavelength range (UV- C) can be output. The wavelength range may be determined by the Al composition ratio of the semiconductor structure 120.

For example, light in the near-ultraviolet wavelength band (UV-A) may have a wavelength band ranging from 320 nm to 420 nm as the center wavelength, and light in the far-ultraviolet wavelength band (UV-B) may have a wavelength band ranging from 280 nm to 320 nm as the center wavelength. It can have a wavelength, and light in the deep ultraviolet wavelength range (UV-C) can have a wavelength range in the range of 100 nm to 280 nm as its central wavelength.

Specifically, the substrate 110 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. For example, the substrate 110 may be a light-transmitting substrate that allows light in the ultraviolet wavelength range to pass through.

The buffer layer 111 can alleviate lattice mismatch between the substrate 110 and the semiconductor layers. The buffer layer 111 may be a combination of group III and group V elements or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. In this embodiment, the buffer layer 111 may be AlN, but is not limited thereto. The buffer layer 111 may include a dopant, but is not limited thereto.

The first conductive semiconductor layer 121 may be implemented as a compound semiconductor such as group III-V or group II-VI, and may be doped with a first dopant. The first conductive semiconductor layer 121 has a composition formula of In _x1 Al _y1 Ga _{1 -x1-y1} N (0=x1≤=1, 0<y1≤=1, 0≤=x1+y1≤=1) It may be selected from semiconductor materials such as AlGaN, AlN, InAlGaN, etc. And, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 121 doped with the first dopant may be an n-type semiconductor layer.

The active layer 122 may be disposed between the first conductive semiconductor layer 121 and the second conductive semiconductor layer 123. The active layer 122 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 121 and holes (or electrons) injected through the second conductive semiconductor layer 123 meet. The active layer 122 transitions to a low energy level as electrons and holes recombine, and can generate light having an ultraviolet wavelength.

The active layer 122 may have any one of a single well structure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the active layer 122 The structure is not limited to this.

The active layer 122 may include a plurality of well layers (not shown) and a barrier layer (not shown). The well layer and the barrier layer may have the composition formula In _x2 Al _y2 Ga _{1 -x2- y2} N (0=x2≤=1, 0<y2≤=1, 0≤=x2+y2≤=1). The aluminum composition of the well layer may vary depending on the wavelength of light emission.

The second conductive semiconductor layer 123 is formed on the active layer 122 and may be implemented with a compound semiconductor such as group III-V or group II-VI. Dopants may be doped.

The second conductive semiconductor layer 123 has a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0=x5≤=1, 0<y2≤=1, 0≤=x5+y2≤=1) It may be formed of a semiconductor material or a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, Ba, etc., the second conductive semiconductor layer 123 doped with the second dopant may be a p-type semiconductor layer.

And the semiconductor structure 120 may include a recess penetrating the second conductive semiconductor layer 123 and the active layer 122. The recess may be disposed up to a partial area of the first conductive semiconductor layer 121.

The first insulating layer 171 may be disposed between the first ohmic electrode 151 and the second ohmic electrode 161. Additionally, a portion of the first insulating layer 171 may be disposed within the recess. And the first insulating layer 171 may include a first hole 171a where the first ohmic electrode 151 is disposed and a second hole 171b where the second ohmic electrode 161 is disposed.

The first ohmic electrode 151 may be disposed on the first conductive semiconductor layer 121, and the second ohmic electrode 161 may be disposed on the second conductive semiconductor layer 123.

The first ohmic electrode 151 and the second ohmic electrode 161 are made of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium (IGZO). zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In -Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, It may be formed including at least one of In, Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials. Illustratively, the first ohmic electrode 151 may have a plurality of metal layers (eg, Cr/Al/Ni), and the second ohmic electrode 161 may be ITO.

The first electrode 152 may be disposed on the first ohmic electrode 151 and cover the first ohmic electrode 151. That is, the first electrode 152 may cover the side surface of the first ohmic electrode 151, but is not limited to this configuration.

Additionally, the first electrode 152 may be electrically connected to the first ohmic electrode 151 through the first hole 171a to form an electrical channel with the first conductive semiconductor layer 121. And the first electrode 152 may extend to the top of the first insulating layer 171. Accordingly, the first electrode 152 may be partially located on the first insulating layer 171. Due to this configuration, the total area of the first electrode 152 increases, so the operating voltage of the semiconductor device according to the embodiment can be lowered.

The second electrode 162 may be disposed on the second ohmic electrode 161 and cover the second ohmic electrode 161. Additionally, the second electrode 162 may cover the side surface of the second ohmic electrode 161, but is not necessarily limited to this.

And the second electrode 162 may be electrically connected to the second electrode 162 through the second hole 171b. Accordingly, the second electrode 162 may form an electrical channel with the second ohmic electrode 161 and the second conductive semiconductor layer 123. And as an example, the second electrode 162 may be disposed only on the top of the second ohmic electrode 161.

The first electrode 152 and the second electrode 162 are Ni/Al/Au, or Ni/IrOx/Au, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg , Zn, Pt, Au, and Hf, but is not particularly limited. However, the outermost layer of the first electrode 152 and the second electrode 162 that is exposed to the outside may include gold (Au). Gold (Au) prevents corrosion of electrodes and improves electrical conductivity to facilitate electrical connection with the pad.

The second insulating layer 172 may be disposed on the first electrode 152, the second electrode 162, and the first insulating layer 171. The second insulating layer 172 may include a third hole 172a exposing the first electrode 152 and a fourth hole 172b exposing the second electrode 162. The third hole 172a and the fourth hole 172b may be spaced apart from each other.

The first insulating layer 171 and the second insulating layer 172 are formed by at least one selected from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, etc. It can be. In addition, the first insulating layer 171 and the second insulating layer 172 are partially formed at the boundary between the first insulating layer 171 and the second insulating layer 172 during the process of forming the second insulating layer 172. may be removed and exist as a whole.

Additionally, the first pad 153 may be disposed on the first electrode 152 and electrically connected to the first electrode 152. And the second pad 163 may be disposed on the second electrode 162 and electrically connected to the second electrode 162. At this time, the first pad 153 and the second pad 163 may be eutectic bonded, but this is not necessarily limited.

Additionally, the first pad 153 and the second pad 163 may be arranged to face each other on the semiconductor structure 120 . In an embodiment, the first pad 153 may be spaced apart from the second pad 163 in a second direction (Y-axis direction) on a plane. In this specification, the first direction (X-axis direction) is a direction perpendicular to the second direction (Y-axis direction), and the third direction (Z-axis direction) is perpendicular to both the first and second directions and the semiconductor structure 120 ) may be the same as the stacking direction of the first conductive semiconductor layer 121, the active layer 122, and the second conductive semiconductor layer 123.

In addition, the first pad 153 is electrically connected to the first electrode 152 through the third hole 172a of the second insulating layer 172, and the second pad 163 is connected to the second insulating layer 172. ) can be electrically connected to the second electrode 162 through the fourth hole 162a. The third hole 172a may be a single hole formed along the shape of the first electrode 152, and the fourth hole 162a may be plural, and the number of these holes may vary.

Additionally, the first pad 153 may be placed on one side above the third hole 172a, and the second pad 163 may be placed on the other side above the fourth hole 172b. Additionally, the first pad 153 and the second pad 163 may be spaced apart on the semiconductor structure 120 and electrically separated.

FIG. 5 is a plan view showing a semiconductor device to a semiconductor structure according to an embodiment, and FIG. 6 is a cross-sectional view taken along line DD' in FIG. 5.

Referring to FIGS. 5 and 6 , the semiconductor structure 120 may include a light-emitting portion (M1) protruding by etching and a non-emission portion (M2) in which the first conductivity type semiconductor layer 121 is exposed by etching. there is. The light emitting part M1 may include an active layer 122 and a second conductive semiconductor layer 123. And the non-emission part M2 may include a first conductivity type semiconductor layer 121.

At this time, the ratio (P11/P12) between the maximum perimeter (P11) of the light emitting part (M1) and the maximum area (P12) of the light emitting part (P12) may be 0.05 [1/um] or more and 0.10 [1/um] or less. Here, the maximum circumference and maximum area of the light emitting unit M1 may be the maximum circumference and area of the second conductive semiconductor layer (or active layer). Hereinafter, the light-emitting portion (M1) will be described based on the second conductive semiconductor layer, and the non-emitting portion (M2) will be described based on the first conductive semiconductor layer 121.

When the ratio (P11/P12) is 0.05 or more, the perimeter of the second conductive semiconductor layer becomes longer compared to the area, thereby improving light output. As an example, the probability that light can be emitted from the side increases, thereby improving light output. In addition, when the ratio (P11/P12) is 0.10 or less, the problem of the light output being reduced due to the perimeter of the second conductive semiconductor layer becoming too long compared to the area can be prevented.

In other words, if the perimeter of the second conductive semiconductor layer is excessively long within the same area, the very thin (length in the first direction) second conductive semiconductor layer 123 may be continuously disposed. However, in this case, The second ohmic electrode disposed on the conductive semiconductor layer 123 may also become very thin and have high resistance. Accordingly, the operating voltage may increase. Additionally, if the perimeter of the second conductive semiconductor layer 123 becomes very small within the same area, the area of the outer surface may decrease and the light output may decrease.

Accordingly, the second conductive semiconductor layer 123 is formed in the first body portion 123a extending in the first direction (X-axis direction) and the second body portion 123a in the first body portion 123a to have an appropriate ratio of perimeter and area. It may include a first branch 123b extending in a direction (Y-axis direction). Additionally, a plurality of first branch portions 123b may be arranged to be spaced apart from each other in the first direction (X-axis direction). Additionally, the plurality of first branch parts 123b may be connected to the first main body part 123a at one end. However, as described above, the light emitting portion M1 may be interpreted as having a first main body portion and a first branch portion.

More specifically, the first body portion 123a may be disposed adjacent to one side of the first conductive semiconductor layer 123. And the first body portion 123a may be arranged to extend in the first direction (X-axis direction). At this time, the direction in which the first body portion 123a extends is described as the direction in which the length is greater among the length in the first direction and the length in the second direction. That is, in the embodiment, the length La of the first body 123a in the first direction (X-axis direction) is greater than the length L1 in the second direction (Y-axis direction), so the first body 123a ) may extend in the first direction. The explanation for this may be equally applied to the branch parts below.

In addition, the first body portion 123a has a first outer surface 123a-1 and a second outer surface 123a-2 disposed parallel to the first direction (X-axis direction), and a second outer surface 123a-2 disposed parallel to the first direction (X-axis direction). direction) and may include a third outer surface 123a-3 and a fourth outer surface 123a-4 arranged in parallel. At this time, as described above, the first outer surface 123a-1 and the second outer surface 123a-2 have a length L1 in the first direction (X-axis direction) of the third outer surface 123a-3. and may be greater than the length La in the second direction (Y-axis direction) of the fourth outer surface 123a-4. And the first outer surface (123a-1) and the second outer surface (123a-2) are positioned to face each other, and the third outer surface (123a-3) and the fourth outer surface (123a-4) are positioned to face each other. can do. The description will be made excluding the length in the third direction (Z-axis direction), which is the stacking direction of the semiconductor structure.

The first branch portion 123b may be arranged to extend in the second direction (Y-axis direction) on the second outer surface 123a-2 of the first body portion 123a. In other words, as described above, the length Lb of the first branch 123b in the second direction (Y-axis direction) may be greater than the length L2 in the first direction (X-axis direction). Additionally, each first branch 123b may be arranged to be spaced apart in the first direction (X-axis direction) on one outer surface (e.g., second outer surface 123a-2) of the first main body 123a. there is. In addition, the first branch portion 123b may be formed integrally with the first body portion 123a and there may be no boundary surface at a portion in contact with the first body portion 123a.

In addition, the first branch portion 123b is positioned to face the fifth outer surface 123b-1, which is in contact with the first main body portion 123a, and the fifth outer surface 123b-1 in the first direction (X-axis direction). It may include a sixth outer surface 123b-2 parallel to . And the first branch 123b has a seventh outer surface 123b-3 and an eighth outer surface 123b-4 disposed between the fifth outer surface 123b-1 and the sixth outer surface 123b-2. ) may include.

The fifth outer surface 123b-1 is in contact with a portion of the second outer surface 123a-2 and may be disposed parallel to the first direction (X-axis direction), and the seventh outer surface 123-3 and the eighth outer surface 123b-4 face each other and may be partially arranged parallel to the second direction (Y-axis direction).

In addition, as will be described later, in another embodiment of the present invention, the seventh outer surface 123b-3 and the eighth outer surface 123b-4 may further include sub-branches extending in the first direction (X-axis direction). You can. However, in various embodiments of the present specification, the length Lb in the second direction (Y-axis direction) of the seventh outer surface 123b-3 and the eighth outer surface 123b-4 is greater than the fifth outer surface 123b-4. 1) and the sixth outer surface 123b-2 may be maintained larger than the length L2 in the first direction (X-axis direction). At this time, the second direction (Y-axis direction) of the first body portion 123a The length L1 in the first direction (X-axis direction) of the first branch 123b may be greater than the length L2 in the first direction (X-axis direction). Accordingly, even if the plurality of first branch portions 123b and the first body portion 123a become thinner due to an increase in the circumference of the second conductive semiconductor layer 123, the first body portion 123a is the first body portion (123a). The plurality of first branches 123b connected to 123a) can be easily supported. Accordingly, the reliability of the semiconductor structure according to the embodiment may be improved.

In addition, the length L2 in the first direction (X-axis direction) of the first branch portion 123b has a length ratio of 1 with the length L1 in the second direction (Y-axis direction) of the first body portion 123a. :1.1 to 1:2.6.

When the length ratio is 1:1.1 or more, the first main body easily supports the first branch part, and the second ohmic electrode and the second electrode on the first main body of the second conductive semiconductor layer also serve as a support, improving reliability. It can be. And when the length ratio is 1:2.6 or less, light output can be improved by improving the perimeter of the second conductivity type semiconductor layer.

Additionally, the exposed first conductive semiconductor layer 121 may have a shape that surrounds the second conductive semiconductor layer 123 in the plane (XY), as described above.

Specifically, the exposed first conductive semiconductor layer 121 includes a second body portion 121a extending in the first direction (X-axis direction) and a second branch portion extending in the second direction (Y-axis direction) ( 121b) may be included. A plurality of second body portions 121a may be located on both sides in the second direction (Y-axis direction). That is, the second body portion 121a may be positioned to surround the first body portion 123a and the first branch portion 123b on the plane (XY).

And the second branch 121b may be located between the first branch 123b. Alternatively, each of the plurality of first branches 123b may be located between the plurality of second branches 121b. By this configuration, the current injected through the first electrode disposed on the exposed first conductive semiconductor layer 121 can be uniformly distributed.

The length L3 of the second body 121a in the second direction (Y-axis direction) may be smaller than the length L1 of the first body 123a in the second direction (Y-axis direction). The length ratio (L3:L1) of the length of the second body 121a in the second direction and the length of the first body 123a in the second direction may be 1:3 to 1:5. If the length ratio is 1:3 or more, the area of the second electrode can be increased to improve hole injection efficiency, and if the width ratio is 1:5 or less, the area of the second body portion 121a can be secured and electron injection efficiency can be improved. there is.

In addition, the second branch 121b is disposed between adjacent first branches 123b, and the length L4 in the first direction of the second branch 121b is the second branch of the first branch 123b. It may be smaller than the length (L2) in one direction. A length ratio between the length L4 in the first direction of the second branch 121b and the length L2 in the first direction of the first branch 123b may be 1:2 to 1:4. When the length ratio is 1:2 or more, the area of the second electrode increases and hole injection efficiency can be improved. And when the length ratio is 1:4 or less, the area of the first electrode can be secured and electron injection efficiency can be improved.

Additionally, the area of the second conductive semiconductor layer 123 may be larger than the exposed area of the first conductive semiconductor layer 121. The area (R1) of the second conductive semiconductor layer 123 may have an area ratio of 1:0.5 to 1:0.8 with the area (R2) of the exposed first conductive semiconductor layer. If the area ratio is 1:0.5 or more, the area of the first electrode can be secured to improve electron injection efficiency, and the first electrode can be arranged to surround the second electrode. Accordingly, current dissipation efficiency can also be improved. And when the area ratio is 1:0.8 or less, the area of the second electrode can be secured, hole injection efficiency can be improved, and light output can be improved.

Additionally, the first body portion 123a may be positioned to overlap the second pad 163 in the third direction (Z-axis direction). That is, the first body portion 123a may be located below the second pad 163.

Additionally, a portion of the first branch 123b may be located below each of the first pad 153 and the second pad 163. In other words, the end 123b-1 of the first branch 123b may be located below the first pad. In contrast, the end 121b-1 of the second branch 121b may be located below the second pad 163.

And the first pad 153 includes a first side 153b and a second side 153a parallel to the first direction, and the second pad 163 is parallel to the first direction and has a second side 153a. It may include a third side 163a close to and a fourth side 163b parallel to the third side 163a.

At this time, the distance L5 in the second direction from the end 121b-1 of the second branch 121b to the fourth side 163b of the second pad 163 is the end of the first branch 123b ( It may be longer than the distance L6 in the second direction from 123b-1) to the first side 153b of the first pad 153. Accordingly, the overlapping area of the first branch 123b and the first pad 153 may be larger than the overlapping area of the second branch 121b and the second pad 163.

Accordingly, by making the overlapping area of the first branch 123b and the first pad 153 larger than the overlapping area of the second branch 121b and the second pad 163, the second pad ( It is possible to prevent the problem that the second insulating layer 172 located between 163) and the second branch 121b is weakened by moisture between the second pad 163 and the second branch 121b, thereby reducing reliability. there is.

Additionally, the exposed first conductive semiconductor layer 121 may be arranged to surround the second conductive semiconductor layer 123 on a plane (XY plane). And a first electrode may be disposed on the exposed first conductive semiconductor layer 121. The first electrode may have a shape corresponding to the shape of the exposed first conductive semiconductor layer 121. And since the first electrode corresponds to the shape of the exposed first conductive semiconductor layer 121 and the second electrode corresponds to the shape of the second conductive semiconductor layer 123, the first electrode corresponds to the shape of the second conductive semiconductor layer 123 on the plane. It may be arranged to surround the electrode.

Additionally, according to the embodiment, the fourth hole 172b may be positioned to overlap the first body portion 123a and the first branch portion 123b in the third direction (Z-axis direction).

More specifically, in the embodiment, the fourth hole 172b is a main body hole 172b-1 disposed on the first body portion 123a and a branch hole 172b-2 disposed on the first branch portion 123b. ) may include. At this time, the body hole 172b-1 may overlap the first body portion 123a in the third direction, and the branch hole 172b-2 may overlap the first branch portion 123b in the third direction. .

Accordingly, the fourth hole 172b is disposed on both the first body portion 123a and the first branch portion 123b, so that the perimeter compared to the area of the second conductive semiconductor layer 123 is within the above-mentioned range. By doing so, reliability and optical output can be improved.

In addition, the main body hole 172b-1 and the branch hole 172b-2 are located entirely on one side of the semiconductor structure 120 along the first main body 123a and the first branch 123b. Current spreading can occur smoothly to the first body portion 123a and the first branch portion 123b through the two electrodes 162.

In addition, when the second conductive semiconductor layer 123 is made of, for example, AlGaN (however, it is not limited to this material), the second ohmic electrode 161 contacts the second conductive semiconductor layer 123. If you do so, a large amount of heat may be generated due to high resistance. At this time, peeling of the second ohmic electrode 161 may occur due to the generated heat, but according to the embodiment, the first branch portion 123b has a length in the second direction (Y-axis direction) of the first body portion 123a. By making it larger than the length in the first direction (X-axis direction), it is possible to evenly distribute the above-mentioned heat, thereby preventing peeling and improving reliability. Furthermore, the fourth hole 172b is formed in the upper part of the semiconductor structure 120. It may be disposed closer to the first body portion 123a. In other words, the fourth hole 172b may be centrally disposed on one side of the second conductive semiconductor layer 123 where the first branch portion 123b and the first body portion 123a are in contact. In addition, the above-mentioned heat may be generated more significantly in the area where a large number of the fourth holes 172b are arranged, and peeling of the electrode may occur. However, as in the embodiment, the second direction (Y-axis direction) of the first body portion 123a Since the length is greater than the length of the first branch 123b in the first direction (X-axis direction), the heat distribution can be more evenly distributed and the peeling phenomenon can be more effectively suppressed.

Additionally, the length of the first branch portion 123b in the first direction (X-axis direction) may increase as the distance from the first main body portion 123a increases. In other words, the length of the first branch 123b in the first direction (X-axis direction) may gradually increase toward the second direction (Y-axis direction). Due to this configuration, the width of the second branch portion 121b may decrease in the first direction (X-axis direction) as it moves away from the second main body portion 121a. Due to this configuration, hole injection into the second conductive semiconductor layer 123 can occur smoothly not only on one side of the first branch portion 123b contacting the first body portion 123a but also on the other side opposite to the first branch portion 123b.

In addition, a plurality of branch holes 172b-2 may be located on the first branch 123b. In particular, a plurality of branch holes 172b-2 may be positioned to overlap in the second direction on one first branch 123b. With this configuration, the current injected into the first branch 123b through the branch hole 172b-2 is spread uniformly, so that the light output of the semiconductor device can be improved.

Additionally, the plurality of branch holes 172b-2 may be arranged to overlap in the first direction on the plurality of first branch parts 123b and the first body part 123a. That is, the plurality of branch holes 172b-2 may be arranged side by side on the plurality of first branch parts 123b and the first body part 123a. As a result, in the semiconductor device according to the embodiment, the first injected current through the branch hole 172b-2 is spread uniformly to the branch portion 123b and the first body portion 123a, thereby improving the optical output of the semiconductor device. It can be.

Additionally, at least one of the plurality of body holes 172b-1 may overlap the branch hole 172b-2 on the first branch 123b in the second direction. Accordingly, in the semiconductor device according to the embodiment, the body hole 172b-1 is disposed in the first body portion 123a to correspond to the branch hole 172b-2 located on each first branch portion 123b. Current spreading can be further improved.

Additionally, the area of the first pad 153 may be larger than the area of the second pad 163. In an embodiment, the length of the first pad 153 in the first direction (X-axis direction) may be greater than the maximum length of the plurality of second branches 121b in the first direction (X-axis direction). Accordingly, each of the second branches 121b may overlap the first pad 153 at least partially in the third direction. And with this configuration, electron injection from the first pad 153 to the second branch 121b can be easily performed.

Additionally, the length of the second pad 163 in the first direction (X-axis direction) may be greater than the length of the plurality of first branches 123b in the first direction (X-axis direction). Additionally, the length of the second pad 163 in the first direction (X-axis direction) may be greater than the length of the first body portion 123a in the first direction (X-axis direction). That is, each of the second branches 123b may overlap at least partially with the second pad 163 in the third direction (Z-axis direction). Accordingly, hole injection from the second pad 163 to the first branch 123b can be easily performed.

Additionally, the length of the second pad 163 in the first direction (X-axis direction) may be smaller than the maximum length in the first direction (X-axis direction) of the plurality of second branches 121b. That is, the second branch 121b located outermost in the first direction (X-axis direction) may not overlap the second pad 163 in the third direction (Z-axis direction). As a result, the overlap area between the second pad 163 and the second branch 121b is reduced in the third direction (Z-axis direction), thereby reducing the reliability according to the opposite polarity between the second pad 163 and the second branch 121b. Deterioration can be prevented.

Additionally, as a modified example, the second pad 163 may have a shape corresponding to the shape of the second conductive semiconductor layer 123. For example, the second pad 163 includes a body pad (not shown) located on the first body portion 123a of the second conductive semiconductor layer 123 and a branch located on the first branch portion 123b. It may include a pad (not shown). Accordingly, the second pad 163 may not overlap the second branch 121b, the first ohmic electrode, and the first electrode in the third direction. Accordingly, the second branch 121b, the first ohmic electrode, and the first electrode can easily prevent reliability degradation due to the second pad 163.

7 is a plan view of a semiconductor device according to another embodiment.

Referring to FIG. 7 , the semiconductor device according to another embodiment may have a shape of the fourth hole 172b that is different from the semiconductor device according to the above-described embodiment.

Specifically, the width (Wa) of the fourth hole 172b in the first direction (X-axis direction) may be smaller than the width (Wb) in the second direction (Y-axis direction). Accordingly, the fourth hole 172b may have a shape that extends further in the second direction (Y-axis direction) than in the first direction (X-axis direction).

With this configuration, the current injected from the semiconductor device into the second conductivity type semiconductor layer through the fourth hole 172b can be efficiently spread in the second direction (Y-axis direction). In addition, a plurality of first branches 123b are arranged in parallel in the first direction (X-axis direction) and each first branch 123b has a fourth hole 172b, thereby forming a plurality of first branches 123b in the first direction (X-axis direction). ), current spreading can be performed smoothly. Additionally, the semiconductor device according to the embodiment can efficiently spread current over the entire area.

Additionally, the semiconductor device according to another embodiment may have a larger number of first branches 123b in the same area compared to the semiconductor device according to the above-described embodiment.

In other words, as the width of the fourth hole 127b increases in the second direction compared to the first direction, the length of the first branch 123b may correspondingly decrease in the first direction (X-axis direction). As a result, the semiconductor device according to another embodiment can improve light output by increasing the perimeter of the second conductivity type semiconductor layer. In addition, even if the second electrode becomes thinner as the circumference increases, current spreading can be improved and smooth current spreading can be maintained.

In addition, as described above, according to the embodiment, the fourth hole 172b may be positioned to overlap the first body portion 123a and the first branch portion 123b in the third direction (Z-axis direction). .

Additionally, the fourth hole 172b may include a main body hole 172b-1 disposed on the first body portion 123a and a branch hole 172b-2 disposed on the first branch portion 123b. there is.

In addition, a plurality of branch holes 172b-2 may be located on the first branch 123b. In particular, a plurality of branch holes 172b-2 may be arranged to overlap in the second direction on one first branch 123b. By this configuration, the current injected into the first branch 123b through the branch hole 172b-2 is spread uniformly in the semiconductor structure, so that the light output of the semiconductor device can be improved.

Additionally, the plurality of branch holes 172b-2 may be arranged to overlap in the first direction on the plurality of first branch parts 123b and the first body part 123a. That is, the plurality of branch holes 172b-2 may be arranged side by side on the plurality of first branch parts 123b and the first body part 123a. As a result, in the semiconductor device according to the embodiment, the current injected into the first branch portion 123b and the first body portion 123a through the branch hole 172b-2 is spread uniformly, thereby improving the optical output of the semiconductor device. It can be.

Additionally, at least one of the plurality of body holes 172b-1 may overlap the branch hole 172b-2 on the first branch 123b in the second direction. Accordingly, in the semiconductor device according to the embodiment, the body hole 172b-1 is disposed in the first body portion 123a to correspond to the branch hole 172b-2 located on each first branch portion 123b. Current spreading can be further improved.

And the semiconductor device according to another embodiment has a configuration other than the shape of the fourth hole 172b and the first branch 123b (a substrate, a semiconductor structure disposed on the substrate, and a first insulator disposed on the semiconductor structure). layer, a first ohmic electrode disposed on the first conductivity type semiconductor layer, a second ohmic electrode disposed on the second conductivity type semiconductor layer, a first electrode disposed on the first ohmic electrode, and a first ohmic electrode disposed on the second ohmic electrode. It further includes a second electrode disposed, a second insulating layer disposed on the first electrode and the second electrode, a first pad electrically connected to the first electrode, and a second pad electrically connected to the second electrode. can do. In addition, the contents described above may be equally applied to the configuration other than the shape of the above-described fourth hole 172b and the first branch portion 123b.

FIG. 8 is a plan view of a semiconductor device according to another embodiment, and FIG. 9 is an enlarged view of portion K in FIG. 8.

Referring to FIGS. 8 and 9 , in a semiconductor device according to another embodiment, the first branch may further include a plurality of sub-branches.

Specifically, in a semiconductor device according to another embodiment, the second conductive semiconductor layer 123 may include a first body portion 123a and a first branch portion 123b as described above. Additionally, the first body portion 123a may extend in a first direction, and the first branch portion 123b may extend in a second direction.

As described above, the first body portion 123a may be disposed adjacent to one side of the first conductivity type semiconductor layer 123. And the first body portion 123a may be arranged to extend in the first direction (X-axis direction). That is, in the embodiment, the length of the first body 123a in the first direction (X-axis direction) may be greater than the length in the second direction (Y-axis direction).

Additionally, the first branch portion 123b may be arranged to extend in the second direction (Y-axis direction) on the second outer surface of the first main body portion 123a. In other words, the length of the first branch 123b in the second direction (Y-axis direction) may be greater than the length in the first direction (X-axis direction). Additionally, each first branch 123b may be arranged to be spaced apart in the first direction (X-axis direction) on one outer surface (eg, second outer surface) of the first main body 123a.

Specifically, the first branch portion 123b includes a fifth outer surface in contact with the first main body portion 123a, a sixth outer surface located facing the fifth outer surface and parallel to the first direction (X-axis direction). can do. And the first branch 123b may include a seventh outer surface and an eighth outer surface disposed between the fifth outer surface and the sixth outer surface. The explanation for this may be the same as the above. And the fifth outer surface is in contact with a part of the second outer surface, so it can be arranged parallel to the first direction (X-axis direction), and the seventh outer surface and the eighth outer surface face each other and some of them are in the second direction. It can be arranged parallel to (Y-axis direction).

At this time, the first branch 123b includes a first sub-branch 123bb and a 1-2 branch extending in the 1-1 direction (X1 axis direction) to the first body branch 123ba extending in the second direction. It may further include a second sub-branch 123bc extending in the direction (X2-axis direction). Here, the first direction (X-axis direction) includes the 1-1 direction (X1-axis direction) and the 1-2 direction (X2-axis direction), and the 1-1 direction (X1-axis direction) includes the 1-1 direction (X1-axis direction). It is opposite to direction 2 (X2 axis direction). And the second direction (Y-axis direction) includes the 2-1 direction (Y1-axis direction) and the 2-2 direction (Y2-axis direction), and the 2-1 direction (Y1-axis direction) includes the 2-2 direction. It is opposite to the direction (Y2 axis direction).

In addition, even if the first branch 123b further includes a first body branch 123ba, a first sub-branch 123bb, and a second sub-branch 123bc, the first direction of the first branch 123b ( The length in the X-axis direction) may be smaller than the length in the second direction (Y-axis direction).

And one end of the first sub branch 123bb may be connected to the first main branch 123ba. Additionally, there may be a plurality of first sub-branches 123bb. That is, one first body branch 123a may be connected to a plurality of first sub branches 123bb. Additionally, the plurality of first sub-branches 123bb may be spaced apart in the second direction and overlap in the second direction.

Additionally, the first sub branch 123bb may be connected to each of the plurality of first body branches 123ba. The plurality of first sub-branches 123bb may be arranged side by side in the second direction on the plurality of first branch portions 123b. That is, the plurality of first sub-branches 123bb may be arranged to overlap in the second direction on the plurality of first branch portions 123b.

And a fourth hole 172b may be disposed on the first sub branch 123bb. Accordingly, a plurality of fourth holes 172b may be arranged side by side in one first branch 123b in the second direction. That is, the plurality of fourth holes 172b may be arranged to overlap in the second direction in one first branch 123b.

On the other hand, the plurality of fourth holes 172b may be arranged side by side in the first direction in the plurality of first branches 123b (first sub-branches). That is, the plurality of fourth holes 172b may be arranged to overlap in the first direction in the plurality of first branches 123b. With this configuration, the circumference of the second conductive semiconductor layer can be increased to increase light output, and smooth current spreading can also be provided through the fourth hole 172b.

Likewise, one end of the second sub branch 123bc may be connected to the first main branch 123ba. Additionally, there may be a plurality of second sub branches 123bc. That is, one first body branch 123a may be connected to a plurality of second sub branches 123bc. Additionally, the plurality of second sub-branches 123bc may be spaced apart in the second direction and overlap in the second direction.

Additionally, the second sub branch 123bc may be connected to each of the plurality of first body branches 123ba. These plurality of second sub-branches 123bc may be arranged side by side in the second direction on the plurality of first branches 123b. That is, the plurality of second sub-branches 123bc may be arranged to overlap in the second direction on the plurality of first branch portions 123b.

And a fourth hole 172b may be disposed on the second sub branch 123bc. Accordingly, a plurality of fourth holes 172b may be arranged side by side in one first branch 123b in the second direction. That is, the plurality of fourth holes 172b may be arranged to overlap in the second direction in one first branch 123b.

On the other hand, the plurality of fourth holes 172b may be arranged side by side in the first direction in the plurality of first branches 123b (first sub-branches). That is, the plurality of fourth holes 172b may be arranged to overlap in the first direction in the plurality of first branches 123b. With this configuration, the circumference of the second conductive semiconductor layer can be increased to increase light output, and smooth current spreading can also be provided through the fourth hole 172b.

At this time, the fourth hole 172b may include a 4-1 hole 172ba and a 4-2 hole 172bb disposed on the first sub branch 123bb. At this time, the 4-1 hole 172ba and the 4-2 hole 172bb are spaced apart and may not be arranged to overlap in the first direction and the second direction.

With this configuration, the area of the first ohmic electrode or the first electrode can be increased while increasing the perimeter of the second conductive semiconductor layer. Accordingly, electrical characteristics can be improved by lowering the operating voltage while increasing optical output.

In addition, the second sub-branch 123bc and the first sub-branch 123bb may be connected to the same first main body branch 123ba. At this time, the first sub branch 123bb and the second sub branch 123bc may be arranged to be spaced apart from each other in the second direction. For example, the first sub-branches 123bb and the second sub-branches 123bc may be arranged to intersect in the second direction.

In other words, in a semiconductor device according to another embodiment, the first branch 123b may include at least one of the first sub-branch 123bb and the second sub-branch 123bc. For example, the first branch 123b may include only the first sub-branch 123bb or only the second sub-branch 123bc.

Additionally, the 4-1 hole 172ba may have a first center Ca, and the first center Ca may overlap in the second direction in one first branch 123b. Here, the first center (Ca) of the 4-1 hole (172ba) may be the center of a circle if the 4-1 hole (172ba) is a circle, and the 4-1 hole (172ba) may have a shape other than a circle. If it has it, it may be the center of gravity.

Additionally, the 4-2 hole 172bb may have a second center Cb, and the second center Cb may overlap in one first branch 123b in the second direction. Here, the second center (Ca) of the 4-1 hole (172ba) may be the center of a circle if the 4-1 hole (172ba) is a circle, and the 4-1 hole (172ba) may have a shape other than a circle. If it has it, it may be the center of gravity.

Additionally, the first center Ca and the second center Cb may not overlap in the second direction in one first branch 123b.

However, the first centers Ca of the plurality of first branches 123b may overlap each other in the first direction. For example, the first virtual line V1 connecting the plurality of first centers Ca spaced apart in the first direction may be parallel to the first direction.

Additionally, the second centers Cb of the plurality of first branches 123b may overlap each other in the first direction. For example, the second virtual line V2 connecting the plurality of second centers Cb spaced apart in the first direction may be parallel to the first direction.

And the first virtual line (V1) and the second virtual line (V2) are parallel to each other and may be spaced apart in the second direction. With this configuration, hole injection can be performed uniformly through the 4-1 hole 172ba and the 4-2 hole 172bb.

In addition, the semiconductor device according to another embodiment has other configurations (a substrate, a semiconductor structure disposed on the substrate, and a first insulator disposed on the semiconductor structure) in addition to the fourth hole 172b and the first branch 123b described above. layer, a first ohmic electrode disposed on the first conductivity type semiconductor layer, a second ohmic electrode disposed on the second conductivity type semiconductor layer, a first electrode disposed on the first ohmic electrode, and a first ohmic electrode disposed on the second ohmic electrode. It further includes a second electrode disposed, a second insulating layer disposed on the first electrode and the second electrode, a first pad electrically connected to the first electrode, and a second pad electrically connected to the second electrode. can do. In addition, the contents described above may be equally applied to the configuration other than the shape of the above-described fourth hole 172b and the first branch portion 123b.

Figures 10a and 10b are plan and cross-sectional views showing a semiconductor structure by etching.

10A and 10B, a semiconductor structure including a buffer layer 111, a first conductive semiconductor layer 121, an active layer 122, and a second conductive semiconductor layer 123 on a substrate 110. (120) can be placed.

According to the embodiment, as described above, the semiconductor structure 120 includes a non-emission portion (M2) in which the first conductive semiconductor layer 121 is exposed by etching and a light emitting portion (M1) protruding from the non-emission portion (M2). It can be included. The light emitting part M1 may include an active layer 122 and a second conductive semiconductor layer 123.

The second conductive semiconductor layer 123 of the light emitting portion (M1) is aligned with the first body portion extending in the first direction (X-axis direction) and the second direction (Y-axis direction) to have an appropriate ratio of perimeter and area. It may include a plurality of extended first branches.

11A and 11B are a plan view and a cross-sectional view of a first insulating layer formed on a semiconductor structure.

Referring to FIGS. 11A and 11B , a first insulating layer 171 may be formed on the semiconductor structure 120 and a first hole 171a and a second hole 171b may be formed. The first insulating layer 171 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, etc.

FIGS. 12A and 12B are a plan view and a cross-sectional view showing the first ohmic electrode, and FIGS. 13A and 13B are a plan view and a cross-sectional view showing the second ohmic electrode.

Referring to FIGS. 12A and 12B, the first ohmic electrode 151 can be formed on the exposed first conductive semiconductor layer 121. The thickness of the first ohmic electrode 151 may be thicker than the thickness of the first insulating layer 171. Thereafter, as shown in FIGS. 13A and 13B, the second ohmic electrode 161 may be formed on the second conductive semiconductor layer 123.

The method of forming the first ohmic electrode 151 and the second ohmic electrode 161 can be applied as is to form a general ohmic electrode. The first ohmic electrode 151 is made of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO Nitride (IZON), Al-Ga ZnO (AGZO), In-Ga ZnO (IGZO), ZnO, IrOx , RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, It may be formed including at least one of Pt, Au, and Hf, but is not limited to these materials. Illustratively, the first ohmic electrode 151 may include a plurality of metal layers (eg, Cr/Al/Ni), and the second ohmic electrode 161 may include ITO, but are not necessarily limited thereto.

14A and 14B are a plan view and a cross-sectional view showing the first electrode, the second electrode, and the second insulating layer.

Referring to FIGS. 14A and 14B, the first electrode 152 may be disposed on the first ohmic electrode 151. The first electrode 152 may be disposed on the first ohmic electrode 151.

The second electrode 162 may be disposed on the second ohmic electrode 161. The first electrode 152 can cover even the side surface of the second ohmic electrode 161.

The first electrode 152 and the second electrode 162 are Ni/Al/Au, or Ni/IrOx/Au, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg , Zn, Pt, Au, and Hf, but is not particularly limited. However, the outermost layer of the first electrode 152 and the second electrode 162 that is exposed to the outside may include Au.

Additionally, the second insulating layer 172 may be disposed on the first electrode 152, the second electrode 162, and the first insulating layer 171. The second insulating layer 172 may include a third hole 172a exposing the first electrode 152 and a fourth hole 162a exposing the second electrode 162.

15A and 15B are a plan view and a cross-sectional view showing the first pad and the second pad.

Referring to FIGS. 15A and 15B , the first pad 153 may be electrically connected to the first electrode 152 through the third hole 172a. Additionally, the second pad 163 may be electrically connected to the second electrode 162 through the fourth hole 162a.

Semiconductor devices can be applied to various types of light source devices. For example, the light source device may include a sterilizing device, a curing device, a lighting device, a display device, and a vehicle lamp. In other words, the semiconductor device can be applied to various electronic devices that are placed in a case and provide light.

The sterilizing device is equipped with a semiconductor device according to the embodiment and can sterilize a desired area. The sterilizing device may be applied to household appliances such as water purifiers, air conditioners, and refrigerators, but is not necessarily limited thereto. In other words, the sterilization device can be applied to a variety of products that require sterilization (e.g., medical devices).

Exemplarily, a water purifier may be equipped with a sterilizing device according to an embodiment to sterilize circulating water. The sterilizing device may be placed at a nozzle or outlet through which water circulates and irradiate ultraviolet rays. At this time, the sterilizing device may include a waterproof structure.

The curing device is equipped with a semiconductor device according to the embodiment and can cure various types of liquids. Liquid may be the broadest concept that includes all various substances that harden when irradiated with ultraviolet rays. For example, the curing device can cure various types of resin. Alternatively, the curing device may be applied to harden beauty products such as nail polish.

The lighting device may include a light source module including a substrate and the semiconductor device of the embodiment, a heat dissipation unit that dissipates heat from the light source module, and a power supply unit that processes or converts an electrical signal provided from the outside and provides the light source module to the light source module. Additionally, the lighting device may include a lamp, head lamp, or street lamp.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, reflector, light emitting module, light guide plate, and optical sheet may constitute a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module can emit light. The light guide plate is disposed in front of the reflector and guides the light emitted from the light emitting module to the front, and the optical sheet includes a prism sheet, etc. and may be disposed in front of the light guide plate. A display panel may be disposed in front of the optical sheet, an image signal output circuit may supply an image signal to the display panel, and a color filter may be disposed in front of the display panel.

When used as a backlight unit of a display device, a semiconductor device can be used as an edge-type backlight unit or a direct-type backlight unit.

The semiconductor device may be a laser diode in addition to the light emitting diode described above.

The laser diode, like the light emitting device, may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure. In addition, the electro-luminescence phenomenon, in which light is emitted when a p-type first conductivity type semiconductor and an n-type second conductivity type semiconductor are bonded and an electric current flows, is used, but the directionality of the emitted light is different. There is a difference in phase. In other words, a laser diode can use a phenomenon called stimulated emission and constructive interference to emit light with one specific wavelength (monochromatic beam) with the same phase and in the same direction. Therefore, it can be used in optical communications, medical equipment, and semiconductor processing equipment.

An example of a light receiving element is a photodetector, which is a type of transducer that detects light and converts the intensity into an electrical signal. Such photodetectors include photocells (silicon, selenium), light output devices (cadmium sulfide, cadmium selenide), photodiodes (e.g., PDs with a peak wavelength in the visible blind spectral region or true blind spectral region), and photovoltaic devices (PDs). Examples include transistors, photomultiplier tubes, photoelectron tubes (vacuum, gas-encapsulated), and IR (Infra-Red) detectors, but embodiments are not limited thereto.

Additionally, semiconductor devices such as photodetectors can generally be manufactured using direct bandgap semiconductors, which have excellent light conversion efficiency. Alternatively, photodetectors have various structures, and the most common structures include a pin-type photodetector using a p-n junction, a Schottky-type photodetector using a Schottky junction, and a MSM (Metal Semiconductor Metal) type photodetector. there is.

A photodiode, like a light emitting device, may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer of the structure described above, and may have a pn junction or pin structure. The photodiode operates by applying a reverse bias or zero bias, and when light is incident on the photodiode, electrons and holes are created and a current flows. At this time, the size of the current may be approximately proportional to the intensity of light incident on the photodiode.

A photovoltaic cell, or solar cell, is a type of photodiode that can convert light into electric current. The solar cell, like the light emitting device, may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure.

In addition, it can be used as a rectifier in electronic circuits through the rectification characteristics of a general diode using a p-n junction, and can be applied to ultra-high frequency circuits and oscillator circuits.

In addition, the above-described semiconductor device is not necessarily implemented only as a semiconductor and may further include a metal material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented using a p-type or n-type dopant. It may also be implemented using doped semiconductor materials or intrinsic semiconductor materials.

Claims (7)

Board;
A first conductivity type semiconductor layer disposed on the substrate, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and the second conductivity type semiconductor layer. A semiconductor structure including a semiconductor layer and a recess penetrating the active layer;
a first electrode disposed on the first conductive semiconductor layer;
a second electrode disposed on the second conductive semiconductor layer;
a first pad disposed on the first electrode;
a plurality of second pads spaced apart from each other on the second electrode; and
It includes; an insulating layer disposed on the first electrode and the second electrode,
The second conductive semiconductor layer is,
a first body extending in a first direction; and
A first branch extending from the first main body in a second direction perpendicular to the first direction,
The insulating layer includes a second hole disposed on the first branch,
The second pad is electrically connected to the second electrode through the second hole,
The length of the first body portion in the second direction is greater than the length of the first branch portion in the first direction,
The exposed first conductive semiconductor layer includes a second body portion extending in the first direction and a second branch portion extending in the second direction,
The length of the second main body in the second direction is smaller than the length of the first main body in the second direction,
A semiconductor device wherein a length of the second branch in the first direction is smaller than a length of the first branch in the first direction. According to paragraph 1,
The first direction is a 1-1 direction; and a 1-2 direction opposite to the 1-1 direction,
The first branch further includes a first sub-branch extending in the 1-1 direction or a second sub-branch extending in the 1-2 direction. According to paragraph 2,
The first branches are plural,
A semiconductor device wherein the first sub-branches are arranged side by side in a second direction in a plurality of first branch portions. According to paragraph 2,
The first branches are plural,
A semiconductor device wherein the second sub-branches are arranged side by side in a second direction in a plurality of first branch portions. According to paragraph 2,
A semiconductor device wherein the first sub-branches and the second sub-branches are intersected in the second direction. According to clause 5,
The second hole is a 2-1 hole disposed on the first sub branch; and a 2-2 hole disposed on the second sub branch,
The semiconductor device wherein the 2-1 hole does not overlap the 2-2 hole in the second direction. According to paragraph 1,
The second hole is a semiconductor device whose length in the first direction is smaller than the length in the second direction.

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