KR102131933B1 - Apparatus for atomic layer deposition and method for depositing atomic layer using the same - Google Patents

Abstract

The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method using the same.
Atomic layer deposition apparatus according to the present invention, in the atomic layer deposition apparatus for forming an atomic layer on a substrate, the substrate is seated, the substrate in the first direction and the second direction different from the first direction and the substrate A substrate transfer unit for transferring; And a source gas supply module for supplying a source gas, a reaction gas supply module for supplying a reaction gas, and a source gas supply module for supplying a reaction gas, and the reaction gas supply module disposed above the substrate transferred by the substrate transfer unit. Gas supply unit including a purge gas supply module disposed in; And a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reaction gas supply pipe connecting the reaction gas supply module and the reaction gas supply source. At least one of the supply module and the reaction gas supply module is characterized in that the gas supply direction to the substrate can be varied according to the substrate transfer direction of the substrate transfer part.

Description

Atomic layer deposition apparatus and atomic layer deposition method using the same{APPARATUS FOR ATOMIC LAYER DEPOSITION AND METHOD FOR DEPOSITING ATOMIC LAYER USING THE SAME}

The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method.

In general, as a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemistry using chemical reaction And vapor deposition (chemical vapor deposition, CVD).

Recently, as the design rules of semiconductor devices are rapidly becoming fine, a thin film having a fine pattern is required, and the step in the region where the thin film is formed is also very large, so that a fine pattern having an atomic layer thickness can be formed very uniformly. In addition, the use of atomic layer deposition (ALD), which has excellent step coverage, is increasing.

This atomic layer deposition method is similar to a general chemical vapor deposition method in that it uses a chemical reaction between gas molecules. However, unlike conventional CVD to deposit a reaction product generated by injecting a plurality of gas molecules into a process chamber at the same time, the atomic layer deposition method injects a gas containing one source material into a process chamber and is heated. The difference is that the product by reaction between the source materials is deposited on the substrate surface by adsorbing to the substrate and then injecting a gas containing other source materials into the process chamber.

However, when using the atomic layer deposition process, due to a limitation in reactivity between the source gas and the reaction gas, there is a problem that the deposition time is long.

Accordingly, in order to reduce the deposition time in the atomic layer deposition process, atomic layer deposition methods such as a space division method in which atomic substrate deposition is performed by moving a substrate in a process chamber and supplying source gas or reactive gas for each deposition area Is being proposed.

Republic of Korea Registered Patent Publication No. 10-1407068 (2014.06.13)

The present invention is to improve the atomic layer deposition performance, to provide an atomic layer increasing apparatus capable of forming a high-quality atomic layer more quickly and an atomic layer deposition method using the same.

An atomic layer deposition apparatus according to an aspect of an embodiment of the present invention, in the atomic layer deposition apparatus for forming an atomic layer on a substrate, the substrate is seated, the substrate in a first direction and a second different from the first direction A substrate transfer unit transferring the substrate in a direction; And a source gas supply module for supplying a source gas, a reaction gas supply module for supplying a reaction gas, and a source gas supply module for supplying a reaction gas, and the reaction gas supply module disposed above the substrate transferred by the substrate transfer unit. Gas supply unit including a purge gas supply module disposed in; And a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reaction gas supply pipe connecting the reaction gas supply module and the reaction gas supply source. At least one of the supply module and the reaction gas supply module may vary the gas supply direction to the substrate according to the substrate transfer direction of the substrate transfer part.

In addition, at least one of the source gas supply module and the reaction gas supply module has a first end gas supply passage and a second end gas supply passage connected to one of the source gas supply pipe and the reaction gas supply pipe therein. A gas supply nozzle body is formed, and the first end gas supply flow passage is orthogonal to a plane on which the substrate is formed and inclined at a first supply angle preset with respect to a third direction from the gas supply part toward the substrate. By supplying any one of the source gas and the reaction gas to the substrate, the first end gas supply flow path and the second end gas supply flow path may be alternately activated according to the transfer direction of the substrate.

In addition, the second end gas supply flow passage, either one of the source gas and the reaction gas to the substrate in a direction inclined at a predetermined second supply angle with respect to the third direction orthogonal to the plane on which the substrate is formed And the first gas supply direction by the first end gas supply flow path includes a first horizontal supply vector component parallel to the first direction and a first vertical supply vector component parallel to the third direction. The second gas supply direction by the two end gas supply flow paths includes a second horizontal supply vector component parallel to the second direction and a second vertical supply vector component parallel to the third direction, wherein the first vertical supply vector component and the The second vertical feed vector component may be the same.

In addition, the first end gas supply flow path and the second end gas supply flow path each include a first nozzle unit formed to incline at the first supply angle and a second nozzle unit formed to incline at the second supply angle. It can contain.

In addition, when the substrate transfer unit transfers the substrate in the first direction, the second end gas supply flow path is activated, and when the substrate transfer unit transfers the substrate in the second direction, the first end gas supply The euro can be activated.

Further, at least one of the source gas supply module and the reaction gas supply module is configured to selectively supply any one of the source gas and the reaction gas to the first end gas supply flow path and the second end gas supply flow path. It may include a valve unit portion.

In addition, the valve unit unit may include a first end valve unit disposed on the first end gas supply flow path and a second end valve unit disposed on the second end gas supply flow path.

In addition, the valve unit unit may be installed at a point where the first end gas supply flow path and the second end gas supply flow path branch from any one of the source gas supply pipe and the reaction gas supply pipe.

In addition, at least one of the source gas supply module and the reaction gas supply module is spaced apart from each other with an end gas supply flow path for supplying any one of the source gas and the reaction gas, and the end gas supply flow path therebetween. And a first exhaust flow path and a second exhaust flow path for discharging surplus gas between the gas supply part and the substrate to the outside, the first exhaust pressure of the first exhaust flow path and the second of the second exhaust flow path The exhaust pressure can be independent of each other.

In addition, when the substrate transfer part transfers the substrate in the first direction, the first exhaust pressure provided by the first exhaust flow path spaced apart in the first direction based on the second exhaust flow path is the When the second exhaust pressure is greater than the second exhaust pressure provided by the second exhaust channel, and the substrate transfer unit transfers the substrate in the second direction, the second exhaust pressure provided by the second exhaust channel is the first exhaust channel It may be formed smaller than the first exhaust pressure provided by.

In addition, a pumping module unit including a first pumping module connected to the first exhaust channel and a second pumping module connected to the second exhaust channel; And an exhaust pipe part including a first exhaust pipe connecting the first pumping module and the first exhaust flow passage and a second exhaust pipe connecting the second pumping module and the second exhaust flow passage; The first pumping module provides the first exhaust pressure to the first exhaust passage, and the second pumping module provides the second exhaust pressure to the second exhaust passage, and the first pumping module and the first The 2 pumping module may vary the first exhaust pressure and the second exhaust pressure according to the transfer direction of the substrate and provide the first exhaust passage and the second exhaust passage.

In addition, a pumping module unit including a first pumping module connected to the first exhaust channel and the second exhaust channel, and a second pumping module connected to the first exhaust channel and the second exhaust channel; and, A first variable valve unit disposed between the first pumping module and the first exhaust flow path, a second variable valve unit disposed between the first pumping module and the second exhaust flow path, the second pumping module and the A variable valve unit including a third variable valve unit disposed between the first exhaust flow path and a fourth variable valve unit disposed between the second pumping module and the second exhaust flow path; and further comprising the first The exhaust pressure provided by each of the pumping module and the second pumping module is not variable, and the exhaust pressure of any one of the first pumping module and the second pumping module is the exhaust pressure of the other pumping module If it is formed larger, and the first variable valve and the fourth variable valve are opened, the second variable valve and the third variable valve are closed, and the first variable valve and the fourth variable valve are closed. In this case, the second variable valve and the third variable valve may be opened.

Further, between the first pumping module and the first variable valve and the second variable valve, condensation of the reaction gas and the source gas to the first pumping module via the first variable valve or the second variable valve A first trap portion for suppression is disposed, and flows to the second pumping module through the third variable valve or the fourth variable valve between the second pumping module and the third variable valve and the fourth variable valve. A second trap portion for suppressing condensation of the reactant gas and the source gas may be disposed.

Further, at least one of the source gas supply pipe and the reaction gas pipe, a plasma electrode for supplying a voltage to the source gas or the reaction gas flowing toward the gas supply part to plasma the source gas or the reaction gas An additional portion may be provided, and the plasma electrode part may include a first electrode connected to the source gas supply pipe or the reaction gas supply pipe, and a second electrode provided in the source gas supply pipe or the reaction gas supply pipe.

In addition, one of the first electrode and the second electrode of the plasma electrode part is connected to an RF oscillator, the other is a ground electrode, and the second electrode is in the source gas supply pipe or the reaction gas supply pipe It may be formed extending in a direction parallel to the flow direction of the source gas or the reaction gas flowing in.

An atomic layer deposition apparatus according to another aspect of an embodiment of the present invention, in the atomic layer deposition apparatus for forming an atomic layer on a substrate, the substrate is seated, the substrate in a first direction and a second different from the first direction A substrate transfer unit transferring the substrate in a direction; And a source gas supply module for supplying a source gas, a reaction gas supply module for supplying a reaction gas, and a source gas supply module for supplying a reaction gas, and the reaction gas supply module disposed above the substrate transferred by the substrate transfer unit. Gas supply unit including a purge gas supply module disposed in; And a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reaction gas supply pipe connecting the reaction gas supply module and the reaction gas supply source. At least one of the supply module and the reaction gas supply module is spaced apart from each other with an end gas supply flow path for supplying any one of the source gas and the reaction gas, and the end gas supply flow path therebetween. And a first exhaust flow path and a second exhaust flow path for discharging the surplus gas between the substrates to the outside, wherein the first exhaust pressure of the first exhaust flow path and the second exhaust pressure of the second exhaust flow path are mutually mutual. Is independent.

In addition, at least one of the source gas supply module and the reaction gas supply module includes a gas supply nozzle body in which the end gas supply flow path connected to one of the source gas supply pipe and the reaction gas supply pipe is formed. And, the end gas supply flow path includes a first end gas supply flow path and a second end gas supply flow path, and the first end gas supply flow path is orthogonal to a plane on which the substrate is formed, and the substrate is supplied from the gas supply unit. Any one of the source gas and the reaction gas is supplied to the substrate in a direction inclined at a predetermined first supply angle with respect to the third direction to the substrate, and the second end gas supply flow passage includes a plane on which the substrate is formed. Supplying any one of the source gas and the reaction gas to a substrate in a direction inclined at a second supply angle preset with respect to the orthogonal third direction, and supplying the first end gas supply flow path and the second end gas The flow path may be activated alternately according to the transfer direction of the substrate.

An atomic layer deposition method according to another aspect of an embodiment of the present invention, in the atomic layer deposition method for depositing an atomic layer on a substrate using an atomic layer deposition apparatus, the substrate in a first direction and the first different from the first direction A substrate mounting step of mounting on a substrate transfer unit for transferring in two directions; A first deposition mode step of forming an atomic layer with respect to the substrate while transferring the substrate in the first direction while the substrate is mounted on the substrate transfer unit; And a second deposition mode step of forming an atomic layer with respect to the substrate while transferring the substrate in the second direction while the substrate is mounted on the substrate transfer unit. In a deposition region formed between a gas supply module for supplying a source gas and the substrate, a first exhaust pressure of a first exhaust region located in the first direction based on the center of the deposition region and exhausting residual gas and The second exhaust pressure of the second exhaust region positioned in the second direction is formed differently based on the reference of the deposition region.

Further, in the first deposition mode step, the second exhaust pressure may be greater than the first exhaust pressure, and in the second deposition mode step, the second exhaust pressure may be less than the first exhaust pressure.

Further, in the second deposition mode step, the gas supply module has a first vertical supply vector component parallel to the third direction, which is a vertical direction toward the substrate, and a first horizontal supply vector component parallel to the first direction. Supplying the source gas or the reaction gas to the substrate in a first gas supply direction, and in the first deposition mode step, the gas supply module comprises: a first parallel supply vector component and a second parallel to the second direction The source gas or the reaction gas may be supplied to the substrate in a second gas supply direction having two horizontal supply vector components.

According to the proposed embodiment, a high-quality atomic layer can be formed more quickly.

1 is a view showing an atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 2 is an enlarged view of part II of the atomic layer deposition device in the process of operating the atomic layer deposition device of FIG. 1 in a first deposition mode.
3 is a view showing a process of forming an atomic layer by the atomic layer deposition apparatus of FIG. 1.
FIG. 4 is an enlarged view of part II of the atomic layer deposition device in the process of operating the atomic layer deposition device of FIG. 1 in a second deposition mode.
5 is a view showing the interior of the gas supply pipe of the atomic layer deposition apparatus of Figure 1;
6 is a view illustrating an atomic layer deposition method using the atomic layer deposition apparatus of FIG. 1.
7 is a view showing an atomic layer deposition apparatus according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily practice. The present invention can be implemented in many different forms and is not limited to the embodiments described herein. In the drawings, parts not related to the description are omitted in order to clearly describe the present invention, and the same reference numerals are attached to the same or similar elements throughout the specification. In addition, since the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, the present invention is not necessarily limited to what is illustrated.

In the present invention, "~ on" means that it is located above or below the target member, and does not necessarily mean that it is located above the gravity direction. Also, in the specification, when a part “includes” a certain component, it means that the component may further include other components, not to exclude other components, unless otherwise stated. In addition, in this specification, a "unit" includes a unit realized by hardware, a unit realized by software, or a unit realized by using both. Further, one unit can be realized using two or more hardware, and two or more units can be realized by one hardware.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing an atomic layer deposition apparatus according to an embodiment of the present invention, Figure 2 is an atomic layer deposition apparatus of Figure 1 in the process of operating in the first deposition mode, the enlarged portion II of the atomic layer deposition apparatus 3 is a view showing a process of forming an atomic layer by the atomic layer deposition apparatus of FIG. 1. And, FIG. 4 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in a second deposition mode, and FIG. 5 is a gas supply pipe of the atomic layer deposition apparatus of FIG. 1 It is a drawing showing the interior of.

First, referring to Figure 1, the atomic layer deposition apparatus 1 according to an embodiment of the present invention, the substrate transfer unit 100, the gas supply unit (210 ~ 230, 310, 320, 410 ~ 460), a gas supply source (110, 120, 130), gas supply pipe portion (510, 520, 530), a plurality of pumping modules (610, 620, 630, 640), and a plurality of trap portions (710, 720, 730, 740) It includes.

The atomic layer deposition equipment gas module according to the present embodiment may form various thin film layers, for example, at least one thin film layer of a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer.

In more detail, the atomic layer deposition apparatus 1, in a process chamber formed therein, in a state where the substrate S is seated on the substrate transfer unit 100, the first direction D ₁ or the first direction D _The source gas (g _s ), the reaction gas (from the gas supply units 210 to 230, 310, 320, 410 to 460) which are moved in a second direction D ₂ different from ₁ ) and disposed above the substrate S g _r ) and a purge gas (g _s ) are injected, respectively, so that a source material and a reactive material are respectively deposited on the substrate S in each deposition region formed at a corresponding location.

The first direction D ₁ and the second direction D ₂ may be, for example, opposite directions to each other, and the atomic layer deposition apparatus 1 forms an atomic layer with respect to the substrate S moving linearly inside. can do. In this case, the process chamber inside the atomic layer deposition apparatus 1 may be a vacuum atomic layer deposition apparatus having an atmospheric pressure lower than atmospheric pressure, or an atmospheric pressure atomic layer deposition apparatus having a pressure equal to or similar to atmospheric pressure.

As in the present embodiment, in the case of the atomic layer deposition apparatus 1 of the spatial division type, a source gas is provided between the deposition region where the source gas g _s is deposited and the deposition region where the reaction gas g _r is deposited. A purge gas (g _p ) for preventing (g _s ) and reaction gas (g _r ) from mixing with each other is supplied.

For example, the source gas (g _s ) for forming a metal thin film layer is one of TriMethyl Aluminum (TMA), Tri Ethyl Aluminum (TEA) and Di Methyl Aluminum Chloride (DMACl), and the reaction gas (g _r ) is , Oxygen gas and ozone gas. At this time, the purge gas (g _p ), argon (Ar), nitrogen (N2), helium (He) any one gas or a mixture of two or more gases may be used. In addition, for forming the silicon thin film layer, the source gas (g _s ) may be one of silane (Silane, SiH4), disilane (Disilane, Si2H6), and silicon tetrafluoride (SiF4) containing recon, and a reaction gas (g _r ) may be one of oxygen gas and ozone gas. In this case, as the purge gas, any one of argon (Ar), nitrogen (N2), and helium (He) or a mixture of two or more gases may be used. At this time, the source gas (g _s ), the purge gas (g _p ), the reaction gas (g _r ) is not limited to the above example and may be changed according to the needs of those skilled in the art.

The substrate transfer unit 100 moves in the first direction D ₁ or the second direction D ₂ in a state where the substrate S is seated to move the substrate S in the first direction D ₁ or second The direction D ₂ is transferred. The substrate transfer unit 100 may be, for example, a sliding movable stage or a conveyor belt.

The gas sources 110, 120, and 130 include a purge gas source 110 that supplies purge gas g _p , a reaction gas source 120 that supplies reaction gas g _r , and a source gas g _s It includes a source gas source 130 for supplying.

The gas supply units 210 to 230, 310, 320, 410 to 460 are disposed above the substrate S transferred by the substrate transfer unit 100, and the source gas supply module 310 for supplying the source gas g _s , 320), between the reaction gas supply module (210, 220, 230) for supplying the reaction gas (g _r ), the source gas supply module (310, 320) and the reaction gas supply module (210, 220, 230) It includes a purge gas supply module (410, 420, 430, 440, 450, 460) disposed.

The atomic layer deposition apparatus 1 according to an embodiment of the present invention includes, for example, a first reaction gas supply module 210, a second reaction gas supply module 220, a third reaction gas supply module 230, The first source gas supply module 310 and the second reaction gas supply module 220 and the third reaction gas supply module disposed between the first reaction gas supply module 210 and the second reaction gas supply module 220 It includes a second source gas supply module 320 disposed between (230). And, the atomic layer deposition apparatus 1 is a first purge gas supply module 410 disposed at a position spaced apart in the first direction (D ₁ ) with respect to the first reaction gas supply module 210, the third reaction The sixth purge gas supply module 460 disposed at a position spaced apart in the second direction D ₂ based on the gas supply module 230, and the respective reaction gas supply modules 210, 220, and 230 and a source And a second purge gas supply module 420 to a fifth purge gas supply module 450 disposed between the gas supply modules 310 and 320.

In the second purge gas supply module 420 to the fifth purge gas supply module 450, the purge gas g _p supplied to the substrate S side has a reaction gas g _r and a source gas g _s mixed with each other. The purge gas (g _p ) supplied from the first purge gas supply module 410 and the sixth purge gas supply module 460 to the substrate 100 is exemplified by the reaction gas g _r . It prevents mixing with the air flowing in.

The gas supply pipe parts 510, 520, and 530 are purge gas supply pipes 510 connected to the purge gas supply source 110, reaction gas supply pipes 520 connected to the reaction gas supply source 120, and source gas It includes a source gas supply pipe 530 connected to the source 130. The purge gas supply pipe 510 is connected to the first purge gas supply module 410 to the sixth purge gas supply module 460, so that the first purge gas supply module 410 to the sixth purge gas supply module 460 The purge gas (g _p ) is supplied to the side, and the reaction gas supply pipe 520 supplies the reaction gas (g _r ) to the first reaction gas supply module 210 to the third reaction gas supply module 230. Then, the source gas supply pipe 530 supplies the source gas g _s to the first source gas supply module 310 and the second source gas supply module 320.

In the atomic layer deposition apparatus 1 according to an embodiment of the present invention, the reactive gas supply modules 210, 220 and 230 and the source gas supply modules 310 and 320 are alternately arranged as described above, and the substrate 100 While moving in the first direction (D ₁ ) or the second direction (D ₂ ), at one surface of the substrate (S) facing the reaction gas supply modules (210, 220, 230) and the source gas supply modules (310, 320) Adsorption and reaction of the reaction gas (g _r ) and the source gas (gs) are continuously performed, so that atomic layer deposition can be performed more quickly.

On the other hand, the pumping module (610, 620, 630, 640), the source gas (g _s ) and the reaction gas (g _r ) that is not adsorbed or reacted to the substrate (S) for discharging to the outside in the process chamber A first pumping module 610, a second pumping module 620 connected to the reactant gas supply modules 210, 220, and 230, which provides exhaust pressure, and a source gas supply module 310, 320. It includes a 3 pumping module 630 and a fourth pumping module 640. The pumping modules 610, 620, 630, 640 according to the present embodiment may be compressors for providing exhaust pressure, and the pumping modules 610, 620, 630, 640 may vary the exhaust pressure by a control signal. Can.

The trap portions 710, 720, 730, and 740 exhaust the pumping modules 610, 620, 630, and 640, and the reaction gas supply modules 210, 220, 230, and source gas supply modules 310, 320. Reaction gas (g _r ) disposed in the pipe parts 541, 542, 543, 543 and flowing toward the pumping modules 610, 620, 630, 640 through the exhaust pipe parts 541, 542, 543, 543 or Condensation of the source gas g _s is suppressed to improve exhaust efficiency.

For example, the trap portions 710, 720, 730, and 740 apply thermal energy to the exhaust passages 541, 542, 543, and 543, thereby suppressing condensation of the reaction gas g _r or the source gas g _s . can do.

On the other hand, in the atomic layer deposition apparatus 1 according to an embodiment of the present invention, the substrate S moves linearly inside the processing chamber. As the substrate S moves linearly inside the processing chamber, some regions of the substrate S facing one reactive gas supply module 210, 220, 230 or source gas supply modules 310, 320 In the deposition region between, the density of the source gas (g _s ) or the feed gas (g _r ) is different, and the atomic layer deposition quality is caused by the density of the under or excessive source gas (g _s ) or the feed gas (g _r ). The problem is hindered. That is, by the surface tension between the surface of the substrate S and the source gas (g _s ) or the supply gas (g _r ), than the gas density of the portion of the deposition region located on the side of the substrate S in the traveling direction The gas density of the portion located on the opposite side of the traveling direction of the substrate S is high.

In addition, when a structure having a large aspect ratio, such as a via hole or a trench, is formed on the substrate S, it is formed in a direction perpendicular to the substrate S toward the substrate S If the source gas (g _s ) or the reaction gas (g _r ) is supplied in the third direction (D ₃ ), a problem occurs that the source material or the reaction material cannot be smoothly adsorbed or deposited on the surface of the structure. .

Therefore, the atomic layer deposition apparatus 1 according to an embodiment of the present invention, the exhaust pressure for the portion located on the side of the deposition region intermediate substrate (S) and the traveling direction of the deposition region intermediate substrate (S) By allowing the exhaust pressures for the portions located on opposite sides to be formed differently, it is possible to form a uniform gas density in the deposition region.

In addition, the atomic layer deposition apparatus 1 according to an embodiment of the present invention, the source gas supply module (310, 320) and the reaction gas supply module (210, 220, 230), the substrate transfer direction of the substrate transfer unit 100 Accordingly, by varying the gas supply direction to the substrate, it is possible to improve the atomic layer deposition quality.

Hereinafter, the configuration of the gas supply module of the atomic layer deposition apparatus 1 according to an embodiment of the present invention will be described in more detail.

FIG. 2 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in a first deposition mode, and FIG. 3 shows an atomic layer formed by the atomic layer deposition apparatus of FIG. 1. FIG. 4 is an enlarged view of part II of the atomic layer deposition apparatus in a process in which the atomic layer deposition apparatus of FIG. 1 is operated in a second deposition mode.

1 to 4, the first reaction gas supply module 210 of the atomic layer deposition apparatus 1 includes a first end gas supply passage 216 and a first end gas supply passage 216 connected to the reaction gas supply pipe 520 therein. A first exhaust flow path spaced apart from the gas supply nozzle body 211 in which the second end gas supply flow path 217 is formed, and the first end gas supply flow path 216 and the second end gas supply flow path 217 are interposed therebetween. 212 and a second exhaust flow path 213.

The first end gas supply flow passage 216 is orthogonal to the plane on which the substrate S is formed, and the substrate S from the gas supply unit, for example, the first reaction gas supply module 210 disposed above the substrate S The reaction gas g _{r is} supplied to the substrate S in a direction inclined at a predetermined first supply angle θ ₁ with respect to the third direction D ₃ toward ).

In addition, the second end gas supply flow passage 217 moves the reaction gas g _r with respect to the substrate S in a direction inclined at a second supply angle θ ₂ preset with respect to the third direction D ₃ . To supply.

Therefore, the first gas supply direction by the first end gas supply flow passage 216 is the first horizontal supply vector component VD ₁ parallel to the first direction D1 and the first vertical parallel to the third direction D ₃ . Feed vector component (VD ₃₁ ). Then, the second terminal the second gas supply direction by the gas supply passage 217 in the second direction (D ₂₎ and parallel to the second horizontal feed vector component (VD ₂₎ and the third direction and parallel to the second vertical feed vector component (VD ₃₂ ).

In this case, the first vertical supply vector component VD ₃₁ and the second vertical supply vector component VD ₃₂ are the same, and the first vertical supply vector component VD ₃₁ and the second vertical supply vector component VD ₃₂ are vertical. It can be referred to as a supply vector component (VD ₃ ).

In addition, the first end gas supply flow passage 216 and the second end gas supply flow passage 217 are provided with a first nozzle unit 214 and a second supply angle θ formed to be inclined at a first supply angle θ ₁ . ₂ ) may include a second nozzle unit 215 each formed to be inclined. Thus, when the reaction gas (g _r) are supplied through the first nozzle unit 214, a reactive gas (g _r) are supplied to the deposition zone in a direction inclined at a first feed angle (θ _1), the when the reaction gas (g _r) are supplied through the second nozzle unit 214, a reactive gas (g _r) are supplied to the deposition zone in a direction which is inclined at a second feed angle (θ _2).

Then, the first reaction gas supply module 210, the valve unit unit 218 for selectively supplying the reaction gas (g _r ) to the first end gas supply flow path 216 and the second end gas supply flow path 217 , 219). The valve unit parts 218 and 219 include a first end valve unit 218 disposed on the first end gas supply flow passage 216 and a second end valve unit disposed on the second end gas supply flow passage 217. (219).

The first end valve unit 218 and the second end valve unit 219 selectively select the first end gas supply flow passage 216 and the second end gas supply flow passage 217 according to a control signal from a control unit (not shown). Open and close.

Therefore, the first end gas supply flow passage 216 and the second end gas supply flow passage 217 according to the present embodiment are alternately activated according to the transfer direction of the substrate S, so that the reaction gas g _r is first It can be supplied to the deposition region between the reaction gas supply module 210 and the substrate (S).

For example, when the substrate transfer unit 100 transfers the substrate S in the first direction D ₁ , the second end gas supply flow path 217 is activated to transfer the reaction gas g _s to the substrate S ) At a second supply angle θ ₂ . At this time, the first end valve unit 218 of the first end gas supply flow passage 216 that is not activated closes the first end gas supply flow passage 216 to react gas in the first end gas supply flow passage 216. (g _s ) Inhibit flow (first deposition mode).

Therefore, the reaction material P of the reaction gas g _r having the second horizontal supply vector component VD ₂ in the direction opposite to the transport direction of the substrate S is a structure such as a trench T or a via having a large aspect ratio. It can be easily adsorbed or deposited on the wall surface of, or can be easily adsorbed or deposited on the bottom surface of the deeper trench (T) or via after being bounced on the wall surface.

Conversely, when the substrate transfer unit 100 transfers the substrate S in the second direction D ₂ , the first end gas supply flow passage 216 is activated, so that the reaction gas g _s is transferred to the substrate S. With respect to the first supply angle θ ₁ . At this time, the second end valve unit 219 of the second end gas supply flow passage 217 that is not activated closes the second end gas supply flow passage 217 to react gas in the second end gas supply flow passage 217. (g _s ) Inhibit flow (second deposition mode).

In this embodiment, the first end valve unit 218 and the second end valve unit in which the valve unit portions 218 and 219 are disposed on the first end valve unit 218 and the second end gas supply passage 217 Although described as a configuration including (219), the valve unit portion is installed at a point where the first end gas supply flow path 218 and the second end gas supply flow path 219 branch from the reaction gas supply pipe 520 It is also possible.

On the other hand, the first exhaust flow path 212 and the second exhaust flow path 213 discharge the excess gas between the first reaction gas supply module 210 and the substrate to the outside, and the first exhaust flow path 212 first exhaust pressure (P ₁₎ and a second exhaust pressure in the exhaust passage (213) (P ₂₎ can be formed independently of each other.

When the substrate transfer unit 100 transfers the substrate S in the first direction D ₁ (first deposition mode), it is arranged to be spaced apart in the second direction D ₂ based on the first exhaust flow path 212 The second exhaust pressure P ₂ provided by the second exhaust flow path 213 is formed to be larger than the upper first exhaust pressure P ₁ provided by the first exhaust flow path 212.

That is, when the substrate S is transferred in the first direction D ₁ , the surface tension of the substrate S and the purge gas g _p supplied from the second purge gas supply module 420 may cause the second The density of the reaction gas g _r in the region where the exhaust flow path 213 is located is greater than the density of the reaction gas g _r in the region where the first exhaust flow path 212 is located, and the second exhaust flow path By forming the second exhaust pressure P ₂ of 213 larger than the first exhaust pressure P ₁ of the first exhaust flow path 212, the residual reaction gas at a greater pressure in the second exhaust flow path 213 ( g _r ) may be discharged from the deposition region to the outside. Accordingly, the density of the reaction gas g _r may be maintained uniformly over the entire section of the deposition region between the first reaction gas supply module 210 and the substrate S.

Conversely, when the substrate transfer unit 100 transfers the substrate S in the second direction D ₂ (second deposition mode), the first exhaust pressure P ₁ provided by the first exhaust flow path 212 is It may be formed to be larger than the second exhaust pressure (P ₂ ) provided by the second exhaust flow path (213).

Meanwhile, the first pumping module 610 of the pumping modules 610, 620, 630, and 640 is connected to the first exhaust channel 212 through the first exhaust pipe 541, and the second pumping module 620 is The second exhaust pipe 542 is connected to the second exhaust flow path 213.

The first pumping module 610 and the second pumping module 620 provide a first exhaust pressure (P ₁ ) and a second exhaust pressure (P ₂ ), respectively, according to the transport direction of the substrate (S), The first exhaust pressure P ₁ and the second exhaust pressure P ₂ provided by the pumping module 610 and the second pumping module 620 are variable. For example, in the first deposition mode, when the first exhaust pressure P ₁ is P, the second exhaust pressure P ₂ may be formed as 2P, and conversely, in the second deposition mode, the first exhaust pressure When (P ₁ ) is 2P, the second exhaust pressure P ₂ may be formed of P.

Since the second reaction gas supply module 220 and the third reaction gas supply module 230 are the same as those of the first reaction gas supply module 210, detailed description thereof will be omitted.

In addition, the first source gas supply module 310 and the second source gas supply module 320, the third pumping module 630 and the fourth pumping module 640 for discharging the remaining source gas (g _s ) There is only a difference in configuration to be connected to, and in other configurations, since it is substantially the same as the first reaction gas supply module 210, detailed description thereof will be omitted.

On the other hand, the reactivity between the atomic layer deposition apparatus 1 includes a reactive gas (g _r), or the plasma source gas (g _s), the reactive gas (g _r), and a source gas (g _s) in accordance with an embodiment of the present invention Improve it. Hereinafter, a configuration for plasmaizing the reaction gas g _r or the source gas g _s will be described in detail.

5 is a view showing the interior of the gas supply pipe of the atomic layer deposition apparatus of Figure 1;

Referring to FIG. 5, in the reaction gas pipe 520 according to the embodiment of the present invention, a voltage is applied to the reaction gas g _r flowing toward the gas supply unit, for example, the first reaction gas supply module 210. By providing, plasma electrode portions 526 and 527 for plasmatizing the reaction gas g _r are provided. At this time, the plasma electrode units 526 and 527 may be provided in a position adjacent to the first reaction gas supply module 210 or in the first reaction gas supply module 210.

The plasma electrode units 526 and 527 include a first electrode 527 connected to a reaction gas supply pipe 520 formed of a conductive material, and a second electrode 526 provided in the reaction gas supply pipe 520. Includes. In this embodiment, the first electrode 527 is a ground electrode, and the second electrode 526 is connected to an RF oscillator 700 providing a high frequency voltage. The second electrode 526 is formed to extend in a direction parallel to the flow direction of the reaction gas g _r flowing in the reaction gas supply pipe 520. At this time, the wire for connecting the second electrode 527 and the RF oscillator 700 may be insulated from the reaction gas supply pipe 520 and penetrate the reaction gas supply pipe 520.

According to the atomic layer deposition apparatus 1 according to an embodiment of the present invention, in the space between the second electrode 526 formed in a columnar shape and the inner surface of the gas supply pipe 520 facing each other, the reactant gas (g) flowing _{As r} ) becomes plasma, there is an advantage that plasma efficiency can be improved.

In this embodiment, the first electrode 527 is described as being connected to the reaction gas supply pipe 520 formed of a metal material, but the reaction gas supply pipe 520 of the first electrode 527 is formed of an insulating material. ) It is also possible to form a metal material formed on the inner surface of the coating or circular cylinder. In addition, a configuration in which the first electrode 527 is connected to the RF oscillator and the second electrode 526 is formed as a ground electrode is also possible.

In addition, a configuration in which plasma electrode parts 526 and 527 are formed in the source gas supply pipe 530 is also possible.

Hereinafter, an atomic layer deposition method using the atomic layer deposition apparatus 1 according to an embodiment of the present invention will be described in detail.

6 is a view illustrating an atomic layer deposition method using the atomic layer deposition apparatus of FIG. 1.

Referring to FIG. 6, first, a substrate mounting step S110 of mounting the substrate S to the substrate transfer unit 100 is performed.

Then, while the substrate S is mounted on the substrate transfer unit 100, while transferring the substrate S in the first direction D ₁ , a first deposition mode for forming an atomic layer with respect to the substrate S Step S120 is performed.

At this time, the reaction gas supply module 210, 220, 230 and the source gas supply module 310, 320, the second gas having a vertical supply vector component (VD ₃ ) and a second horizontal supply vector component (VD ₂ ) The reaction gas g _r and the source gas g _s are supplied to the substrate S in the supply direction.

And, the reaction gas supply module (210, 220, 230) and the source gas supply module (310, 320) and the substrate (S) for supplying the reaction gas (g _r ) and the source gas (g _s ) to the substrate (S) ) In the deposition regions formed between the first exhaust pressure (P ₁ ) of the first exhaust region which is located in the first direction (D ₁ ) with respect to the center of each of the deposition regions and exhausts residual gas. The second exhaust pressure P ₂ of the second exhaust region positioned in the second direction D ₂ around the reference of the deposition region may be formed differently. The first exhaust pressure P ₁ in the first deposition mode step S120 is formed to be smaller than the second exhaust pressure P ₂ .

After the substrate S is transferred in the first direction D ₁ by a predetermined distance, the transfer direction of the substrate transfer unit 100 is reversed, while transferring the substrate S in the second direction D ₂ , the substrate A second deposition mode step (S130) of forming an atomic layer with respect to (S) is performed.

At this time, the reaction gas supply modules 210, 220, 230 and the source gas supply modules 310, 320, the first gas having a vertical supply vector component (VD ₃ ) and a first horizontal supply vector component (VD ₁ ) The reaction gas g _r and the source gas g _s are supplied to the substrate S in the supply direction.

In addition, the first exhaust pressure P ₁ in the second deposition mode step S130 is formed larger than the second exhaust pressure P ₂ .

In this embodiment, the first and second exhaust pressures P ₁ and P ₂ of the reactive gas supply modules 210 and 220 and the source gas supply modules 310 and 320 are described as being different. However, the first exhaust pressure (P ₁ ) and the second exhaust pressure (P ₂ ) of any one of the gas supply modules of the reactive gas supply modules (210, 220, 230) and the source gas supply modules (310, 320) are Although formed differently, other types of gas supply modules may exhaust the residual gas without distinguishing between the first exhaust pressure P ₁ and the second exhaust pressure P ₂ .

After the substrate S is transferred in the second direction D ₂ by a predetermined distance, it is determined whether the deposition is finished (S140), and if the atomic layer deposition process is not finished, the first deposition mode step (S120) again When the atomic layer deposition process is finished, control is ended.

Control of the first end supply flow path, the second end supply flow path, the first exhaust pressure (P ₁ ), and the second exhaust pressure (P ₂ ) according to the first deposition mode and the second deposition mode is as follows. Same as

Substrate transfer
direction First end
Supply Second end
Supply euro First exhaust
pressure Second exhaust
pressure First deposition mode First direction (D ₁ ) Disabled Activation littleness greatness Second deposition mode Second direction (D ₂ ) Activation Disabled greatness littleness

Meanwhile, in the first deposition mode step (S120) and the second deposition mode step (S130), the first exhaust pressure (P ₁ ) and the second exhaust pressure (P ₂ ) are finely adjusted to be supplied by the gas supply module. The supplied reaction gas (g _r ) and source gas (g _s ) supply angles can be finely adjusted based on the preset first supply angle (θ ₁ ) and the second supply angle (θ ₂ ).

7 is a view showing an atomic layer deposition apparatus according to another embodiment of the present invention.

This embodiment differs only in the configuration of connecting the pumping module and the exhaust passage, and in other configurations, it is the same as the configuration of the atomic layer deposition apparatus of FIGS. do.

Referring to FIG. 7, the first pumping module 650 and the second pumping module 660 of the atomic layer deposition apparatus 1 according to this embodiment are source gases of the reaction gas supply modules 210, 220, and 230 Both the first exhaust passage and the second exhaust passage of the supply modules 310 and 320 are connected.

In addition, the atomic layer deposition apparatus 1 includes a first variable valve unit 810 disposed between a first pumping module 650 and the first exhaust passage, a first pumping module 650 and the second exhaust A second variable valve unit 820 disposed between the flow passages, a fourth variable valve unit 840 disposed between the second pumping module 660 and the first exhaust passage, and a second pumping module 660 And a variable valve unit including a third variable valve unit 830 disposed between the second exhaust passages.

And, the exhaust pressure provided by each of the first pumping module 650 and the second pumping module 660 is not variable, and any one of the pumping modules of the first pumping module 650 and the second pumping module 660 The exhaust pressure of may be greater than the exhaust pressure of the other pumping module. For example, the first pumping module 650 may be formed of a high pressure compressor, and the second pumping module 660 may be formed of a low pressure compressor.

That is, in the present embodiment, in the state in which the exhaust pressure provided by the first pumping module 650 and the second pumping module 660 is fixed, the variable valve units 810, 820, 830, and 840 of the variable valve unit ) To provide different exhaust pressures in the first exhaust flow path and the second exhaust flow path according to the transport direction of the substrate S.

For example, in the first deposition mode, the second variable valve unit 820 and the fourth variable valve unit 840 are opened so that the high pressure first pumping module 650 is connected to the second exhaust flow path. And, the low pressure second pumping module 660 is connected to the first exhaust flow path. Then, the first variable valve unit 810 and the third variable valve unit 830 are closed to allow the low pressure second pumping module 660 and the second exhaust flow path to be cut off, and the high pressure first pumping module ( 650) and the first exhaust flow path are disconnected.

Therefore, in the first deposition mode, the first exhaust pressure P ₁ of the first exhaust passage is formed smaller than the second exhaust pressure P ₂ of the second exhaust passage.

Conversely, in the second deposition mode, the first variable valve unit 810 and the third variable valve unit 830 are opened, so that the high pressure first pumping module 650 is connected to the first exhaust flow path, The low pressure second pumping module 660 is connected to the second exhaust flow path. Then, the second variable valve unit 820 and the fourth variable valve unit 840 are closed to allow the low pressure second pumping module 660 and the first exhaust flow path to be cut off, and the high pressure first pumping module ( 650) and the second exhaust flow path are disconnected.

According to this embodiment, by operating the pumping modules (650, 660) in a state in which the exhaust pressure provided by the pumping modules (650, 660) is fixed, it improves the operational reliability of the pumping modules (650, 660), simpler There is an advantage that can be used to the structure of the pumping module (650, 660).

Meanwhile, the source gas g _s and the reaction in the first exhaust pipe connected to the first exhaust flow path and the second exhaust pipe connected to the second exhaust flow path of the atomic layer deposition apparatus 1 according to the present embodiment Gas g _r is mixed and transferred to the pumping modules 650 and 660.

When the source gas (g _s ) and the reaction gas (g _r ) are mixed, the exhaust efficiency may be lowered by the condensed reactants of the source gas (g _s ) and the reaction gas (g _r ), and the atomic layer deposition apparatus ( 1) includes trap portions 910 and 920 for suppressing condensation of the source gas g _s and the reaction gas g _r .

The trap parts 910 and 920 include a first trap part 910 and a second trap part 920.

The first trap unit 910 is disposed between the first pumping module 650 and the first variable valve 810 and the second variable valve 820, and the first variable valve 810 or the second variable valve 820 ) To suppress the condensation of the reaction gas (g _r ) and the source gas (g _s ) flowing to the first pumping module 650.

The second trap portion 920 is disposed between the second pumping module 660 and the third variable valve 830 and the fourth variable valve 840, and the third variable valve 830 or the fourth variable valve ( Condensation of the reaction gas (g _r ) and the source gas (g _s ) flowing to the second pumping module 660 through 840 is suppressed.

As described above, although the embodiments have been described by a limited embodiment and drawings, those skilled in the art can make various modifications and variations from the above description. For example, the described techniques are performed in a different order than the described method, and/or the components of the described system, structure, device, circuit, etc. are combined or combined in a different form from the described method, or other components Alternatively, even if replaced or substituted by equivalents, appropriate results can be achieved. Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

DESCRIPTION OF SYMBOLS 1 Atomic layer deposition apparatus 100 Substrate transfer part
110, 120, 130: gas supply
210, 220, 230: reactive gas supply module 310, 320: source gas supply module
410, 420, 430, 440, 450, 460: purge gas supply module
510: purge gas supply pipe 520: reactive gas supply pipe
530: source gas supply pipe
610, 620, 630, 640, 650, 660: pumping module

Claims (20)

In the atomic layer deposition apparatus for forming an atomic layer on a substrate,
A substrate transfer portion on which the substrate is seated and transferring the substrate in a first direction and a second direction different from the first direction; And
It is disposed above the substrate transferred by the substrate transfer unit, and between a source gas supply module for supplying a source gas, a reaction gas supply module for supplying a reaction gas, and the source gas supply module and the reaction gas supply module A gas supply unit including a purge gas supply module disposed; And
It includes; a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reaction gas supply pipe connecting the reaction gas supply module and the reaction gas supply source,
At least one of the source gas supply module and the reaction gas supply module may vary a gas supply direction to the substrate according to the substrate transport direction of the substrate transfer part,
A plasma electrode part is provided on at least one of the source gas supply pipe and the reaction gas pipe to provide a voltage to the source gas or the reaction gas flowing toward the gas supply portion to plasma the source gas or the reaction gas. And
The plasma electrode part includes a first electrode connected to the source gas supply pipe or the reaction gas supply pipe and a second electrode provided in the source gas supply pipe or the reaction gas supply pipe,
One of the first electrode and the second electrode of the plasma electrode part is connected to the RF oscillator, the other is a ground electrode,
The second electrode, the atomic layer deposition apparatus, characterized in that extending in a direction parallel to the flow direction of the source gas or the reaction gas flowing in the source gas supply pipe or the reaction gas supply pipe. According to claim 1,
At least one of the source gas supply module and the reaction gas supply module,
And a gas supply nozzle body in which a first end gas supply flow path and a second end gas supply flow path are connected to one of the source gas supply pipe and the reaction gas supply pipe, and wherein the first end gas supply flow path is Orthogonal to a plane on which the substrate is formed and supplying any one of the source gas and the reaction gas to the substrate in a direction inclined at a first supply angle preset with respect to a third direction toward the substrate from the gas supply unit,
The first end gas supply flow path and the second end gas supply flow path are atomic layer deposition apparatus, characterized in that activated alternately according to the transfer direction of the substrate. According to claim 2,
The second end gas supply flow path supplies any one of the source gas and the reaction gas to the substrate in a direction inclined at a second predetermined supply angle relative to the third direction orthogonal to the plane on which the substrate is formed. and,
The first gas supply direction by the first end gas supply flow path includes a first horizontal supply vector component parallel to the first direction and a first vertical supply vector component parallel to the third direction, and the second end gas supply The second gas supply direction by the flow path includes a second horizontal supply vector component parallel to the second direction and a second vertical supply vector component parallel to the third direction, wherein the first vertical supply vector component and the second vertical supply Atomic layer deposition apparatus characterized in that the vector component is the same. According to claim 3,
The first end gas supply flow passage and the second end gas supply flow passage each include a first nozzle unit formed to incline at the first supply angle and a second nozzle unit formed to incline at the second supply angle. Atomic layer deposition apparatus characterized in that. According to claim 3,
When the substrate transfer portion transfers the substrate in the first direction, the second end gas supply flow path is activated, and when the substrate transfer portion transfers the substrate in the second direction, the first end gas supply flow path is Atomic layer deposition apparatus characterized in that it is activated. According to claim 2,
At least one of the source gas supply module and the reaction gas supply module, a valve unit for selectively supplying any one of the source gas and the reaction gas to the first end gas supply passage and the second end gas supply passage Atomic layer deposition apparatus comprising a part. The method of claim 6,
The valve unit unit, the atomic layer deposition apparatus comprising a first end valve unit disposed on the first end gas supply flow path and a second end valve unit disposed on the second end gas supply flow path. The method of claim 6,
The valve unit unit is an atomic layer deposition apparatus characterized in that it is installed at a point where the first end gas supply flow path and the second end gas supply flow path branch from any one of the source gas supply pipe and the reaction gas supply pipe. In the atomic layer deposition apparatus for forming an atomic layer on a substrate,
A substrate transfer portion on which the substrate is seated and transferring the substrate in a first direction and a second direction different from the first direction; And
It is disposed above the substrate transferred by the substrate transfer unit, and between a source gas supply module for supplying a source gas, a reaction gas supply module for supplying a reaction gas, and the source gas supply module and the reaction gas supply module A gas supply unit including a purge gas supply module disposed; And
It includes; a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reaction gas supply pipe connecting the reaction gas supply module and the reaction gas supply source,
At least one of the source gas supply module and the reaction gas supply module may vary a gas supply direction to the substrate according to the substrate transport direction of the substrate transfer part,
At least one of the source gas supply module and the reaction gas supply module is spaced apart from each other with an end gas supply flow path for supplying any one of the source gas and the reaction gas, and the end gas supply flow path therebetween, And a first exhaust flow path and a second exhaust flow path for discharging excess gas between the gas supply part and the substrate to the outside,
The first exhaust pressure of the first exhaust passage and the second exhaust pressure of the second exhaust passage are independent of each other,
When the substrate transfer part transfers the substrate in the first direction, the first exhaust pressure provided by the first exhaust flow path spaced apart in the first direction based on the second exhaust flow path is the second Less than the second exhaust pressure provided by the exhaust passage,
When the substrate transfer unit transfers the substrate in the second direction, the first exhaust pressure provided by the first exhaust flow path is greater than the second exhaust pressure provided by the second exhaust flow path,
A pumping module unit including a first pumping module connected to the first exhaust channel and the second exhaust channel, and a second pumping module connected to the first exhaust channel and the second exhaust channel; and,
A first variable valve unit disposed between the first pumping module and the first exhaust passage, a second variable valve unit disposed between the first pumping module and the second exhaust passage, and the second pumping module It further includes a variable valve unit including a third variable valve unit disposed between the first exhaust flow path, and a fourth variable valve unit disposed between the second pumping module and the second exhaust flow path,
The exhaust pressure provided by each of the first pumping module and the second pumping module is not variable, and the exhaust pressure of any one of the first pumping module and the second pumping module is different from the other pumping module Is formed larger than the exhaust pressure,
When the first variable valve and the third variable valve are opened, the second variable valve and the fourth variable valve are closed,
An atomic layer deposition apparatus characterized in that when the first variable valve and the third variable valve are closed, the second variable valve and the fourth variable valve are opened. delete According to claim 1,
At least one of the source gas supply module and the reaction gas supply module is spaced apart from each other with an end gas supply flow path for supplying any one of the source gas and the reaction gas, and the end gas supply flow path therebetween, And a first exhaust flow path and a second exhaust flow path for discharging excess gas between the gas supply part and the substrate to the outside,
The first exhaust pressure of the first exhaust passage and the second exhaust pressure of the second exhaust passage are independent of each other,
When the substrate transfer part transfers the substrate in the first direction, the first exhaust pressure provided by the first exhaust flow path spaced apart in the first direction based on the second exhaust flow path is the second Less than the second exhaust pressure provided by the exhaust passage,
When the substrate transfer unit transfers the substrate in the second direction, the first exhaust pressure provided by the first exhaust flow path is greater than the second exhaust pressure provided by the second exhaust flow path,
A pumping module unit including a first pumping module connected to the first exhaust channel and a second pumping module connected to the second exhaust channel; And
It further includes an exhaust pipe portion including a first exhaust pipe connecting the first pumping module and the first exhaust passage, and a second exhaust pipe connecting the second pumping module and the second exhaust passage;
The first pumping module provides the first exhaust pressure to the first exhaust passage, and the second pumping module provides the second exhaust pressure to the second exhaust passage, and the first pumping module and the first 2 The pumping module is characterized in that the first exhaust pressure and the second exhaust pressure is variable according to the transfer direction of the substrate to provide the first exhaust passage and the second exhaust passage, characterized in that the atomic layer deposition apparatus. delete The method of claim 9,
Between the first pumping module and the first variable valve and the second variable valve, suppressing condensation of the reaction gas and the source gas to the first pumping module via the first variable valve or the second variable valve The first trap portion is disposed,
Between the second pumping module and the third variable valve and the fourth variable valve, condensation of the reaction gas and the source gas flowing through the third variable valve or the fourth variable valve to the second pumping module An atomic layer deposition apparatus characterized in that the second trap portion for suppressing the arrangement. delete delete In the atomic layer deposition apparatus for forming an atomic layer on a substrate,
A substrate transfer portion on which the substrate is seated and transferring the substrate in a first direction and a second direction different from the first direction; And
It is disposed above the substrate transferred by the substrate transfer unit, and between a source gas supply module for supplying a source gas, a reaction gas supply module for supplying a reaction gas, and the source gas supply module and the reaction gas supply module A gas supply unit including a purge gas supply module disposed; And
It includes; a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reaction gas supply pipe connecting the reaction gas supply module and the reaction gas supply source,
At least one of the source gas supply module and the reaction gas supply module,
An end gas supply flow path for supplying any one of the source gas and the reaction gas, and spaced apart from each other with the end gas supply flow path interposed therebetween, and for discharging excess gas between the gas supply part and the substrate to the outside It includes a first exhaust passage and a second exhaust passage,
An atomic layer deposition apparatus, characterized in that the first exhaust pressure of the first exhaust flow path and the second exhaust pressure of the second exhaust flow path are independent of each other. The method of claim 16,
At least one of the source gas supply module and the reaction gas supply module,
And a gas supply nozzle body in which the end gas supply flow path connected to one of the source gas supply pipe and the reaction gas supply pipe is formed,
The end gas supply flow path includes a first end gas supply flow path and a second end gas supply flow path,
The first end gas supply flow passage is orthogonal to the plane on which the substrate is formed, and any of the source gas and the reaction gas in a direction inclined at a first predetermined supply angle with respect to a third direction from the gas supply portion toward the substrate. Supply one to the substrate,
The second end gas supply flow path supplies any one of the source gas and the reaction gas to the substrate in a direction inclined at a second predetermined supply angle relative to the third direction orthogonal to the plane on which the substrate is formed. and,
The first end gas supply flow path and the second end gas supply flow path are atomic layer deposition apparatus, characterized in that activated alternately according to the transfer direction of the substrate. In the atomic layer deposition method for depositing an atomic layer on a substrate using an atomic layer deposition apparatus,
A substrate mounting step of mounting the substrate in a first direction and a substrate transfer unit for transferring in a second direction different from the first direction;
A first deposition mode step of forming an atomic layer with respect to the substrate while transferring the substrate in the first direction while the substrate is mounted on the substrate transfer unit; And
The second deposition mode step of forming an atomic layer with respect to the substrate while transferring the substrate in the second direction while the substrate is mounted on the substrate transfer unit; includes,
In a deposition region formed between a gas supply module for supplying a reaction gas or a source gas to the substrate and the substrate, a first exhaust gas located in the first direction based on the center of the deposition region and exhausting residual gas The first exhaust pressure of the region and the second exhaust pressure of the second exhaust region positioned in the second direction with respect to the reference of the deposition region are formed differently,
In the second deposition mode step, the gas supply module comprises: a first having a first vertical supply vector component parallel to the third direction and a first horizontal supply vector component parallel to the first direction toward the substrate. Supplying the source gas or the reaction gas to the substrate in a gas supply direction,
In the first deposition mode step, the gas supply module may supply the source gas to the substrate in a second gas supply direction having a first horizontal supply vector component and a second horizontal supply vector component parallel to the second direction. Atomic layer deposition method characterized in that to supply the reaction gas. The method of claim 18,
In the first deposition mode step, the second exhaust pressure is greater than the first exhaust pressure,
In the second deposition mode step, the second exhaust pressure is less than the first exhaust pressure, atomic layer deposition method. delete

Images