KR102084283B1 - Composition for electric insulation material, electric insulation film manufactured by using the composition and circuit board and electronic device comprising the electric insulation film - Google Patents

Abstract

The present specification relates to a composition for an electric insulation material, an electric insulation film manufactured using the same, a circuit board including the electric insulation film, and an electronic device including the electric insulation film.

Description

COMPOSITION FOR ELECTRIC INSULATION MATERIAL, ELECTRIC INSULATION FILM MANUFACTURED BY USING THE COMPOSITION AND CIRCUIT BOARD AND ELECTRONIC DEVICE COMPRISING THE ELECTRIC INSULATION FILM}

The present disclosure relates to a composition for an electric insulation material, an electric insulation film manufactured using the same, a circuit board including the electric insulation film, and an electronic device including the electric insulation film.

Porous organometallic particles have a plurality of pores formed by a three-dimensional crystal network in which metal ions are coordinated to an organic compound.

Analysis of properties such as the dimension of pores, volume of pores, shape of pores, surface area and skeletal stability of porous organometallic particles has been actively conducted.

There is also increasing interest in the possibility of applying to various fields using porous organometallic particles. In order to apply the porous organometallic particles to various fields, it is easy to control the physical properties for the specificity of each field, and a certain yield is required considering the synthesis method and cost that can be applied in the bulk scale rather than the lab scale.

In accordance with this need, the present inventors have conducted a study for applying porous organometallic particles to an electrically insulating film.

Japanese Laid-Open Patent Publication No. 2003-332738

The present specification is to provide an electronic device comprising a composition for an electrical insulation material, an electrical insulation film prepared using the same, a circuit board including the electrical insulation film and an electrical insulation film.

The present specification includes a porous organometallic particle having a dielectric constant (k) of 2 or less, wherein the metal ion of the porous organometallic particle is an ion of a metal selected from the group consisting of Groups 1 and 2 of the periodic table. To provide.

In addition, the present specification includes a porous organometallic particle having a dielectric constant (k) of 2 or less, and in the atmosphere having a relative humidity of 5%, to provide a composition for an electrical insulation material that maintains the form of pores of the porous organometallic particle. do.

In addition, the present specification provides an electrical insulation film made of the composition for the electrical insulation material.

In addition, the present specification includes a porous organometallic particle having a dielectric constant (k) of 2 or less, wherein the metal ion of the porous organometallic particle is an ion of a metal selected from metals of Groups 1 and 2 of the periodic table. To provide.

In addition, the present disclosure provides a circuit board including the electrical insulating film.

In addition, the present disclosure provides an electronic device comprising the electrically insulating film.

The electrical insulation film prepared according to the present specification has an advantage of excellent insulation.

The electrical insulation film prepared according to the present specification has a stable advantage against moisture or heat.

Hereinafter, the present specification will be described in detail.

The present specification includes a porous organometallic particle having a dielectric constant (k) of 2 or less, wherein the metal ion of the porous organometallic particle is an ion of a metal selected from the group consisting of Groups 1 and 2 of the periodic table. To provide. In this case, there is an advantage to lower the dielectric constant.

The lower limit of the dielectric constant of the porous organometallic particle is not particularly limited, but the lower the lower limit, the better. The lower limit of the dielectric constant of the porous organometallic particle may be more than 1, specifically, more than 1 and less than 2.

The dielectric constant of the porous organometallic particles may be 1 or more and 2 or less. In this case, there is an advantage of having excellent insulation.

The present specification includes porous organometallic particles having a dielectric constant (k) of 2 or less, wherein the metal ions of the porous organometallic particles are ions of a metal selected from the group consisting of Groups 1 and 2 of the periodic table, and have a relative humidity of 5%. It provides a composition for an electrical insulation material is maintained in the form of pores of the porous organometallic particles in a phosphorus atmosphere.

Specifically, the metal ions of the porous organometallic particles may be maintained in the form of pores of the porous organometallic particles even when exposed to an atmosphere of 25% relative humidity of 5% within 1 hour.

In the present specification, the shape of the pores of the porous organometallic particles is maintained so that the pores are not collapsed and the pores are not removed. This may mean that the change in surface area is within 10% after exposure to an atmosphere having a relative humidity of 5%.

In addition, in this specification, the shape of the pores of the porous organometallic particles means that the characteristic peak of the structure is maintained in PXRD (Powder X-Ray Diffraction) even after exposure to an atmosphere having a relative humidity of 5%.

The present specification includes a porous organometallic particle having a dielectric constant (k) of 2 or less, and provides a composition for an electrical insulation material in which a pore of the porous organometallic particle is maintained in an atmosphere having a relative humidity of 5%.

The metal ions of the porous organometallic particles may include ions of a metal selected from the group consisting of Groups 1 and 2 of the periodic table. Specifically, the metal ion of the porous organometallic particles may include at least one metal ion selected from Li, Na, K, Rb, Sc, Fr, Be, Mg, Ca, Sr, Ba, and Ra. More specifically, the metal ions of the porous organometallic particles are Li ⁺ , Na ⁺ , K ⁺ , Rb ⁺ , Cs ⁺ , Fr ⁺ , Be ^{2 +} , Mg ^{2 +} , Ca ^{2 +} , Sr ^{2 +} , Ba ^{2 +} And Ra ²⁺ .

Due to the development of semiconductors and electronic products, miniaturization and high speed of line width are one of the major issues in the electronic industry.

In particular, line width miniaturization is the fastest technological field, and the biggest problem caused by line width miniaturization is that heat generation occurs due to an increase in crosstalk between adjacent circuits and leakage current due to a decrease in insulation performance.

To address this, there is an increasing demand for materials having a high level of insulation.

Low-insulating fluoro-based polymers, fluorine-containing silicon-based materials, pores that can form pores, and polymers having pores, zeolites or mesoporous silica ( Attempts have been made to lower the dielectric constant using mesoporous silica. In this case, the dielectric constant may be lowered to a certain degree, but the pore size is so large that there is a problem in mechanical strength, there are a lot of steps to be synthesized, there is a problem that is not suitable for commercialization.

Recently, the possibility of applying a metal-organic framework (MOF), which is one of porous materials, as a low dielectric constant material has been considered. However, only the results of low dielectric constants are available through simulation rather than actual application examples. .

In addition, when the porous organic metal particles are selected as the insulating material by selecting metal ions other than the Group 1 and Group 2 metals from the periodic table, the porous organic metal particles made of the metal ions other than the Group 1 and Group 2 metals Since the pores formed in the particles are not stable to moisture or heat, they do not maintain their shape and collapse.

On the other hand, the porous organometallic particles of the present specification has a dielectric constant of 2 or less, excellent in insulation, and has a stable advantage against moisture or heat.

The porous organometallic particles may be porous particles in which metal ions and organic ligands are coordinated.

The porous organometallic particle may be a metal organic framework (MOF) having a plurality of pores formed of a three-dimensional crystal network in which metal ions are coordinated to an organic ligand.

The metal organic structure has various three-dimensional crystal structures according to the type of metal ions and organic ligands, the molar ratio, and the like, and the particles may be expanded indefinitely if metal ions and organic ligands are continuously supplied according to the structure.

The organic ligand refers to an organic compound that is coordinated with the metal ion while surrounding the metal ion. The organic ligand has at least one non-covalent electron pair for coordinating with a metal ion, and an atom having a non-covalent electron pair directly coordinating with a metal ion in the organic ligand is called a ligand atom, and two of the organic ligands Those having the above ligand atoms are called multidentate ligands or chelate ligands.

The organic ligand is not particularly limited as long as it can coordinate with a metal ion.

The organic ligand may have one or more functional groups capable of forming coordinating bonds, for example, the functional group may be -CO ₂ H, -CS ₂ H, -NO ₂ , -B (OH) ₂ , -SO ₃ H , -Si (OH) ₃ , -Ge (OH) ₃ , -Sn (OH) ₃ , -Sn (SH) ₄ , -Ge (SH) ₄ , -Sn (SH) ₃ , -PO ₃ H, -AsO ₃ H, -AsO ₄ H, -P (SH) ₃ , -As (SH) ₃ , -CH (RSH) ₂ , -C (RSH) ₃ , -CH (RNH ₂ ) ₂ , -C (RNH ₂ ) ₃ , -CH (ROH) ₂ , -C (ROH) ₃ , -CH (RCN) ₂ , -C (RCN) ₃ and at least one of a heterocyclic group having at least one of N and O, In this case, R may be a hydrocarbon group having 1 to 5 carbon atoms.

The organic ligand may be an aliphatic compound or an aromatic compound including a functional group capable of one or more coordination bonds.

The aliphatic compound may be a saturated or unsaturated compound, and the aliphatic compound may be a linear, branched or cyclic compound.

The aromatic compound may be an aromatic hydrocarbon compound or a heteroaromatic compound.

For example, the organic ligand may include at least one of a heterocyclic ligand having a nitrogen, a carboxylic acid ligand, a sulfonate ligand, and a phosphonate ligand. Specifically, the organic ligand may include at least one of a monocarboxylic acid ligand, a dicarboxylic acid ligand, a tricarboxylic acid ligand, a tetracarboxylic acid ligand, and an imidazole ligand. More specifically, the organic ligand may include at least one of a benzenetricarboxylate compound, a benzenedicarboxylate compound, an (alkoxycarbonylphenyl) benzoate compound, and an imidazole compound.

More specifically, the organic ligands are trialkyl benzene-1,3,5-tricarboxylate, dialkyl benzene-1,4-dicarboxylate, 4- (4-alkoxycarbonylphenyl) benzoate and alkyl At least one of the imidazoles.

The organic ligands may include at least one of the compounds of Formulas 1 to 3 below.

[Formula 1]

[Formula 2]

[Formula 3]

In the present specification, the hydrocarbon group having 1 to 6 carbon atoms may be an alkyl group, an alkenyl group, an alkynyl group, or a hydrocarbon ring group.

In the present specification, the alkyl may be a linear or branched alkyl group having 1 to 6 carbon atoms, for example, the alkyl group may be a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, or a pentyl group.

In the present specification, the alkenyl group is the remaining atomic group except for one hydrogen in the aliphatic chain-like alkene having a double bond, and the alkynyl group is the remaining atomic group except for one hydrogen in the aliphatic chain-alkyne having a triple bond.

In the present specification, the alkoxy group may be an alkoxy group having 1 to 6 carbon atoms, for example, the alkoxy group may be a methoxy group or an ethoxy group.

In the present specification, the hydrocarbon ring group may be an aliphatic hydrocarbon ring group or an aromatic hydrocarbon ring group.

The pore size of the porous organometallic particles may be 3 nm or less. In this case, there is an advantage of having a high surface area of more than 500m ² / g.

The pore size of the particles can be measured by gas adsorption using nitrogen / argon / carbon dioxide.

The surface area of the porous organometallic particles may be 500 m ² / g or more. In this case, the dielectric constant is low.

The porosity of the particles can be measured by gas adsorption.

Based on the total weight of the electrical insulation composition, the content of the porous organometallic particles may be 10% by weight or more and 90% by weight or less. In this case, there is an advantage in forming a thin film.

The electrical insulating material composition may further include at least one of a solvent, a binder, a dispersant, and a leveling agent.

The kind of the solvent, the binder, the dispersant, and the leveling agent is not particularly limited, and those generally used in the art may be employed.

The present specification provides an electrical insulation film made of the composition for the electrical insulation material.

The present specification includes a porous organometallic particle having a dielectric constant (k) of 2 or less, wherein the metal ion of the porous organometallic particle is an ion of a metal selected from metals of Groups 1 and 2 of the periodic table. do.

The dielectric constant k of the electrical insulation layer may be 3 or less.

The electrically insulating film may cover the entire surface or a part of the substrate or the lower layer according to a purpose, and the electrical insulating film may be a film type or a pattern type as necessary.

In addition, the present disclosure provides a circuit board including the electrical insulating film.

The circuit board may be applied without particular limitation as long as it is a product to which a circuit board requiring an electric insulation film is applied. The circuit board may be a circuit board for semiconductors, a circuit board for transformers, a circuit board for organic light emitting devices, a circuit board for solar cells, or a liquid crystal. It may be a circuit board for a display element.

In addition, the present disclosure provides an electronic device comprising the electrically insulating film.

The electronic device may be a transformer, a light emitting diode, an organic light emitting device, a solar cell, a liquid crystal display, or a cathode ray tube.

Hereinafter, the present specification will be described in more detail with reference to Examples. However, the following examples are merely to illustrate the present specification, but not to limit the present specification.

EXAMPLE

Example 1

As a metal ion precursor, 1.407 g of Mg (NO ₃ ) ₂ 6H ₂ O and 0.336 g of 2,5-Dihydroxyterephthalic acid were dissolved in 135 ml of dimethylformamide (DMF), 9 ml of H ₂ O, and 9 ml of ethanol to prepare a reaction solution.

The prepared solution was placed in a glass container and the lid was sealed and heated to 125 ° C. for 24 hours. After 24 hours, a yellow solid formed on the inner wall of the glass vessel was obtained using a filter paper and washed three times with 30 ml of methanol. After drying in a vacuum oven at 100 ℃ 0.5g of a solid (Mg-MOF) was obtained. In this case, the dielectric constant of the solid was 1.22.

Comparative Example 1

As a metal ion precursor, 0.1188 g of Co (NO ₃ ) ₂ 6H ₂ O and 0.0241 g of 2,5-dihydroxyterephthalic acid were dissolved in 3.3 ml of DMF, 3.3 ml of H ₂ O, and 3.3 ml of ethanol to prepare a reaction solution. The prepared solution was placed in a glass container and the lid was sealed and heated to 100 ° C. for 24 hours. After 24 hours a yellow solid formed on the inner wall of the glass vessel was obtained using a filter paper and washed three times with 30 ml of methanol. 0.03 g of solid (Co-MOF) was obtained after drying in a vacuum oven at 100 ° C. At this time, the dielectric constant of the solid was 4.170.

Experimental Example 1

1 g of solids obtained in Example 1 and Comparative Example 1, respectively, and 4 g of 25% polyamic acid NMP (N-methylpyrrolidone) solution were mixed, followed by stirring in an ultrasonic bath for 30 minutes. The stirred solution was coated on a release film using a Mayer Bar, and then heated at 250 ° C. for 30 minutes. After heating, the film formed from the release film was peeled off, and the dielectric constant at 10 GHz / 5 GHz of the peeled film was measured. The measurement method was a circular electrode attached to the top and bottom of the film, respectively, and used the 8571E Spectrometer of Agilent Technologt.

Dielectric constant of film Film thickness Example 1 (Mg-MOF) 2.62 22 μm Comparative Example 1 (Co-MOF) 3.08 27 μm

Claims (13)

A porous organometallic particle having a dielectric constant (k) of 2 or less,
The porous organometallic particle is a metal organic framework (MOF) having a plurality of pores formed of a three-dimensional crystal network in which metal ions are coordinated to an organic ligand,
Metal ion of the porous organometallic particles is an electrical insulation composition for the ion of a metal selected from the metal consisting of Group 1 and Group 2 of the periodic table. A porous organometallic particle having a dielectric constant (k) of 2 or less,
The porous organometallic particle is a metal organic framework (MOF) having a plurality of pores formed of a three-dimensional crystal network in which metal ions are coordinated to an organic ligand,
The composition for electrical insulation material is maintained in the form of pores of the porous organometallic particles in an atmosphere of 5% relative humidity. delete The composition of claim 1 or 2, wherein the pore size of the porous organometallic particles is 3 nm or less. The composition of claim 1, wherein the form of pores of the porous organometallic particles is maintained in an atmosphere having a relative humidity of 5%. The composition of claim 1 or 2, wherein the organic ligand of the porous organometallic particle includes at least one of a heterocyclic ligand, a carboxylic acid ligand, a sulfonate ligand, and a phosphonate ligand. The composition according to claim 1 or 2, wherein the content of the porous organometallic particles is 10 wt% or more and 90 wt% or less based on the total weight of the composition for electrical insulation. The composition for electrical insulation according to claim 1 or 2, wherein the composition for electrical insulation further comprises at least one of a solvent, a binder, a dispersant, and a leveling agent. Electrical insulation film made of the composition for electrical insulation of claim 1 or 2. A porous organometallic particle having a dielectric constant (k) of 2 or less,
The porous organometallic particle is a metal organic framework (MOF) having a plurality of pores formed of a three-dimensional crystal network in which metal ions are coordinated to an organic ligand,
The metal ion of the porous organometallic particles is an electric insulation film of the metal selected from the group consisting of Group 1 and Group 2 of the periodic table. The electrical insulation film according to claim 10, wherein the dielectric constant k of the electrical insulation film is 3 or less. A circuit board comprising the electrical insulating film of claim 10. An electronic device comprising the electrical insulating film of claim 10.