JPS62247522A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS62247522A JPS62247522A JP9028286A JP9028286A JPS62247522A JP S62247522 A JPS62247522 A JP S62247522A JP 9028286 A JP9028286 A JP 9028286A JP 9028286 A JP9028286 A JP 9028286A JP S62247522 A JPS62247522 A JP S62247522A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- film
- pattern
- aluminum alloy
- sog
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 229920002050 silicone resin Polymers 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 13
- 238000000059 patterning Methods 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 3
- 229910052731 fluorine Inorganic materials 0.000 abstract description 3
- 239000011737 fluorine Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 238000009832 plasma treatment Methods 0.000 abstract description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［概要］
多層レジスト膜パターンの中間層とした有機シリコン樹
脂膜を、酸素プラズマ処理して、その上にレジスト膜パ
ターンを形成する。そうすると、加熱してキュアさせる
必要がなく、加熱による他材料の変質が防止される。DETAILED DESCRIPTION OF THE INVENTION [Summary] An organic silicon resin film serving as an intermediate layer of a multilayer resist film pattern is treated with oxygen plasma to form a resist film pattern thereon. In this case, there is no need to heat and cure the material, and deterioration of other materials due to heating is prevented.
［産業上の利用分野］
本発明は半導体装置の製造方法に係り、特に、多層レジ
スト膜パターンの形成方法に関する。[Industrial Field of Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for forming a multilayer resist film pattern.
ＩＣなど、半導体装置の製造方法において、重要なプロ
セスにリソグラフィ技術があり、ＩＣの高微細化・高集
積化の背景にはりソグラフィ技術の進歩が大きく貢献し
ている。Lithography technology is an important process in the manufacturing method of semiconductor devices such as ICs, and progress in lithography technology has greatly contributed to the miniaturization and high integration of ICs.
しかし、リソグラフィ技術を用いたパターン形成には、
容易にエツチングできて、高精度にパターンニングでき
ることが望まれている。However, pattern formation using lithography technology requires
It is desired that the material can be easily etched and patterned with high precision.
［従来の技術と発明が解決しようとする問題点］さて、
従来、段差部にレジスト膜パターンを形成すると、凹部
と凸部とではレジスト膜の膜厚が異なり、これを露光・
現像すれば凹部と凸部とのパターン幅が違ってくる等、
高精度にパターンニングできない問題があった。即ち、
両方を同時に露光すると、凹部上の膜厚の厚いレジスト
膜部分は露光不足になって、現像すればレジスト膜パタ
ーンの幅が狭くなり、凸部上の膜厚の薄いレジスト膜部
分は露光過度になって、現像すればレジスト膜パターン
の幅が広くなる。第２図（ａ）および（ｂ）はそれを示
す平面図と断面図で、段差のある半導体基板１上に形成
したネガレジスト膜パターン２を例示している。[Problems to be solved by conventional technology and invention] Now,
Conventionally, when a resist film pattern is formed on a stepped part, the thickness of the resist film differs between the concave part and the convex part.
If you develop it, the pattern width of the concave and convex parts will be different, etc.
There was a problem that it was not possible to pattern with high precision. That is,
If both are exposed at the same time, the thicker resist film parts on the concave parts will be underexposed, and when developed, the width of the resist film pattern will become narrower, and the thinner resist film parts on the convex parts will be overexposed. Therefore, when developed, the width of the resist film pattern becomes wider. FIGS. 2(a) and 2(b) are a plan view and a cross-sectional view illustrating a negative resist film pattern 2 formed on a semiconductor substrate 1 having steps.
詳しくは、露光波長とレジスト膜厚とが関連して、パタ
ーン幅は一定しないが、概念的には上記に説明したよう
に、レジスト膜パターンの幅がその膜厚に比例して変わ
るものである。Specifically, the pattern width is not constant due to the relationship between the exposure wavelength and the resist film thickness, but conceptually, as explained above, the width of the resist film pattern changes in proportion to its film thickness. .
従って、段差のある部分には、例えば、３層のレジスト
膜パターンを形成するパターンニング方法が考案された
。第３図は段差のある半導体基板１上にアルミニウム合
金膜３を被着し、その上に３層レジスト膜４．５．６の
パターンを形成した工程断面を示している。即ち、段差
ある半導体基板１上のアルミニウム合金膜３をパターン
ニングするため、その直上に、平坦化するためのレジス
ト膜４を平坦になるまで厚（塗布し、更に、その上にレ
ジスト膜５を被着している。そのレジスト膜５は、レジ
スト膜４とはエツチング比が大きく異なる材質の膜、例
えば、有機シリコン樹脂（スピンオングラス：５ＯＧ）
膜を被着する。次いで、最上層のレジスト膜６は微細パ
ターンの形成できる高感度・高解像度のレジストを塗布
する。Therefore, a patterning method has been devised in which, for example, a three-layer resist film pattern is formed on the stepped portion. FIG. 3 shows a cross section of a step in which an aluminum alloy film 3 is deposited on a semiconductor substrate 1 having a step, and a pattern of three-layer resist films 4, 5, and 6 is formed thereon. That is, in order to pattern the aluminum alloy film 3 on the semiconductor substrate 1 with steps, a resist film 4 for planarization is coated on the aluminum alloy film 3 until it becomes flat. The resist film 5 is made of a material whose etching ratio is significantly different from that of the resist film 4, for example, an organic silicon resin (spin-on glass: 5OG).
Deposit the membrane. Next, the uppermost resist film 6 is coated with a high-sensitivity, high-resolution resist capable of forming fine patterns.
そして、まず、レジスト膜６のパターンを形成した後、
そのレジスト膜６のパターンをマスクにして、ＳＯＧ膜
をエツチングし、更に、ＳＯＧ膜をマスクにしてレジス
ト膜４をエツチングしてパターンを転写する。ＳＯＧ膜
は弗素系ガスでエツチングされ、そのＳＯＧ膜をマスク
としてレジスト膜４は酸素ガスでエツチングされてパタ
ーンが転写されるが、下層のレジスト膜４がパターンニ
ングされると、最上層のレジスト膜６は殆ど消滅してな
くなることが多い。Then, first, after forming a pattern of the resist film 6,
Using the pattern of the resist film 6 as a mask, the SOG film is etched, and further, the resist film 4 is etched using the SOG film as a mask to transfer the pattern. The SOG film is etched with fluorine-based gas, and using the SOG film as a mask, the resist film 4 is etched with oxygen gas to transfer the pattern. When the lower resist film 4 is patterned, the uppermost resist film 6 often disappears.
このように、多層レジスト膜パターンを形成する場合に
は、エツチング比の異なる材質のものを介在させており
、その中間層として有機シリコン樹脂が用いられている
。In this manner, when forming a multilayer resist film pattern, materials having different etching ratios are interposed, and an organic silicone resin is used as the intermediate layer.
ところが、このようなＳＯＧ膜を中間層に用いる場合、
ＳＯＧ膜を被着（塗布）した後、２００〜３００℃で加
熱処理してキュア（固化）させているが、この加熱処理
をおこなうと、他の材料、例えば、アルミニウム合金膜
が変質してエツチングされ難くなり、高精度にパターン
ニングできないと云う問題がある。However, when using such an SOG film as an intermediate layer,
After the SOG film is deposited (coated), it is cured (solidified) by heat treatment at 200 to 300°C, but when this heat treatment is performed, other materials, such as aluminum alloy films, are altered and etched. There is a problem that patterning becomes difficult and highly accurate patterning cannot be performed.
本発明は、このような問題点を解消させて、高精度にパ
ターンニングできるレジスト膜パターンの形成方法を提
案するものである。The present invention solves these problems and proposes a method for forming a resist film pattern that enables highly accurate patterning.
［問題点を解決するための手段］
その目的は、中間層として被着した有機シリコン樹脂膜
を、酸素プラズマ処理する工程が含まれる半導体装置の
製造方法によって達成される。[Means for Solving the Problems] The object is achieved by a method for manufacturing a semiconductor device that includes a step of treating an organic silicon resin film deposited as an intermediate layer with oxygen plasma.
［作用コ
即ち、本発明は、中間層とした有殻シリコン樹脂膜を、
酸素プラズマ処理して、その上にレジスト膜パターンを
形成する。そうすると、加熱処理することなく、上層の
レジスト膜パターンが形成できて、加熱による他材料の
変質が防止される。[Operation: In other words, the present invention uses a shelled silicone resin film as an intermediate layer,
Oxygen plasma treatment is performed to form a resist film pattern thereon. In this way, the upper resist film pattern can be formed without heat treatment, and other materials are prevented from deteriorating in quality due to heating.
［実施例］ 以下、図面を参照して実施例によって詳細に説明する。[Example] Hereinafter, embodiments will be described in detail with reference to the drawings.
第１図（ａｌ〜（ｄ）は本発明にかかる３層レジスト膜
パターンによる形成方法の工程順断面図を示している。FIGS. 1A to 1D show step-by-step cross-sectional views of a method for forming a three-layer resist film pattern according to the present invention.
まず、同図（ａｌに示すように、段差のある半４体基板
１１上にアルミニウム合金膜１３を被着し、その上に平
坦化用のレジスト膜１４（膜厚」〜３μｍ）を塗布して
、更に、その上にＳＯＧ膜１５（膜厚数千人程度）を塗
布する。そして、このＳＯＧ膜１４を酸素プラズマに曝
して、その表面を固化させる。このような酸素プラズマ
処理すると、その上にレジスト膜１６を塗布しても、レ
ジスト膜１６に含まれた溶剤で、ＳＯＧ膜１５が溶解さ
れることはなくなる。First, as shown in the same figure (al), an aluminum alloy film 13 is deposited on a semi-quad substrate 11 with steps, and a flattening resist film 14 (film thickness of ~3 μm) is applied thereon. Then, an SOG film 15 (with a film thickness of about several thousand layers) is applied thereon.Then, this SOG film 14 is exposed to oxygen plasma to solidify its surface. Even if the resist film 16 is applied thereon, the SOG film 15 will not be dissolved by the solvent contained in the resist film 16.
従って、第１図（′ｂ）に示すように、その上に微細バ
クーン形成用のレジスト膜１６（膜厚１μｍ）を塗布し
、露光、現像して、パターンを形成する。Therefore, as shown in FIG. 1('b), a resist film 16 (thickness: 1 μm) for forming fine bubbles is applied thereon, exposed and developed to form a pattern.
次いで、同図（Ｃ）に示すように、レジスト膜１６をマ
スクにして、ＳＯＧ膜１５を弗素系ガスでエツチングし
てパターンニングし、そのＳＯＧ膜１５をマスクにして
レジスト膜１４を酸素ガスでリアクティブイオンエツチ
ングしてパターンを転写する。この時、レジスト膜１６
はエツチングで消滅してしまうことが多い。Next, as shown in FIG. 2C, using the resist film 16 as a mask, the SOG film 15 is etched and patterned with fluorine gas, and using the SOG film 15 as a mask, the resist film 14 is etched with oxygen gas. Transfer the pattern using reactive ion etching. At this time, the resist film 16
are often eliminated by etching.
次いで、第１図（ｄｌに示すように、そのレジスト膜パ
ターンをマスクにして、アルミニウム合金膜を塩素系ガ
スでエツチングしてパターンニングする。そうすれば、
アルミニウム合金膜は熱処理されていないために、容易
にエツチングされて高精度なアルミニウム合金膜パター
ンが得られる。Next, as shown in FIG. 1 (dl), using the resist film pattern as a mask, the aluminum alloy film is patterned by etching with chlorine gas.
Since the aluminum alloy film is not heat-treated, it can be easily etched to obtain a highly accurate aluminum alloy film pattern.
従って、このような多層レジスト膜パターンの形成方法
によれば、エツチングが容易になって、高精度にパター
ンニングすることができる。Therefore, according to this method of forming a multilayer resist film pattern, etching becomes easy and patterning can be performed with high precision.
上記はアルミニウム合金膜を例として説明したが、熱処
理で変質し易い他の材料膜にも適用できることは云うま
でもない。Although the above description has been made using an aluminum alloy film as an example, it goes without saying that the present invention can also be applied to films made of other materials that are easily altered by heat treatment.
［発明の効果］
以上の説明から明らかなように、本発明によれば多層レ
ジスト膜パターンを用いて、高精度にパターンを形成で
きる利点がある。[Effects of the Invention] As is clear from the above description, the present invention has the advantage of being able to form a pattern with high precision using a multilayer resist film pattern.
第１図（ａｌ〜（ｄ）は本発明にかかる形成方法の形成
工程順断面図、
第２図（ａ）、 （ｂ）は従来の１層のレジスト膜パタ
ーン形成の平面図と断面図、
第３図は従来の３層のレジスト膜パターン形成の断面図
である。
図において、
１．１１は半導体基板、
２．４，５．６はレジスト膜、
３．１３はアルミニウム合金膜、
１４、１６はレジスト膜、
ジはＳＯＧ膜、
を示している。
４４Ｂ月１−ｇ・ひ）セｆ（太りとり形へ′１孝デ悶第
１閃
犯＋、−■、／’ｌ、２＋ Ｌし゛・又ト膜へ・７−ン
めｔす叉１コ第２図
０５十の ３）ｔシレミ−Ｚｌ−ｉそバ７−ンの形賎図
第３図FIGS. 1(al to d) are cross-sectional views in the order of formation steps of the forming method according to the present invention; FIGS. 2(a) and (b) are plan views and cross-sectional views of conventional single-layer resist film pattern formation; Fig. 3 is a cross-sectional view of conventional three-layer resist film pattern formation. In the figure, 1.11 is a semiconductor substrate, 2.4, 5.6 are resist films, 3.13 is an aluminum alloy film, 14, 16 indicates the resist film, ji indicates the SOG film, Figure 2 050-3) Figure 3 Shape of the 7-ring to the membrane
Claims (1)
して有機シリコン樹脂膜を被着し、該有機シリコン樹脂
膜を酸素プラズマ処理する工程が含まれてなることを特
徴とする半導体装置の製造方法。1. A method for manufacturing a semiconductor device, comprising a step of depositing an organic silicone resin film as an intermediate layer and treating the organic silicone resin film with oxygen plasma in the method of forming a multilayer resist film pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9028286A JPS62247522A (en) | 1986-04-18 | 1986-04-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9028286A JPS62247522A (en) | 1986-04-18 | 1986-04-18 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62247522A true JPS62247522A (en) | 1987-10-28 |
Family
ID=13994159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9028286A Pending JPS62247522A (en) | 1986-04-18 | 1986-04-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62247522A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5023204A (en) * | 1988-01-21 | 1991-06-11 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device using silicone protective layer |
| US7488429B2 (en) | 2004-06-28 | 2009-02-10 | Tdk Corporation | Method of dry etching, method of manufacturing magnetic recording medium, and magnetic recording medium |
-
1986
- 1986-04-18 JP JP9028286A patent/JPS62247522A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5023204A (en) * | 1988-01-21 | 1991-06-11 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device using silicone protective layer |
| US7488429B2 (en) | 2004-06-28 | 2009-02-10 | Tdk Corporation | Method of dry etching, method of manufacturing magnetic recording medium, and magnetic recording medium |
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