JPS62237349A - Instrument for measuring distribution of hydrogen ion concentration - Google Patents
Instrument for measuring distribution of hydrogen ion concentrationInfo
- Publication number
- JPS62237349A JPS62237349A JP61081720A JP8172086A JPS62237349A JP S62237349 A JPS62237349 A JP S62237349A JP 61081720 A JP61081720 A JP 61081720A JP 8172086 A JP8172086 A JP 8172086A JP S62237349 A JPS62237349 A JP S62237349A
- Authority
- JP
- Japan
- Prior art keywords
- agar
- substrate
- hydrogen ion
- distribution
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000005669 field effect Effects 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000005259 measurement Methods 0.000 claims description 9
- 229920001817 Agar Polymers 0.000 abstract description 21
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 abstract description 3
- 241000206672 Gelidium Species 0.000 abstract 2
- 235000010419 agar Nutrition 0.000 abstract 2
- 239000008272 agar Substances 0.000 description 19
- 239000002609 medium Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000001139 pH measurement Methods 0.000 description 4
- 239000007793 ph indicator Substances 0.000 description 4
- 241000588724 Escherichia coli Species 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000012258 culturing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 244000005700 microbiome Species 0.000 description 2
- 210000003205 muscle Anatomy 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000209507 Camellia Species 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 239000001888 Peptone Substances 0.000 description 1
- 108010080698 Peptones Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 235000018597 common camellia Nutrition 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 239000001963 growth medium Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000813 microbial effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000019319 peptone Nutrition 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体電界効果型イオンセンサを用いた、寒天
等の表面の水素イオン濃度分布の測定装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an apparatus for measuring hydrogen ion concentration distribution on the surface of agar or the like using a semiconductor field effect ion sensor.
（従来の技術）
寒天は、発光・微生物の分野で培地の固体化の目的で使
用される。液体培地に通常１〜２％程度の寒天を添加処
理することで寒天培地は調整される。このようにしてで
きあがった寒天培地や微生物を培養した後の寒天培地は
固体状であるため水素イオン濃度（以後ｐＨと呼ぶ）を
測定することは困難である。通常、寒天培地のｐＨ測定
はｐＨ指示薬を培地に添加し、ｐＨ指示薬の発色の変化
を観察することにより行なわれる。また近年は、特殊な
ガラス電極を使用したｐＨ測定も行なわれるようになっ
てきたが、個々の微生物コロニーのｐＨや、コロニー周
辺のｐＨ分布を測定することは、前記従来の装置では不
可能である。(Prior Art) Agar is used for the purpose of solidifying a culture medium in the field of luminescence and microorganisms. An agar medium is usually prepared by adding about 1 to 2% agar to a liquid medium. Since the agar medium thus prepared and the agar medium after culturing microorganisms are solid, it is difficult to measure the hydrogen ion concentration (hereinafter referred to as pH). Usually, the pH of an agar medium is measured by adding a pH indicator to the medium and observing changes in the color of the pH indicator. In recent years, pH measurement using special glass electrodes has also begun, but it is impossible to measure the pH of individual microbial colonies or the pH distribution around the colony using the conventional devices described above. be.
（発明が解決しようとする問題点）
前記ｐＨ指示薬を用いる測定方法では、培地自体の色に
よってｐＨ指示薬の発色の観察が妨害されたり、測定に
誤差が生じたりする。また判定が観察による主観である
ための誤差、観察者ごとの個人差が生じやすい。またこ
の場合はｐＨ分布まで測定することは基本的に困難であ
る。(Problems to be Solved by the Invention) In the measurement method using the pH indicator, the color of the medium itself may obstruct observation of the color development of the pH indicator or cause errors in measurement. Furthermore, since the judgment is subjective based on observation, errors and individual differences between observers are likely to occur. Furthermore, in this case, it is basically difficult to measure the pH distribution.
また前記ガラス製ｐＨ電極を用いる方法でも、寒天の局
所的なｐＨ変化に対応できず、同時に多数の領域のｐＨ
測定を行なうことも困難である。Furthermore, even with the method using the glass pH electrode, it is not possible to deal with local pH changes in the agar, and the pH of many regions at the same time cannot be adjusted.
It is also difficult to make measurements.
前記のように、寒天のｐＨ測定自体が困難であるうえに
、ｐＨの局地的な変化・いわばｐＨ分布測定は従来の装
置では不可能であった。As mentioned above, it is difficult to measure the pH of agar itself, and it has been impossible to measure local changes in pH, so to speak, pH distribution using conventional devices.
本発明は、溶液中のイオン濃度を電界効果型トランジス
タの中を流れる電流値に変換して測定する電解効果型イ
オンセンサ（以後ｌ８ＦＥＴと呼ぶ）ゲート領域にあた
る能動領域を水素イオン感受性膜で覆った水素イオン感
受性ｌ５ＦＥＴ（以後ｐＨ−ｌ５ＦＥＴと呼ぶ）を用い
て、前記の様に困難もしくは不可能であった寒天のｐＨ
分布測定を含んだｐＨ測定を容易に迅速に行なえ、且つ
多数の領域のｐＨ変化にも対応できる新規なｐＨ分布測
定装置を提供するものである。The present invention covers the active region corresponding to the gate region of a field-effect ion sensor (hereinafter referred to as 18FET) that measures the ion concentration in a solution by converting it into a current value flowing through a field-effect transistor with a hydrogen ion-sensitive membrane. Using a hydrogen ion-sensitive 15FET (hereinafter referred to as pH-15FET), the pH of agar, which was difficult or impossible as described above, can be adjusted.
The present invention provides a novel pH distribution measuring device that can easily and quickly perform pH measurements including distribution measurements, and can also respond to pH changes in a large number of regions.
（問題を解決するための手段）
本発明によれば、複数の水素イオン感応性半導体電界効
丙型４オンセンサが形成された基板と、被測定物内に挿
入する前記複数のイオンセンサに共通な参照電極と、前
記複数のイオンセンサと接続しｌ１ｌ−のイオンセンサ
からの信号を選択するスイッチ系と、このスイッチ系か
らの信号を測定する測定系とを具備したことを特徴とす
る水素イオン濃度分布測定装置が得られる。(Means for Solving the Problem) According to the present invention, a substrate on which a plurality of hydrogen ion-sensitive semiconductor field effect type 4-on sensors are formed, and a substrate that is common to the plurality of ion sensors inserted into the object to be measured. A hydrogen ion concentration characterized by comprising a reference electrode, a switch system that is connected to the plurality of ion sensors and selects a signal from the ion sensor 11-, and a measurement system that measures the signal from this switch system. A distribution measuring device is obtained.
（作用）
本発明でｐＨ−ｌ５ＦＥＴは、従来のｌ５ＦＥＴのゲー
ト電極が例えば窒化シリコン（Ｓｉ３ＮＪ膜に代表され
る水素イオン感応性膜に覆われた構造を持ち、シリコン
ＩＣの製造技術をそのまま使用し作製することができる
。そのため微小化及び同一基板上の任意の位置に配置す
ることが可能である。前記ｐＨ−ｌ５ＦＥＴを溶液に浸
した際、その溶液のｐＨによって前記ｐＨ−ｌ５ＦＥＴ
中を流れる’ｌＨ流が変化するため、その溶液のｐＨの
値を知ることができる。本発明においては、前記ｐＨＪ
ＳＦＥＴを寒天表面に密着することでも寒天のｐＨの測
定ができ、且つ前記ｐＨ−ｌ５ＦＥＴが密着した微小領
域のｐＨの測定ができるという現象を利用している。ま
たこの場合前記溶液のｐＨの測定と同様に、参照電極が
必要となる。(Function) In the present invention, the pH-15FET has a structure in which the gate electrode of the conventional 15FET is covered with a hydrogen ion-sensitive film such as silicon nitride (Si3NJ film), and the manufacturing technology of silicon ICs can be used as is. Therefore, it is possible to miniaturize and place it at any position on the same substrate.When the pH-15FET is immersed in a solution, the pH-15FET can be fabricated depending on the pH of the solution.
Since the 'lH flow flowing through the solution changes, it is possible to know the pH value of the solution. In the present invention, the pHJ
The pH of the agar can be measured by bringing the SFET into close contact with the surface of the agar, and the pH of the micro region to which the pH-15FET is brought into close contact can be measured. Further, in this case, a reference electrode is required as in the case of measuring the pH of the solution.
同一基板上のｐＨ−ｌ５ＦＥＴの配置は、必要に応じて
一列に並べたり縦横２次元に並べるなど任意の配置をと
ることが可能である。また各このｐＨ−ｌ５ＦＥＴは例
えば１１００ｐ四方程度の大きさで作成することが容易
であり、また信号の取り出し等の配線及びｐＨ−ｌ５Ｆ
ＥＴの選択のためのスイッチ等を同一基板上に設ける場
合でも、例えば２００ｐｍ間隔で縦横２次元にｐＨ−ｌ
５ＦＥＴを配置することが容易である。このため、本発
明装置によれば寒天表面上の例えば２００ｐｍ離れた２
点間のｐＨを別々に測定することが可能となる。The pH-15FETs on the same substrate can be arranged in any arbitrary arrangement, such as in a line or two-dimensionally in a vertical and horizontal direction, as necessary. In addition, each pH-15FET can be easily manufactured with a size of, for example, about 1100p square, and wiring for signal extraction, etc.
Even if a switch for selecting ET is provided on the same substrate, the pH-l value can be adjusted in two dimensions vertically and horizontally at intervals of 200 pm, for example.
It is easy to arrange 5FETs. For this reason, according to the apparatus of the present invention, it is possible to
It becomes possible to measure the pH between points separately.
（実施例）
次に本発明の実施例について、図面を参照して説明する
。第１図は、本発明の一実施例を示す測定装置の模式図
である。被検体である寒天１１の表面に、複数のｐＨ−
ｌ５ＦＥＴが形成された基板１２を密着している。該基
板１２のｐＨ−ｌ５ＦＥＴからの信号は、リード線１３
を経てスイッチマトリックス１４に入り、ここで任意の
ｐＨ−ｌ５ＦＥＴからの信号が選択され電圧測定器１５
へと接続される。また該寒天１１に挿入された参照電極
１６も該電圧測定器１５へと接続される。(Example) Next, an example of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram of a measuring device showing an embodiment of the present invention. A plurality of pH-
The substrate 12 on which the 15FET is formed is closely attached. The signal from the pH-15FET of the substrate 12 is connected to the lead wire 13.
The signal from an arbitrary pH-15FET is selected and sent to the voltage measuring device 15.
connected to. A reference electrode 16 inserted into the agar 11 is also connected to the voltage measuring device 15.
該電圧測定器によって測定されたｐＨの値は、コンピュ
ータ等に送り、データの解析を行なうことも可能である
。The pH value measured by the voltage measuring device can also be sent to a computer or the like for data analysis.
第２図は、ｐＨ−ｌ５ＦＥＴの回路図である。図中スイ
ッチ２１．２２．２４は、第１図のスイッチマトリック
ス１４に設けられたスイッチである。１つのダイオード
２５と１つのｐＨ−ｌ５ＥＦＥＴ２６により、ｐＨ測定
の１つの単位となっている。該ｐＨ−ｌ５ＥＦＥＴ２６
におけるｐＨによる信号を得るためには、該スイッチ２
１且つ２３を閉とすることにより、該ｐＨ−ｌ５ＥＦＥ
Ｔ２６のみで外部測定回路２７と接線され測定可能とな
る。尚、破線２８に囲まれた領域が、第１図に示した基
板１２に形成されている。FIG. 2 is a circuit diagram of the pH-15FET. Switches 21, 22, and 24 in the figure are switches provided in the switch matrix 14 of FIG. One diode 25 and one pH-15EFET 26 constitute one unit of pH measurement. The pH-15EFET26
In order to obtain a signal due to the pH at
By closing 1 and 23, the pH-15EFE
Only T26 is connected to the external measurement circuit 27 and measurement is possible. Note that a region surrounded by a broken line 28 is formed on the substrate 12 shown in FIG.
第３図は、第１図の基板１２の部分平面図であり、平面
状のシリコン基板上にｐＨＪｓＥＦＥＴ及びダイオード
が形成されている。図中３１はｐＨ−ｌ５ＥＰＥＴのド
レイン領域且つダイオードのカソード領域の兼用領域、
３２はｐＰＬＩｓＥＦＥＴのゲート領域、３３はｐＨ−
ｌ５ＥＦＥＴのソース領域、３４はダイオードのアノー
ド領域、３５は高不純物濃度ｐ形ポリシリコン領域であ
る。第４図、第５図、第６図、第７図、第８図は、それ
ぞれ第３図の一点鎖線Ａ−Ａ’、 Ｂ−Ｂ’、 Ｃ−Ｃ
’、 Ｄ−Ｄ’、 Ｅ−Ｅ’におけるｌ折面図で、４１
はｐ形基板、４２は高不純物濃度ｎ形ソース領域、４３
はｎ形ゲート領域、４４は高不純物濃度ｎ形ドレイン及
びカソード領域、４５はｐ形アノード領域、４６は高不
純純物濃度ｐ形ポリシリコン領域、４７は水素イオン感
応性膜、４８は絶縁膜である。図示していないが、前記
高不純物濃度ｎ形ソース領域４２、且つ前記高不純物濃
度ｐ形ポリシリコン領域４６は、基板の末端まで延長さ
れ、第１図で示したリード線１３に個々接続されている
。FIG. 3 is a partial plan view of the substrate 12 of FIG. 1, in which a pHJsEFET and a diode are formed on a planar silicon substrate. In the figure, 31 is a region that serves as the drain region of pH-15EPET and the cathode region of the diode,
32 is the gate region of pPLIsEFET, 33 is the pH-
15 is a source region of the EFET, 34 is a diode anode region, and 35 is a high impurity concentration p-type polysilicon region. Figures 4, 5, 6, 7, and 8 correspond to the dashed-dotted lines AA', BB', and C-C in Figure 3, respectively.
', D-D', EE', 41
42 is a p-type substrate, 42 is a high impurity concentration n-type source region, and 43 is a p-type substrate.
is an n-type gate region, 44 is a high impurity concentration n-type drain and cathode region, 45 is a p-type anode region, 46 is a high impurity concentration p-type polysilicon region, 47 is a hydrogen ion sensitive film, and 48 is an insulating film. It is. Although not shown, the high impurity concentration n-type source region 42 and the high impurity concentration p-type polysilicon region 46 extend to the end of the substrate and are individually connected to the lead wires 13 shown in FIG. There is.
以上のような装置を用い、大腸菌（Ｅｓｃｈｅｒｉｃｈ
ｉａ曲）を培養した寒天培地のｐＨの測定を行なった。Using the above-mentioned apparatus, Escherichia coli (Escherich
The pH of the agar medium in which the .ia song) was cultured was measured.
培地はブドウ糖１０ｇ、ペプトン２ｇ、塩化ナトリウム
５ｇ、リン酸水素二カリウム０．３ｇ、寒天１５ｇを蒸
留水で１ｅにしたものを用い、オートクレーブ滅菌後、
ｐＨを７．２に調整し、９０ｍｍシャーレに分注した。The medium used was 10 g of glucose, 2 g of peptone, 5 g of sodium chloride, 0.3 g of dipotassium hydrogen phosphate, and 15 g of agar made up to 1e with distilled water. After sterilization in an autoclave,
The pH was adjusted to 7.2, and the mixture was dispensed into a 90 mm petri dish.
前記培地に大腸菌を白金耳を用いて接種した。E. coli was inoculated into the medium using a platinum loop.
３０°Ｃで４時間培養後、約０．２ｍｍのコロニーが形
成し、このコロニーを中心として、その周辺のｐＨの測
定を行なった。ｐＨ測定領域は縦５ｍｍ横５ｍｍ、ｐＨ
ＪｓＥＦＥＴは基板上に縦構０．２ｍｍおきに設けた。After culturing at 30°C for 4 hours, a colony of about 0.2 mm was formed, and the pH around this colony was measured. The pH measurement area is 5 mm long and 5 mm wide.
JsEFETs were provided on the substrate at intervals of 0.2 mm in the vertical structure.
第９図は寒天培地のｐＨ分布図でｐＨを０．２単位で表
示したものである。FIG. 9 is a pH distribution diagram of an agar medium, in which pH is expressed in units of 0.2.
実施例からの結果から、本発明装置によれば寒天のｐＨ
測定が可能であり、例えば、０．２ｍｍおきにｐＨを測
定し、前記第９図に示したようなｐＨ分布を求めること
も可能である。基板設計の段階で、微細な領域の測定を
行なうことを考察に入れれば、この０．２ｍｍの間隔を
、さらに小さくすることも容易に実現できる。From the results from the examples, it can be seen that according to the device of the present invention, the pH of agar
For example, it is also possible to measure the pH at intervals of 0.2 mm and obtain the pH distribution as shown in FIG. 9 above. If consideration is given to measuring a minute area at the board design stage, it is possible to easily reduce this 0.2 mm interval even further.
（発明の効果）
以上のように本発明の装置によればｐＨの分布測定を容
易に迅速に行なうことができる。(Effects of the Invention) As described above, according to the apparatus of the present invention, pH distribution measurement can be easily and quickly performed.
第１図は本発明の一実施例を示す測定装置の模式図、第
２図はｐＨ−ｌ５ＦＥＴ群の回路図、第３図は基板の部
分平面図、第４図、第５図、第６図、第７図および第８
図は第３図で一点鎖線Ａ−Ａ’、 Ｂ−Ｂ’、 Ｃ−Ｃ
’、 Ｄ−Ｄ’およびＥ−Ｅ’におけるそれぞれの断面
図、第９図は実施例の結果を示す寒天のｐＨ分布図であ
る。
図において、
１１・・・・寒天、１２・・・・基板、１３・・・・リ
ード線、１４・・・・スイッチマトリックス、１５・・
・・電圧測定器、１６・・・・参照電極、２１．２２．
２３．２４・・・・スイッチ、２５・・・・ダイオード
、２６・・・・ｐＨ−ｌ５ＥＦＥＴ、２７・・・・外部
測定回路、３１・・・・ドレイン領域且つカソード領域
の兼用領域、３２・・・・ゲート領域、３３・・・・ソ
ース領域、３４・・・・アノード領域、３５・・・・高
不純物濃度ｐ形ポリシリコン領域、４１・・・・ｐ形基
板、４２・・・・高不純物濃度ｎ形ソース領域、４３・
・・・ｎ形ゲート領域、４４・・・・高不純物濃度ｎ形
ドレイン及びカソード領域、４５・・・・ｎ形アノード
領域、４６・・・・高不純物濃度ｐ形ポリシリコン領域
、４７・・・・水素イオン感応性筋２図
椿 ４図
第５図
第 乙 図
第 ７ 図
筋８図
４ど ４／Fig. 1 is a schematic diagram of a measuring device showing an embodiment of the present invention, Fig. 2 is a circuit diagram of a pH-15FET group, Fig. 3 is a partial plan view of a substrate, Figs. 4, 5, and 6. Figures 7 and 8
The diagram is shown in Figure 3 with dash-dotted lines A-A', B-B', and C-C.
', DD' and EE', and FIG. 9 is a pH distribution map of agar showing the results of the example. In the figure, 11...agar, 12...substrate, 13...lead wire, 14...switch matrix, 15...
... Voltage measuring device, 16... Reference electrode, 21.22.
23.24...Switch, 25...Diode, 26...pH-15EFET, 27...External measurement circuit, 31...Drain region and cathode region combined area, 32... ... gate region, 33 ... source region, 34 ... anode region, 35 ... high impurity concentration p-type polysilicon region, 41 ... p-type substrate, 42 ... High impurity concentration n-type source region, 43.
... n-type gate region, 44 ... high impurity concentration n-type drain and cathode region, 45 ... n-type anode region, 46 ... high impurity concentration p-type polysilicon region, 47 ... ...Hydrogen ion sensitive muscles Figure 2 Camellia 4 Figure 5 Figure 7 Figure 7 Muscles 8 Figure 4 4/
Claims (1)
が形成された基板と、被測定物内に挿入する前記複数の
イオンセンサに共通な参照電極と、前記複数のイオンセ
ンサと接続し単一のイオンセンサからの信号を選択する
スイッチ系と、このスイッチ系からの信号を測定する測
定系とを具備したことを特徴とする水素イオン濃度分布
測定装置。A substrate on which a plurality of hydrogen ion-sensitive semiconductor field effect ion sensors are formed, a reference electrode common to the plurality of ion sensors inserted into the object to be measured, and a reference electrode common to the plurality of ion sensors connected to the plurality of ion sensors. A hydrogen ion concentration distribution measuring device characterized by comprising a switch system for selecting a signal from a sensor and a measurement system for measuring a signal from the switch system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61081720A JPS62237349A (en) | 1986-04-08 | 1986-04-08 | Instrument for measuring distribution of hydrogen ion concentration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61081720A JPS62237349A (en) | 1986-04-08 | 1986-04-08 | Instrument for measuring distribution of hydrogen ion concentration |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62237349A true JPS62237349A (en) | 1987-10-17 |
| JPH0533745B2 JPH0533745B2 (en) | 1993-05-20 |
Family
ID=13754249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61081720A Granted JPS62237349A (en) | 1986-04-08 | 1986-04-08 | Instrument for measuring distribution of hydrogen ion concentration |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62237349A (en) |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5626251A (en) * | 1979-08-10 | 1981-03-13 | Olympus Optical Co Ltd | Detecting method for chemical material using chemical sensor having insulated gate type transistor structure |
-
1986
- 1986-04-08 JP JP61081720A patent/JPS62237349A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5626251A (en) * | 1979-08-10 | 1981-03-13 | Olympus Optical Co Ltd | Detecting method for chemical material using chemical sensor having insulated gate type transistor structure |
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| JPH0533745B2 (en) | 1993-05-20 |
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