JPS5928162A - Electrophotogrpahic receptor - Google Patents

Abstract

PURPOSE:To prevent the cracking and stripping of an amorphous silicon layer, by forming an intermediate layer contg. Al on an electrically conductive substrate made of an Al material and the amorphous silicon layer on the intermediate layer. CONSTITUTION:An intermediate layer 4 contg. Al and one or more among Si, C, O, N and H is formed on an electrically conductive substrate 3' made of an Al material by decomposing gaseous aluminum chloride (AlCl3) or trimethyl aluminum [Al(CH3)3] by glow discharge. An amorphous silicon layer 5 is then formed on the layer 4 by the glow discharge of gaseous silane (SiH4) or the like. Stress acting on the boundary between the layers 3, 5 owing to the difference in coefft. of thermal expansion between Al and amorphous silicon is relieved by the layer 4 whose coefft. of thermal expansion is between the coeffts. of Al and amorphous silicon, so the cracking and stripping of the layer 5 can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an electrophotographic photoreceptor used, for example, in an electronic copying machine.

[Technical background of the invention and its problems]

Conventionally, in this type of electrophotographic photoreceptor, as shown in FIG.
There is one on which amorphous silicon (a-84) J-Kyo 2 is deposited. However, since the thermal expansion coefficient of AtO is 10 times larger than that of amorphous silicon, this photoreceptor has the disadvantage that cracks and peeling occur in the amorphous silicon layer 2 during cooling after the formation.

[Purpose of the invention]

The present invention is based on the above-mentioned notes! The purpose is to provide an electrophotographic photoreceptor in which the amorphous silicon layer is free from cracking and peeling.

[Summary of the invention]

The present invention includes a conductive substrate made of an aluminum material, an intermediate layer containing at least At formed on this conductive substrate, and an amorphous silicon layer formed on this intermediate layer. The lrI feature is designed to relieve stress due to the difference in thermal expansion coefficient between the conductive substrate and the amorphous silicon layer.

[Embodiments of the invention]

An embodiment of the present invention is shown in FIG. 2 below. 11-Explain with reference to. In the figure, 3 is a conductive substrate made of aluminum material, and on this substrate 3 are A7, Sl, C, O, N,
The intermediate layer 4 containing at least one of H is made of, for example, aluminum chloride (AtC15) or trimethylaluminum (A
t(Cl-13) 3 ) is formed by the total glow discharge decomposition. Also, this intermediate) f! id
The amorphous silicon layer 5 containing at least t is formed on the above-mentioned 7J, and the temperature f of the electric housing substrate 3 is set to 150° C. or higher, and the glow of a gas containing at least S+, such as cyrano (Sit (4) gas) is applied. It is formed by IM using discharge.

According to the above configuration, the amorphous silicon layer 5, which includes at least the carbon fiber 3 and the carbon fiber 1 made of At feathers. Since an intermediate layer 4 containing At and, for example, S s @, , # is formed between them, the stress acting on the interface between At and amorphous silicon due to the difference in thermal expansion coefficient between At and amorphous silicon is reduced. Cracks and peeling of the amorphous silicon layer 5 can be eliminated by the intermediate layer 4 having an intermediate thermal expansion rate (IJ).

Note that the intermediate M6 shown in FIG. 3 has a mixed ratio of lt and St changed as shown in FIG. 4, that is, the conductive substrate 31ii has a ratio of A/1. In addition, the content of Si in the amorphous silicon layer 5 side is increased, and the content of Si in the intermediate layer 6 is increased. The stress acting on the interface between the flexible substrate 3 and the amorphous silicon layer 5 is continuously reduced, so that the electrically conductive groups 4 and 3 are gradually reduced. and amorphous silicon'/'t; j 5 cracking and peeling can be more effectively prevented by increasing the amorphous silicon'/'t; j 5 cracking and peeling.

In addition, if the intermediate layer 4.6 contains any one of N, O, or C, the amorphous silicon layers 5 to 4
'tii, when irradiating electromagnetic waves, it acts as a blocking layer to prevent the injection or passage of 'ut'=:j into the sexual substrate 3, and also acts as a blocking layer to prevent the injection or passage of Load holding capacity is also improved.

Further, the thickness of the intermediate layer should be as thin as possible.

It is usually 1 .mu.m or less, preferably 0.01 .mu.m or less, and good results can be obtained even under the conditions for forming the amorphous silicon layer (thus, about 301 .mu.m).

Next, an example of film formation will be described. That is, A
t/a-8t: A C:H alloy layer is formed.

tyc % In the case of aluminum chloride (ktct5) lt gas and cyano (SiJI4) gas, it is possible to change the dilution value to 1 or 2, Av'At203/
a-8i: 0: H ma or AA/AA N/
A - b i: N: H is formed!
do.

〔Effect of the invention〕

As explained above, according to the present invention, there is provided a conductive substrate made of an aluminum material, a conductive substrate, and an intermediate layer formed on the conductive substrate and containing at least A4.

Since an amorphous silicoff layer is formed on this intermediate layer, the thermal expansion force due to the difference in thermal expansion coefficient between the substrate and the amorphous silicon layer is reduced by λ, thereby preventing cracks in the amorphous silicon layer. It also has the effect of preventing peeling, etc. V #1-7'j is effective, and H4 is used.

[Brief explanation of the drawing]

Fig. 1 is a HTr side view showing a conventional example, Fig. 2 is a side view of an embodiment of the present invention, Fig. 3 is a sectional view showing another embodiment, and Fig. 4 is the same. lt of photoconductor in Examples
It is a figure showing a containing tube. , 3... Conductor' [Next, +1 (board, 4... Middle layer, 5
... Amorphous silicon layer, 6... Intermediate layer. One representative at the time, patent attorney Suzue Takehiko 1 drawing: ◇ Jin-yP 2 drawing 3 drawings $4<

Claims (1)

[Claims] (11 A conductive substrate made of an aluminum material, an intermediate layer containing at least At formed on the conductive substrate,
An electrophotographic photoreceptor comprising an amorphous silicon layer formed on the intermediate layer. (2) The intermediate layer is one of Si#Cl0INIH
The electrophotographic photoreceptor according to claim 1, comprising at least one. 13) The electrophotographic photoreceptor according to claim 8g1 or 2, wherein the intermediate layer is formed by glow discharge decomposition of aluminum chloride (Azcz3) or trimethylaluminum (At(CHs)5) gas.