JPS5776546A - Transfer mask for x-ray exposure - Google Patents
Transfer mask for x-ray exposureInfo
- Publication number
- JPS5776546A JPS5776546A JP15260480A JP15260480A JPS5776546A JP S5776546 A JPS5776546 A JP S5776546A JP 15260480 A JP15260480 A JP 15260480A JP 15260480 A JP15260480 A JP 15260480A JP S5776546 A JPS5776546 A JP S5776546A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- deposited
- mask
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 239000002131 composite material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229920006254 polymer film Polymers 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000007687 exposure technique Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a transfer mask capable of being aligned with visible light and having superior mass productivity by forming an X-ray shielding pattern made of metallic film with a high X-ray absorption coefft. on a 2-layered composite film consisting of a silicon nitride film and a polymer film. CONSTITUTION:Silicon nitride films 202, 203 are deposited on both sides of a silicon substrate 201 by CVD or other method. A resist having a window pattern 204 is placed on the film 203 deposited on the back side, and the film 203 is patterned by photoetching technique to form a silicon nitride film 301. A polymer film 401 is then formed on the film 202 by plasma polymn. On the whole surface of the resulting composite film a metallic film 501 with a high X-ray absorption coefft. is deposited, and on the film 501 a resist pattern 502 is formed by exposure technique. Using the pattern 502 as a mask the film 501 is etched to form an X-ray shielding pattern 601, and the silicon substrate 201 is etched using the film 301 as a mask. Thus, the desired transfer mask is obtd.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15260480A JPS5776546A (en) | 1980-10-30 | 1980-10-30 | Transfer mask for x-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15260480A JPS5776546A (en) | 1980-10-30 | 1980-10-30 | Transfer mask for x-ray exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5776546A true JPS5776546A (en) | 1982-05-13 |
Family
ID=15544030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15260480A Pending JPS5776546A (en) | 1980-10-30 | 1980-10-30 | Transfer mask for x-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5776546A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132323A (en) * | 1983-12-21 | 1985-07-15 | Hitachi Ltd | Mask for x-ray exposure |
| JPS63200530A (en) * | 1987-02-17 | 1988-08-18 | Matsushita Electronics Corp | Manufacture of x-ray mask |
| US20210397081A1 (en) * | 2020-06-22 | 2021-12-23 | Tongji University | Method for manufacturing grating reference materials having a self-traceability |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53134367A (en) * | 1977-04-28 | 1978-11-22 | Toppan Printing Co Ltd | Xxray mask |
-
1980
- 1980-10-30 JP JP15260480A patent/JPS5776546A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53134367A (en) * | 1977-04-28 | 1978-11-22 | Toppan Printing Co Ltd | Xxray mask |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132323A (en) * | 1983-12-21 | 1985-07-15 | Hitachi Ltd | Mask for x-ray exposure |
| JPH0428132B2 (en) * | 1983-12-21 | 1992-05-13 | Hitachi Ltd | |
| JPS63200530A (en) * | 1987-02-17 | 1988-08-18 | Matsushita Electronics Corp | Manufacture of x-ray mask |
| US20210397081A1 (en) * | 2020-06-22 | 2021-12-23 | Tongji University | Method for manufacturing grating reference materials having a self-traceability |
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