JPS56165327A - Method and apparatus for monitoring plasma etching - Google Patents

Method and apparatus for monitoring plasma etching

Info

Publication number
JPS56165327A
JPS56165327A JP6896080A JP6896080A JPS56165327A JP S56165327 A JPS56165327 A JP S56165327A JP 6896080 A JP6896080 A JP 6896080A JP 6896080 A JP6896080 A JP 6896080A JP S56165327 A JPS56165327 A JP S56165327A
Authority
JP
Japan
Prior art keywords
high frequency
etching
gas
frequency power
etching process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6896080A
Other languages
Japanese (ja)
Other versions
JPH0261140B2 (en
Inventor
Yoshimichi Hirobe
Hiromitsu Enami
Yoshinori Kureishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6896080A priority Critical patent/JPS56165327A/en
Publication of JPS56165327A publication Critical patent/JPS56165327A/en
Publication of JPH0261140B2 publication Critical patent/JPH0261140B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To detect the completion of an etching process by a method wherein the change with the passage of time is measured in its pressure inside a vacuum vessel where a semiconductor substrate undergoes gas plasma etching. CONSTITUTION:A semiconductor substrate 23 to undergo etching is placed on an electrode 22 and a plasma etching gas CF4, C2H6, C3H8, CHF3 or the like is supplied through a gas supply pipe 24. A high frequency power source 20 supplies a high frequency voltage to an electrode 22 and ionizes the gas. A vacuum gauge 26 and a signal processing device 27 constitute a monitoring system, determining and recording the pressure inside the vessel 21 that changes with the passage of time while etching is continued. The curve shows there is a sharp drop in pressure at the end B of an etching process. The sudden change is fed into the signal processing device 27 which in turn transmits the message to a high frequency power source controlling device 29 via a relay 28. Thus the end of an etching process is automatically detected and the supply of high frequency power is halted.
JP6896080A 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching Granted JPS56165327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6896080A JPS56165327A (en) 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6896080A JPS56165327A (en) 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching

Publications (2)

Publication Number Publication Date
JPS56165327A true JPS56165327A (en) 1981-12-18
JPH0261140B2 JPH0261140B2 (en) 1990-12-19

Family

ID=13388744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6896080A Granted JPS56165327A (en) 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching

Country Status (1)

Country Link
JP (1) JPS56165327A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140126A (en) * 1982-02-16 1983-08-19 Matsushita Electric Ind Co Ltd Dry etching method
US5284547A (en) * 1991-01-22 1994-02-08 Tokyo Electron Limited Plasma-process system with batch scheme
US5352902A (en) * 1992-07-06 1994-10-04 Tokyo Electron Kabushiki Kaisha Method for controlling plasma surface-treatments with a plurality of photodetectors and optical filters
JP2009013470A (en) * 2007-07-05 2009-01-22 Ulvac Japan Ltd Method for forming thin film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140126A (en) * 1982-02-16 1983-08-19 Matsushita Electric Ind Co Ltd Dry etching method
US5284547A (en) * 1991-01-22 1994-02-08 Tokyo Electron Limited Plasma-process system with batch scheme
US5352902A (en) * 1992-07-06 1994-10-04 Tokyo Electron Kabushiki Kaisha Method for controlling plasma surface-treatments with a plurality of photodetectors and optical filters
JP2009013470A (en) * 2007-07-05 2009-01-22 Ulvac Japan Ltd Method for forming thin film

Also Published As

Publication number Publication date
JPH0261140B2 (en) 1990-12-19

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