JPH11243157A - Semiconductor mounting board and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor mounting board equipped with a solder ball land which is superior in adhesion to a solder ball, and a method of efficiently manufacturing the mounting board. SOLUTION: A semiconductor mounting board is equipped with a solder ball land 11, a terminal connected to a semiconductor, and a wiring 12 which connects the solder ball land 11 to the terminal connected to the semiconductor, where the solder ball land 11 is provided with conductive projections 14, and a method of manufacturing the semiconductor mounting board is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for mounting a semiconductor, in particular, a substrate for mounting a semiconductor having solder balls, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, electronic devices have been further reduced in size, weight, and multifunctionality, and with this, LSIs, chip components, and the like have become more highly integrated. And it is changing rapidly. For this reason, printed wiring boards
In order to improve the mounting density of electronic components, there has been a growing demand for higher density wiring patterns.

[0003] Further, with the development of electronic equipment, wiring boards and electronic components have been miniaturized, while semiconductor chips have been increasing in scale in order to add and develop circuit functions. Conventionally, metal packages and ceramics are used for packages for mounting semiconductors, which is expensive, and organic materials have been used to reduce the cost of equipment. .

Therefore, as a container for mounting a semiconductor chip, the semiconductor chip is mounted directly on a wiring board, such as a film carrier, a leadless chip carrier, a flip chip, a pin grid array, a ball grid array, or the like, made of an organic material. Things are starting to be developed and marketed.

[0005] Further, in a wiring board, the thickness between layers can be reduced.
As wiring is miniaturized and interlayer connection holes are reduced in diameter, interstitial via holes (hereinafter, referred to as IVH) for connecting only conductors between adjacent layers, and buried via holes (hereinafter, referred to as BVH) are provided. The IVH and BVH have been further reduced in diameter.

[0006]

In a ball grid array package (BGA) using solder balls for connecting a semiconductor mounting substrate and a wiring board, the number of terminals is increased and the wiring density is increased. Is inevitable. However, when the number of terminals increases, when solder balls are welded and provided on a semiconductor mounting substrate, the surface area of the solder ball lands on the semiconductor mounting substrate is small,
There is a problem in that the adhesion to the solder ball is reduced, and in some cases, the solder ball may fall off during the process.

According to the present invention, there is provided a semiconductor mounting substrate having a solder ball land having excellent adhesion to a solder ball,
It is an object of the present invention to provide a method for efficiently manufacturing the semiconductor mounting substrate.

[0008]

According to the present invention, there is provided a semiconductor mounting substrate comprising: a solder ball land; a terminal for connecting to the semiconductor; and a wiring for connecting the solder ball land to a terminal for connecting to the semiconductor. Wherein the solder ball lands have conductor protrusions.

Preferably, the projection of the conductor is divided into a plurality.

The projection of the conductor may be made of the same metal as the solder ball land, or may be made of a different metal from the solder ball land. Furthermore,
It may be composed of two layers of different metals.

[0011] Such a semiconductor mounting substrate can be manufactured as follows. a. A first layer having a thickness of 1 to 9 μm, which has a roughness suitable for bonding with a resin and serves as at least a land for a solder ball.
And a second copper layer having a thickness of 10 to 150 μm and having sufficient strength for handling as a metal layer as a whole, and nickel having a thickness of 0.04 to 3 μm provided between the two layers. A step of forming a conductor pattern by etching away only unnecessary portions of the first copper layer of the composite metal foil made of the phosphorus alloy layer; b. A step of forming a cured thermosetting insulating resin layer on the conductor pattern surface of the metal foil on which the conductor pattern has been formed to form an insulating resin layer with a composite metal foil. c. A step of selectively removing a portion of the second copper layer other than a portion serving as a protrusion. d. A step of removing only the exposed nickel-phosphorus alloy layer.

Further, it can be manufactured in the following manner. a1. 15-thickness with roughness suitable for bonding with resin
An etching dist is formed on a 400 μm copper foil at least in the shape of a land for a solder ball, and the portion of the copper foil exposed from the etching resist is etched away in the thickness direction by 10 to 90% of the entire thickness of the copper foil. Forming a conductive pattern. b1. A step of forming a cured thermosetting insulating resin layer on the conductive pattern surface of the copper foil on which the conductive pattern is formed to form an insulating resin layer with a copper foil. c1. The surface of the copper foil not in contact with the thermosetting insulating resin layer,
A step of forming an etching resist in a portion to be a protrusion and selectively etching away a copper foil in a portion where the etching resist is not formed;

[0013] Also, it can be manufactured as follows. a2. A first copper layer having a thickness suitable for adhesion to a resin and having a thickness of at least 1 to 9 μm serving as a land for a solder ball, and a thickness of 10 to have a strength sufficient for handling as a metal layer as a whole. A second copper layer of 150 μm;
A conductive pattern is formed by etching and removing only unnecessary portions of the first copper layer of the composite metal foil made of a nickel-phosphorus alloy layer having a thickness of 0.04 to 3 μm provided between the two layers. Process. b2. A step of forming a cured thermosetting insulating resin layer on the conductor pattern surface of the metal foil on which the conductor pattern has been formed to form an insulating resin layer with a composite metal foil. c2. Laser irradiation is performed on a portion of the insulating resin layer with a composite metal foil prepared in the step b2 where an electrical connection is made on the side of the thermosetting insulating resin layer to form a hole serving as a via hole reaching the back surface of the conductive pattern. Process. d2. A step of plating the inner wall of the via hole and the surface of the thermosetting insulating resin layer of the insulating resin layer with composite metal foil to form a conductor. e2. A circuit is formed by selectively etching away a portion of the second copper layer other than a portion serving as a protrusion, and etching away an unnecessary portion of a conductor formed on the opposite surface of the insulating resin layer with a composite metal foil. Process. f2. A step of removing only the exposed nickel-phosphorus alloy layer.

Further, it can be manufactured in the following manner. a3. 15-thickness with roughness suitable for bonding with resin
An etching resist is formed on a 400 μm copper foil at least in the shape of a land for a solder ball, and a portion of the copper foil exposed from the etching resist is etched and removed in the thickness direction by 10 to 90% of the entire thickness of the copper foil. Forming a conductive pattern. b3. A step of forming a cured thermosetting insulating resin layer on the conductive pattern surface of the copper foil on which the conductive pattern is formed to form an insulating resin layer with a copper foil. c3. A step of irradiating a laser to a portion of the insulating resin layer with copper foil on the side of the thermosetting insulating resin layer formed in the step b3 where an electrical connection is to be made to form a hole serving as a via hole reaching the back surface of the conductive pattern. . d3. Forming a conductor by plating the inner wall of the hole serving as a via hole and the surface of the thermosetting insulating resin layer of the insulating resin layer with copper foil; e3. The surface of the copper foil not in contact with the thermosetting insulating resin layer,
An etching resist is formed on the portion that will become a protrusion, and the copper foil in the portion where the etching resist is not formed is selectively etched away, and unnecessary portions of the conductor formed on the opposite surface of the insulating resin layer with the copper foil are removed. A step of forming a circuit by etching away.

At this time, Step b, Step b1, Step b2
Alternatively, it is preferable to use a material obtained by dispersing a filler in the thermosetting insulating resin layer formed on the conductor pattern surface of the metal foil in step b3. For such a filler dispersed in the thermosetting insulating resin layer, In addition to ordinary glass cloth and paper, an electrically insulating ceramic whisker can be used, and the amount of the filler dispersed in the thermosetting insulating resin layer is 5 to 50 v.
ol% is preferred.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (Thermosetting Insulating Resin) The thermosetting insulating resin of the present invention may be prepared, for example, by mixing a bifunctional epoxy resin and a halogenated difunctional phenol at an equivalent ratio of epoxy group / phenol hydroxyl group = 1. /0.9 to 1.1, heat having a molecular weight of 100,000 or more, polymerized by heating in the presence of a catalyst, and having a molecular weight of 100,000 or more, a cross-linking agent, Either a curable epoxy resin or a resin having no ability to form a film by itself can be used. Here, the film-forming ability means that the resin is dissolved in a solvent to form a varnish, the thickness of which is easily controlled when the varnish is applied to a carrier film, and which is heated and dried to have a semi-cured state. It refers to the ability to hardly cause cracking or chipping of resin when transporting, cutting and laminating, and to ensure the minimum thickness as an insulating layer during the subsequent heat and pressure molding.

As a thermosetting insulating resin having no film forming ability by itself, there is a resin which is used by impregnating a conventional glass cloth. For example, a resin having a molecular weight of not more than 30,000, such as an epoxy resin, Examples include bismaleimide triazine resin, polyimide resin, phenol resin, melamine resin, silicon resin, unsaturated polyester resin, cyanate ester resin, isocyanate resin, and modified resins thereof. Among them, epoxy resin, bismaleimide triazine resin, and polyimide resin are preferable because of their high Tg, elastic modulus, and hardness. Examples of the epoxy resin include bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A
Novolak epoxy resin, salicylaldehyde novolak epoxy resin, bisphenol F novolak epoxy resin, alicyclic epoxy resin, glycidyl ester epoxy resin, glycidylamine epoxy resin, hydantoin epoxy resin, isocyanurate epoxy resin, aliphatic Cyclic epoxy resins and their halides, those selected from hydrogenated can be used,
They can be used together. Among them, bisphenol A novolak type epoxy resin and salicylaldehyde novolak type epoxy resin are excellent in heat resistance and are preferable.

(Curing Agent) As the curing agent used for the thermosetting insulating resin of the present invention, any curing agent can be used as long as it is used for the above-mentioned resin. Of these, dicyandiamide, bisphenol A, bisphenol F, polyvinyl phenol resin, novolak resin, and bisphenol A novolak resin are preferable because of their excellent heat resistance. The mixing ratio of this curing agent to the thermosetting insulating resin is 100%.
With respect to parts by weight, a range of 2 to 100 parts by weight is preferable,
If it is dicyandiamide, the range is more preferably 2 to 5 parts by weight, and if it is the other curing agent, the range is 30 to 80 parts by weight. If the amount is less than 2 parts by weight, curing will be insufficient, and the heat resistance will decrease. If it exceeds 100 parts by weight, the electrical properties and heat resistance will decrease.

(Curing Accelerator) A curing accelerator can be further used in the thermosetting insulating resin and the curing agent of the present invention. When the thermosetting resin is an epoxy resin, the curing accelerator is , Imidazole compounds, organic phosphorus compounds, tertiary amines, quaternary ammonium salts, and the like. The compounding ratio of the curing accelerator is preferably in the range of 0.01 to 20 parts by weight, more preferably 0.1 to 10 parts by weight, based on 100 parts by weight of the thermosetting insulating resin.
If the amount is less than 0.01 part by weight, the curing becomes insufficient and the heat resistance is reduced. If the amount exceeds 20 parts by weight, the life of the B stage is shortened and the heat resistance is reduced.

(Diluent) The above-mentioned thermosetting insulating resin, curing agent and curing accelerator are used after being diluted with a solvent, and include acetone, methyl ethyl ketone, toluene, xylene, methyl isobutylene, ethyl acetate and ethylene glycol. Monomethyl ether, methanol, ethanol,
N, N-dimethylformamide, N, N-dimethylacetamide and the like can be used. The mixing ratio of the diluent to the thermosetting insulating resin is 100
The range of 1 to 200 parts by weight relative to parts by weight is preferable,
A range of 30 to 100 parts by weight is more preferable. When the amount is less than 1 part by weight, the viscosity becomes high and coating unevenness is easily generated.
If the amount is more than 00 parts by weight, the viscosity becomes too low and the coating cannot be applied to a required thickness.

(Electrically Insulating Ceramic Whisker) As a filler that can be used in the present invention, there is an electrically insulating ceramic whisker. Examples of such an electrically insulating ceramic whisker include aluminum borate,
It can be used by selecting from wollastonite, potassium titanate, basic magnesium sulfate, silicon nitride, and α-alumina. Among them, aluminum borate and potassium titanate have a Mohs hardness similar to that of conventional E glass. Thus, a wire bonding property equivalent to that of a conventional prepreg is obtained, and furthermore, aluminum borate is preferable because it has a high elastic modulus of 400 MPa and is easily mixed with varnish.

The shape of the electrically insulating ceramic whisker preferably has an average diameter of 0.3 to 3 μm and an average length of at least 5 times the average diameter. The average diameter is
If it is less than 0.3 μm, mixing with the resin varnish becomes difficult, and if it exceeds 3 μm, dispersion in the resin is not sufficient,
The unevenness of the applied surface becomes large. This average diameter is
The range of 0.3 to 1 μm is more preferable.

If the average length is less than 5 times, the rigidity of the resin cannot be obtained, and more preferably 20 times or more. In addition, the upper limit is preferably 50 μm or less, and this numerical value is preferably smaller than the pattern interval of the conductor patterns. It is not preferable because ion migration of copper easily occurs along the insulating ceramic whisker and the possibility that the pattern is short-circuited is high.

In order to enhance the wettability between the electrically insulating ceramic whisker and the thermosetting insulating resin, it is preferable to use an electrically insulating ceramic whisker whose surface is treated with a coupling agent. Coupling agents include silicon-based coupling agents, titanium-based coupling agents, aluminum-based coupling agents, zirconium-based coupling agents, zirconium-based coupling agents, chromium-based coupling agents, boron-based coupling agents, and phosphorus-based coupling agents. It can be used by selecting from a system-based coupling agent, an amino-based coupling agent and the like.

(Ratio of thermosetting insulating resin to electrically insulating ceramic whisker) The ratio of thermosetting insulating resin to electrically insulating ceramic whisker is determined by the ratio of electrically insulating ceramic whisker in the cured thermosetting insulating resin. Whisker is 5-50v
It is necessary to adjust so as to be ol%. Further, the content is more preferably 20 to 40% by volume. 5
When the content is less than vol%, the thermosetting insulating resin has a small film-forming ability, is difficult to handle such as being scattered at the time of cutting, has low rigidity, has a large warp after component mounting, and deteriorates mountability. If it exceeds 50 vol%, the filling into the gaps between the conductor patterns is insufficient at the time of molding under heat and pressure, and voids and blurring may occur after molding, and the insulating property may be reduced.

(Drilling with Laser) A laser is used for drilling non-through holes. Examples of the laser include an excimer laser, a carbon dioxide laser, a YAG laser, and the like, and a carbon dioxide laser that balances processing speed, processing quality, processing cost, and the like is preferable.

Step a. In this step, in order to form an etching resist, a method used for a normal printed wiring board can be used, for example, a method of printing a peelable resist ink on the surface of a copper foil by a silk screen printing method, A method of laminating a resist film on the surface of a copper foil, irradiating an ultraviolet ray through a photomask so that a resist can be formed on a circuit portion, and developing and removing a circuit gap portion can be used. At this time, it is preferable to form an etching resist also on the entire surface of the second copper layer on the back surface to prevent the second copper layer from being etched.

As a solution for etching and removing only the first copper layer, a solution containing chlorine ions, ammonium ions and copper ions (hereinafter referred to as an alkaline etchant) is used. A method of contacting with a solution is used. The etching resist is removed by using a solvent or an alkaline aqueous solution.

Step b. In this step, in order to form a thermosetting insulating resin layer on the metal foil on which the conductor pattern has been formed, a method of superimposing on a normal prepreg, heating and pressurizing to laminate and integrate, There is a method of applying a stirred varnish to a solution (hereinafter, referred to as a thermosetting insulating resin varnish) in which a curing agent, a curing accelerator, and a diluent are mixed, and then heating and curing the solution. A coating method such as a rod coater, knife coater, squeeze coater, reverse roll coater, or transfer roll coater that can apply a shearing force in a direction parallel to the copper foil or a compressive force in a direction perpendicular to the surface of the copper foil. It is preferable to select. To add a filler to this thermosetting insulating resin, the thermosetting insulating resin, a curing agent, a curing accelerator, and a solution obtained by mixing a diluent, for example, mixing an electrically insulating ceramic whisker, The varnish was stirred.

Step c. In this step, the same alkali etchant as that used for etching the first copper layer can be used as the solution for etching and removing the portion of the second copper layer other than the portion serving as the protrusion, and the solution becomes a protrusion. In order to remove portions other than the portions by etching, it is sufficient to form an etching resist and etch only unnecessary portions, and to form this etching resist, a method used for a normal printed wiring board can be used, for example,
A method of printing a peelable resist ink on the surface of copper foil by silk screen printing, or laminating a peelable resist film on the surface of copper foil and forming a resist on the circuit part via a photomask May be used to irradiate the surface with ultraviolet rays and develop and remove the circuit gap. In this step, it is preferable that the etching resist is formed so that the protrusion is divided into a plurality. The etching removal method can also be carried out by contacting with a solution such as dipping or spraying.

Step d. In this step, in order to remove only the nickel-phosphorus alloy layer, an organic acid having a carboxyl group as an additive and -NH- and -N as ring members are added to a liquid containing nitric acid and hydrogen peroxide as main components. It is immersed in an aqueous solution containing a heterocyclic compound containing nitrogen in the form of = or sprayed with such an aqueous solution.

Step a1. In this step, an etching resist is formed at least in the shape of a land for a solder ball on a copper foil having a thickness suitable for bonding with a resin and having a thickness of 15 to 400 μm, and a portion of the copper foil exposed from the etching resist is formed. In the thickness direction, 10 to the entire thickness of the copper foil
The conductor pattern is formed by etching away by 90%. At this time, since the conductor pattern is not completely etched to the thickness of the copper foil, the conductor pattern has a shape in which the process is stopped halfway, namely, the engraving of the engraving. It has a raised shape like a relief.

Step b1. In this step, in the above step,
Except that a thermosetting insulating resin layer is formed on the surface of the copper foil having irregularities, the process can be performed in the same manner as in step b.

Step c1. In this step, an etching resist is formed at the position where the protrusion is to be formed, and the copper foil having the unevenness is etched from the back side, and in a state where the protrusion remains,
The periphery is removed by etching, and the copper foil remains on the raised portion on the back side, but the recessed portion on the back side is removed and the thermosetting insulating resin layer appears. The end point is when the raised portion on the back side appears as a circuit, and a protrusion is formed in a part of the circuit.
In this step, it is preferable that the etching resist is formed so that the protrusion is divided into a plurality.

Step a2. It can be performed in the same manner as in step a.

Step b2. It can be performed in the same manner as in step b.

Step c2. In this step, lasers that can be used include a carbon dioxide laser, a YAG laser, an excimer laser, and the like, and a carbon dioxide laser that is balanced in terms of processing speed, processing quality, and processing cost is preferable. The irradiation conditions of the laser beam at this time are preferably such that the pulse is oscillated in a short time and has a large output. For example, the width of one pulse is 1 to 40 μsec and the pulse repetition frequency is 15 μm.
Under the conditions of 0 to 10,000 Hz and the number of repetition pulses of 1 to 10 pulses, a laser oscillator capable of producing an output capable of drilling holes with an output magnitude of 2 to 5 pulses oscillates.
This is preferable because control becomes easy. This output is in the range of 15 to 40 J / cm ² in terms of energy density. If the output per hour is less than the above range, the resin layer is evaporated,
If it cannot be diverged and exceeds the above range, the hole diameter becomes more than necessary and it is difficult to control, and the evaporated resin may carbonize and adhere, so that the adhered carbide must be removed.

Step d2. In this step, the plating method is the same as that of ordinary wiring, where the electroless plating is performed after cleaning the plating area, attaching a plating catalyst, treating with a sensitizer, washing, and ending. I do. At this time, since the back surface is in a state of a copper foil, it is preferable to form a plating resist in advance and peel off after the plating is completed so that the thickness is not further increased.

Step e2. This step can be performed in the same manner as in step c.

Step f2. The step can be performed in the same manner as in step d.

Step a3. In this step, step a1
Can be performed in the same manner as described above.

Step b3. In this step, step b1
Can be performed in the same manner.

Step c3. In this step, step c2
Can be performed in the same manner as described above.

Step d3. In this step, step d2
Can be performed in the same manner as described above.

Step e3. In this step, step c1
And step e2.

[0046]

EXAMPLE 1 As shown in FIG. 1A, a first copper layer 31 having a thickness of 5 μm was formed.
/ Nickel-phosphorus alloy layer 32 of thickness 0.2 μm 32 / thickness 1
An etching resist is formed on the surface of the first copper layer 31 of the composite metal foil 3 composed of the 5 μm second copper layer 33, and an A process solution (manufactured by Meltex Co., Ltd.,
As shown in FIG. 1B, after the formation of the solder ball land 11, the semiconductor connection terminal (not shown), and the wiring 12 connecting the terminal and the solder ball land, as shown in FIG. Then, the etching resist was stripped with a 3 wt% aqueous sodium hydroxide solution to form a circuit. As shown in FIG. 1C, the surface of the first copper layer 31 of the composite metal foil 3 is coated with a prepreg made of glass cloth impregnated with an epoxy resin, GEA-E-679 (manufactured by Hitachi Chemical Co., Ltd.). (Product name) having a thickness of 100 μm, 170 ° C., 2.5
The insulating resin layer 5 with a composite metal foil having the thermosetting insulating resin layer 2 having a thickness of 100 μm was prepared by heating and pressing under the conditions of MPa and heating and pressing for 60 minutes. After that, an etching resist is formed on the surface of the second copper layer 33 of the composite metal foil 3, and no etching resist is formed using a commercially available alkaline etchant A process solution (trade name, manufactured by Meltex Corporation). Etch and remove parts
The protrusions 14 are formed, and the nickel-phosphorus alloy layer 32 on which the protrusions 14 are not formed is etched with the following etching solution.
After etching removal, a semiconductor mounting substrate was manufactured as shown in FIGS. 1 (d) and 1 (e). (Nickel-phosphorus etching solution composition) ・ Nitric acid ・ ・ ・ ・ ・ ・ ・ ・ 200g / l ・ Hydrogen peroxide solution (35%) ・·········· 10 ml / l ・ Organic acid containing carboxyl group (DL-malic acid) ··· 100 g / l · Benzotriazole ··· ... 5 g / l

Embodiment 2 As shown in FIG. 2A, on one surface of a copper foil 35 having a thickness of 20 μm, a solder ball land 11, a semiconductor connection terminal (not shown), the terminal and the solder ball Land 11
An etching resist is formed in the shape of the wiring 12 connecting the electrodes, and an etching resist is formed on the entire other surface,
As shown in FIG. 2B, using a process liquid A (trade name, manufactured by Meltex Co., Ltd.) as a copper etchant, a land 11 for a solder ball, a wiring 12, and a terminal for semiconductor connection (not shown). Was formed so as to have a height of 7 μm, and the etching resist was peeled off with a 3 wt% sodium hydroxide aqueous solution. As shown in FIG. 2 (c), the surface of the copper foil 35 where the bulge was formed was formed on a prepreg obtained by impregnating a glass cloth with an epoxy resin.
Thickness of 79 (product name, manufactured by Hitachi Chemical Co., Ltd.) 100
μm are stacked and laminated under a heating and pressing condition of 170 ° C., 2.5 MPa and 60 minutes, and a thickness of 100 μm
Resin layer 6 with copper foil having thermosetting insulating resin layer 2
Was prepared. After that, an etching resist is formed on the surface of the copper foil 35, and the copper foil 35 where the etching resist is not formed is removed by using a commercially available alkaline etchant A process solution (trade name, manufactured by Meltex Co., Ltd.).
By etching away to a thickness of μm, a semiconductor mounting substrate having projections 14 formed on the solder ball lands 11 as shown in FIGS. 2D and 2E was manufactured. .

Example 3 A thermosetting insulating resin varnish having the following composition was applied to the surface of the first copper layer 31 of the composite metal foil 3 using a knife coater.
An insulating resin layer 5 with a composite metal foil having a thermosetting insulating resin layer 2 having a thickness of 50 μm cured and dried at 60 ° C. for 60 minutes.
A semiconductor mounting substrate was produced in the same manner as in Example 1 except that was produced. (Composition of thermosetting insulating resin varnish) ・ Epoxy polymer having a molecular weight of 100,000 ・ ・ ・ 100 parts by weight ・ Cresol novolac epoxy resin ・ ・ ・・ ・ 30 parts by weight ・ Phenol novolak resin ・ ・ ・ ・ ・ ・ ・ 20 parts by weight ・ 2-ethyl-4-methylimidazole ・ ・ ・ ・・ 0.5 parts by weight ・ N, N-dimethylformamide / methyl ethyl ketone (equal weight ratio) 150 parts by weight

Embodiment 4 As shown in FIG. 3A, a first copper layer 31 having a thickness of 5 μm is formed.
/ Nickel-phosphorus alloy layer 32 of thickness 0.2 μm 32 / thickness 1
An etching resist is formed on the surface of the first copper layer 31 of the composite metal foil 3 composed of the 5 μm second copper layer 33, and an A process solution (manufactured by Meltex Co., Ltd.,
As shown in FIG. 3 (b), after forming the solder ball land 11, the wiring 12, and the connection land 13 by using (trade name), the etching resist is peeled off with a 3 wt% aqueous solution of sodium hydroxide to form a wiring. Was formed. As shown in FIG. 3C, the surface of the first copper layer 31 of the composite metal foil 3
G, a prepreg made of glass cloth impregnated with epoxy resin
EA-E-679 (trade name, manufactured by Hitachi Chemical Co., Ltd.)
Of 100μm thickness, 170 ℃, 2.5MP
a, the laminate was integrated by heating and pressing under the conditions of 60 minutes to prepare an insulating resin layer 5 with a composite metal foil having a thermosetting insulating resin layer 2 having a thickness of 100 μm. The carbon dioxide gas impact laser drilling machine GS500 (manufactured by Sumitomo Heavy Industries, Ltd.
According to the product name), frequency = 150Hz, voltage = 20k
V, a pulse energy of 85 mJ, and a number of shots of 7 shots, a laser beam was irradiated to remove the thermosetting insulating resin layer 2 at a portion where interlayer connection was to be performed, and as shown in FIG. A hole 71 serving as a via hole having a diameter of 0.15 mm reaching the back surface of the connection land 13 of the layer 31 was formed. As shown in FIG. 3E, the insulating resin layer 5 with the composite metal foil having the holes 71 serving as the via holes is subjected to cleaning / conditioning treatment, sensitization treatment, and adhesion promotion in the manner of ordinary electroless plating. After the treatment, SR-3000 (trade name, manufactured by Hitachi Chemical Co., Ltd.) is laminated on the surface of the second copper layer 33 of the composite metal foil 3 as a plating resist, and an electroless copper plating solution CUST-2000 ( Using Hitachi Chemical Co., Ltd., trade name), thickness 15μ
m of copper plating 8 was performed. Thereafter, an etching resist is formed on both sides, and a commercially available alkaline etchant A
Using a process liquid (trade name, manufactured by Meltex Co., Ltd.), a portion where an etching resist is not formed is removed by etching, and as shown in FIGS. 3F and 3G, a projection 14 is formed on the solder ball land 11. And unnecessary portions of the copper plating 8 are removed by etching to form a circuit connected to the connection lands 13 via the via holes 7, and further, a nickel-phosphorus alloy having no projections 14 formed thereon. The layer 32 was removed by etching with the following etchant to produce a semiconductor mounting substrate. (Nickel-phosphorus etching solution composition) ・ Nitric acid ・ ・ ・ ・ ・ ・ ・ ・ 200g / l ・ Hydrogen peroxide solution (35%) ・·········· 10 ml / l ・ Organic acid containing carboxyl group (DL-malic acid) ··· 100 g / l · Benzotriazole ··· ... 5 g / l

Embodiment 5 As shown in FIG. 4A, an etching resist is formed on one surface of a copper foil 35 having a thickness of 20 μm in the shape of the solder ball land 11, the wiring 12, and the connection land 13. On the other surface, an etching resist is formed on the entire surface, and an A process solution (manufactured by Meltex Co., Ltd.,
4B, the solder ball lands 11, the wirings 12, and the connection lands 13 are formed so as to have a thickness of 7 μm as shown in FIG. Peeled off with aqueous sodium hydroxide. As shown in FIG. 4 (c), the surface of the copper foil 35 on which the swell was formed was made of a prepreg made of glass cloth impregnated with an epoxy resin, GEA-E-679 (trade name, manufactured by Hitachi Chemical Co., Ltd.). 100 μm thick one on top of the other,
The laminate was integrated by heating and pressurizing under conditions of 170 ° C., 2.5 MPa, and 60 minutes to produce an insulating resin layer 6 with a copper foil having a thermosetting insulating resin layer 2 having a thickness of 100 μm. On the insulating resin layer 6 with copper foil produced in the above process, a frequency = 150 Hz, a voltage = 150 Hz using a carbon dioxide impact laser drilling machine GS500 (manufactured by Sumitomo Heavy Industries, Ltd.).
Under a condition of 20 kV, a pulse energy of 85 mJ, and a number of shots of 7, a laser beam is irradiated to remove the thermosetting insulating resin layer 2 at a portion where an interlayer connection is made, and as shown in FIG. A hole 71 serving as a via hole having a diameter of 0.15 mm reaching the back surface of the connection land 13 was formed. As shown in FIG. 4E, the insulating resin layer 6 with the copper foil having the hole 71 serving as the via hole is subjected to a cleaning conditioning treatment, a sensitization treatment, and an adhesion promoting treatment in the manner of ordinary electroless plating. After performing the above, SR-3000 (trade name, manufactured by Hitachi Chemical Co., Ltd.) is applied to the surface of the copper foil 35.
Was laminated as a plating resist, and copper plating 8 having a thickness of 15 μm was performed using an electroless copper plating solution CUST-2000 (trade name, manufactured by Hitachi Chemical Co., Ltd.). Thereafter, an etching resist is formed on both sides, and a portion where the etching resist is not formed is removed by etching with a process liquid A (trade name, manufactured by Meltex Co., Ltd.) which is a commercially available alkaline etchant. As shown in (g), a projection 14 is formed on the solder ball land 11, an unnecessary portion of the copper plating 8 is removed by etching, and a circuit connected to the connection land 13 by the via hole 7 is formed. Then, a semiconductor mounting substrate was manufactured.

Example 6 As shown in FIG. 4C, a thermosetting insulating resin varnish having the following composition was applied to the surface of the copper foil 35 on which the swell was formed, using a knife coater, and dried at 170 ° C. for 60 minutes. do it,
A semiconductor mounting substrate was produced in the same manner as in Example 5, except that an insulating resin layer 6 with a copper foil having a cured thermosetting insulating resin 2 having a thickness of 50 μm was formed. (Composition of thermosetting insulating resin varnish) ・ Epoxy polymer having a molecular weight of 100,000 ・ ・ ・ 100 parts by weight ・ Cresol novolac epoxy resin ・ ・ ・・ ・ 30 parts by weight ・ Phenol novolak resin ・ ・ ・ ・ ・ ・ ・ 20 parts by weight ・ 2-ethyl-4-methylimidazole ・ ・ ・ ・・ 0.5 parts by weight ・ N, N-dimethylformamide / methyl ethyl ketone (equal weight ratio) 150 parts by weight

Example 7 A thermosetting insulating resin varnish having the following composition was treated with 30 v
% of aluminum borate whiskers are mixed, agitated, applied with a knife coater, dried at 170 ° C. for 60 minutes, and cured to form an insulating resin layer 6 with a composite metal foil having a thermosetting insulating resin 2 having a thickness of 50 μm. Was carried out in the same manner as in Example 3 except that was prepared. (Composition of thermosetting insulating resin varnish) Bisphenol A novolak type epoxy resin 100 parts by weight (Epoxy equivalent: 200) Bisphenol A novolak resin 60 parts by weight (hydroxyl equivalent: 106) 2-ethyl-4-methylimidazole (curing agent) 0.5 parts by weight Methyl ethyl ketone (diluent)・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 100 parts by weight ・ Aluminum borate whisker ・ ・ ・ ・ ・ ・ ・ ・ 30vol%

Example 8 The same procedure as in Example 6 was carried out except that 10 vol% of aluminum borate whiskers were mixed and stirred with the thermosetting insulating resin varnish. Laser drilling conditions were a carbon dioxide gas laser with an energy density of 20 J / cm ² , an oscillation time of 1 μsec, an oscillation frequency of 150 Hz, and a pulse number of 3.

The solder balls 9 are placed on the solder ball lands 11 of the semiconductor mounting substrate thus manufactured, and are passed through a furnace heated to 260 ° C., as shown in FIGS.
As shown in (d), the solder ball 9 was formed, and the substrate was rotated so that the solder ball 9 was lowered before the temperature of the solder was lowered to 100 ° C. or less by an infrared thermometer. Also in the example, the solder ball 9 did not fall off. Further, there was no solder ball 9 on the semiconductor mounting substrate on which the solder ball 9 was normally mounted.

[0055]

As described above, according to the present invention, a semiconductor mounting substrate provided with a solder ball land having excellent adhesion to a solder ball, and a method for efficiently manufacturing the semiconductor mounting substrate are provided. can do.

[Brief description of the drawings]

1 (a), 1 (c) and 1 (e) are cross-sectional views showing respective steps for explaining one embodiment of the present invention.
(B) is a bottom view of (a), and (d) is a top view of (e).

2 (a), 2 (c) and 2 (e) are cross-sectional views showing respective steps for explaining another embodiment of the present invention, and FIG. 2 (b) is a bottom view of FIG. 2 (a). (D) is a top view of (e).

FIG. 3 (a), (c), (d), (e), (g)
It is sectional drawing which shows each process for each explaining still another Example of this invention, (b) is a bottom view of (a), (f) is a top view of (g).

FIG. 4 (a), (c), (d), (e), (g)
It is sectional drawing which shows each process for each explaining still another Example of this invention, (b) is a bottom view of (a), (f) is a top view of (g).

FIGS. 5A to 5D are cross-sectional views showing states in which solder balls are mounted on the semiconductor mounting substrates manufactured in the respective examples.

[Explanation of symbols]

11. Land for solder balls 12. Wiring 13. Land for connection 14. Projection 2. 2. Thermosetting insulating resin layer Composite metal foil 31. First copper layer 32. Nickel-phosphorus alloy layer 33. Second copper layer 35. Copper foil 5. 5. Insulating resin layer with composite metal foil 6. Insulating resin layer with copper foil Via hole 71. 7. Hole to be a via hole Copper plating 9. Solder ball

Claims (12)

[Claims] 1. A semiconductor mounting substrate having a solder ball land, a terminal for connecting to a semiconductor, and wiring for connecting the solder ball land to a terminal for connecting to a semiconductor, the semiconductor mounting substrate comprising: A semiconductor mounting substrate, wherein the land has a conductor protrusion. 2. The semiconductor mounting substrate according to claim 1, wherein the projection of the conductor is divided into a plurality. 3. The method according to claim 1, wherein the protrusion of the conductor is made of the same metal as the land for the solder ball.
Or the substrate for mounting a semiconductor according to 2. 4. The semiconductor mounting substrate according to claim 1, wherein the projection of the conductor is made of a metal different from the solder ball land. 5. The semiconductor mounting substrate according to claim 1, wherein the projections of the conductor are made of two layers of different metals. 6. A method of manufacturing a substrate for mounting a semiconductor, comprising the following steps. a. A first layer having a thickness of 1 to 9 μm, which has a roughness suitable for bonding with a resin and serves as at least a land for a solder ball.
And a second copper layer having a thickness of 10 to 150 μm and having sufficient strength for handling as a metal layer as a whole, and nickel having a thickness of 0.04 to 3 μm provided between the two layers. A step of forming a conductor pattern by etching away only unnecessary portions of the first copper layer of the composite metal foil made of the phosphorus alloy layer; b. A step of forming a cured thermosetting insulating resin layer on the conductor pattern surface of the metal foil on which the conductor pattern has been formed to form an insulating resin layer with a composite metal foil. c. A step of selectively removing a portion of the second copper layer other than a portion serving as a protrusion. d. A step of removing only the exposed nickel-phosphorus alloy layer. 7. A method of manufacturing a substrate for mounting a semiconductor, comprising the following steps. a1. 15-thickness with roughness suitable for bonding with resin
An etching resist is formed on a 400 μm copper foil at least in the shape of a land for a solder ball, and a portion of the copper foil exposed from the etching resist is etched and removed in the thickness direction by 10 to 90% of the entire thickness of the copper foil. Forming a conductive pattern. b1. A step of forming a cured thermosetting insulating resin layer on the conductive pattern surface of the copper foil on which the conductive pattern is formed to form an insulating resin layer with a copper foil. c1. The surface of the copper foil not in contact with the thermosetting insulating resin layer,
A step of forming an etching resist in a portion to be a protrusion and selectively etching away a copper foil in a portion where the etching resist is not formed; 8. A method of manufacturing a substrate for mounting a semiconductor, comprising the following steps. a2. A first copper layer having a thickness suitable for adhesion to a resin and having a thickness of at least 1 to 9 μm serving as a land for a solder ball, and a thickness of 10 to have a strength sufficient for handling as a metal layer as a whole. A second copper layer of 150 μm;
A conductive pattern is formed by etching and removing only unnecessary portions of the first copper layer of the composite metal foil made of a nickel-phosphorus alloy layer having a thickness of 0.04 to 3 μm provided between the two layers. Process. b2. A step of forming a cured thermosetting insulating resin layer on the conductor pattern surface of the metal foil on which the conductor pattern has been formed to form an insulating resin layer with a composite metal foil. c2. Laser irradiation is performed on a portion of the insulating resin layer with a composite metal foil prepared in the step b2 where an electrical connection is made on the side of the thermosetting insulating resin layer to form a hole serving as a via hole reaching the back surface of the conductive pattern. Process. d2. A step of plating the inner wall of the via hole and the surface of the thermosetting insulating resin layer of the insulating resin layer with composite metal foil to form a conductor. e2. A circuit is formed by selectively etching away a portion of the second copper layer other than a portion serving as a protrusion, and etching away an unnecessary portion of a conductor formed on the opposite surface of the insulating resin layer with a composite metal foil. Process. f2. A step of removing only the exposed nickel-phosphorus alloy layer. 9. A method of manufacturing a substrate for mounting a semiconductor, comprising the following steps. a3. 15-thickness with roughness suitable for bonding with resin
An etching resist is formed on a 400 μm copper foil at least in the shape of a land for a solder ball, and a portion of the copper foil exposed from the etching resist is etched and removed in the thickness direction by 10 to 90% of the entire thickness of the copper foil. Forming a conductive pattern. b3. A step of forming a cured thermosetting insulating resin layer on the conductive pattern surface of the copper foil on which the conductive pattern is formed to form an insulating resin layer with a copper foil. c3. A step of irradiating a laser to a portion of the insulating resin layer with copper foil on the side of the thermosetting insulating resin layer formed in the step b3 where an electrical connection is to be made to form a hole serving as a via hole reaching the back surface of the conductive pattern. . d3. Forming a conductor by plating the inner wall of the hole serving as a via hole and the surface of the thermosetting insulating resin layer of the insulating resin layer with copper foil; e3. The surface of the copper foil not in contact with the thermosetting insulating resin layer,
An etching resist is formed on the portion that will become a protrusion, and the copper foil in the portion where the etching resist is not formed is selectively etched away, and unnecessary portions of the conductor formed on the opposite surface of the insulating resin layer with the copper foil are removed. A step of forming a circuit by etching away. 10. A method in which a filler is dispersed in a cured thermosetting insulating resin layer formed on a conductor pattern surface of a metal foil in step b, step b1, step b2 or step b3. A method for manufacturing the semiconductor mounting substrate according to claim 6. 11. The method according to claim 10, wherein the filler dispersed in the thermosetting insulating resin layer is an electrically insulating ceramic whisker. 12. The method according to claim 10, wherein the amount of the filler dispersed in the thermosetting insulating resin layer is 5 to 50 vol%.