JPH1070151A - Method and apparatus for arraying conductive particle - Google Patents
Method and apparatus for arraying conductive particleInfo
- Publication number
- JPH1070151A JPH1070151A JP8242653A JP24265396A JPH1070151A JP H1070151 A JPH1070151 A JP H1070151A JP 8242653 A JP8242653 A JP 8242653A JP 24265396 A JP24265396 A JP 24265396A JP H1070151 A JPH1070151 A JP H1070151A
- Authority
- JP
- Japan
- Prior art keywords
- conductive particles
- film
- particles
- laser
- arranging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/11003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、レーザによる粒子
転写を用いた粒子配列実装方法で、半導体装置，液晶デ
ィスプレイ，ＩＣカード等の実装方法に関わり、より詳
細には、導電性粒子を用いた電子部品の実装方法に関す
るもので、例えば、電極バンプ形成，メッキ等の分野に
応用できるものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a particle array using laser-based particle transfer, and more particularly to a method for mounting a semiconductor device, a liquid crystal display, an IC card, and the like. The present invention relates to a method for mounting an electronic component, and is applicable to, for example, fields such as electrode bump formation and plating.
【０００２】[0002]
【従来の技術】導電粒子を用いた実装方法は、従来より
種々提案されている。例えば、メタルマスク等を用いて
配列化した導電粒子をＳiゴム等で粘着し、金属電極上
に転写する方法や、磁性体を用い選択的に導電粒子を形
成する方法等が知られている。2. Description of the Related Art Various mounting methods using conductive particles have been conventionally proposed. For example, a method in which conductive particles arranged using a metal mask or the like are adhered with Si rubber or the like and transferred onto a metal electrode, or a method in which conductive particles are selectively formed using a magnetic material are known.
【０００３】[0003]
【発明が解決しようとする課題】従来の導電粒子を用い
た電極間の接続方法では、導電粒子のパタン形成をメタ
ルマスク等を用いて導電粒子の配列を行っていた。即
ち、マスク上の導電粒子をスキージ等で送り、マスクの
穴部のみに導電粒子を配置し、導電粒子パタンを形成さ
せるようにしていた。しかしながら、この導電粒子配列
方法では、電極パタン上に直接導電粒子を形成するのは
困難で、導電粒子パタンと電極の位置合わせが非常に難
しいという問題があった。また、このような方法では、
導電粒子がマスク上をスキージで送られるため、導電粒
子表面の金属剥離や割れ等の発生が問題となっていた。
さらに、微細な金属マスクの作成が必要とされるため、
これが今後の微細化にとって障害となっていた。また、
磁性膜等で吸着転写する方法では、磁力の制御が困難で
あり、パタン化した磁性膜を作成する場合、加工上高度
な技術や装置が要求されるという問題があった。In the conventional connection method between electrodes using conductive particles, a pattern of the conductive particles is formed by arranging the conductive particles using a metal mask or the like. That is, the conductive particles on the mask are sent by a squeegee or the like, and the conductive particles are arranged only in the holes of the mask to form a conductive particle pattern. However, in this method of arranging conductive particles, it is difficult to form conductive particles directly on the electrode pattern, and there is a problem that alignment of the conductive particle pattern and the electrode is very difficult. Also, in such a method,
Since the conductive particles are sent over the mask by a squeegee, there has been a problem of occurrence of metal peeling or cracking on the surface of the conductive particles.
In addition, because it is necessary to create a fine metal mask,
This has been an obstacle to future miniaturization. Also,
In the method of performing adsorption transfer using a magnetic film or the like, it is difficult to control the magnetic force, and there has been a problem in that when forming a patterned magnetic film, advanced technology and equipment are required in processing.
【０００４】本発明は、上述のような実情に鑑みてなさ
れたもので、金属マスク法では形成と制御が困難な微細
パタンを、粒子を破損することなく容易に電極上に形成
することができ、さらに、磁性膜等の高度な加工を要す
る治具を使わず、高速に電極上への導電粒子配列の形成
を行うことができる粒子配列方法及びその装置を提供す
ることをその解決すべき課題とする。[0004] The present invention has been made in view of the above-mentioned circumstances, and a fine pattern, which is difficult to form and control by a metal mask method, can be easily formed on an electrode without damaging particles. Further, it is an object of the present invention to provide a particle arrangement method and apparatus capable of forming an arrangement of conductive particles on an electrode at high speed without using a jig which requires advanced processing such as a magnetic film. And
【０００５】[0005]
【課題を解決するための手段】請求項１の発明は、電極
上に導電性粒子を配列し、前記導電性粒子を介して電極
間の接続を行なうための前記導電性粒子の配列方法にお
いて、透明フィルム上に粘着剤を介して粘着させた前記
導電性粒子を前記透明フィルムの粘着面にレーザ光を照
射することによって選択的に剥離し、剥離した前記導電
性粒子を電極上に転写し、配列させるようにしたもので
ある。According to a first aspect of the present invention, there is provided a method of arranging conductive particles on an electrode, wherein the conductive particles are arranged on the electrode and a connection between the electrodes is made via the conductive particle. The conductive particles adhered to the transparent film via an adhesive are selectively peeled off by irradiating a laser beam to the adhesive surface of the transparent film, and the peeled conductive particles are transferred onto an electrode. They are arranged.
【０００６】請求項２の発明は、電極上に導電性粒子を
配列し、前記導電性粒子を介して電極間の接続を行なう
ための前記導電性粒子の配列方法において、フィルム上
に粘着剤を介して粘着させた前記導電性粒子を前記フィ
ルムの粘着面にレーザ光を照射することにより生じるレ
ーザアブレーション作用により選択的に剥離し、前記フ
ィルム上に残留した前記導電性粒子を電極上に転写し、
配列させるようにしたものである。According to a second aspect of the present invention, in the method for arranging conductive particles on electrodes, the conductive particles are arranged via the conductive particles, and the adhesive is provided on the film. The conductive particles adhered through are selectively peeled off by laser ablation caused by irradiating the adhesive surface of the film with a laser beam, and the conductive particles remaining on the film are transferred onto an electrode. ,
They are arranged.
【０００７】請求項３の発明は、請求項２記載の粒子配
列方法において、減圧雰囲気下でレーザ光の照射を行う
ようにしたものである。According to a third aspect of the present invention, in the particle arrangement method according to the second aspect, laser light irradiation is performed under a reduced pressure atmosphere.
【０００８】請求項４の発明は、請求項２記載の粒子配
列方法において、Ｈe雰囲気下あるいはＨe吹き付け下で
レーザ光の照射を行うようにしたものである。According to a fourth aspect of the present invention, in the particle arranging method according to the second aspect, laser light irradiation is performed in a He atmosphere or under He blowing.
【０００９】請求項５の発明は、請求項１記載の粒子配
列方法において、前記レーザ光が紫外光であり、前記導
電性粒子の剥離が前記レーザ光を照射することにより生
じるレーザアブレーション作用によりなされるようにし
たものである。According to a fifth aspect of the present invention, in the particle arrangement method according to the first aspect, the laser light is ultraviolet light, and the conductive particles are separated by laser ablation caused by irradiating the laser light. That's what I did.
【００１０】請求項６の発明は、レーザ光に対して透明
であり、少なくとも一部に粘着性が付与されている透明
フィルムと、該透明フィルムを連続的に供給するフィル
ム供給装置と、前記透明フィルム上に導電粒子を連続的
に供給する導電粒子供給装置と、電極に同期させてレー
ザ光を請求項１または５記載の粒子配列方法に従って前
記透明粘着フィルムの粘着面に照射するレーザ装置とを
備えるようにしたものである。According to a sixth aspect of the present invention, there is provided a transparent film which is transparent to a laser beam and at least a part of which is provided with adhesiveness, a film supply apparatus for continuously supplying the transparent film, A conductive particle supply device that continuously supplies conductive particles onto a film, and a laser device that irradiates a laser beam on the adhesive surface of the transparent adhesive film according to the particle arrangement method according to claim 1 in synchronization with an electrode. It is prepared for.
【００１１】請求項７の発明は、少なくとも一部に粘着
性が付与されているフィルムと、該フィルムを連続的に
供給するフィルム供給装置と、前記フィルム上に導電粒
子を連続的に供給する導電粒子供給装置と、電極に同期
させてレーザ光を請求項２ないし４いずれか１記載の粒
子配列方法に従って前記粘着フィルムの粘着面に照射す
るレーザ装置とを備えるようにしたものである。According to a seventh aspect of the present invention, there is provided a film having at least a portion of which has tackiness, a film supply device for continuously supplying the film, and a conductive film for continuously supplying conductive particles on the film. According to a second aspect of the present invention, there is provided a particle supply device, and a laser device that irradiates a laser beam to an adhesive surface of the adhesive film in accordance with the particle arrangement method according to any one of claims 2 to 4.
【００１２】請求項８の発明は、請求項６または７記載
の粒子配列装置において、前記レーザ装置に使用される
レーザ光がエキシマレーザであるようにしたものであ
る。According to an eighth aspect of the present invention, in the particle arrangement device according to the sixth or seventh aspect, the laser beam used for the laser device is an excimer laser.
【００１３】[0013]
【発明の実施の形態】本発明による方式では、レーザ光
を吸収した粘着部の急激な体積増加によって導電粒子が
フィルムから剥離する作用を利用しているため、導電粒
子の非常に高速な転写が可能となる。特に、光化学的な
反応であるレーザアブレーション作用を利用した場合、
粘着部と導電粒子との接合部はレーザ光を照射した瞬間
に解離させることも可能であり、熱プロセスと比較して
高速な処理が可能となる。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the method according to the present invention, a very high-speed transfer of conductive particles is performed because a function of separating conductive particles from a film by a sudden increase in volume of an adhesive portion absorbing laser light is used. It becomes possible. In particular, when utilizing the laser ablation action which is a photochemical reaction,
The bonding portion between the adhesive portion and the conductive particles can be dissociated at the moment of irradiating the laser beam, so that high-speed processing can be performed as compared with a thermal process.
【００１４】レーザ光は、レンズ等の光学系で容易に集
光，整形可能であるため、高速に精度よく導電粒子パタ
ンを形成でき、また、金属マスクやパタン化された磁性
膜等を用いる必要がないため、高精度な任意パタンを形
成することが可能である。Since the laser beam can be easily condensed and shaped by an optical system such as a lens, it is possible to form a conductive particle pattern at high speed and with high accuracy, and to use a metal mask or a patterned magnetic film. Therefore, it is possible to form a high-precision arbitrary pattern.
【００１５】レーザアブレーション作用は、レーザ光を
吸収した物質の急激な体積増加によるもので、物質のレ
ーザ吸収効率がアブレーション作用に大きく影響する。
一般に、高分子物質では紫外部の光の吸収効率が高く、
効率的にアブレーションを起こすことが知られている。
このようなアブレーション作用においては、低圧雰囲気
下では、アブレーションにより解離された粒子は大きな
運動エネルギーを持つため、レーザ被照射部から遠く飛
散し、またＨe雰囲気下では、アブレーション時の衝撃
波の形成がより広い領域で起きるため、レーザ被照射部
周辺への粒子の再付着が少ないことが知られている。The laser ablation action is caused by a sudden increase in the volume of the substance that has absorbed the laser beam, and the laser absorption efficiency of the substance greatly affects the ablation action.
In general, a polymer substance has a high absorption efficiency of ultraviolet light,
It is known to cause ablation efficiently.
In such ablation, particles dissociated by ablation have a large kinetic energy under a low-pressure atmosphere, and therefore scatter far away from the laser-irradiated portion. In a He atmosphere, the formation of shock waves during ablation is more pronounced. It is known that the re-adhesion of the particles around the laser-irradiated portion is small because it occurs in a wide area.
【００１６】以下に本発明が適用される粒子配列方法の
実施形態を添付された図面を参照して具体的に説明す
る。まず、レーザ光を照射することにより剥離した導電
粒子の転写及び配列方法の実施形態を図１を参照して説
明する。図１は、本発明による粒子配列方法の一実施形
態を説明するための模式図で、図中、１は基板、２は接
着剤層、３は電極、４は透明フィルム、５は粘着剤層、
６は導電粒子、７はレーザ光である。接着剤層２を表面
の一部に設けた電極３を基板１上に用意し、その上方の
透明フィルム４表面には粘着剤層５を介して粘着された
導電粒子６を配置する。その後、電極３上で導電粒子６
を転写・配列しようとする場所にフィルムの粘着面の背
面側からレーザ光７の照射を行うことにより、照射され
た領域の導電粒子６を粘着剤層５から剥離させ、この剥
離した導電粒子を電極３上にパタンとして形成させるこ
とができる。Hereinafter, embodiments of a particle arrangement method to which the present invention is applied will be specifically described with reference to the attached drawings. First, an embodiment of a method for transferring and arranging conductive particles separated by irradiation with laser light will be described with reference to FIG. FIG. 1 is a schematic diagram for explaining one embodiment of the particle arrangement method according to the present invention. In the drawing, 1 is a substrate, 2 is an adhesive layer, 3 is an electrode, 4 is a transparent film, and 5 is an adhesive layer. ,
Reference numeral 6 denotes conductive particles, and reference numeral 7 denotes laser light. An electrode 3 having an adhesive layer 2 provided on a part of its surface is prepared on a substrate 1, and conductive particles 6 adhered via an adhesive layer 5 are arranged on a surface of a transparent film 4 above the electrode 3. Then, the conductive particles 6 on the electrode 3
Irradiation of the laser beam 7 from the back side of the adhesive surface of the film to the place where the film is to be transferred / arranged, the conductive particles 6 in the irradiated area are separated from the adhesive layer 5, and the separated conductive particles are removed. It can be formed as a pattern on the electrode 3.
【００１７】次いで、レーザアブレーション作用を利用
してフィルム上でパタン化した導電粒子の転写及び配列
方法の実施形態を図２を参照して説明する。図２は、本
発明による粒子配列方法の他の実施形態を説明するため
の模式図で、図中、８は粘着フィルムで、その他、図１
と同じ作用をする部分には図１と同じ符号が付してあ
る。まず、粘着フィルム８上に導電粒子６を粘着させる
が、このときの粘着剤は、レーザ光によりアブレーショ
ンが可能である材料を使用する。その後、レーザ光７を
粘着面に照射することで、照射された領域に生じるレー
ザアブレーション作用により、粘着剤とともに導電粒子
６をフィルム上から剥離する。粘着フィルム８上では残
留した導電粒子６によりパタンが形成され、この導電粒
子パタンを電極３上に転写することにより、この電極３
の表面に導電粒子の配列パタンを形成することができ
る。Next, an embodiment of a method for transferring and arranging conductive particles patterned on a film by using a laser ablation function will be described with reference to FIG. FIG. 2 is a schematic view for explaining another embodiment of the particle arranging method according to the present invention. In FIG. 2, reference numeral 8 denotes an adhesive film, and FIG.
Parts having the same functions as in FIG. 1 are denoted by the same reference numerals as in FIG. First, the conductive particles 6 are adhered to the adhesive film 8, and a material that can be ablated by laser light is used as the adhesive at this time. Then, the conductive particles 6 are peeled off from the film together with the adhesive by irradiating the adhesive surface with the laser beam 7 and performing a laser ablation action generated in the irradiated area. On the adhesive film 8, a pattern is formed by the remaining conductive particles 6, and by transferring the conductive particle pattern onto the electrode 3,
An array pattern of conductive particles can be formed on the surface of the substrate.
【００１８】次いで、レーザ光を照射することにより連
続的に導電粒子を電極上に転写及び配列させる粒子配列
装置の実施形態を図３を参照して説明する。図３は、本
発明による粒子配列装置の一実施形態を説明するための
模式図で、図中、９は回転ドラム、１０は導電粒子供給
装置、１１は導電粒子回収装置、１２は基板供給装置
で、その他、図１と同じ作用をする部分には、図１と同
じ符号が付してある。この場合、導電粒子６は、回転ド
ラム９より繰り出される透明フィルム４の粘着側表面に
導電粒子６を連続的に供給していく導電粒子供給装置１
０と、後方で残った導電粒子６を取り除く導電粒子回収
装置１１により制御される。このように連続的に供給さ
れる導電粒子６は、所望の電極３の上方でレーザ光７を
照射され、照射領域の導電粒子６が透明フィルム４から
剥離し、電極３の表面に転写・配列される。この電極３
を備える基板１を連続的に供給する基板供給装置１２を
用いることにより、導電粒子６の連続的な電極３への転
写・配列を可能とする装置を構成する。Next, an embodiment of a particle arrangement device for continuously transferring and arranging conductive particles on electrodes by irradiating a laser beam will be described with reference to FIG. FIG. 3 is a schematic view for explaining one embodiment of the particle arrangement device according to the present invention. In the figure, 9 is a rotating drum, 10 is a conductive particle supply device, 11 is a conductive particle recovery device, and 12 is a substrate supply device. Other parts having the same functions as those in FIG. 1 are denoted by the same reference numerals as those in FIG. In this case, the conductive particle supply device 1 continuously supplies the conductive particles 6 to the adhesive side surface of the transparent film 4 fed from the rotating drum 9.
0, and is controlled by the conductive particle recovery device 11 that removes the conductive particles 6 remaining behind. The conductive particles 6 continuously supplied in this manner are irradiated with laser light 7 above the desired electrode 3, and the conductive particles 6 in the irradiated area are peeled off from the transparent film 4 and transferred and arranged on the surface of the electrode 3. Is done. This electrode 3
By using the substrate supply device 12 that continuously supplies the substrate 1 provided with the above, a device that enables continuous transfer and arrangement of the conductive particles 6 to the electrodes 3 is configured.
【００１９】次いで、レーザアブレーション作用を用い
て連続的に導電粒子を電極上に転写及び配列させる粒子
配列装置の実施形態を図４を参照して説明する。図４
は、本発明による粒子配列装置の他の実施形態を説明す
るための模式図で、図中、１３はミラー、１４は転写用
押しつけ装置で、その他、図３と同じ作用をする部分に
は、図３と同じ符号が付してある。上述の図３に示した
実施形態と同様に、導電粒子６は、連続的にフィルム８
の粘着側表面に供給される。この導電粒子６にミラー１
３等で整形されたレーザ光を照射し、照射された領域の
導電粒子６を剥離してフィルム８に残留した導電粒子６
によりパタンを形成させる。その後、例えばピストンの
ような押しつけ装置１４でフィルム８を電極３へ向かっ
て押し付け、前記残留した導電粒子６を電極３の表面の
接着剤層２に接着させることにより、導電粒子６を転写
・配列させる。また、さらに、電極３を有する基板１を
連続的に供給する基板供給装置１２を用いることによ
り、導電粒子６の連続的な電極３への転写を可能とする
装置を構成する。Next, an embodiment of a particle arrangement apparatus for continuously transferring and arranging conductive particles on an electrode by using a laser ablation function will be described with reference to FIG. FIG.
Is a schematic diagram for explaining another embodiment of the particle arrangement device according to the present invention, in the figure, 13 is a mirror, 14 is a transfer pressing device, and other parts that have the same action as FIG. The same reference numerals as in FIG. 3 are used. Similar to the embodiment shown in FIG. 3 described above, the conductive particles 6 are continuously applied to the film 8.
Is supplied to the adhesive side surface. This conductive particle 6 has a mirror 1
3 is irradiated with the laser beam shaped by 3 or the like, the conductive particles 6 in the irradiated area are peeled off, and the conductive particles 6 remaining on the film 8 are removed.
To form a pattern. Thereafter, the film 8 is pressed toward the electrode 3 by a pressing device 14 such as a piston, and the remaining conductive particles 6 are adhered to the adhesive layer 2 on the surface of the electrode 3 to transfer and arrange the conductive particles 6. Let it. Further, by using a substrate supply device 12 that continuously supplies the substrate 1 having the electrodes 3, an apparatus capable of continuously transferring the conductive particles 6 to the electrodes 3 is configured.
【００２０】[0020]
請求項１の発明の効果：透明フィルムの少なくとも一部
に粘着性を付与し、導電粒子を表面に粘着させ、レーザ
光をフィルムの粘着面の背面側から照射することによ
り、レーザ照射領域の導電粒子のみが選択的にフィルム
から剥離する。このような方法により、高速で高精度な
粒子転写が可能となる。特に、粒子配列及び電極への接
続プロセスを一括して行うため、作業の簡略化，高速化
が可能となる。また、３次元的凹凸を持つ金属パタン上
にも容易に粒子を配列することが可能となる。さらに、
粒子のパタン形成をマスクなしに行うことができ、プロ
セスの簡略化が可能となる。Effect of the invention of claim 1: By imparting adhesiveness to at least a part of the transparent film, adhering the conductive particles to the surface, and irradiating the laser light from the back side of the adhesive surface of the film, the conductivity of the laser irradiation area is improved. Only the particles selectively exfoliate from the film. According to such a method, high-speed and high-accuracy particle transfer can be performed. In particular, since the particle arrangement and the connection process to the electrodes are performed collectively, the operation can be simplified and speeded up. Further, it is possible to easily arrange particles on a metal pattern having three-dimensional irregularities. further,
The patterning of particles can be performed without a mask, and the process can be simplified.
【００２１】請求項２の発明の効果：工程の初期にレー
ザアブレーション作用を用いることにより必要としない
導電粒子を除去して、導電粒子のパタンをフィルム上に
形成し、このパタン化した導電粒子を転写・配列させる
ため、フィルムの透明性や耐熱性の必要がなく、粒子の
転写・配列作業を行う前にパタンを準備しておくことが
でき、より高速な処理を行うことが可能となる。また、
パタン形成をマスクなしに行うことができ、プロセスの
簡略化が可能となる。According to the second aspect of the present invention, unnecessary conductive particles are removed by using a laser ablation function at the beginning of the process, and a pattern of conductive particles is formed on a film. Since the film is transferred and arranged, there is no need for transparency and heat resistance of the film, and a pattern can be prepared before the work of transferring and arranging the particles, so that higher-speed processing can be performed. Also,
Pattern formation can be performed without a mask, and the process can be simplified.
【００２２】請求項３の発明の効果：請求項２の発明の
効果に加えて、レーザアブレーション時の雰囲気を減圧
することにより飛散物が吸引され、アブレーションの際
に問題となる飛散粒子の被照射部周囲への再付着を軽減
することができる。According to the third aspect of the present invention, in addition to the effect of the second aspect of the present invention, scattered particles are sucked by reducing the atmosphere at the time of laser ablation, and scattered particles which are problematic at the time of ablation are irradiated. Reattachment around the part can be reduced.
【００２３】請求項４の発明の効果：請求項２の発明の
効果に加えて、レーザアブレーション時の雰囲気をＨe
雰囲気とすることで、アブレーションの際の飛散粒子が
より遠方にまで飛散し、問題となる飛散粒子のレーザ被
照射部周囲への再付着を軽減することができる。Effect of the invention of claim 4: In addition to the effect of the invention of claim 2, the atmosphere during laser ablation is changed to He.
By setting the atmosphere, the scattered particles at the time of ablation are scattered farther, and the problematic re-adhesion of the scattered particles to the vicinity of the laser irradiation portion can be reduced.
【００２４】請求項５の発明の効果：請求項１の発明の
効果に加えて、特にレーザアブレーション作用を用いる
ことにより、通常のレーザ熱作用による処理に比較し
て、より高速な処理が可能となる。Effect of the invention of claim 5 In addition to the effect of the invention of claim 1, in particular, by using a laser ablation function, it is possible to perform processing at a higher speed as compared with processing by ordinary laser thermal action. Become.
【００２５】請求項６の発明の効果：請求項１または５
の発明の効果に加えて、フィルム送り機構と導電粒子供
給機構を備え、請求項１または５記載の粒子配列方法に
従って導電粒子の配列を行うようにすることにより、パ
タン化した導電粒子を連続的に供給することが可能とな
り、高速な処理能力を有する粒子配列装置が得られる。Effect of the invention of claim 6: claim 1 or 5
In addition to the effects of the present invention, a film feeding mechanism and a conductive particle supply mechanism are provided, and the conductive particles are arranged according to the particle arranging method according to claim 1 so that the patterned conductive particles can be continuously formed. And a particle arrangement device having a high-speed processing capability can be obtained.
【００２６】請求項７の発明の効果：請求項２ないし４
のいずれか１の発明の効果に加えて、フィルム送り機構
と導電粒子供給機構を備え、請求項２ないし４のいずれ
か１記載の粒子配列方法に従って導電粒子の配列を行う
ようにすることにより、パタン化した導電粒子を連続的
に供給することが可能となり、高速な処理能力を有する
粒子配列装置が得られる。Effect of the invention of claim 7: claims 2 to 4
In addition to the effect of any one of the inventions described above, a film feeding mechanism and a conductive particle supply mechanism are provided, and by arranging the conductive particles according to the particle arranging method according to any one of claims 2 to 4, The patterned conductive particles can be continuously supplied, and a particle arrangement device having a high-speed processing capability can be obtained.
【００２７】請求項８の発明の効果：請求項６または７
の発明の効果に加えて、レーザ装置に使用されるレーザ
光をエキシマレーザとすることで、アブレーション作用
を利用する場合には、アブレーション可能な被照射材料
の選択肢を多くでき、またパルス当りのエネルギーが大
きいため、一度に大面積のパタン化が可能となる。Effect of the invention of claim 8: claim 6 or 7
In addition to the effects of the invention of (1), by using an excimer laser as the laser beam used in the laser device, when utilizing the ablation function, it is possible to increase the choices of the irradiation target material that can be ablated, and to increase energy per pulse. , A large area can be patterned at once.
【図１】 本発明による粒子配列方法の一実施形態を説
明するための模式図である。FIG. 1 is a schematic diagram illustrating one embodiment of a particle arrangement method according to the present invention.
【図２】 本発明による粒子配列方法の他の実施形態を
説明するための模式図である。FIG. 2 is a schematic diagram for explaining another embodiment of the particle arrangement method according to the present invention.
【図３】 本発明による粒子配列装置の一実施形態を説
明するための模式図である。FIG. 3 is a schematic diagram illustrating one embodiment of a particle arrangement device according to the present invention.
【図４】 本発明による粒子配列装置の他の実施形態を
説明するための模式図である。FIG. 4 is a schematic diagram for explaining another embodiment of the particle arrangement device according to the present invention.
１…基板、２…接着剤層、３…電極、４…透明フィル
ム、５…粘着剤層、６…導電粒子、７…レーザ光、８…
粘着性フィルム、９…回転ドラム、１０…導電粒子供給
装置、１１…導電粒子回収装置、１２…基板供給装置、
１３…ミラー、１４…転写用押しつけ装置。DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... adhesive layer, 3 ... electrode, 4 ... transparent film, 5 ... adhesive layer, 6 ... conductive particles, 7 ... laser beam, 8 ...
Adhesive film, 9: rotating drum, 10: conductive particle supply device, 11: conductive particle recovery device, 12: substrate supply device,
13: mirror, 14: transfer pressing device.
Claims (8)
性粒子を介して電極間の接続を行なうための前記導電性
粒子の配列方法において、透明フィルム上に粘着剤を介
して粘着させた前記導電性粒子を前記透明フィルムの粘
着面にレーザ光を照射することによって選択的に剥離
し、剥離した前記導電性粒子を電極上に転写し、配列さ
せるようにすることを特徴とする粒子配列方法。1. A method for arranging conductive particles on electrodes, wherein the conductive particles are arranged on the transparent film via an adhesive in the method for arranging the conductive particles for connection between the electrodes via the conductive particles. The conductive particles are selectively separated by irradiating the adhesive surface of the transparent film with laser light, and the separated conductive particles are transferred onto an electrode and arranged. Array method.
性粒子を介して電極間の接続を行なうための前記導電性
粒子の配列方法において、フィルム上に粘着剤を介して
粘着させた前記導電性粒子を前記フィルムの粘着面にレ
ーザ光を照射することにより生じるレーザアブレーショ
ン作用により選択的に剥離し、前記フィルム上に残留し
た前記導電性粒子を電極上に転写し、配列させるように
することを特徴とする粒子配列方法。2. The method of arranging conductive particles on electrodes, and the method of arranging conductive particles for making connection between the electrodes via the conductive particles, the method includes adhering the film to the film with an adhesive. The conductive particles are selectively peeled off by a laser ablation effect generated by irradiating the adhesive surface of the film with a laser beam, and the conductive particles remaining on the film are transferred onto an electrode and arranged. A particle arrangement method.
減圧雰囲気下でレーザ光の照射を行うようにすることを
特徴とする粒子配列方法。3. The method for arranging particles according to claim 2, wherein
A method of arranging particles, wherein laser irradiation is performed under a reduced pressure atmosphere.
Ｈe雰囲気下あるいはＨe吹き付け下でレーザ光の照射を
行うようにすることを特徴とする粒子配列方法。4. The method for arranging particles according to claim 2,
A method for arranging particles, wherein laser irradiation is performed in a He atmosphere or under He blowing.
前記レーザ光が紫外光であり、前記導電性粒子の剥離が
前記レーザ光を照射することにより生じるレーザアブレ
ーション作用によりなされることを特徴とする粒子配列
方法。5. The method for arranging particles according to claim 1, wherein
The method for arranging particles, wherein the laser light is ultraviolet light, and the conductive particles are separated by laser ablation caused by irradiating the laser light.
も一部に粘着性が付与されている透明フィルムと、該透
明フィルムを連続的に供給するフィルム供給装置と、前
記透明フィルム上に導電粒子を連続的に供給する導電粒
子供給装置と、電極に同期させてレーザ光を請求項１ま
たは５記載の粒子配列方法に従って前記透明粘着フィル
ムの粘着面に照射するレーザ装置とを備えるようにした
ことを特徴とする電極上への粒子配列装置。6. A transparent film which is transparent to a laser beam and has at least a part of which is tacky, a film supply device for continuously supplying the transparent film, and conductive particles on the transparent film. And a laser device that irradiates the adhesive surface of the transparent adhesive film with a laser beam in synchronization with an electrode according to the particle arrangement method according to claim 1. An apparatus for arranging particles on an electrode, comprising:
るフィルムと、該フィルムを連続的に供給するフィルム
供給装置と、前記フィルム上に導電粒子を連続的に供給
する導電粒子供給装置と、電極に同期させてレーザ光を
請求項２ないし４いずれか１記載の粒子配列方法に従っ
て前記粘着フィルムの粘着面に照射するレーザ装置とを
備えるようにしたことを特徴とする電極上への粒子配列
装置。7. A film having at least a portion of which is provided with tackiness, a film supply device for continuously supplying the film, a conductive particle supply device for continuously supplying conductive particles on the film, 5. A particle arrangement on an electrode, comprising: a laser device for irradiating a laser beam to an adhesive surface of the adhesive film in accordance with the particle arrangement method according to claim 2 in synchronization with the electrode. apparatus.
おいて、前記レーザ装置に使用されるレーザ光がエキシ
マレーザであることを特徴とする粒子配列装置。8. The particle arrangement device according to claim 6, wherein a laser beam used for said laser device is an excimer laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8242653A JPH1070151A (en) | 1996-08-26 | 1996-08-26 | Method and apparatus for arraying conductive particle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8242653A JPH1070151A (en) | 1996-08-26 | 1996-08-26 | Method and apparatus for arraying conductive particle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1070151A true JPH1070151A (en) | 1998-03-10 |
Family
ID=17092254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8242653A Pending JPH1070151A (en) | 1996-08-26 | 1996-08-26 | Method and apparatus for arraying conductive particle |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1070151A (en) |
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