JPH09129555A - Plasma chemical deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma chemical deposition device which is capable of preventing particles from mixing in a thin film to improve its quality when it is grown at a high speed, wherein the plasma chemical deposition device is used for manufacturing the thin film used for an electronic device such as a thin film semiconductor. SOLUTION: A substrate heater 3 mounted with a substrate 9, a reactive gas introduction tube 6, and a ladder inductance electrode 2 surrounded with a grounded shield 10 connected to an exhaust pipe 7 are arranged in parallel in a reaction chamber 1. The reaction chamber 1 is exhausted through a vacuum pump 8 to be as high in degree of vacuum as prescribed, then SiH4 gas is fed to the reaction chamber 1 through a large number of discharge holes 6b provided to the reactive gas introduction tube 6, and when a high-frequency power is applied to the electrode 2 from a high-frequency power supply 4 through the intermediary of an impedance matching device 5, a glow plasma discharge occurs to decompose SiH4 gas. SiH4 radicals included in decomposed gas are diffused over the substrate 9 to form a thin film on the surface of the substrate 9, and the produced particles grow larger in grain diameter and are discharged out through the exhaust pipe 7 as being carried on a flow of plasma, so that the particles are restrained from reaching to the substrate 9 arranged above a spot where the particles are produced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma chemical vapor deposition apparatus (hereinafter referred to as plasma CVD) applied to the production of thin films used in various electronic devices such as amorphous silicon solar cells, thin film semiconductors, optical sensors, and semiconductor protective films. With equipment).

[0002]

2. Description of the Related Art Amorphous silicon (hereinafter a-Si)
The following describes two typical examples of the configuration of a plasma CVD apparatus that has been conventionally used to manufacture a thin film (hereinafter referred to as “)” or a silicon nitride (hereinafter referred to as SiNx) thin film. That is, a method of using a ladder inductance electrode and a method of using a parallel plate electrode as an electrode used for generating a discharge will be described.

Regarding the method of using a ladder inductance electrode, Japanese Patent Laid-Open No. 4-236781 discloses a plasma CVD apparatus using electrodes of various shapes as a ladder-shaped planar coil electrode. A representative example of this method will be described with reference to FIG. In the figure, the reaction container 21
Inside, a discharge ladder inductance electrode 2 and a substrate heating heater 3 are arranged in parallel. The discharge ladder inductance electrode 2 is supplied with high frequency power of, for example, 13.56 MHz from a high frequency power source 4 via an impedance matching device 5. Ladder inductance electrode for discharge 2
Has one end connected to the high-frequency power source 4 and the other end connected to the ground wire 20 and is grounded together with the reaction vessel 21.

The high frequency power supplied to the discharge ladder inductance electrode 2 generates glow discharge plasma between the discharge ladder inductance electrode 2 and the substrate heating heater 3 which is also grounded to the reaction vessel 21. It flows to the ground through the ground wire 20 of the discharging ladder inductance electrode 2. A coaxial cable is used for the ground wire 20.

A mixed gas of, for example, monosilane and hydrogen is supplied into the reaction vessel 21 from a cylinder (not shown) through a reaction gas introduction pipe 26. The supplied reaction gas is
It is decomposed by glow discharge plasma generated by the discharge ladder inductance electrode 2, held on the substrate heating heater 3, and deposited on the substrate 9 heated to a predetermined temperature. The gas in the reaction vessel 21 is exhausted by the vacuum pump 8 through the exhaust pipe 27.

The production of a thin film using the above apparatus will be described below. First, the vacuum pump 8 is driven to evacuate the inside of the reaction vessel 21, and then, for example, a mixed gas of monosilane and hydrogen is supplied through the reaction gas introduction pipe (26) to set the pressure in the reaction vessel 21 to 0.05. ~ 0.5 Torr
To keep.

In this state, when high frequency power is applied from the high frequency power source 4 to the discharging ladder inductance electrode 2, glow discharge plasma is generated. The reaction gas is decomposed by glow discharge plasma generated between the discharge ladder inductance electrode 2 and the substrate heating heater 3, and as a result, S
Radicals containing Si such as iH ₃ and SiH ₂ are generated,
An a-Si thin film is formed by adhering to the surface of the substrate 9.

Next, a method using the parallel plate electrode will be described with reference to FIG. In the figure, a high frequency electrode 32 and a substrate heating heater 33 are arranged in parallel in a reaction container 31. The high frequency power source 4 is connected to the high frequency electrode 32.
13.56 through the impedance matching unit 5, for example.
High frequency power of MHz is supplied. Substrate heating heater 3
3 is grounded together with the reaction container 31 and serves as a ground electrode. Therefore, glow discharge plasma is generated between the high frequency electrode 32 and the substrate heating heater 33.

A mixed gas of, for example, monosilane and hydrogen is supplied into the reaction vessel 31 from a cylinder (not shown) through a reaction gas introducing pipe 36. The gas in the reaction container 31 is exhausted by the vacuum pump 8 through the exhaust pipe 37. The substrate 39 is held on the substrate heating heater 33 and heated to a predetermined temperature.

Using this apparatus, a thin film is manufactured as follows. The inside of the reaction vessel 31 is evacuated by driving the vacuum pump. When a mixed gas of, for example, monosilane and hydrogen is supplied through the reaction gas introducing pipe 36 to maintain the pressure in the reaction container 31 at 0.05 to 0.5 Torr and a voltage is applied from the high frequency power source 4 to the high frequency electrode 32, glow discharge occurs. Plasma is generated.

Of the gas supplied from the reaction gas introducing pipe 36, monosilane gas is decomposed by glow discharge plasma generated between the high frequency electrode 32 and the substrate heating heater 33. As a result, radicals containing Si such as SiH ₃ and SiH ₂ are generated and adhere to the surface of the substrate 39 to form a-Si.
A thin film is formed.

[0012]

The above-mentioned conventional devices, that is, the method using a ladder inductance electrode and the method using a parallel plate electrode both have the following problems.

(1) In FIG. 8, the ladder inductor is
The reaction gas, for example, S, generated by the electric field generated near the electrode 2
iH_FourIs Si, SiH, SiH_Two, SiH_Three, H, H_Two
And decomposed into an a-Si film on the surface of the substrate 9
You. However, in order to speed up the formation of the a-Si film,
Therefore, increase the output of the high frequency power supply 4 or increase the pressure during film formation.
Is increased to 0.5 Torr to several Torr, plasma
Powder in, that is, Si _TwoH₆And Si_ThreeH₈Such as poly
A large number of mers are generated and mixed with the a-Si film formed on the substrate 9.
Enter. As a result, the a-Si film has a reduced photoconductivity and a pin.
Due to the generation of holes, the quality of
Application of film semiconductors and optical sensors becomes impossible. did
Therefore, it is not possible to improve the deposition rate without degrading the film quality.
It was very difficult.

(2) In FIG. 9, contact with the high frequency electrode 32.
A reaction gas, eg, an electric field generated between the ground electrode 33 and the ground electrode 33
For example SiH_FourIs Si, SiH, SiH_Two, SiH_Three,
H, H _TwoAnd decomposed into an a-Si film on the surface of the substrate 9.
Form. However, speeding up the formation of the a-Si film
In order to increase the output of the high frequency power source 4 or during film formation
If the pressure is raised from 0.5 Torr to several Torr,
Powder in plasma, ie Si_TwoH₆And Si_ThreeH₈Such
A large amount of the above-mentioned polymer is generated, and a-S is formed on the substrate 39.
Mix into the i-film. As a result, the a-Si film has a low photoconductivity.
The quality will be significantly reduced due to the occurrence of pinholes and pinholes.
Application to solar cells, thin film transistors, optical sensors, etc.
Is impossible. Therefore, the film formation speed can be maintained without degrading the film quality.
It was very difficult to improve the degree.

[0015]

The present invention provides the following means in order to solve such a problem.

(1) A reaction container, a reaction gas discharge hole for supplying a reaction gas into the reaction container, a reaction gas discharge hole for discharging the reaction gas, and a discharge ladder inductance electrode arranged in the reaction container. And a power source for supplying glow discharge generating power to the discharge ladder inductance electrode, and a substrate heating heater that is supported in parallel with the discharge ladder inductance electrode at a predetermined interval, and is supplied from the power source. In the plasma chemical vapor deposition apparatus that generates a glow discharge by the generated electric power and forms an amorphous thin film on the surface of the substrate supported on the same heater for heating the substrate, the reaction gas discharge hole has the substrate and the ladder inductance electrode. And the reaction gas discharge hole is arranged so as to sandwich the ladder inductance electrode with the reaction gas discharge hole. To provide a plasma chemical vapor deposition apparatus.

(2) Further, a reaction container, a reaction gas discharge hole for supplying a reaction gas into the reaction container, a reaction gas discharge hole for discharging the reaction gas, and an electric discharge arranged as an anode in the reaction container. A high-frequency flat plate electrode serving as a ground flat plate electrode and a cathode, a power source for supplying glow discharge generating power to the anode and the cathode, and a substrate heating heater inside the anode, and the power supplied from the power source. In a plasma-enhanced chemical vapor deposition apparatus that generates a glow discharge and forms an amorphous thin film on a substrate supported on the surface of the anode, the substrate is divided into a predetermined gap on the surface of the anode, and the substrate reacts in the gap. A plasma chemical vapor deposition apparatus is also provided, wherein the reaction gas discharge hole is provided as a gas passage, and the reaction gas discharge hole is arranged on the cathode surface so as to face the reaction gas discharge hole.

According to the present invention, powder generated during high-speed film formation is prevented from being mixed into the a-Si film by such means, and the flow direction of the reaction gas is made to flow from the substrate surface to generate plasma, that is, the discharge region. The adverse effect of powder is suppressed by allowing the powder to flow.

That is, in the conventional apparatus, since the flow of the reaction gas is directed from the discharge region toward the substrate, the powder having a particle size grown to the wavelength of visible light or more and the particles agglomerated thereof are discharged. Is carried along with the flow of the reaction gas, and is mixed with a thin film on the substrate, for example, an a-Si film.

In the plasma chemical vapor deposition apparatus of the present invention, the powder generated in the discharge region and the particles formed by agglomeration of the powder are discharged from the reaction gas discharge port in both cases (1) and (2) by the above-mentioned means. The reaction gas flows in a direction away from the substrate via the discharge region along with the flow of the reaction gas and is discharged from the reaction gas discharge port, so that the mixing of powder into the thin film on the substrate surface, for example, a-Si film is prevented. .

Since the SiH ₃ radicals forming the a-Si film are electrically neutral and the pressure is about several Torr, the SiH ₃ radicals are diffused from the discharge region having the highest SiH ₃ radical concentration to the substrate surface. To reach. Therefore, it is possible to form a high-quality a-Si film free from the inclusion of powder under the a-Si high-speed film forming conditions under a pressure of 0.5 Torr to several Torr.

[0022]

Embodiments of the present invention will be specifically described below with reference to the drawings. FIG. 1 is a configuration diagram of a plasma enhanced chemical vapor deposition apparatus according to a first embodiment of the present invention. In FIG. 1, reference numeral 1 is a reaction vessel, and a substrate heater 3 that supports a ladder inductance electrode 2 for generating glow discharge plasma and a substrate 9 and controls the temperature of the substrate is attached in the reaction vessel 1. Further, a reaction gas introducing pipe 6 having a reaction gas discharge hole for introducing the reaction gas into the periphery of the ladder inductance electrode 2 is arranged in the container 1.

Reference numeral 4 is a high frequency power source connected to the ladder inductance electrode 2 via an impedance matching device 5, and supplies power of a frequency of 13.56 MHz to the ladder inductance electrode 2, for example.

Reference numeral 10 is an earth shield, which is an unnecessary part.
Of electric discharge for a minute, and the exhaust pipe 7 and vacuum
The above reaction gas is used by combining with the pump 8.
The ladder inductance electrode introduced through the introduction tube 6
SiH plasmatized in 2 _FourGas and dust generated
Is discharged through the exhaust pipe 7.

FIG. 2 is a perspective view of the ladder inductance electrode 2 used in the plasma chemical vapor deposition apparatus shown in FIG. 1. As shown in the drawing, a plurality of conductors are connected to the high frequency power input side and the ground side. There is.

FIG. 3 is a perspective view of a reaction gas introducing pipe 6 used in the plasma enhanced chemical vapor deposition apparatus shown in FIG. 1. It is composed of a plurality of pipes 6a, and each pipe 6a has a large number of reaction gas discharge holes 6b. The ladder inductance electrode 2 shown in FIG. 2 is installed in parallel with the reaction gas introducing pipe b.

A substrate 9 is installed on the substrate heater 3 so that SiH ₃ radicals present in SiH ₄ plasma generated at the ladder inductance electrode 2 are diffused and adsorbed by a diffusion phenomenon as described later. By a-
A Si film is deposited.

Reference numeral 7 denotes an exhaust pipe as described above, which is used in combination with the earth shield 10 and a vacuum pump 8 described later to discharge the reaction gas and powder. Reference numeral 8 denotes a vacuum pump, which discharges a gas such as a reaction gas in the reaction container 1 through the exhaust pipe 7. The pressure in the reaction vessel 1 is monitored by a pressure gauge (not shown) and controlled by adjusting the exhaust amount of the vacuum pump 8.

Next, a method of manufacturing an a-Si film using the apparatus of the first embodiment having the above-mentioned structure will be described below. First, the vacuum pump 8 is operated to evacuate the inside of the reaction vessel 1 to reach an ultimate vacuum of 2 to 3 × 10 ⁻⁷ Torr.

Next, a reaction gas, for example, SiH ₄ gas is supplied from the reaction gas introduction pipe 6 at a flow rate of about 30 to 100 cc / min. The pressure in the reaction vessel 1 is 0.2 to 2.2T.
When high frequency power is supplied from the high frequency power source 4 to the ladder inductance electrode 2 via the impedance matching device 5 while maintaining at orr, glow discharge plasma of SiH ₄ is generated in the vicinity of the ladder inductance electrode 2. This plasma decomposes SiH ₄ gas and a
-Form a Si film.

In the a-Si film formation, polymers such as Si ₂ H ₆ and Si ₃ H ₈ are generated in the SiH ₄ plasma, that is, powder is generated, and the powder has a particle size of visible light wavelength (0. 4 to 0.8 μm), the gas flows in the plasma and is discharged to the exhaust pipe 7. That is, since the substrate 9 is located on the upstream side in the gas flow, the powder cannot reach the substrate 9.

On the other hand, since the SiH ₃ radicals forming the a-Si film have a high concentration near the ladder inductance electrode 2, they diffuse in the direction opposite to the flow due to the diffusion phenomenon. As a result, a high quality a-Si film without powder is formed on the surface of the substrate 9.

FIG. 4 shows the experimental results in the first embodiment of the present invention, where the pressure is 0.2 to 2.2 Torr under the conditions of SiH ₄ gas flow rate of 100 cc / min and output of the high frequency power source 4 of 100 W.
Various characteristics are shown when (a) is a film forming rate, (b) is a refractive index, (c) is photoconductivity, and (d) is pressure dependency of dark conductivity. These are the experimental results. According to these data, even if the pressure is changed and raised to 2.2 Torr, it is judged that none of the data has an effect due to the inclusion of powder. In addition, a when powder is mixed
The refractive index of the -Si film is 3.2 or less, but the data in the experimental result (b) is higher than this.

FIG. 5 is a block diagram of a plasma enhanced chemical vapor deposition apparatus according to the second embodiment of the present invention. In FIG. 5, 11
Is a reaction vessel, and inside the reaction vessel 11 are high-frequency electrodes 12a, 12 for generating glow discharge plasma.
The ground electrode 13 that supports b and the substrates 19a and 19b is arranged. The high frequency electrode 12 and the ground electrode 13
Constitutes a pair of parallel plate type electrodes, and a high frequency power source 4 described later
When more electric power is supplied, glow discharge plasma is generated.

A reaction gas introducing pipe 16 is arranged inside the ground electrode 13, and an exhaust pipe 17 is also arranged inside the high frequency electrode 12.
Is arranged. The exhaust pipe 17 is connected to a vacuum pump 18 to exhaust the gas in the reaction vessel 11.

Reference numeral 4 denotes a high frequency power source, which supplies high frequency power to the high frequency electrode 12 via the impedance matching device 5, for example, 1
Supply 3.56 MHz power. Reference numeral 40 is an earth shield that suppresses unnecessary discharge. Reference numerals 14 and 15 denote first and second electric insulating materials, respectively, which electrically insulate the high frequency electrode 12 and the reaction vessel 11 from each other.

The pressure in the reaction vessel is monitored by a pressure gauge (not shown) and controlled by adjusting the exhaust amount of the vacuum pump 18.

Next, a method of manufacturing an a-Si film using the apparatus of the second embodiment having the above-mentioned structure will be described below.
First, the vacuum pump 18 is operated, the inside of the reaction vessel 11 is evacuated, and the ultimate vacuum is set to 2-3 × 10 ⁻⁷ Torr. A reaction gas, for example, SiH ₄ gas is supplied from the reaction gas introduction pipe 16 at a flow rate of about 30 to 100 cc / min.

The pressure in the reaction vessel 11 is set to 0.2 to 2.2T.
When power is supplied to the high frequency electrode 12 from the high frequency power source 4 via the impedance matching device 5 while maintaining at orr,
A glow discharge plasma of SiH ₄ is generated between the ground electrode 13 and the high frequency electrode 12. This plasma is SiH ₄
The gas is decomposed to form an a-Si film on the surfaces of the substrates 19a and 19b.

In the above a-Si film formation, polymers such as Si ₂ H ₆ and Si ₃ H ₈ are generated in the SiH ₄ plasma, that is, powder is generated. 4 to 0.8 μm), the gas is carried to the exhaust pipe 27 along with the gas flow in the plasma. That is, since the substrates 19a and 19b are located on the upstream side when viewed in terms of the gas flow, the powder is generated on the substrates 19a and 19b.
I can't reach 19b.

On the other hand, since the SiH ₃ radicals forming the a-Si film have a high concentration between the electrodes 12 and 13, they also diffuse in the direction opposite to the flow due to the diffusion phenomenon. As a result, a high quality a-Si film without powder is formed on the surfaces of the substrates 19a and 19b.

The experimental result of the second embodiment is almost the same as that of the first embodiment shown in FIG. 4 described above, but the film forming rate is slightly lower than the data of the first embodiment, and the maximum is 5.
It was Å / S.

FIG. 6 is a view on arrow AA in FIG.
(A) shows an example in which the reaction gas introducing pipe 16 opened between the substrates 19a and 19b has a slit shape, (b) shows a large number of tubular introducing pipes 16a, (c) shows the substrate 19a, 1
9b, 19c, and 19d are arranged, and a large number of reaction gas introducing pipes 16b are opened between them.

FIG. 7 is a view taken along the line BB in FIG.
(A) shows a state in which the exhaust pipe 17 is opened in a slit shape between the two high-frequency electrodes 12a, 12b, and (b) shows four high-frequency electrodes 12c, 12d, 12e, 12f between them. The exhaust pipe 17a is shown in FIG.

According to the first and second embodiments described above, in the plasma chemical vapor deposition apparatus, the a-Si powder generated when the a-Si thin film is formed on the substrate 9 or 19 at a high speed.
By preventing the reaction gas from mixing in the film and setting the direction of the flow of the reaction gas toward the plasma, that is, the discharge region, from the surface of the substrate, the harmful effects of the powder are suppressed. That is, in the conventional apparatus, since the flow of the reaction gas is directed from the discharge region toward the substrate, the powder having the powder diameter grown to the wavelength of visible light or more and the particles aggregated from the reaction gas are discharged. A) on the board.
It is mixed in the Si film.

On the other hand, in the first and second embodiments of the present invention, the powder generated in the discharge region and the particles in which the powder is aggregated are mixed in the flow of the reaction gas introduced from the reaction gas introduction pipe 6 or 16. Since it is discharged from the substrate 9 or 19 via the discharge region in a direction away from the substrate 9 or 19, powder is prevented from being mixed into the a-Si film on the surface of the substrate 9 or 19 during film formation.

Since the SiH ₃ radicals forming the a-Si film are electrically neutral and the pressure is about several Torr, the diffusion phenomenon from the discharge region having the highest SiH ₃ radical concentration causes the substrate 9 or Reach the surface of 19. Therefore, it is possible to form a high-quality a-Si film free from the inclusion of powder under the a-Si high-speed film forming conditions under a pressure of 0.5 Torr to several Torr.

[0048]

As described above in detail, the plasma chemical vapor deposition apparatus of the present invention is designed so that the reaction gas is supplied to the reaction vessel through the reaction gas discharge hole and the reaction is performed outside the reaction vessel through the reaction gas discharge hole. Since it has been realized that the substrate is installed on the upstream side of the gas flow of the gas discharge and the discharge area of the reaction gas is arranged on the downstream side, the powder generated and growing in the plasma causes the a-Si film on the substrate to grow. No longer mixed in.

As a result, a-Si, which has been regarded as difficult in the past,
It became possible to prevent deterioration of the film quality due to the inclusion of powder in the a-Si film during high-speed film formation. Therefore, a-Si solar cell, T
The industrial value in the manufacturing field of FT liquid crystal displays and a-Si photoconductors has expanded remarkably.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a plasma enhanced chemical vapor deposition apparatus according to a first embodiment of the present invention.

FIG. 2 is a perspective view of a ladder inductance electrode of the plasma enhanced chemical vapor deposition apparatus according to the first embodiment of the present invention.

FIG. 3 is a perspective view of a reaction gas introduction pipe of the plasma enhanced chemical vapor deposition apparatus according to the first embodiment of the present invention.

FIG. 4 is a characteristic diagram obtained by the plasma chemical vapor deposition apparatus according to the first embodiment of the present invention, in which (a) is a film forming rate and (b) is a film forming rate.
Is the refractive index, (c) is the photoconductivity, and (d) is the dark conductivity.

FIG. 5 is a configuration diagram of a plasma enhanced chemical vapor deposition apparatus according to a second embodiment of the present invention.

6 is a view taken along the line AA in FIG. 5, (a) shows the arrangement of two substrates and a slit-shaped reaction gas introduction pipe, and (b) shows two substrates and a large number of tubular reaction gases. Placement such as introduction,
(C) shows a state in which four substrates are provided and a tubular reaction gas introduction pipe is arranged between them.

FIG. 7 is a view taken along the line BB in FIG. 5, where (a) shows the arrangement of two high-frequency electrodes and an exhaust pipe, and (b) shows the arrangement of four high-frequency electrodes and an exhaust pipe.

FIG. 8 is a configuration diagram of a conventional plasma chemical vapor deposition apparatus using a ladder inductance electrode.

FIG. 9 is a configuration diagram of a conventional plasma chemical vapor deposition apparatus using parallel plate electrodes.

[Explanation of symbols]

1,11 Reaction container 2 Ladder inductance electrode 3 Substrate heating heater 4 High frequency power source 5 Impedance matching device 6,16 Reactant gas introduction pipe 7,17 Exhaust pipe 8,18 Vacuum pump 9,19 Substrate 12a, 12b, 12c, 12d High frequency Electrode (cathode) 13 Ground electrode (anode)

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical display location H01L 21/285 H01L 21/285 C

Claims (2)

[Claims] 1. A reaction container, a reaction gas discharge hole for supplying a reaction gas into the reaction container, a reaction gas discharge hole for discharging the reaction gas, and a discharge ladder inductance electrode arranged in the reaction container. A power source for supplying glow discharge generation power to the discharge ladder inductance electrode and a substrate heating heater supported in parallel with the discharge ladder inductance electrode at a predetermined interval, and supplied from the power source. In a plasma chemical vapor deposition apparatus that generates a glow discharge by electric power and forms an amorphous thin film on the surface of a substrate supported on the same heater for heating the substrate, the reaction gas discharge hole is formed between the substrate and the ladder inductance electrode. And a reaction gas discharge hole disposed between the reaction gas discharge hole and the reaction gas discharge hole so as to sandwich the ladder inductance electrode. Zuma chemical vapor deposition equipment. 2. A reaction container, a reaction gas discharge hole for supplying a reaction gas into the reaction container, a reaction gas discharge hole for discharging the reaction gas, and a ground for discharge arranged as an anode in the reaction container. A high-frequency flat plate electrode serving as a flat plate electrode and a cathode,
A substrate having a power source for supplying glow discharge generating power to the anode and the cathode and a substrate heating heater inside the anode, generating glow discharge by the power supplied from the power source, and supported on the surface of the anode. In a plasma enhanced chemical vapor deposition apparatus for forming an amorphous thin film on the substrate, the substrate is divided into a predetermined gap on the surface of the anode, and the reaction gas discharge holes are provided in the gap as reaction gas passages. The plasma chemical vapor deposition device according to claim 1, wherein the reaction gas discharge hole is disposed on the cathode surface so as to face the reaction gas discharge hole.