JPH02205850A - Positive type photoresist composition - Google Patents

Abstract

PURPOSE:To improve sensitivity, resolution, heat resistance and process stability by mixing compds. having monohydroxy groups or dihydrox groups with the carrier of 1, 2-quinonediazide compds. to be incorporated into the compsn. CONSTITUTION:This compsn. contains the alkaline soluble novolak resin obtd. by polycondensation of phenols and aldehyde and the 1, 2-quinonediazide compds. The 1, 2-quinonediazide compds. consist of at least one kind of the 1, 2- quinonediazide compds. having a small coefft. of thermal diffusion and at least one kind of the 1, 2-quinonediazide compds. having a large coefft. of thermal diffusion. The positive type photoresist compsn. consisting of the 1, 2- quinonediazide compds. and the alkaline soluble novolak resin is capable of greatly improving resolution and pattern shapes by using the mixture composed of the photosensitive agents which are different in the coefft. of thermal diffusion. This compsn. is suitable for production of semiconductor integrated circuit elements, such as VLSIs.

Description

Detailed Description of the Invention [Industrial Field of Application] The present invention provides an alkali-soluble novolak resin and a 1°2- The present invention relates to a positive photosensitive resin composition comprising a quinonediazide compound.

[Prior Art] In recent years, the density and integration of semiconductor integrated circuits have progressed, and as we enter the era of 4 Mbits or more of integration, pattern formation of submicron rules and even smaller ones has become necessary.

The positive photoresist consists of an alkali-soluble novolak resin and a 1°2-quinonediazide compound that functions as an alkali dissolution inhibitor.

In the radiation irradiated area, the 1,2-quinonediazide compound becomes ketene via carbene, reacts with moisture inside and outside the system to produce indenecarboxylic acid, and is dissolved in the aqueous alkaline solution in the container. On the other hand, the unirradiated area is dissolved in an alkaline developer, hardly swells, and maintains a high residual film ratio. As a result, a high resolution resist pattern is obtained.

Conventional cyclized polyisoprene-based negative photoresists have limited resolution due to swelling of the film during development.
Nowadays, positive photoresists are mainly used. By the way, in order to meet increasingly stringent requirements, various improvements are being attempted in positive photoresists, and a wide range of detailed studies are being conducted on everything from resins, photosensitizers, developers, and additives. . In particular, resists with high sensitivity, high resolution, rectangular pattern profile, high dry etching resistance, high heat resistance, and process stability are strongly desired and are the goal of improvement.

[Problem to be solved by the invention] However, sensitivity and resolution, sensitivity and heat resistance, and sensitivity,
Resolution, heat resistance and process stability tend to contradict each other. For example, increasing the molecular weight of the resin increases heat resistance, but reduces sensitivity, resolution, pattern profile rectangularity, and process stability. Co-m to improve heat resistance
If this is done, the rectangularity of the ζ pattern profile and the process stability will deteriorate. Furthermore, when the amount of photosensitizer is increased, the resolution improves, but the sensitivity decreases. As described above, since there are many contradictory properties, it is extremely difficult to achieve high performance without degrading other properties.

Therefore, in order to improve the resolution without deteriorating various physical properties, improvements have been recently made in the lithography process.

For example, various methods have been proposed, including a method using surface hardening, a method using deep ultraviolet light irradiation, and a method using thermal diffusion. Among these, a method using post-exposure thermal diffusion (hereinafter referred to as FEB), which is relatively simple and highly effective, is attracting attention.

The PEB method aims to achieve high resolution by using heat diffusion to homogenize the grain distribution of the photosensitizer before and after the chemical change that occurs in the exposed area by heating after exposure. This is a method that However, even with this method, it has not been possible to improve the trapezoidal pattern that occurs near the limit resolution of the lens into rectangularity. In addition, users can use lenses with a NA of 0.45 to
We want a resist with μm resolution.

[Means for Solving the Problem] As a result of extensive research based on the above background, the present inventors have found that this positive solution can be achieved by using at least two types of photosensitizers with different thermal diffusion coefficients. The present inventors have discovered that the above-mentioned problems can be solved by mixing a compound having a monohydroxy group or a dihydroxy group with a carrier of a 1°2-quinonediazide compound contained in a type photoresist composition, and have thus arrived at the present invention.

That is, the present invention provides a positive photosensitive resin composition comprising an alkali-soluble novolak resin obtained by polycondensing phenols and aldehydes in the presence of an acid catalyst or an alkali catalyst and a 1,2-quinonediazide compound, A positive photoresist, characterized in that the 1,2-quinonediazide compound is composed of at least one 1,2-quinonediazide compound with a small thermal diffusivity and at least one 1,2-quinonediazide compound with a large thermal diffusivity;
The present invention provides a composition.

As a 1.2-quinonediazide compound with a small thermal diffusion coefficient, general formula (A), (wherein R3 and R2 may be different from each other, C0 to C
4 alkyl group or alkenyl group or alkoxyl group, aralkyl group%C2-C5 alkanoyl u1
or an alkanoyloxy group, a halogen atom, a nitro group or a phenyl group, Dl and D2 may be different from each other, hydrogen atoms, 1,2-naphthoquinonediazide-5
-sulfonyl group, 1,2-naphthoquinonediazide-4
-Sulfonyl group or 1,2-benzoquinonediazide-
Represents a 4-sulfonyl group, X is>C-0, -s->s-o,)S-02,>C
(CH3)2 , )CH2, -NH(C-0)- or -NCH3(C-0),
a, C2, b, and C are each a number greater than or equal to 0, and represent an integer such that the sum of al and C2 is greater than or equal to 3 and less than or equal to 6, and the sum of a, a, b, and C is less than or equal to 10). Examples of such compounds include:

As a 1.2-quinonediazide compound having a large thermal diffusion coefficient, general formula (B), (wherein R3 and R4 may be different from each other, C2 to C
4 alkyl group or alkenyl group or alkoxyl group, aralkyl group, C2 to C6 alkanoyl group,
or represents an alkanoyloxy group, a halogen atom, a nitro group or a phenyl group, D3 and D4 are hydrogen atoms which may be different from each other, 1,2-naphthoquinonediazide-5
-sulfonyl group, 1,2-naphthoquinonediazide-4
-Sulfonyl group or 1,2-benzoquinonediazide-
4-sulfonyl group, X is 〉c-o, -s-)s-o,)s-02,>C(C
H3)2, 〉CH2, -NH(C-0)- or -NCH, (C-0),
C3, 4, d and e are each a number of 0 or more, and a
, and represents an integer in which the sum of C4 is 1 or 2, and the sum of C9, C4, d and e is 10 or less) and the compound represented by the general formula (C), (Y)f (wherein, Y is represents a C, -C, alkyl group, alkenyl group, or alkoxyl group, or a C2 to C5 alkanoyl group, or an alkanoyloxy group, D,
is a hydrogen atom, a 1,2-naphthoquinonediazide-5-sulfonyl group, a 1,2-naph]quinonediazide-4-sulfonyl group, or a 1,2-benzoquinonediazide-4-
sulfonyl μ, a is 1 or 2, f is a number of 0 or more and the sum of a and a is an integer of 6 or less) can be exemplified.

When any of the substituents in these compounds is a hydrogen atom, the ratio of the number of hydrogen atoms (k·I) to the total number of substituents is preferably 10% or less.

Although the substituents in each of the above general formulas are not necessarily limited, examples of C3 to C4 alkyl groups and alkenyl groups include methyl group, ethyl group, n- and i-propyl group, Q-8ec- and tert-butyl group. group, vinyl group,
Examples include propenyl group and butenyl group. Similarly, alkoxyl groups include methoxyl group, ethoxyl group, n-
and i-propoxyl group, jl-8ec- and tert
-butoxyl group, bentoxyl group, etc.

Aralkyl groups include benzyl group, phenylethyl group,
Examples include phenylpropyl group and cumyl group.

Examples of the C2-C1 alkanoyl group include acetyl group, propionyl group, n- and i-butynyl group, Q-8ec- and tert-valeryl group. Similarly, alkanoyloxy groups include acetyloxy group, propionyloxy group, n- and i-butynyloxy2iU%n-
Examples include 5ec- and tert-valeryloxy groups.

Examples of halogen atoms include F, CJ7. Examples include Br, 1, etc.

The quinonediazide compound, which is a component of the positive photoresist composition of the present invention, can be synthesized by a conventional method, for example, the following method.

It can be synthesized by dissolving a compound having a mono- or dihydroxy group and quinonediazide sulfonyl chloride in a solvent, and adding an alkali catalyst at room temperature. The esterification rate at this time is not particularly limited, but
Preferably it is 90% or more.

Further, the novolak resin, which is another component of the positive photoresist composition of the present invention, is also not limited. For example, as monomers, phenol, O-cresol, m-cresol, p-cresol, 0-ethylphenol, m-ethylphenol, p-ethylphenol, 0-n-butylphenol, rn-n-butylphenol, p-n
-butylphenol, 0-t-butylphenol, m-
t-butylphenol, pt-butylphenol, 0
-methoxyphenol, m-methoxyphenol, p
-methoxyphenol, 0-fluorophenol, m-
Fluorophenol, p-fluorophenol, O-chlorophenol, m-chlorophenol, p-chlorophenol, 0-nitrophenol, m-ditrophenol, p-nitrophenol, 2,4-xylenol, 2
゜5-xylenol, 3.4-xylenol, 3゜5-
Xylenol, bisphenol A1 bisfuninol S rsorcinol, etc. can be used.

The method of synthesizing the novolak resin is not limited either, and can be synthesized by a conventional method, for example, the following method.

The above-mentioned monomers and/or dihydroxy compounds are dissolved in a high-boiling solvent, followed by addition of the required amount of catalyst and rapid heating. Then, aldehyde is added dropwise to produce a resin. The aldehyde used here is not particularly limited, and examples thereof include formaldehyde, paraformaldehyde, acetaldehyde, phenylaldehyde, and the like.

Similarly, the catalyst is not particularly limited, but examples thereof include formic acid, oxalic acid, acetic acid, hydrochloric acid, sulfuric acid, nitric acid, and Lewis acid. Further, if necessary, some of the hydroxyl groups in the resin may be esterified with a sulfonyl group or a carbonyl group.

Examples of the esterification component include alkyl groups such as methyl, ethyl, and propyl, and aromatic rings such as phenyl, tolyl, benzoic acid, naphthyl, benzyl, cumyl, and phenethyl. The esterification reaction is obtained by reacting the above resin with sulfonyl halide or carbonyl halide in the presence of a basic catalyst. The molecular weight of the novolac resin that can be used as a resist is not particularly limited, but is preferably about 2,000 to 30,000.

The positive photosensitive resin composition of the present invention is obtained by dissolving the alkali-soluble novolac resin and the 1,2-quinonediazide compound of the present invention in a suitable solvent such that the solid content is 20 to 40 parts by weight. It will be done.

Examples of the solvent include ethylene glycol monoalkyl ether and its acetates, propylene glycol monoalkyl ether and its acetates, diethylene glycol dialkyl ethers, ketones such as methyl ethyl ketone and cyclohexanone, acetic acid esters such as ethyl acetate and butyl acetate, Examples include aromatic hydrocarbons such as toluene and xylene, dimethylacetamide, and dimethylformamide. These solvents can be used alone or in combination of two or more.

Furthermore, if necessary, a nonionic, fluorine-based, silicone-based surfactant, etc. can be added to improve coating properties. In addition, if necessary, sensitizers, colorants,
Compatible additives such as stabilizers can be blended.

[Function] The positive photoresist composition comprising the 1,2-quinonediazide compound and the alkali-soluble novolac resin of the present invention can be used for resist pattern formation using ultraviolet rays, deep ultraviolet rays, electron beams, X-rays, etc. Excellent sensitivity, resolution, heat resistance, and process stability.

There are no particular limitations on how to use the positive photoresist composition comprising the 1,2-quinonediazide compound and alkali-soluble novolac resin of the present invention to form a resist pattern by radiation, and the method can be carried out according to a conventional method. can.

For example, the positive photoresist composition of the present invention is prepared by dissolving an alkali-soluble novolak resin, a 1,2-quinonediazide compound, and additives in a solvent, and filtering the solution through a 0.2 μm filter. A resist film is obtained by spin-coding a resist solution onto a substrate such as a silicon wafer and bre-baking. After that, exposure is performed using a reduction projection exposure device, an electron beam exposure device, etc., and then the temperature a' (preferably 1
A resist pattern can be formed by baking at a temperature of 0° C. to 30° C. higher and then developing. As a developer, for example, an organic alkali aqueous solution such as a quaternary ammonium salt such as tetramethylammonium hydroxide, choline, amines, or an inorganic alkali aqueous solution such as sodium hydroxide, potassium hydroxide, sodium carbonate, or aqueous ammonia is used. Can be used. coating, pre-beta,
Other methods such as exposure and development can be carried out according to conventional methods.

[Examples] The present invention will be explained in more detail with reference to Examples below, but the present invention is not limited thereto.

Synthesis Example 1 In a 500 mi 3-tube flask, 0.1 On+of of 2,4-dihydroxybenzophenone was added to 35 mg of dioxane.
After dissolving in 0-, add 0.205a+ol of 1,2-naphthoquinonediazide-5-sulfonyl chloride and while stirring in a room, add 0.22sol of triethylamine.
85- of dioxane solution was added dropwise over about 30 minutes. Thereafter, the reaction was continued for 4 hours. After the reaction, triethylamine hydrochloride was filtered off, and the filtrate was poured into a large amount of ion-exchanged water to precipitate a 1°2-quinonediazide compound. This was filtered, washed successively with ion-exchanged water and ethanol, and then dried to obtain a powder. When analyzed by GPC, a peak derived from the diester was detected, but no peak from the raw material could be detected.

Synthesis Example 2 Commercially available 3,5-dihydroxybenzoic acid methyl ester was placed in a 500-meter 3-tube flask. 1 mol and 1
,2-nuff!・Quinonediazide-5-sulfonyl chloride 0. 2051! lof dioxane 350
While stirring at room temperature, 85 ml of a solution of 0.22 sol of triethylamine in dioxane was added to 3 ml of dioxane solution.
It was dropped in 0 minutes. Thereafter, the reaction was continued for 2.5 hours.

After the reaction, triethylamine hydrochloride was filtered off, and the filtrate was poured into a large amount of ion-exchanged water to precipitate a 1,2-quinonediazide compound.

After filtering this, it was washed successively with ion-exchanged water and ethanol, and dried to obtain a powder.

Elemental analysis values are C53.4%, H2.5%, N9.0%,
It was 89.6%.

Synthesis Example 3 0.1 mol of phenol in a 300 ml 3 flask
and 1,2-naphthoquinonediazide-5-sulfonyl chloride 0. 105 mol to 180 mol of dioxane
A solution of 0.12*ol of triethylamine in dioxane (45-) was added dropwise over 30 minutes while stirring at room temperature. Thereafter, the reaction was continued for 2.5 hours. After the reaction, triethylamine hydrochloride was filtered off, and solution a was poured into a large amount of ion-exchanged water to precipitate a 1,2-quinonediazide compound.

After filtering this, it was washed successively with ion-exchanged water and ethanol, and dried to obtain a powder.

Elemental analysis values are C59.5%, H3.2%, N9.2%,
It was 89.0%.

Synthesis Example 4 0.07*ol of commercially available 2.3°4-trihydroxybenzophenone and 1,2-
Naphthoquinonediazide-5-sulfonyl chloride 0
．． 215 of dioxane was dissolved in 370 mM of dioxane, and while stirring at room temperature, 0.2 B of triethylamine was added.
85 ml of a dioxane solution of @ol was added dropwise over 30 minutes. After that, the reaction was carried out for 2.5 hours. continued. After the reaction,
Triethylamine hydrochloride was filtered off, and the filtrate was poured into a large amount of ion-exchanged water to precipitate a 1,2-quinonediazide compound.

After filtering this, it was washed successively with ion-exchanged water and ethanol, and dried to obtain a powder.

Elemental analysis values are C56.1%, H2.3%, N8.8%,
It was 810.0%.

Synthesis Example 5 A commercially available 2.3°4.4
'-Tetrahydroxybenzophenone 0, 05 mo
l and 1,2-naphthoquinonediazide-5-sulfonyl chloride 0. 205 mol of dioxane 3
70mm! While stirring at room temperature, add 0.0% triethylamine. 22 mol dioxane solution 85
- was added dropwise over 30 minutes. Thereafter, the reaction was continued for 2.5 hours. After the reaction, triethylamine hydrochloride was filtered off, and the filtrate was poured into a large amount of ion-exchanged water to precipitate a 1,2-quinonediazide compound. After filtering this, it was washed successively with ion-exchanged water and ethanol, and dried to obtain a powder.

Elemental analysis values are C54.3%, H2.2%, N9.4%,
S was 10°6%.

Synthesis Example 6 1.0g of O-cresol in a 300d 4 flask
Sm-cresol 45gr, p-cresol 55gr
, adding 1.7 gr of oxalic acid dihydrate under a nitrogen atmosphere,
It was immersed in an oil bath without stirring.

When the internal temperature reached nearly 100°C, 68g of a 35% formalin aqueous solution was added dropwise (about 90 minutes), and polymerization was carried out over about 2 hours. The obtained resin was dissolved in dioxane to a concentration of 15! Drop the r1% solution into a large amount of water,
The resin was precipitated. By repeating this operation several times and drying after completely removing the catalyst, the resin powder 102
I got gr.

The strain average molecular weight of novolac resin is G P C1ll
The result was approximately 5050 in terms of polystyrene.

Further, the degree of dispersion (weight average molecular fil/number average molecular weight) was 4.12.

Example 1 5.1 gr of the resin obtained in Synthesis Example 6 and 0.1 gr of 1,2-quinonediazide obtained in Synthesis Example 1. 1 gr and 0.85 gr of 1,2-quinonediazide obtained in Synthesis Example 4 were mixed with 16 g of ethylene glycol monoethyl ether acetate.
The resist solution was prepared by dissolving it in a 4-inch wafer using a spinner, and filtering it through a 0.2 μm microfilter to obtain a resist solution.
, pre-baked in a circulating constant temperature bath for 30 minutes to 1.5 μm.
A thick resist film was obtained. Next, exposure was performed through the reticle using a 5:1g line reduction projection exposure device (N, A, -0,45). Next, heat at 110℃ under a hot plate at 9
Heated for 0 seconds. As a developer, tetramethylammonium hydroxide 2.38! Immersion development was performed at 25° C. for 1 minute using a fim% aqueous solution. The exposure amount to develop 1.0 μm line/space one to one is 195 mJ
/cm2, one-to-one development was possible up to 0.50 μm line/space with the same exposure dose, and the mask fidelity was also good. The resolution could be resolved down to 0.50 μm under the same exposure amount, and the pattern was rectangular.

Next, one 3 μm line/space pattern was created.
40.145.150.155.160.165.17
The heat resistance was evaluated by performing beta in a circulating constant temperature bath for 30 minutes at each temperature of 0°C. As a result, no pattern deformation was observed up to 140°C.

Example 2 Resin obtained in Synthesis Example 6 5. 1 gr, 0.09 gr of 1,2-quinonediazide obtained in Synthesis Example 2, and 0.81 gr of 1,2-quinonediazide obtained in Synthesis Row 5.
Ethylene glycol monoethyl ether acetate 1
It was dissolved in 6gr and filtered through a 0.2 μm microfilter to obtain a resist solution. Using this resist solution, an experiment of Example 1 and 8th test was conducted.

The exposure dose to develop 1.0 μm lines/spaces one-to-one is 217 mJ/cm2, and with the same exposure dose, it is possible to develop one-to-one lines/spaces up to 0.50 μm, and the mask fidelity is good with a rectangular pattern. there were. Further, although it was possible to resolve down to 0.45 μm under the same exposure amount, the shape was trapezoidal.

Example 3 Resin of Synthesis Example 65. 1 gr and synthesis example 3 and synthesis example 5
of photosensitizer, respectively. 05 gr, 0.85 gr
Resist adjustment and evaluation 611i were performed in exactly the same manner as in Example 2, except that . The exposure amount to develop a 1.0 μm line/space one to one is 229 mJ/cm2,
1:1 up to 0.50μm line/space with the same exposure amount
It could be developed easily and the mask fidelity was also good. Solution] The resolution could be resolved down to 0.50 μm under the same exposure amount, and the pattern was rectangular.

Example 4 In Example 1, g L'A reduction projection exposure apparatus (N, A.

-0,45) instead of the i-line reduction projection exposure device (N, A
, -0, 42) was used, but the resist was evaluated in exactly the same manner.

The exposure amount to develop a 1.0 μm line/space 1:1 is 178 mJ/cm', and the same exposure amount is 0.50 μmn.
One-to-one development was possible up to lines and spaces, and the mask fidelity was good with a rectangular pattern. Although the resolution could be resolved down to 0.45 μm under the same exposure amount, the 0.45 μm pattern was slightly trapezoidal.

Comparative Example 1 Resin obtained in Synthesis Example 6 5. 1 gr and 0.95 gr of 1,2-quinonediazide obtained in Synthesis Example 5 were mixed with 16 gr of ethylene glycol monoethyl ether acetate.
The resist solution was dissolved in water and filtered through a 0.2 μm microfilter to obtain a resist solution.

This resist solution was applied onto a 4-inch wafer using a spinner, and prebaked at 90° C. for 30 minutes in a circulating constant temperature bath to obtain a resist film with a thickness of 1.5 μm. Next 5
Exposure was performed through the reticle using a paired 1g line reduction projection exposure device (N, A, -0,45). Subsequently, it was heated at 110° C. for 90 seconds on a hot plate. As a developer,
Immersion development was performed at 25° C. for 1 minute using a 2.38 weight 96 aqueous solution of tetramethylammonium hydroxide.

The exposure amount to develop a 1.0 μm line/space one to one is 215 mJ/cm2, and the same exposure amount is 0
．． One-to-one development was possible up to 65 μm line/space, and the mask fidelity was also good. 0.60μ under the same exposure amount
It was only possible to resolve up to m. Moreover, the pattern was slightly trapezoidal.

[Effects of the Invention] The positive photoresist composition comprising the 1,2-quinonediazide compound and the alkali-soluble novolac resin of the present invention has significantly improved resolution and pattern shape by using a mixture of photosensitizers with different thermal diffusion coefficients. Therefore, it is suitable for manufacturing semiconductor integrated circuit elements such as VLSI.

Claims (2)

[Claims] (1) A positive photosensitive resin composition comprising an alkali-soluble novolac resin obtained by polycondensing phenols and aldehydes in the presence of an acid catalyst or an alkali catalyst and a 1,2-quinonediazide compound. ,2-
A positive photoresist composition characterized in that the quinonediazide compound comprises at least one 1,2-quinonediazide compound with a small thermal diffusion coefficient and at least one 1,2-quinonediazide compound with a large thermal diffusion coefficient. (2) A 1,2-quinonediazide compound with a small thermal diffusion coefficient has the general formula (A), ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (In the formula, R_1 and R_2 may be different from each other.
1 to C_4 alkyl group or alkenyl group or alkoxyl group, aralkyl group, C_2 to C_5 alkanoyl group or alkanoyloxy group, halogen atom, nitro group or phenyl group, D_1 and D_2
represents a hydrogen atom, a 1,2-naphthoquinonediazide-5-sulfonyl group, a 1,2-naphthoquinonediazide-4-sulfonyl group, or a 1,2-benzoquinonediazide-4-sulfonyl group, which may be different from each other, and X is ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, -S-, ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, ▲ Mathematical formulas ,Chemical formula,
There are tables, etc.▼, which indicates -NH(C=O)- or -NCH_3(C=O)-, where a_1, a_2, b and c are each a number greater than or equal to 0, and the sum of a_1 and a_2 is 3. more than or equal to 6, a_1,
(Represents an integer where the sum of a_2, b and c is 10 or less)
It is a compound represented by 1,2- with a large thermal diffusion coefficient.
The quinonediazide compound has the general formula (B), ▲Mathematical formula, chemical formula, table, etc.▼(B) (In the formula, R_3 and R_4 may be different from each other)
1 to C_4 alkyl group or alkenyl group or alkoxyl group, aralkyl group, C_2 to C_5 alkanoyl group or alkanoyloxy group, halogen atom, nitro group or phenyl group, D_3 and D_
4 represents a hydrogen atom, a 1,2-naphthoquinonediazide-5-sulfonyl group, a 1,2-naphthoquinonediazide-4-sulfonyl group, or a 1,2-benzoquinonediazide-4-sulfonyl group, which may be different from each other; ▲There are mathematical formulas, chemical formulas, tables, etc.▼, -S-, ▲There are mathematical formulas, chemical formulas, tables, etc.▼,▲There are mathematical formulas, chemical formulas, tables, etc.▼, ▲There are mathematical formulas, chemical formulas, tables, etc.▼,▲ mathematical formulas, chemical formulas,
There are tables, etc.▼, which indicates -NH(C=O)- or -NCH_3(C=O)-, where a_3, a_4, d and e are each a number greater than or equal to 0, and the sum of a_3 and a_4 is 1. or 2, a_3, a_
4, represents an integer for which the sum of d and e is 10 or less) and/or general formula (C), ▲ mathematical formula, chemical formula, table, etc. ▼ (C) (in the formula, Y is C_1 ~C_4 alkyl group, alkenyl group, or alkoxyl group, or C_2 to C_5
represents an alkanoyl group or an alkanoyloxy group, and D_5 is a hydrogen atom, a 1,2-naphthoquinonediazide-5-sulfonyl group, a 1,2-naphthoquinonediazide-4-sulfonyl group, or a 1,2-benzoquinonediazide-4-sulfonyl group. group, a_5 is 1 or 2, f
2. The positive photoresist composition according to claim 1, wherein the positive photoresist composition is a compound represented by the formula (represents an integer greater than or equal to 0 and whose sum with a_5 is less than or equal to 6). (2) A method for forming a resist pattern, comprising using the positive photoresist composition according to claim 1 or 2.